JPWO2010087195A1 - Positive photosensitive insulating resin composition and pattern forming method using the same - Google Patents

Abstract

A photosensitive insulating resin composition comprising a polymer, a photosensitizer, and an amide derivative represented by the following general formula (1). (In Formula (1), R1 represents a divalent alkyl group, R2 represents a hydrocarbon group having 1 to 10 carbon atoms, and R3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.)

Description

The present invention relates to a photosensitive insulating resin composition and a pattern forming method, and more particularly to a positive photosensitive resin composition and a pattern forming method applicable to an interlayer insulating film, a surface protective film, and the like of a semiconductor device.
The present application claims priority based on Japanese Patent Application No. 2009-018193 filed in Japan on January 29, 2009, the contents of which are incorporated herein by reference.

  Conventionally, polyimide resins having excellent film characteristics such as heat resistance, mechanical characteristics, and electrical characteristics have been used for interlayer insulating films and surface protective films of semiconductor devices. However, when a non-photosensitive polyimide resin is used as an interlayer insulating film or the like, an etching process, a resist removal process, and the like using a positive resist in the pattern forming process are required, and the manufacturing process becomes complicated. For this reason, examination of the photosensitive polyimide resin which has the outstanding photosensitivity has been made | formed. As such a photosensitive polyimide resin composition, the positive photosensitive resin composition containing the polyamic acid described in patent document 1, an aromatic bisazide type compound, and an amine compound is mentioned. However, an organic solvent such as N-methyl-2-pyrrolidone or ethanol is required in the development step in the pattern forming process of the photosensitive polyimide resin. For this reason, it has been a problem in terms of safety and environmental impact.

  Therefore, in recent years, a positive photosensitive resin composition has been developed as a pattern forming material that can be developed using an alkaline aqueous solution such as a tetramethylammonium hydroxide (TMAH) aqueous solution used in a fine pattern forming process of semiconductors. ing. For example, Patent Document 2 reports a non-chemically amplified positive photosensitive resin composition containing a polybenzoxazole precursor and a diazoquinone compound that is a photosensitive agent. Non-Patent Document 1 reports a non-chemically amplified positive photosensitive resin composition containing a polybenzoxazole precursor and 1,2-naphthoquinonediazide-5-sulfonic acid ester. Non-Patent Document 2 reports a chemically amplified positive photosensitive resin composition containing a polybenzoxazole precursor protected with an acid-decomposable group and a photoacid generator.

  Such a photosensitive insulating resin composition changes its structure by heat treatment, and a benzoxazole ring is formed. For this reason, the thing excellent in heat resistance and an electrical property is obtained. For example, in the polybenzoxazole precursor described in Non-Patent Document 1, a benzoxazole ring is formed by heat treatment after alkali development, as shown in the following reaction formula A1 and reaction formula A2. Since the benzoxazole ring has a stable structure, interlayer insulating films and surface protective films using a photosensitive composition containing this polybenzoxazole precursor have excellent film properties such as heat resistance, mechanical properties, and electrical properties. Become a film.

  In recent years, in the field of semiconductor device manufacturing, higher density and higher integration of devices, miniaturization of wiring patterns, and the like are required. In connection with this, the request | requirement with respect to the photosensitive insulating resin composition especially used for an interlayer insulation film, a surface protective film, etc. is becoming severer. However, the positive photosensitive resin compositions described in the above-mentioned documents are not fully satisfactory from the viewpoint of resolution. One of the factors that cause poor resolution is that the contrast is low and that the formed fine resin pattern does not adhere sufficiently to the substrate.

  As described above, while maintaining the conventional film characteristics, alkali development is possible, high resolution is obtained, and the fine resin pattern formed is not easily peeled off from the substrate. Development of a photosensitive insulating resin composition is awaited.

Japanese Patent Publication No. 3-36861 Japanese Examined Patent Publication No. 1-46862

M.M. Ueda et al., Journal of Photopolymer Science and Technology, Vol. 16, No. 2, pages 237-242 (2003). K. Ebara et al., Journal of Photopolymer Science and Technology, Vol. 16, No. 2, pp. 287-292 (2003)

  The present invention has been made to solve the above-mentioned problems. The first object of the present invention is excellent in film properties such as heat resistance, mechanical properties and electrical properties, alkali development is possible, and high resolution is obtained. Another object of the present invention is to provide a photosensitive insulating resin composition in which the formed resin pattern is excellent in substrate adhesion. The second object of the present invention is to provide a pattern forming method using a photosensitive insulating resin composition.

  As a result of investigations to achieve the above object, the present inventors have found that a photosensitive insulating resin composition comprising a photosensitive insulating resin composition containing a polymer and a photosensitizer and further containing an amide derivative having a specific structure. If present, the present invention was completed by finding that it can be developed with an alkaline aqueous solution, high resolution is obtained, and excellent adhesion to the substrate.

  That is, a first aspect of the present invention is a photosensitive insulating resin composition comprising a polymer, a photosensitizer, and an amide derivative represented by the following general formula (1).

（式（１）中、Ｒ^１は、２価のアルキル基であり、Ｒ^２は、炭素数１〜１０の炭化水素基であり、Ｒ^３は、水素原子又は炭素数１〜４のアルキル基を表す。）

(In formula (1), R ¹ is a divalent alkyl group, R ² is a hydrocarbon group having 1 to 10 carbon atoms, and R ³ is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. Represents.)

  In the present invention, the polymer is preferably a polymer including one or more repeating structural units represented by the general formula (2).

（式（２）中、Ｒ^４は、水素原子又はメチル基を表し、Ｒ^５は、水素原子、又は酸により分解する基を表し、Ｒ^６〜Ｒ^９は、それぞれ独立に、水素原子、ハロゲン原子又は炭素数１〜４のアルキル基を表す。）

(In formula (2), R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a hydrogen atom or a group that decomposes with an acid, and R ^{6 to} R ⁹ each independently represents a hydrogen atom, a halogen atom, or a halogen atom. Represents an atom or an alkyl group having 1 to 4 carbon atoms.)

  Further, in the present invention, the polymer is an alkali-soluble polymer, and the polymer is represented by one or more repeating structural units represented by the general formula (2) and the following general formula (3). A polymer containing one or more repeating structural units is preferred.

（式（３）中、Ｒ^１０は、水素原子又はメチル基を表し、Ｒ^１１は、ラクトン構造を有する有機基を表す。）

(In formula (3), R ¹⁰ represents a hydrogen atom or a methyl group, and R ¹¹ represents an organic group having a lactone structure.)

  Furthermore, the present invention preferably includes a dissolution inhibitor.

  The dissolution inhibitor is preferably a compound represented by the following general formula (4) or the following general formula (5).

