JPS63153814A - Adhesive sheet for sticking wafer - Google Patents
Adhesive sheet for sticking waferInfo
- Publication number
- JPS63153814A JPS63153814A JP62043744A JP4374487A JPS63153814A JP S63153814 A JPS63153814 A JP S63153814A JP 62043744 A JP62043744 A JP 62043744A JP 4374487 A JP4374487 A JP 4374487A JP S63153814 A JPS63153814 A JP S63153814A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- pressure sensitive
- adhesive
- water
- sensitive adhesives
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001070 adhesive effect Effects 0.000 title claims description 76
- 239000000853 adhesive Substances 0.000 title claims description 75
- 239000000463 material Substances 0.000 claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims description 84
- 239000012790 adhesive layer Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 25
- 239000004820 Pressure-sensitive adhesive Substances 0.000 abstract description 18
- 239000000178 monomer Substances 0.000 abstract description 14
- 229920001577 copolymer Polymers 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 230000002411 adverse Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 abstract description 5
- 125000005396 acrylic acid ester group Chemical group 0.000 abstract description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract description 2
- 238000005498 polishing Methods 0.000 description 17
- 239000008213 purified water Substances 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 10
- 125000000217 alkyl group Chemical group 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- -1 polyethylene Polymers 0.000 description 8
- 239000002202 Polyethylene glycol Substances 0.000 description 7
- 229920001223 polyethylene glycol Polymers 0.000 description 7
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000002736 nonionic surfactant Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- MZVQCMJNVPIDEA-UHFFFAOYSA-N [CH2]CN(CC)CC Chemical group [CH2]CN(CC)CC MZVQCMJNVPIDEA-UHFFFAOYSA-N 0.000 description 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003522 acrylic cement Substances 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920003169 water-soluble polymer Polymers 0.000 description 2
- 239000004246 zinc acetate Substances 0.000 description 2
- PNKZBZPLRKCVLI-UHFFFAOYSA-N (2-methylpropan-2-yl)oxybenzene Chemical compound CC(C)(C)OC1=CC=CC=C1 PNKZBZPLRKCVLI-UHFFFAOYSA-N 0.000 description 1
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 1
- JHPBZFOKBAGZBL-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylprop-2-enoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)=C JHPBZFOKBAGZBL-UHFFFAOYSA-N 0.000 description 1
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 229940091181 aconitic acid Drugs 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- CRBREIOFEDVXGE-UHFFFAOYSA-N dodecoxybenzene Chemical compound CCCCCCCCCCCCOC1=CC=CC=C1 CRBREIOFEDVXGE-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 1
- 229910021513 gallium hydroxide Inorganic materials 0.000 description 1
- DNUARHPNFXVKEI-UHFFFAOYSA-K gallium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ga+3] DNUARHPNFXVKEI-UHFFFAOYSA-K 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002433 hydrophilic molecules Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- GSGDTSDELPUTKU-UHFFFAOYSA-N nonoxybenzene Chemical compound CCCCCCCCCOC1=CC=CC=C1 GSGDTSDELPUTKU-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920006264 polyurethane film Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Adhesive Tapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
【発明の詳細な説明】
1哩例技術分盟
本発明は半導体ウェハの裏面研摩用粘着シートに関し、
さらに詳しくは、エツチングなどにより表面にパターン
が形成された半導体ウェハの裏面を研摩する際に用いら
れるウェハ貼着用粘着シートに関する。[Detailed Description of the Invention] 1. Technical Field The present invention relates to an adhesive sheet for polishing the back surface of a semiconductor wafer.
More specifically, the present invention relates to a wafer adhesion adhesive sheet used for polishing the back surface of a semiconductor wafer whose surface has a pattern formed by etching or the like.
aの 1単tらびに のロ
シリコン、ガリウムヒ素などの半導体ウェハの表面には
、エツチングあるいはリフトオフ法などによってパター
ンが形成される。次いで表面にパターンが形成されたウ
ェハは、通常、その表面に粘着シートが貼着された状態
で、その裏面にグラインダーなどにより研摩処理が加え
られる。パターンが形成されたウェハの裏面に研摩を加
える目的は、第1にエツチング工程時にウェハ表面に酸
化物皮膜が形成されることがあるため、この酸化物皮膜
を除去することにあり、第2にパターンが形成されたウ
ェハの厚みを調節することにある。A pattern is formed on the surface of a semiconductor wafer made of silicon, gallium arsenide, etc. by etching or a lift-off method. Next, the wafer with a pattern formed on its surface is usually polished with a grinder or the like on its back surface, with an adhesive sheet attached to the surface. The purpose of polishing the back surface of a wafer on which a pattern has been formed is, first, to remove an oxide film that may be formed on the wafer surface during the etching process, and second, to remove this oxide film. The purpose is to adjust the thickness of a wafer on which a pattern is formed.
ところで、表面にパターンが形成されたウェハの裏面に
研摩処理を加えるに際しては、生ずる研摩屑を除去する
ため、そして研摩時に発生する熱を除去するために、精
製水によりウェハ裏面を洗いなからウェハの裏面研摩処
理を行なっている。By the way, when polishing the back side of a wafer with a pattern formed on its front side, the back side of the wafer must be washed with purified water to remove polishing debris and heat generated during polishing. The back surface is polished.
