KR100319035B1 - Thin film magnetic head and recording reproducing separate type magnetic head, and magnetic recording reproducing apparatus using them - Google Patents

Abstract

In order to prevent deterioration of recording performance in high frequency recording, and to provide a magnetic film head, a recording / reproducing separate pattern magnetic head having a magnetic pole width of 2 µm or less, and a 10 Gb / in ^second class ultra high density magnetic memory device, A lower magnetic film is used as the shielding film of the regeneration portion, and a nonmagnetic gap film is formed between the upper magnetic film and the lower magnetic film, and the lower magnetic film or a part of the upper magnetic film has a resistivity of 80 μΩcm or more higher than that of the other parts. The upper magnetic film is formed by frame galvanizing, and the gap portion of the lower magnetic film or the upper magnetic film is convex.

Description

THIN FILM MAGNETIC HEAD AND RECORDING REPRODUCING SEPARATE TYPE MAGNETIC HEAD, AND MAGNETIC RECORDING REPRODUCING APPARATUS USING THEM}

The present invention relates to a magnetic recording apparatus using a computer and an information processor, and more particularly, to an optimum new thin film magnetic head, a recording and reproducing separate magnetic head, and a magnetic memory reproducing apparatus.

Semiconductor storage means and magnetic storage means are mainly used for the storage (recording) device of the information apparatus. In terms of access time, semiconductor storage means are used for the internal storage device, and magnetic storage means are used for the external storage device from the viewpoint of large capacity and non-volatility. Current mainstream magnetic memories are magnetic disks and magnetic tapes. In the recording medium using them, a magnetic thin film is formed on an aluminum substrate or a resin tape. A functional unit having an electromagnetic converting function is used to write magnetic information on the recording medium. In addition, a functional unit utilizing a magnetoresistance phenomenon, a giant magnetoresistance phenomenon or an electromagnetic induction phenomenon is used to reproduce magnetic information. This functional unit is installed in the output-input section called the magnetic head. The magnetic head and the medium have a function of moving relatively to write magnetic information at an arbitrary position on the medium and to electrically reproduce the magnetic information as necessary. In the magnetic disk device as an example, the magnetic head includes a writing unit and a reproducing unit for writing magnetic information. The writing section is composed of a coil and magnetic poles that are covered above and below the coil and magnetically coupled to each other. The regeneration unit is composed of a magnetoresistive element element and an electrode for flowing a constant current to the magnetoresistive element element and detecting a change in resistance. A magnetic shielding layer is provided between the writing portion and the reproducing portion. In addition, these functional units are formed on the magnetic head body via a base layer. The electron conversion function is used at the time of recording, the magnetoresistance effect is used at the time of reproduction, and the reproduction of the magnetic information is performed by detecting the electromagnetic induction current induced in the coil provided in the writing unit. In this case, recording and reproduction can be performed in one functional unit.

The performance of the storage device is determined by the speed and the storage capacity during the input / output operation, and shortening the access time and increasing the capacity are inevitable in order to improve the competitiveness of the product. In addition to this, in recent years, miniaturization of memory devices has become important to reduce the weight and size of information devices. In order to satisfy this demand, it has become necessary to develop a magnetic storage device capable of writing and reproducing a large amount of magnetic information on a single recording medium. In order to satisfy this demand, it is necessary to increase the recording density of the apparatus. In order to realize high density recording, it is necessary to reduce the size of the magnetic domain. This can be realized by narrowing the width of the write stimulus and increasing the frequency of the write current flowing through the coil 26.

The reproducing head has high resolution to realize high recording density, and the recording head needs to narrow the gap length or track width in order to minimize the leakage of magnetic flux at the electrode end. As the gap length and track width become narrower, flux acidity between the electrode ends decreases. In a complex head in which an MR or GMR film is provided in the reproducing section, the reproducing section and the recording section are coupled to the recording apparatus and applied. The lower magnetic film of the recording section is used as the shielding film of the playback section. The manufacturing process is thus simplified and can be aligned on the same suspension system. Side fringe and high frequency characteristics are problematic for narrow track recording heads, and the minimum track width is determined by the former side fringe magnetic field. The problem of the side fringe magnetic field can be avoided to some extent by notching the lower magnetic film and forming a pedestal pole tip. Japanese Patent Laid-Open No. 7-262519 describes that a pedestal is provided at the tip of the stimulus to reduce side fringes. In addition, a highly saturated magnetic moment material is provided on the pedestal magnetic pole tip layer, and the second shielding layer is described as a Permalloy low saturated moment material. That is, the lower magnetic film is composed of two layers of high saturation / low saturation magnetic moments. However, no mention is made of the specific resistance of the magnetic film. Therefore, in consideration of the high frequency recording, the above invention cannot be satisfied, and the specific resistance and the saturation magnetic flux density have become important problems.

Further, according to the prior art, when the magnetic pole width is narrowed to 2.5 mu m and the frequency is raised to about 90 MHz, a memory density of ² Gb / in ² can be realized. In addition, when higher densities are required, it is apparent that the following problems arise, making it difficult to achieve high densities.

This problem may include problems in manufacturing techniques for narrow magnetic poles and magnetic problems caused by narrowing the magnetic poles. First, the problem regarding manufacturing technology will be explained. The magnetic poles constituting the magnetic gap need to generate (leak) the magnetic field necessary to reverse the magnetization of the recording medium. This magnetic field is determined by a magnetic parameter called the coercive force of the recording medium, and it is necessary to reinforce in recent high density recording media. Therefore, it is not possible to reduce the volume of the magnetic pole part in order to induce the ferromagnetic field. That is, the thickness of the magnetic pole cannot be made thin even when the magnetic pole width is narrowed.

A material generally used as the magnetic pole material is a Ni-Fe alloy. Reactive dry etching is difficult for this material. For this reason, the magnetic pole of a thick film | membrane cannot be formed. It is therefore suitable for the formation of magnetic poles, and the galvanizing method is used.

In the galvanizing method, Ni-Fe is selectively grown only on the magnetic pole portion where the galvanizing electrode is exposed by masking with a resist pattern in advance. Therefore, in order to form the fine magnetic pole pattern of 2 micrometers or less, it is necessary to form a resist pattern with the width of 2 micrometers or less beforehand.

By the way, the thickness of a mask pattern is needed beyond galvanizing height in order to maintain a function as a mask at the time of galvanizing. Galvanizing masking patterns whose height and width are limited are formed by the proximity exposure method. However, the resolution limit of this method is about 2 μm (when the thickness is about 5 μm), and a pattern below this resolution limit cannot be formed (the manufacturing method of the X-ray lithography method is not considered here. Did). For this reason, there exists a problem that a magnetic head for high density recording cannot be manufactured as it is conventionally.

In addition, in the above-described magnetic head configuration, it is known that the magnetic path resistance of the adjacent portion of the gap increases when the magnetic pole width is narrowed. Therefore, since the magnetic pole width becomes narrow, a magnetic flux flows from the upper magnetic film to the lower magnetic film, and a necessary magnetic field does not occur in the gap portion, causing a problem. In addition, since the writing frequency is increased to realize high density recording, a problem occurs that the writing efficiency is lowered. That is, eddy currents are likely to occur in the magnetic pole portion, and the magnetic resistance increases due to this effect, and the write efficiency is lowered.

The cause of the eddy current can be formed by a high resistance film or an amorphous film in which the magnetic gap is first applied only to the metal film and then the magnetic path induces little eddy current. It is a general disadvantage of the conventional magnetic head to manufacture the magnetic pole by the galvanizing method, in which the magnetic path cannot be formed of a high resistance film or an amorphous film which hardly generates eddy currents.

In order to prevent deterioration of recording performance in high frequency recording, it is an object of the present invention to provide a magnetic memory head in which a high specific resistance magnetic film is formed at the extremes of a thin film magnetic head, a recording reproducing separation magnetic head, and a magnetic memory head.

In the thin film magnetic head to which the present invention is applied having an upper magnetic film and a lower magnetic film arranged through a nonmagnetic gap film, at least one end of the upper magnetic film or the lower magnetic film is composed of two or more magnetic film layers, The resistivity of one of the two or more layers is higher than that of the other of the two or more layers, and at least one end of the upper magnetic film or the lower magnetic film is composed of two or more magnetic film layers, and the nonmagnetic The resistivity of one of the two or more magnetic film layers spaced from the gap film is higher than the resistivity of the other of the two or more magnetic film layers connected to the nonmagnetic gap film, and the upper magnetic film and the lower magnetic film. The end of is convex, and at least a portion of the upper magnetic film or the lower magnetic film has a resistivity of 50 µΩcm or more.

A recording and reproducing separate magnetic head to which the present invention is applied having an information writing recording head, an information reading reproducing head, and a magnetic shield provided therebetween, wherein the recording head is provided with an upper magnetic film arranged through a nonmagnetic magnetic gap film; Has a lower magnetic film, at least one end of the upper magnetic film or the lower magnetic film is composed of two or more magnetic film layers, and the resistivity of one of the two or more layers is higher than the other of the two or more layers. Higher, and the resistivity of one of the two or more magnetic film layers arranged spaced apart from the nonmagnetic gap film is higher than the resistivity of another layer of the two or more magnetic film layers connected to the nonmagnetic gap film, and the upper magnetic film Or at least a portion of the lower magnetic film has a specific resistance of 50 μΩcm or more, and the regeneration head is a ferromagnetic material and the ferromagnetic material. It has the anti-ferromagnetic material having a connection unidirectional anisotropy, and, and at least a portion of the anti-ferromagnetic material consists of a Cr-Mn alloy, the at least one part connected to said antiferromagnetic magnetic material of the ferromagnetic body consists of Co or Co alloy.

