JPS63211775A - Compound semiconductor solar cell - Google Patents
Compound semiconductor solar cellInfo
- Publication number
- JPS63211775A JPS63211775A JP62045638A JP4563887A JPS63211775A JP S63211775 A JPS63211775 A JP S63211775A JP 62045638 A JP62045638 A JP 62045638A JP 4563887 A JP4563887 A JP 4563887A JP S63211775 A JPS63211775 A JP S63211775A
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- layer
- semiconductor layer
- conductivity type
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 150000001875 compounds Chemical class 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 230000012010 growth Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 43
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、ｐ電極およびｎ電極の両電極を太陽光受光
面と反対側から同一方向に取り出せるようにした高性能
な化合物半導体太陽電池に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] This invention relates to a high-performance compound semiconductor solar cell in which both the p-electrode and the n-electrode can be taken out in the same direction from the side opposite to the sunlight-receiving surface. It is something.
第２図は従来のＧａＡｓ太陽電池のセル構造を示す図で
ある。この図において、１はｎ形ＧａＡｓ結晶基板、２
はこのｎ形ＧａＡｓ結晶基板１の表面にエピタキシャル
成長したｎ形ＧａＡｓ層、３はｐ形ＧａＡｓ層、４は前
記ｐ形ＧａＡｓ層３で発生した電子が表面再結合により
消滅するのを防ぐためのｐ形ＡｊＧａＡｓ層、５は前記
ｐ形ＧａＡｓ層３表面より太陽光の反射を防ぐための反
射防止膜、６はグリッド電極（ｐｍ極）、７は前記ｎ形
ＧａＡｓ結晶基板１の裏面全面に形成されたｎ電極、８
はバス電極で、アセンブリ時にワイヤをはんだ付けした
り、溶接したりするための電極である。FIG. 2 is a diagram showing the cell structure of a conventional GaAs solar cell. In this figure, 1 is an n-type GaAs crystal substrate, 2 is
is an n-type GaAs layer epitaxially grown on the surface of this n-type GaAs crystal substrate 1, 3 is a p-type GaAs layer, and 4 is a p-type GaAs layer for preventing electrons generated in the p-type GaAs layer 3 from disappearing due to surface recombination. 5 is an anti-reflection film for preventing reflection of sunlight from the surface of the p-type GaAs layer 3, 6 is a grid electrode (pm pole), and 7 is formed on the entire back surface of the n-type GaAs crystal substrate 1. n-electrode, 8
is a bus electrode, which is used for soldering or welding wires during assembly.
次に動作について説明する。Next, the operation will be explained.
表面より入射した太陽光によって、ｐ形ＧａＡｓ層３．
ｎ形ＧａＡｓ層２およびｎ形ＧａＡｓ結晶基板１の各半
導体層中に電子と正孔が発生し、電子はｎ形ＧａＡｓ層
２の方へ、正孔はｐ形ＧａＡｓ層３の万へ、それぞれ逆
方向に拡散し、太陽光による光起電力が発生する。ここ
で、ｐ形ＡｊＧａＡｓ層４の役割は、ＧａＡｓよりバン
ドギャップの大きい半導体をペテロ接合することにより
表面への電子の拡散を防止して、ｐ形ＧａＡｓ層３で発
生した電子が表面再結合により消滅してしまうことを防
ぐためのものである。The p-type GaAs layer 3.
Electrons and holes are generated in each semiconductor layer of the n-type GaAs layer 2 and the n-type GaAs crystal substrate 1, and the electrons are directed toward the n-type GaAs layer 2, and the holes are directed toward the p-type GaAs layer 3, respectively. It diffuses in the opposite direction and generates photovoltaic force due to sunlight. Here, the role of the p-type AjGaAs layer 4 is to prevent the diffusion of electrons to the surface by forming a petrojunction with a semiconductor whose band gap is larger than that of GaAs, and to prevent the electrons generated in the p-type GaAs layer 3 from recombining on the surface. This is to prevent it from disappearing.
