JPS63259994A - Thin film light emitting device - Google Patents
Thin film light emitting deviceInfo
- Publication number
- JPS63259994A JPS63259994A JP62092550A JP9255087A JPS63259994A JP S63259994 A JPS63259994 A JP S63259994A JP 62092550 A JP62092550 A JP 62092550A JP 9255087 A JP9255087 A JP 9255087A JP S63259994 A JPS63259994 A JP S63259994A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- film
- thin film
- insulating layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 27
- 239000010408 film Substances 0.000 claims description 45
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 238000002161 passivation Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004566 IR spectroscopy Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［技術分野］
本発明は薄膜発光素子に関し、詳しくは、ＥＬディスプ
レイパネルなどに用いられる薄膜ＥＬ素子を特定のパッ
シベーション材料で密閉した薄膜発光素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a thin film light emitting device, and more particularly to a thin film light emitting device in which a thin film EL device used in an EL display panel or the like is sealed with a specific passivation material.
［従来技術］
電界印加によって材料の色が変化する発光層を有した薄
膜ＥＬ（エレクトロルミネッセンス）素子はテレビ、駅
・空港などの案内、○Ａ機器、デジタル時計用等の表示
装置として広く利用されている。そして、薄膜ＥＬ素子
を実用的な表示装置として用いるためには、薄膜ＥＬ素
子にその表示面を除いてできるだけ強固な保護膜（パッ
シベーション膜）を形成させることが必要である。[Prior art] Thin-film EL (electroluminescence) elements, which have a light-emitting layer whose material changes color when an electric field is applied, are widely used as display devices for televisions, information at stations and airports, ○A equipment, digital watches, etc. ing. In order to use the thin film EL element as a practical display device, it is necessary to form a protective film (passivation film) as strong as possible on the thin film EL element except for the display surface.
薄膜ＥＬ素子のパッシベーション対策としては、従来（
ｉ）素子の前面（表示面）にガラス基板を設けてＥＬ出
射面とし背面に樹脂材を被覆した構造、（ｎ）背面のガ
ラス基板を素子塔載基板に張り付け、それら素子と背面
ガラス基板との間隙にオイルを封入した構造などが用い
られている。だが、前記（ｉ）の樹脂コートによった場
合には、製作が容易である反面防湿性が不十分であり、
湿気を完全に遮断することができないという欠陥がある
。また、前記（ｉｔ）のオイルシールによった場合には
、絵素中に絶縁破壊が生じた際にオイルの存在によって
破砕点の拡大が抑えられるという利点がある反面、パネ
ル作製工程が複雑かつ多工程となり、製造上もパネルの
厚さが厚くなり重量も増すといった欠陥がある。As a passivation measure for thin film EL elements, conventional methods (
i) A structure in which a glass substrate is provided on the front surface (display surface) of the element and used as an EL emission surface and the back surface is coated with a resin material, (n) The back glass substrate is attached to the element mounting substrate, and these elements and the back glass substrate are attached. A structure in which oil is sealed in the gap is used. However, in the case of the above resin coating (i), although it is easy to manufacture, the moisture proofing property is insufficient.
The drawback is that it cannot completely block out moisture. In addition, in the case of using the oil seal described in (it) above, there is an advantage that the expansion of the fracture point is suppressed by the presence of oil when dielectric breakdown occurs in the pixel, but on the other hand, the panel manufacturing process is complicated and It requires multiple steps, and has drawbacks in manufacturing as well, such as increased panel thickness and weight.
こうしたことから、パッシベーション膜を５ｉ−Ｎ膜と
５Ｌ−Ｃ又はＣ（単体）との複合膜で構成することが提
案されている。この複合膜においては、５ｉ−Ｎ膜を防
湿性に寄与せしめ、５ｉ−Ｃ（又はＣ）膜を放熱性に寄
与せしめている。しかし、この複合膜の形成はその製膜
において原料ガスの交換を余儀無くされ、耐機械的損傷
においても問題点が残されている。For these reasons, it has been proposed that the passivation film be composed of a composite film of a 5i-N film and 5L-C or C (single substance). In this composite film, the 5i-N film contributes to moisture resistance, and the 5i-C (or C) film contributes to heat dissipation. However, the formation of this composite film necessitates the exchange of raw material gas during film formation, and problems remain in terms of mechanical damage resistance.