In the magnetic memory device to which the thin film magnetic disk rotates at a speed of 4000 rpm or more at the time of recording / reproducing and the recording frequency is 45 MHz or more, the magnetic memory device comprises the thin film magnetic disk for recording information and the thin film magnetic disk. A rotating means for rotating, a recording reproducing separate magnetic head provided on the floating slider and having a recording head for writing information and a reproducing head for reading information, and a conveying supporting and conveying the floating slider for the membrane magnetic disk. Means; the recording head has an upper magnetic film and a lower magnetic film arranged through a nonmagnetic magnetic gap film, and at least one end of the upper magnetic film or the lower magnetic film is composed of two or more magnetic film layers; The specific resistance of one of said at least two layers is equal to that of the other of said at least two layers Higher, the resistivity of one of the at least two magnetic film layers arranged spaced apart from the nonmagnetic gap film is higher than the resistivity of another layer of the at least two magnetic film layers connected to the nonmagnetic gap film, An end portion of the film formation or the lower magnetic film is convex, or at least a portion of the upper magnetic film or the lower magnetic film has a resistivity of 50 μΩcm or more, and the regeneration head is connected to the ferromagnetic material and the ferromagnetic material. It has an antiferromagnetic material, at least a part of the antiferromagnetic material is made of a Cr-Mn alloy, and at least one portion of the ferromagnetic material connected to the antiferromagnetic material is made of Co or Co alloy.

(Recording head)

In the recording head according to the present invention, the lower magnetic film serves as a shielding film by a reproducing head such as MR or GMR, and a nonmagnetic gap film is formed between the upper magnetic film and the lower magnetic film, and the lower magnetic film or the upper magnetic film is formed. A part is formed by a dry process such as a sputtering method or a vacuum evaporating coating, preferably a resistivity of 80 μΩcm or more is provided, the flame of the galvanizing film is formed of SiO ₂ , and the width thereof is The track width for recording is determined, and the track width is preferably 1.5 mu m or less.

It is preferable that the magnetic film having a high specific resistance of 80 mu OMEGA cm or more has a saturation magnetic flux density of 1.5T or more, the magnetic film ends above / below the gap film are treated with RIE, and the width of the magnetic film above / below the gap film is adjusted.

In addition, the magnetostriction constant of the magnetic film having a high resistivity of 80 μΩcm or more is 1 × 10 ⁻⁷ or less, and a film thickness thicker than a part of the uppermost and lowermost magnetic films of 0.5 μm is formed as a high resistivity film. It is preferable. It is preferable that a part of the high resistivity magnetic film is wider than a part of the low resistivity magnetic film with respect to the width of the magnetic film seen from the looming side.

As the surface recording density increases, the recording frequency of the magnetic disk unit also tends to increase. When the recording frequency exceeds 100 MHz, the eddy current loss of the magnetic film becomes large and the recording characteristics deteriorate. When the track width is 2 µm, the gap length is 0.3 µm, and the magnetic film has a saturation magnetic flux density of 1.0T, the magnetic resistivity of the magnetic film becomes larger under high frequency conditions of 100 MHz or more, so that the magnetic field strength increases, and the specific resistance becomes 80 µΩcm or more. . From the results of this calculation, it can be seen that a film having high resistance needs to be used at one end of the magnetic pole, particularly at one end of the magnetic film. Further, in order to reduce the noise after writing and to reduce the heat treatment while the magnetic field is applied to the caption at the time of manufacture of the recording head, it is preferable to set the magnetostriction constant of the caption of 1x10 ^-7 or less. In addition, in order to reduce the film thickness of the magnetic film and prevent its saturation, it is preferable that the saturation magnetic flux density of the magnetic film is 1.5T or more.

Comparing the current mass-produced head configuration with the floating side configuration shown in Fig. 3, the higher Bs of the magnetic film 1 in contact with the magnetic film 5 and the gap film 4, and the magnetic film 5, The higher specific resistance p of the magnetic film 12 spaced apart from the gap film contributes to the high magnetic gradient and high frequency characteristics. In the case where all of the above-described magnetic films are made of high Bs, high p, low lambda, low Hk, and a single layer, a recording head having high magnetic field strength and good high frequency characteristics is provided, but it is difficult to mass-produce a magnetic film of such characteristics. Therefore, by making the magnetic film near the gap periphery high Bs and part or all of the magnetic poles spaced apart from the gap of the magnetic material high p, a magnetic head having good recording characteristics can be provided using a material that can be mass-produced. . To form a thin film made of a thick film (about 3 mu m) having a high specific resistance and a high saturation magnetic flux density satisfying these properties by the galvanizing method, and a 3d transition metal having a small magnetostriction constant (1 × 10 ⁻⁷ or less) Is difficult. However, when the sputtering method is used, the magnetic film satisfying these characteristics can add oxygen and nitrogen to the Fe-based, FeCo-based, or FeNiCo-based, and can control the magnetostriction constant by using another alloying element. By using the sputtering method, the eddy current can be reduced by forming a multilayer or mixed layer film with a ferromagnetic alloy film of Fe-based, FeCo-based or FeNiCo-based, and oxides such as Al ₂ O ₃ and SiO ₂ . The production of these magnetic films using only the films produced by the sputtering method and the production of the magnetic films with narrow tracks (preferably 1.5 µm or less) are more difficult than those using the galvanizing method, and also on the gap film using the galvanizing method. It is further necessary to manufacture a portion (about 3 times the gap length) in contact with at least the gap film inside the upper magnetic film UP formed therein.

The magnetic field strength, which is one of the performances of the recording head, is higher by making the portion closest to the gap in the core higher than the high Bs portion away from the gap. In particular, since the magnetic properties of the magnetic film near the floating side of the gap effectively affect the performance, the portion contacting the gap film from the floating side provided at high Bs is provided at high Bs, and the portion except the high Bs film is high. It is effective as a recording head with a narrow track width (1.5 mu m or less) so as to have a configuration provided in p (even at low Bs). As viewed from the floating side, the width of the magnetic film in contact with the gap film needs to be formed in a width corresponding to the value of the track width. When the magnetic film is formed by the galvanizing method, the distance of the galvanizing frame determines the width of the galvanizing film, that is, the track width, and forms a galvanizing film having a width of 0.3-1.5 μm. In the galvanizing method, Fe, Ni, Co, and binary or ternary alloying films thereof can be easily formed, and high Bs (1.5T or more) films (CoNiFe alloy, NiFe alloy) can also be formed. A galvanizing film that is formed may be applied to a portion of the magnetic core that contacts the gap film that determines the track width and may be disposed near the gap film. When it consists only of ferromagnetic chemical elements, the specific resistance ρ of this galvanizing film is about 50 µΩcm, and by adding ternary transition metal chemical elements, the specific resistance ρ of the film of Bs 1.3T or more is about 60 µΩcm and metalloid By adding a chemical element, the resistivity p in the case of a galvanizing film of Bs 0.9T or more is about 100 µΩcm. As described above, if the high Bs film is required for the magnetic films 1 and 5 in FIG. 3 and the specific resistance p of the magnetic films 12 and 5 is high, the specific resistance p of the metal films 1 and 5 need not be high. . That is, with respect to the volume of the stimulus material, the proportion of the high ρ material occupied in this volume increases than that of the high Bs film (low ρ) material. As shown in Fig. 1, by sputtering, a film is formed by a portion of the lower magnetic film 11 having a high specific resistance (80 µΩcm or more), a high Bs> 1.5T and a magnetostriction constant (size) <1 × 10 ⁻⁷ . A nonmagnetic film of 0.1 to 0.2 mu m is formed thereon as the gap film 4 by the sputtering method. In addition, the base 3 of the galvanizing film is formed by the sputtering method. This base 3 is formed of a high resistivity film. A resist flame 2 is formed on the base 3 and the upper magnetic film is manufactured by galvanizing. It can be seen that the track width is fixed to the distance between the frames, and can be formed without composition fluctuation up to 0.5 Ωcm by the flame galvanizing method. Further, the base 3, the gap film 4 and the lower magnetic film (the upper screen film of MR or GMR) by milling with the upper magnetic film 1 as a mask or by dry etching such as RIE (reactive etching) method. Side fringes can be reduced by removing a portion of the without reattaching. The film thickness of the high resistivity film can be deteriorated in magnetic field strength, that is, the film thickness of the gap film is formed to be 0.5 to 3 times or more to suppress deterioration of recording performance at high frequencies. Apart from FIG. 1, the film above the gap 4 (the lower magnetic film 5 and the upper magnetic film 1) is formed by a galvanizing method, and the lower magnetic film 5 or the upper magnetic film 1 The recording performance can be improved by manufacturing the high resistivity film by the wider and thicker film. For example, the high resistivity film 12 can be formed on a part of the flame and on the upper magnetic film 1 by the sputtering method. In this case, the gap film is provided as a conductive nonmagnetic film (Cr alloy or the like). The flame is also made of an oxide such as SiO _2, and a manufacturing method is used in which the flame removal process is not applied in FIG. 1 and the flame remains on the floating side. Resists are used for galvanizing flames. 4 is similar to the configuration of FIG. 1 and a high resistivity, high Bs thin film 12 is formed on the gap 4 by galvanizing. The film thickness is 0.5 to 3 times the gap, and if the film is constituted within this range thickness, the effect of high specific resistance can clearly improve the recording performance and also galvanize. This high resistivity galvanizing film 12 is a ferromagnetic alloy film containing chemical elements such as P, B, O and the like.

It is difficult to produce films of high Bs, low Hk, high p and low lambda by this galvanizing method. As shown in FIG. 5, a portion 11 of the upper screen film and a portion 12 of the upper magnetic film may be provided using a sputtering method using a high resistivity film (80 μΩcm or more).