また、反射防止膜５の役割は、太陽光が半導体表面より
反射されることを防いで、有効に太陽光を半導体層中に
入射させることを助けるためのものである。太陽光電流
はグリッド電極６およびｎ電極７より取り出す。この時
、グリッド電極６の真下の半導体層では太陽光が遮蔽さ
れるので無効部分となる。したがって、抵抗が増加しな
いように、かつグリッド電極６の面積をできるだけ少な
くして、有効に太陽光電流を捕集するためのグリッドパ
ターンの設計が種々なされている。Further, the role of the antireflection film 5 is to prevent sunlight from being reflected from the semiconductor surface and to help sunlight to effectively enter the semiconductor layer. Solar current is extracted from the grid electrode 6 and the n-electrode 7. At this time, the semiconductor layer directly under the grid electrode 6 blocks sunlight and becomes an ineffective portion. Therefore, various designs of grid patterns have been made in order to effectively collect solar current by minimizing the area of the grid electrode 6 without increasing the resistance.
し発明が解決しようとする問題点〕
従来のＧａＡｓ太陽電池は以上のように両面から電極を
取り出せるように構成されているため、これを実際のシ
ステム、例えば人工衛星の太陽電池パドルに実装する際
には多数のＧａＡｓ太陽電池セルを配置し、セル間をワ
イヤで接続するので配線が複雑であり、実装する時の作
業が煩雑であったり、レイダウンの自動化が容易でなく
、アセンブリコストが大となったり、また、パドルの展
開時のワイヤ断線などの事故に対しても特別の配慮を払
う必要があるなど多゛くの問題点があった。[Problems to be Solved by the Invention] Conventional GaAs solar cells are configured so that electrodes can be taken out from both sides as described above, so when implementing this into an actual system, such as a solar cell paddle of an artificial satellite, Since a large number of GaAs solar cells are arranged and the cells are connected with wires, the wiring is complicated, the mounting work is complicated, the laydown is not easy to automate, and the assembly cost is high. There were many problems, such as the need to pay special attention to accidents such as wire breakage when the paddles were deployed.
この発明は、上記のような問題点を解消するためになさ
れたもので、太陽電池セルをパドルに実装する際、ワイ
ヤ接続の代わりにインクコネクタのプリント化を行うこ
とができる化合物半導体太陽電池を得ることを目的とす
る。This invention was made to solve the above-mentioned problems, and it is a compound semiconductor solar cell that can print ink connectors instead of wire connections when mounting solar cells on paddles. The purpose is to obtain.
この発明に係る化合物半導体太陽電池は、波長が０．４
〜０．９−の範囲の光に対して透明な単結晶基板の表面
上に順次エピタキシャル成長により形成した第１導電形
゛の第１の化合物半導体層。The compound semiconductor solar cell according to the present invention has a wavelength of 0.4
A first compound semiconductor layer of a first conductivity type formed by sequential epitaxial growth on the surface of a single crystal substrate transparent to light in the range of ~0.9-.
第１導電形の第２の化合物半導体層、第２導電形の化合
物半導体層を備え、この第２導電形の化合物半導体層上
の一部に形成された電極と、第２導電形の化合物半導体
層表面より第１導電形の第２の化合物半導体層に届く深
さまで選択的にエツチングして形成した所要数の溝と、
これらの溝内に形成された電極およびこれらの電極を接
続するバス電極を備え、単結晶基板の裏面に反射防止膜
を形成したものである。a second conductivity type compound semiconductor layer; a second conductivity type compound semiconductor layer; an electrode formed on a portion of the second conductivity type compound semiconductor layer; and a second conductivity type compound semiconductor layer. a required number of grooves formed by selectively etching from the layer surface to a depth reaching the second compound semiconductor layer of the first conductivity type;
It includes electrodes formed in these grooves and bus electrodes connecting these electrodes, and an antireflection film is formed on the back surface of a single crystal substrate.
この発明においては、太陽光受光面と反対側の同一面上
にｐ電極とｎ電極を配置したことから、ワイヤを使わず
プリント基板に実装してアセンブリが可能である。In this invention, since the p-electrode and the n-electrode are arranged on the same surface opposite to the sunlight-receiving surface, it is possible to assemble the device by mounting it on a printed circuit board without using wires.
この発明の一実施例を第１図について説明する。 An embodiment of the invention will be described with reference to FIG.
