JPS63288009A - Wafer and method of controlling wafer treatment process - Google Patents
Wafer and method of controlling wafer treatment processInfo
- Publication number
- JPS63288009A JPS63288009A JP12123387A JP12123387A JPS63288009A JP S63288009 A JPS63288009 A JP S63288009A JP 12123387 A JP12123387 A JP 12123387A JP 12123387 A JP12123387 A JP 12123387A JP S63288009 A JPS63288009 A JP S63288009A
- Authority
- JP
- Japan
- Prior art keywords
- mark
- wafer
- marks
- treatment
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000007726 management method Methods 0.000 claims description 4
- 238000004886 process control Methods 0.000 abstract description 5
- 238000001259 photo etching Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004621 scanning probe microscopy Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、集積回路(ICと略す)を形成する技術に係
り、特に処理工程管理を円滑化するウェハとその方法工
程管理方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a technology for forming integrated circuits (abbreviated as IC), and particularly to a wafer and a process control method therefor that facilitate process control.
従来のウニハエ程管理マークは、特開昭58−4841
4号に記載のように、ウェハの周辺部に予め処理工程の
マークを印字しておき、工程が終了するとその該当する
マークの近傍にドツトを印字して工程終了を履歴してい
た。The conventional sea urchin fly control mark is JP-A-58-4841.
As described in No. 4, marks of processing steps are printed in advance on the periphery of the wafer, and when the process is completed, a dot is printed near the corresponding mark to record the completion of the process.
この方法では、形の残らない工程の履歴を記録するため
には、その工程においてマークを形成する装置を新たに
必要とし、コストが増大する。また、マークウェハ周辺
部にあるため、処理工程によってはマークを隠したり、
相対的に周辺部に多いパターン欠陥によってマークを変
形したり、最悪の場合はマークを消去する恐れがあった
6〔発明が解決しようとする問題点〕
上記従来技術はこれらの問題に対処する配慮がされてお
らず、円滑な工程管理を阻害する問題があった。In this method, in order to record the history of a process that leaves no trace, a new device for forming marks in that process is required, which increases costs. Also, since the mark is located on the periphery of the wafer, depending on the processing process, the mark may be hidden or
Pattern defects, which are relatively common in the periphery, may deform the mark or, in the worst case, erase the mark.6 [Problems to be Solved by the Invention] The above-mentioned prior art takes into account consideration to deal with these problems. There was a problem in that the process management was not carried out properly, which hindered smooth process control.
本発明の目的は、これらの従来法の欠点を除き。The purpose of the present invention is to eliminate these drawbacks of conventional methods.
円滑な工程管理を可能としたウェハとその管理方法を提
供することにある。The object of the present invention is to provide a wafer and its management method that enable smooth process control.
上記目的は、ウェハの所定の位置に予め処理をする全工
程あるいはその一部の工程のマーク(工程マークと略称
)をウェハ上に刻みつけておき、処理を終了したマーク
(終了マークと略称)を。The above purpose is to inscribe marks (abbreviated as process marks) for all or part of the processing steps on the wafer in advance at predetermined positions on the wafer, and mark marks (abbreviated as end marks) that indicate the completion of processing on the wafer. .
相当する工程マークの近傍あるいは、直上に重ねて刻み
つけることで達成される。This is accomplished by carving in the vicinity of or directly above the corresponding process mark.
バターニングを伴なう工程、たとえばホトエツチングで
は、被エツチング材料を所定の部分に残存させるかある
いは除去するかによって、その工程を終了したか否かが
識別できる。識別するには。In a process involving buttering, such as photoetching, whether the process has been completed can be determined by whether the material to be etched remains in a predetermined area or is removed. To identify.
光学vAvIt航や、走査電子顕微鏡などを用いること
ができる。被エツチング材料が極めて薄い場合などは、
上記の二つの顕微法では識別できない場合価できる。An optical microscope, a scanning electron microscope, or the like can be used. When the material to be etched is extremely thin,
It can be used in cases where the above two microscopic methods cannot distinguish between them.
以下、本発明の一実施例を第1図により説明する。シリ
コンウェハ1に集積回路(IC)を形成するには、通常
長方形のチップ2を複数個配列する。さらにこれらのチ
ップ2を最終的には切り離す必要があるので、l150
〜100μmの通称スクライブ領域3を形成する。工程
マーク4はこのスクライブ領域に形成すると、新たな領
域を必要とせず、ウェハの面積使用効率の低下を防げる
。An embodiment of the present invention will be described below with reference to FIG. To form an integrated circuit (IC) on a silicon wafer 1, a plurality of usually rectangular chips 2 are arranged. Furthermore, since it is necessary to ultimately separate these chips 2, l150
A so-called scribe region 3 of ~100 μm is formed. When the process mark 4 is formed in this scribe area, no new area is required, and a decrease in the efficiency of using the area of the wafer can be prevented.
工程マークは例えばウェハ処理の最も初期の段階でウェ
ハ1にホトエツチングで溝を形成する。The process mark is, for example, a groove formed by photo-etching on the wafer 1 at the earliest stage of wafer processing.
マークは単なる英文字、数字、日本文字だけでなく、バ
ーコードやその他所室の記号とすることもできる。基本
的にはパターンを形成すればよいので、いわゆるLOG
O8(局所酸化法)等の素子分離パターンや、フィール
ド酸化膜などの厚い絶縁膜を残す方法も同様に用いるこ
とができる。Marks can be not only simple English letters, numbers, and Japanese characters, but also bar codes and other room symbols. Basically, all you need to do is form a pattern, so the so-called LOG
An element isolation pattern such as O8 (local oxidation method) or a method of leaving a thick insulating film such as a field oxide film can be similarly used.
第2図に本発明の他の実施例を示す、既に第1図に示し
た実施例では、工程マーク4.処理マーりとも一対しか
形成されないので、ウェハ上にランダムに発生する欠陥
によってつぶれる可能性がある。このため1本実施例は
、工程マーク4と処理マーク5の対のマーク群6を、2
組形成したものである。このような構成によれば、一方
がつぶれても他方が残り、信頼性を向上することができ
る。欠陥密度が高い場合は、それに応じて2つ以上マー
ク群6のセットを形成すればよい。FIG. 2 shows another embodiment of the invention; in the embodiment already shown in FIG. 1, process marks 4. Since only one pair of processing marks is formed, there is a possibility of crushing due to defects randomly occurring on the wafer. Therefore, in this embodiment, the mark group 6 of the process mark 4 and the processing mark 5 is divided into two
It is made up of a set. According to such a configuration, even if one is crushed, the other remains, improving reliability. When the defect density is high, a set of two or more mark groups 6 may be formed accordingly.
また第3図に示す実施例では、一般に狭いスクライブ領
域3ではなく、チップ2を配列する領域の一部にマーク
群6を挿入したものである。これは十分な面積が確保で
きるので設計に自由度が増す。Further, in the embodiment shown in FIG. 3, the mark group 6 is inserted not in the generally narrow scribe area 3 but in a part of the area where the chips 2 are arranged. This increases the degree of freedom in design since a sufficient area can be secured.
一方、平面形状に変化を与えられるホトエツチング工程
などは、外観形状を検出することによって容易にマーク
を検出できるが、イオン打込みのように一般に全面に打
込み新たなパターンを形成しない場合には、第4図、第
5図に示す実施例のように行う、すなわち、ウェハ1上
に、熱酸化S i Ox膜で代表される阻止膜7を形成
し、所定の部分を除去する。この後、イオン打込みによ
って、イオン打込み層8を形成する。すると、イオンが
打込まれたJl18と、打込まれない層9が形成され、
この違いを電子線誘起電流(EBIC)や、光走査顕微
!!(SPM)エリプソメトリ−で検出すればよい、E
BICやSPMは、基本的にウェハ1のSi基板表面部
で誘起した電子や正孔が流れる領域や速度がSi基板表
面や内部の不純物の111!や濃度によって異なるのを
利用して打込み層8と無打込み層9の違いを検出するも
のである。On the other hand, in photoetching processes that change the planar shape, marks can be easily detected by detecting the external shape. The process is carried out as in the embodiment shown in FIG. 5, that is, a blocking film 7 typified by a thermally oxidized SiOx film is formed on the wafer 1, and a predetermined portion is removed. Thereafter, an ion implantation layer 8 is formed by ion implantation. Then, a layer 18 in which ions are implanted and a layer 9 in which ions are not implanted are formed.
This difference can be seen using electron beam induced current (EBIC) and optical scanning microscopy! ! (SPM) Can be detected by ellipsometry, E
Basically, in BIC and SPM, the region and velocity of the flow of electrons and holes induced on the surface of the Si substrate of the wafer 1 are 111! The difference between the implanted layer 8 and the non-implanted layer 9 is detected by utilizing the difference in density and concentration.
打込み層8と無打込み層9がp−n接合を形成している
場合には、EBICやSPMによらなくても通常の走査
型電子顕微鏡(SEM)の2次電子像を検出することで
違いが判別できる。阻止膜7が厚すぎて電子線が十分侵
入できないときは、第3図に示すように、検出に必要な
領域の阻止[7を除去すればよい、こうすると表面形態
は打込み層8と無打込層9とでほとんど同じになり、検
出感度が増す。If the implanted layer 8 and the non-implanted layer 9 form a p-n junction, the difference can be detected by detecting the secondary electron image with a normal scanning electron microscope (SEM) without using EBIC or SPM. can be determined. If the blocking film 7 is too thick and the electron beam cannot penetrate sufficiently, the blocking film 7 in the area necessary for detection can be removed, as shown in FIG. It becomes almost the same with the mixed layer 9, and the detection sensitivity increases.