In FIG. 5, the magnetic film 13 and the magnetic film 14 are manufactured above and below the gap film. The Bs of the magnetic films 13 and 14 is higher than the Bs of the high resistivity film (part of the shielding film 11 and part of the upper magnetic film) produced by the sputtering method. By increasing the Bs of the magnetic film near the gap film, the magnetic field strength from the gap is increased, and the high frequency characteristics are improved by the high rho magnetic films 11 and 12 produced by the sputtering method. In addition, as shown in FIG. 5, the widths of the magnetic film 13 and the gap film 4 and the magnetic film 14 (as viewed from the floating side) are magnetic films 11 and 12 spaced apart from the gap film 4. The magnetic field gradient of the recording head can be increased by being narrower than the width of?).

The recording head of the present invention is configured to sandwich the magnetic films of the gap portions with convex magnetic poles arranged face to face as described above.

As for the magnetic pole shape of the head of the magnetic core that is exposed in the proximity of the magnetic head to the recording medium, the upper magnetic pole has a convex shape and convex with respect to the lower magnetic pole, the lower magnetic pole has a convex shape and convex with respect to the upper magnetic pole. The convex portions of the upper and lower magnetic poles are arranged face to face, and the width centers of the convex portions of the upper magnetic poles and the width centers of the convex portions of the lower magnetic poles are arranged on the same line, respectively. It is desirable to. It is preferable to produce the recording head of the present invention by the following production process.

(1) After laminating a lower magnetic pole material on the magnetic head base structure, an insulating nonmagnetic film is laminated, and a material that becomes a convex portion constituting a part of the upper magnetic pole is laminated.

(2) A resist pattern is formed in a region corresponding to the convex portion of the upper magnetic pole on the laminated structure by using the lithography method.

(3) Using the resist pattern and the member that is the convex portion of the upper magnetic pole as a mask, the convex portion is formed on the lower magnetic pole by etching the insulating nonmagnetic film and the lower magnetic pole.

(4) After forming the member which becomes a convex part by upper and lower magnetic poles, a nonmagnetic and insulating film is laminated | stacked on the whole surface, and the film which has thickness exceeding a convex part in the area | region except a convex part is laminated | stacked.

(5) By forming the remaining members constituting the upper magnetic pole member, the upper magnetic pole is formed to rotate the convex portion as a valley.

(6) The nonmagnetic and insulating films are planarized, and a part of the member forming the convex portion is exposed on the flat surface.

(7) The remaining members constituting the upper magnetic pole member are formed.

(Playhead)

The reproducing head of the present invention comprises the magnetoresistive effect type element. The soft magnetism film and the hard magnetism membrane are inclined at 90 ° to each other in the direction of the magnetic field, and the magnetic field of the magnetic film forming the free layer forms a layer fixed by the magnetic field from the recording medium. It can change 0-180 ° with the magnetic field of magnetic film.

In the present invention, a magnetic recording apparatus is used, and a magnetoresistive effect element using a large magnetoresistive effect is added as a means in which the magnetic head of the magnetic recording apparatus corresponds to a high recording density.

As a feature of the present invention, an antiferromagnetic thin film generating a displacement coupling bias can be improved by directly stacking a magnetic film. As a means for solving the subject of the present invention, firstly, the main components of the antiferromagnetic thin film consist of chromium and manganese.

Second, in order to improve the properties, the body-centered cubic structure of this composition is added by adding a plating group, one of aurum, silver, copper, nickel and cobalt or a plurality of chemical elements selected from them. By improving the cell constant holding?), The size and temperature characteristics of the exchange coupling magnetic field are improved. Third, in order to improve the magnitude of the unidirectional anisotropy occurring in the ferromagnetic and antiferromagnetic materials, the composition of the ferromagnetic material is provided as a cobalt alloy containing cobalt or cobalt as a main component. It is good for the composition of the cobalt alloy when the Co-Fe-Ni alloy is used as the soft magnetic material and also good when the Co-Pt alloy is used as the high coercive material. Fourth, heat treatment is performed to match the direction of unidirectional anisotropy. Fifth, it is particularly effective for spin valve type magnetoresistive film. The hard magnetic layer in contact with the antiferromagnetic layer may be composed of a laminate of hard magnetic layers having three or more layers, or may be configured to have a total thickness of 3 nm or more to prevent deterioration due to heat of the properties of the magnetoresistive effect.

In the present invention, when the magnetic recording / reproducing apparatus uses the magnetoresistive element described above in the reproducing section, the recording wavelength recorded on the high recording medium becomes shorter, and the width of the recording track is narrowed to sufficient reproducing capacity. The record can be kept well.

That is, the magnetoresistive element of the present invention can realize a fixed bias or a longitudinal bias with an antiferromagnetic material of chrome group alloying or an antiferromagnetic material of Mn group alloy and cobalt-based ferromagnetic material. Further, the hard magnetic layer in contact with the antiferromagnetic film is composed of a stack of three or more hard magnetic layers, for example Co / NiFeCr / Co, and has a total thickness of 3 nm or more, preferably 20 nm. Thus, a spin valve type magnetoresistive element having a high resistance change factor, a large exchange coupling magnetic field and a good sensitivity magnetoresistive element having a high sensitivity and high reliability, a magnetic head, and a magnetic recording device having a high recording density are realized. Can be obtained.

The regeneration head of the present invention is a magnetic sensor comprising a ferromagnetic material and an antiferromagnetic material attached to the ferromagnetic material, wherein at least a portion of the antiferromagnetic material for causing unidirectional anisotropy to appear in the ferromagnetic material is made of a Cr-Mn alloy, and an antiferromagnetic material of the ferromagnetic material At least part of the attachment is made of Co or Co alloy.

In addition, the regeneration head of the present invention includes a ferromagnetic magnetic layer that is separated into a nonmagnetic metal layer and an antiferromagnetic layer, that is, an antiferromagnetic layer in contact with one of the first and second magnetic layers, and the ferromagnetic material when the applied magnetic field is zero. The magnetization direction of the first magnetic layer of crosses the magnetization direction of the second layer, the magnetization direction of the second magnetic layer is fixed or not fixed, and the regeneration head of the present invention also provides means for causing the magnetoresistive effect element to generate a current. And means for detecting a change in electrical resistance of the magnetoresistive sensor caused by the rotation of the magnetization of the first layer when the function of the detected magnetic field is imparted, wherein the first and second magnetic layers are Co or Co alloy, The antiferromagnetic layer is a Cr-Mn alloy.

The magnetoresistive effect element is composed of a soft magnetic layer / non-magnetic layer / hard magnetic layer and anti-ferromagnetic layer, the magnetoresistive effect function is good when the magnetization of the soft magnetic layer is changed according to the external magnetic field and the relative angle by the magnetization of the hard magnetic layer This changes.

Alloys containing 30-70 atomic% Mn are preferred for the Cr-Mn alloy, and are also selected from Co, Ni, Cu, Ag, Au, Pt, Pd, Rh, Ru, Ir, Os and Re It may comprise 0.1-30 atomic% of the content.

The hard magnetic layer is composed of a laminate having a Co or Co alloy film on both sides through a Co or Co alloy or a Ni alloy film, and the antiferromagnetic layer is made of a Cr-Mn alloy or a Cr-Mn-X alloy, wherein X is Co And at least one selected from the group of Ni, Cu, Ag, Au, Pt, Pd, Rh, Ru, Ir, Os and Re and the total content thereof is preferably 0.1-30 atomic%.

Further, in the preferred embodiment of the present invention, the magnetic memory device operates at an ambient temperature of 100 ° C. or higher, and the unidirectional anisotropy generated in the laminated structure of the hard magnetic layer and the antiferromagnetic layer is characterized by the direction of the magnetic field generated from the current flowing through the magnetic sensor. A polarization process is performed, which is about the same and which is heated to a temperature lower than the blocking temperature at which the unidirectional anisotropy disappears and cools while applying the magnetic field.

It is preferable in the present invention to solve at least one of the following problems. The saturation magnetic flux density of the second hard magnetic layer is smaller than the saturation magnetic flux density of the first and second hard magnetic layers.

The thickness of the hard magnetic layer is 3 nm to 20 nm. The second hard magnetic layer is 50-85 atomic percent nickel, ferrum selected from at least one of chromium, vanadium, titanium, copper, gold, silver, platinum groups, tantalum, niobium, zirconium and hafnium. 15-20 atomic% and the remainder, containing less than 35% in total and a saturation magnetic flux density of 0.9 Tesla or less.

At least one of the first and third hard magnetic layers is made of a magnetic material having a saturation magnetic flux density of 0.1 or more Tesla containing Co as a main component.

The Cr alloy antiferromagnetic film has a structure in which a crystal grating or CsCl type structure having a body centered cubic structure is deformed within a range of 0.1 to 10%.

Heat treatment deforms the Cr alloy antiferromagnetic film.

The Co alloy consists of Co, Ni and Fe, the composition of which is 30 to 98 atomic% Co, 0 to 30 atomic% Ni, 2 to 50 atomic% Fe, in particular 85 to 95 atomic% Co, 5 to 15 atomic Fe %, Or Co 50-70 atomic%, Ni 10-30 atomic%, and Fe 5-20 atomic%.

The Co alloy is composed of Co, Ni, Fe and additional elements X, total Co, Ni, Fe is 70 to 98 atomic%, X is 2 to 30 atomic%, Cu, Cr, V, Ti, Ta, At least one of the Nb, Zr, Hf and Platina groups. An oxide film is formed on the surface of the Cr alloy antiferromagnetic film by heat treatment, film formation technique or ion implantation.

The means for fixing the magnetization direction of the second magnetic layer of the ferromagnetic material is a second magnetic film of the ferromagnetic material having a higher saturation magnetic coercivity than the first magnetic layer of the ferromagnetic material.

The means for fixing the magnetization direction of the second magnetic layer of the ferromagnetic material is an antiferromagnetic layer in direct contact with the second magnetic layer of the ferromagnetic material.

