KR100256264B1 - Semiconductor elenent field oxidation layer manufacturing method - Google Patents
Semiconductor elenent field oxidation layer manufacturing method Download PDFInfo
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- KR100256264B1 KR100256264B1 KR1019930030785A KR930030785A KR100256264B1 KR 100256264 B1 KR100256264 B1 KR 100256264B1 KR 1019930030785 A KR1019930030785 A KR 1019930030785A KR 930030785 A KR930030785 A KR 930030785A KR 100256264 B1 KR100256264 B1 KR 100256264B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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Abstract
Description
제1a도 및 제1b도는 종래의 필드산화막 형성 공정도.1A and 1B are conventional field oxide film formation process charts.
제2a도 내지 제2c도는 본 발명의 일실시예에 따른 필드산화막 형성 공정을 나타내는 단면도.2a to 2c are cross-sectional views showing a field oxide film forming process according to an embodiment of the present invention.
〈도면의 주요부분에 대한 부호의 설명〉<Explanation of symbols for main parts of drawing>
1 : 반도체 기판 2 : 패드 산화막1 semiconductor substrate 2 pad oxide film
3 : 질화막 4 : 필드산화막3: nitride film 4: field oxide film
본 발명은 반도체 소자 제조공정에서 널리 사용되는 LOCOS(LOCal Oxidation of Silicon) 방식의 소자분리막 형성이나 기타 변형된 LOCOS 소자분리막 공정에 사용되는 반도체 소자의 필드산화막 형성 방법에 관한 것이다.The present invention relates to a field oxide film formation method of a semiconductor device used in the formation of a LOCOS (LOCal Oxidation of Silicon) method widely used in a semiconductor device manufacturing process or other modified LOCOS device isolation process.
종래의 LOCOS 공정에서는 제1a도에 도시된 바와 같이 반도체 기판(1)상에 패드 산화막(2), 질화막(3)을 차례로 형성하고 마스크를 사용하여 소정부위의 상기 질화막(3)을 식각하여 필드영역을 디파인(define)한 후(일반적으로 아이솔레이션 식각공정이라 함). 제1b도에 도시된 바와 같이 산화공정을 통하여 필드산화막(4)을 형성하였다.In the conventional LOCOS process, as shown in FIG. 1A, a pad oxide film 2 and a nitride film 3 are sequentially formed on the semiconductor substrate 1, and the nitride film 3 at a predetermined portion is etched by using a mask. After the area is defined (generally called an isolation etch process). As shown in FIG. 1B, the field oxide film 4 was formed through an oxidation process.
그리고, 소자가 점차 고집적화됨에 따라 소자분리공간이 점점 좁하지면서 산화시 패드 산화막을 통해 산호가 측면 확산되어 필드산화막의 가장자리에 버즈비크(bird's beak)가 길게 형성되어 활성영역의 손실을 가져오는 문제점이 있어 이러한 문제점을 해결하기 위하여 많은 노력이 쏟아지고 있다.In addition, as the device becomes increasingly integrated, the device isolation space becomes narrower, and corals are laterally diffused through the pad oxide film during oxidation, so that a bird's beak is formed at the edge of the field oxide film, resulting in loss of the active region. There is a lot of effort to solve this problem.
그 중에서 고온에서 필드산화막을 형성할 경우 버즈비크의 길이를 많이 줄일 수 있는데, 이 경우 제1b도와 같이 질화막이 산화도중에 분자구조가 조밀해지면서 막 자체가 오므라드는 조밀화(densification) 현상이 발생하여 필드영역이 400∼500Å(도면의 A) 가량 넓어지게 된다.Among them, when the field oxide film is formed at a high temperature, the length of the burj beak can be greatly reduced.In this case, as the nitride film becomes densified during oxidation, the densification phenomenon occurs due to the densification of the film itself. The area is widened by about 400 to 500 mm (A in the drawing).
때문에 활성영역의 손실이 발생하고, 스트레스(stress)로 인하여 활성영역의 소자 특성저하가 야기되며, 습식산화(Wet oxidation) 분위기에서 질화막이 변형되면서 나오는 H2, N2등이 O2와 결합하여 NH3가스가 되면서 실리콘 기판을 질화시켜 쿠이의 효과(Kooi's effect)를 야기시키거나, 질화막이 위로 들뜨면서 버즈비크의 생성이 용이하게 되는 등의 문제점이 발생한다.As a result, loss of the active region occurs, and deterioration of device characteristics of the active region occurs due to stress, and H 2 , N 2, etc., which are released as the nitride film is deformed in a wet oxidation atmosphere are combined with O 2. As the NH 3 gas becomes a nitride, the silicon substrate is nitrided to cause Koi's effect, or the nitride film is lifted up, thereby making it easy to generate a buzz bee.
상기 문제점을 해결하기 위하여 본 발명은 질화막을 증착한후 아이솔레이션시키기 전에 이 질화막을 미리 조밀화 시키므로써 이후의 필드산화막 형성을 위한 산화공정에서는 질화막이 조밀화되는 것을 방지하는 반도체 소자의 필드산화막 형성 방법을 제공함을 그 목적으로 한다.In order to solve the above problems, the present invention provides a method of forming a field oxide film of a semiconductor device which prevents densification of the nitride film in the subsequent oxidation process for forming the field oxide film by densifying the nitride film before the isolation after the deposition of the nitride film. For that purpose.
