JPS63178359U - - Google Patents
Info
- Publication number
- JPS63178359U JPS63178359U JP7046487U JP7046487U JPS63178359U JP S63178359 U JPS63178359 U JP S63178359U JP 7046487 U JP7046487 U JP 7046487U JP 7046487 U JP7046487 U JP 7046487U JP S63178359 U JPS63178359 U JP S63178359U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- emitting diode
- chromium
- mainly made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05075—Plural internal layers
- H01L2224/0508—Plural internal layers being stacked
- H01L2224/05082—Two-layer arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案実施例の発光ダイオードの模式
図で第２図はその表面電極の特性図である。
１……化合物半導体、２……表面電極、３……
裏面電極、２１……第１の層、２２……第２の層
、２３……第３の層。
FIG. 1 is a schematic diagram of a light emitting diode according to an embodiment of the present invention, and FIG. 2 is a characteristic diagram of its surface electrode. 1...Compound semiconductor, 2...Surface electrode, 3...
Back electrode, 21...first layer, 22...second layer, 23...third layer.
Claims (1)
する第１の層と、第１の層上に設けられたクロム
からなる第２の層と、第２の層上に設けられたア
ルミニウムを主体とする第３の層とからなるワイ
ヤボンド用電極を具備した事を特徴とする発光ダ
イオード。 (2) 前記第２の層は７５μｍ以上ある事を特徴
とする前記実用新案登録請求の範囲第１項記載の
発光ダイオード。[Claims for Utility Model Registration] (1) A first layer mainly made of gold provided on the surface of a compound semiconductor, a second layer made of chromium provided on the first layer, and a second layer made of chromium provided on the first layer. A light emitting diode characterized by comprising a wire bonding electrode consisting of a third layer mainly made of aluminum provided on the layer. (2) The light emitting diode according to claim 1, wherein the second layer has a thickness of 75 μm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046487U JPS63178359U (en) | 1987-05-12 | 1987-05-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046487U JPS63178359U (en) | 1987-05-12 | 1987-05-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63178359U true JPS63178359U (en) | 1988-11-18 |
Family
ID=30912123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7046487U Pending JPS63178359U (en) | 1987-05-12 | 1987-05-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63178359U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08250540A (en) * | 1995-03-13 | 1996-09-27 | Toyoda Gosei Co Ltd | Semiconductor device |
| US9000477B2 (en) | 2002-04-09 | 2015-04-07 | Lg Innotek Co., Ltd. | Vertical topology light-emitting device |
-
1987
- 1987-05-12 JP JP7046487U patent/JPS63178359U/ja active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08250540A (en) * | 1995-03-13 | 1996-09-27 | Toyoda Gosei Co Ltd | Semiconductor device |
| US9000477B2 (en) | 2002-04-09 | 2015-04-07 | Lg Innotek Co., Ltd. | Vertical topology light-emitting device |
| US9209360B2 (en) | 2002-04-09 | 2015-12-08 | Lg Innotek Co., Ltd. | Vertical topology light-emitting device |
| US9478709B2 (en) | 2002-04-09 | 2016-10-25 | Lg Innotek Co., Ltd. | Vertical topology light emitting device |
| US9847455B2 (en) | 2002-04-09 | 2017-12-19 | Lg Innotek Co., Ltd. | Vertical topology light emitting device |
| US10147847B2 (en) | 2002-04-09 | 2018-12-04 | Lg Innotek Co., Ltd. | Vertical topology light emitting device |
| US10453998B2 (en) | 2002-04-09 | 2019-10-22 | Lg Innotek Co. Ltd. | Vertical topology light emitting device |
| US10644200B2 (en) | 2002-04-09 | 2020-05-05 | Lg Innotek Co., Ltd. | Vertical topology light emitting device |
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