KR100510067B1 - Self align contact etching method for forming semiconductor device - Google Patents
Self align contact etching method for forming semiconductor device Download PDFInfo
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- KR100510067B1 KR100510067B1 KR10-1999-0065888A KR19990065888A KR100510067B1 KR 100510067 B1 KR100510067 B1 KR 100510067B1 KR 19990065888 A KR19990065888 A KR 19990065888A KR 100510067 B1 KR100510067 B1 KR 100510067B1
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- 238000005530 etching Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 54
- 229920000642 polymer Polymers 0.000 claims abstract description 51
- 239000011229 interlayer Substances 0.000 claims abstract description 33
- 230000000694 effects Effects 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000005596 ionic collisions Effects 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000002265 prevention Effects 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- Condensed Matter Physics & Semiconductors (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
본 발명은 고집적 반도체 소자의 자기정렬콘택 형성을 위한 층간절연막 식각 과정에서 과도한 폴리머의 형성으로 식각방지막이 손상되거나 식각정지 현상이 발생하는 것을 효과적으로 억제할 수 있는 자기정렬콘택 식각 방법에 관한 것으로, 워드라인 사이에 고르게 폴리머를 형성하기 위해서 종래 2단계 식각 공정을 대신하여 3 단계 식각 공정을 실시한다. 즉, 폴리머가 적게 생기는 제1 조건으로 워드라인 상부면을 덮는 식각방지막이 드러나는 시점까지 층간절연막을 식각하고, 워드라인 상부면을 덮는 식각방지막이 드러나는 시점부터 소정량의 폴리머가 발생될 때까지 상기 제1 조건 보다 폴리머가 많이 발생하는 조건으로 층간절연막을 식각하여 이미 노출되어 있는 식각방지막을 보호하고, 반도체 기판 상의 식각방지막이 노출될 때까지 제2 조건 보다 폴리머 발생이 적고 이온충돌 효과가 많이 발생하는 제3 조건으로 층간절연막을 식각한다.The present invention relates to a self-aligned contact etching method that can effectively inhibit the etching prevention film damage or the etch stop phenomenon due to the formation of excess polymer in the interlayer insulating film etching process for forming a self-aligned contact of the highly integrated semiconductor device, In order to form a polymer evenly between the lines, a three-step etching process is performed instead of the conventional two-step etching process. That is, the interlayer insulating layer is etched until the etch stop layer covering the word line upper surface is exposed under the first condition that the polymer is less produced, and the etch stop layer covering the word line upper surface is exposed until the predetermined amount of polymer is generated. The interlayer insulating film is etched in a condition in which more polymers are generated than the first condition to protect the already exposed etch stop layer, and less polymer is generated and more ion collision effects occur than the second condition until the etch stop layer on the semiconductor substrate is exposed. The interlayer insulating film is etched under the third condition.
Description
본 발명은 반도체 소자 제조 방법에 관한 것으로, 특히 반도체 소자의 자기정렬콘택 형성 방법에 관한 것이다.The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for forming a self-aligned contact of a semiconductor device.
반도체 소자의 집적도가 높아짐에 따라 마스크 공정의 정렬(align) 오차 문제를 완화시킬 수 있는 자기정렬식각 공정이 널리 쓰이고 있다. 자기정렬식각 공정에서 가장 문제가 되는 점은 콘택 형성을 위한 식각 도중에 식각방지막이 손실되어 워드라인이 드러나면서 이후로 형성되는 폴리실리콘 플러그와 워드라인이 연결되어 소자의 오작동이 발생하는 문제와 식각이 원하는 깊이까지 진행되지 못하고 콘택의 중간에서 식각이 멈추는 현상이 발생한다는 점이다.As the degree of integration of semiconductor devices increases, self-aligned etching processes that can alleviate the alignment error problem of the mask process are widely used. The main problem in the self-aligned etching process is the loss of the etch barrier during etching for contact formation, and the word line is revealed, and then the polysilicon plug and the word line are connected to each other, resulting in malfunction of the device and etching. Etching stops in the middle of the contact and does not progress to the desired depth.
종래에는 식각방지막의 손실을 감소시키기 위하여 자기정렬식각을 폴리머(polymer)가 많이 발생하는 조건에서 식각을 실시한다. 즉, 층간절연막 측벽 또는 식각방지막 상부에 잔류하는 폴리머가 식각에 참여하지 않고 오히려 식각방지막으로서 역할하는 특성을 이용하는 것이다. 그러나 식각 도중에 과도하게 폴리머가 발생할 경우에는 오히려 콘택이 직각으로 뚫리지 못하고 경사(Slope)를 가지게되어 실제 열리는 활성영역(active area)의 면적이 작아지는 단점이 있다.Conventionally, in order to reduce the loss of the etch barrier layer, the self-aligned etching is performed under conditions in which a large amount of polymer is generated. That is, the polymer remaining on the sidewall of the interlayer insulating film or on the etch stop layer does not participate in etching, but rather uses a property of serving as an etch stop layer. However, if the polymer is excessively generated during etching, the contact may not be penetrated at right angles but may have a slope, thereby reducing the area of the active area that is actually opened.
이하, 첨부된 도면 도1a 내지 도1d를 참조하여 종래 기술의 문제점을 보다 상세하게 설명한다.Hereinafter, the problems of the prior art will be described in more detail with reference to the accompanying drawings, FIGS. 1A to 1D.
도1a는 워드라인(11) 및 마스크 절연막(12)을 형성이 완료된 반도체 기판(10) 상에 식각방지막(13) 및 층간절연막(14)을 형성하고, 층간절연막(14) 상에 콘택홀 형성 마스크인 포토레지스트 패턴(PR)을 형성한 다음 워드라인(11) 상부면을 덮는 식각방지막(13)이 노출될 때까지 층간절연막(14)의 일부를 식각한 상태를 보이고 있다. 이때 식각 과정에서 발생한 폴리머(15)가 콘택홀 측벽에 노출된 층간절연막(14)의 상에 잔류하게 된다.FIG. 1A shows an etch stop layer 13 and an interlayer insulating layer 14 on a semiconductor substrate 10 on which a word line 11 and a mask insulating layer 12 are formed, and a contact hole is formed on the interlayer insulating layer 14. After forming the photoresist pattern PR, which is a mask, a portion of the interlayer insulating layer 14 is etched until the etch stop layer 13 covering the upper surface of the word line 11 is exposed. At this time, the polymer 15 generated during the etching process remains on the interlayer insulating layer 14 exposed on the contact hole sidewalls.
도1b는 식각방지막이 손상되는 것을 방지하기 위해 이전의 식각조건 보다 상대적으로 많은 양의 폴리머가 발생하는 조건으로 식각을 실시하는 상태를 보이고 있다.FIG. 1B shows a state in which etching is performed under a condition in which a larger amount of polymer is generated than in the previous etching conditions in order to prevent the etching prevention film from being damaged.
층간절연막(14)의 식각초기 즉, 워드라인(11) 상부면을 덮는 식각방지막(13)이 드러나기 전까지는 폴리머가 적게 생기는 공정 조건을 적용하여 콘택이 수직하게 뚫리게 하고, 워드라인(11) 상부면을 덮는 식각방지막(13)이 드러나는 시점부터는 도1b와 같이 폴리머가 많이 발생하는 공정 조건을 적용하여 식각방지막(12)을 보호하게 된다. 또는 콘택이 경사지는 것을 무시하고 폴리머가 많이 생기는 조건으로 식각을 한다.Until the initial etching of the interlayer insulating layer 14, that is, the etch stop layer 13 covering the upper surface of the word line 11 is revealed, the contact conditions are vertically drilled by applying process conditions in which less polymer is formed, and the word line 11 is applied. From the time point at which the etch stop layer 13 covering the upper surface is exposed, as shown in FIG. 1b, the etch stop layer 12 is protected by applying process conditions in which a lot of polymers are generated. Alternatively, the contact is inclined and etched under conditions that produce a lot of polymer.