また、表面状態がほとんど同じ場合、エリブソメトリー
によって結晶の状態を検出できるので、イオン打込み量
が大のときはEBIC,SPM。In addition, if the surface conditions are almost the same, the crystal condition can be detected by ellipsometry, so when the ion implantation amount is large, EBIC and SPM are used.
SEMなどを用いる必要がない。There is no need to use SEM etc.
本発明によれば、ウェハの処理工程を逐一ウェハに刻み
つけ、これを効果的に検出できるので、特にウェハ毎に
処理が異なる場合に工程管理が簡略化できる。According to the present invention, each wafer processing step can be marked on the wafer and detected effectively, so that process management can be simplified, especially when the processing is different for each wafer.
第1図〜第3図は本発明の実施例の平面図、第4図7第
5図は本発明の他の実施例の断面図である。
1・・・ウェハ、2・・・チップ、3・・・スクライブ
領域。
4・・・工程マーク、5・・・処理マーク、6由マ一ク
群、7・・・阻止膜、8・・・イオン打込み層、9・・
・無打込みFy5゜
茅 II2]
茅2図
6 マーク針1 to 3 are plan views of an embodiment of the invention, and FIGS. 4, 7, and 5 are sectional views of another embodiment of the invention. 1... Wafer, 2... Chip, 3... Scribe area. 4... Process mark, 5... Processing mark, 6 different mark groups, 7... Blocking film, 8... Ion implantation layer, 9...
・Non-striking Fy5゜Kaya II2] Kaya 2 Figure 6 Mark needle
Claims (1)
させたウェハ。 2、所定の全工程あるいはその一部の工程を、該工程を
処理する以前に予め刻みつけた第1項記載のウェハ。 3、処理を終了した工程の履歴をマークとして残存させ
た第2項記載のウェハ。 4、上記マークを、該ウェハの所定の位置、あるいは、
スクライブ領域に残存させた第1項乃至第3項記載のウ
ェハ。 5、所定の処理履歴を検出可能なマークを予めウェハ上
に形成する工程と、上記マークを所定の処理段階毎に管
理する工程を含むウェハ処理工程管理方法。[Claims] 1. A wafer on which a mark remains that allows the history of predetermined processing to be detected. 2. The wafer according to item 1, on which all or some of the predetermined steps are pre-engraved before processing the steps. 3. The wafer according to item 2, in which the history of the completed process remains as a mark. 4. Place the mark at a predetermined position on the wafer, or
The wafer according to any one of items 1 to 3, remaining in the scribe area. 5. A wafer processing process management method including a step of forming in advance on a wafer a mark capable of detecting a predetermined processing history, and a step of managing the mark at each predetermined processing stage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12123387A JPS63288009A (en) | 1987-05-20 | 1987-05-20 | Wafer and method of controlling wafer treatment process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12123387A JPS63288009A (en) | 1987-05-20 | 1987-05-20 | Wafer and method of controlling wafer treatment process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63288009A true JPS63288009A (en) | 1988-11-25 |
Family
ID=14806207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12123387A Pending JPS63288009A (en) | 1987-05-20 | 1987-05-20 | Wafer and method of controlling wafer treatment process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63288009A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5820679A (en) * | 1993-07-15 | 1998-10-13 | Hitachi, Ltd. | Fabrication system and method having inter-apparatus transporter |
JP2002170784A (en) * | 2000-12-01 | 2002-06-14 | Denso Corp | Silicon carbide semiconductor device and manufacturing method thereof |
JP2008042065A (en) * | 2006-08-09 | 2008-02-21 | Fujitsu Ltd | Semiconductor wafer, and test method of the same |
-
1987
- 1987-05-20 JP JP12123387A patent/JPS63288009A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5820679A (en) * | 1993-07-15 | 1998-10-13 | Hitachi, Ltd. | Fabrication system and method having inter-apparatus transporter |
US5858863A (en) * | 1993-07-15 | 1999-01-12 | Hitachi, Ltd. | Fabrication system and method having inter-apparatus transporter |
US6099598A (en) * | 1993-07-15 | 2000-08-08 | Hitachi, Ltd. | Fabrication system and fabrication method |
US7062344B2 (en) | 1993-07-15 | 2006-06-13 | Renesas Technology Corp. | Fabrication system and fabrication method |
US7310563B2 (en) | 1993-07-15 | 2007-12-18 | Renesas Technology Corp. | Fabrication system and fabrication method |
US7392106B2 (en) | 1993-07-15 | 2008-06-24 | Renesas Technology Corp. | Fabrication system and fabrication method |
US7603194B2 (en) | 1993-07-15 | 2009-10-13 | Renesas Technology Corp. | Fabrication system and fabrication method |
JP2002170784A (en) * | 2000-12-01 | 2002-06-14 | Denso Corp | Silicon carbide semiconductor device and manufacturing method thereof |
JP2008042065A (en) * | 2006-08-09 | 2008-02-21 | Fujitsu Ltd | Semiconductor wafer, and test method of the same |
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