したがってウェハの裏面研摩処理を行なうに際して、ウ
ェハ表面に形成されたパターンを保護するためにウェハ
表面に貼着される粘着シートは、耐水性を有している必
要がある。このような粘着シートでは、粘着剤として溶
剤型アクリル系粘着剤が広く用いられてきた。Therefore, when polishing the back surface of a wafer, the adhesive sheet that is attached to the wafer surface in order to protect the pattern formed on the wafer surface must have water resistance. In such pressure-sensitive adhesive sheets, solvent-based acrylic pressure-sensitive adhesives have been widely used as pressure-sensitive adhesives.
このようにしてウェハ表面の研摩処、理が終了した後、
粘着シートはウェハ表面から剥離されるが、この際どう
してもパターンが形成されたウェハ表面にアクリル系な
どの粘着剤が付着してしまうことがあった。このため、
ウェハ表面に付着した粘着剤を除去する必要があった。After polishing and processing the wafer surface in this way,
Although the adhesive sheet is peeled off from the wafer surface, an acrylic adhesive or the like inevitably adheres to the patterned wafer surface. For this reason,
It was necessary to remove the adhesive that had adhered to the wafer surface.
ウェハ表面に付着したアクリル系などの粘着剤の除去は
、従来、ウェハ表面を、トリクレンなどの含塩素系有機
溶剤で洗浄した後精製水で洗浄することによって行なわ
れてきた。ところがウェハ表面の洗浄に用いられるトリ
クレンなどの含塩素溶剤は、人体に対して悪影響を与え
る危険性が指摘されているため、その使用を控えること
が望まれている。また上記のようにウェハ表面の洗浄工
程は、トリクレンなどの有機溶剤で洗浄した後精製水で
洗浄するという2つの工程からなっているため、手間が
かかるという問題点があった。このため、トリクレンな
ど含塩素系有機溶剤に代わって、精製水によってウェハ
表面を洗浄してウェハ表面に付着した粘着剤を除去する
ことができれば、人体に対する危険性もなく、しかも1
つの工程でウェハ表面の洗浄工程が終了しうるという大
きな効果が得られる。ところが上述のように、ウェハ表
面の研摩工程は、ウェハ裏面を精製水により洗いながら
行なっているため、もし粘着シートの粘着剤として従来
から水溶性粘着剤として広く用いられる水溶性の粘着剤
を用いたのでは、上記の研摩工程中に粘着剤が溶解して
しまい、ウェハ表面と粘着シートとの間にウェハ研摩屑
が入り込んで、ウェハ表面に形成されたパターンが破壊
されてしまうという問題点が生じてしまう。Removal of adhesives such as acrylic adhesives adhering to the wafer surface has conventionally been carried out by cleaning the wafer surface with a chlorinated organic solvent such as trichloride, and then cleaning it with purified water. However, it is desirable to refrain from using chlorine-containing solvents such as trichlene, which are used to clean the wafer surface, because it has been pointed out that they may have an adverse effect on the human body. Further, as mentioned above, the process of cleaning the wafer surface consists of two processes: cleaning with an organic solvent such as trichlene and then cleaning with purified water, which poses the problem of being time-consuming. For this reason, if the wafer surface could be cleaned with purified water to remove the adhesive attached to the wafer surface instead of using chlorine-containing organic solvents such as trichlene, there would be no danger to the human body, and it would be possible to
A great effect can be obtained in that the wafer surface cleaning process can be completed in just one process. However, as mentioned above, the polishing process on the wafer surface is performed while washing the back side of the wafer with purified water. However, there is a problem in that the adhesive dissolves during the polishing process mentioned above, and wafer polishing debris gets between the wafer surface and the adhesive sheet, destroying the pattern formed on the wafer surface. It will happen.
■咀例貝拍
本発明は、上記のような従来技術に伴なう問題点を一挙
に解決しようとするものであって、表面にパターンが形
成されたウェハの裏面を研摩処理する際に、ウェハ表面
に貼着される粘着シートであって、研摩処理の終了後に
ウェハ表面に付着した粘着剤をトリクレンなどの有機溶
剤を用いずに水によって洗浄することによって除去する
ことができ、したがって人体に悪影響を与える危険性が
なく、しかもウェハ表面にけ着した粘着剤を1工程によ
って除去することができるような粘着シートを提供する
ことを目的としている。The present invention attempts to solve all of the problems associated with the above-mentioned conventional techniques at once. It is an adhesive sheet that is attached to the wafer surface, and after the polishing process is finished, the adhesive attached to the wafer surface can be removed by washing with water without using an organic solvent such as Triclean, and therefore it is not harmful to the human body. It is an object of the present invention to provide a pressure-sensitive adhesive sheet that does not pose a risk of adverse effects and can remove the pressure-sensitive adhesive adhering to the surface of a wafer in one step.
及哩り鳳!
本発明に係るウェハ貼着用粘着シートは、表面にパター
ンが形成されたウェハの裏面を研摩処理する際にウェハ
表面に貼着される粘着シートであって、基材面上に、粘
着剤層として水膨潤性粘着剤が塗布されていることを特
徴としている。Reach out! The adhesive sheet for wafer adhesion according to the present invention is an adhesive sheet that is applied to the surface of a wafer when the back surface of the wafer having a pattern formed thereon is polished, and is applied as an adhesive layer on the base material surface. It is characterized by being coated with a water-swellable adhesive.
