JPS648670A - Mos field-effect transistor - Google Patents

Abstract

PURPOSE:To enhance a gain constant beta value by forming the semiconductor section of source, drain and channel regions of a MOSFET in a rectangular parallelepiped having a side face substantially perpendicular to the plane of a wafer substrate, forming the height of the semiconductor section larger than its width, and extending a gate electrode perpendicularly to the plane of the substrate. CONSTITUTION:Part of an n-type silicon (Si) wafer substrate 11 is formed in a rectangular parallelepiped semiconductor section 12 having its height larger than its width. This section is formed with source, drain and channel regions, and a gate electrode 14 is formed on an insulating film 13 corresponding to the channel region. The side face of the section 12 is substantially perpendicular to the plane of the substrate 1, and the electrode 14 is also perpendicular to the plane of the substrate 11. Since the electrode 14 is extended at both sides over the top of the section 12, the gate electrode which operates as a gate is longer than a conventional case, and a channel width W corresponds to twice as large as the height (h) in the drawing. Then, the width l of the electrode 14 corresponds to the channel length L.