第１図はこの発明の一実施例を示す化合物半導体太陽電
池の構造を示す図である。FIG. 1 is a diagram showing the structure of a compound semiconductor solar cell showing one embodiment of the present invention.
第１図において、１１は波長が０．４〜０．９−の領域
の光に対して透明な単結晶基板（以下透明基板という）
であり、例えばサファイヤ基板。In Fig. 1, 11 is a single crystal substrate that is transparent to light in the wavelength range of 0.4 to 0.9- (hereinafter referred to as a transparent substrate).
For example, a sapphire substrate.
あるいはＺ ｎｓ 、 Ｚ ｎｓ ｅなどの■−■族化
合物半導体基板である。４はこの透明基板１１の表面に
エピタキシャル成長された第１導電形の第１の化合物半
導体層である、例えばｐ形ＡＪＩＧａＡｓ層、３はこの
ｐ形Ａｊ’ＧａＡｓ層４上に形成された第１導電形の第
２の化合物半導体層である、例えばｐ形ＧａＡｓ層、２
は前記ｐ形ＧａＡｓ層３上に形成された第２導電形の化
合物半導体層である、例えばｎ形Ｇ ＆Ａ ｓ＠、５は
前記透明基板１１の裏面（太陽光入射側）に形成された
反射防止膜、８はバス電極、１２は前記ｎ形ＧａＡｓ層
２の表面よりｐ形ＧａＡｓ層３に届く深さまで選択エツ
チングして形成した溝、１３は前記ｎ形ＧａＡｓ層２上
に形成されたグリッド状のｎ電極、１４は前記溝１２内
に形成したグリッド状のｐ電極、１５は前記ｎ形ＧａＡ
ｓ層２とｐ電極１４とを絶縁ずろための絶縁膜である。Alternatively, it is a ■-■ group compound semiconductor substrate such as Zns and Znse. 4 is a first compound semiconductor layer of a first conductivity type epitaxially grown on the surface of this transparent substrate 11, for example, a p-type AJIGaAs layer; 3 is a first conductivity type formed on this p-type AJ'GaAs layer 4; A second compound semiconductor layer of the type, for example a p-type GaAs layer, 2
5 is a compound semiconductor layer of the second conductivity type formed on the p-type GaAs layer 3, for example, an n-type G&A s@, and 5 is a reflective layer formed on the back surface (sunlight incident side) of the transparent substrate 11. 8 is a bus electrode, 12 is a groove formed by selective etching from the surface of the n-type GaAs layer 2 to a depth reaching the p-type GaAs layer 3, and 13 is a grid formed on the n-type GaAs layer 2. 14 is a grid-shaped p electrode formed in the groove 12, 15 is the n-type GaA
This is an insulating film for insulating the s-layer 2 and the p-electrode 14.
この発明の化合物半導体太陽電池の動作は、透明基板１
１の裏面より入射した太陽光によって、ｐ形Ｇ ａＡ
ｓ層３．ｎ形ＧａＡｓ層２の各半導体層中に電子と正孔
が発生し、電子はｎ形ＧａＡｓ層２の方へ、正孔はｐ形
ＧａＡｓ層３の方へ、それぞれ逆方向に拡散し、正負両
電荷が分離されて光起電力が発生する。ここで、ｐ形Ａ
ｌ！ＧａＡｓ層４および反射防止膜５の役割は従来例と
同じである。電流の取出しは、グリッド状のｎ電極１３
およびグリッド状のｐ電極１４で行う。The operation of the compound semiconductor solar cell of this invention is as follows:
Due to sunlight incident from the back surface of 1, p-type GaA
s layer 3. Electrons and holes are generated in each semiconductor layer of the n-type GaAs layer 2, and the electrons diffuse in opposite directions toward the n-type GaAs layer 2 and the holes toward the p-type GaAs layer 3. Both charges are separated and a photovoltaic force is generated. Here, p-type A
l! The roles of the GaAs layer 4 and the antireflection film 5 are the same as in the conventional example. The current is taken out using a grid-shaped n-electrode 13.
and a grid-like p-electrode 14.
ここで、透明基板１１としては、ＧａＡｓの活性領域で
ある波長０．４〜０．９囮の光に対して透明であること
の他に、高品質で大面積のウェハが安価に入手できろ乙
と、結晶系がＧａＡｓの閃亜鉛鉱型に近く容易にエピタ
キシャル成長が可能であることなどが必要である。これ
らの条件を満たす単結晶基板として、サファイヤ基板お
よびＺｎＳ。Here, as for the transparent substrate 11, in addition to being transparent to light having a wavelength of 0.4 to 0.9, which is the active region of GaAs, a high-quality, large-area wafer can be obtained at low cost. Second, it is necessary that the crystal system be close to the zinc blende type of GaAs and that epitaxial growth can be easily performed. Sapphire substrates and ZnS are single-crystal substrates that meet these conditions.
Ｚｎ５ｅなどの■−■族化合物半導体基板がある。There is a ■-■ group compound semiconductor substrate such as Zn5e.
Ｚｎ５ｅの場合、格子定数がＧａＡｓに近いためエピタ
キシャル成長が容易で最も望ましいが、バンドギャップ
エネルギーは２．８３ｅＶ（λ＝０．４４μｍ）である
ため太陽電池の効果はわずか低めとなる。サファイヤ基
板やＺｎＳ の場合、完全に透明が望ましいが、Ｇａ
ＡＳとの格子定数の差はそれぞれ１２％、４％と大きい
。しかし、最近格子定数が大きく異なる基板上に良質の
エピタキシャル膜を得る技術が進んできているため、こ
れらの成長は可能である。In the case of Zn5e, the lattice constant is close to that of GaAs, making it easy to epitaxially grow, making it the most desirable material. However, since the band gap energy is 2.83 eV (λ=0.44 μm), the effectiveness of the solar cell is slightly lower. In the case of a sapphire substrate or ZnS, completely transparent is desirable, but Ga
The difference in lattice constant from AS is as large as 12% and 4%, respectively. However, these growths are now possible because technology for producing high-quality epitaxial films on substrates with significantly different lattice constants has recently progressed.
なお、上記実施例では透明基板１１の上に順次ｐ形Ａｊ
ＧａＡｓ層’ＬＰＰ形ＧａＡｓ層３およびｎ形ＧａＡｓ
層２を成長した結晶上に太陽電池を形成したものについ
て示したが、導電形を変えて透明基板１１の上に順次ｎ
形ＡＪＧａＡｓ層、ｎ形ＧａＡｓ層およびｐ形ＧａＡｓ
、ｌｉｉを成長した結晶上に太陽電池を形成しても良く
、上記実施例と同様の効果を奏する。In the above embodiment, p-type Aj is sequentially formed on the transparent substrate 11.
GaAs layer 'LPP type GaAs layer 3 and n type GaAs
Although the solar cell is shown as having been formed on the crystal grown layer 2, the conductivity type is changed and the layer 2 is sequentially formed on the transparent substrate
type AJGaAs layer, n-type GaAs layer and p-type GaAs
.
また、上記実施例では、化合物半導体としてＧａＡｓを
用いたものを示したが、ＧａＡｓの代わりに他の化合物
半導体であるＩｎＰ やＣｄＴｅを用いてもよい。Further, in the above embodiment, GaAs was used as the compound semiconductor, but other compound semiconductors such as InP or CdTe may be used instead of GaAs.
この発明は以上説明したとおり、波長が０．４〜０．９
μｍの範囲の光に対して透明な単結晶基板の表面上に順
次エピ“タキシャル成長により形成した第１導電形の第
１の化合物半導体層、第１導電形の第２の化合物半導体
層、第２導電形の化合物半導体層を備え、この第２導電
形の化合物半導体層上の一部に形成された電極と、第２
導電形の化合物半導体層表面より第１導電形の第２の化
合物半導体層に届（深さまで選択的にエツチングして形
成した所要数の溝と、これらの溝内に形成された電極お
よびこれらの電極を接続するパス電極を備え、単結晶基
板の裏面に反射防止膜を形成したので、化合物半導体太
陽電池の出力の取出し用のｎｐ Ｐ両電極を同一方向か
ら取り出すことができろ。したがって、この化合物半導
体太陽電池を実装する際、ワイヤ接続の代わりにインタ
コネクタのプリント化を行うことができ、煩雑なレイダ
ウンの作業を軽減し、また、自動化を行うことでアセン
ブリコストが著しく軽減できる。また、太陽光を電極金
属と反対側より入射させるので、変換効率の高い高性能
な化合物半導体太陽電池が得られる効果がある。As explained above, this invention has a wavelength of 0.4 to 0.9.
A first compound semiconductor layer of a first conductivity type, a second compound semiconductor layer of a first conductivity type, and a second compound semiconductor layer of a first conductivity type are formed sequentially by epitaxial growth on the surface of a single crystal substrate transparent to light in the μm range. A second conductivity type compound semiconductor layer is provided, and an electrode formed on a part of the second conductivity type compound semiconductor layer, and a second conductivity type compound semiconductor layer are provided.
From the surface of the compound semiconductor layer of conductivity type to the second compound semiconductor layer of first conductivity type, a required number of grooves formed by selective etching to a depth, electrodes formed in these grooves, and Since a pass electrode is provided to connect the electrodes and an antireflection film is formed on the back surface of the single crystal substrate, both the np and p electrodes for extracting the output of the compound semiconductor solar cell can be taken out from the same direction. When mounting compound semiconductor solar cells, interconnectors can be printed instead of wire connections, reducing the complicated laydown work, and automation can significantly reduce assembly costs. Since sunlight is incident from the side opposite to the electrode metal, a high-performance compound semiconductor solar cell with high conversion efficiency can be obtained.
第１図は乙の発明の一実施例を示す化合物半導体太陽電
池の構造を示す図、第２図は従来のＧａＡｓ太陽電池の
セル構造を示す図である。
図において、２はｎ形ＧａＡｓ層、３はｐ形ＧａＡｓ層
、４はｐ形ＡｌＧａＡｓ層、５は反射防止膜、８はバス
電極、１１は透明基板、１２は溝、１３はｎ電極、１４
はｐ電極、１５は絶縁膜である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 （外２名）ヘのぐ−の
Ｕ］＼丁Ｃつ（Ｎ で−し）
手続補正書（自発）
１、事件の表示 特願昭６２−４５６３８号２、発
明の名称 化合物半導体太陽電池３、補正をする者
事件との関係 特許出願人
住 所 東京都千代田区丸の内二丁目２番３号。
名 称 （６０１）三菱電機株式会社代表者志岐守哉
４、代理人
住 所 東京都千代田区丸の内二丁目２番３号へ
・、〉
５、補正の対象
明細書の特許請求の範囲の欄および発明の詳細な説明の
欄
３、補正の内容
（１） 明細書の特許請求の範囲を別紙のように補正
する。
（２） 明細書第８頁４行の「が望ましいが、」を、
［であるため望ましいが、］と補正する。
以 上
２、特許請求の範囲
（１）波長が０．４〜０．９μｍの範囲の光に対して透
明な単結晶基板の表面上に順次エピタキシャル成長によ
り形成した第１導電形の第１の化合物半導体層、第１導
電形の第２の化合物半導体層。
第２導電形の化合物半導体層を備え、この第２導電形の
化合物半導体層上の一部に形成された電極と、前記第２
導電形の化合物半導体層表面より前記第１導電形の第２
の化合物半導体層に届く深さまで選択的にエツチングし
て形成した所要数の溝と、これらの溝内に形成された電
極およびこれらの電極を接続するバス電極を備え、前記
単結晶基板の裏面に反射防止膜を形成したことを特徴と
する化合物半導体太陽電池。
（２）透明な単結晶基板は、ＩＩ−ＶＩ族化合物半導体
であることを特徴とする特許請求の範囲第（１）項記載
の化ば物半導体太陽電池。FIG. 1 is a diagram showing the structure of a compound semiconductor solar cell according to an embodiment of the invention of B, and FIG. 2 is a diagram showing the cell structure of a conventional GaAs solar cell. In the figure, 2 is an n-type GaAs layer, 3 is a p-type GaAs layer, 4 is a p-type AlGaAs layer, 5 is an antireflection film, 8 is a bus electrode, 11 is a transparent substrate, 12 is a groove, 13 is an n-electrode, 14
is a p-electrode, and 15 is an insulating film. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Henogu no U]\Ding Ctsu (N de-shi) Procedural amendment (spontaneous) 1. Indication of the case Japanese Patent Application No. 62-45638 2. Invention Name Compound Semiconductor Solar Cell 3, Relationship to the Amended Person Case Patent Applicant Address 2-2-3 Marunouchi, Chiyoda-ku, Tokyo. Name (601) Mitsubishi Electric Corporation Representative Moriya Shiki 4, Agent Address 2-2-3 Marunouchi, Chiyoda-ku, Tokyo 5. Claims column of the specification to be amended and Detailed Description of the Invention Column 3, Contents of Amendment (1) The scope of claims in the specification is amended as shown in the attached sheet. (2) “However,” on page 8, line 4 of the specification,
[It is preferable because it is, but it is corrected as]. 2. Claims (1) A first compound of a first conductivity type formed by sequential epitaxial growth on the surface of a single crystal substrate that is transparent to light having a wavelength in the range of 0.4 to 0.9 μm. a semiconductor layer, a second compound semiconductor layer of a first conductivity type; a compound semiconductor layer of a second conductivity type; an electrode formed on a part of the compound semiconductor layer of the second conductivity type;
from the surface of the compound semiconductor layer of the conductivity type to the second conductivity type of the first conductivity type.
a required number of grooves formed by selective etching to a depth that reaches the compound semiconductor layer of the single crystal substrate, electrodes formed in these grooves, and bus electrodes connecting these electrodes; A compound semiconductor solar cell characterized by forming an antireflection film. (2) The chemical semiconductor solar cell according to claim (1), wherein the transparent single crystal substrate is a II-VI group compound semiconductor.
Claims (2)
明な単結晶基板の表面上に順次エピタキシャル成長によ
り形成した第１導電形の第１の化合物半導体層、第１導
電形の第２の化合物半導体層、第２導電形の化合物半導
体層を備え、この第２導電形の化合物半導体層上の一部
に形成された電極と、前記第２導電形の化合物半導体層
表面より前記第１導電形の第２の化合物半導体層に届く
深さまで選択的にエッチングして形成した所要数の溝と
、これらの溝内に形成された電極およびこれらの電極を
接続するバス電極を備え、前記単結晶基板の裏面に反射
防止膜を形成したことを特徴とする化合物半導体太陽電
池。(1) A first compound semiconductor layer of a first conductivity type formed by sequential epitaxial growth on the surface of a single crystal substrate transparent to light having a wavelength in the range of 0.4 to 0.9 μm; a second compound semiconductor layer, a compound semiconductor layer of a second conductivity type; an electrode formed on a part of the compound semiconductor layer of the second conductivity type; A required number of grooves formed by selective etching to a depth reaching the second compound semiconductor layer of the first conductivity type, electrodes formed in these grooves, and a bus electrode connecting these electrodes, A compound semiconductor solar cell characterized in that an antireflection film is formed on the back surface of the single crystal substrate.
ることを特徴とする特許請求の範囲第（１）項記載の化
合物半導体太陽電池。(2) The compound semiconductor solar cell according to claim (1), wherein the transparent single crystal substrate is a II-VI group compound semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045638A JPS63211775A (en) | 1987-02-27 | 1987-02-27 | Compound semiconductor solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045638A JPS63211775A (en) | 1987-02-27 | 1987-02-27 | Compound semiconductor solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63211775A true JPS63211775A (en) | 1988-09-02 |
Family
ID=12724905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62045638A Pending JPS63211775A (en) | 1987-02-27 | 1987-02-27 | Compound semiconductor solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63211775A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
| US20100132781A1 (en) * | 2007-06-28 | 2010-06-03 | Xgroup S.P.A. | Back-Contacted Photovoltaic Device |
| CN102257636A (en) * | 2008-10-23 | 2011-11-23 | 奥塔装置公司 | Photovoltaic device with back side contacts |
| CN102257628A (en) * | 2008-10-23 | 2011-11-23 | 奥塔装置公司 | Integration of a photovoltaic device |
| US20120204942A1 (en) | 2008-10-23 | 2012-08-16 | Alta Devices, Inc. | Optoelectronic devices including heterojunction and intermediate layer |
| CN105938855A (en) * | 2016-06-27 | 2016-09-14 | 山东浪潮华光光电子股份有限公司 | Sapphire substrate single-junction solar cell structure and preparation method thereof |
| US9502594B2 (en) | 2012-01-19 | 2016-11-22 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
| US9691921B2 (en) | 2009-10-14 | 2017-06-27 | Alta Devices, Inc. | Textured metallic back reflector |
| US9768329B1 (en) | 2009-10-23 | 2017-09-19 | Alta Devices, Inc. | Multi-junction optoelectronic device |
| US10326033B2 (en) | 2008-10-23 | 2019-06-18 | Alta Devices, Inc. | Photovoltaic device |
| US10615304B2 (en) | 2010-10-13 | 2020-04-07 | Alta Devices, Inc. | Optoelectronic device with dielectric layer and method of manufacture |
| US11038080B2 (en) | 2012-01-19 | 2021-06-15 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
| US11271128B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
| US11271133B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device with group IV semiconductor as a bottom junction |
-
1987
- 1987-02-27 JP JP62045638A patent/JPS63211775A/en active Pending
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
| US20100132781A1 (en) * | 2007-06-28 | 2010-06-03 | Xgroup S.P.A. | Back-Contacted Photovoltaic Device |
| US10326033B2 (en) | 2008-10-23 | 2019-06-18 | Alta Devices, Inc. | Photovoltaic device |
| US10797187B2 (en) * | 2008-10-23 | 2020-10-06 | Alta Devices, Inc. | Photovoltaic device with back side contacts |
| US20120204942A1 (en) | 2008-10-23 | 2012-08-16 | Alta Devices, Inc. | Optoelectronic devices including heterojunction and intermediate layer |
| US9029680B2 (en) * | 2008-10-23 | 2015-05-12 | Alta Devices, Inc. | Integration of a photovoltaic device |
| US9029687B2 (en) * | 2008-10-23 | 2015-05-12 | Alta Devices, Inc. | Photovoltaic device with back side contacts |
| US20150243815A1 (en) * | 2008-10-23 | 2015-08-27 | Alta Devices, Inc. | Photovoltaic device with back side contacts |
| US9136418B2 (en) | 2008-10-23 | 2015-09-15 | Alta Devices, Inc. | Optoelectronic devices including heterojunction and intermediate layer |
| US9178099B2 (en) | 2008-10-23 | 2015-11-03 | Alta Devices, Inc. | Methods for forming optoelectronic devices including heterojunction |
| CN102257628A (en) * | 2008-10-23 | 2011-11-23 | 奥塔装置公司 | Integration of a photovoltaic device |
| US10505058B2 (en) | 2008-10-23 | 2019-12-10 | Alta Devices, Inc. | Photovoltaic device |
| CN102257636A (en) * | 2008-10-23 | 2011-11-23 | 奥塔装置公司 | Photovoltaic device with back side contacts |
| US9691921B2 (en) | 2009-10-14 | 2017-06-27 | Alta Devices, Inc. | Textured metallic back reflector |
| US9768329B1 (en) | 2009-10-23 | 2017-09-19 | Alta Devices, Inc. | Multi-junction optoelectronic device |
| US11271128B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
| US11271133B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device with group IV semiconductor as a bottom junction |
| US10615304B2 (en) | 2010-10-13 | 2020-04-07 | Alta Devices, Inc. | Optoelectronic device with dielectric layer and method of manufacture |
| US10008628B2 (en) | 2012-01-19 | 2018-06-26 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
| US9502594B2 (en) | 2012-01-19 | 2016-11-22 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
| US11038080B2 (en) | 2012-01-19 | 2021-06-15 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
| US11942566B2 (en) | 2012-01-19 | 2024-03-26 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
| CN105938855A (en) * | 2016-06-27 | 2016-09-14 | 山东浪潮华光光电子股份有限公司 | Sapphire substrate single-junction solar cell structure and preparation method thereof |
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