The means for fixing the magnetization direction of the second magnetic layer of the ferromagnetic material is a hard magnetic layer in direct contact with the second magnetic layer of the ferromagnetic material. The magnetization direction of the thin film layer of the individual ferromagnetic material with respect to the current direction is determined so that anisotropic magnetoresistance can be added to the electric resistance variation of the magnetoresistive element generated by the magnetization rotation of the magnetic layer of the individual ferromagnetic material.

The magnetization direction of the thin film layer of the individual ferromagnetic material with respect to the current direction is determined so that anisotropic magnetoresistance can be added to the electric resistance variation of the magnetoresistive effect element generated by the magnetization rotation of the first magnetic layer of the ferromagnetic material.

Means are further provided for generating longitudinal bias sufficient to maintain the first magnetic layer of ferromagnetic material in a single region state.

The means for generating the longitudinal bias has an antiferromagnetic layer in direct contact only within the end region of the first magnetic layer of the ferromagnetic material.

The means for generating the longitudinal bias has a hard magnetic layer in direct contact only within the end region of the first magnetic layer of the ferromagnetic material.

1A, 1B and 1C are explanatory views seen from a floating surface of a recording head using a high resistivity film as part of a lower magnetic film.

2A and 2B are explanatory views seen from the floating surface of the recording head using the high resistivity film as part of the upper magnetic film.

3A, 3B and 3C are explanatory views seen from the floating surface of the recording head using the high resistivity film as part of the upper magnetic film.

4 is an explanatory view seen from the floating surface of a recording head using a high resistivity film for upper and lower magnetic films;

FIG. 5 is an explanatory view seen from a floating surface of a recording head using a high resistivity film for upper and lower magnetic films; FIG.

6A, 6B, 6C, 6D, and 6E are sectional views viewed perpendicular to the floating side of the recording head using a high resistivity film and a highly saturated magnetic flux density film as part of a magnetic pole;

7A, 7B, 7C, and 7D are sectional views viewed perpendicular to the floating side of the recording head using the high resistivity film as part of the magnetic poles;

8A, 8B and 8C are conceptual views illustrating the magnetic head of the present invention.

9 is an explanatory diagram showing a problem in a conventional magnetic head;

10 is an explanatory diagram showing the effect of the present invention.

11A, 11B and 11C are schematic views of a magnetic pole configuration seen from the sliding surface (sliding surface) side of a conventional magnetic head.

12A, 12B, 12C and 12D show manufacturing processes for manufacturing the main part of the magnetic head of the present invention.

Fig. 13 shows a manufacturing process for manufacturing the main part of the magnetic head of the present invention.

14A and 14B show a recording / reproducing head using a high resistivity film or a highly saturated magnetic flux density film as part of a magnetic pole;

Fig. 15 is a perspective view of a magnetoresistive element detecting unit of a spin valve type magnetic head according to the present invention.

Fig. 16 is a configuration diagram of a spin valve film using chromium-manganese alloy film / NiFe in the present invention.

17 is a block diagram of a spin valve film using a chromium-manganese alloy film / Co in the present invention.

18 is a configuration diagram of a spin valve type magnetoresistive effect film used in the present invention.

Fig. 19 is a diagram of a magnetic disk unit using the recording and reproducing head in the present invention.

<Explanation of symbols for main parts of drawing>

1: upper magnetic film

2: resist frame

3: base (base)

4: gap film

5: upper shielding film (lower magnetic film)

11: high resistivity lower magnetic film

12: high specific resistance upper magnetic film

21: nonmagnetic metal layer

22: magnetic film

23: antiferromagnetic material layer

24: lower film

25: lower core (lower magnetic pole)

26: coil

27: upper core (upper magnetic pole)

30 electrode

32, 33: stimulus member

71: resist pattern

72: magnetic alloy film (alumina film)

74: substrate

75: alumina film (insulating nonmagnetic film)

73: lower electrode film (magnetic film)

77: upper electrode

76: nonmagnetic insulating film

(Example 1)

1A, 1B, 1C to 5 show the structure near the recording head portion of the magnetic head seen from the floating surface. In the upper shielding film 15, there is an MR film or a GMR film serving as a reproduction head. Although the board | substrate was not specifically limited, It is preferable that a board | substrate has small surface unevenness (5 nm or less).

As shown in Figs. 1A, 1B, and 1C, a part of the lower magnetic film is formed by a sputtering method to have a high specific resistance (higher than 80 mu Ωcm), Bs> 1.5T and magnetostriction constant (absolute value) <1 × 10 ^-7. Is formed, and a nonmagnetic film having a thickness of 0.1 to 0.2 mu m is formed thereon so as to be used as the gap film 4 by the sputtering method. As a magnetic film that satisfies this characteristic, a high resistivity film can be obtained by adding oxygen or nitrogen to Fe, FeCo or FeNiCo alloys and at the same time adding an element having a high affinity to oxygen or nitrogen.

In addition, the magnetostriction constant can be controlled by adding other alloying elements and also depends on the concentration of oxygen or nitrogen. Further, the base 3 of the plated film is formed on the high resistivity film by the sputtering method.

This base 3 may be a high resistivity film and the film thickness is thinner than 100 nm. The resist frame 2 is formed on the base 3 and the upper magnetic film is formed by a plating method. The track width was determined by the distance between the frames, and it was confirmed by the frame plating method that the upper magnetic film can be manufactured to a thickness of 0.5 mu m without composition variation, and a head having a track width of 0.5 to 1.5 mu m is manufactured. The resist frame is manufactured by masking with an oxide such as SiO ₂ by RIE (reactive ion etching) method. In this frame plating method, an alloy film formed mainly of Fe, NiFe, CoFe, or CoNiFe having a specific resistance of 60 µΩcm or less. By forming a portion of the upper magnetic film produced by this plating method into a high resistivity film, the structure shown in FIG. 5 can be obtained. In addition, the side fringes are reduced by removing parts of the base 3, the gap film 4 and the lower magnetic film (the upper shielding film of MR or GMR) without reattachment by milling or RIE using the upper magnetic film 1 as a mask. can do. In the case of using the RIE method, the type of gas, gas pressure and etching rate can be optimized to etch almost vertically using the upper magnetic film as a mask. The film thickness of the high resistivity film can be set to 0.5 to 3 times the film thickness of the gap film to suppress deterioration of high frequency recording performance. The film thickness of the upper magnetic film is 2 to 3 mu m and it is difficult to form all of the upper magnetic film into a high resistivity plating film. This is because the plating film that satisfies all the characteristics has a large film stress, and various kinds of additives for high resistance and additives for stabilizing the plating bath are used. It is difficult to adjust the magnetostriction. However, it is possible to manufacture a magnetic head having the structure shown in Fig. 5 in which part of the upper magnetic film is formed of a high resistivity film.

As shown in Figs. 3A, 3B, and 3C, the films of the upper side and the lower side (the upper magnetic film 1 and the lower magnetic film 5) of the gap 4 are manufactured by the plating method, and the high resistivity film 12 ) Is produced on a part of the frame and the upper magnetic film 1 by the sputtering method. In this case, the gap film is a conductive nonmagnetic film (made of Cr alloy or the like). The frame is made of an oxide such as SiO ₂ , and there is no frame removal process as shown in FIG. 1 so that the frame remains on the floating surface. In addition, the height of the frame may be a value close to the thickness of the upper magnetic layer 1. The thickness of the upper magnetic film 1 and the lower magnetic film 5 is as thin as three times or less the thickness of the gap film.

Oxides such as SiO ₂ after forming the gap 4 and the base 3 by the sputtering method as shown in FIGS. 2A and 2B as a recording head having a structure similar to that of FIGS. 3A, 3B, and 3C. Frame is formed, and a low resistivity ferromagnetic film is formed as an upper magnetic film through the plating method, and a high resistivity film is formed on a part of the frame and the upper magnetic film 1 by the sputtering method similarly to FIGS. 3A, 3B and 3C. 12) is formed. In this case, since the width of the lower magnetic film 5 is wider than the width (track width) of the upper magnetic film 1, the side fringe is larger than in other methods.

4 is similar to that of FIG. 1, but the high resistivity film 12 is also formed on the gap 4 by the plating method. The film thickness is 0.5 to 3 times the gap thickness. When the film thickness is within this range, the effect of high specific resistance can be manifested in the recording performance and can be produced by the plating method. The high resistivity plating film 12 is a ferromagnetic alloy film containing elements such as P, B, O, and the like. In addition, as shown in FIG. 5, a part of the upper shielding film 11 and a part of the upper magnetic film 12 are formed by a high resistivity (about 80 μm cm) film through the sputtering method.

FIG. 5 is a configuration of the recording head as seen from the floating side, and the surface configuration obtained by cutting the head in the vertical direction of the floating side is shown in FIG. 6E.

The lower and upper magnetic poles are configured to have a multi-layer configuration, and the uppermost and lowermost films 13 and 14 in contact with the gap portion 5 are provided by the galvanizing method. The upper and lower magnetic films 13 and 14 are films in which a 3d transition metal chemical element is added to a NiFe alloy, a CoNiFe- (Pt, Pd) alloy, or an alloy thereof.

The gap film is manufactured using the same frame as the top and bottom magnetic films.

The magnetization characteristics of the uppermost and lowermost magnetic films 13 and 14 are Bs of 1.0 T or more, specific resistance of 60 µΩcm or less, Hk of 20 Oe or less, and magnetostriction constant (lambda) of 1x10 ^-5 or less.

The film thicknesses of the top and bottom magnetic films 13 and 14 are each three times or more the gap film, and the film thickness of the gap film is 0.1 占 퐉. The gap film is made of a nonmagnetic electric induction film such as a CrNi alloy, a CuCr alloy, a NiW alloy or a precious metal film.

