JPS63237465A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63237465A JPS63237465A JP62071230A JP7123087A JPS63237465A JP S63237465 A JPS63237465 A JP S63237465A JP 62071230 A JP62071230 A JP 62071230A JP 7123087 A JP7123087 A JP 7123087A JP S63237465 A JPS63237465 A JP S63237465A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- receiving part
- tinxoy
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010936 titanium Substances 0.000 claims abstract description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000000059 patterning Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 238000005121 nitriding Methods 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 229910018125 Al-Si Inorganic materials 0.000 abstract 2
- 229910018520 Al—Si Inorganic materials 0.000 abstract 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- 238000009751 slip forming Methods 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 241000276457 Gadidae Species 0.000 description 1
- 229910010421 TiNx Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、受光部と非受光部とを有する半導体装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor device having a light-receiving section and a non-light-receiving section.
本発明は、上記の様な半導体装置において、窒素とチタ
ンとを主成分とする遮光膜で非受光部を覆うことによっ
て、高い製造歩留とＳＮ比の高い受光信号とを得ること
ができる様にしたものである。The present invention makes it possible to obtain a high manufacturing yield and a light reception signal with a high signal-to-noise ratio by covering the non-light-receiving part with a light-shielding film containing nitrogen and titanium as main components in the semiconductor device as described above. This is what I did.
ＣＯＤ等の様に受光部と非受光部とを有する半導体装置
では、ＳＮ比の高い受光信号を得るために、非受光部へ
光を入射させず且つ受光部へも非受光部で反射された光
を入射させない様に、非受光部に遮光膜が設けられてい
る。In semiconductor devices such as CODs, which have a light-receiving part and a non-light-receiving part, in order to obtain a light-receiving signal with a high signal-to-noise ratio, light is not incident on the non-light-receiving part and is also reflected from the non-light-receiving part to the light-receiving part. A light-shielding film is provided on the non-light-receiving portion to prevent light from entering.
この様な遮光膜の一例として、Ａｌ系膜上にａ−５ｉ膜
を形成した二層膜が従来から用いられている。As an example of such a light-shielding film, a two-layer film in which an a-5i film is formed on an Al-based film has been conventionally used.
純粋Ａ Ｉ ＩＩＱ、数原子％のＳｉを含むＡｌ−５ｉ
膜、或いはへｌ−３ｉ−Ｃｕ膜等のＡｌ系膜は、数１０
００Å以上の膜厚の場合、赤外から紫外までの広い波長
帯域で光の透過率が低い。Pure A I IIQ, Al-5i containing several atomic % of Si
film or Al-based film such as 1-3i-Cu film has several tens of
In the case of a film thickness of 00 Å or more, the light transmittance is low in a wide wavelength band from infrared to ultraviolet.
しかし旧糸膜のみでは光の反射率が高（、Ａｌ系膜のバ
ターニングのためのフォトリソグラフィ工程において、
フォトレジスト層にハレーションが発生する。このため
に、旧糸膜にパターン崩れが生じ、製造歩留が低くなる
。However, the light reflectance of the old thread film alone is high (in the photolithography process for patterning the Al-based film,
Halation occurs in the photoresist layer. For this reason, pattern collapse occurs in the old yarn membrane, resulting in a low manufacturing yield.
しかも、Ａｌ系膜で反射された光が非受光部へ人射し、
ＳＮ比の高い受光信号を得ることができない。そこで、
上述の様な二層膜を遮光膜として用いて、光の反射率を
も低くしている。Moreover, the light reflected by the Al-based film enters the non-light receiving area,
It is not possible to obtain a received light signal with a high SN ratio. Therefore,
The two-layer film as described above is used as a light-shielding film to lower the reflectance of light.
ところが上述の様な二層膜の場合、４００〜４５０℃程
度の比較的低温のフォーミングアニールでも、ａ−５ｉ
とＡＩとが反応して、二層膜の光の反射率が高くなって
しまう。However, in the case of the above-mentioned two-layer film, even with forming annealing at a relatively low temperature of about 400 to 450°C,
and AI react, and the light reflectance of the two-layer film increases.
第２図中の破線は、フォーミングアニール後における厚
さ８０００人のＡＩ膜と厚さ９４０人のａｓ ｔ ＩＩ
Ｉとの二層膜の、可視光に対する反射率を示している。The broken line in Fig. 2 indicates the thickness of the 8,000-layer AI film after forming annealing and the 940-layer ast II film after forming annealing.
It shows the reflectance of the two-layer film with I to visible light.
このデータからも明らかな様に、反射率が十分には低く
ない。As is clear from this data, the reflectance is not low enough.
従って、この様な二層膜を用いた半導体装置では、高い
製造歩留とＳＮ比の高い受光信号とを必ずしも得ること
ができない。Therefore, in a semiconductor device using such a two-layer film, it is not necessarily possible to obtain a high manufacturing yield and a received light signal with a high signal-to-noise ratio.