（式（４）中、Ｒ^１２及びＲ^１３は、酸により分解する基を表し、Ｒ^１４及びＲ^１５は炭素数１〜１０の直鎖状、分枝状あるいは環状のアルキル基又は芳香族炭化水素基を表し、Ｒ^１６は直結合、−Ｃ（ＣＦ_３）_２−、−ＳＯ_２−、−ＣＯ−、−Ｏ−又は２価の炭化水素基を表す。）

(In the formula (4), R ¹² and R ¹³ represent groups that are decomposed by an acid, and R ¹⁴ and R ¹⁵ are linear, branched or cyclic alkyl groups having 1 to 10 carbon atoms or aromatic carbonization. Represents a hydrogen group, and R ¹⁶ represents a direct bond, —C (CF ₃ ) ₂ —, —SO ₂ —, —CO—, —O— or a divalent hydrocarbon group.

（式（５）中、Ｒ^１７は、２価の炭化水素基を表し、Ｒ^１８及びＲ^１９は、酸により分解する基を表し、Ｒ^２０及びＲ^２１は、水素原子、ハロゲン原子又は炭素数１〜４のアルキル基を表す。）

(In the formula (5), R ¹⁷ represents a divalent hydrocarbon group, R ¹⁸ and R ¹⁹ represent a group that decomposes with an acid, and R ²⁰ and R ²¹ represent a hydrogen atom, a halogen atom, or a carbon number. Represents 1 to 4 alkyl groups.)

Furthermore, the second aspect of the present invention is a pattern forming method characterized by including at least the following steps:
Applying any one of the above-described photosensitive insulating resin compositions onto a substrate to be processed;
Performing pre-baking;
Exposure step;
Performing post-exposure baking;
A step of developing; and a step of post-baking.

  In addition, the present invention preferably further includes a post-exposure step between the step of performing development and the step of performing post-baking.

  In the photosensitive insulating resin composition and the pattern forming method of the present invention, it is possible to form a high resolution pattern by development with an alkaline developer. By heat treatment or heat treatment under an appropriate catalyst, a film having excellent heat resistance, mechanical properties, electrical properties and the like is obtained. Since the amide derivative represented by the general formula (1) is included, a film having excellent substrate adhesion can be provided.

  Hereinafter, the photosensitive insulating resin composition and the pattern forming method of the present invention will be described.

<Photosensitive insulating resin composition>
The photosensitive insulating resin composition of the present invention contains at least a polymer, a photosensitive agent, and an amide derivative represented by the following general formula (1). Usually, it can adjust by mixing a polymer, a photosensitizer, and an amide derivative.

（式（１）中、Ｒ^１は、２価のアルキル基であり、Ｒ^２は、炭素数１〜１０の炭化水素基であり、Ｒ^３は、水素原子又は炭素数１〜４のアルキル基を表す。）

(In formula (1), R ¹ is a divalent alkyl group, R ² is a hydrocarbon group having 1 to 10 carbon atoms, and R ³ is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. Represents.)

(Amide derivative)
In the amide derivative used in the photosensitive insulating resin composition of the present invention represented by the general formula (1), examples of the divalent alkyl group represented by R ¹ include a methylene group, an ethylene group, and propylene. Group, butylene group, pentamethylene group, hexamethylene group, heptamethylene group, octamethylene group, decamethylene group and the like. Also represented by R ^2, examples of the hydrocarbon group having 1 to 10 carbon atoms, a methyl group, an ethyl group, a propyl group, n- butyl group, a phenyl group, a naphthyl group. Examples of the alkyl group having 1 to 4 carbon atoms represented by R ³ include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, and a tert-butyl group. As a particularly preferred example, R ¹ is an octamethylene group or a butylene group, R ² is a phenyl group or a methyl group, and R ³ is a hydrogen atom or a methyl group.

  The amide derivative has a highly polar amide group or ether structure in the molecular structure. For this reason, the adhesiveness to a board | substrate can be improved by adding to this amide derivative photosensitive insulating resin composition. Further, when the polymer has an amide skeleton, it has an amide skeleton similar to that of the polymer, so that the compatibility with the resin is good and a uniform photosensitive composition can be produced.

  The method for producing the amide derivative can be selected as necessary. For example, it can be obtained by reaction of dicarbonyl chlorides with aminophenols. For example, JP-A-9-254540 discloses a method of synthesizing phthalic acid dichlorides and aminophenols by reacting them in a solvent such as acetonitrile or tetrahydrofuran in the presence of triethylamine.

  The content of the amide derivative is 0.5% by mass or more with respect to the total of the photosensitizer such as the polymer and the photoacid generator from the viewpoint of developing excellent substrate adhesion of the photosensitive insulating resin composition. Preferably, 1 mass% or more is more preferable. On the other hand, from the viewpoint of realizing good pattern formation, it is preferably 25% by mass or less, more preferably 15% by mass or less. Most preferably, it is 2-10 mass%.

  Examples of the amide derivative represented by the general formula (1) include those shown in Table 1, but are not limited thereto. You can select as needed.

(Polymer)
The polymer used in the present invention may be selected as necessary. Examples of the polymer include one or more repeating structural units represented by the following general formula (2).

（式（２）中、Ｒ^４は、水素原子又はメチル基を表し、Ｒ^５は、水素原子、又は酸により分解する基を表し、Ｒ^６〜Ｒ^９は、それぞれ独立に、水素原子、ハロゲン原子又は炭素数１〜４のアルキル基を表す。）

(In formula (2), R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a hydrogen atom or a group that decomposes with an acid, and R ^{6 to} R ⁹ each independently represents a hydrogen atom, a halogen atom, or a halogen atom. Represents an atom or an alkyl group having 1 to 4 carbon atoms.)

In the polymer used for the photosensitive insulating resin composition of the present invention represented by the general formula (2), the group decomposable by an acid represented by R ⁵ can be selected as necessary. Examples include t-butyl group, tetrahydropyran-2-yl group, tetrahydrofuran-2-yl group, 4-methoxytetrahydropyran-4-yl group, 1-ethoxyethyl group, 1-butoxyethyl group, 1- A propoxyethyl group, a methoxymethyl group, an ethoxymethyl group, a t-butoxycarbonyl group, etc. are mentioned. R ⁵ is more preferably an ethoxymethyl group, a methoxymethyl group, or a 1-ethoxyethyl group.

Examples of the halogen atom represented by R ^{6 to} R ⁹ include a fluorine atom and a chlorine atom.
R ⁶ is particularly preferably a hydrogen atom or a methyl group. R ⁷ is particularly preferably a hydrogen atom or a methyl group. R ⁸ is particularly preferably a hydrogen atom or a methyl group. R ⁹ is particularly preferably a hydrogen atom or a methyl group.

Examples of the alkyl group having 1 to 4 carbon atoms represented by R ^{6 to} R ⁹ include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, and a tert-butyl group.

