JPS6449257A - Thin-film transistor - Google Patents

Thin-film transistor

Info

Publication number
JPS6449257A
JPS6449257A JP20597787A JP20597787A JPS6449257A JP S6449257 A JPS6449257 A JP S6449257A JP 20597787 A JP20597787 A JP 20597787A JP 20597787 A JP20597787 A JP 20597787A JP S6449257 A JPS6449257 A JP S6449257A
Authority
JP
Japan
Prior art keywords
crystal
seed crystal
film
region
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20597787A
Other languages
Japanese (ja)
Inventor
Shuya Abe
Koji Mori
Hirobumi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Original Assignee
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Research Institute of General Electronics Co Ltd, Ricoh Co Ltd filed Critical Ricoh Research Institute of General Electronics Co Ltd
Priority to JP20597787A priority Critical patent/JPS6449257A/en
Publication of JPS6449257A publication Critical patent/JPS6449257A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enhance the carrier mobility and to increase the operation speed of a transistor by a method wherein a semiconductor film to be used as a channel part is formed by a single-crystal silicon film which has been made monocrystalline by a crystal growth operation of a silicon thin film adjacent to a seed crystal region. CONSTITUTION:Polycrystalline silicon is scanned by using an Ar laser beam; it is melted and recrystallized; a region of a seed crystal 7 2mum square is obtained. The laser beam is scanned from the region of the seed crystal 7; a polycrystalline silicon thin film 11 is melted and recrystallized in its direction; a single-crystal silicon thin-film 10 is obtained by making use of the seed crystal 7 as a nucleus. Its surface is thermally oxidized; polycrystalline silicon is grown thereon. This is patterned and a gate electrode 5 is formed. By this setup, the carrier mobility can be enhanced; an operation speed of a transistor can thus be increased.
JP20597787A 1987-08-19 1987-08-19 Thin-film transistor Pending JPS6449257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20597787A JPS6449257A (en) 1987-08-19 1987-08-19 Thin-film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20597787A JPS6449257A (en) 1987-08-19 1987-08-19 Thin-film transistor

Publications (1)

Publication Number Publication Date
JPS6449257A true JPS6449257A (en) 1989-02-23

Family

ID=16515850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20597787A Pending JPS6449257A (en) 1987-08-19 1987-08-19 Thin-film transistor

Country Status (1)

Country Link
JP (1) JPS6449257A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
KR100355938B1 (en) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device manufacturing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5486708A (en) * 1990-11-15 1996-01-23 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5572045A (en) * 1990-11-15 1996-11-05 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5728591A (en) * 1990-11-15 1998-03-17 Seiko Instruments Inc. Process for manufacturing light valve device using semiconductive composite substrate
KR100355938B1 (en) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device manufacturing method

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