그러나 소자의 집적도가 높아짐에 따라 워드라인 사이의 간격이 좁아진 반도체 소자 제조 공정에서 상기와 같이 폴리머 다량 발생시키는 식각공정을 진행하게 되면 도1c와 같이 워드라인 상부에 증착된 폴리머(15)가 이웃하는 워드라인 사이의 공간을 좁게 하여 반도체 기판(10) 상의 식각방지막(13)에는 폴리머가 쌓이지 못하고 폴리머에 의한 식각만이 진행되어 식각방지막(13)의 손실(A)이 과도하게 발생하는 문제점이 있다.However, in the semiconductor device fabrication process in which the spacing between the word lines is narrowed as the device density increases, the etching process for generating a large amount of polymer as described above is performed. By narrowing the space between the word lines, the polymer may not be accumulated in the etch stop layer 13 on the semiconductor substrate 10, and only etching due to the polymer may proceed, resulting in an excessive loss (A) of the etch stop layer 13. .
또한 도1d에 도시한 바와 같이 워드라인(11) 위로 너무 많은 폴리머가 쌓이면 폴리머(15)와 폴리머가 서로 붙는 현상이 발생하여 더 이상 식각이 진행되지 못하는 식각정지(Etch Stop)현상(B)이 발생한다.In addition, as shown in FIG. 1D, when too many polymers are stacked on the word line 11, the polymer 15 and the polymer may be stuck to each other, thereby causing an etch stop phenomenon B in which the etching may not proceed anymore. Occurs.
상기와 같은 문제점을 해결하기 위한 본 발명은 고집적 반도체 소자의 자기정렬콘택 형성을 위한 층간절연막 식각 과정에서 과도한 폴리머의 형성으로 식각방지막이 손상되거나 식각정지 현상이 발생하는 것을 효과적으로 억제할 수 있는 반도체 소자 제조를 위한 자기정렬콘택 식각 방법을 제공하는데 그 목적이 있다. The present invention for solving the above problems is a semiconductor device capable of effectively suppressing the etching prevention film damage or the etch stop phenomenon due to the formation of excess polymer in the interlayer insulating film etching process for forming the self-aligned contact of the highly integrated semiconductor device It is an object of the present invention to provide a self-aligned contact etching method for manufacturing.
상기 목적을 달성하기 위한 본 발명은, 워드라인 형성이 완료된 반도체 기판의 전면에 식각방지막을 형성하는 단계, 상기 식각방지막 상에 층간절연막을 형성하는 단계, 상기 층간절연막 상에 콘택홀 영역을 정의하는 포토레지스트패턴을 형성하는 단계, 상기 포토레지스트패턴을 식각마스크로 하여 상기 워드라인 상부면을 덮는 상기 식각방지막이 드러나는 시점까지 제1조건으로 상기 층간절연막을 식각하는 단계, 상기 식각방지막이 드러나는 시점부터 상기 제1조건보다 많은 양의 폴리머가 발생하는 제2조건으로 상기 워드라인 사이의 층간절연막을 식각하는 단계, 상기 워드라인 사이의 식각방지막이 노출될 때까지 상기 제2조건보다 적은 양의 폴리머를 발생시키는 제3조건으로 상기 층간절연막을 식각하여 콘택홀을 형성하되, 상기 제3조건을 상기 제2조건보다 보다 많은 이온충돌효과를 발생시키는 조건으로 하여 상기 워드라인 상부면의 폴리머가 상기 워드라인 사이로 흘러들어가 상기 콘택홀의 측벽에 폴리머가 고르게 증착되도록 단계, 및 상기 포토레지스트패턴을 제거하는 단계를 포함하는 반도체 소자의 콘택홀 형성 방법을 제공한다.According to an aspect of the present invention, there is provided a method of forming an etch stop layer on an entire surface of a semiconductor substrate on which word lines are formed, forming an interlayer insulating layer on the etch stop layer, and defining a contact hole region on the interlayer insulating layer. Forming a photoresist pattern, etching the interlayer dielectric layer under a first condition until the etch stop layer covering the upper surface of the word line is exposed using the photoresist pattern as an etch mask; and from the time when the etch stop layer is exposed Etching the interlayer insulating film between the word lines under a second condition in which a greater amount of the polymer is generated than the first condition; and reducing the amount of polymer less than the second condition until the etch stop layer between the word lines is exposed. Forming a contact hole by etching the interlayer insulating layer under a third condition for generating the A polymer in the upper surface of the word line flows between the word lines under the condition of generating more ion collision effects than the second condition so that the polymer is evenly deposited on the sidewall of the contact hole; and removing the photoresist pattern. It provides a method for forming a contact hole in a semiconductor device comprising the step.
본 발명은 종래 자기정렬식각 공정에서 워드라인 사이의 식각방지막이 손실되거나 식각정지 현상이 발생하는 문제를 해결하기 위하여 이웃하는 워드라인 사이의 공간에 폴리머를 고르게 증착하는데 특징이 있다The present invention is characterized in evenly depositing a polymer in the space between neighboring word lines in order to solve the problem that the etch stop layer between the word lines or the etch stop phenomenon occurs in the conventional self-aligned etching process.
이웃하는 워드라인 사이에 고르게 폴리머를 형성하기 위해서 종래 2단계 식각 공정을 대신하여 3 단계 식각 공정을 실시한다. 즉, 폴리머가 적게 생기는 제1 조건으로 워드라인 상부면을 덮는 식각방지막이 드러나는 시점까지 층간절연막을 식각하고, 워드라인 상부면을 덮는 식각방지막이 드러나는 시점부터 소정량의 폴리머가 발생될 때까지 상기 제1 조건 보다 폴리머가 많이 발생하는 제2 조건으로 층간절연막을 식각하여 이미 노출되어 있는 식각방지막을 보호하고, 반도체 기판 상의 식각방지막이 노출될 때까지 제2 조건 보다 폴리머 발생이 적고 이온충돌 효과가 많이 발생하는 제3 조건으로 층간절연막을 식각한다.In order to form a polymer evenly between neighboring word lines, a three-step etching process is performed instead of the conventional two-step etching process. That is, the interlayer insulating layer is etched until the etch stop layer covering the word line upper surface is exposed under the first condition that the polymer is less produced, and the etch stop layer covering the word line upper surface is exposed until the predetermined amount of polymer is generated. The interlayer insulating film is etched under the second condition where the polymer is generated more than the first condition to protect the already exposed etch stop layer, and the polymer generation is less than the second condition and the ion collision effect is lowered until the etch stop layer on the semiconductor substrate is exposed. The interlayer insulating film is etched under a third condition that occurs frequently.
이와 같이 폴리머 양 및 이온충돌효과 정도가 변하는 3단계 식각 공정으로 층간절연막을 식각함으로써 콘택홀 바닥의 식각방지막이 과도하게 손실이 발생하는 것을 방지할 수 있고, 워드라인 또는 비트라인 위에 폴리머가 일정량 이상 쌓이지 않으므로 식각정지 현상 또한 억제할 수 있다.As such, the interlayer insulating layer is etched using a three-step etching process in which the amount of polymer and the ion collision effect are changed, thereby preventing excessive loss of the etch barrier layer at the bottom of the contact hole, and a predetermined amount or more of the polymer on the word line or the bit line. Since it does not accumulate, the etch stop phenomenon can also be suppressed.
도 2a 내지 도 2c를 참조하여 본 발명의 실시예에 따른 자기정렬콘택 형성 방법을 설명한다.A method of forming a self-aligned contact according to an embodiment of the present invention will be described with reference to FIGS. 2A to 2C.
먼저 도 2a에 도시한 바와 같이 워드라인(11) 및 마스크 절연막(12)을 형성이 완료된 반도체 기판(10) 상에 식각방지막(13) 및 층간절연막(14)을 형성하고, 층간절연막(14) 상에 콘택홀 형성 마스크인 포토레지스트 패턴(PR)을 형성한 다음, 워드라인(11) 상부면을 덮는 식각방지막(13)이 노출될 때까지 층간절연막(14)을 식각하는 제1 조건으로 식각한다. 상기 제1 조건은 상대적으로 폴리머가 적게 발생되는 조건을 적용하여 형성되는 콘택홀측벽이 수직을 이루도록 한다. 이러한 식각 과정에서 발생한 폴리머(15)가 콘택홀 측벽에 노출된 층간절연막(14) 상에 잔류하게 된다.First, as shown in FIG. 2A, an etch stop layer 13 and an interlayer insulating layer 14 are formed on the semiconductor substrate 10 on which the word line 11 and the mask insulating layer 12 are formed, and the interlayer insulating layer 14 is formed. After forming the photoresist pattern PR, which is a contact hole forming mask, is etched under a first condition of etching the interlayer insulating layer 14 until the etch stop layer 13 covering the top surface of the word line 11 is exposed. do. The first condition allows the contact hole side wall formed by applying a condition in which relatively little polymer is generated to be vertical. The polymer 15 generated during the etching process remains on the interlayer insulating layer 14 exposed on the sidewalls of the contact hole.