High resistivity magnetic film 11 and 12 may be provided by sputtering, of NiFe, and Al ₂ 0 ₃ film laminate, NiFe film and the Al ₂ O ₃ film, a mixed layer, or NiFeN and Al ₂ O ₃ mixed layer or NiFeN and Being a multilayer film of a mixed layer of Al ₂ O ₃ , their composition and film configuration are controlled so that the resistivity of the film is larger than that of the top and bottom magnetic films 13, 14.

In the technique of the multilayer or mixed layer used to increase the specific resistance, the saturation magnetic flux density of the film decreases and becomes smaller than that of the top and bottom magnetic films made by the galvanizing method. That is, the saturation magnetic flux densities of the top and bottom magnetic films 13 and 14 in contact with the gap are larger than the high resistivity film.

In order to harden the magnetic field strength of the gap on the floating side, it is better to arrange a highly saturated magnetic flux density film in the gap film adjacency region as in the above embodiment.

The film thickness of the high resistivity film 12 is about 3 mu m.

However, the widths of the high resistivity upper magnetic film 12 and the high resistivity lower magnetic film 11 are larger than about 0.5 to 1 [mu] m than the films of the top and bottom magnetic films 13 and 14, and the widths of the top and bottom magnetic films. Is about 0.5 μm. In addition to the SiO ₂ frame used for galvanizing, a resist frame is used, and after the galvanizing, the resist is removed, and portions other than the top and bottom magnetic films 13 and 14 are protective films (Al ₂ O ₃ and SiO, etc.). And a wide resistivity hard magnetic film are formed on the top and bottom magnetic films and the protective film.

In FIG. 6E, the coil consists of two layers, but one layer may be used.

6A, 6B, 6C, 6D, and 6E are sectional views in the vertical direction of the sliding surface (sliding surface) of the recording head. 6A, 6B, 6C, 6D, and 6E are shown in FIGS. 1A, 1B, 1C, 2A, 2B, 2C, 3A, 3B, 3C, 4, and 5, respectively. Corresponding section.

In Fig. 6A, the upper magnetic film is made of one layer of magnetic film, the lower magnetic film is made of two layers of magnetic film, and the magnetic film adjacent to the gap film 56 of the lower magnetic film is a high resistivity film.

The coil 55 is disposed between the insulating films of the gap film 56, and a magnetic field is generated from the floating side by flowing a current through the coil. In the configuration shown in Fig. 6B, the lower magnetic film is composed of one layer of magnetic film, the upper magnetic film is made of two layers of magnetic film, and one layer of the upper magnetic film adjacent to the gap film 56 is a high saturation magnetic flux density low resistivity film. (51).

The highly saturated magnetic flux density low resistivity film treated by the Gilt method is produced by the galvanizing method and the width of the magnetic film is determined by the track width.

The high saturation magnetic flux density low resistivity film is formed only on the floating side of the upper magnetic film, and the high saturation magnetic flux density low resistivity film seen from the floating side is narrower than the high resistivity magnetic film 52 as shown in FIG.

The configuration shown in FIG. 6B is more suitable for constructing narrow tracks more easily than the configuration shown in FIG. 6A.

In Fig. 6C, the lower magnetic film and the upper magnetic film consist of two layers of magnetic films. The lower magnetic film consists of a high saturation magnetic flux density low resistivity film 51 and the lower magnetic film 54, and the upper magnetic film consists of a high saturation magnetic flux density low resistivity film 51 and a high resistivity magnetic film 52. . The high saturation magnetic flux density low resistivity film 51 and the gap film 56 are produced by the galvanizing method, and the high resistivity magnetic film 52 is produced by the sputtering method.

In the configuration shown in Figs. 6C and 6E, the saturation magnetic flux density low resistivity film is used above and below the gap film 56, and the width seen from the floating side can be narrower than the width of the other magnetic film, and it is a recording head having a narrow track. In this configuration, a highly saturated magnetic flux density film is used around the gap. Therefore, in the case of using a high resistivity magnetic film, the higher the magnetic field strength, the better the high frequency characteristic.

FIG. 6D shows a highly saturated magnetic flux density film 51 which forms the entire magnetic pole above and below the gap film 56.

If only the floating surface is formed to be the narrow track shown in Fig. 4, a process in which only the floating side is formed by the galvanizing method need not be used.

FIG. 6E shows a configuration similar to that of FIG. 6C, wherein a high saturation magnetic flux density low resistivity film is used to contact the gap film 56 and the high resistivity magnetic film 52 is used for the magnetic pole material above and below the gap, The high frequency characteristics are excellent and the track width may be 1.0 μm or less.

6A, 6B, 6C, 6D, and 6E, respectively, the highly saturated magnetic flux density low resistivity film 51 has a higher saturation magnetic flux density than that of the stimulus material used for other parts in each recording head. It is smaller than the resistivity of the material of other magnetic poles.

As a material used for high saturation magnetic flux density low specific resistance, for example, a CoNiFe alloy, a NiFe alloy, or a metal in which a 3d transition metal chemical element is added to these alloys is used.

When produced by the galvanic age jingbeop respect to gaepmak 56, non-magnetic electrically conductive layer, an oxide such as Al ₂ O ₃ or S _i O ₂ produced by a different method, or the nitrogen, carbon or mixtures thereof may also be used .

Examples of the configuration of the magnetic head similar to those of FIGS. 6A, 6B, and 6C are shown in FIGS. 7B, 7C, and 7D.

In FIG. 7A, the magnetic film is provided above and below the gap film 56 and spaced therefrom as the high resistivity magnetic film 52, and the hard magnetic film 54 having a resistivity smaller than that of the high resistivity magnetic film 52 is provided on the magnetic gap side. Is placed on.

The volume of the high resistivity magnetic film 52 is larger than that of the hard magnetic film 54 having low resistivity, and the high frequency characteristic is improved than when the high resistivity film is not used.

In Fig. 7B, the magnetic film in contact with one gap film and the other gap film is formed of narrow tracks, and the magnetic film thereon is composed of a high resistivity magnetic film 52 to provide good narrow track recording head and high frequency characteristics.

In Fig. 7C, the upper magnetic film is composed of three layers, the gap film 56 is made of flat portions, a narrow magnetic film is provided thereon, and a high resistivity magnetic film 52 is formed through the magnetic film.

The low magnetic resistance hard magnetic film 54 is provided on the high resistivity magnetic film 52, and the floating magnetic field strength can be increased by making the saturation magnetic flux density of the hard magnetic film 54 having low specific resistance higher. .

A configuration similar to that of FIG. 7C is the recording head shown in FIG. 7D, wherein the upper magnetic film is composed of three layers, the low resistivity hard magnetic film 54 is provided on the portion adjacent to the gap film 56, and the high resistivity film ( 52) is provided on the portion spaced from the gap film so that the saturation magnetic flux density of the material in the gap vicinity can be higher than that of FIG. 7C and a head having a large magnetic field strength can be provided.

8A shows an end of a magnetic head having a novel configuration of the present invention.

The coil 26 is provided between the lower core 25 and the upper core 27 and is made of 2 μm thick A1 or Cu.

A nonmagnetic insulating material 31 is filled with a material for maintaining insulation in the coil 26 and the cores 25, 27.

The coil 26 is enclosed between the lower core 25 and the upper core 27. The coil 26 is formed of an Al or Cu film having a thickness of 2 μm. The nonmagnetic and insulating material 31 is filled between the coils 26 and the cores 25, 27 to electrically insulate them.

In the magnetic head according to the present invention, the magnetic pole members 32 and 33 and the insulating and nonmagnetic films 10 are inserted between the upper core 27 and the lower core 25 and the magnetic film (or recording gap) is formed by these members. It is characterized by being formed. Another feature is that a magnetic path member 41, 42 is provided between the upper core 27 and the lower core 25. This configuration is not necessary to realize the present invention. The magnetic material 41 and 42 are good at flattening the upper core 27 and are effective in reducing the stress (magnetism) remaining after manufacture. By forming the member together with the magnetic pole members 32 and 33, an increase in manufacturing cost can be suppressed.

8B is a view of the magnetic head seen from the upper core side. It can be seen that the coil 26 is wound spirally. The coil 26 is connected to the electrode 30 (FIG. 8A) in the contact hole 34. In addition, the upper core 27 and the lower core 25 are connected to the magnetic contact hole 35. The magnetic contact hole 35 includes the magnetic material 41 and 42 as mentioned above.

The insulating and nonmagnetic film 10 of the present invention is disposed at the ends of the upper core 25 and the lower core 25, and the configuration of the member seen from the direction α is as shown in Fig. 8C. That is, the narrow magnetic pole members 32 and 33 are sandwiched between the upper core 27 and the lower core 25, and the insulating nonmagnetic film 10 is disposed between the members. The magnetic pole members 32 and 33 are magnetically integrated with the magnetic pole ends of the upper core 27 and the lower core 25, respectively. Therefore, the gap portion is formed by each magnetic pole having a protrusion.

In addition, Fig. 8C coincides with the structure of the magnetic poles seen from the surface of the magnetic head accessing the recording medium, and it can be seen from this figure that the upper magnetic poles are projections, and the projections are formed toward the lower magnetic poles.

Further, from Fig. 8C, all of the magnetic poles are protrusion-shaped, in particular, the width of the protrusion of the upper magnetic pole is almost equal to the width of the protrusion of the lower magnetic pole.

Further, in the case of the present invention, the height of the projection is set to about 0.8 mu m, and the width of the projection is set to about 1 mu m. From this relationship, the height of the projection is smaller than the width of the projection.

The configuration of the present invention can reduce the resistance of the jar to the same as in Japanese Patent Laid-Open No. 7-296328. This will be described with reference to FIG. 9. This figure is sectional drawing of the conventional magnetic head which does not have the magnetic pole members 32 and 33. FIG. The figure shows a magnetic film placed between the lower core 25 and the upper core 27. The write magnetic flux to the medium 61 is induced like the path indicated by β. However, when the width (stimulus width) of the gap on the end side of the upper core 27 is narrowed, the magneto resistance is increased, and in this region 50 where the magneto resistance is increased by this effect, through the path indicated by α Let the magnetic flux flow Thus, the amount of magnetic flux induced in the gap end 51 is reduced, and the required amount of magnetic flux cannot be extracted from the gap (stimulus) end.

On the other hand, in the case of the magnetic head having the magnetic pole members 32 and 33 shown in FIG. 10, there are magnetic pole members 32 and 33 between the upper core 27 and the lower core 25. Therefore, the path α is increased by the thickness of the member (nonmagnetic region is widened). By this effect, even when the magnetic resistance is increased by narrowing the width of the magnetic pole, the amount of magnetic flux flowing through the path α can be suppressed.

The effect can be observed even at a write frequency of 150 MHz or higher. This is an effect obtained by using an insulating nonmagnetic film in the magnetic gap of the present invention. In addition, when an amorphous high electrical resistance magnetic film such as CoToZr is used for the magnetic pole material, the writing frequency can be increased to 200 MHz.

In the structure described in Japanese Patent Laid-Open No. 7-296328, since the trench structure forming the protrusion is made of a low electrical resistance material, eddy currents are likely to occur in this portion, and thus the upper limit of the write frequency is limited to 100 MHz.

As shown in FIG. 8C, the width W1 of the magnetic pole materials 32 and 33 is narrower than the width of the upper magnetic pole 27 and the width of the lower magnetic pole 25. This is based on the magnetic pole having protrusions. It goes without saying that the magnetic flux is concentrated on the projections facing each other by the effect of this shape. Therefore, under the condition of adjusting the magnetic field from the projection to adjust the coil current (write current) to match the magnetic field required for writing, writing does not occur in the region except for the projection (in the region where the gap dimension is widened). Therefore, the track width to be written can almost match the width of the projection.

In addition, in the present invention, only the protrusion may be made of a high electric resistance and a highly saturated magnetic material so that a ferromagnetic field may be generated in a region corresponding to the width of the protrusion. By this effect, even if the magnetic pole has a projection shape, the write track current width can be effectively limited to the width of the projection.

In addition, since the height of the projection is smaller than the width of the projection, the width of the projection can be 2 µm or less by the process described later. By this effect, the writing width of the medium can be easily reduced to 2 mu m or less.

In addition, in the case of the present invention, since the writing width is determined by the width of the projection, it is not necessary to particularly narrow the width of the upper core 27 and the width of the lower core 25 in order to realize high density recording. By this effect, the required magnetic field can be efficiently induced at the magnetic pole ends (gap portions) without increasing the resistance to the magnetic.

In the case of the conventional magnetic head using an insulating nonmagnetic film for the magnetic film, the shape of the magnetic head can be separated into approximately three types as shown in Figs. 11A to 11C when the magnetic pole is viewed from the sliding surface side. That is, they are magnetic heads composed of magnetic poles 27 and 25 having different lengths shown in FIG. 11A, magnetic heads composed of magnetic poles 27 and 25 having the same length shown in FIG. 11B, and magnetic poles 25. It is a magnetic head having protrusions on either magnetic pole. The magnetic head of FIG. 11B is an improvement of one of the magnetic pole structures of FIG. 11A, and has a characteristic that magnetic field leakage is small in the track width direction because the magnetic pole lengths are the same. Therefore, it is advantageous to write on a narrow track width. However, this structure has a drawback that the magnetic pole 25 cannot be used as a shielding layer for the magnetoresistive element. Countermeasures against this drawback are shown in FIG. 11C.

In order to realize a narrow track in the structure shown in Fig. 11C, the width W needs to be narrowed. Therefore, the write magnetic flux can be reduced due to the increase in the magnetic resistance shown in FIG. Therefore, high density information cannot be written with high efficiency.

In the structure according to the present invention, since the width of the writing gap portion is limited to the width of the projection portion, the diffusion of the leakage magnetic field toward the track width direction is small as in the magnetic pole shown in Fig. 11B. Therefore, the structure of the present invention is suitable for high density recording. In addition, since the width of the lower core is wider than the width of the protrusion, there is no problem in that the lower core is also used as a shielding layer for the magnetoresistive effect element.

As described above, the magnetic head structure of the present invention has no problem with high density recording which is a problem of the conventional magnetic head. A manufacturing process of the magnetic head capable of realizing excellent performance will be described with reference to FIG. 12.

This figure is a configuration in which the magnetic pole ends of the magnetic core are viewed from the direction "α" shown in FIG. 8B. This process will be described in order according to the drawings.

In the process shown in Fig. 12A, a magnetic film 73 constituting the lower magnetic pole is deposited on a substrate (base layer or base structure) 74. Ni-Fe alloy is used as a magnetic film. The thickness is set to 2 mu m. On this magnetic film 73, an aluminum film 72 having a thickness of 0.3 mu m is laminated as an insulating nonmagnetic film, and a Ni-Fe magnetic alloy film 72 having a thickness of 0.8 mu m is laminated. After the end of lamination, a resist pattern 71 having a width of the protrusion (corresponding to the write track width) is formed by the photolithography method. This thickness is set to 1 mu m.

Next, in the process shown in FIG. 12B, the magnetic alloy film 72 is etched by an ion milling method using the resist pattern 71 as a mask to form a portion formed by the protrusion of the upper magnetic pole. Thereafter, the alumina film is etched with chlorine and a fluorine-reactive gas, using the resist pattern 71 and the protrusions of the upper magnetic poles formed by etching as a mask. Thereafter, a member formed by the protrusion of the upper magnetic pole is masked and the lower magnetic pole is etched by ion milling to form the protrusion on the lower magnetic pole. At this time, the length of etching is set to 0.8 mu m. The members formed by the protrusions of the upper magnetic poles may be masked to etch the lower magnetic poles by ion milling to form the protrusions having the same length facing each other. This is effective in reducing the spread of the leakage magnetic field in the track width direction, and is an important factor in functionalizing the present invention.

In the process shown in Fig. 12C, after the nonmagnetic insulating film 76 is laminated on the entire surface, the laminated nonmagnetic insulating film is flattened and a part of the member 72 serving as the protrusion is exposed. This process can be realized by applying a flowable thermosetting insulating material (so-called spin-on glass) used in semiconductor manufacturing, mechanically lapping the substrate surface after performing a predetermined heat treatment. The thermal fluidity of the resist can be used.

Exposing the member 72 to be a projection from the insulating layer is a necessary condition for realizing the present invention. If it is a condition which can implement | achieve a necessary condition, the planarization process of an insulating layer is not required. For example, it was confirmed that the film thickness of the insulating material 76 does not affect the present invention even if it exceeds the thickness of the member 72 serving as the projection. In this extreme case (the state where the thickness of the insulating material 76 exceeds the thickness of the member 72 to be the protrusion), an unduration occurs at the upper magnetic pole, and as a result, the protrusion is made into the depressed portion. exist. This structure is described separately.

In the final process shown in Fig. 12D, another member constituting the upper magnetic pole member is formed. Ni-Fe alloy films are used for upper magnetic poles as in conventional magnetic heads.

By the above-described process, the magnetic structure shown in Fig. 8C can be formed. A Ni-Fe alloy film is used as the magnetic pole material in this embodiment, and the magnetic head according to the present invention can be formed using another soft magnetic film through the same process as in this embodiment. In particular, writing in a high frequency state can be realized by using a high electric resistance soft magnetic film. It is a feature of the present invention that the soft magnetic film can be formed by an electroplating method, and by this effect, writing can be performed at a high frequency exceeding that of the conventional magnetic head.

The structure of the upper magnetic pole having the depression will be described next. This structure can be manufactured through a magnetic head manufacturing process including at least the following process. The same will be described with reference to FIG. 12.

As shown in Fig. 12A, after stacking the lower magnetic material 73 on the base structure 74 of the magnetic head, the material 72 for laminating the insulating nonmagnetic film 75 and also forming a part of the upper magnetic pole 72 ) Are stacked.

Next, a resist pattern 71 is formed in a region corresponding to the protrusion of the upper magnetic pole by the lithography method.

Next, as shown in Fig. 12B, a protrusion is formed in the lower magnetic pole by etching the insulating nonmagnetic film and the lower magnetic pole by masking the resist pattern 71 and the member serving as the protrusion of the upper magnetic pole.

Then, as shown in Fig. 12C, after forming the members serving as the protrusions of the upper and lower magnetic poles, the nonmagnetic and insulating films 76 having a thickness exceeding the protrusions are stacked over the regions except for the protrusions. Although the surface of the insulating nonmagnetic film 76 and the surface 72 of the projection part appear to be on the same plane, in this embodiment, the thickness of the insulating nonmagnetic film 76 exceeds the surface 72 of the projection part 72.

Next, a magnetic pole shape of the magnetic head is manufactured for the purpose of forming another member 77 remaining on a part of the upper magnetic pole member shown in FIG. 12D.

FIG. 13 shows a magnetic pole shape of a magnetic head manufactured through a manufacturing process including at least the above process. This figure clearly shows the shape of the upper magnetic pole 77 having a depression in the projection.

It is further explained that this shape was highly efficient in effectively inducing the magnetic flux of the magnetic poles to the protrusions.

The magnetic head according to the invention is formed on a wafer obtained by machining a sintered body of alumina and titanium carbide. Then, after performing a predetermined machining, a mechanical head slider is manufactured.