［目 的コ
本発明は上記のような欠陥並びに問題点を解消し、長期
的信頼性にすぐれた薄膜発光素子を提供するものである
。[Objective] The present invention eliminates the above defects and problems and provides a thin film light emitting device with excellent long-term reliability.
［構 成］
本発明の薄膜発光素子は、電界を加えたときに発光する
発光層と、この発光層に電界を印加する背面電極及び透
明電極と、少なくともこれら発光層と背面電極又は透明
電極のいずれか一方との間に絶縁層とが設けられたエレ
クトロルミネッセンス素子において、この素子を炭素原
子及び水素原子からなるアモルファス状炭素膜で密閉し
元ことを特徴としている。[Structure] The thin film light emitting device of the present invention includes a light emitting layer that emits light when an electric field is applied, a back electrode and a transparent electrode that apply an electric field to the light emitting layer, and at least a combination of the light emitting layer and the back electrode or the transparent electrode. An electroluminescent device having an insulating layer between the two is characterized in that the device is sealed with an amorphous carbon film made of carbon atoms and hydrogen atoms.
ちなみに、本発明者らは先にアモルファス状炭素膜、ダ
イヤモンド状炭素膜の製膜法について提案した（特願昭
６１−２９６６１２号）がこのアモルファス状特にダイ
ヤモンド状炭素膜がＥＬ素子のパッシベーション膜とし
ても有用であることを確めた０本発明はそれにをさらに
発展させる−ことによりなされたものである。Incidentally, the present inventors previously proposed a method for forming an amorphous carbon film and a diamond-like carbon film (Japanese Patent Application No. 61-296612). It has been confirmed that the present invention is also useful, and the present invention has been made by further developing it.
以下に本発明を添付の図面に従がいながら更に詳細に説
明する。The invention will be explained in more detail below with reference to the accompanying drawings.
本発明におけるＥＬ素子自体は従来のそれと何等相違し
ているところはなく、発光層１は透明電極２及び背面電
極３との間に設けられており、また、発光層１と透明電
極２との間及び／又は発光層１と背面電極３との間には
第一絶縁層４１．第二絶縁層４２が設けられている。こ
こで第一絶縁層４１、第二絶縁層４２はともに設けられ
ていてもよいが、こうした絶縁層は少なくともどちらか
の一方（絶縁層４１、絶縁層４２のいずれか）であって
もよいが、その場合は、背面電極３側の第二絶縁層４２
が設けられるようにしておくのが望ましい。これは後に
設けられるパッシベーション膜７のＥＬ素子への密着性
をより良好ならしめるからである。The EL element itself of the present invention is not different from conventional ones; the light-emitting layer 1 is provided between the transparent electrode 2 and the back electrode 3; and/or between the light emitting layer 1 and the back electrode 3 is a first insulating layer 41. A second insulating layer 42 is provided. Here, both the first insulating layer 41 and the second insulating layer 42 may be provided, but the insulating layer may be at least one of them (either the insulating layer 41 or the insulating layer 42). , in that case, the second insulating layer 42 on the back electrode 3 side
It is desirable to have this in place. This is because the adhesion of the passivation film 7 provided later to the EL element is improved.
図面中、５はガラス又はフレキシブルなプラスチックの
ような透明基板、６は交流電源（信号電圧）を表わして
いる。信号電圧の一方は透明電極２に接続されており、
他方は背面電極３に接続されている。In the drawing, 5 represents a transparent substrate such as glass or flexible plastic, and 6 represents an AC power source (signal voltage). One of the signal voltages is connected to the transparent electrode 2,
The other end is connected to the back electrode 3.
本発明においては、かかる構造を有する薄膜ＥＬ素子の
基板５側を残して、炭素原子及び水素原子からなるアモ
ルファス材料（アモルファス状炭素膜）がＥＬ素子のパ
ッシベーション膜７として形成される。ここで形成され
るパッシベーション膜７は、望ましくは、炭素原子のＳ
Ｐ２混成軌道とＳＦ３の混成軌道とを形成した原子内結
合状態の混在したダイヤモンド状炭素膜である。In the present invention, an amorphous material (amorphous carbon film) made of carbon atoms and hydrogen atoms is formed as the passivation film 7 of the EL element except for the substrate 5 side of the thin film EL element having such a structure. The passivation film 7 formed here is desirably made of S of carbon atoms.
This is a diamond-like carbon film containing a mixture of intraatomic bonding states that form P2 hybrid orbitals and SF3 hybrid orbitals.
この結晶ダイヤモンドに近い性質をもつアモルファス材
料の合成法（形成法）の−例をプラズマＣＶＤ法により
説明すれば次のとおりである。An example of a method for synthesizing (forming) an amorphous material having properties similar to those of crystalline diamond using a plasma CVD method is as follows.
先ず、平行平板型ＣＶＤ装置を用い、セルフバイアスの
ため正イオンの衝撃が促進されるＲＦ給電側に基板（こ
の基板は第１図の基板５とは当然違ったものである）を
セットする。原料ガスには炭化水素（ＣＨ，、Ｃ２Ｈ，
、Ｃ，Ｈ，、Ｃ。First, using a parallel plate CVD apparatus, a substrate (this substrate is naturally different from the substrate 5 in FIG. 1) is set on the RF power supply side where positive ion bombardment is promoted due to self-bias. Hydrocarbons (CH, , C2H,
,C,H,,C.
Ｈｌ。など）と水素との混合を用いる。このようにして
、平行平板電極間に高周波電界（１３，５６ＭＨｚ）を
印加するとグロー放電が発生し１Ｍ料ガスはラジカルと
イオンとに分解され反応し、基板上に炭素原子と水素原
子とからなるアモルファス材料が堆積する。なお、反応
条件は表−１のとおりである。Hl. etc.) and hydrogen. In this way, when a high-frequency electric field (13.56 MHz) is applied between the parallel plate electrodes, a glow discharge occurs, and the 1M source gas is decomposed into radicals and ions and reacts, forming carbon atoms and hydrogen atoms on the substrate. Amorphous material is deposited. Note that the reaction conditions are as shown in Table-1.
表−１
このようにして製膜されたダイヤモンド状炭素膜はＸ−
ｒａｙ及び電子回折分析よりアモルファス状態（ａ−Ｃ
：Ｈ）であり、更に、ＩＲ吸収法及びラマン分光法によ
る分析の結果、炭素原子はＳｒ２の混成軌道とＳｒ３の
混成軌道との形成した原子間結合状態が混在しているこ
とが明らかとなった。前記のＩＲ吸収、ラマン分光の測
定結果は第２図、第３図に示したとおりであり、また、
製膜されたダイヤモンド状炭素膜の物性は表−２のとお
りである。Table-1 The diamond-like carbon film formed in this way is
Ray and electron diffraction analysis revealed that the amorphous state (a-C
:H), and furthermore, as a result of analysis by IR absorption method and Raman spectroscopy, it was revealed that the carbon atom has a mixed state of interatomic bonding formed by the hybrid orbital of Sr2 and the hybrid orbital of Sr3. Ta. The measurement results of the above-mentioned IR absorption and Raman spectroscopy are as shown in FIGS. 2 and 3, and
The physical properties of the formed diamond-like carbon film are shown in Table 2.
表−２
表−２の結果を含めた上記試験から、本発明者らはＲＦ
比出力大きく、圧力が低いほど得られた膜の比抵抗値及
び硬度の増加することも確めている。、また本発明者ら
は、同時に、前記原料ガスを用いてのイオンビーム法に
よってもプラズマＣＶＤ法よりは幾分劣るものの良質の
ダイヤモンド状炭素膜が製膜しうろことも確めている。Table 2 From the above tests including the results in Table 2, the inventors have determined that RF
It has also been confirmed that the greater the specific power and the lower the pressure, the greater the specific resistance and hardness of the resulting membrane. At the same time, the present inventors have also confirmed that a diamond-like carbon film of good quality can be formed by the ion beam method using the above-mentioned raw material gas, although it is somewhat inferior to the plasma CVD method.
