JPS63131008A - Optical alignment method - Google Patents
Optical alignment methodInfo
- Publication number
- JPS63131008A JPS63131008A JP61275385A JP27538586A JPS63131008A JP S63131008 A JPS63131008 A JP S63131008A JP 61275385 A JP61275385 A JP 61275385A JP 27538586 A JP27538586 A JP 27538586A JP S63131008 A JPS63131008 A JP S63131008A
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- Prior art keywords
- mask
- wafer
- alignment
- optical
- laser beam
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- 230000003287 optical effect Effects 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000001514 detection method Methods 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明は、マスク上の複数のアライメントマークを介し
てウェハー上の複数のアライメントマークをそれぞれレ
ーザ光で照射し、これによって得られた光をそれぞれの
光検出器で検出することによりウェハーとマスクの相対
位置合わせを行う光学的アライメント方法において、マ
スクおよびウェハーからの散乱光がこれと対応していな
い光検出器に入射することによる検出信号のＳ／Ｎ比の
低下を防止するために、上記それぞれのレーザ光を互い
に異なるタイミングで断続的に照射することにより、互
いに対応する光検出器のみで検出できるようにし、信頼
性の高い位置合わせを可能にしたものである。[Detailed Description of the Invention] [Summary] The present invention irradiates a plurality of alignment marks on a wafer with a laser beam through a plurality of alignment marks on a mask, and uses the light obtained thereby to irradiate each of the alignment marks with a laser beam. In an optical alignment method that performs relative positioning of a wafer and a mask by detecting with a detector, the S/N of the detection signal is caused by the scattered light from the mask and wafer entering a non-corresponding photodetector. In order to prevent the ratio from decreasing, each of the above laser beams is intermittently irradiated at different timings, making it possible to detect each other only with the corresponding photodetectors, making highly reliable alignment possible. It is something.
本発明は、例えばＸ線露光等によるプロキシミティバタ
ン転写等を行う際にマスクとウェハーの相対位置を合わ
せるための光学的アライメント方法に関する。The present invention relates to an optical alignment method for aligning the relative positions of a mask and a wafer when performing, for example, proximity transfer using X-ray exposure or the like.
第４図および第５図に従来の光学的アライメント方法を
示す、この方法は、まず予めウェハー１上の周辺部の複
数箇所（第４図では３箇所）に、それぞれ直線状に配列
された回折格子１１〜１３を形成しておくと共に、マス
クｚ上にも上記回折格子１１−１３と対応する箇所にそ
れぞれリニアフレネルゾーンプレート２１〜２３を形成
しておく。そして、同一波長の３本のレーザ光ｌ、〜ｌ
。A conventional optical alignment method is shown in FIGS. 4 and 5. In this method, first, linearly arranged diffraction patterns are placed in advance at multiple locations (three locations in FIG. 4) on the periphery of the wafer 1. In addition to forming the gratings 11-13, linear Fresnel zone plates 21-23 are also formed on the mask z at locations corresponding to the diffraction gratings 11-13, respectively. Then, three laser beams l, ~l with the same wavelength
.
を同時にリニアフレネルゾーンプレート２１〜２３を介
してウェハー１上に直線状に集光させる。At the same time, the light is focused linearly onto the wafer 1 via the linear Fresnel zone plates 21 to 23.
すると、ウェハー１上には各リニアフレネルゾーンプレ
ート２１〜２３毎に輝ｖＡＬができるので（第５図）、
この輝線りが回折格子１１〜１３を通るようにウェハー
ｌもしくはマスク２を適宜移動させる。続いて、これに
よって得られる回折光１、〜１．を光検出器（不図示）
で検出することにより、ウェハーｌとマスク２のＸ、Ｙ
、θ方向の相対位置変位を知る。そこで、このようにし
て得られる上記相対位置変位が最小となるようにウェハ
ー１とマスク２の相対位置を動かすことにより、位置合
わせが完了する。Then, a brightness vAL is formed on each of the linear Fresnel zone plates 21 to 23 on the wafer 1 (Fig. 5).
The wafer 1 or the mask 2 is appropriately moved so that the bright lines pass through the diffraction gratings 11 to 13. Subsequently, the diffracted lights 1, -1. A photodetector (not shown)
By detecting the X, Y of wafer l and mask 2
, the relative positional displacement in the θ direction is known. Therefore, alignment is completed by moving the relative positions of the wafer 1 and the mask 2 so that the above-mentioned relative positional displacement obtained in this manner is minimized.
上記従来の光学的アライメント方法では、複数のアライ
メントマーク（回折格子１１〜１３、リニアフレネルゾ
ーンプレート２１〜２３）に対してレーザ光！、〜ｌ、
がすべて同時に照射される。In the conventional optical alignment method described above, a laser beam is applied to a plurality of alignment marks (diffraction gratings 11 to 13, linear Fresnel zone plates 21 to 23). ,~l,
are all irradiated at the same time.
そのため、ウェハー１およびマスク２からの散乱光が、
これと対応する光検出器以外の光検出器にもノイズ光と
して、正規の光と共に入射してしまう。しかも、上記レ
ーザ光１．−１．がすべで同一波長であるために、上記
ノイズ光を正規の光と区別して除去することは困難であ
る。従って、上記ノイズ光の影響で、光検出器の検出信
号のＳ／Ｎ比が著しく低下してしまい、正確な位置合わ
せができないという問題が生じていた。Therefore, the scattered light from the wafer 1 and the mask 2 is
This light also enters photodetectors other than the corresponding photodetector as noise light together with regular light. Moreover, the laser beam 1. -1. Since they all have the same wavelength, it is difficult to distinguish the noise light from normal light and remove it. Therefore, due to the influence of the noise light, the S/N ratio of the detection signal of the photodetector is significantly lowered, resulting in a problem that accurate positioning cannot be performed.
本発明は、上記問題点に鑑み、光検出器へのノイズ光を
なくしてＳ／Ｎ比を増加させ、信頼性の高い位置合わせ
を可能にする光学的アライメント方法を提供することを
目的とする。In view of the above problems, an object of the present invention is to provide an optical alignment method that eliminates noise light to a photodetector, increases the S/N ratio, and enables highly reliable alignment. .
〔問題点を解決するための手段〕
本発明の光学的アライメント方法は、ウェハー及びマス
ク上の複数のアライメントマーク上へのレーザ光の照射
を、それぞれ互いに異なるタイミングで断続的に行うよ
うにしたことを特徴とする・〔作 用〕
各了うンメントマークに対してレーザ光を上記のように
それぞれ互いに異なるタイミングで断続的に照射すれば
、それぞれの光検出器への入射光も上記タイミングで断
続的に得られる。よって、任意の１つのアライメントマ
ーク上からの光がそれと対応する光検出器で検出されて
いる間は、他のアライメントマーク上にレーザ光が照射
されることがないので、そこからの散乱光がノイズ光と
して上記光検出器で検出されるようなことはない。[Means for solving the problem] The optical alignment method of the present invention is such that laser light is intermittently irradiated onto a plurality of alignment marks on a wafer and a mask at mutually different timings. Features: [Function] If laser light is intermittently irradiated to each of the recognition marks at different timings as described above, the incident light to each photodetector will also be intermittently at the above timings. can be obtained. Therefore, while the light from above any one alignment mark is being detected by the corresponding photodetector, the laser light will not be irradiated onto other alignment marks, so the scattered light from there will be The light will not be detected by the photodetector as noise light.
従って、各光検出器における検出信号のＳ／Ｎ比が大き
く、位置合わせの信頼性は著しく高まる。Therefore, the S/N ratio of the detection signal in each photodetector is large, and the reliability of alignment is significantly increased.
以下、本発明の実施例について、図面を参照しながら説
明する。Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明の一実施例を適用した光学系およびそ
の制御系の構成図である。FIG. 1 is a configuration diagram of an optical system and its control system to which an embodiment of the present invention is applied.