Examples of the repeating structural unit represented by the general formula (2) include, but are not limited to, those shown in Table 2. You can select as needed.
The ratio of the repeating structural unit represented by the general formula (2) in the polymer is preferably 10 to 100, and more preferably 20 to 100.

  When the polymer used in the present invention is subjected to a heat treatment after forming a pattern or after heat-decomposing an acid-decomposable group with an acid, a ring closure reaction occurs, and an imide ring or a benzoxazole ring is formed. Therefore, the film is excellent in heat resistance, mechanical characteristics, electrical characteristics, and the like.

  For example, the following acrylamide polymer in which the group A is an acid-decomposable group is heat-treated as shown in the following reaction formula B, or by heat-treating after decomposing the acid-decomposable group with an acid, A ring closure reaction occurs, forming a benzoxazole ring.

  This benzoxazole ring has a stable structure. Therefore, by using such a polymer for an interlayer insulating film or a surface protective film, it is possible to form an interlayer insulating film or a surface protective film having excellent film characteristics such as heat resistance, mechanical characteristics, and electrical characteristics. .

  In the polymer used in the present invention, the raw material and method of the polymer containing the repeating structural unit represented by the general formula (2) are not particularly limited as long as such a polymer can be synthesized. For example, a (meth) acrylamide derivative represented by the general formula (6) can be suitably used as a raw material.

（式（６）中、Ｒ^４は、水素原子又はメチル基を表し、Ｒ^５は、水素原子、又は酸により分解する基を表し、Ｒ^６〜Ｒ^９は、それぞれ独立に、水素原子、ハロゲン原子又は炭素数１〜４のアルキル基を表す。）

(In Formula (6), R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a hydrogen atom or a group that decomposes with an acid, and R ^{6 to} R ⁹ each independently represent a hydrogen atom, a halogen atom, or a halogen atom. Represents an atom or an alkyl group having 1 to 4 carbon atoms.)

  The polymer containing the repeating structural unit represented by the general formula (2) used in the present invention may be obtained, for example, by polymerizing the (meth) acrylamide derivative represented by the general formula (6) alone. Alternatively, a copolymer obtained by using the (meth) acrylamide derivative as a main monomer and copolymerizing this main monomer and one or more other comonomers may be used. At this time, the ratio of the (meth) acrylamide derivative to the total monomers is preferably 10 to 100, and more preferably 20 to 100. The copolymer obtained by copolymerizing the above-mentioned (meth) acrylamide derivative and comonomer is added with the characteristics of the comonomer. Therefore, by using various comonomers, useful properties (resolution, sensitivity) for photosensitive insulating resin compositions containing this polymer, useful properties for interlayer insulating films and surface protective films formed from photosensitive resins (For example, heat resistance, mechanical properties, electrical properties, etc.) can be improved. The form of the copolymer can be selected as necessary, and may be, for example, a random copolymer, a block copolymer, or a graft copolymer.

  The comonomer may be selected as necessary. As an example of the comonomer, a vinyl monomer is preferable because it has sufficient polymerizability with the (meth) acrylamide derivative. Examples of vinyl monomers include (meth) acrylamide derivatives other than the above (meth) acrylamide derivatives, butadiene, acrylonitrile, styrene, (meth) acrylic acid, (meth) acrylic acid ester derivatives, ethylene derivatives, styrene derivatives, and the like. Can be used.

  Examples of the ethylene derivative include ethylene, propylene, and vinyl chloride. Examples of the styrene derivative include α-methylstyrene, p-hydroxystyrene, chlorostyrene, and a styrene derivative described in JP-A No. 2001-172315.

  In addition to vinyl monomers, maleic anhydride, N-phenylmaleimide derivatives and the like can also be used as comonomers. Examples of the N-phenylmaleimide derivative include N-phenylmaleimide and N- (4-methylphenyl) maleimide. These comonomer can use 1 type (s) or 2 or more types.

  Specific examples of the structural unit obtained from the comonomer in the copolymer as described above include a structural unit derived from a (meth) acrylic ester having a lactone ring represented by the following general formula (3). It is done.

（式（３）中、Ｒ^１０は、水素原子又はメチル基を表し、Ｒ^１１は、ラクトン構造を有する有機基を表す。）

(In formula (3), R ¹⁰ represents a hydrogen atom or a methyl group, and R ¹¹ represents an organic group having a lactone structure.)

Examples of the repeating structural unit represented by the general formula (3) include, but are not limited to, the examples shown in Table 3 below.

  When the photosensitive insulating resin composition of the present invention is used for an interlayer insulating film or a surface protective film, the polymer used in the present invention is represented by the general formula (2). The proportion of the repeating structural unit in the polymer is preferably 10 to 100 mol%, more preferably 20 to 100 mol%, and more preferably 30 to 100 mol%.

  In addition, as a weight average molecular weight (Mw) of the polymer contained in the photosensitive insulating resin composition of this invention, 2,000-200,000 are preferable normally and 4,000-100,000 are more preferable. When the weight average molecular weight (Mw) of the polymer is less than 2,000, it may be difficult to form a film uniformly when the polymer is used for an interlayer insulating film or a surface protective film. Moreover, when the weight average molecular weight of a polymer exceeds 200,000, when using a polymer for an interlayer insulation film or a surface protective film, resolution may worsen.

  As the polymer containing the repeating structural unit represented by the general formula (2), for example, a monomer composition containing the (meth) acrylamide derivative as described above is usually used for radical polymerization, anionic polymerization and the like. It can be obtained by polymerization by a polymerization method.

  For example, in the case of radical polymerization, a monomer composition containing a (meth) acrylamide derivative represented by the general formula (6) is dissolved in dry tetrahydrofuran, and a suitable radical polymerization initiator such as 2,2 ′ After adding azobis (isobutyronitrile), the polymer is obtained by stirring at 50 to 70 ° C. for 0.5 to 24 hours in an inert gas atmosphere such as argon or nitrogen.

  The polymer used in the present invention may have an acid-decomposable group. When the polymer used in the present invention has an acid-decomposable group, the photosensitizer used is preferably a photoacid generator that generates an acid when irradiated with light used for exposure. The photoacid generator used in the present invention is a mixture of the photoacid generator and the polymer of the present invention that can be sufficiently dissolved in an organic solvent, and is uniformly formed by a film forming method such as spin coating using the solution. There is no particular limitation as long as a simple coating film can be formed. Moreover, 1 type may be used for a photosensitive agent, and 2 or more types may be mixed and used for it.

  You may select a photo-acid generator as needed. Examples of photoacid generators include triarylsulfonium salt derivatives, diaryliodonium salt derivatives, dialkylphenacylsulfonium salt derivatives, nitrobenzyl sulfonate derivatives, sulfonic acid ester derivatives of N-hydroxynaphthalimide, and sulfones of N-hydroxysuccinimide. Examples include acid ester derivatives. However, it is not limited only to these.

  From the viewpoint of realizing sufficient sensitivity of the chemically amplified photosensitive resin composition and enabling good pattern formation, the content of the photoacid generator and the photosensitizer is the same as that of the polymer and the photoacid generator or the photosensitizer. 0.2 mass% or more is preferable with respect to the sum total, and 0.5 mass% or more is more preferable. On the other hand, it is preferably 30% by mass or less, more preferably 15% by mass or less, from the viewpoint of realizing formation of a uniform coating film and suppressing residue (scum) after development. It is especially preferable that it is 1-10 mass%.

  When the photosensitive insulating resin composition of the present invention using a photoacid generator is subjected to pattern exposure with actinic rays described later, an acid is generated from the photoacid generator constituting the photosensitive insulating resin composition of the exposed portion, It reacts with an acid-decomposable group, and the acid-decomposable group causes a decomposition reaction. As a result, the polymer of the present invention changes from insoluble to soluble in the alkaline developer in the exposed area, and a difference in solubility (dissolution contrast) occurs between the exposed area and the unexposed area. Pattern formation using this photosensitive insulating resin composition is performed utilizing the difference in solubility in such an alkaline developer.

In general formula (2) does not contain an acid-decomposable group as a polymer containing a repeating structural unit represented by the polymer (R ⁵ is a hydrogen atom), namely solubility difference (dissolved in exposed and unexposed areas When a photosensitive insulating resin composition is prepared using a polymer that does not sufficiently generate contrast) and a photoacid generator, for example, by containing a dissolution inhibitor having an acid-decomposable group described later, A dissolution contrast can be developed. In that case, when pattern exposure with actinic radiation to be described later, acid is generated from the photoacid generator contained in the photosensitive insulating resin composition of the exposed portion, reacts with the acid-decomposable group in the dissolution inhibitor, as a result, An acid-decomposable group in the dissolution inhibitor causes a decomposition reaction. As a result, dissolution is not inhibited by the dissolution inhibitor in the exposed portion, and the resin composition of the present invention is soluble in the alkaline developer in the exposed portion. On the other hand, the unexposed area remains insoluble in the alkaline developer. In this way, a difference in solubility (dissolution contrast) occurs between the exposed and unexposed areas. Pattern formation using such a photosensitive insulating resin composition is also performed utilizing the difference in solubility in an alkaline developer.
In the present invention, the use of a polymer containing an acid-decomposable group as a polymer containing the repeating structural unit represented by the general formula (2) and a dissolution inhibitor is also preferably performed.

  In preparing the photosensitive insulating resin composition of the present invention, an appropriate solvent may be used as necessary.

  The solvent is not particularly limited as long as the photosensitive insulating resin composition can be sufficiently dissolved and the solution can be uniformly applied by a spin coating method or the like. Specifically, γ-butyrolactone, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethyl lactate, 2-heptanone, 2-methoxybutyl acetate, 2-ethoxyethyl acetate, methyl pyruvate, ethyl pyruvate, 3 -Methyl methoxypropionate, ethyl 3-methoxypropionate, N-methyl-2-pyrrolidone (NMP), cyclohexanone, cyclopentanone, methyl isobutyl ketone (MIBK), ethylene glycol monomethyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol Monoethyl ether, ethylene glycol monoisopropyl ether, diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, etc. It is possible to use. These may be used alone or in admixture of two or more. When the photosensitive insulating resin composition of the present invention is used after being dissolved in a solvent, the ratio can be selected as necessary.

Furthermore, if necessary, other components such as a dissolution accelerator, a dissolution inhibitor, an adhesion improver, a surfactant, a pigment, a stabilizer, a coating property improver, and a dye are added to form a photosensitive insulating resin composition. A product can also be prepared.
For example, by adding a dissolution inhibitor to the photosensitive insulating resin composition, dissolution of an unexposed portion of the photosensitive resin in an alkaline developer is suppressed. On the other hand, in the exposed portion, the acid-decomposable group in the structure of the dissolution inhibitor is also decomposed by the action of the acid generated from the photoacid generator, and the solubility in an alkali developer is increased. As a result, the dissolution contrast between the exposed portion and the unexposed portion is increased, and a fine pattern can be formed.

  When a dissolution inhibitor is added to the photosensitive insulating resin composition, its content is the sum of the polymer, amide derivative and photoacid generator from the viewpoint of enabling good pattern formation of the photosensitive insulating resin composition. Is preferably 1% by mass or more, and more preferably 5% by mass or more. On the other hand, in order to realize the formation of a uniform coating film, the content is preferably 70% by mass or less, and more preferably 50% by mass or less. 10-40 mass% is the most preferable.

  Specific examples of the dissolution inhibitor include compounds represented by the following general formula (4) or the following general formula (5). However, it is not limited only to these.

（式（４）中、Ｒ^１２及びＲ^１３は、酸により分解する基を表し、Ｒ^１４及びＲ^１５は、炭素数１〜１０の直鎖状、分枝状あるいは環状のアルキル基又は芳香族炭化水素基を表し、Ｒ^１６は、直結合、−Ｃ（ＣＦ_３）_２−、−ＳＯ_２−、−ＣＯ−、−Ｏ−又は２価の炭化水素基を表す。）

(In the formula (4), R ¹² and R ¹³ represent groups that are decomposed by an acid, and R ¹⁴ and R ¹⁵ are linear, branched or cyclic alkyl groups having 1 to 10 carbon atoms or aromatic groups. Represents a hydrocarbon group, and R ¹⁶ represents a direct bond, —C (CF ₃ ) ₂ —, —SO ₂ —, —CO—, —O— or a divalent hydrocarbon group.

In formula (4), R ¹² and R ¹³ may be the same as or different from each other, and are groups that decompose with an acid. Although it may be selected as necessary, specific examples include t-butyl group, tetrahydropyran-2-yl group, tetrahydrofuran-2-yl group, 4-methoxytetrahydropyran-4-yl group, 1-ethoxy. Examples thereof include an ethyl group, 1-butoxyethyl group, 1-propoxyethyl group, methoxymethyl group, ethoxymethyl group, or t-butoxycarbonyl group. The linear, branched or cyclic alkyl group having 1 to 10 carbon atoms of R ¹⁴ and R ¹⁵ may be selected as necessary. Specific examples include a methyl group, an ethyl group, a butyl group, Examples include a cyclohexyl group, a norbornyl group, and a 5-norbornen-2-yl group. The aromatic hydrocarbon groups for R ¹⁴ and R ¹⁵ may be the same or different from each other, and may be selected as necessary. Specific examples include a phenyl group, a tolyl group, and a naphthyl group. Etc. Further, R ¹⁶ represents a direct bond, —C (CF ₃ ) ₂ —, —SO ₂ —, —CO—, —O— or a divalent hydrocarbon group (specifically, —C (CH ₃ )). _{2 -,} - CH ₂ - adamantane-diyl group, a tricyclodecane diyl group, norbornanediyl group, a cyclohexane diyl group, and phenylene group).

（式（５）中、Ｒ^１７は２価の炭化水素基を表し、Ｒ^１８及びＲ^１９は酸により分解する基を表し、Ｒ^２０及びＲ^２１は水素原子、ハロゲン原子又は炭素数１〜４のアルキル基を表す。）

(In the formula (5), R ¹⁷ represents a divalent hydrocarbon group, R ¹⁸ and R ¹⁹ represent groups that are decomposed by an acid, and R ²⁰ and R ²¹ represent a hydrogen atom, a halogen atom, or a carbon number of 1 to 4. Represents an alkyl group of

The divalent hydrocarbon group for R ¹⁷ may be selected as necessary. Specific examples include phenylene group, naphthylene group, adamantanediyl group, tricyclodecanediyl group, norbornanediyl group, cyclohexanediyl group and the like. Is mentioned. The groups decomposable by the acid represented by R ¹⁸ and R ¹⁹ may be the same or different from each other and may be selected as necessary. Specific examples include t-butyl group, tetrahydropyran. 2-yl group, tetrahydrofuran-2-yl group, 4-methoxytetrahydropyran-4-yl group, 1-ethoxyethyl group, 1-butoxyethyl group, 1-propoxyethyl group, methoxymethyl group, ethoxymethyl group, Examples include t-butoxycarbonyl group. R ²⁰ and R ²¹ may be the same or different from each other, and are a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms, and the alkyl group may be selected as necessary. Specific examples include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, tert-butyl group and the like.

  The photosensitive insulating resin composition of the present invention has excellent pattern resolution, can be developed with an alkaline developer, and has excellent adhesion to the substrate of the formed pattern. Moreover, the film | membrane which consists of a photosensitive insulating resin composition of this invention is excellent in film | membrane characteristics, such as heat resistance, a mechanical characteristic, and an electrical property. Therefore, such a photosensitive insulating resin composition can be suitably used for forming an interlayer insulating film or a surface protective film. The photosensitive insulating resin composition of the present invention can be preferably used as a positive photosensitive composition.

<Pattern formation method>
The pattern forming method of the present invention includes at least a coating step, a pre-bake step, an exposure step, a post-exposure bake step, a development step and a post-bake step. Specifically, a coating step for applying the photosensitive insulating resin composition on a substrate to be processed, a pre-baking step for fixing the photosensitive insulating resin composition coating film on the substrate to be processed, and coating the photosensitive insulating resin composition. An exposure process for selectively exposing the film, a post-exposure bake process for baking the photosensitive insulating resin composition coating film after exposure, and dissolving and removing the exposed portion of the photosensitive insulating resin composition coating film to form a pattern The development process and the post-baking process which hardens the photosensitive insulating resin composition coating film in which the pattern was formed are included at least in this order. Furthermore, the pattern forming method of the present invention may include a post-exposure step between the development step and the post-bake step.

  The application step is a step of applying the photosensitive insulating resin composition to a substrate to be processed, such as a silicon wafer or a ceramic substrate. The substrate to be processed can be selected as necessary. As a coating method, a spin coating method using a spin coater, a spray coating method using a spray coater, a dipping method, a printing method, a roll coating method, or the like can be used.

  The pre-baking step is a step for drying the photosensitive insulating resin composition applied on the substrate to be processed to remove the solvent and fixing the photosensitive insulating resin composition coating film on the substrate to be processed. The prebaking step is usually preferably performed at 60 to 150 ° C. Time is selected as needed.

  In the exposure step, the photosensitive insulating resin composition coating film is selectively exposed through a photomask to generate an exposed portion and an unexposed portion, and a pattern on the photomask is formed on the photosensitive insulating resin composition coating film. This is a transfer process. The actinic radiation used for pattern exposure can be selected as necessary. Examples of actinic rays that can be preferably used in the present invention include ultraviolet rays, visible rays, excimer lasers, electron beams, and X-rays. Actinic radiation having a wavelength of 180 to 500 nm can be used more preferably.

  The post-exposure baking step is a step of promoting the reaction between the acid generated by exposure and the acid-decomposable group of the polymer. The post-exposure bake step is usually preferably performed at 60 to 150 ° C. Time is selected as needed.

  The development step is a step of forming a pattern by dissolving and removing the exposed portion of the photosensitive insulating resin composition coating film with an alkaline developer. Due to the above exposure step, a difference in solubility (dissolution contrast) of the polymer with respect to the alkaline developer between the exposed portion and the unexposed portion of the photosensitive insulating resin composition coating film is generated. By utilizing this dissolution contrast, the exposed portion of the photosensitive insulating resin composition coating film is dissolved and removed by the alkaline developer, and a pattern is formed on the photosensitive insulating resin composition coating film (hereinafter simply referred to as “pattern”). ") Is obtained. Alkaline developer can be selected as needed, but water solution of quaternary ammonium base such as tetramethylammonium hydroxide (TMAH) and tetraethylammonium hydroxide, water-soluble alcohols such as methanol and ethanol, surfactants, etc. An aqueous solution or the like to which an appropriate amount has been added can be used. The developing method can be selected as necessary, but paddle, dipping, spraying, and the like are possible. It is also preferable to rinse the formed pattern with water after the development step.

  The post-bake process is a process in which the obtained pattern is subjected to heat treatment in the air or in an inert gas atmosphere, for example, a nitrogen atmosphere, to improve the adhesion between the pattern and the substrate to be processed, and to cure the pattern. . In this post-baking process, by heating the pattern formed of the photosensitive insulating resin composition, the structure of the polymer constituting the photosensitive insulating resin composition is changed (modified), and a benzoxazole ring is formed. The pattern is cured. In this way, a pattern having excellent film properties such as heat resistance, mechanical properties, and electrical properties can be obtained. The post-baking step is usually performed at 100 to 380 ° C., and it is preferable that heating is performed within the range in the present invention. More preferably, it is 180-280 degreeC. The post-bake process may be performed in one stage or in multiple stages. The time is selected as necessary, but is preferably about 0.5 to 3 hours, more preferably about 0.5 to 2 hours. The post-bake is preferably performed at a higher temperature than the pre-bake.

  The post-exposure step that may be performed between the step of performing development and the step of performing post-baking is a process in which the photosensitive insulating resin composition coating film on which the pattern is formed is further exposed over the entire surface, and then the post-baking step. This is a step of promoting the curing of the pattern. Depending on the conditions, it is possible to perform photobleaching (photolysis) of the remaining photosensitizer. The actinic radiation used for the post-exposure may be the same as the actinic radiation used in the exposure step, and is preferably actinic radiation having a wavelength of 180 to 500 nm.

  Hereinafter, the present invention will be described more specifically with reference to examples.

(Synthesis Example 1)
Synthesis of an amide derivative (A-1 in Table 1) in which R ¹ is an octamethylene group, R ² is a methyl group, and R ³ is a hydrogen atom in the general formula (1)

  27.5 g of o-anisidine and 30.24 g of N, N-diisopropylethylamine were dissolved in 200 ml of N-methyl-2-pyrrolidone (NMP). There, 25.43 g of sebacoyl chloride was added little by little under ice cooling. After stirring for 2 hours under ice-cooling, the mixture was stirred overnight at room temperature. Thereafter, the reaction mixture was poured into 1500 mL of water, and the deposited precipitate was filtered and further washed with water. After drying under reduced pressure, the product was further washed with diethyl ether and further recrystallized with ethyl acetate / tetrahydrofuran (2/1) to obtain 25.52 g of a white target product (yield 58%).

(Synthesis Example 2)
Synthesis of an amide derivative (A-2 in Table 1) in which R ¹ is an octamethylene group, R ² is a phenyl group, and R ³ is a hydrogen atom in the general formula (1)

  Synthesis was performed in the same manner as in Synthesis Example 1 except that 2-phenoxyaniline was used instead of o-anisidine to obtain a white target product (yield 47%).

(Synthesis Example 3)
In the general formula (2), R ^{4 to} R ⁹ are 50 mol% of a structural unit (B-16 in Table 2), and in the general formula (2), R ⁴ is a hydrogen atom, and R ⁵ is ethoxymethyl. Synthesis of a polymer (hereinafter, the number attached to the repeating unit indicates mol%) containing 50 mol% of a structural unit (B-1 in Table 2) in which R ^{6 to} R ⁹ are hydrogen atoms

  12.2 g of N- (2-hydroxyphenyl) acrylamide and 9 g of N- (2-ethoxymethoxyphenyl) acrylamide were dissolved in 50 ml of tetrahydrofuran. Thereto was added 0.181 g of 2,2′-azobis (isobutyronitrile), and the mixture was heated and stirred at about 65 ° C. for 6 hours under an argon atmosphere. After allowing to cool, reprecipitation was performed using 500 ml of diethyl ether, and the precipitated polymer was separated by filtration and purified once again by reprecipitation to obtain 17.91 g of the desired polymer (yield 84%). The weight average molecular weight (Mw) by GPC analysis was 35800 (polystyrene conversion), and dispersity (Mw / Mn) was 3.72.

(Synthesis Example 4)
In the general formula (2), R ⁴ is a methyl group and R ^{5 to} R ⁹ are hydrogen in a structural unit (B-17 in Table 2) 50 mol%, and in the general formula (2), R ⁴ is a hydrogen atom R ⁵ is an ethoxymethyl group, and R ^{6 to} R ⁹ are hydrogen atoms, and a polymer containing 50 mol% of a structural unit (B-1) (the number given to the repeating unit below is mol%) Synthesis)

  Polymerization was carried out in the same manner as in Synthesis Example 1 except that 13.25 g of N- (2-hydroxyphenyl) methacrylamide was used instead of N- (2-hydroxyphenyl) acrylamide to obtain 17.58 g of the desired polymer. (Yield 79%). Mw was 32100 (polystyrene conversion), and Mw / Mn was 3.65.

(Synthesis Example 5)
In the general formula (2), R ^{4 to} R ⁹ are 30 mol% of the structural unit (B-16) in hydrogen, in the general formula (2), R ⁴ is a hydrogen atom, R ⁵ is an ethoxymethyl group, R ^{6 to} R ⁹ are 50 mol% of a structural unit (B-1) in which a hydrogen atom is present, and in the general formula (3), R ¹⁰ is a hydrogen atom, and R ¹¹ is 2,6-norbornanelactone-5-yl. Synthesis of a polymer containing 20 mol% of a structural unit (C-1 in Table 3) as a group (hereinafter, the number attached to the repeating unit indicates mol%)

  12.39 g of N- (2-hydroxyphenyl) acrylamide, 28 g of N- (2-ethoxymethoxyphenyl) acrylamide and 10.54 g of 5-acryloyloxy-2,6-norbornanelactone were dissolved in 119 ml of tetrahydrofuran. 2,2′-azobis (isobutyronitrile) 0.416 g was added thereto, and the mixture was heated and stirred at about 65 ° C. for 4 hours under an argon atmosphere. After allowing to cool, the mixture was reprecipitated using 1000 ml of diethyl ether, the precipitated polymer was separated by filtration, and purified by reprecipitation again to obtain 48.79 g of the target polymer (yield 96%). Mw was 29000 (polystyrene conversion), and Mw / Mn was 3.32.

(Synthesis Example 6)
Synthesis of a polymer in which the structural unit (B-16) in which R ^{4 to} R ⁹ are hydrogen atoms in the general formula (2) is 100 mol% (the number attached to the repeating unit below indicates mol%)

  10 g of N- (2-hydroxyphenyl) acrylamide was dissolved in 30 ml of tetrahydrofuran, 0.201 g of 2,2′-azobis (isobutyronitrile) was added thereto, and the mixture was heated and stirred at about 65 ° C. for 4 hours under an argon atmosphere. . After allowing to cool, it was reprecipitated in 300 ml of diethyl ether, and the precipitated polymer was filtered off and purified again by reprecipitation to obtain 9.4 g of the desired polymer (yield 94%). Mw was 4900 (polystyrene conversion) and Mw / Mn was 2.33.

(Synthesis Example 7)
2,2-bis (4-ethoxymethoxy-3-benzamidophenyl) hexafluoropropane (in the general formula (4), R ¹² and R ¹³ are ethoxymethyl groups, R ¹⁴ and R ¹⁵ are phenyl groups, Synthesis of a compound in which R ¹⁶ is —C (CF ₃ ) ₂ — (the following formula)

  After dissolving 10 g of 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane in 60 ml of NMP, 2.546 g of lithium chloride was added and ice-cooled. Thereto was added 8.06 g of benzoyl chloride, and the mixture was stirred at room temperature overnight under ice-cooling for 1 hour. The reaction mixture was poured into 600 ml of water, and the deposited precipitate was filtered off and washed with water to obtain 12 g of 2,2-bis (4-hydroxy-3-benzamidophenyl) hexafluoropropane.

