KR100248628B1 - Method and apparatus for forming pattern of semiconductor device - Google Patents

Abstract

The present invention relates to a method and apparatus for forming a pattern of a semiconductor device which prevents the damage of the photoresist pattern by the surface tension of the cleaning solution by spraying a high temperature cleaning solution on the photoresist pattern to increase the strength of the photoresist. In order to prevent the damage caused by the photoresist pattern and the surface tension between the patterns, a method using a small surface tension among the cleaning solutions or lowering the surface tension by increasing the temperature of the cleaning solution has been used. Increasing the temperature of the cleaning solution has a problem that the effect of the temperature is relatively small to prevent the damage of the pattern of the wafer due to the surface tension bar bar, the present invention is sprayed with a high temperature cleaning solution on the wafer during the cleaning operation contained in the photosensitive film Increase the strength of the photoresist film by washing and baking to remove the solvent. It is possible to prevent the damage of the pattern due to the collapse of the pattern. Accordingly, it is possible to use the cleaning solution at room temperature when drying the cleaning solution, thereby reducing the activation of the reaction between the solution and the surface of the substrate, thereby creating water spots. A method and apparatus for forming a pattern of a semiconductor device having an advantage of blocking and preventing damage to a surface of a wafer to form a fine, high aspect ratio pattern.

Description

Pattern forming method and apparatus of semiconductor device

The present invention relates to a method and a device for forming a pattern of a semiconductor device. More particularly, a semiconductor for preventing damage to the photoresist pattern due to surface tension of the cleaning solution by increasing the strength of the photoresist by spraying a high temperature cleaning solution onto the photoresist pattern. A method and apparatus for forming a pattern of a device are provided.

In general, as illustrated in FIG. 1, the photoresist pattern 3 formed on the wafer 1 may have a smaller size or an aspect ratio between the coating thickness (a) and the photoresist pattern width (b). If it becomes larger, it is affected by the surface tension caused by the washing solution 5 after photosensitization. This surface tension is inclined in one direction by acting between the photoresist pattern and the pattern to push the photoresist pattern outward.

The pattern formation process of the conventional semiconductor device as described above is as follows.

First, a high temperature bake step for removing the hydroxyl group (OH-) attached to the wafer surface, a step of depositing an adhesion promoter such as Hexa Methyl Di Silazane (HMDS) for applying the photoresist film, and a photoresist film Cooling the wafer to stabilize the wafer surface temperature, applying a solution of the photosensitive film in a rotational manner in order to stabilize the wafer surface temperature, and a low temperature baking step of evaporating the solvent of the photosensitive film to solidify the temperature of the photosensitive film. Cooling the wafer, exposing the pattern with an exposure apparatus to form a desired pattern, and posts for activating a factor that affects development, such as a photo active compound. Performing a post exoose bake step, cooling the wafer, and performing a selective developing operation according to the exposure or not; And the solution washed (Rinse) step for removing, in order to remove the solvent component present in the photosensitive film by baking at a high temperature consists of a hard bake step to form a pattern.

At this time, the washing solution used in the washing step of removing the developing solution is using a pure water or using a washing solution mixed with 1-t-butyl alcohol (t-butyl alcohol) 1: 1 in pure water.

In the pattern formation process of the wafer as described above, in order to minimize the surface tension between the photoresist pattern and the pattern by the cleaning solution, the surface tension of the cleaning solution is used or the surface tension is lowered by increasing the temperature of the cleaning solution. Although the method has been used, there is a limitation in selecting a cleaning solution, and the effect of temperature is relatively small when raising the temperature of the cleaning solution, and thus there is a problem in that the damage of the wafer pattern due to the surface tension cannot be prevented.

In addition, when the wafer is dried with a high temperature cleaning solution, a reaction between the solution and the surface of the substrate is activated to generate water spots, thereby causing damage to the surface of the wafer.