本実施例では、まず第４図および第５図に示した従来の
方法と同様に、予めウェハー１上の複数箇所（第１図で
は３箇所）にそれぞれ回折格子１１〜１３を形成してお
くと共に、マスク２上にも上記回折格子１１〜１３と対
応する箇所にそれぞれリニアフレネルゾーンプレート２
１〜２３を形成しておく。In this embodiment, first, diffraction gratings 11 to 13 are formed in advance at multiple locations (three locations in FIG. 1) on the wafer 1, as in the conventional method shown in FIGS. 4 and 5. At the same time, linear Fresnel zone plates 2 are also provided on the mask 2 at locations corresponding to the diffraction gratings 11 to 13, respectively.
Form numbers 1 to 23 in advance.
そして、例えば半導体レーザ等の１個のレーザ光源３１
からレーザ光を出力し、このレーザ光を光ファイバｆ０
を介して３路光スイツチ３２に送る。この３路光スイツ
チ３２は、１つの入力光を３つの光路ｇ＋ 、ｇｚ 、
ｇｓに順次切換えて出力可能な光スイッチであり、その
切換えのタイミングは制御回路３３によって制御されて
いる。For example, one laser light source 31 such as a semiconductor laser is provided.
outputs laser light from the optical fiber f0.
The signal is sent to the 3-way optical switch 32 via the 3-way optical switch 32. This three-way optical switch 32 routes one input light to three optical paths g+, gz,
It is an optical switch that can sequentially switch to and output gs, and the switching timing is controlled by the control circuit 33.
上記制御回路３３では、まず発振器３３１で出力された
クロック信号に基づき、パルスドライバ３３２が、チャ
ネルセレクタ３３３を駆動する。In the control circuit 33, first, the pulse driver 332 drives the channel selector 333 based on the clock signal output from the oscillator 331.
このチャネルセレクタ３３３は、コントローラ３３４か
ら出力された制御信号に従って、３路光スイツチ３２の
電極３２ａ、３２ｂに電圧を印加する。上記制御信号は
、電極３２ａ、３２ｂを例えば第２図（ａ）に示すよう
に、オン（電圧印加時）、オフ（電圧非印加時）させる
ような信号である。This channel selector 333 applies voltage to the electrodes 32a and 32b of the three-way optical switch 32 in accordance with the control signal output from the controller 334. The control signal is a signal that turns the electrodes 32a and 32b on (when voltage is applied) and off (when no voltage is applied), as shown in FIG. 2(a), for example.
このように電極３２ａ、３２ｂをオン、オフさせること
により、３路光スイツチ３２へ入射したレーザ光を３つ
の光路ｇｒ 、ｇｚ 、ｇｚに順次切換えて出力させる
ことができ、よってそれぞれの光路からは断続的に光が
出力することになる。この切換えのタイミングを、光の
出力時をオンとして第２図（ｂ）に示す。すなわち、電
極３２ａ、３２ｂがいずれもオンしたときに光路ｇ＋が
オンし、次に電極３２ａのみをオンしたときに光路ｇ２
がオンし、続いて電極３２ａがオフしたときに光路ｇ、
がオンする。By turning the electrodes 32a and 32b on and off in this manner, the laser beam incident on the three-way optical switch 32 can be sequentially switched to three optical paths gr, gz, and gz and output, so that the laser beam is output from each optical path. Light will be output intermittently. The timing of this switching is shown in FIG. 2(b) with the light output turned on. That is, when both electrodes 32a and 32b are turned on, optical path g+ is turned on, and when only electrode 32a is turned on, optical path g2 is turned on.
is turned on and then when the electrode 32a is turned off, the optical path g,
turns on.
次に、上記３路光スイツチ３２の光路ｇ＋、ｇｚ 、ｇ
ｚから、上記のように互いに異なるタイミングで順次出
力されたレーザ光は、それぞれ光ファイバｆ、、ｆ、、
ｆ、を介してファイバコリメータ４１．４２．４３に導
かれ、ここで平行光線であるレーザ光１２１．１２□、
１２３に変換される。Next, the optical paths g+, gz, g of the three-way optical switch 32 are
The laser beams sequentially output from z at different timings as described above are connected to optical fibers f, , f, , respectively.
f, to the fiber collimator 41.42.43, where the parallel light beam 121.12□,
123.
これらのレーザ光も、上記３路光スイツチ３２の切換え
タイミングに基づき、第２図（ｂ）に示した光路ｇ３、
ｇｚ、ｇ３のオン、オフと同じタイミングで断続的に得
られる。続いて上記レーザ光１２い１２□、１２３をそ
れぞれミラー５１．５２．５３でマスク２の方向へ、反
射させ、マスク２上のリニアフレネルゾーンプレート２
１．２２．２３を介してウェハー１上の回折格子１１．
１２．１３上に上記タイミングでそれぞれ別々に照射す
る。すると、第５図に示したと同様にして回折格子１１
．１２．１３上に直線状の輝線が順次でき、そこからの
回折光１３い ３７．１３３がそれぞれ別々のりイミン
グで得られる。These laser beams also follow the optical paths g3 and 3 shown in FIG. 2(b) based on the switching timing of the three-path optical switch 32.
It is obtained intermittently at the same timing as gz and g3 are turned on and off. Next, the laser beams 12, 12□, and 123 are reflected by mirrors 51, 52, and 53, respectively, toward the mask 2, and the linear Fresnel zone plate 2 on the mask 2 is reflected.
1.22.23 on the wafer 1 through the grating 11.
12.13 are irradiated separately at the above timing. Then, the diffraction grating 11 is formed in the same manner as shown in FIG.
．． Linear emission lines are formed one after another on 12.13, and diffracted lights 13 and 37.133 from these lines are obtained at different timings.
そこで、上記回折光β、１、Ｉｌ’ｒｚ、１３’３をミ
ラー６１．６２．６３で反射させた後、それぞれ対応す
る光検出器（例えばＰＩＮフォトダイオード等）７１．
７２．７３で検出する。この時、いずれか１つの回折光
がこれと対応する光検出器で検出されている間は、それ
以外の箇所にレーザ光が照射されることがないので、そ
こからの散乱光がノイズ光として上記光検出器で検出さ
れるようなことがない。従って、光検出器７１．７２．
７３によって得られるいずれの検出信号も、第２図（Ｃ
）に示すように、上記のようなノイズ光による影響を受
けることなく、極めて大きなＳ／Ｎ比を持つことができ
る。Therefore, after reflecting the diffracted lights β, 1, Il'rz, 13'3 by the mirrors 61, 62, 63, the corresponding photodetectors (for example, PIN photodiodes, etc.) 71.
Detected at 72.73. At this time, while any one of the diffracted lights is being detected by the corresponding photodetector, the laser light will not be irradiated to any other location, so the scattered light from there will be used as noise light. Nothing will be detected by the photodetector. Therefore, the photodetectors 71.72.
Any detection signal obtained by 73 is shown in Fig. 2 (C
), it is possible to have an extremely high S/N ratio without being affected by noise light as described above.
このようにして非常にＳ／Ｎ比の大きな検出信号が得ら
れるので、これらの検出信号からウェハー１とマスク２
の極めて正確な相対位置変位を知ることができる。そこ
で、このようにして得られる上記相対位置変位が最小と
なるようにウェハー１とマスク２の相対位置を動かすこ
とにより、非常に信頼性の高い位置合わせが可能になる
。In this way, detection signals with a very large S/N ratio can be obtained, so wafer 1 and mask 2 can be detected from these detection signals.
It is possible to know the extremely accurate relative position displacement of Therefore, by moving the relative positions of the wafer 1 and the mask 2 so that the above-mentioned relative positional displacement obtained in this manner is minimized, extremely reliable alignment becomes possible.
なお、本実施例では一体的な３路光スイツチ３２を用い
たが、この代りに２つの２路光スイツチを組み合わせて
用いるようにしてよもい。In this embodiment, an integrated three-way optical switch 32 is used, but a combination of two two-way optical switches may be used instead.