다음으로 도 2b에 도시한 바와 같이 식각방지막(13)이 손상되는 것을 방지하기 위해 소정량의 폴리머가 발생될 때까지 제1 조건 보다 상대적으로 많은 양의 폴리머를 발생시키는 제2 조건으로 식각방지막(13)이 드러나는 시점부터 층간절연막(14)을 식각한다. 이러한 제2조건에 의한 식각으로 콘택홀 측벽에 폴리머(15)가 골고루 형성된다.Next, as shown in FIG. 2B, in order to prevent the etch barrier 13 from being damaged, the etch stop layer may be formed under a second condition that generates a larger amount of polymer than the first condition until a predetermined amount of polymer is generated. The interlayer insulating film 14 is etched from the time point 13) is revealed. By the etching under the second condition, the polymer 15 is evenly formed on the sidewall of the contact hole.
이어서 도 2c에 도시된 바와 같이, 워드라인 사이의 식각방지막(13)이 노출될 때까지 상기 제2 조건 보다 적은 양의 폴리머를 발생시키면서 보다 많은 이온충돌(ion bombardment)을 발생시키는 제3 조건으로 층간절연막(14)을 식각한다. 이러한 제3조건에 의한 식각을 통해 형성되는 이웃하는 워드라인 사이의 콘택홀 내에 폴리머(15)가 고르게 증착된다.Next, as shown in FIG. 2C, the third condition generates more ion bombardment while generating less polymer than the second condition until the etch stop 13 between the word lines is exposed. The interlayer insulating film 14 is etched. The polymer 15 is evenly deposited in contact holes between neighboring word lines formed through the etching by the third condition.
상기 제3 조건으로 실시되는 식각 단계는 이온충돌효과를 증가시키기 위하여 저압력, 고이온밀도 식각장비인 HDP 식각장비 즉, HELICAL, HELICON, ECR(Electron Cyclotron Resonance), TCP(Transformer Coupled Plasma), MERIE(Magnetic Enhanced Reactive lon Etching) 또는 SWP(Surface Wave Plasma)의 식각장비에서 식각을 진행한다.The etching step carried out under the third condition is a low pressure, high ion density etching equipment HDP etching equipment, ie, HELICAL, HELICON, ECR (Electron Cyclotron Resonance), TCP (Transformer Coupled Plasma), MERIE to increase the ion collision effect. (Magnetic Enhanced Reactive lon Etching) or SWP (Surface Wave Plasma) etching equipment.
또한, 이온충돌효과(ion bombardment effect)를 증가시키기 위하여 상대적으로 낮은 압력에서 바이어스 전력을 증가시킨다. 본 발명의 실시예에서 압력은 최대 50 mTorr가 되도록 하고 최소 1000 W의 바이어스 전력을 인가한다. In addition, the bias power is increased at a relatively low pressure to increase the ion bombardment effect. In an embodiment of the invention the pressure is at most 50 mTorr and a bias power of at least 1000 W is applied.
또한, 폴리머양을 줄이기 위해 상대적으로 탄소(C)가 적고, 불소(F)가 많이 첨가된 CF4 또는 C2F6 가스를 이용하여 식각 도중에 발생하는 폴리머를 최대한 억제한다.In addition, in order to reduce the amount of polymer, CF 4 or C 2 F 6 gas containing less carbon (C) and fluorine (F) is added to suppress the polymer generated during etching as much as possible.
