JPS63184210A - Manufacture of transparent conductor - Google Patents
Manufacture of transparent conductorInfo
- Publication number
- JPS63184210A JPS63184210A JP62016387A JP1638787A JPS63184210A JP S63184210 A JPS63184210 A JP S63184210A JP 62016387 A JP62016387 A JP 62016387A JP 1638787 A JP1638787 A JP 1638787A JP S63184210 A JPS63184210 A JP S63184210A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- transparent
- transparent conductor
- film
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010408 film Substances 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 150000003606 tin compounds Chemical class 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- NPNPZTNLOVBDOC-UHFFFAOYSA-N 1,1-difluoroethane Chemical compound CC(F)F NPNPZTNLOVBDOC-UHFFFAOYSA-N 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VOPWNXZWBYDODV-UHFFFAOYSA-N Chlorodifluoromethane Chemical compound FC(F)Cl VOPWNXZWBYDODV-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- SWUWMVIPFQAITJ-UHFFFAOYSA-N chlorine difluoride-35cl Chemical compound FClF SWUWMVIPFQAITJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/211—SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Non-Insulated Conductors (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は低抵抗且つ高透明性の透明導電体の製造方法、
特に酸化錫を主成分とする透明導電膜が付着した透明基
体からなる透明導電体の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for manufacturing a transparent conductor with low resistance and high transparency;
In particular, the present invention relates to a method for manufacturing a transparent conductor comprising a transparent substrate to which a transparent conductive film containing tin oxide as a main component is attached.
近年、透明導電体は太陽電池あるいは、液晶表示素子、
エレクトロルミネッセンス素子、プラズマディスプレー
パネルなどの透明電極、あるいは面発熱体などに広く利
用されている。In recent years, transparent conductors have been used in solar cells, liquid crystal display elements,
It is widely used in electroluminescent devices, transparent electrodes in plasma display panels, etc., and surface heating elements.
これらの透明導電体の透明導電膜としてはフッ素やアン
チモンをドープした酸化銅膜や錫をドープした酸化イン
ジウム（ＩＴＯ）膜等がよく知られている。As transparent conductive films of these transparent conductors, copper oxide films doped with fluorine or antimony, indium oxide (ITO) films doped with tin, and the like are well known.
これらの透明導電膜は熱分解酸化反応法、スパッタリン
グ法、又は真空蒸着法により透明基板上に形成される。These transparent conductive films are formed on a transparent substrate by a thermal decomposition oxidation reaction method, a sputtering method, or a vacuum evaporation method.
熱分解酸化反応法で形成された透明導電膜、特に熱分解
酸化度比法により形成される酸化錫を主成分とする透明
導電膜は耐薬品性に優れ、且つ安価な原料で形成できる
利点がある反面、面積抵抗が大である。A transparent conductive film formed by a pyrolytic oxidation reaction method, especially a transparent conductive film whose main component is tin oxide formed by a pyrolytic oxidation ratio method, has the advantage of excellent chemical resistance and can be formed using inexpensive raw materials. On the other hand, the sheet resistance is large.
本発明は前記問題点を解決するためになされたものであ
って、透明導電体の面積抵抗を小さくするのに好適な製
造方法を提供するものである。The present invention has been made to solve the above problems, and provides a manufacturing method suitable for reducing the sheet resistance of a transparent conductor.
すなわち、本発明は透明基体上に熱分解酸化反応により
透明溝ｉ！膜を形成した後、熱処理を施す透明導電体の
！！！造方決方法る。That is, in the present invention, transparent grooves i! are formed on a transparent substrate by a thermal decomposition oxidation reaction. After forming a film, a transparent conductor is subjected to heat treatment! ! ! How to make it.
本発明における透明導電膜は酸化錫を主成分とした薄膜
を用いるのが好ましく、この酸化錫を主成分とした薄膜
は高温に加熱した透明基体上に錫化合物及び／又はフッ
素を含む化合物を接触させ、熱分解酸化反応により該透
明基体上に形成する。The transparent conductive film in the present invention is preferably a thin film containing tin oxide as the main component, and this thin film containing tin oxide as the main component is formed by contacting a tin compound and/or a fluorine-containing compound onto a transparent substrate heated to a high temperature. and is formed on the transparent substrate by a thermal decomposition oxidation reaction.