本発明に係るウェハ貼着用粘着シートは、表面にパター
ンが形成されたウェハの裏面を研摩処理する際にウェハ
表面に貼着されるシートであって、基材面上に、粘着剤
層として水膨潤性粘着剤が塗布されて形成されているな
め、ウェハ表面の研摩処理の終了後にウェハ表面から粘
着シートを剥離させた際にウェハ表面に粘着剤が付着し
ていても、トリクレンなどの有機溶剤を用いずに水によ
って洗浄すれば粘着剤を除去することができる。したが
って人体に悪影響を与える危険性がなく、しかもウェハ
表面に付着した粘着剤を1工程によって除去することが
できる。The adhesive sheet for wafer adhesion according to the present invention is a sheet that is applied to the surface of a wafer when the back surface of the wafer having a pattern formed thereon is polished, and is formed by applying water as an adhesive layer on the base material surface. Since the swellable adhesive is applied to the surface of the wafer, organic solvents such as trichlene may The adhesive can be removed by washing with water without using. Therefore, there is no risk of adversely affecting the human body, and the adhesive adhering to the wafer surface can be removed in one step.
l呪a且体煎皿朋
以下本発明に係るウェハ貼着用粘着シートを具体的に説
明する。The adhesive sheet for attaching wafers according to the present invention will be specifically described below.
本発明に係るウェハ貼着用粘着シート1は、その断面図
が第1図に示されるように、基材2とこの表面に塗着さ
れた粘着剤層3とからなっており、使用前にはこの粘着
剤層3を保護するため、第2図に示すように粘着剤3の
上面に剥離性シート4を仮粘着しておくことが好ましい
。The adhesive sheet 1 for pasting wafers according to the present invention, as its cross-sectional view is shown in FIG. In order to protect this adhesive layer 3, it is preferable to temporarily adhere a releasable sheet 4 to the upper surface of the adhesive 3 as shown in FIG.
本発明に係るウェハ貼着用粘着シートの形状は、テープ
状、ラベル状などあらゆる形状をとりうる。The shape of the adhesive sheet for wafer adhesion according to the present invention can be any shape such as a tape shape or a label shape.
基材2としては、耐水性および耐熱性に優れているもの
が適し、特に合成樹脂フィルムが適する。As the base material 2, a material having excellent water resistance and heat resistance is suitable, and a synthetic resin film is particularly suitable.
このような基材2としては、具体的に、ポリエチレンフ
ィルム、ポリプロピレンフィルム、ポリ塩化ビニルフィ
ルム、ポリエチレンテレフタレートフィルム、ポリブチ
レンテレフタレートフィルム、ポリブテンフィルム、ポ
リブタジェンフィルム、ポリウレタンフィルム、ポリメ
チルペンテンフィルム、エチレン酸とフィルムなどが用
いられる。また基材2として、架橋ポリオレフィンある
いはエチレン−メタクリル酸共重合体フィルムを用いる
こともできる。Specific examples of such a base material 2 include polyethylene film, polypropylene film, polyvinyl chloride film, polyethylene terephthalate film, polybutylene terephthalate film, polybutene film, polybutadiene film, polyurethane film, polymethylpentene film, and ethylene film. Acid and film are used. Further, as the base material 2, a crosslinked polyolefin or an ethylene-methacrylic acid copolymer film can also be used.
本発明では、上記のような基材面上に、粘着剤層3とし
て水膨潤性粘着剤が塗布されている。In the present invention, a water-swellable adhesive is applied as the adhesive layer 3 on the base material surface as described above.
この水膨潤性粘着剤とは、不飽和カルボン酸含有モノマ
ーとアクリル酸エステル系モノマーを構成単位とする共
重合体において、その共重合体同士がからみ合ったり、
架橋していて、水と接触すると有限膨潤する粘着剤であ
る。また実用上、その粘着剤の水溶性あるいは粘着特性
を変化させる必要がある場合には、通常使用される親水
性可塑剤あるいは親水性エポキシ化合物を上記水膨潤性
粘着剤と組み合せて用いてもよい。This water-swellable adhesive is a copolymer whose constituent units are an unsaturated carboxylic acid-containing monomer and an acrylic acid ester monomer, and the copolymers are entangled with each other.
It is a cross-linked adhesive that swells finitely when it comes in contact with water. In addition, if it is necessary to change the water solubility or adhesive properties of the adhesive for practical purposes, a commonly used hydrophilic plasticizer or hydrophilic epoxy compound may be used in combination with the water-swellable adhesive. .
上記のような水膨潤性粘着剤としては、たとえば特公昭
49−23294号公報に記載されているような粘着剤
を用いることができる。As the above-mentioned water-swellable adhesive, for example, the adhesive described in Japanese Patent Publication No. 49-23294 can be used.
すなわち、(A)エチレンオキシド基を親水性成分とす
る非イオン界面活性剤の1種または2種以上、および(
B>−re記式(I)で示される構成単位の1種または
2種以上40〜99モル%と、下記式(II)で示され
る構成単位の1種または2種以上60〜1モル%とで構
成される共重合体の1種または2種以上からなり、必要
に応じて、成分(B)の有するカルボキシル基を酢酸亜
鉛あるいは塩化マグネシウムなどのカルボキシル基と反
応する架橋剤で架橋させて得られる粘着剤を用いること
ができる。なお架橋剤による架橋時に水酸化ガリウムな
どのアルカリ性化合物を共存させでもよい。That is, (A) one or more nonionic surfactants having an ethylene oxide group as a hydrophilic component, and (
B>-re 40 to 99 mol% of one or more structural units represented by formula (I) and 60 to 1 mol% of one or more structural units represented by formula (II) below If necessary, the carboxyl group of component (B) is crosslinked with a crosslinking agent that reacts with the carboxyl group, such as zinc acetate or magnesium chloride. The resulting adhesive can be used. Note that an alkaline compound such as gallium hydroxide may be present during crosslinking using a crosslinking agent.