10 g of 2,2-bis (4-hydroxy-3-benzamidophenyl) hexafluoropropane and 6.75 g of N, N-diisopropylethylamine were dissolved in 60 ml of NMP. Thereafter, 3.62 g of chloromethyl ethyl ether was added and stirred at room temperature for a whole day. Thereafter, the reaction mixture was poured into 600 ml of water and extracted with 300 ml of diethyl ether. The obtained diethyl ether layer was washed with 0.06N hydrochloric acid, brine, 3% aqueous sodium hydroxide, and brine in this order. After that, it was dried over magnesium sulfate, and then the solvent was distilled off under reduced pressure. The obtained residue was recrystallized from hexane / ethyl acetate (5/4) to obtain 7.8 g of the desired product (white solid, yield 65%).
¹ H-NMR (THF-d8, δ value): 1.22 (6H, t), 3.79 (4H, q), 5.39 (4H, s), 7.12 (2H, d), 7 .27 (2H, d), 7.45-7.55 (6H, m), 7.9-7.93 (4H, m), 8.73 (2H, s), 8.84 (2H, s) ).

(Synthesis Example 8)
N, N′-bis (2-ethoxymethoxyphenyl) isophthalamide (in the general formula (5), R ¹⁷ is a phenylene group, R ¹⁸ and R ¹⁹ are ethoxymethyl groups, and R ²⁰ and R ²¹ are hydrogen atoms) , The following formula)

  27.548 g of o-aminophenol and 11.484 g of lithium chloride were dissolved in 260 ml of NMP. Thereto, 25 g of isophthaloyl chloride was added under ice cooling, and the mixture was further stirred overnight at room temperature. Thereafter, the reaction mixture was poured into water, and the deposited precipitate was filtered off and further washed with water. The obtained precipitate was dissolved again in 500 ml of tetrahydrofuran and dried over magnesium sulfate, and then the solvent was distilled off under reduced pressure to obtain 40 g of N, N′-di (2-hydroxyphenyl)] isophthalamide.

Next, 40 g of N, N′-di (2-hydroxyphenyl)] isophthalamide and 44.52 g of N, N-diisopropylethylamine were dissolved in 200 ml of NMP. Thereto was added 23.88 g of chloromethyl ethyl ether, and the mixture was stirred at room temperature for 3 days. Thereafter, the reaction mixture was poured into 600 ml of water and extracted with 300 ml of diethyl ether. The obtained diethyl ether layer was washed with 0.06N hydrochloric acid, brine, 3% aqueous sodium hydroxide, and brine in this order. After that, it was dried over magnesium sulfate, and then the solvent was distilled off under reduced pressure. The obtained residue was recrystallized twice with hexane / ethyl acetate (5/4) to obtain 26 g of the desired product (white solid, yield 49%).
1H-NMR (THF-d8, δ value): 1.21 (6H, t), 3.78 (4H, q), 5.35 (4H, s), 6.99-7.08 (4H, m ), 7.24 (2H, dd), 7.64 (1H, s), 8.12 (2H, dd), 8.45 (2H, dd), 8.52 (1H, s), 9.00 (2H, brs).

Example 1
(A) 30 g of the polymer obtained in Synthesis Example 3, (b) 1.2 g of the amide derivative obtained in Synthesis Example 1, (c) Photoacid generator (N- (p-toluenesulfonyloxy) naphthalimide “NAI— 101 "(trade name, manufactured by Midori Chemical Co., Ltd.) 0.45 g, (d) a dissolution inhibitor (the compound obtained in Synthesis Example 8) 6 g, and (d) 49.7 g of γ-butyrolactone was 0.2 μm. And using a Teflon (registered trademark) filter, a chemically amplified photosensitive resin composition was prepared.

This photosensitive insulating resin composition was spin-coated on a 5-inch silicon substrate and dried in an oven at 110 ° C. for 20 minutes to form a thin film having a thickness of 11 μm. Next, this was pattern-exposed with ultraviolet rays (wavelength 350 to 450 nm) through a photomask. After exposure, it was placed in an oven and baked at 100 ° C. for 10 minutes. Thereafter, development was performed by immersion in a 2.38% tetramethylammonium hydroxide (TMAH) aqueous solution at room temperature for 2 minutes, followed by rinsing with pure water for 3 minutes. As a result, only the exposed portion of the photosensitive resin film was dissolved and removed in the developer, and a positive pattern was obtained. As a result of SEM observation of the obtained pattern, it was found that a 6 μm through-hole pattern could be resolved with a sensitivity of 600 mJ / cm ² .

Next, the entire surface of the wafer on which the pattern was formed was exposed with ultraviolet rays (wavelength 350 to 450 nm) having an exposure amount of 600 mJ / cm ² . Furthermore, it was baked in an oven at 100 ° C. for 1 hour and at 220 ° C. for 1 hour in a nitrogen atmosphere to form a benzoxazole ring, and a final pattern excellent in heat resistance having a film thickness of 8 μm was obtained. As a result of SEM observation of the formed pattern, no crack or peeling was observed in the pattern.

(Examples 2 and 3)
A photosensitive insulating resin composition was prepared in the same manner as in Example 1 except that the polymer obtained in Synthesis Example 4 or 5 was used instead of the polymer obtained in Synthesis Example 3, and spin coating, pattern photosensitivity, etc. To form a positive pattern. Table 4 shows the results of examining the sensitivity of the pattern obtained at that time and the resolution of the through-hole pattern.

  Next, the obtained pattern was baked in an oven at 100 ° C. for 1 hour and 220 ° C. for 1 hour in a nitrogen atmosphere to form a benzoxazole ring, thereby obtaining a final pattern excellent in heat resistance and the like. . As a result of SEM observation of the formed pattern, no crack or peeling was observed in the pattern.

Example 4
A chemically amplified photosensitive resin composition was prepared in the same manner as in Example 1 except that the amide derivative obtained in Synthesis Example 2 was used instead of the amide derivative obtained in Synthesis Example 1, and spin coating, pattern photosensitivity, etc. And a positive pattern was formed. Table 4 shows the results of examining the sensitivity of the pattern and the resolution of the through-hole pattern.

  Next, the obtained pattern was baked in an oven at 100 ° C. for 1 hour and at 220 ° C. for 1 hour in a nitrogen atmosphere to form a benzoxazole ring, thereby obtaining a final pattern excellent in heat resistance and the like. As a result of SEM observation of the formed pattern, no crack or peeling was observed in the pattern.

(Example 5)
A photosensitive insulating resin composition was prepared in the same manner as in Example 1 except that the dissolution inhibitor obtained in Synthesis Example 7 was used instead of the dissolution inhibitor obtained in Synthesis Example 8, and spin coating, pattern photosensitivity, etc. To form a positive pattern. Table 4 shows the results of examining the sensitivity of the pattern and the resolution of the through-hole pattern.

  Next, the obtained pattern was baked in an oven at 100 ° C. for 1 hour and at 220 ° C. for 1 hour in a nitrogen atmosphere to form a benzoxazole ring, thereby obtaining a final pattern excellent in heat resistance and the like. As a result of SEM observation of the formed pattern, no crack or peeling was observed in the pattern.

