JPS6441212A - Semiconductor crystal growth method - Google Patents

Semiconductor crystal growth method

Info

Publication number
JPS6441212A
JPS6441212A JP19626087A JP19626087A JPS6441212A JP S6441212 A JPS6441212 A JP S6441212A JP 19626087 A JP19626087 A JP 19626087A JP 19626087 A JP19626087 A JP 19626087A JP S6441212 A JPS6441212 A JP S6441212A
Authority
JP
Japan
Prior art keywords
gas
substrate
film thickness
hydrogen
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19626087A
Other languages
Japanese (ja)
Inventor
Yoshio Oshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19626087A priority Critical patent/JPS6441212A/en
Publication of JPS6441212A publication Critical patent/JPS6441212A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form an impurity added silicon layer, film thickness of which is controlled accurately, by using the mixed gas of hydrogen gas and a nonreactive gas, which does not contribute to the elementary process of a reaction, as a carrier gas. CONSTITUTION:A device is formed from a reaction tube 1 in which growth is conducted, a susceptor 2 for holding a substrate 8, a device 3 heating the substrate 8 and the susceptor 2, bombs 4a, 4b, 4c, 4d and flow control sections 6. The mixed gas of hydrogen and a nonreactive gas not related to a growth reaction except hydrogen is employed as a carrier gas at that time. Consequently, the nonuniformity of film thickness in the surface of the substrate 8 generated from the unevenness of the supply of a raw material is removed. Accordingly, an impurity-added silicon layer, film thickness of which is controlled precisely, is shaped.
JP19626087A 1987-08-07 1987-08-07 Semiconductor crystal growth method Pending JPS6441212A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19626087A JPS6441212A (en) 1987-08-07 1987-08-07 Semiconductor crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19626087A JPS6441212A (en) 1987-08-07 1987-08-07 Semiconductor crystal growth method

Publications (1)

Publication Number Publication Date
JPS6441212A true JPS6441212A (en) 1989-02-13

Family

ID=16354851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19626087A Pending JPS6441212A (en) 1987-08-07 1987-08-07 Semiconductor crystal growth method

Country Status (1)

Country Link
JP (1) JPS6441212A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243634A (en) * 2010-05-14 2011-12-01 Toyota Central R&D Labs Inc Method of growing semiconductor film in vapor phase
JP2020529127A (en) * 2017-07-26 2020-10-01 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ Epitaxially coated semiconductor wafer of single crystal silicon and its manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966067A (en) * 1972-10-30 1974-06-26
JPS6218004A (en) * 1985-07-17 1987-01-27 松下電器産業株式会社 Voltage depending non-linear resistance body
JPS62219970A (en) * 1986-03-22 1987-09-28 Nippon Denso Co Ltd Manufacture of thin film semiconductor element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966067A (en) * 1972-10-30 1974-06-26
JPS6218004A (en) * 1985-07-17 1987-01-27 松下電器産業株式会社 Voltage depending non-linear resistance body
JPS62219970A (en) * 1986-03-22 1987-09-28 Nippon Denso Co Ltd Manufacture of thin film semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243634A (en) * 2010-05-14 2011-12-01 Toyota Central R&D Labs Inc Method of growing semiconductor film in vapor phase
JP2020529127A (en) * 2017-07-26 2020-10-01 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ Epitaxially coated semiconductor wafer of single crystal silicon and its manufacturing method

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