한편, 폴리머 발생 양을 줄이기 위해 통상적으로 폴리머의 발생을 증가시키기 위하여 첨가되는 탄소(C) 수소(H), 불소(F)가 함께 첨가된 CH3F, CH2F2 등의 가스의 양을 줄이거나 사용하지 않을 수도 있다.On the other hand, in order to reduce the amount of polymer generated, the amount of gases such as CH 3 F and CH 2 F 2 added together with carbon (C) hydrogen (H) and fluorine (F) are usually added to increase the generation of the polymer. It may be reduced or not used.
그리고 상기 제3 단계에서 폴리머가 고르게 증착되도록 하기 위해 반도체 기판(10)의 온도는 적어도 100 ℃가 되도록 한다.The temperature of the semiconductor substrate 10 is at least 100 ° C. in order to deposit the polymer evenly in the third step.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다. The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.
상기와 같이 이루어지는 본 발명은 자기정렬콘택 형성을 위한 층간절연막 식각과정에서 폴리머의 발생량 및 이온충돌효과 정도를 변화시키는 3단계 식각공정을 실시하여 식각정지 현상과 콘택홀 바닥 식각방지막의 과도 손실을 해결할 수 있다. 이에 따라 안정된 소자의 생산을 가능하여 수율 향상을 기대할 수 있다. The present invention made as described above solves the etch stop phenomenon and the transient loss of the contact hole bottom etch prevention layer by performing a three-step etching process to change the amount of polymer generation and the ion collision effect in the interlayer insulating film etching process for forming the self-aligned contact. Can be. As a result, it is possible to produce a stable device can be expected to improve the yield.
도1a 내지 도1d는 종래 기술에 따른 자기정렬콘택 형성 공정 단면도,1A to 1D are cross-sectional views of a process for forming a self-aligned contact according to the prior art;
도2a 내지 도2c는 본 발명의 실시예에 따른 자기정렬콘택 형성 공정 단면도,2A through 2C are cross-sectional views of a process for forming a self-aligned contact according to an embodiment of the present invention;
* 도면의 주요부분에 대한 도면 부호의 설명* Explanation of reference numerals for the main parts of the drawings
11: 워드라인 12: 마스크 절연막11: word line 12: mask insulating film
13: 식각방지막 14: 층간절연막13: Anti-etching film 14: Interlayer insulating film
15: 폴리머15: polymer
Claims (5)
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| KR10-1999-0065888A KR100510067B1 (en) | 1999-12-30 | 1999-12-30 | Self align contact etching method for forming semiconductor device |
| US09/745,445 US6468920B2 (en) | 1999-12-30 | 2000-12-26 | Method for manufacturing contact hole in semiconductor device |
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| US7723229B2 (en) * | 2005-04-22 | 2010-05-25 | Macronix International Co., Ltd. | Process of forming a self-aligned contact in a semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH09205143A (en) * | 1996-01-25 | 1997-08-05 | Sony Corp | Formation of contact hole |
| KR0126646B1 (en) * | 1994-03-21 | 1998-04-02 | 김주용 | Method for forming the contact hold of a semiconductor device |
| KR19980015773A (en) * | 1996-08-23 | 1998-05-25 | 김광호 | Method of forming a contact hole in a semiconductor device |
| KR100367493B1 (en) * | 1995-12-15 | 2003-03-06 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
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| JPH11238882A (en) * | 1998-02-23 | 1999-08-31 | Sony Corp | Manufacture of semiconductor device |
| KR100263905B1 (en) * | 1998-05-18 | 2000-09-01 | 윤종용 | Fabrication method for contact hole using etching blocking layer pattern |
| US6329292B1 (en) * | 1998-07-09 | 2001-12-11 | Applied Materials, Inc. | Integrated self aligned contact etch |
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| KR0126646B1 (en) * | 1994-03-21 | 1998-04-02 | 김주용 | Method for forming the contact hold of a semiconductor device |
| KR100367493B1 (en) * | 1995-12-15 | 2003-03-06 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
| JPH09205143A (en) * | 1996-01-25 | 1997-08-05 | Sony Corp | Formation of contact hole |
| KR19980015773A (en) * | 1996-08-23 | 1998-05-25 | 김광호 | Method of forming a contact hole in a semiconductor device |
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