According to the above process, the width of the projection that determines the writing track width is determined by the width of the resist pattern. However, by making the height of the magnetic pole protrusions of the present invention smaller than the width of the protrusions, a resist pattern having a thick film thickness is not always necessary. From this effect, compared with the resist pattern of a plating mask pattern, patterning resolution is easy and the width | variety of a projection part can be 2 micrometers or less. This feature makes it easy to manufacture a magnetic head used for narrow tracks.

By using the head slider constituted by the magnetic head, high density recording with a track width of 2 m or less can be achieved. This effect makes it possible to realize a high density magnetic recording device of 5 Gb / in ² or more that was considered unrealizable. This is an effect in which magnetic flux can be efficiently induced up to the end of the magnetic pole, and this effect is generated by the end of the magnetic pole being composed of magnetic poles each having protrusions.

(Example 2)

Fig. 14 shows an example in which the high resistivity film shown in the first embodiment is used for the recording head, and the recording head is coupled to the reproduction head shown next.

The giant magnetoresistive film 104 is used for the regeneration head, and the electrode 105 through which current flows is in electrical contact with the giant magnetoresistive film 104.

The lower shielding film 106 is provided through the lower gap film below the electrode 105 and the giant magnetoresistive film 104.

The high resistivity lower magnetic film 108 is disposed as an upper shielding film through the upper gap film on the giant magnetoresistive effect film 104, and the high resistivity lower magnetic film 108 constitutes a part of the lower magnetic pole of the recording head.

By forming a part of the high resistivity lower magnetic film 108 as a high resistivity film, the high frequency characteristic of the recording head can be improved.

The width of the gap film 102 of the recording head is the same as that of the magnetic film disposed above and below the additive, and the highly saturated magnetic flux density films 101 and 103 above and below the gap are materials of higher saturation magnetic flux density than those of the other magnetic pole portions. It is preferable that it consists of.

A high resistivity upper magnetic film 107 having a large width is used for this highly saturated magnetic flux density film 101.

Current flows through the coil 109 of the recording head, and the recording medium 110 is recorded by the magnetic field from the recording head.

In addition to the above, heads of different structures used for the hard magnetic tunnel membrane can be used for the regeneration head.

Fig. 15 is a partial sectional view of a magnetic head (MR sensor) using the spin valve magnetoresistive film of the present invention.

The MR sensor of the present invention has a structure in which a second magnetic layer 22, a soft magnetic first magnetic layer 45, a nonmagnetic metal layer 21, and a ferromagnetic body are attached onto a suitable substrate 43 such as glass or ceramic. .

In the hard magnetic layers 45 and 22, when no magnetic field is applied, their respective magnetization directions intersect at an angle of about 90 degrees.

The magnetization direction of the second magnetic layer 22 is fixed in the same direction as the magnetic field direction of the magnetic medium.

When no magnetic field is applied, the magnetization direction of the first magnetic layer 45 of the mild ferromagnetic material is inclined 90 ° with the magnetic field direction of the second magnetic layer.

Magnetization rotation occurs in the first magnetic layer 45 in accordance with the applied magnetic field.

The first magnetic layer 45, the nonmagnetic metal layer 21, the second magnetic layer 22, and the antiferromagnetic substrate layer 23 described in the embodiment of the present invention are laminated structures shown in Figs. 16, 17, and 18. Can be used, and as the hard magnetic layer 47, Co ₈₂ , Cr ₉ , Pt ₉ , Co ₈₀ , Cr ₈ , Pt ₉ (ZrO ₂ ) ₃ can be used.

16, 17, and 18 show a film structure equivalent to that of the first magnetic layer 45 and the second magnetic layer 22 of the embodiment, and the magnetic field direction is formed to be the same as the article. In this embodiment, before attaching the first magnetic layer 45 of the soft ferromagnetic body, a lower layer 24 such as, for example, Ta, Ru, or CrV is attached onto the substrate 43.

The purpose of attaching the underlayer 24 is to optimize the formation of grain size numbers and later attached layers.

The formation of this layer is very important for obtaining a proper MR effect. The reason is also that a very thin piece piece layer of the nonmagnetic metal layer 21 can be utilized by the formation of the layer.

In addition, in order to minimize the effect of branches, it is desirable to use high electrical resistance in the underlying layer.

The lower layer can be used in a reverse configuration to that described above.

The substrate 43 is made planar with sufficient high electrical resistance, and in the case of a suitable crystal structure, the underlayer 24 is unnecessary.

In the first magnetic layer 45, a method of generating a bias in the longitudinal direction is used to maintain a single domain condition in a direction parallel to this page. As a means for generating the bias in the longitudinal direction, a fixed hard magnetic layer 47 having characteristics of high saturation coercivity, high right angle, and high electrical resistance is used. The fixed hard magnetic layer 47 is in contact with the magnetic domain at the end of the first magnetic layer 45 of soft ferromagnetic material. The magnetization direction of the fixed hard magnetic layer 47 is parallel to this page.

The first antiferromagnetic layer is attached in contact with the magnetic domain at the end of the magnetic layer 45, and a necessary bias occurs in the longitudinal direction.

It is preferable that the antiferromagnetic layer has a blocking temperature quite differently from the blocking temperature of the antiferromagnetic layer 23 used to fix the magnetization direction of the second magnetic layer made of the ferromagnetic material.

Thereafter, it is preferable to attach a high resistance capping layer such as Ta to the entire top of the MR sensor. An electrode 28 is provided, and a circuit is formed between the MR sensor structure as the current source and the detection means.

16 to 18 constitute a magnetoresistive developing element of the present invention formed in place of the respective films of the nonmagnetic metal layer 21, the second magnetic layer 22, and the antiferromagnetic material layer 23 shown in FIG. Each film is shown, and is formed of a radio frequency magnetron sputtering apparatus as follows.

In an Ar atmosphere of 3 mm torr, the following materials were successively deposited on a ceramic substrate 1 mm thick and 3 inches in diameter.

As the sputtering target, tantalum, nickel-20at% ferrum alloy, copper, cobalt, and chromium-50at% manganese are used. In order to produce a chromium-manganese alloy film, an additional element of 1 cm x 1 cm is arranged on top of a chromium-manganese target, and the composition is adjusted by increasing or decreasing the number of chips.

In addition, when the Cd-Fe-Ni layer is made of a hard magnetic film, a chip of 1 cm × 1 cm of nickel and ferum is arranged on the cobalt target to adjust the composition.

By applying high frequency power to the cathode on which each target is placed while closing or opening the shutters arranged for each cathode, plasma is generated in the apparatus to continuously form each layer of the laminated film.

In forming the film, a magnetic field of about 30 Oe is applied to the substrate side by side using anisotropy of one axis of permanent magnets, and the direction of the replacement coupling magnetic field of the chromium-manganese film is in the direction of the applied magnetic field. Induce. One example of the formation conditions described above is shown in Table 1 as follows.

layer Ar gas pressure rf output Forming speed Ta 0.8 m Torr 300 W 0.25 nm / s NiFe 3 m Torr 350 W 0.17 nm / s Cu 3 m Torr 150 W 0.2 nm / s CrMnPt 8 m Torr 350 W 0.5 nm / s Co 3 m Torr 250 W 0.13 nm / s

After forming a laminated film, it heat-processes in a vacuum heat processing apparatus. Heat treatment is performed by raising the temperature from room temperature to a selected temperature, for example, 250 ° C., and then cooling to room temperature after maintaining the temperature for a selected time, for example, 1 hour.

In the whole process of temperature rise, maintenance, and cooling, a magnetic field of 2 to 5 Oe is applied in parallel to the surface of the substrate.

The direction of the magnetic field is parallel to the magnetic field applied by the permanent magnet when the film is formed.

The photoresist production process forms elements on the substrate.

Thereafter, the substrate is processed by a slider and loaded into the magnetic recording apparatus.

FIG. 16 shows a spin valve film having the magnetic laminating body using an antiferromagnetic film of 45 at% chromium-45 at% manganese-10 at% platinum / 81 at% nickel-19 at% iron. Figures compare the characteristics before and after heat treatment of a valve film).

The combined magnetic field due to unidirectional anisotropy is represented by the amount of variation in the right loop of the figure. The combined magnetic field before heat treatment was 300 Oe, and after heat treatment at 250 ° C. for 3 hours, it was 380 Oe. Considering the thickness of the nickel-iron layer and the size of the magnetization, the size is the same as that shown in the prior art.

FIG. 17 is a diagram comparing the characteristics before and after heat treatment of the spin valve film having the magnetic laminate using an antiferromagnetic film / cobalt film of 45 at% chromium-45 at% manganese-10 at% platinum.

The coupling magnetic field before heat treatment is almost the same as that of 300 Oe in FIG. 1. After 3 hours of heat treatment at 250 ° C, the combined magnetic field is 600 Oe, about twice that of the previous one. Considering the thickness of the cobalt layer and the size of the magnetization, it is about twice the size of the coupling magnetic field shown in FIG.

18 is another structural example of the present invention using a magnetic laminate as the spin valve magnetoresistive effect film.

The antiferromagnetic film 30 (45 at% Cr-45 at% Mn-10 at% Pt), the Co layer 111 attached to and in direct contact with the antiferromagnetic film 30, having good magnetic properties Hard magnetic layer 65 composed of soft magnetic layer 112 (81 at% Ni-19 at% Fe), and Co layer 113 in direct contact with nonmagnetic layer 62 (Cu) and generating a large magnetoresistive effect. There is this. The base layer 64 is a base layer for controlling the grain size of the film different from the orientation, and the soft magnetic layer 63 (81 at% Ni-19 at% Fe) is a free layer.

Although the cobalt layer is disposed at the junction of the antiferromagnetic film and the nonmagnetic film, the magnetic properties of the hard magnetic layer 65 are not deteriorated as a fixed layer, and the properties and thickness of the hard magnetic layer 65 are the same as those of the entire layer. It can be maintained without increasing the magnetization amount.

