JPS6469013A - Grinding method - Google Patents

Grinding method

Info

Publication number
JPS6469013A
JPS6469013A JP22789287A JP22789287A JPS6469013A JP S6469013 A JPS6469013 A JP S6469013A JP 22789287 A JP22789287 A JP 22789287A JP 22789287 A JP22789287 A JP 22789287A JP S6469013 A JPS6469013 A JP S6469013A
Authority
JP
Japan
Prior art keywords
protection film
ultraviolet
element forming
resin
forming surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22789287A
Other languages
Japanese (ja)
Inventor
Yutaka Yamada
Nobuo Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22789287A priority Critical patent/JPS6469013A/en
Publication of JPS6469013A publication Critical patent/JPS6469013A/en
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To enable a protection film to be removed quickly and positively, by forming the protection film on the element forming surface of a semiconductor wafer, polishing the grinding surface opposite to the element forming surface and modifying the protection film after the polishing. CONSTITUTION:A thermosetting or ultraviolet-setting resin is applied on the element forming surface 1a of a semiconductor wafer 1 and is dried and cured to provide a protection film 2. The wafer 1 is then attached to the table surface of a grinding apparatus not shown such that the element forming surface 1a is put on the underside, and the grinding surface 1b is ground to remove the part as indicated by the broken lines. Then, lf the protection film 2 of the semiconductor wafer 1 is formed of the thermosetting resin it is irradiated with infrared rays by an infrared lamp, while if it is of the ultraviolet-setting resin, it is irradiated with ultraviolet rays by an ultraviolet lamp. After the resin is set thereby, the semiconductor wafer 1 is dipped in a cleaning solution of trichlene or the like, whereby the thermosetting or ultraviolet-setting resin is peeled off very quickly without any residual resin on the element forming surface 1a.
JP22789287A 1987-09-10 1987-09-10 Grinding method Pending JPS6469013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22789287A JPS6469013A (en) 1987-09-10 1987-09-10 Grinding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22789287A JPS6469013A (en) 1987-09-10 1987-09-10 Grinding method

Publications (1)

Publication Number Publication Date
JPS6469013A true JPS6469013A (en) 1989-03-15

Family

ID=16867957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22789287A Pending JPS6469013A (en) 1987-09-10 1987-09-10 Grinding method

Country Status (1)

Country Link
JP (1) JPS6469013A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1122767A1 (en) * 1999-04-30 2001-08-08 Shin-Etsu Handotai Co., Ltd Wafer polishing method and cleaning method, and protection film
JP2003338477A (en) * 2002-05-22 2003-11-28 Disco Abrasive Syst Ltd Separating method of tape
KR100411256B1 (en) * 2001-09-05 2003-12-18 삼성전기주식회사 A wafer lapping process and a method of processing a wafer backside using the same
US6713366B2 (en) * 2002-06-12 2004-03-30 Intel Corporation Method of thinning a wafer utilizing a laminated reinforcing layer over the device side
KR100917084B1 (en) * 2001-12-27 2009-09-15 닛토덴코 가부시키가이샤 Protective tape applying and separating method
US7867829B2 (en) 2006-09-15 2011-01-11 Mitsubishi Electric Corporation Semiconductor device manufacturing method, semiconductor wafer, and semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189938A (en) * 1984-03-12 1985-09-27 Nitto Electric Ind Co Ltd Protective method of semiconductor wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189938A (en) * 1984-03-12 1985-09-27 Nitto Electric Ind Co Ltd Protective method of semiconductor wafer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1122767A1 (en) * 1999-04-30 2001-08-08 Shin-Etsu Handotai Co., Ltd Wafer polishing method and cleaning method, and protection film
KR100411256B1 (en) * 2001-09-05 2003-12-18 삼성전기주식회사 A wafer lapping process and a method of processing a wafer backside using the same
KR100917084B1 (en) * 2001-12-27 2009-09-15 닛토덴코 가부시키가이샤 Protective tape applying and separating method
JP2003338477A (en) * 2002-05-22 2003-11-28 Disco Abrasive Syst Ltd Separating method of tape
US6713366B2 (en) * 2002-06-12 2004-03-30 Intel Corporation Method of thinning a wafer utilizing a laminated reinforcing layer over the device side
US7867829B2 (en) 2006-09-15 2011-01-11 Mitsubishi Electric Corporation Semiconductor device manufacturing method, semiconductor wafer, and semiconductor device

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