JPS6438727A - Transistor array substrate for display - Google Patents

Transistor array substrate for display

Info

Publication number
JPS6438727A
JPS6438727A JP62195581A JP19558187A JPS6438727A JP S6438727 A JPS6438727 A JP S6438727A JP 62195581 A JP62195581 A JP 62195581A JP 19558187 A JP19558187 A JP 19558187A JP S6438727 A JPS6438727 A JP S6438727A
Authority
JP
Japan
Prior art keywords
thin films
array
display
sheets
deflectless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62195581A
Other languages
Japanese (ja)
Inventor
Masakazu Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62195581A priority Critical patent/JPS6438727A/en
Publication of JPS6438727A publication Critical patent/JPS6438727A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13336Combining plural substrates to produce large-area displays, e.g. tiled displays

Abstract

PURPOSE:To greatly decrease the generation of display defects by arraying plural sheets of thin films each formed with a thin film transistor array, signal supply circuit and scanning circuit on single crystal silicon onto a glass substrate. CONSTITUTION:Four sheets of the thin films 2 each formed with the TFT array 3, the signal supply circuit 4 and the scanning circuit 5 on the (001) single crystal silicon are provided on the substrate 1. The thin films 2 having light transmittivity have a polygonal shape and the plural sheets are flatly laid and compacted by bringing the respective sides of the thin films having light transmittivity into tight contact with each other so that a wide image plane is obtd. Since the entire part of the TR array region is divided to plural pieces of the thin films 2, the elimination of defects in the respective TFT arrays is facilitated. The deflectless TR array for large-area display is thus obtd. by flatly arraying the thin films of the deflectless TR arrays.
JP62195581A 1987-08-04 1987-08-04 Transistor array substrate for display Pending JPS6438727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62195581A JPS6438727A (en) 1987-08-04 1987-08-04 Transistor array substrate for display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195581A JPS6438727A (en) 1987-08-04 1987-08-04 Transistor array substrate for display

Publications (1)

Publication Number Publication Date
JPS6438727A true JPS6438727A (en) 1989-02-09

Family

ID=16343517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195581A Pending JPS6438727A (en) 1987-08-04 1987-08-04 Transistor array substrate for display

Country Status (1)

Country Link
JP (1) JPS6438727A (en)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474474A2 (en) * 1990-09-05 1992-03-11 Seiko Instruments Inc. Semiconductor light valve device and process for fabricating the same
EP0497980A1 (en) * 1990-04-27 1992-08-12 JAPAN as represented by DIRECTOR GENERAL, AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY Optical valve device
EP0530972A2 (en) * 1991-08-02 1993-03-10 Canon Kabushiki Kaisha Liquid crystal image display unit
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5315101A (en) * 1992-02-08 1994-05-24 U.S. Philips Corporation Method of manufacturing a large area active matrix array
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US5376979A (en) * 1990-12-31 1994-12-27 Kopin Corporation Slide projector mountable light valve display
US5444557A (en) * 1990-12-31 1995-08-22 Kopin Corporation Single crystal silicon arrayed devices for projection displays
US5528397A (en) * 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5574292A (en) * 1992-05-13 1996-11-12 Seiko Instruments Inc. Semiconductor device with monosilicon layer
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5633176A (en) * 1992-08-19 1997-05-27 Seiko Instruments Inc. Method of producing a semiconductor device for a light valve
US5661371A (en) * 1990-12-31 1997-08-26 Kopin Corporation Color filter system for light emitting display panels
US5734366A (en) * 1993-12-09 1998-03-31 Sharp Kabushiki Kaisha Signal amplifier, signal amplifier circuit, signal line drive circuit and image display device
US5743614A (en) * 1990-12-31 1998-04-28 Kopin Corporation Housing assembly for a matrix display
US5751261A (en) * 1990-12-31 1998-05-12 Kopin Corporation Control system for display panels
US5754155A (en) * 1995-01-31 1998-05-19 Sharp Kabushiki Kaisha Image display device
US5757445A (en) * 1990-12-31 1998-05-26 Kopin Corporation Single crystal silicon tiles for display panels
US6187605B1 (en) * 1992-08-19 2001-02-13 Seiko Instruments Inc. Method of forming a semiconductor device for a light valve
US6317175B1 (en) 1990-12-31 2001-11-13 Kopin Corporation Single crystal silicon arrayed devices with optical shield between transistor and substrate
US6320568B1 (en) 1990-12-31 2001-11-20 Kopin Corporation Control system for display panels
US6521940B1 (en) 1990-12-31 2003-02-18 Kopin Corporation High density electronic circuit modules
US6593978B2 (en) 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US6608654B2 (en) 1992-09-11 2003-08-19 Kopin Corporation Methods of fabricating active matrix pixel electrodes
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0497980A1 (en) * 1990-04-27 1992-08-12 JAPAN as represented by DIRECTOR GENERAL, AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY Optical valve device
KR100299024B1 (en) * 1990-09-05 2001-10-22 핫토리 쥰이치 Light Valve Substrate Semiconductor Device
EP0474474A2 (en) * 1990-09-05 1992-03-11 Seiko Instruments Inc. Semiconductor light valve device and process for fabricating the same
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5728591A (en) * 1990-11-15 1998-03-17 Seiko Instruments Inc. Process for manufacturing light valve device using semiconductive composite substrate
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5486708A (en) * 1990-11-15 1996-01-23 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5376979A (en) * 1990-12-31 1994-12-27 Kopin Corporation Slide projector mountable light valve display
US6320568B1 (en) 1990-12-31 2001-11-20 Kopin Corporation Control system for display panels
US5362671A (en) * 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US6919935B2 (en) 1990-12-31 2005-07-19 Kopin Corporation Method of forming an active matrix display
US5377031A (en) * 1990-12-31 1994-12-27 Kopin Corporation Single crystal silicon tiles for liquid crystal display panels including light shielding layers
US5438241A (en) * 1990-12-31 1995-08-01 Kopin Corporation Single crystal silicon arrayed devices for display panels
US5444557A (en) * 1990-12-31 1995-08-22 Kopin Corporation Single crystal silicon arrayed devices for projection displays
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US6593978B2 (en) 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US6521940B1 (en) 1990-12-31 2003-02-18 Kopin Corporation High density electronic circuit modules
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US6486929B1 (en) 1990-12-31 2002-11-26 Kopin Corporation Bonded layer semiconductor device
US5661371A (en) * 1990-12-31 1997-08-26 Kopin Corporation Color filter system for light emitting display panels
US5713652A (en) * 1990-12-31 1998-02-03 Kopin Corporation Slide projector mountable light valve display
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US6424020B1 (en) 1990-12-31 2002-07-23 Kopin Corporation High Density electronic circuit modules
US5743614A (en) * 1990-12-31 1998-04-28 Kopin Corporation Housing assembly for a matrix display
US5751261A (en) * 1990-12-31 1998-05-12 Kopin Corporation Control system for display panels
US6414783B2 (en) 1990-12-31 2002-07-02 Kopin Corporation Method of transferring semiconductors
US5757445A (en) * 1990-12-31 1998-05-26 Kopin Corporation Single crystal silicon tiles for display panels
US6317175B1 (en) 1990-12-31 2001-11-13 Kopin Corporation Single crystal silicon arrayed devices with optical shield between transistor and substrate
US6232136B1 (en) 1990-12-31 2001-05-15 Kopin Corporation Method of transferring semiconductors
US5530266A (en) * 1991-08-02 1996-06-25 Canon Kabushiki Kaisha Liquid crystal image display unit and method for fabricating semiconductor optical member
EP0530972A2 (en) * 1991-08-02 1993-03-10 Canon Kabushiki Kaisha Liquid crystal image display unit
US5827755A (en) * 1991-08-02 1998-10-27 Canon Kabushiki Kaisha Liquid crystal image display unit and method for fabricating semiconductor optical member
US5528397A (en) * 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5315101A (en) * 1992-02-08 1994-05-24 U.S. Philips Corporation Method of manufacturing a large area active matrix array
US5574292A (en) * 1992-05-13 1996-11-12 Seiko Instruments Inc. Semiconductor device with monosilicon layer
US5633176A (en) * 1992-08-19 1997-05-27 Seiko Instruments Inc. Method of producing a semiconductor device for a light valve
US6187605B1 (en) * 1992-08-19 2001-02-13 Seiko Instruments Inc. Method of forming a semiconductor device for a light valve
US6608654B2 (en) 1992-09-11 2003-08-19 Kopin Corporation Methods of fabricating active matrix pixel electrodes
WO1994010600A1 (en) * 1992-11-04 1994-05-11 Kopin Corporation Single crystal silicon tiles for display panels
US6054976A (en) * 1993-12-09 2000-04-25 Sharp Kabushiki Kaisha Signal amplifier, signal amplifier circuit, signal line drive circuit and image display device
US5734366A (en) * 1993-12-09 1998-03-31 Sharp Kabushiki Kaisha Signal amplifier, signal amplifier circuit, signal line drive circuit and image display device
US5754155A (en) * 1995-01-31 1998-05-19 Sharp Kabushiki Kaisha Image display device

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