An object of the present invention is to increase the strength of the photosensitive film by cleaning and baking so that the solvent contained in the photosensitive film is extracted by spraying a high temperature cleaning solution on the wafer during the cleaning operation for washing the developing solution in the pattern formation process of the wafer. It is possible to prevent the damage of the pattern due to the collapse of the pattern. Accordingly, it is possible to use the cleaning solution at room temperature when drying the cleaning solution, thereby reducing the activation of the reaction between the solution and the surface of the substrate, thereby creating water spots. Disclosed is a method and apparatus for forming a pattern of a semiconductor device which prevents damage to a surface of a wafer.

Therefore, the present invention, in order to achieve the above object, the thickness of the photosensitive film is changed in accordance with the temperature of the photosensitive film, the step of cooling the wafer to stabilize the wafer surface temperature, the step of applying a solution of the photosensitive film in a rotational manner, A low temperature bake step of evaporating and solidifying the solvent of the photoresist film, a step of exposing the pattern with an exposure apparatus to form a desired pattern, and a post-exo bake for activating a factor affecting development such as a photosensitive composite material And performing a selective developing operation according to the exposure, and supplying a high temperature cleaning solution onto the wafer to remove the developing solution, curing the photosensitive film, and washing the wafer, using a cleaning solution at room temperature. Drying the wafer and removing the solvent component present in the photosensitive film at a high temperature. It is characterized by consisting of a hard bake step of baking and forming a pattern.

1 is a block diagram showing the surface tension of the cleaning solution in a general photosensitive film pattern,

2 is a block diagram showing an injector of the present invention,

3 is a block diagram showing a plate rotation chuck of the present invention.

Explanation of symbols on the main parts of the drawings

1: wafer, 3: photosensitive film pattern,

5, 111: washing solution, 101: sprayer,

103: rotary chuck, 105: injection nozzle,

107: inlet pipe, 109, 115: hot wire,

113: plate rotation chuck, 117: plate,

119: support rod.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

Figure 2 is a block diagram showing an apparatus for supplying a high temperature cleaning solution of the present invention, Figure 3 is a block diagram showing a wafer drying apparatus of the present invention.

The process of forming the photoresist pattern on the wafer is first performed by a high temperature bake step to remove hydroxyl groups attached to the wafer surface before coating the photoresist on the wafer.

After the high temperature bake step, the adhesion promoter such as HMDS is deposited to adsorb the photoresist film on the wafer, and the thickness of the photoresist film is changed according to the temperature during coating of the photoresist film, and thus the cooling step is performed to stabilize the surface temperature of the wafer.

The step of applying a photosensitive film in a rotational manner on the wafer processed as described above is carried out.

In order to evaporate the solvent contained in the photosensitive film and transform it into a solid component, a soft baking step of baking at low temperature and a cooling step of cooling such a wafer are sequentially performed.

Subsequently, a step of exposing the pattern with an exposure apparatus is performed to form a desired photoresist pattern on the wafer.

The exposed wafers are subjected to a post-ex baking process for activating a factor that affects development, such as a photosensitive synthetic material, followed by a cooling step, and then a developing step of selectively developing according to exposure or not. .

Since the developing solution used in the developing operation remains on the surface of the wafer, a washing step for washing it is performed.

At this time, the photoresist pattern is hardened and baked by curing the photoresist with a high temperature cleaning solution on the surface of the wafer in the washing step.

After the pattern curing operation, a drying step of drying the wafer while maintaining the cleaning solution at room temperature is performed.

The apparatus for drying the wafer by supplying a high temperature cleaning solution to the surface of the wafer to cure the photoresist and at the same time maintaining the cleaning solution at room temperature, as shown in FIG. A spray injector (101) formed with an inlet pipe (107) which forms a rotary chuck (103) which rotates with a spray nozzle (105) at one end and is provided with a cleaning solution (111) at the other end thereof so as to be positioned at an upper end corresponding thereto. It is composed of

At this time, the heating wire 109 is wound around the inlet pipe 107 of the injector 101 to release heat according to the supply of power to increase the temperature of the washing solution 111 flowing through the inlet pipe 107.