(Example 6)
(A) 10 g of the polymer obtained in Synthesis Example 5, (b) 0.4 g of the amide derivative obtained in Synthesis Example 2, (c) Photoacid generator (N- (p-toluenesulfonyloxy) naphthalimide “NAI— 101 "(trade name) 0.15 g, (d) a dissolution inhibitor (compound obtained in Synthesis Example 8) 2 g, and (e) 18 g of γ-butyrolactone was added to a 0.2 μm Teflon (registered trademark) filter. And filtered to prepare a chemically amplified photosensitive resin composition.

This photosensitive insulating resin composition was spin-coated on a 5-inch silicon substrate on which Cu was formed, and dried in an oven at 110 ° C. for 20 minutes to form a thin film having a thickness of 11 μm. Next, pattern exposure was performed with ultraviolet rays (wavelength: 350 to 450 nm) through a photomask. After exposure, after baking at 100 ° C. for 10 minutes in an oven, development was performed by immersion in a 2.38% TMAH aqueous solution at room temperature for 2 minutes, followed by rinsing with pure water for 3 minutes. As a result, only the exposed portion of the photosensitive resin film was dissolved and removed in the developer, and a positive pattern was obtained. As a result of SEM observation of the obtained pattern, it was found that a 6 μm through-hole pattern could be resolved with a sensitivity of 600 mJ / cm ² .

Next, the entire surface of the wafer on which the pattern has been formed is exposed to ultraviolet rays (wavelength 350 to 450 nm) with an exposure amount of 600 mJ / cm ² , and further in an oven at 100 ° C. for 1 hour and 220 ° C. for 1 hour in a nitrogen atmosphere. By baking, a benzoxazole ring was formed, and a final pattern excellent in heat resistance and the like having a film thickness of 8 μm was obtained. As a result of SEM observation of the formed pattern, no crack or peeling was observed in the pattern.

(Example 7)
(A) 10 g of the polymer obtained in Synthesis Example 6, (b) 0.4 g of the amide derivative obtained in Synthesis Example 2, (c) Photoacid generator (N- (p-toluenesulfonyloxy) naphthalimide “NAI— 101 ”(trade name) 0.15 g, (d) 3.5 g of a dissolution inhibitor (compound obtained in Synthesis Example 8) and (e) 25 g of γ-butyrolactone was added to a 0.2 μm Teflon (registered trademark) filter. The mixture was filtered using a to prepare a photosensitive resin composition.

This photosensitive insulating resin composition was spin-coated on a 5-inch silicon substrate on which Cu was formed, and dried in an oven at 110 ° C. for 20 minutes to form a thin film having a thickness of 11 μm. Next, pattern exposure was performed with ultraviolet rays (wavelength: 350 to 450 nm) through a photomask. After exposure, after baking at 100 ° C. for 10 minutes in an oven, development was performed by immersion in a 2.38% TMAH aqueous solution at room temperature for 2 minutes, followed by rinsing with pure water for 3 minutes. As a result, only the exposed portion of the photosensitive resin film was dissolved and removed in the developer, and a positive pattern was obtained. As a result of SEM observation of the obtained pattern, it was found that a 10 μm through-hole pattern could be resolved with a sensitivity of 500 mJ / cm ² .

Next, the entire surface of the wafer on which the pattern has been formed is exposed with ultraviolet light (wavelength 350 to 450 nm) having an exposure amount of 500 mJ / cm ² , and further in an oven at 100 ° C. for 1 hour and 220 ° C. for 1 hour in a nitrogen atmosphere. By baking, a benzoxazole ring was formed, and a final pattern excellent in heat resistance and the like having a film thickness of 8.2 μm was obtained. As a result of SEM observation of the formed pattern, no crack or peeling was observed in the pattern.

As is apparent from the above description, the photosensitive insulating resin composition of the present invention can be developed with an aqueous alkaline solution and has excellent resolution, and the formed resin pattern has excellent substrate adhesion, and the semiconductor. It can be used for an interlayer insulating film or a surface protective film of an element.
That is, it provides a photosensitive insulating resin composition having excellent film properties such as heat resistance, mechanical properties, and electrical properties, capable of alkali development, high resolution, and formed resin pattern with excellent substrate adhesion. it can.

Claims (9)

A photosensitive insulating resin composition comprising a polymer, a photosensitive agent, and an amide derivative represented by the following general formula (1).

(In Formula (1), R ¹ represents a divalent alkyl group, R ² represents a hydrocarbon group having 1 to 10 carbon atoms, and R ³ represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.) The photosensitive insulating resin composition of Claim 1 whose said polymer is a polymer containing 1 or more types of repeating structural units represented by following General formula (2).

(In the formula (2), R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a hydrogen atom or a group decomposed by an acid, and R ^{6 to} R ⁹ each independently represents a hydrogen atom, a halogen atom or Represents an alkyl group having 1 to 4 carbon atoms.) The photosensitivity according to claim 2, wherein the polymer containing the repeating structural unit represented by the general formula (2) is a polymer further containing one or more repeating structural units represented by the general formula (3). Insulating resin composition.

(In formula (3), R ¹⁰ represents a hydrogen atom or a methyl group, and R ¹¹ represents an organic group having a lactone structure.)   The photosensitive insulating resin composition according to claim 1, further comprising a dissolution inhibitor. The photosensitive insulating resin composition according to claim 4, wherein the dissolution inhibitor is a compound represented by the following general formula (4) or the following general formula (5).

(In the formula (4), R ¹² and R ¹³ represent groups that are decomposed by an acid, and R ¹⁴ and R ¹⁵ are linear, branched or cyclic alkyl groups having 1 to 10 carbon atoms or aromatic hydrocarbons. R ¹⁶ represents a direct bond, —C (CF ₃ ) ₂ —, —SO ₂ —, —CO—, —O— or a divalent hydrocarbon group.

(In the formula (5), R ¹⁷ represents a divalent hydrocarbon group, R ¹⁸ and R ¹⁹ represent groups that are decomposed by an acid, and R ²⁰ and R ²¹ represent a hydrogen atom, a halogen atom, or a carbon number of 1 to 4. Represents an alkyl group of A pattern forming method comprising the following steps:
Applying the chemically amplified photosensitive resin composition according to claim 1 onto a substrate to be processed;
Performing pre-baking;
Exposure step;
Performing post-exposure baking;
A step of developing; and a step of post-baking.   The pattern forming method according to claim 6, further comprising a post-exposure step between the developing step and the post-baking step. The pattern forming method according to claim 6, wherein in the step of developing, an aqueous alkali solution is used for the development, and the exposed portion is dissolved in the aqueous alkali solution. The pattern forming method according to claim 6, wherein the exposure is performed with actinic radiation having a wavelength of 180 to 500 nm through a photomask.