なお、ａ −５ｉとＡＩとの反応を抑制するための膜を
Ａ１膜とａ−５ｉ膜との間に挾むことも考えられる。Note that it is also conceivable to sandwich a film between the A1 film and the a-5i film to suppress the reaction between a-5i and AI.
しかしその場合は、工程数が多くなって、製造コストが
増大する。However, in that case, the number of steps increases and the manufacturing cost increases.
本発明による半導体装置は、受光部と非受光部とを存し
、窒素とチタンとを主成分とする遮光膜１２が前記非受
光部を覆っている。The semiconductor device according to the present invention includes a light-receiving portion and a non-light-receiving portion, and a light-shielding film 12 containing nitrogen and titanium as main components covers the non-light-receiving portion.
本発明による半導体装置では、窒素とチタンとを主成分
とする遮光膜１２が用いられており、この遮光膜１２は
光の反射率が低い。従って、フォトリソグラフィで遮光
１１Ｊ１２をパターニングする様にしても、ハレーショ
ンの発生によるパターン崩れが抑制される。The semiconductor device according to the present invention uses a light shielding film 12 whose main components are nitrogen and titanium, and this light shielding film 12 has a low light reflectance. Therefore, even if the light shielding 11J12 is patterned by photolithography, pattern collapse due to the occurrence of halation is suppressed.
また、反射率の低い遮光膜１２が非受光部を覆っている
ので、この非受光部で反射されて受光部へノイズとして
入射する光の量が少ない。Furthermore, since the light-shielding film 12 with low reflectance covers the non-light-receiving portion, the amount of light reflected by the non-light-receiving portion and entering the light-receiving portion as noise is small.
以下、ＣＯＤに適用した本発明の一実施例を第１図及び
第２図を参照しながら説明する。Hereinafter, an embodiment of the present invention applied to COD will be described with reference to FIGS. 1 and 2.
本実施例のＣＣＤでは、第１図に示す様に、厚さ １．
０μｍの八１ Ｓｉ膜１１と厚さ８０ｎｍのＴｉＮｘ
０ｙ膜１２との二層膜１３が、半導体基板１４．のうち
の非受光部を覆う様にパターニングされている。As shown in FIG. 1, the CCD of this embodiment has a thickness of 1.
0 μm 81 Si film 11 and 80 nm thick TiNx
The double layer film 13 with the Oy film 12 is formed on the semiconductor substrate 14. It is patterned to cover the non-light receiving part.
ＴｉＮ、Ｏ，膜１２は、ＡｒにＮ２及び０□を加えた雰
囲気中、計にＮ２を加えた雰囲気中またはＮ２に０２を
加えた雰囲気中におけるＴｉのスパッタリングによって
形成されている。このときの＾ｒの圧力は２〜１０ ｍ
Ｔｏｒｒ程度、Ｎ２の圧力は０．５〜１０ｍＴｏｒｒ程
度、Ｏ２の分圧は１ｘ ｔ ｏ−６〜ｉｘ ｔ ｏ−’
Ｔｏｒｒ程度である。ＴｉＮＸ０ｙ膜１２の厚さは、ｌ
Ｏ〜３００ｎｍ程度であってもよい。The TiN, O, film 12 is formed by sputtering Ti in an atmosphere of Ar plus N2 and 0□, an atmosphere plus N2, or an atmosphere of N2 plus 02. At this time, the pressure of ^r is 2 to 10 m
Torr, N2 pressure is about 0.5 to 10 mTorr, O2 partial pressure is 1x t o-6 to ix t o-'
It is about Torr. The thickness of the TiNX0y film 12 is l
It may be about 0 to 300 nm.
またＴｉＮ、Ｏ，膜１２は、上述の様なスパッタリング
による直接形成の他に、Ｔｉの窒化及び酸化によっても
形成することができる。更にまたＴｉＮ。In addition to direct formation by sputtering as described above, the TiN, O film 12 can also be formed by nitriding and oxidizing Ti. Furthermore, TiN.
Ｏｙ膜１２は、Ａｌ−３ｉ膜１１の形成に引き続いて連
続的に形成することもできる。The Oy film 12 can also be formed continuously following the formation of the Al-3i film 11.
第２図中の実線は、二層膜１３の可視光に対する反射率
を示している。ＴｉＮ、Ｏ，膜１２はフォーミングアニ
ールによってもＡｌ−５ｉ膜１１と反応せず、このデー
タからも明らかな様に、二層膜１３の反射率は破線で示
されている従来の二層膜の反射率よりも低い。The solid line in FIG. 2 indicates the reflectance of the two-layer film 13 to visible light. The TiN, O, film 12 does not react with the Al-5i film 11 even after forming annealing, and as is clear from this data, the reflectance of the two-layer film 13 is higher than that of the conventional two-layer film shown by the broken line. lower than reflectance.