このような性状をもつアモルファス状炭素膜はＥＬ素子
のパッシベーション材料として極めて有効である。即ち
、ＥＬ素子のパッシベーション材料として必要な条件は
、第１に耐湿性にすぐれていること、第２に電気的に不
導体であること、第３に熱伝導性にすぐれていること等
である。炭素原子及び水素原子からなるアモルファス状
炭素膜（特に炭素原子のｓｐ”とｓｐ’結合を主体とし
たダイヤモンド状炭素膜）はこうした条件を充足してお
り、加えて、アモルファス状炭素膜は化学的に安定で耐
薬品性にもすぐれているためである。An amorphous carbon film having such properties is extremely effective as a passivation material for EL elements. In other words, the necessary conditions for a passivation material for an EL element are: first, it must have excellent moisture resistance, second, it must be electrically nonconductive, and third, it must have excellent thermal conductivity. . An amorphous carbon film composed of carbon atoms and hydrogen atoms (especially a diamond-like carbon film mainly composed of sp" and sp' bonds of carbon atoms) satisfies these conditions. In addition, an amorphous carbon film is chemically This is because it is stable and has excellent chemical resistance.
実際に第１図に示したような本発明の薄膜発光素子をつ
くるには、基板５上のＩＴＯ，Ｚｎ○： Ａｎ 、Ｚｎ
Ｏ： Ｓｉ、ＳｎＯ，： Ｓｂなどをスパッタリング法
、イオンブレーティング法、蒸着法、ＭＯＣＶＤ法等に
より数１００人から１μｍくらいまで堆積させて透明電
極２を形成する。In order to actually produce the thin film light emitting device of the present invention as shown in FIG.
The transparent electrode 2 is formed by depositing O: Si, SnO, Sb, etc. to a thickness of about 1 μm by sputtering, ion blating, vapor deposition, MOCVD, or the like.
次に、この透明電極２上にＢＮ、ＡＱＮ。Next, BN and AQN are placed on this transparent electrode 2.
Ｓｉ、Ｎ４．Ｙ、Ｏ，、Ｓｉｎ、、ＡＱｘＯ，、Ｔａ、
Ｏｓ。Si, N4. Y,O,,Sin,,AQxO,,Ta,
Os.
Ｔｉｅ、、ＺｒＯ□など）をスパッタリング法、蒸着法
、ＣＶＤ法などにより数１００人〜１μｍくらいまで好
ましくは５００〜３０００人厚に堆積させて第一絶縁層
４１を形成する。この上にＳｒＳ：Ｃｅ。Tie, ZrO□, etc.) is deposited to a thickness of several 100 to 1 μm, preferably 500 to 3000, by sputtering, vapor deposition, CVD, etc., to form the first insulating layer 41. On top of this is SrS:Ce.
ＣａＳ ： Ｅｕ、５ｒＳｅ： Ｃｏ、ＺｎＳ：Ｍｎな
どからなる発光層１をスパッタリング法、蒸着法等によ
り数１０００人から数μｍ厚に積層する。この発光層１
上に第二絶縁層４２を第一絶縁層４１と同様な材料、方
法で形成する。第二絶縁層の厚さは数１００人〜数μＩ
好ましくはＯ０１〜１μｍ程度である。更に、第二絶縁
層４２上に高導電材料（Ａｎ。A light emitting layer 1 made of CaS:Eu, 5rSe:Co, ZnS:Mn, etc. is laminated to a thickness of several thousand to several micrometers by sputtering, vapor deposition, or the like. This light emitting layer 1
A second insulating layer 42 is formed thereon using the same material and method as the first insulating layer 41. The thickness of the second insulating layer is several hundred to several μI
Preferably it is about 001 to 1 μm. Furthermore, a highly conductive material (An.
ＮｉＣｒ、Ｍｏ、ＩＴＯなど）を蒸着法、スパッタリン
グ法、ＣＶＤ法などにより数１００人〜数１０００人厚
に堆積させて背面電極３を形成する。The back electrode 3 is formed by depositing NiCr, Mo, ITO, etc.) to a thickness of several hundred to several thousand layers by a vapor deposition method, a sputtering method, a CVD method, or the like.