本発明に用いることのできる錫化合物としては、ＣＪ９
ＳｎＣ１３，５ｎＣ１４＋（ＯＨ３）２ｓｎｃ１２＋（
ＣｎＨ２１＋１）４ｓｎ（但しｎ −／ 〜＋ ） ＋
（ＣＨ３）２ＳｎＨ２＋ （０４Ｈ９）３ＳｎＨ及び
（Ｃ４Ｈ９）２ｓｎ（ＣＯＯＣＨ３）２等テアリ、フッ
素を含む化合物としては、ＣＨ３ＣＨＦ２ 、ＣＨ３Ｃ
ＣｌＦ２ ＋ＣＨＣｌＦ２ 、 ＣＨＦ３ 、 ＣＦ２
０１２ 、 ＯＦ ３Ｃ６、ＣＦ３Ｂｒ等がある。As a tin compound that can be used in the present invention, CJ9
SnC13,5nC14+(OH3)2snc12+(
CnH21+1)4sn (however, n −/ ~ + ) +
(CH3)2SnH2+ (04H9)3SnH and (C4H9)2sn(COOCH3)2, etc. Compounds containing fluorine include CH3CHF2, CH3C
ClF2 +CHClF2, CHF3, CF2
012, OF 3C6, CF3Br, etc.
本発明において、これらの錫化合物及びフッ素を含む化
合物を加熱した透明基体に接触させて熱分解酸化反応を
させるには錫化合物蒸気と７ノ素を含む化合物及び酸化
性ガスを高温の透明基体に接触させる気相化学反応法（
ＣＶＤ法）か、あるいは錫化合物等の溶液をスプレーで
加熱された基体（吹き付けるスプレー法等により行うこ
とができる。中でも、ｔＩｏｏ−ｇｏｏ″Ｃに加熱され
た透明基体に、錫化合物の蒸気及びフッ素を含む化合物
を接触させて、７）素ドープ酸化錫（以下５ｎ０２ ：
Ｆと表わす）膜を形成するＣＶＤ法が好んで用いられる
。In the present invention, in order to cause a thermal decomposition oxidation reaction by bringing these tin compounds and fluorine-containing compounds into contact with a heated transparent substrate, tin compound vapor, a compound containing 7 atoms, and an oxidizing gas are brought into contact with a heated transparent substrate. Contact gas phase chemical reaction method (
CVD method) or a spray method in which a solution of a tin compound or the like is sprayed onto a heated substrate (spraying method, etc.). Among these, a transparent substrate heated to tIoo-goo''C is sprayed with vapor of a tin compound and fluorine. 7) element-doped tin oxide (hereinafter referred to as 5n02:
A CVD method is preferably used to form a film (denoted as F).
本発明中、透明基体上に形成された透明導電膜の熱処理
は、常圧または減圧下で行なわれるのであるが、Ｎ２ま
たはＮ２雰囲気中もしくは両者の混合雰囲気中か真空中
で行うのが好ましい。In the present invention, the heat treatment of the transparent conductive film formed on the transparent substrate is carried out under normal pressure or reduced pressure, but it is preferably carried out in N2 or N2 atmosphere or a mixed atmosphere of both, or in vacuum.
また該熱処理は導電膜形成時の温度よりも低い温度、通
常１Ｉｏｏ″Ｃ以下、好ましくは２５０°Ｃ乃至３！；
Ｏ”Ｃで行なわれる。Further, the heat treatment is performed at a temperature lower than the temperature at which the conductive film is formed, usually 1 Ioo''C or less, preferably 250°C or less;
It is carried out at O”C.
透明導電体の透明導電膜を熱処理することにより、透明
導電膜の表面がわずかに還元される。By heat-treating the transparent conductive film of the transparent conductor, the surface of the transparent conductive film is slightly reduced.