なお二層膜１３の反射率は、ＴｉＮＸ０ｙ膜１２のＸの
値を適当に選択することによって、１０〜５０％程度の
範囲で制御可能である。Note that the reflectance of the two-layer film 13 can be controlled within a range of about 10 to 50% by appropriately selecting the value of X of the TiNX0y film 12.
二層１１！１３のバターニングは、通常のフォトリソグ
ラフィ及びエツチングによって行われている。The patterning of the two layers 11!13 is performed by conventional photolithography and etching.
このエツチングに際してドライエツチングを用いれば、
異方性エツチングを行うことができる。If dry etching is used for this etching,
Anisotropic etching can be performed.
この様な本実施例のＣＯＤでは、フォトリソグラフィで
二層膜１３をバターニングする際に、フォトレジスト層
にハレーションが発生することによる二層膜１３のパタ
ーン崩れが少ない。In the COD of this embodiment, when the two-layer film 13 is patterned by photolithography, there is little pattern collapse of the two-layer film 13 due to halation occurring in the photoresist layer.
また、ＣＣＤの非受光部へ光が入射するのを防止するた
めに光の透過率が低い＾１−Ｓｉ膜１１を用いているに
も拘らず、このＡｌ−３ｉ膜ｌｌ上に光の反射率の低い
ＴｉＮ、Ｏ，膜１２が形成されているので、非受光部で
反射されて受光部へノイズとして入射する光の量も少な
い。In addition, although the ^1-Si film 11 with low light transmittance is used to prevent light from entering the non-light-receiving area of the CCD, there is no reflection of light on this Al-3i film ll. Since the TiN, O, film 12 with a low ratio is formed, the amount of light that is reflected from the non-light receiving area and enters the light receiving area as noise is also small.
本発明による半導体装置では、フォトリソグラフィで遮
光膜をパターニングする様にしてもハレーションの発生
によるパターン崩れが抑制されるので、高い製造歩留を
得ることができる。In the semiconductor device according to the present invention, even if the light shielding film is patterned by photolithography, pattern collapse due to the occurrence of halation is suppressed, so that a high manufacturing yield can be obtained.
また、非受光部で反射されて受光部へノイズとして入射
する光の量が少ないので、ＳＮ比の高い受光信号を得る
ことができる。Furthermore, since the amount of light that is reflected by the non-light receiving section and enters the light receiving section as noise is small, a light receiving signal with a high S/N ratio can be obtained.
第１図は本発明の一実施例の側断面図、第２図は本発明
の一従来例及び第１図に示した一実施例で用いられてい
る遮光膜の反射率を示すグラフである。
なお図面に用いた符号において、
１１−−−−−−−−−−−ＡＩ −Ｓｉ膜１２−・・
−・−・・−・・・・・Ｔｉ Ｎ ｘ Ｏｙ膜である。FIG. 1 is a side sectional view of an embodiment of the present invention, and FIG. 2 is a graph showing the reflectance of a light-shielding film used in a conventional example of the present invention and the embodiment shown in FIG. . In addition, in the symbols used in the drawings, 11----------AI-Si film 12-...
-・-・・・・・TiNxOy film.
Claims (1)
とする遮光膜が前記非受光部を覆っている半導体装置。A semiconductor device having a light-receiving part and a non-light-receiving part, and a light-shielding film containing nitrogen and titanium as main components covering the non-light-receiving part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62071230A JP2625712B2 (en) | 1987-03-25 | 1987-03-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62071230A JP2625712B2 (en) | 1987-03-25 | 1987-03-25 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63237465A true JPS63237465A (en) | 1988-10-03 |
| JP2625712B2 JP2625712B2 (en) | 1997-07-02 |
Family
ID=13454681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62071230A Expired - Lifetime JP2625712B2 (en) | 1987-03-25 | 1987-03-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2625712B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03174771A (en) * | 1989-09-26 | 1991-07-29 | Nec Corp | Solid-state image pickup device |
| US5731246A (en) * | 1992-10-21 | 1998-03-24 | International Business Machines Corporation | Protection of aluminum metallization against chemical attack during photoresist development |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842368A (en) * | 1981-09-07 | 1983-03-11 | Fuji Photo Optical Co Ltd | Solid-state image pickup element |
-
1987
- 1987-03-25 JP JP62071230A patent/JP2625712B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842368A (en) * | 1981-09-07 | 1983-03-11 | Fuji Photo Optical Co Ltd | Solid-state image pickup element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03174771A (en) * | 1989-09-26 | 1991-07-29 | Nec Corp | Solid-state image pickup device |
| US5731246A (en) * | 1992-10-21 | 1998-03-24 | International Business Machines Corporation | Protection of aluminum metallization against chemical attack during photoresist development |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2625712B2 (en) | 1997-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |