JPS63103815A - Apparatus for continuous production of sio fine powder or such - Google Patents

Apparatus for continuous production of sio fine powder or such

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Publication number
JPS63103815A
JPS63103815A JP24559986A JP24559986A JPS63103815A JP S63103815 A JPS63103815 A JP S63103815A JP 24559986 A JP24559986 A JP 24559986A JP 24559986 A JP24559986 A JP 24559986A JP S63103815 A JPS63103815 A JP S63103815A
Authority
JP
Japan
Prior art keywords
sio
powder
vapor
raw material
muffle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24559986A
Other languages
Japanese (ja)
Inventor
Toshihiko Funabashi
敏彦 船橋
Ryoji Uchimura
良治 内村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP24559986A priority Critical patent/JPS63103815A/en
Publication of JPS63103815A publication Critical patent/JPS63103815A/en
Pending legal-status Critical Current

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  • Silicon Compounds (AREA)

Abstract

PURPOSE:To obtain SiO powder in high efficiency, by using a continuous process maintained to a reduced pressure from the charge to the delivery in the heat- treatment of an SiO2 oxide powder to generate SiO vapor and the recovery of condensed SiO powder. CONSTITUTION:A raw material mixture 8 composed mainly of an SiO2 oxide powder and containing a carbon-containing component or metallic silicon powder is continuously charged through hoppers 4a, 4b into a muffle 2. The mixture is heated in the muffle 2 with a heater 10 in a non-oxidizing atmosphere having reduced pressure to effect the reaction of SiO2 with carbon or silicon in the raw material mixture and generate SiO vapor. At the same time, a non-oxidizing gas is introduced into the muffle 2 through gas inlet ports 17, 18 and the generated SiO vapor is condensed in a gaseous phase. At the same time, the condensed product is transferred to SiO powder recovery chambers 11, 12 via transfer pipes 8, 9 heated with the heater 10 and is recovered in the form of SiO powder.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、SiO微粉末等の連続製造に関するもので、
主として0.1μm以下の微細アモルファス状の810
粉末を連続的に製造し、併せて副次的にZrO2粉末な
どを得るための装置に関するものである。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to the continuous production of SiO fine powder, etc.
Mainly fine amorphous 810 of 0.1 μm or less
This invention relates to an apparatus for continuously producing powder and also obtaining ZrO2 powder etc. as a secondary product.

かかるSin粉末は、Si3N4. SiCといった近
年非常に注目されているファインセラミックス粉末の原
料となり得るものであり、とりわけ本発明の装置で得ら
れるようなSiO粉末は0.1 μm以下という微細な
もので、極めて活性に富み、セラミックス合成用原料と
して工業的利用価値が非常に高い。
Such a Sin powder is Si3N4. It can be used as a raw material for fine ceramic powder such as SiC, which has been attracting a lot of attention in recent years.In particular, the SiO powder obtained with the device of the present invention is as fine as 0.1 μm or less, is extremely active, and is useful for ceramics. It has very high industrial value as a raw material for synthesis.

(従来の技術) SiO微粉末等の製造に関する従来技術として、例えば
特公昭59−50601号公報に開示されているような
、いわゆるSiO□と炭素、あるいは、5i02と金属
Siの混合物を1500℃以上の高温度の減圧下で反応
させてSiO蒸気を発生させ、該slo蒸気を還元窒化
また、還元炭化もしくは減圧した酸素雲囲気内に断熱膨
張で噴射させることにより、粒径0.1μm以下のアモ
ルファス状SiO微粉末を得る方法およびそのための装
置が知られている。
(Prior art) As a conventional technology related to the production of SiO fine powder, etc., a mixture of so-called SiO□ and carbon, or 5i02 and metal Si is heated at 1500°C or higher, as disclosed in Japanese Patent Publication No. 59-50601. By reacting at high temperature and under reduced pressure to generate SiO vapor, and by reducing and carbonizing the slo vapor or injecting it into a reduced pressure oxygen cloud atmosphere by adiabatic expansion, amorphous particles with a particle size of 0.1 μm or less are produced. BACKGROUND ART A method for obtaining fine SiO powder and an apparatus therefor are known.

(発明が解決しようとする問題点) 上述したSiO微粉末等の製造に関する従来技術は、少
量生産の場合であれば良いが、多量に製造しようとする
と、SiO蒸気を搬送するための搬送用パイプが凝縮し
たSiOによって閉塞したりする。
(Problems to be Solved by the Invention) The conventional technology related to the production of SiO fine powder, etc. described above is good for small-quantity production, but when producing large quantities, it is difficult to use a conveying pipe for conveying SiO vapor. may be blocked by condensed SiO.

しかも、断熱膨張で噴射させるためのノズルがSiO蒸
気によって侵食されてノズルとしての役割を果たさなく
なったり、反応物がノズルの部分に蓄積して閉塞してし
まう場合もあり、この技術は真の意味で工業化・量産化
に適した製造装置を提供するものとは云えない。
Moreover, the nozzle for ejecting through adiabatic expansion may be eroded by the SiO vapor and no longer function as a nozzle, or the reactant may accumulate in the nozzle and become clogged, so this technology has no real meaning. However, it cannot be said that it provides manufacturing equipment suitable for industrialization and mass production.

そこで、本発明者らは、SiO微粉末等を製造する技術
に関しての上記従来技術のもつ問題点が克服できると共
に0.1 μm以下という極めて微細なSiO微粉末の
量産化に適した製造技術を、先に特願昭60−1656
76号として提案した。この発明の要旨を紹介すると、 第1に、SiO□系原料と炭素含有物および/または金
属珪素粉末との混合物を、0.1気圧以下に減圧した非
酸化性雰囲気中の1300〜2000℃の温度域で熱処
理し、SiOの蒸気を発生させ、該SiO蒸気を前記非
酸化性ガスにより凝縮させかつ搬送し、SiO粉末とし
て回収することにより、0.1 μm以下のSIO微粉
末を製造すること、 第2に、SiO□系原料と炭素含有物および/または金
属珪素粉末との混合物を、0.1気圧以下に減圧した非
酸化性雰囲気中の1300〜2000℃の温度域で熱処
理し、SiOの蒸気を発生させ、該SiO蒸気を前記非
酸化性ガスにより凝縮させかつ搬送し、SiO粉末とし
て回収する一方で、減圧熱処理された原料の残部をも別
に回収すること、 そして第3に、上記各製造方法に適した製造装置を提供
する点にあった。
Therefore, the present inventors have developed a manufacturing technology that can overcome the problems of the above-mentioned conventional techniques for manufacturing SiO fine powder, etc., and is suitable for mass production of extremely fine SiO fine powder of 0.1 μm or less. , previously filed a patent application in 1986-1656.
I proposed it as No. 76. To introduce the gist of this invention, firstly, a mixture of SiO□-based raw materials and carbon-containing materials and/or metal silicon powder is heated at 1300 to 2000°C in a non-oxidizing atmosphere with a reduced pressure of 0.1 atmosphere or less. Producing SIO fine powder of 0.1 μm or less by performing heat treatment in a temperature range to generate SiO vapor, condensing the SiO vapor with the non-oxidizing gas, transporting it, and recovering it as SiO powder. , Second, a mixture of SiO□-based raw materials and carbon-containing materials and/or metal silicon powder is heat-treated in a temperature range of 1300 to 2000°C in a non-oxidizing atmosphere reduced to 0.1 atmosphere or less to form SiO generating steam, condensing the SiO vapor with the non-oxidizing gas, transporting it, and recovering it as SiO powder, while also separately recovering the remainder of the raw material subjected to the vacuum heat treatment; and thirdly, the above-mentioned The aim was to provide manufacturing equipment suitable for each manufacturing method.

本発明の目的はかかる本発明者らの提案にかかる特願昭
60−165676号で提案したSiO粉末等の製造装
置に関して、装入から排出までが減圧系で統一された連
続化プロセスを提案することにより、SiO微粉末のみ
ならずジルコニア粉末を連続的かつ効率的に製造し得る
という要請に応えられる装置を提供することにある。
The purpose of the present invention is to propose a continuous process in which processes from charging to discharge are unified using a reduced pressure system regarding the apparatus for producing SiO powder, etc. proposed in Japanese Patent Application No. 165676/1987 proposed by the present inventors. The object of the present invention is to provide an apparatus that can continuously and efficiently produce not only SiO fine powder but also zirconia powder.