HR1
HR2
(式中R1は水素、塩素または低級アルキル基でCON
HCH20Hl CH20H,C2H40H1−OH
1(さ てあり、ここでR3は炭素数1〜8のアルキル
基である。)X Z
(II) −C−C−
Y C00H
(式中、x、y、zは、同一であっても互いに異なって
いてもよく、水素、塩素、低級アルキルまたは−COO
R4、−COOHl CH2C00H1CH2C00R
4であり、ここでR4は炭素数1〜4のアルキル基であ
る。)
成分(A>であるエチレンオキシド基を親水性成分とす
る非イオン界面活性剤としては、具体的には下記のよう
なものが用いられる。HR1 HR2 (In the formula, R1 is hydrogen, chlorine, or a lower alkyl group, and CON
HCH20Hl CH20H, C2H40H1-OH
1 (here, R3 is an alkyl group having 1 to 8 carbon atoms) may be different from each other, hydrogen, chlorine, lower alkyl or -COO
R4, -COOHl CH2C00H1CH2C00R
4, where R4 is an alkyl group having 1 to 4 carbon atoms. ) Specifically, the following nonionic surfactants having an ethylene oxide group as a hydrophilic component, which is component (A>), are used.
(i ) OH(C2H40) a (C3H60)
b(C2H40)、H
(式中、a、b、cは20〜80の整数である。)(i
)RA <C2H40)。H
(式中、Rは炭素数6〜18のアルキル基、炭素数4〜
20のアルキル基を有するアルキルフェニル基、または
H(またはCH3)
Aは酸素、硫黄または−C00l−CONH1CON(
C2H40)。H,PO4H,PO4(C2H40)、
Hであり、eは2〜80の整数である。)
0(C2H40)yH
(式中、Rは炭素数6〜18のアルキル基であり、x、
y、 zは2〜40の整数である。)上記のような(
A)非イオン界面活性剤としては、具体的には、ポリエ
チレングリコールノニルフェニルエーテル、ポリエチレ
ングリコールソルビタンモノオレイルエステル、ポリエ
チレングリコールラウリルエーテル、ポリエチレングリ
コールとポリプロピレングリコールのブロックポリマー
、ポリエチレングリコールラウリルフェニルエーテル、
ポリエチレングリコールt−ブチルフェニルエーテルな
どが用いられる。(i) OH(C2H40) a (C3H60)
b(C2H40), H (wherein a, b, c are integers of 20 to 80) (i
)RA<C2H40). H (wherein R is an alkyl group having 6 to 18 carbon atoms, 4 to 18 carbon atoms,
Alkylphenyl group having 20 alkyl groups, or H (or CH3) A is oxygen, sulfur or -C00l-CONH1CON (
C2H40). H, PO4H, PO4 (C2H40),
H, and e is an integer from 2 to 80. ) 0(C2H40)yH (wherein, R is an alkyl group having 6 to 18 carbon atoms, x,
y and z are integers from 2 to 40. ) as above (
A) Nonionic surfactants include polyethylene glycol nonylphenyl ether, polyethylene glycol sorbitan monooleyl ester, polyethylene glycol lauryl ether, block polymers of polyethylene glycol and polypropylene glycol, polyethylene glycol lauryl phenyl ether,
Polyethylene glycol t-butylphenyl ether and the like are used.
成分(B)における上記式<I)で示される構成単位は
、たとえば酢酸ビニルなどのビニルエステル、アクリル
酸エチルなどのアクリル酸エステル、メタクリル酸エチ
ルなどのメタクリル酸エステル、エチレン、スチレン、
メチルビニルエーテル、塩化ビニル、アクリロニトリル
などのモノマーから導入される。また成分(B)におけ
る上記式(n)で示される構成単位は、カルボキシル基
を有するモノマー、たとえばアクリル酸、メタクリル酸
、クロトン酸、イタコン酸、マレイン酸、フマル酸、ア
コニット酸、モノアルキルマレイン酸、モノアルキルフ
マル酸、モノアルキルイタコン酸などから導入される。The structural unit represented by the above formula <I) in component (B) is, for example, a vinyl ester such as vinyl acetate, an acrylic ester such as ethyl acrylate, a methacrylic ester such as ethyl methacrylate, ethylene, styrene,
It is introduced from monomers such as methyl vinyl ether, vinyl chloride, and acrylonitrile. In addition, the structural unit represented by the above formula (n) in component (B) is a monomer having a carboxyl group, such as acrylic acid, methacrylic acid, crotonic acid, itaconic acid, maleic acid, fumaric acid, aconitic acid, monoalkylmaleic acid. , monoalkyl fumaric acid, monoalkyl itaconic acid, etc.
上記成分<A)と成分(B)とは、相溶しなければなら
ず、しかも得られる粘着剤が水膨潤性でなければならな
い。このため、成分(A>と成分<B)との量的な関係
が定められている。The above component <A) and component (B) must be compatible with each other, and the resulting adhesive must be water-swellable. For this reason, a quantitative relationship between component (A> and component <B) is determined.
また場合によっては、上記のような成分(A)および成
分(A)とともに、グリシジルエーテル系のエポキシ化
合物を用いることもできる。In some cases, a glycidyl ether-based epoxy compound can also be used together with component (A) and component (A) as described above.
また水膨潤性粘着剤として、特開昭59−157162
号公報に記載されているような粘着剤を用いることもで
きる。Also, as a water-swellable adhesive, JP-A-59-157162
It is also possible to use an adhesive as described in the above publication.
すなわち、(A)水溶性ポリマーと、(B)重合して得
られるポリマーが水溶性あるいは水膨潤性である(メタ
)アクリル酸エステルモノマーとからなる粘着剤を用い
ることができる。That is, an adhesive consisting of (A) a water-soluble polymer and (B) a (meth)acrylic acid ester monomer whose polymer obtained by polymerization is water-soluble or water-swellable can be used.
具体的には成分(A)としては、式
%式%
は炭素数2〜4のアルキレン基であり、R3は炭素数1
以上のアルキル基であり、nは1以上の整数である)で
表わされる(メタ)アクリル酸エステルモノマー、アク
リル酸、ビニルピロリドン、アクリルアミド、ジメチル
アミノエチル(メタ)アクリレート、ジエチルアミノエ
チル(メタ)アクリレート、ビニルメチルエーテルなど
が用いられる。また場合によっては、水溶性ポリマーと
して、上記のようなモノマーにアクリル酸エステル、酢
酸ビニル、スチレン等を30重量部までの量で共重合さ
せて得られるポリマーも用いることができる。Specifically, as component (A), the formula % is an alkylene group having 2 to 4 carbon atoms, and R3 is an alkylene group having 1 carbon number.
(meth)acrylic acid ester monomers, acrylic acid, vinylpyrrolidone, acrylamide, dimethylaminoethyl (meth)acrylate, diethylaminoethyl (meth)acrylate, Vinyl methyl ether and the like are used. In some cases, a polymer obtained by copolymerizing the above-mentioned monomers with an acrylic ester, vinyl acetate, styrene, etc. in an amount of up to 30 parts by weight may also be used as the water-soluble polymer.
また成分(B)としては、具体的には、(メタ)アクル
酸エステルモノマー、ジメチルアミンエチル(メタ)ア
クリレート、ジエチルアミノエチル(メタ)アクリレー
トが用いられる。Further, as component (B), specifically, (meth)acrylic acid ester monomer, dimethylamine ethyl (meth)acrylate, and diethylaminoethyl (meth)acrylate are used.
さらに水膨潤性粘着剤として、特開昭56−70077
号公報に記載されているような粘着剤を用いることもで
きる。Furthermore, as a water-swellable adhesive, JP-A-56-70077
It is also possible to use an adhesive as described in the above publication.
すなわち、(A>カルボキシル基含有モノマー10〜4
0モル%、アルキル基の炭素数が4以上である(メタ)
アクリル酸アルキルエステル60〜90モル%および上
記以外のとニルモノマー0〜20モル%よりなる共重合
体中のカルボキシル基を中和した共重合体塩および(B
)式R10(R20)nR3(式中、R1は炭素数1〜
4のアルキル基であり、R2は炭素数2〜4のアルキレ
ン基であり、R3は水素、炭素数1〜4のアルキル基ま
たはアセチル基であり、nは1〜6の整数である)で表
わされる親水性化合物からなる水膨潤性粘着剤を用いる
ことができる。That is, (A>carboxyl group-containing monomer 10-4
0 mol%, the number of carbon atoms in the alkyl group is 4 or more (meta)
A copolymer salt obtained by neutralizing the carboxyl group in a copolymer consisting of 60 to 90 mol% of an acrylic acid alkyl ester and 0 to 20 mol% of a monomer other than the above, and (B
) Formula R10(R20)nR3 (wherein, R1 has 1 to 1 carbon atoms
R2 is an alkylene group having 2 to 4 carbon atoms, R3 is hydrogen, an alkyl group having 1 to 4 carbon atoms, or an acetyl group, and n is an integer of 1 to 6). A water-swellable adhesive consisting of a hydrophilic compound can be used.
このような粘着剤が塗布されてなる粘着シート1は、ウ
ェハAの裏面を研摩する際には、ウェハに精製水が吹き
付けられた場合、含水後、膨潤平衡に達して、パターン
部分までの浸水を防ぐ効果により、ウェハ表面と粘着シ
ートとの間にウェハ研摩屑が入り込むことはなくウェハ
表面に形成されたパターンを十分保護しうる。When polishing the back surface of the wafer A, the adhesive sheet 1 coated with such an adhesive reaches a swelling equilibrium after absorbing water when purified water is sprayed onto the wafer, causing water to seep into the pattern area. This prevents wafer polishing debris from entering between the wafer surface and the adhesive sheet, and the pattern formed on the wafer surface can be sufficiently protected.
次に本発明に係るウェハ貼着用粘着シート1の使用方法
について説明する。Next, a method of using the adhesive sheet for wafer attachment 1 according to the present invention will be explained.
本発明に係るウェハ貼着用粘着シート1の上面に剥離性
シート4が設けられている場合には、該シート4を除去
し、次いでこの粘着剤層3に、裏面に研摩処理をすべき
ウェハAを貼着する。この際粘着剤層3上に、第3図に
示すようにパターン5が形成されたウェハ表面が接する
ようにして貼着する。When a releasable sheet 4 is provided on the upper surface of the adhesive sheet 1 for attaching wafers according to the present invention, the sheet 4 is removed, and then the adhesive layer 3 is coated with a wafer A whose back surface is to be polished. Paste. At this time, the wafer surface on which the pattern 5 is formed is attached to the adhesive layer 3 so that it is in contact with the surface of the wafer, as shown in FIG.
このような状態で、ウェハ裏面6をグラインダー7など
によって研摩して、ウェハ裏面6に形成された酸化物皮
膜などを除去するとともに、ウェハAの厚みを所望の厚
さに調節する。この際精製水をウェハAに吹き付けるな
どしてウェハ研摩屑を洗い去るとともに、研摩時に発生
する熱を除去する。In this state, the wafer back surface 6 is polished by a grinder 7 or the like to remove the oxide film formed on the wafer back surface 6 and adjust the thickness of the wafer A to a desired thickness. At this time, purified water is sprayed onto the wafer A to wash away wafer polishing debris and remove heat generated during polishing.
次に研摩が終了した後に、ウェハAから粘着シート1を
剥離する。この際ウェハAのパターン5が形成された表
面に、水溶性粘着剤などが付着することもある。この付
着した粘着剤Bは、充分な水溶性を有しているため、こ
の付着した粘着剤は、精製水Cで簡単に洗い去ることが
できる。Next, after polishing is completed, the adhesive sheet 1 is peeled off from the wafer A. At this time, a water-soluble adhesive or the like may adhere to the surface of the wafer A on which the pattern 5 is formed. Since this adhered adhesive B has sufficient water solubility, this adhered adhesive can be easily washed away with purified water C.
このように本発明に係るウェハ貼着用粘着シート1では
、粘着剤として水膨潤性粘着剤が用いられているため、
たとえウェハ表面に粘着剤が付着しても、該粘着剤をト
リクレンなどの有機溶剤を用いずに精製水によって洗浄
することによって除去することができ、したがって、人
体に悪影響を与える危険性が全くない。しかも従来では
、粘着剤が付着したウェハ表面をトリクレンなどの有機
溶剤で洗浄した後精製水で洗浄するという2工程が必要
であったが、本発明では、粘着剤が付着したウェハ表面
を精製水で洗浄すればよいため、洗浄を1工程で行なう
ことができる。As described above, in the adhesive sheet 1 for attaching wafers according to the present invention, since a water-swellable adhesive is used as the adhesive,
Even if adhesive adheres to the wafer surface, it can be removed by cleaning it with purified water without using an organic solvent such as Triclean, and therefore there is no risk of adverse effects on the human body. . Moreover, in the past, two steps were required: cleaning the wafer surface with the adhesive with an organic solvent such as Triclean and then cleaning it with purified water, but with the present invention, the wafer surface with the adhesive attached is cleaned with purified water. The cleaning can be done in one step.
また本発明に係るウェハ貼着用粘着シート1は、ウェハ
A真面の研摩時には、ウェハAと充分な接着力を有して
貼着されているため、ウェハ表面と粘着シートとの間に
ウェハ研摩屑が入り込んでウェハ表面に形成されたパタ
ーンが破壊されることがない。Further, since the adhesive sheet 1 for attaching a wafer according to the present invention is attached to the wafer A with sufficient adhesive force when polishing the surface of the wafer A, there is a gap between the wafer surface and the adhesive sheet. The pattern formed on the wafer surface will not be destroyed due to debris entering.
及咀ムカユ
本発明に係るウェハ貼着用粘着シートは、表面にパター
ンが形成されたウェハの裏面を研摩処理する際にウェハ
表面に貼着されるシートであって、基材面上に、粘着剤
層として水膨潤性粘着剤が塗布されて形成されているた
め、ウェハ表面の研摩処理の終了後にウェハ表面から粘
着シートを剥離させた際にウェハ表面に粘着剤が付着し
ていても、トリクレンなどの有機溶剤を用いずに水によ
って洗浄することによって粘着剤を除去することができ
る。したがって人体に悪影響を与える危険性がなく、し
かもウェハ表面に付着した粘着剤を1工程によって除去
することができる。The adhesive sheet for attaching wafers according to the present invention is a sheet that is attached to the surface of a wafer when the back surface of the wafer having a pattern formed thereon is polished. Since it is formed by applying a water-swellable adhesive as a layer, even if the adhesive is attached to the wafer surface when the adhesive sheet is peeled off from the wafer surface after polishing the wafer surface, it will not be damaged by Triclean, etc. The adhesive can be removed by washing with water without using any organic solvent. Therefore, there is no risk of adversely affecting the human body, and the adhesive adhering to the wafer surface can be removed in one step.