次に、本発明の他の実施例を適用した光学系およびその
制御系の構成を第３図に示す。本実施例は、第１図にお
ける１個のレーザ光源３１．３路光スイツチ３２および
制御回路３３等の代わりに、３個のレーザ光源（例えば
半導体レーザ等）８１．８２．８３とレーザ駆動制御回
路８０を用いたものである。Next, FIG. 3 shows the configuration of an optical system and its control system to which another embodiment of the present invention is applied. In this embodiment, instead of one laser light source 31, three-way light switch 32, control circuit 33, etc. in FIG. The circuit 80 is used.
上記レーザ駆動制御回路８０は、３つのレーザ光源８１
．８２．８３からそれぞれレーザ光ｅ４い１４！、１４
．をパルス的に出力させると共に、これらのレーザ光Ｊ
４１．１４□、１４３の発光時間が互いに重ならず、そ
れぞれ異なるタイミング（例えば第２図（ｂｌに示した
ようなタイミング）で順次出力されるように制御する。The laser drive control circuit 80 includes three laser light sources 81
．． Laser beam e4 and 14 from 82.83 respectively! , 14
．． These laser beams J
The light emitting times of 41.14□ and 143 are controlled so that they do not overlap with each other and are sequentially output at different timings (for example, the timings shown in FIG. 2 (bl)).
この後は、上記実施例と同様に、レーザ光１４い１４□
、”４１をマスク２上のリニアフレネルゾーンプレート
２１．２２．２３を介してウェハー１上の回折格子１１
．１２．１３上に上記タイミングでそれぞれ別々に照射
し、その回折光！、１１５２、ｆｓ３をそれぞれ対応す
る光検出器７１．７２．７３で検出する。すると、この
時に光検出器７１．７２．７３で得られる検出信号は、
上記実施例と同様な理由により極めて大きなＳ／Ｎ比で
持つことができるので、その後にこの検出信号に基づい
て行われるウェハー１とマスク２の相対位置合わせは、
非常に信頼性の高いものとなる。After this, similarly to the above embodiment, the laser beams 14 and 14□
, 41 to the diffraction grating 11 on the wafer 1 via the linear Fresnel zone plate 21, 22, 23 on the mask 2.
．． 12.13 The diffracted light is irradiated separately at the above timing! , 1152, and fs3 are detected by corresponding photodetectors 71, 72, and 73, respectively. Then, the detection signals obtained by the photodetectors 71, 72, and 73 at this time are
For the same reason as in the above embodiment, an extremely high S/N ratio can be achieved, so that the relative positioning of the wafer 1 and the mask 2, which is subsequently performed based on this detection signal, is
It becomes extremely reliable.
なお、上記各実施例においては、ウエノＸ−１とマスク
２上にそれぞれ回折格子１１〜１３とリニアフレネルゾ
ーンプレート２１〜２３を設け、これらをアライメント
マークとして用いたが、これらは望ましい一例であって
、本発明においては、ウェハー１とマスク２との相対位
置変位を光学的に検出でき得るもであればどのようなア
ライメントマークを用いてもよい。In each of the above embodiments, the diffraction gratings 11 to 13 and the linear Fresnel zone plates 21 to 23 were provided on the Ueno X-1 and the mask 2, respectively, and these were used as alignment marks, but these are only desirable examples. In the present invention, any alignment mark may be used as long as the relative positional displacement between the wafer 1 and the mask 2 can be detected optically.
また、上記各実施例ではアライメントマーク（回折格子
１１〜１３、リニアフレネルゾーンプレート２１〜２３
）をそれぞれ互いに対応して３箇所に設けたが、４箇所
以上に設けるようにしてもよい。この場合、設けたアラ
イメントマークの数に応じて、照射されるレーザ光の本
数も増やすようにする。In addition, in each of the above embodiments, alignment marks (diffraction gratings 11 to 13, linear Fresnel zone plates 21 to 23)
) were provided at three locations corresponding to each other, but they may be provided at four or more locations. In this case, the number of laser beams to be irradiated is increased according to the number of alignment marks provided.
本発明の光学的アライメント方法によれば、マスクおよ
びウェハーからの散乱光がこれと対応していない光検出
器にノイズ光として入射するのをな（すことができ、こ
れにより検出信号のＳ／Ｎ比を著しく増大させることが
できたので、極めて信頼性の高い位置合わせを実現でき
るようになった。According to the optical alignment method of the present invention, it is possible to prevent scattered light from the mask and wafer from entering a photodetector that does not correspond to it as noise light. Since we were able to significantly increase the N ratio, we were able to achieve extremely reliable alignment.
第１図は本発明の一実施例を適用した光学系およびその
制御系の構成図、
第２図（ａｌ〜（Ｃ）は同実施例におけるタイミングチ
ャート、
第３図は本発明の他の実施例を適用した光学系およびそ
の制御系の構成図、
第４図は従来の方法を適用した光学系の構成図、第５図
は第４図の部分拡大図である。
１°１０ウエハー、
２・・・マスク、
１１．１２．１３・・・回折格子、
２１、２２、２３
・・・リニアフレネルゾーンプレート、３１・・・レー
ザ光源、
３２・・・３路光スイツチ、
３３・・・制御回路、
７１．７２．７３・・・光検出器、
８０・・・レーザ駆動制御回路、
８１．８２．８３・・・レーザ光源。Fig. 1 is a configuration diagram of an optical system and its control system to which an embodiment of the present invention is applied; Fig. 2 (al to (C) are timing charts in the same embodiment; Fig. 3 is another embodiment of the present invention) Fig. 4 is a block diagram of an optical system to which the conventional method is applied, and Fig. 5 is a partially enlarged view of Fig. 4. 1°10 wafer, 2 ... Mask, 11.12.13 ... Diffraction grating, 21, 22, 23 ... Linear Fresnel zone plate, 31 ... Laser light source, 32 ... Three-way optical switch, 33 ... Control Circuit, 71.72.73... Photodetector, 80... Laser drive control circuit, 81.82.83... Laser light source.
Claims (1)
応する複数箇所にそれぞれアライメントマーク（１１〜
１３、２１〜２３）を設け、前記マスク上の複数のアラ
イメントマーク（２１〜２３）を介してこれと対応する
前記ウェハー上の複数のアライメントマーク（１１〜１
３）上にそれぞれレーザ光を照射し、該レーザ光の照射
によって得られる光をそれぞれの光検出器（７１〜７３
）で検出して、その検出結果に基づき前記ウェハーと前
記マスクとの相対位置合わせを行なう光学的アライメン
ト方法において、 前記複数のアライメントマーク上への前記レーザ光の照
射をそれぞれ互いに異なるタイミングで断続的に行うこ
とを特徴とする光学的アライメント方法。 ２）前記レーザ光は、１つのレーザ光源（３１）から出
力されたレーザ光を、前記タイミングに基づいて複数の
光路を順次切変える光スイッチ（３２）を介すことによ
って得ることを特徴とする特許請求の範囲第１項記載の
光学的アライメント方法。 ３）前記レーザ光は、前記マスク上のアライメントマー
クの数と同数のレーザ光源（８１〜８３）を前記タイミ
ングに基づいて順次発光させることによって得ることを
特徴とする特許請求の範囲第１項記載の光学的アライメ
ント方法。 ４）前記レーザ光源は半導体レーザであることを特徴と
する特許請求の範囲第２項または第３項記載の光学的ア
ライメント方法。 ５）前記ウェハー上および前記マスク上のアライメント
マークはどちらも３箇所以上に設けられていることを特
徴とする特許請求の範囲第１項乃至第４項のいずれか１
つに記載の光学的アライメント方法。 ６）前記ウェハー上のアライメントマークは回折格子（
１１〜１３）であることを特徴とする特許請求の範囲第
１項乃至第５項のいずれか１つに記載の光学的アライメ
ント方法。７）前記レーザ光の照射によって得られる前
記光は回折光であることを特徴とする特許請求の範囲第
６項記載の光学的アライメント方法。 ８）前記マスク上のアライメントマークはリニアフレネ
ルゾーンプレート（２１〜２３）であることを特徴とす
る特許請求の範囲第１項乃至第７項のいずれか１つに記
載の光学的アライメント方法。 ９）前記光検出器はＰＩＮフォトダイオードであること
を特徴とする特許請求の範囲第１項乃至第８項のいずれ
か１つに記載の光学的アライメント方法。[Claims] 1) Alignment marks (11-
13, 21-23), and a plurality of alignment marks (11-1) on the wafer corresponding to the plurality of alignment marks (21-23) on the mask are provided.