透明電極２及び背面電極３には交流電源６につなげられ
るリード線が接続される。但し、一般的には透明電極２
の交流電源６への接続部はパッシベーション膜（アモル
ファス状炭素膜）７の外側に位置させることが多いので
、そうした場合には、パッシベーション膜７を形成させ
るのに先立って透明電極２に前記リード線を接続してお
かなくてもかまわない。また、絶縁層は第一絶縁層４１
．第二絶縁層４２がともに設けられても、それら一方が
設けられてもよい（片方にしか絶縁層が設けられない場
合は上部第二絶縁層４２を設ける方が望ましい）ことは
既に触れたとおりである。A lead wire connected to an AC power source 6 is connected to the transparent electrode 2 and the back electrode 3. However, generally transparent electrode 2
Since the connection part to the AC power source 6 is often located outside the passivation film (amorphous carbon film) 7, in such a case, the lead wire is connected to the transparent electrode 2 before forming the passivation film 7. There is no need to connect it. Further, the insulating layer is the first insulating layer 41
．． As already mentioned, both second insulating layers 42 may be provided, or one of them may be provided (if an insulating layer is provided only on one side, it is preferable to provide the upper second insulating layer 42). It is.
このようにして得られたＥＬ素子全体をアモルファス状
炭素膜７で覆うことにより本発明の薄膜発光素子が得ら
れる。アモルファス状炭素膜７の形成は前記のとおりＣ
ＶＤ法、イオンビーム法など行なわれ、その厚さは数１
００人〜数μｍくらいが適当である。The thin film light emitting device of the present invention is obtained by covering the entire EL device thus obtained with an amorphous carbon film 7. The amorphous carbon film 7 is formed as described above.
VD method, ion beam method, etc. are used, and the thickness is several 1
Approximately 0.00 to several μm is suitable.
なお、アモルファス状炭素膜７を設けるのに先立って、
そのアモルファス状炭素膜７のＥＬ素子への密着力を増
すために、バッファ一層として数１００人〜数１０００
人厚くらいのＳｉｏ、膜をプラズマＣＶＤ法などにより
ＥＬ素子全体に被覆させておくのが有利であり、このバ
ッファ一層の存在は第二絶縁層４２を設けなかったとき
には特に効果的である。Note that, prior to providing the amorphous carbon film 7,
In order to increase the adhesion of the amorphous carbon film 7 to the EL element, several hundred to several thousand layers are used as a buffer layer.
It is advantageous to cover the entire EL element with a SiO2 film approximately as thick as a human being by plasma CVD, and the presence of this buffer layer is particularly effective when the second insulating layer 42 is not provided.
本発明の薄膜発光素子はＥＬディスプレイパネルなどの
他にコンピュータ一端末器のディスプレイなどにも応用
しうる。The thin film light emitting device of the present invention can be applied not only to EL display panels but also to displays for computer terminals.
次に実施例を示す。Next, examples will be shown.
実施例１
ガラス基板上にＲＦスパッタリング法により下記条件で
ＩＴＯ透明電極を約１０００入庫に形成した。Example 1 About 1000 ITO transparent electrodes were formed on a glass substrate by RF sputtering under the following conditions.
その上にイオンブレーティング法により下記条でＣａＴ
ｉＯ３絶縁層（第一絶縁層）を約２０００入庫に形成し
た。On top of that, CaT is added using the ion blating method as follows.
An iO3 insulating layer (first insulating layer) was formed at approximately 2,000 times.
この第一絶縁層の上にＥＢ蒸着法により下記条件で５ｒ
Ｓｅ：Ｃｅ発光層を約１μｍ厚に作成した。On this first insulating layer, 5r was applied under the following conditions by EB evaporation method.
A Se:Ce light-emitting layer was created to have a thickness of about 1 μm.
この発光層の上に再びＣａ Ｔ ｘ Ｏａ絶縁層（第二
絶縁層）を前記と同様に作成した後、この第二絶縁層の
上に下記条件で背面電極としてＡ息を蒸着法によって約
１０００入庫に堆積させて薄膜ＥＬ素子をつくった。After forming a Ca T x Oa insulating layer (second insulating layer) on this light-emitting layer again in the same manner as above, about 1000% of A was deposited on this second insulating layer as a back electrode under the following conditions. A thin film EL device was fabricated by depositing it in a warehouse.
このようにしてつくった薄膜ＥＬ素子全体を覆うように
ＲＦプラズマＣＶＤ法によりアモルファス状カーボン層
を下記条件により約１μＩ堆積させて薄膜発光素子を完
成させた。この薄膜発光素子は前記目的を十分達成しう
るものであった。An amorphous carbon layer of about 1 .mu.l was deposited by RF plasma CVD under the following conditions so as to cover the entire thin film EL device thus produced, thereby completing a thin film light emitting device. This thin film light emitting device was able to fully achieve the above objectives.
実施例２
ＥＬ素子の全体にプラズマＣＶＤ法により約２０００人
のＳｉｎ、膜をバッファ一層として形成し。Example 2 Approximately 2000 Si films were formed as a buffer layer over the entire EL element by plasma CVD.
この上にアモルファス状カーボン層を形成させるように
した以外は実施例１とまったく同様にして薄膜発光素子
を完成させた。この薄膜発光素子は、実施例１と同様、
前記目的を十分達成しうるものであった。A thin film light emitting device was completed in exactly the same manner as in Example 1 except that an amorphous carbon layer was formed thereon. Similar to Example 1, this thin film light emitting device has the following characteristics:
The above objective could be fully achieved.
［効 果］
本発明のパッシベーション膜（アモルファス状炭素膜）
を薄膜ＥＬ素子に適用した薄膜発光素子は、従来のもの
に比べて
（イ）パッシベーション膜が一度に大面積かつ薄膜で形
成できるため、大幅に製造工程の簡単化が行なえ量産性
が向上する。[Effect] Passivation film (amorphous carbon film) of the present invention
Compared to conventional thin-film EL devices, a thin-film light-emitting device employs the following: (a) The passivation film can be formed over a large area and as a thin film at one time, which greatly simplifies the manufacturing process and improves mass productivity.
（ロ） パッシベーション膜としてダイヤモンド状炭素
膜が使用されているため耐薬品性、耐湿性にすぐれ、更
に耐機械的損傷にもすぐれており、かつ、放熱性が良い
ことから薄膜発光素子の長期的信頼性を得ることができ
る、
などの効果がある。(b) Since a diamond-like carbon film is used as the passivation film, it has excellent chemical resistance, moisture resistance, and mechanical damage resistance.It also has good heat dissipation properties, so it is suitable for the long term of thin film light emitting devices. There are effects such as being able to gain reliability.
第１図は本発明に係る薄膜発光素子の代表的な一例の概
略図である。第２図及び第３図はダイヤモンド状炭素膜
のＩＲ吸収及びラマン分光の測定図である。
１・・・発光層 ２・・・透明電極３・・・背面電
極 ５・・・基 板６・・・交流電源
７・・・パッシベーション膜（アモルファス状炭素膜）
４１・・・第一絶縁層
４２・・・第二絶縁層FIG. 1 is a schematic diagram of a typical example of a thin film light emitting device according to the present invention. FIGS. 2 and 3 are measurement diagrams of IR absorption and Raman spectroscopy of the diamond-like carbon film. 1... Light emitting layer 2... Transparent electrode 3... Back electrode 5... Substrate 6... AC power supply 7... Passivation film (amorphous carbon film)
41... First insulating layer 42... Second insulating layer
Claims (2)
に電界を印加する背面電極及び透明電極と、少なくとも
これら発光層と背面電極又は透明電極のいずれか一方と
の間に絶縁層とが設けられたエレクトロルミネッセンス
素子において、この素子を炭素原子及び水素原子からな
るアモルファス状炭素膜で密閉したことを特徴とする薄
膜発光素子。1. A generation layer that emits light when an electric field is applied, a back electrode and a transparent electrode that apply an electric field to the light emitting layer, and an insulating layer provided between at least these light emitting layer and either the back electrode or the transparent electrode. 1. A thin film light-emitting device characterized in that the device is sealed with an amorphous carbon film made of carbon atoms and hydrogen atoms.
混成軌道とＳＰ＾３の混成軌道とを形成した原子間結合
状態の混在したダイヤモンド状炭素膜である特許請求の
範囲第１項記載の薄膜発光素子。2. The amorphous carbon film has SP^2 of carbon atoms.
2. The thin film light emitting device according to claim 1, which is a diamond-like carbon film in which interatomic bonding states forming a hybrid orbital and a SP^3 hybrid orbital are mixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62092550A JPS63259994A (en) | 1987-04-15 | 1987-04-15 | Thin film light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62092550A JPS63259994A (en) | 1987-04-15 | 1987-04-15 | Thin film light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63259994A true JPS63259994A (en) | 1988-10-27 |
Family
ID=14057509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62092550A Pending JPS63259994A (en) | 1987-04-15 | 1987-04-15 | Thin film light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63259994A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002117971A (en) * | 2000-08-04 | 2002-04-19 | Semiconductor Energy Lab Co Ltd | Luminescent device and its manufacturing method |
| US7279239B2 (en) | 2002-08-07 | 2007-10-09 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Laminating product including adhesion layer and laminate product including protective film |
| US7854640B2 (en) | 2000-08-04 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| JP2012094538A (en) * | 2002-01-24 | 2012-05-17 | Semiconductor Energy Lab Co Ltd | Manufacturing method for light-emitting device |
| JP2014123579A (en) * | 2005-11-02 | 2014-07-03 | Ifire Ip Corp | Electroluminescent display |
-
1987
- 1987-04-15 JP JP62092550A patent/JPS63259994A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002117971A (en) * | 2000-08-04 | 2002-04-19 | Semiconductor Energy Lab Co Ltd | Luminescent device and its manufacturing method |
| JP4566475B2 (en) * | 2000-08-04 | 2010-10-20 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| US7854640B2 (en) | 2000-08-04 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| JP2012094538A (en) * | 2002-01-24 | 2012-05-17 | Semiconductor Energy Lab Co Ltd | Manufacturing method for light-emitting device |
| JP2013175470A (en) * | 2002-01-24 | 2013-09-05 | Semiconductor Energy Lab Co Ltd | Light emitting device |
| US8779467B2 (en) | 2002-01-24 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having a terminal portion |
| US9312323B2 (en) | 2002-01-24 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having insulator between pixel electrodes and auxiliary wiring in contact with the insulator |
| US9627459B2 (en) | 2002-01-24 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device having sealing material |
| US7279239B2 (en) | 2002-08-07 | 2007-10-09 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Laminating product including adhesion layer and laminate product including protective film |
| JP2014123579A (en) * | 2005-11-02 | 2014-07-03 | Ifire Ip Corp | Electroluminescent display |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4686110A (en) | Method for preparing a thin-film electroluminescent display panel comprising a thin metal oxide layer and thick dielectric layer | |
| JPS60182692A (en) | Thin film el element and method of producing same | |
| US5306572A (en) | EL element comprising organic thin film | |
| FR2369640A1 (en) | ELECTROLUMINESCENT PANELS | |
| JPWO2004065656A1 (en) | ITO thin film, film forming method thereof, transparent conductive film, and touch panel | |
| JPS63259994A (en) | Thin film light emitting device | |
| JP3535659B2 (en) | Manufacturing method of organic EL device | |
| JPH0714678A (en) | El element | |
| JPS61224290A (en) | Thin film el element | |
| JPH09146707A (en) | Glass touch panel | |
| JPS63190294A (en) | Electroluminescence device | |
| JPS6047718B2 (en) | Manufacturing method of thin film light emitting device | |
| JPS62219492A (en) | El device | |
| JPH08136940A (en) | Electrode film for liquid crystal display element | |
| JPS6396895A (en) | Thin film el device | |
| JPH01263188A (en) | Calcium tungstate luminescent thin layer and its production | |
| JPS6244984A (en) | Thin film electroluminescence element and manufacture thereof | |
| JPS62170191A (en) | Manufacture of thin film light emitting device | |
| JPS6315719B2 (en) | ||
| JPS6329396B2 (en) | ||
| JPS6021030A (en) | Solid electrochromic display element | |
| JPS61179487A (en) | Liquid crystal display panel | |
| JPS60100398A (en) | Thin film light emitting element | |
| JPH0227491Y2 (en) | ||
| JPH02126592A (en) | Membranous el element |