大里透ユ
(i)アクリル酸エチルと酢酸ビニルとメタクリル酸と
の共重合体および(i)ポリエチレングリコールラウリ
ルエーテルからなり、水酸化カリウムの存在下で酢酸亜
鉛により架橋してなるアクリル系水膨潤性粘着剤を50
μm厚のポリエステルフィルム上に乾燥後の塗布量が4
0g/rrrになるように塗布し、J I 5Z−02
37による180”接着力が90g/25awnである
粘着シートを得た。Water-swellable acrylic water-swellable acrylic material consisting of Toyu Osato (i) a copolymer of ethyl acrylate, vinyl acetate, and methacrylic acid, and (i) polyethylene glycol lauryl ether, crosslinked with zinc acetate in the presence of potassium hydroxide. 50 adhesive
The coating amount after drying is 4 μm thick polyester film.
Apply to 0g/rrr, J I 5Z-02
A pressure-sensitive adhesive sheet having a 180" adhesive strength of 90 g/25 awn based on No. 37 was obtained.
この粘着シートの粘着剤面をパターン形成後のウェハ表
面に、荷重1眩の加圧ロールを用いて貼着した。この試
料をウェハ裏面が上となるようにグラインド装置に正確
に固定し、水圧30kg/aa水噴霧下で5分間研磨し
た。The adhesive surface of this adhesive sheet was adhered to the surface of the wafer after pattern formation using a pressure roll with a load of 1 dazzle. This sample was accurately fixed in a grinding device so that the back surface of the wafer was facing upward, and polished for 5 minutes under a water pressure of 30 kg/aa water spray.
その後、粘着テープを剥離し、洗浄を行ない乾燥してか
ら、ウェハ表面を電子顕微鏡にて観察した。Thereafter, the adhesive tape was peeled off, washed and dried, and the wafer surface was observed using an electron microscope.
結果を表1に示す。The results are shown in Table 1.
止致■1
溶剤型アクリル系粘着剤(n−ブチルアクリレートと酢
酸ビニルとアクリル酸との共重合体、(分子量30万>
、100重量部とイソシアネート硬化剤10重量部とか
らなる)を実施例1と同様にポリエステルフィルム上に
塗布し、同じく180°接着力が85g/25mmであ
る粘着シートを得た。Attachment ■1 Solvent-type acrylic adhesive (copolymer of n-butyl acrylate, vinyl acetate, and acrylic acid, (molecular weight 300,000>
, and 10 parts by weight of an isocyanate curing agent) was applied onto a polyester film in the same manner as in Example 1 to obtain a pressure-sensitive adhesive sheet having a 180° adhesive strength of 85 g/25 mm.
この粘着シートをウェハ表面に貼着し、同様の試験を行
なった。This adhesive sheet was attached to the surface of a wafer and a similar test was conducted.
結果を表1に示す。The results are shown in Table 1.
去−1 *電子顕微鏡 倍率 5000倍Leaving -1 *Electron microscope magnification 5000x
第1図および第2図は、本発明に係る粘着シートの断面
図であり、第3図および第4図は本発明に係る粘着シー
トを用いてウェハ裏面を研摩する際の説明図である。1 and 2 are cross-sectional views of the adhesive sheet according to the present invention, and FIGS. 3 and 4 are explanatory views when polishing the back surface of a wafer using the adhesive sheet according to the present invention.
Claims (1)
処理する際にウェハ表面に貼着される粘着シートであっ
て、基材面上に、粘着剤層として水膨潤性粘着剤が塗布
されていることを特徴とするウェハ貼着用粘着シート。(1) An adhesive sheet that is attached to the surface of a wafer when the back surface of the wafer with a pattern formed thereon is polished, and a water-swellable adhesive is applied as an adhesive layer on the base material surface. An adhesive sheet for attaching wafers.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI87000930A MY102454A (en) | 1986-07-09 | 1987-07-02 | Adhesive sheets for sticking wafers thereto |
KR1019870007148A KR910002826B1 (en) | 1986-07-09 | 1987-07-04 | Adhesive sheet for sticking afers |
DE87306075T DE3787680T2 (en) | 1986-07-09 | 1987-07-09 | Adhesive strips for sticking platelets. |
EP87306075A EP0252739B1 (en) | 1986-07-09 | 1987-07-09 | Adhesive sheets for sticking wafers thereto |
MYPI91001866A MY109333A (en) | 1986-07-09 | 1991-10-12 | Adhesive sheets for sticking wafers thereto |
SG23494A SG23494G (en) | 1986-07-09 | 1994-02-07 | Adhesive sheets for sticking wafers thereto. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61-161682 | 1986-07-09 | ||
JP16168286 | 1986-07-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63153814A true JPS63153814A (en) | 1988-06-27 |
JPH0577284B2 JPH0577284B2 (en) | 1993-10-26 |
Family
ID=15739841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62043744A Granted JPS63153814A (en) | 1986-07-09 | 1987-02-26 | Adhesive sheet for sticking wafer |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS63153814A (en) |
KR (1) | KR910002826B1 (en) |
MY (2) | MY102454A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1014452A1 (en) * | 1998-02-25 | 2000-06-28 | Seiko Epson Corporation | Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display |
US6139953A (en) * | 1996-03-15 | 2000-10-31 | Lintec Corporation | Adhesive tape, base material for adhesive tape and their manufacturing methods |
US6156423A (en) * | 1997-04-11 | 2000-12-05 | Lintec Corporation | Base material and adhesive tape using the same |
US6235387B1 (en) | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
JP2006508540A (en) * | 2002-11-29 | 2006-03-09 | フラウンホファー ゲゼルシャフト ツール フェルドルンク デル アンゲヴァントテン フォルシュンク エー ファウ | Wafer processing process and apparatus and wafer with intermediate and carrier layers |
