JPS63137959U - - Google Patents
Info
- Publication number
- JPS63137959U JPS63137959U JP3074987U JP3074987U JPS63137959U JP S63137959 U JPS63137959 U JP S63137959U JP 3074987 U JP3074987 U JP 3074987U JP 3074987 U JP3074987 U JP 3074987U JP S63137959 U JPS63137959 U JP S63137959U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- type semiconductor
- photo sensor
- region
- intrinsic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
Description
第１図は本考案フオトセンサの一つの実施例を
示す断面図、第２図は上記実施例の真性半導体領
域内のポテンシヤル分布（実線で示す）を従来例
のそれ（破線で示す）と比較して示すポテンシヤ
ル分布図、第３図Ａ，Ｂはフオトセンサの各別の
従来例を示すもので、同図Ａは縦型のフオトセン
サを示し、同図Ｂは横型のフオトセンサを示し、
第４図は考案が解決しようとするところの横型フ
オトセンサの問題点を説明するためのポテンシヤ
ル分布図である。
符号の説明、１…絶縁基板、２…Ｐ型半導体領
域、３…Ｎ型半導体領域、４…真性半導体領域、
５…低濃度Ｎ型半導体領域。
FIG. 1 is a cross-sectional view showing one embodiment of the photo sensor of the present invention, and FIG. 2 is a comparison of the potential distribution (indicated by a solid line) in the intrinsic semiconductor region of the above embodiment with that of a conventional example (indicated by a broken line). The potential distribution diagrams shown in Figures 3A and 3B show different conventional examples of photo sensors, where Figure A shows a vertical type photo sensor, Figure B shows a horizontal type photo sensor,
FIG. 4 is a potential distribution diagram for explaining the problems of the horizontal photo sensor that the invention attempts to solve. Explanation of symbols: 1... Insulating substrate, 2... P-type semiconductor region, 3... N-type semiconductor region, 4... Intrinsic semiconductor region,
5...Low concentration N-type semiconductor region.
Claims (1)
域を離間して形成し、その２つの半導体領域間上
に真性半導体領域を形成したフオトセンサであつ
て、 上記真性半導体領域の光が入射される側と反対
側に低濃度のＮ型半導体領域を形成してなる ことを特徴とするフオトセンサ。[Claims for Utility Model Registration] A photo sensor in which a P-type semiconductor region and an N-type semiconductor region are formed separately on an insulating substrate, and an intrinsic semiconductor region is formed between the two semiconductor regions, the above-mentioned intrinsic semiconductor A photo sensor characterized in that a low concentration N-type semiconductor region is formed on a side of the region opposite to the side on which light is incident.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3074987U JPS63137959U (en) | 1987-03-03 | 1987-03-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3074987U JPS63137959U (en) | 1987-03-03 | 1987-03-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63137959U true JPS63137959U (en) | 1988-09-12 |
Family
ID=30835847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3074987U Pending JPS63137959U (en) | 1987-03-03 | 1987-03-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63137959U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012064949A (en) * | 2000-01-31 | 2012-03-29 | Semiconductor Energy Lab Co Ltd | Device |
-
1987
- 1987-03-03 JP JP3074987U patent/JPS63137959U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012064949A (en) * | 2000-01-31 | 2012-03-29 | Semiconductor Energy Lab Co Ltd | Device |
| US8456459B2 (en) | 2000-01-31 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |
| US8830217B2 (en) | 2000-01-31 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |