JPS6429837A - Method for forming positive resist pattern - Google Patents

Method for forming positive resist pattern

Info

Publication number
JPS6429837A
JPS6429837A JP18537387A JP18537387A JPS6429837A JP S6429837 A JPS6429837 A JP S6429837A JP 18537387 A JP18537387 A JP 18537387A JP 18537387 A JP18537387 A JP 18537387A JP S6429837 A JPS6429837 A JP S6429837A
Authority
JP
Japan
Prior art keywords
alkyl group
resist material
polymer
lower alkyl
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18537387A
Other languages
Japanese (ja)
Inventor
Kouzaburou Matsumura
Toru Kiyota
Tsuneko Nakazawa
Yoshitaka Tsutsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Priority to JP18537387A priority Critical patent/JPS6429837A/en
Publication of JPS6429837A publication Critical patent/JPS6429837A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Abstract

PURPOSE:To improve the sensitivity and the resolution and the dry-etching durability of a resist material by using a polymer having a specified repeating unit as the resist material. CONSTITUTION:The resist material comprises the polymer having the repeating unit shown by the formula wherein X is halogen atom, R is hydrogen atom or a lower alkyl group, (n) is an integer of 20-20,000. The polymer is obtd. by homopolymerizing an alpha-halogen substd. acrylic acid ester, and the halogen atom substd. at alpha-position of said ester is preferably fluorine, chlorine or bromine atom, and the substituent group of a benzene ring is hydrogen atom or a lower alkyl group, and the lower alkyl group is preferably 1-5C alkyl group. Thus, the resist material having the high sensitivity and resolution and the excellent dye-etching durability is obtd.
JP18537387A 1987-07-27 1987-07-27 Method for forming positive resist pattern Pending JPS6429837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18537387A JPS6429837A (en) 1987-07-27 1987-07-27 Method for forming positive resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18537387A JPS6429837A (en) 1987-07-27 1987-07-27 Method for forming positive resist pattern

Publications (1)

Publication Number Publication Date
JPS6429837A true JPS6429837A (en) 1989-01-31

Family

ID=16169666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18537387A Pending JPS6429837A (en) 1987-07-27 1987-07-27 Method for forming positive resist pattern

Country Status (1)

Country Link
JP (1) JPS6429837A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002021213A3 (en) * 2000-11-22 2002-06-06 Shipley Co Llc Novel polymers and photoresist compositions for short wavelength imaging
US6593058B1 (en) 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US7132214B2 (en) 2000-09-08 2006-11-07 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593058B1 (en) 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US7132214B2 (en) 2000-09-08 2006-11-07 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
WO2002021213A3 (en) * 2000-11-22 2002-06-06 Shipley Co Llc Novel polymers and photoresist compositions for short wavelength imaging

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