JP2011134747A (en) * | 2009-12-22 | 2011-07-07 | Kyushu Institute Of Technology | Electronic component for wiring and method of manufacturing the same |
US9559073B2 (en) | 2011-03-22 | 2017-01-31 | Lintec Corporation | Base film and pressure-sensitive adhesive sheet provided therewith |
US10224230B2 (en) | 2014-10-23 | 2019-03-05 | Lintec Corporation | Surface protective sheet |
JP2019087682A (en) * | 2017-11-09 | 2019-06-06 | 古河電気工業株式会社 | Method for manufacturing semiconductor chip |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4574234B2 (en) | 2004-06-02 | 2010-11-04 | リンテック株式会社 | Adhesive sheet for semiconductor processing and method for manufacturing semiconductor chip |
JP5282113B2 (en) | 2011-03-22 | 2013-09-04 | リンテック株式会社 | Base film and pressure-sensitive adhesive sheet provided with the base film |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4923294A (en) * | 1972-04-26 | 1974-03-01 | ||
JPS5670077A (en) * | 1979-11-13 | 1981-06-11 | Nippon Synthetic Chem Ind Co Ltd:The | Water-soluble pressure-sensitive adhesive |
JPS59157162A (en) * | 1983-02-26 | 1984-09-06 | Dainippon Printing Co Ltd | Pressure-sensitive adhesive composition peelable easily with water |
JPS6143677A (en) * | 1984-08-07 | 1986-03-03 | Mitsui Toatsu Chem Inc | Film for ic processing |
-
1987
- 1987-02-26 JP JP62043744A patent/JPS63153814A/en active Granted
- 1987-07-02 MY MYPI87000930A patent/MY102454A/en unknown
- 1987-07-04 KR KR1019870007148A patent/KR910002826B1/en not_active IP Right Cessation
-
1991
- 1991-10-12 MY MYPI91001866A patent/MY109333A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4923294A (en) * | 1972-04-26 | 1974-03-01 | ||
JPS5670077A (en) * | 1979-11-13 | 1981-06-11 | Nippon Synthetic Chem Ind Co Ltd:The | Water-soluble pressure-sensitive adhesive |
JPS59157162A (en) * | 1983-02-26 | 1984-09-06 | Dainippon Printing Co Ltd | Pressure-sensitive adhesive composition peelable easily with water |
JPS6143677A (en) * | 1984-08-07 | 1986-03-03 | Mitsui Toatsu Chem Inc | Film for ic processing |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6139953A (en) * | 1996-03-15 | 2000-10-31 | Lintec Corporation | Adhesive tape, base material for adhesive tape and their manufacturing methods |
US6156423A (en) * | 1997-04-11 | 2000-12-05 | Lintec Corporation | Base material and adhesive tape using the same |
EP1014452A1 (en) * | 1998-02-25 | 2000-06-28 | Seiko Epson Corporation | Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display |
EP1014452A4 (en) * | 1998-02-25 | 2001-11-14 | Seiko Epson Corp | Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display |
US6700631B1 (en) | 1998-02-25 | 2004-03-02 | Seiko Epson Corporation | Method of separating thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display device |
US6885389B2 (en) | 1998-02-25 | 2005-04-26 | Seiko Epson Corporation | Method of separating thin film device, method of transferring thin film device, thin film device, active matrix substrate and liquid crystal display device |
US6235387B1 (en) | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
US6478918B2 (en) | 1998-03-30 | 2002-11-12 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
JP2006508540A (en) * | 2002-11-29 | 2006-03-09 | フラウンホファー ゲゼルシャフト ツール フェルドルンク デル アンゲヴァントテン フォルシュンク エー ファウ | Wafer processing process and apparatus and wafer with intermediate and carrier layers |
US8173522B2 (en) | 2002-11-29 | 2012-05-08 | Thin Materials Ag | Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer |
JP4936667B2 (en) * | 2002-11-29 | 2012-05-23 | フラウンホファー ゲゼルシャフト ツール フェルドルンク デル アンゲヴァントテン フォルシュンク エー ファウ | Wafer processing process and apparatus and wafer with intermediate and carrier layers |
JP2011134747A (en) * | 2009-12-22 | 2011-07-07 | Kyushu Institute Of Technology | Electronic component for wiring and method of manufacturing the same |
US8952261B2 (en) | 2009-12-22 | 2015-02-10 | Kyushu Institute Of Technology | Interconnect-use electronic component and method for producing same |
US9559073B2 (en) | 2011-03-22 | 2017-01-31 | Lintec Corporation | Base film and pressure-sensitive adhesive sheet provided therewith |
US10224230B2 (en) | 2014-10-23 | 2019-03-05 | Lintec Corporation | Surface protective sheet |
JP2019087682A (en) * | 2017-11-09 | 2019-06-06 | 古河電気工業株式会社 | Method for manufacturing semiconductor chip |
US10916441B2 (en) | 2017-11-09 | 2021-02-09 | Furukawa Electric Co., Ltd. | Method for producing semiconductor chips |
Also Published As
Publication number | Publication date |
---|---|
KR880002261A (en) | 1988-04-30 |
MY102454A (en) | 1992-06-30 |
MY109333A (en) | 1997-01-31 |
JPH0577284B2 (en) | 1993-10-26 |
KR910002826B1 (en) | 1991-05-06 |
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