大きさが２５（朋）ＸＪ（７（門）、厚み八／（闘）の
酸化珪素被膜付ソーダライムガラスを十分に洗浄、乾燥
し透明基板とした。この透明基板上に以下のようにして
透明導電膜を形成した。Soda lime glass with a silicon oxide coating of size 25 (7) x J (7 (gate), thickness 8 / (fight)) was thoroughly washed and dried to make a transparent substrate. A transparent conductive film was formed.
四塩化鋼（無水）の蒸気、水蒸気、酸素ガス、／、／−
ジフルオロエタンガスおよび窒素ガスの調整された混合
気体を用い、ＣＶＤ法によりｓｓｏ′ｃに加熱された透
明基板上に５ｎ０２ ：Ｆ膜を形成し、試料とした。得
られた試料の膜厚は、２００ＯＡであり面積抵抗（ＲＯ
）は、２！；、０Ω／口であった。Tetrachloride steel (anhydrous) steam, water vapor, oxygen gas, /, /-
A 5n02:F film was formed on a transparent substrate heated to sso'c by the CVD method using an adjusted gas mixture of difluoroethane gas and nitrogen gas, and used as a sample. The film thickness of the obtained sample was 200OA, and the area resistance (RO
) is 2! ;, 0Ω/mouth.
これらの試料をＮ２雰囲気中で圧力を変え１．３００”
Ｃ，３０分間熱処理を行なった。各圧力下で熱処理を行
なった試料について、それぞれ熱処理後の面積抵抗（Ｒ
１）を測定し、Ｒ１／ＲＣＩを求めた。得られた結果を
第１表に示す。第１表より明らかなように、熱処理によ
り５ｎ０２：Ｆ膜の面積抵抗は小さくなる。また、熱処
理の前後において、透過率の変化は全く認められなかっ
た。These samples were tested in a N2 atmosphere at varying pressures of 1.30”
C. Heat treatment was performed for 30 minutes. Regarding the samples heat-treated under each pressure, the area resistance (R
1) was measured and R1/RCI was determined. The results obtained are shown in Table 1. As is clear from Table 1, the heat treatment reduces the sheet resistance of the 5n02:F film. Moreover, no change in transmittance was observed before and after the heat treatment.
第 ｌ 表
〔実施例コ〕
実施例Ｉと同様にして、５ｎ０２ ：ｌｉ’膜を透明基
板上に形成し試料とした。試料の膜厚は２０００１Ｌで
あり、面積抵抗（Ｒｏ）は、２ｊ、０Ω／口であった。Table l [Example 1] In the same manner as in Example I, a 5n02:li' film was formed on a transparent substrate and used as a sample. The film thickness of the sample was 20001L, and the area resistance (Ro) was 2j, 0Ω/mouth.
これらの試料を、Ｎ２雰囲気中／２１１Ｐａの圧力下で
、温度を変えｉｏ分間熱処理を行なった。各温度で熱処
理を行なった試料について、それぞれ熱処理後の面積抵
抗（Ｒ２）を測定し、Ｒ２／ＲＯを求めた。得られた結
果を第−表に示す。表より明らかなように、熱処理によ
り、５ｎ０２：Ｆ膜の面積抵抗は小さくなる。また、熱
処理の前後において透過率の変化は全く認められなかっ
た。These samples were subjected to heat treatment for io minutes at varying temperatures in a N2 atmosphere/under a pressure of 211 Pa. Regarding the samples heat-treated at each temperature, the area resistance (R2) after the heat treatment was measured, and R2/RO was determined. The results obtained are shown in Table 1. As is clear from the table, the heat treatment reduces the sheet resistance of the 5n02:F film. Furthermore, no change in transmittance was observed before and after the heat treatment.