3) A laser beam is irradiated onto each of the above, and the light obtained by the irradiation of the laser beam is transmitted to each of the photodetectors (71 to 73).
) and performs relative alignment between the wafer and the mask based on the detection result, wherein the laser light is irradiated onto the plurality of alignment marks intermittently at different timings. An optical alignment method characterized by performing. 2) The laser light is obtained by passing the laser light output from one laser light source (31) through an optical switch (32) that sequentially switches a plurality of optical paths based on the timing. An optical alignment method according to claim 1. 3) The laser beam is obtained by sequentially causing the same number of laser light sources (81 to 83) as the number of alignment marks on the mask to emit light based on the timing, according to claim 1. optical alignment method. 4) The optical alignment method according to claim 2 or 3, wherein the laser light source is a semiconductor laser. 5) Any one of claims 1 to 4, wherein alignment marks on the wafer and on the mask are both provided at three or more locations.
Optical alignment method described in. 6) The alignment mark on the wafer is a diffraction grating (
11 to 13). The optical alignment method according to any one of claims 1 to 5. 7) The optical alignment method according to claim 6, wherein the light obtained by irradiation with the laser beam is diffracted light. 8) The optical alignment method according to any one of claims 1 to 7, wherein the alignment mark on the mask is a linear Fresnel zone plate (21-23). 9) The optical alignment method according to any one of claims 1 to 8, wherein the photodetector is a PIN photodiode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61275385A JPS63131008A (en) | 1986-11-20 | 1986-11-20 | Optical alignment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61275385A JPS63131008A (en) | 1986-11-20 | 1986-11-20 | Optical alignment method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63131008A true JPS63131008A (en) | 1988-06-03 |
Family
ID=17554753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61275385A Pending JPS63131008A (en) | 1986-11-20 | 1986-11-20 | Optical alignment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63131008A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02167405A (en) * | 1988-09-09 | 1990-06-27 | Canon Inc | Position detector |
| JPH0348703A (en) * | 1989-07-17 | 1991-03-01 | Canon Inc | Position detector |
| WO2009084203A1 (en) * | 2007-12-28 | 2009-07-09 | Nikon Corporation | Moving body driving method and apparatus, exposure method and apparatus, pattern forming method and apparatus, and device manufacturing method |
| US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59134830A (en) * | 1982-12-30 | 1984-08-02 | トムソン−セ−エスエフ | Method and apparatus for optically arraying pattern on two close-up plane |
| JPS60187804A (en) * | 1984-03-08 | 1985-09-25 | Canon Inc | Detecting apparatus of position |
-
1986
- 1986-11-20 JP JP61275385A patent/JPS63131008A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59134830A (en) * | 1982-12-30 | 1984-08-02 | トムソン−セ−エスエフ | Method and apparatus for optically arraying pattern on two close-up plane |
| JPS60187804A (en) * | 1984-03-08 | 1985-09-25 | Canon Inc | Detecting apparatus of position |
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| JPH02167405A (en) * | 1988-09-09 | 1990-06-27 | Canon Inc | Position detector |
| JPH0348703A (en) * | 1989-07-17 | 1991-03-01 | Canon Inc | Position detector |
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