JPWO2017056526A1 - 分析装置及び分析方法 - Google Patents
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Abstract
Description
図1〜図18を用いて、第1実施形態の分析装置及び分析方法を説明する。
図1〜図5を用いて、基板の反応領域を説明する。
図6は実施形態の分析装置1を示す構成図である。図7は反応領域65と光ピックアップ20の検出位置PPUとの位置関係、及び、FG(Frequency Generator)素子11とターンテーブル回転検出センサ5の検出位置PFGとの位置関係を説明するための模式的な上面図である。
図8A及び図8Bは、分析装置1による微粒子82の分析方法を説明するためのフローチャートである。図9は、光ピックアップ20の受光レベル検出位置に対応する半径位置Pnと反応領域65a〜65hとの位置関係を説明するための模式的な上面図である。
図19〜図28を用いて、第2実施形態の分析装置及び分析方法を説明する。なお、説明をわかりやすくするために、第1実施形態と同じ構成部には同じ符号を付す。
図19及び図20を用いて、基板の反応領域を説明する。図19(a)は基板60に反応領域165(図19(c)に図示)を形成するための抗原捕捉ユニット150の模式的な上面図である。図19(b)は図19(a)のC−Cにおける模式的な断面図である。図19(c)はカートリッジ170が基板60に対して着脱可能であることを説明するための模式的な断面図である。図19(c)は図19(b)に対応している。
第2実施形態の分析装置は第1実施形態の分析装置1と共通である。第2実施形態では、基板60は、その中心Caがターンテーブル10の回転軸C10上に位置するように、クランパ2とターンテーブル10とによってターンテーブル10上に保持される。
第2実施形態の分析方法は、第1実施形態の分析方法と比較して、基本的な手順は共通であり、反応領域の位置が異なることに起因して処理内容が相違する。
Claims (7)
- 分析対象である微粒子を捕捉するための複数の反応領域を有する基板が保持されるターンテーブルと、
前記ターンテーブルを回転させるターンテーブル駆動部と、
前記ターンテーブル駆動部を制御するターンテーブル駆動回路と、
前記ターンテーブルの回転軸に直交する方向に沿って駆動され、前記反応領域にレーザ光を照射して前記反応領域からの反射光を受光する光ピックアップと、
前記光ピックアップの駆動を制御する光ピックアップ駆動回路と、
前記ターンテーブル駆動回路、及び、前記光ピックアップ駆動回路を制御する制御部と、
を備え、
前記複数の反応領域は、前記基板の中心から異なる位置に形成されており、
前記基板は、前記基板の中心が前記ターンテーブルの回転軸上に位置するように前記ターンテーブルに保持され、
前記光ピックアップ駆動回路は、前記ターンテーブルの回転軸に直交する方向における位置を検出して位置情報信号を生成し、
前記光ピックアップは、前記反応領域からの反射光の受光レベルを検出して受光レベル信号を生成し、
前記制御部は、前記ターンテーブル駆動回路を制御して前記基板を回転させ、前記光ピックアップ駆動回路を制御して前記光ピックアップを前記ターンテーブルの回転軸に直交する方向に沿って駆動させ、前記位置情報信号及び前記受光レベル信号に基づいて前記反応領域を特定する、
ことを特徴とする分析装置。 - 前記基板は、前記複数の反応領域が同一円周上に配置され、前記円周の中心が前記ターンテーブルの回転軸とは異なる位置になるように前記ターンテーブルに保持されることを特徴とする請求項1に記載の分析装置。
- 前記複数の反応領域は、前記基板の内周部から外周部に向かってスパイラル状に配置されていることを特徴とする請求項1に記載の分析装置。
- 前記制御部は、前記受光レベル信号から微粒子パルス信号群を抽出し、前記微粒子パルス信号群から前記微粒子を検出することを特徴とする請求項1に記載の分析装置。
- 前記ターンテーブルの回転を検出してターンテーブル回転検出信号を生成するターンテーブル回転検出センサと、
前記ターンテーブル回転検出信号を分周させて前記基板の回転周期に同期する同期信号を生成する分周回路と、
をさらに備え、
前記制御部は、前記微粒子パルス信号群から包絡線パルス信号を生成し、前記包絡線パルス信号、前記ターンテーブル回転検出信号、及び前記同期信号から、前記包絡線パルス信号と同期する測定ゲート信号を生成する、
ことを特徴とする請求項4に記載の分析装置。 - 前記制御部は、前記光ピックアップの受光レベル検出位置に応じて前記反応領域毎に、前記受光レベル信号から前記測定ゲート信号により前記微粒子パルス信号群を抽出することを特徴とする請求項5に記載の分析装置。
- 分析対象である微粒子を捕捉するための複数の反応領域が中心から異なる位置に形成されている基板を、前記基板の中心が前記基板の回転軸となるように回転させ、
前記基板の回転軸に直交する方向における所定の位置から、前記反応領域にレーザ光を照射して前記反応領域からの反射光を受光し、
前記所定の位置の位置情報及び前記反射光の受光レベルに基づいて前記反応領域を特定する、
ことを特徴とする分析方法。
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