Therefore, the wafer 1 seated on the rotary chuck 103 with the cleaning solution 111 whose temperature is raised by the heating wire 109 formed on the outer circumference of the inlet pipe 107 of the injector 101 through the injection nozzle 105. ) The pattern formed on the surface of the wafer 1 is cured by spraying on the upper surface.

After the pattern is cured, the drying operation of the wafer 1 is performed by spraying the washing solution 111 maintained at room temperature on the wafer surface.

At this time, the rotating chuck 103 is rotated at a constant speed so that the cleaning solution 111 is uniformly sprayed onto the wafer 1.

In addition, another apparatus for drying a wafer by supplying a high temperature cleaning solution to the surface of the wafer to cure the photoresist and supplying a room temperature cleaning solution to the wafer, as shown in FIG. A plate rotating chuck 113 is formed to form a plate 117 containing the solution 111 and is connected to the bottom of the plate 117 to form a supporting rod 119 for rotating the plate 117 at a constant speed.

In the state where the wafer 1 is seated on the upper surface of the plate 117, the cleaning solution 111 stored in the plate 117 is heated by the heating wire 115 to maintain a high temperature. The photosensitive film formed on the surface is cured.

In addition, after the curing operation is performed, the operation of drying the wafer 1 while maintaining the washing solution 111 in the plate 117 at room temperature is subsequently performed.

At this time, by rotating the plate 117 containing the cleaning solution 111 at a constant speed so that the cleaning solution 111 evenly acts on the wafer (1).

After the drying step, a process of forming the photosensitive film pattern of the wafer is completed by performing a hard bake step in which a pattern is formed by baking at a high temperature to remove the solvent component present in the photosensitive film.

As described above, the present invention is sprayed with a high temperature cleaning solution on the wafer during the cleaning operation to wash and bake so that the solvent contained in the photoresist film is extracted, thereby increasing the strength of the photoresist film, thereby damaging the pattern due to collapse of the photoresist pattern. It is possible to use the cleaning solution at room temperature when drying the cleaning solution, thereby lowering the activation of the reaction between the solution and the substrate surface, thereby preventing the formation of water spots and damaging the surface of the wafer. There is an advantage in that it is possible to form a fine, high aspect ratio pattern by preventing the.

Claims (4)

Cooling the wafer to stabilize the wafer surface temperature since the thickness of the photosensitive film is changed according to the temperature of the photosensitive film; Coating the photosensitive film in a solution state by a rotation method; A low temperature baking step of evaporating and solidifying the solvent of the photosensitive film; Exposing the pattern with an exposure apparatus to form a desired pattern; A post-exo bake step for activating a factor affecting development, such as a photosensitive synthetic material; Performing a selective developing operation depending on the exposure; Supplying a high temperature cleaning solution onto the wafer to remove the developing solution, curing the photosensitive film, and cleaning the wafer; Drying the wafer with a cleaning solution at room temperature; And a hard bake step in which a pattern is formed by baking at high temperature to remove the solvent component present in the photosensitive film. A wafer; A rotary chuck which rotates at a constant speed by mounting the wafer on an upper surface; The injection nozzle corresponding to the wafer is formed at one end, and the other end is composed of an injector composed of an inlet pipe for supplying the cleaning solution. The temperature of the cleaning solution sprayed on the wafer is adjusted to a high temperature and a low temperature for each step. Patterning apparatus for a semiconductor device, characterized in that the wafer is cured and dried. The method according to claim 2, The inlet pipe is a pattern forming apparatus for a semiconductor device, characterized in that the heating wire is wound around the outer periphery to heat the cleaning solution at high temperature and room temperature. A wafer; A plate on which the wafer is seated in a state in which a heating wire is wired inside and a cleaning solution is contained in an upper surface thereof; Formed on the bottom of the plate consisting of a plate rotating chuck consisting of a support rod to rotate at a constant speed to adjust the temperature of the cleaning solution to the appropriate high temperature and room temperature state for each step of the semiconductor device, characterized in that for curing and drying the wafer Pattern Forming Device.

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