JPS6427258A - Semiconductor memory and manufacture thereof - Google Patents

Semiconductor memory and manufacture thereof

Info

Publication number
JPS6427258A
JPS6427258A JP62085721A JP8572187A JPS6427258A JP S6427258 A JPS6427258 A JP S6427258A JP 62085721 A JP62085721 A JP 62085721A JP 8572187 A JP8572187 A JP 8572187A JP S6427258 A JPS6427258 A JP S6427258A
Authority
JP
Japan
Prior art keywords
regions
insulating film
film
shaped
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62085721A
Other languages
Japanese (ja)
Inventor
Toshiyuki Iwabuchi
Akira Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP62085721A priority Critical patent/JPS6427258A/en
Publication of JPS6427258A publication Critical patent/JPS6427258A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To form a peripheral circular circuit as CMOS constitution by shaping structure in which a transistor for a cell and the peripheral circuit are formed to a semiconductor substrate to which an epitaxial layer is not grown. CONSTITUTION:A first insulating film 23 as a cell isolation region is formed to the bottom of a trench 15, a second insulating film 29 as a capacitor insulating film is shaped onto the sidewall of the lower section of the film 23, and a capacitor is formed by a first conductive film 27, the second insulating film 29 and insular regions 17 in an silicon substrate 11. A third insulating film 47 as a gate insulating film is shaped onto the upper sidewall of the trench 15, and second conductive films 49 are formed into the upper region of the trench 15 on the upper side of the film 47 as word lines. Transistor structure is shaped by source regions as first semiconductor regions 39 formed into specified regions in the insular regions 17, drain regions as second semiconductor regions 35 shaped into regions on the top face sides of the insular regions 17 and the word lines 49 as gate electrodes. Accordingly, a peripheral circuit can be formed as CMOS constitution.
JP62085721A 1987-04-09 1987-04-09 Semiconductor memory and manufacture thereof Pending JPS6427258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62085721A JPS6427258A (en) 1987-04-09 1987-04-09 Semiconductor memory and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62085721A JPS6427258A (en) 1987-04-09 1987-04-09 Semiconductor memory and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6427258A true JPS6427258A (en) 1989-01-30

Family

ID=13866705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62085721A Pending JPS6427258A (en) 1987-04-09 1987-04-09 Semiconductor memory and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6427258A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8072624B2 (en) 2001-07-31 2011-12-06 Canon Kabushiki Kaisha Image processing device, method, and program with editing, range setting, and printing screen conditionally displayed when application is started

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8072624B2 (en) 2001-07-31 2011-12-06 Canon Kabushiki Kaisha Image processing device, method, and program with editing, range setting, and printing screen conditionally displayed when application is started

Similar Documents

Publication Publication Date Title
JPS6450554A (en) Manufacture of complementary semiconductor device
JPS6437865A (en) Semiconductor memory device and its manufacture
KR850002680A (en) Semiconductor Memory and Manufacturing Method
JPS6453577A (en) Nonvolatile semiconductor device and manufacture thereof
KR840006873A (en) Semiconductor memory
EP0052989A3 (en) Method of fabricating a semiconductor device
KR860700370A (en) Integrated circuit device and its manufacturing method
KR860003658A (en) Manufacturing Method of Semiconductor Memory Device
JPS6489560A (en) Semiconductor memory
JPS6427258A (en) Semiconductor memory and manufacture thereof
JPS57167675A (en) Semiconductor device
JPS5521102A (en) Semiconductor memory cell
JPS6410673A (en) Non volatile semiconductor memory device
JPS56125875A (en) Semiconductor integrated circuit device
JPS57132354A (en) Semiconductor memory storage
JPS6425465A (en) Semiconductor storage device
JPS55132062A (en) Semiconductor memory device
JPS6447068A (en) Semiconductor integrated circuit device and manufacture thereof
JPS56126978A (en) Manufacture of junction type field effect transistor
JPS57111043A (en) Semiconductor integrated circuit and manufacture thereof
JPS56146281A (en) Manufacture of semiconductor integrated circuit
JPS5636165A (en) Insulated gate type field-effect transistor
KR0136919B1 (en) Dynamic ram cell and manufacture therefor
JPS6437059A (en) Manufacture of semiconductor device
JPS5685855A (en) Semiconductor memory element