第 λ 表
〔実施例３〕
実施例１と同様にして、５ｎ０２：Ｆ膜をガラス上に形
成し、試料とした。試料の膜厚は、２００ＯＡであり、
面積抵抗（Ｒｏ）はｕｊ、０９７口であった。Table λ [Example 3] In the same manner as in Example 1, a 5n02:F film was formed on glass and used as a sample. The film thickness of the sample is 200OA,
The area resistance (Ro) was uj, 097 mouths.
これらの試料をＨ２雰囲気中で圧力を変え、３００”ｃ
、ｉｏ分間熱処理を行なった。各圧力下で熱処理を行な
った試料について、それぞれ熱処理後の面積抵抗（Ｒ３
）を測定し、Ｒ３／Ｒｏ を求めた。得られた結果を第
３表に示す。表より明らかなように減圧下の熱処理によ
り５ｎ０２７Ｆ膜の面積抵抗は小さくなる。また、熱処
理の前後において、透過率の変化は全く認められなかっ
た。These samples were heated at 300”c under varying pressures in an H2 atmosphere.
, io minutes of heat treatment was performed. Regarding the samples heat-treated under each pressure, the area resistance (R3
) was measured to determine R3/Ro. The results obtained are shown in Table 3. As is clear from the table, the heat treatment under reduced pressure reduces the sheet resistance of the 5n027F film. Moreover, no change in transmittance was observed before and after the heat treatment.
第 ３ 表
〔実施例≠〕
実施例１と同様にして、５ｎ０２ ：Ｆ膜をガラス上に
形成し、試料とした。試料の膜厚は２０００にであり、
面積抵抗（ＲＯ）は２ｊ、０Ω／口であった。Table 3 [Example≠] In the same manner as in Example 1, a 5n02:F film was formed on glass and used as a sample. The film thickness of the sample is 2000 mm.
The area resistance (RO) was 2j, 0Ω/mouth.
これらの試料をＨ２雰曲気中３３Ｐａの圧力下で温度を
変え、１０分間熱処理を行なった。各温度で熱処理を行
なった試料について、それぞれ熱処理後の面積抵抗（Ｒ
４）を測定し、Ｒ４／Ｒｏ を求めた。These samples were heat-treated for 10 minutes under a pressure of 33 Pa in an H2 atmosphere at varying temperatures. Regarding the samples heat-treated at each temperature, the area resistance (R
4) was measured to determine R4/Ro.
得られた結果を第４表に示す。表より明らかなように、
熱処理により５ｎ０２：Ｆ膜の面積抵抗は小さくなる。The results obtained are shown in Table 4. As is clear from the table,
The heat treatment reduces the sheet resistance of the 5n02:F film.
また、熱処理の前後において、透過率の変化は全く認め
られなかった。Moreover, no change in transmittance was observed before and after the heat treatment.
第 ｌ 表
〔実施例！〕
実施例／と同様にして、５ｎ０２：Ｆ膜をガラス上に形
成し、試料とした。試料の膜厚は２０００にであり、面
積抵抗は２！；、０Ω／口であった。Table l [Examples! ] A 5n02:F film was formed on glass and used as a sample in the same manner as in Example. The film thickness of the sample is 2000, and the sheet resistance is 2! ;, 0Ω/mouth.
試料を／、７６Ｘ１０−３Ｐａの真空中、３２０”Ｃで
１００分間熱処理を行なった。熱処理後の面積抵抗は２
１．６Ω／口であり、明らかに、熱処理により５ｎ０２
：Ｆ膜の面積抵抗は小さくなっている。また、熱処理の
前後において、透過率の変化は全く認められなかった。The sample was heat-treated at 320"C for 100 minutes in a vacuum of 76 x 10-3 Pa.The sheet resistance after heat treatment was 2.
1.6Ω/mouth, obviously due to heat treatment 5n02
:The sheet resistance of the F film is small. Moreover, no change in transmittance was observed before and after the heat treatment.
本発明は、透明導電膜を熱処理することにより低抵抗で
、高透明性の透明導電体を得ることができる。According to the present invention, a transparent conductor with low resistance and high transparency can be obtained by heat-treating a transparent conductive film.