(問題点を解決するための手段) 上述した要請に応えられる装置の開発を目指し、本発明
者らは、5iO7粉末または5i02系酸化物原料と炭
素含有物、および/または金属珪素粉末との原料混合物
から310微粉末および2rO7粉末などの副製品を連
続的に効率良く製造するための装置について種々検討し
た結果、竪型炉の形式を踏襄した次の事項を要旨構成と
する手段が有効であることがわかった。
(Means for Solving the Problems) Aiming to develop an apparatus that can meet the above-mentioned demands, the present inventors have developed a raw material of 5iO7 powder or 5i02-based oxide raw material, carbon-containing material, and/or metal silicon powder. As a result of various studies on devices for continuously and efficiently producing by-products such as 310 fine powder and 2rO7 powder from a mixture, it was found that an effective means that incorporates the form of a vertical furnace and has the following points as its main structure. I found out something.

主としてSiO□系酸化物粉末からなる原料混合物を、
減圧非酸化性雰囲気中で熱処理することによりSiO蒸
気を発生させ、その後このSiO蒸気を気相中で凝縮さ
せてSiO粉末として回収する装置であって、 上・下にそれぞれ原料供給系、副製品取出し系を接続し
てなる主反応塔内に、上下方向が予熱帯、均熱帯、冷却
帯として作用するマツフルを設け、このマツフルの中央
部均熱帯からは水平方向に突出するSiO蒸気搬送用パ
イプを配設すると共にその搬送用パイプの他端にはSi
O粉未回収室を配設し、そして前記マツフルおよび搬送
用パイプのまわりには発熱体を配設した構成を有するS
iO微粉末等の連続製造装置。
A raw material mixture mainly consisting of SiO□-based oxide powder,
A device that generates SiO vapor by heat treatment in a reduced pressure non-oxidizing atmosphere, and then condenses this SiO vapor in the gas phase and recovers it as SiO powder, with a raw material supply system and a by-product at the top and bottom, respectively. In the main reaction tower connected to the extraction system, there is a Matsufuru whose vertical direction functions as a pre-soaking zone, a soaking zone, and a cooling zone, and from the central soaking zone of the Matsufuru there is a pipe for conveying SiO vapor that protrudes horizontally. and Si at the other end of the conveying pipe.
An S having a configuration in which an O powder uncollected chamber is provided, and a heating element is provided around the matsufuru and the conveying pipe.
Continuous production equipment for iO fine powder, etc.

次に、上記装置について具体的に説明する。第1図は、
本発明の代表的な構成例であり、原料の供給から主製品
の反応残材である副製品の排出に至るまでが竪型炉の形
式を有し、主反応塔が予熱帯、均熱帯、冷却帯となって
いて、本発明で回収しようとするSiO微粉末は前記均
熱帯から水平方向に1以上、より好ましくは複数個のS
iO蒸気(般送用バイブを具えているものである。
Next, the above device will be specifically explained. Figure 1 shows
This is a typical configuration example of the present invention, in which the process from supplying raw materials to discharging by-products, which are reaction residues of the main product, is in the form of a vertical furnace, and the main reaction tower has a pre-heating zone, a soaking zone, The SiO fine powder to be recovered in the present invention is a cooling zone, and the SiO fine powder to be recovered in the present invention is distributed horizontally from the soaking zone to one or more, more preferably a plurality of S
iO vapor (equipped with a general purpose vibrator).