Therefore, the soft magnetic layer 112 preferably has a value smaller than the saturation magnetic flux density of the layers 111 and 113 made of high quality magnetic properties and cobalt, for example, a nickel having a saturation magnetic flux density of 1 Tesla. 81 iron and 19 membranes.

In addition, the saturation magnetic flux density can be reduced to about 0.5 Tesla, for example, NiFe-Cr film is suitable, the NiFe-Cr film is made of NiFe alloy containing 0 to 20 at% Cr, the NiFe alloy 75 to 95% Ni, the remainder consisting of Fe.

(Third Embodiment)

Fig. 19 is an overall view of a magnetic disc unit using the recording reproducing sectional pattern shown in the second embodiment.

The recording / reproducing separable magnetic head 201 adjusts the position on the recording medium 203 by the head positioning frame 202 on the recording medium 203 as the magnetic disk rotated by the motor, and the recording / reproducing separable type. The magnetic head 201 is connected with the reproduction signal processor 204.

The apparatus comprises a DC motor for rotating a magnetic disk, a magnetic head for writing and reading information, a positioning device for supporting the magnetic head and changing its position to a magnetic disk, i.e. an actuator and voice coil motor ( voice coil motor), and an air filter for cleaning the inside of the apparatus.

The actuator consists of a carriage, a rail and a bearing, and the voice coil motor consists of a voice coil and a permanent magnet.

In the figure, eight pieces of magnetic disks, for example, having a large storage capacity, are provided with the same axis of rotation.

The magnetic disk is composed of a good quality surface having a surface uneven R MAX of 100 GPa or less, preferably 50 GPa or less.

The magnetic disk has a magnetic recording layer formed by the vacuum film forming method on the surface of the cured substrate.

The magnetic thin film is used as a magnetic recording layer.

Since the film thickness of the magnetic recording layer formed by the vacuum film forming method is 0.5 µm or less, the surface state of the hard substrate accurately reflects the state of the recording layer.

Therefore, the said hardened board | substrate is used as a board | substrate which has surface uneven | corrugated R MAX of 100 GPa or less.

As such a hardened substrate, glass, chemically strengthened soda-alumina silica glass or ceramic is used as the main component thereof.

In addition, in the case of a magnetic layer made of a metal or an alloy, it is preferable to provide an oxide layer or a nitride layer on the surface or on the surface having an oxide film. Moreover, it is also preferable to use a carbon protective film. By forming the head in this manner, the durability of the magnetic recording layer can be improved, and the impact of the magnetic disk can be prevented when recording and reproducing are performed at extremely low floating capacity or when contacting, starting or stopping.

As a result of measuring the performance of the recording head according to the present invention (overwrite characteristic), excellent recording performance of about -50 dB is provided even in a high frequency region of 40 MHz or more.

According to this embodiment, a high coercivity medium can be sufficiently recorded even in the high frequency region, and based on anisotropic magnetoresistance, a high-speed transmission for transferring data of 15 MB / sec or more, recording frequency of 45 MHz or more, and magnetic disk 4000 rpm or more is possible. A high sensitivity MR sensor having excellent MR effects such as shortening the access time and increasing the recording capacity is provided, so that a magnetic disk unit of 3 Gb / in ² or more is provided as the surface recording density.

According to the present invention described above, at least one portion of the magnetic pole of the recording head is made of a high resistivity film, and a high recording density magnetic storage device is provided because it does not degrade recording performance at high frequencies.

Further, according to the present invention, a magnetic laminate having a sufficient coupling magnetic field and high temperature stability can be provided, so that a reproducing head having sufficient reproducing capacity and low noise characteristics, and a high reliability high density magnetoresistive device can be provided.

Claims (10)

A thin film magnetic head having an upper magnetic film and a lower magnetic film arranged on each opposite side of a nonmagnetic gap film, At least one end of the upper magnetic film or the lower magnetic film is at least a first layer of a magnetic film adjacent to the nonmagnetic gap film, and a second layer of a magnetic film arranged farther than the first layer from the nonmagnetic gap film. The width of the second layer is wider than the width of the first layer to form a convex shape, The resistivity of the second layer is higher than the resistivity of the first layer. The method of claim 1, The saturation magnetic flux density of the second layer is smaller than the saturation magnetic flux density of the first layer. A thin film magnetic head having an upper magnetic film and a lower magnetic film arranged on each opposite side of a nonmagnetic gap film, At least one of the ends of the upper magnetic film and the lower magnetic film is at least a first layer of a magnetic film connected to the nonmagnetic gap film, and a second layer of a magnetic film arranged farther from the first layer from the nonmagnetic gap film. The width of the second layer is wider than the width of the first layer to form a convex shape, The resistivity of the second layer is 50 μΩcm or more, and is higher than the resistivity of the first layer. A recording / reproducing separate magnetic head having an information writing recording head, an information reading reproducing head, and a magnetic shield provided therebetween, The recording head has an upper magnetic film and a lower magnetic film arranged on each opposite side of the nonmagnetic magnetic gap film, At least one end of the upper magnetic film or the lower magnetic film is at least a first layer of a magnetic film adjacent to the nonmagnetic gap film, and a second layer of a magnetic film arranged farther than the first layer from the nonmagnetic gap film. The width of the second layer is wider than the width of the first layer to form a convex shape, And the specific resistance of the second layer is higher than that of the first layer. A recording / reproducing separate magnetic head having an information writing recording head, an information reading reproducing head, and a magnetic shield provided therebetween, The recording head has an upper magnetic film and a lower magnetic film arranged on opposite sides of the nonmagnetic magnetic gap film, At least one of the ends of the upper magnetic film and the lower magnetic film is at least a first layer of a magnetic film adjacent to the nonmagnetic gap film, and a second layer of a magnetic film arranged farther from the first layer from the nonmagnetic gap film. The width of the second layer is wider than the width of the first layer to form a convex shape, The specific resistance of the second layer is 50 μΩcm or more, and is higher than the specific resistance of the first layer. A recording / reproducing separate magnetic head having an information writing recording head, an information reading reproducing head, and a magnetic shield provided therebetween, The recording head has an upper magnetic film and a lower magnetic film arranged on opposite sides of the nonmagnetic magnetic gap film, At least one end of the upper magnetic film or the lower magnetic film includes at least a first layer of a magnetic film adjacent to the nonmagnetic gap film, and a second layer of a magnetic film arranged farther from the first layer from the nonmagnetic gap film. The width of the second layer is wider than the width of the first layer to form a convex shape, The resistivity of the second layer is higher than the resistivity of the first layer, and has a resistivity of 50 μΩcm or more. The reproduction head has a ferromagnetic material and an antiferromagnetic material having uni-directional anisotropism connected to the ferromagnetic material, wherein at least a part of the antiferromagnetic material is made of a Cr-Mn alloy and the antiferromagnetic material of the ferromagnetic material. A recording and reproducing separate magnetic head, wherein at least a portion of the ferromagnetic material is made of Co or a Co alloy. In a magnetic memory device in which a thin film magnetic disk rotates at a speed of 4000 rpm or more at the time of recording / reproducing, and a recording frequency is 45 MHz or more, Rotating means for rotating the thin film magnetic disk, A recording reproduction separating magnetic head provided on the floating slider and having a recording head for writing information and a reproduction head for reading information, and A conveying means for supporting and conveying said floating slider for said membrane magnetic disk, The recording head has an upper magnetic film and a lower magnetic film arranged on opposite sides of the nonmagnetic magnetic gap film, and at least one end of the upper magnetic film or the lower magnetic film is formed of at least one magnetic film adjacent to the nonmagnetic gap film. One layer and a second layer of a magnetic film arranged farther from the nonmagnetic gap film than the first layer, the width of the second layer being wider than the width of the first layer to form a convex shape, The resistivity of the second layer is 50 μΩcm or more, and is higher than the resistivity of the first layer. In a magnetic memory device in which a thin film magnetic disk rotates at a speed of 4000 rpm or more at the time of recording / reproducing, and a recording frequency is 45 MHz or more, Rotating means for rotating the thin film magnetic disk, A recording reproduction separating magnetic head provided on the floating slider and having a recording head for writing information and a reproduction head for reading information, and A conveying means for supporting and conveying said floating slider for said membrane magnetic disk, The recording head has an upper magnetic film and a lower magnetic film arranged on opposite sides of the nonmagnetic magnetic gap film, and at least one end of the upper magnetic film or the lower magnetic film is formed of at least one magnetic film adjacent to the nonmagnetic gap film. One layer and a second layer of a magnetic film arranged farther from the nonmagnetic gap film than the first layer, the width of the second layer being wider than the width of the first layer to form a convex shape, The specific resistance of the second layer is 50 μΩcm or more, higher than the specific resistance of the first layer, The reproduction head has a ferromagnetic material and an anti-ferromagnetic material having a unidirectional anisotropy connected to the ferromagnetic material, at least a part of the anti-ferromagnetic material is made of a Cr-Mn alloy, and at least a portion of the ferromagnetic material connected to the antiferromagnetic material is Magnetic memory device, consisting of Co or Co alloy. In the thin film magnetic head, Upper magnetic film, Lower magnetic film, and A nonmagnetic gap film formed between the upper magnetic film and the lower magnetic film, At least one end of the upper magnetic film or the lower magnetic film includes at least a first layer of a magnetic film adjacent to the nonmagnetic gap film, and a second layer of a magnetic film arranged farther from the first layer from the nonmagnetic gap film. The width of the second layer is wider than the width of the first layer to form a convex shape, The resistivity of the second layer is higher than the resistivity of the first layer. The method of claim 9, The thin film magnetic head of claim 2, wherein the saturation magnetic flux density of the second layer having a high specific resistance is smaller than the saturation magnetic flux density of the first layer.

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