상기 목적을 달성하기 위하여 본 발명은, 질화막을 산화마스크로 사용하는 LOCOS 공정의 필드산화막 형성 방법에 있어서, 반도체기판 상부에 질화막을 증착하는 단계; 상기 질화막을 후속 필드산화 공정시의 온도로 열처리하여 상기 질화막의 분자구조를 조밀화하는 단계; 상기 질화막을 식각하여 소자분리영역을 오픈시키는 단계; 및 상기 필드산화 공정에 의해 필드산화막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.In order to achieve the above object, the present invention provides a field oxide film forming method of a LOCOS process using a nitride film as an oxide mask, comprising: depositing a nitride film on an upper surface of a semiconductor substrate; Heat treating the nitride film to a temperature during a subsequent field oxidation process to densify the molecular structure of the nitride film; Etching the nitride film to open a device isolation region; And forming a field oxide film by the field oxidation process.
이하, 첨부된 도면 제2a도 내지 제2c도를 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings 2A to 2C.
먼저, 제2a도와 같이 반도체 기판(1)상에 건식 또는 습식산화로 패드산화막(2)을 50∼300Å 정도 형성한 후 계속해서 질화막(3)을 화학기상증착 방식으로 약 1000∼3000Å 증착한다.First, as shown in FIG. 2A, the pad oxide film 2 is formed on the semiconductor substrate 1 by dry or wet oxidation, and then the nitride film 3 is subsequently deposited by chemical vapor deposition.
이어서, 이후에 실행될 필드산화시의 온도와 유사한 온도인 1000∼1200℃의 온도 및 O2, N2, NH3, Ar 또는 희석된 O2분위기에서 열처리하여 미리 질화막(3)의 분자구조를 조밀화(densification)하고, 온도를 서서히 낮추면서 어닐링(annealing)을 실시하여 질화막(3)의 스트레스를 느슨하게 풀어 준다.Subsequently, the molecular structure of the nitride film 3 is densified in advance by heat treatment in a temperature of 1000 to 1200 ° C., which is similar to the temperature at the time of field oxidation to be subsequently performed, and in an O 2 , N 2 , NH 3 , Ar, or diluted O 2 atmosphere. (densification) and the annealing (annealing) while gradually lowering the temperature to loosen the stress of the nitride film (3).
계속해서 제2b도와 같이 마스크를 사용하여 소정부위의 상기 질화막(3)을 식각하여 필드영역을 디파인하는 아이솔레이션 식각공정을 수행한다.Subsequently, as illustrated in FIG. 2B, an isolation etching process is performed to etch the nitride film 3 at a predetermined portion by using a mask to define a field region.
이후 제2c도와 같이 1000∼1200℃의 온도에서 3000∼6000Å 두께의 필드산화막(4)을 형성하는데, 이때의 질화막(3)은 이미 그 분자 구조가 조밀해져 있으므로 필드 산화 공정중에 더 이상 질화막(3)은 조밀화되지 않는다.Thereafter, as shown in FIG. 2C, a field oxide film 4 having a thickness of 3000 to 6000 에서 is formed at a temperature of 1000 to 1200 DEG C. In this case, since the molecular structure is already dense, the nitride film 3 is no longer formed during the field oxidation process. ) Is not densified.
따라서, 활성영역의 손실이 발생하지 않고 양호한 필드산화막을 형성할 수 있다.Therefore, a good field oxide film can be formed without loss of the active region.
본 발명은 변형된 모든 LOCOS 공정에 적용할 수 있는데, 그중에 폴리실리콘층을 완충구조로 사용하는 PBL(poly buffered LOCOS) 공정이라든가 스페이서를 이용한 LOCOS 공정등에 모두 적용가능하다.The present invention can be applied to all modified LOCOS processes, among which, a poly buffered LOCOS (PBL) process using a polysilicon layer as a buffer structure or a LOCOS process using a spacer is applicable.
상기 설명과 같이 본 발명은 질화막의 선행 조밀화로 활성영역의 손실을 방지하며, 질화막의 들뜸을 방지하여 필드산화막의 버즈비크를 감소시키고 스트레스로 인한 소자 활성화 지역의 특성 저하를 방지하는 효과가 있다.As described above, the present invention has the effect of preventing the loss of the active region by prior densification of the nitride film, preventing the lifting of the nitride film, reducing the burj beak of the field oxide film, and preventing the deterioration of the characteristics of the device activation region due to stress.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019930030785A KR100256264B1 (en) | 1993-12-29 | 1993-12-29 | Semiconductor elenent field oxidation layer manufacturing method |
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| KR1019930030785A KR100256264B1 (en) | 1993-12-29 | 1993-12-29 | Semiconductor elenent field oxidation layer manufacturing method |
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| KR100256264B1 true KR100256264B1 (en) | 2000-05-15 |
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