Claims (5)
を形成した後、熱処理を施すことを特徴とする透明導電
体の製造方法。(1) A method for producing a transparent conductor, which comprises forming a transparent conductive film on a transparent substrate by a thermal decomposition oxidation reaction, and then subjecting it to heat treatment.
る特許請求の範囲第１項に記載の透明導電体の製造方法
。(2) The method for manufacturing a transparent conductor according to claim 1, wherein the transparent conductive film is a thin film containing tin oxide as a main component.
許請求の範囲第１項又は第２項に記載の透明導電体の製
造方法。(3) The method for manufacturing a transparent conductor according to claim 1 or 2, wherein the heat treatment is performed under normal pressure or reduced pressure.
われる特許請求の範囲第３項に記載の透明導電体の製造
方法。(4) The method for manufacturing a transparent conductor according to claim 3, wherein the heat treatment is performed in an H_2 or N_2 atmosphere.
温度で行なわれる特許請求の範囲第３項又は第４項に記
載の透明導電体の製造方法。(5) The method for manufacturing a transparent conductor according to claim 3 or 4, wherein the heat treatment is performed at a temperature lower than the temperature at which the transparent conductive film is formed.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62016387A JPS63184210A (en) | 1987-01-27 | 1987-01-27 | Manufacture of transparent conductor |
| CA000557389A CA1318193C (en) | 1987-01-27 | 1988-01-26 | Transparent electrical conductor fabrication |
| US07/148,827 US4952423A (en) | 1987-01-27 | 1988-01-27 | Production of a transparent electric conductor |
| EP88400179A EP0278836A3 (en) | 1987-01-27 | 1988-01-27 | Manufacture of a transparent electrical conductor |
| BR8800312A BR8800312A (en) | 1987-01-27 | 1988-01-27 | PROCESS OF MANUFACTURING A TRANSPARENT ELECTRIC CONDUCTOR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62016387A JPS63184210A (en) | 1987-01-27 | 1987-01-27 | Manufacture of transparent conductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63184210A true JPS63184210A (en) | 1988-07-29 |
Family
ID=11914850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62016387A Pending JPS63184210A (en) | 1987-01-27 | 1987-01-27 | Manufacture of transparent conductor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4952423A (en) |
| EP (1) | EP0278836A3 (en) |
| JP (1) | JPS63184210A (en) |
| BR (1) | BR8800312A (en) |
| CA (1) | CA1318193C (en) |
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-
1987
- 1987-01-27 JP JP62016387A patent/JPS63184210A/en active Pending
-
1988
- 1988-01-26 CA CA000557389A patent/CA1318193C/en not_active Expired - Fee Related
- 1988-01-27 US US07/148,827 patent/US4952423A/en not_active Expired - Fee Related
- 1988-01-27 EP EP88400179A patent/EP0278836A3/en not_active Withdrawn
- 1988-01-27 BR BR8800312A patent/BR8800312A/en active Search and Examination
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6551715B1 (en) | 1999-10-20 | 2003-04-22 | Nippon Sheet Glass Co., Ltd. | Glass sheet with conductive film and glass article using the same |
| JP2011504293A (en) * | 2007-11-02 | 2011-02-03 | エージーシー フラット グラス ノース アメリカ，インコーポレイテッド | Transparent conductive oxide film for thin film photovoltaic application and method of manufacturing the same |
| US9181124B2 (en) | 2007-11-02 | 2015-11-10 | Agc Flat Glass North America, Inc. | Transparent conductive oxide coating for thin film photovoltaic applications and methods of making the same |
| JP2013100577A (en) * | 2011-11-08 | 2013-05-23 | Asahi Glass Co Ltd | Method for forming fluorine-doped tin oxide film |
Also Published As
| Publication number | Publication date |
|---|---|
| US4952423A (en) | 1990-08-28 |
| BR8800312A (en) | 1988-09-06 |
| CA1318193C (en) | 1993-05-25 |
| EP0278836A2 (en) | 1988-08-17 |
| EP0278836A3 (en) | 1989-05-03 |
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