図において、図示の符号1は、竪形減圧熱処理炉である
主反応塔であって、この塔内軸方向(上下方向)には上
部から予熱帯A、均熱帯B、冷却帯Cとなっているマツ
フル2が貫通するように配設しである。このマツフル2
の上端塔外には、2個の装入用バルブ3a、 3bを介
在させた上・下原料ホッパー4a、 4bからなる原料
供給系が接続され、また該マツフル2の下端塔外には、
副製品取出しシュート5、シールバルブ6、副製品回収
室7からなる副製品取出し系が接続されている。
In the figure, the reference numeral 1 is a main reaction tower which is a vertical reduced pressure heat treatment furnace, and in the axial direction (vertical direction) inside this tower, there are a pre-heating zone A, a soaking zone B, and a cooling zone C from the top. It is arranged so that the Matsuful 2 that is in the hole passes through it. This Matsuful 2
A raw material supply system consisting of upper and lower raw material hoppers 4a and 4b with two charging valves 3a and 3b interposed is connected to the outside of the upper end column, and outside the lower end tower of the Matsuful 2,
A by-product extraction system consisting of a by-product extraction chute 5, a seal valve 6, and a by-product recovery chamber 7 is connected.

上記主反応塔1内には、マツフル2のまわり、特に予熱
帯Aと均熱帯Bの領域、および該マツフル2の均熱帯B
部から水平方向に突設した発生Sin蒸気の搬出用パイ
プ8.9のまわりに発熱帯10が配設しである。
Inside the main reaction tower 1, there are areas around the Matsufuru 2, especially a pre-soaking zone A and a soaking zone B, and a soaking zone B of the Matsufuru 2.
A heating zone 10 is disposed around a pipe 8.9 for discharging the generated Sin vapor that protrudes horizontally from the top.

蒸気Sin蒸気の搬送用パイプ8.9の遊端部には、そ
れぞれSiO粉未回収室11.12が気密に接続されて
おり、この回収室11.12下部にはSiO微粉末を外
に抜き出すための排出用バルブ13が設けである。なお
、図示の14.はバグフィルタ−115は排気用配管で
、16.は排出用バルブである。
SiO powder unrecovered chambers 11.12 are airtightly connected to the free ends of the pipes 8.9 for conveying the steam, and a SiO powder unrecovered chamber 11.12 is connected to the lower part of the recovery chamber 11.12 for extracting the SiO fine powder to the outside. A discharge valve 13 is provided for this purpose. Note that 14. The bag filter 115 is an exhaust pipe, and 16. is a discharge valve.

上記マツフル2の下端には、内部に充填しておく原料混
合物を支持するための可動開閉ストッパー21があり、
このストッパーを退避させると、マツフル2内に残留す
るSin蒸気を抜き出した後の残材である副製品が落下
し、シールバルブ6、副製品回収室7を通ってジルコニ
ア粉末等の該副製品を抜き出すことができる。
At the lower end of the Matsufuru 2, there is a movable opening/closing stopper 21 for supporting the raw material mixture filled inside.
When this stopper is evacuated, the by-products remaining after the Sin vapor remaining in the Matsufuru 2 has been extracted fall and pass through the seal valve 6 and the by-product recovery chamber 7 to collect the by-products such as zirconia powder. It can be extracted.

なお、図示の符号17.18は、非酸化性ガス注入口で
、Sin蒸気のキャリアガスとなり、最終的にはフィル
ターを通り排気用配管15を経てロークリ−ポンプ等を
用いる真空排気装置に吸引される。
Reference numerals 17 and 18 in the figure indicate non-oxidizing gas injection ports, which become carrier gas for the Sin vapor, and are finally sucked into a vacuum evacuation device using a Lochley pump or the like through a filter and exhaust piping 15. Ru.

また、上記マツフル2は発生したSiO蒸気から発熱体
lOを保護するのに有効であり、19は発熱体空間部分
の排気用配管、20はバクフィルターの逆洗用のガス注
入口である。
Further, the above-mentioned Matsufuru 2 is effective in protecting the heating element 1O from the generated SiO vapor, 19 is a pipe for exhausting the space of the heating element, and 20 is a gas inlet for backwashing the back filter.

上述した説明において、発熱体10は黒鉛質の棒状のも
のを配設する形式を好適例とし、主反応室を構成する炉
体は水冷ジャケットを配設した形式、マツフル2および
Si01M送用パイプ8,9の材質としては黒鉛系、S
iC系のものが好適であり、さらに炉壁には黒鉛系等の
断熱材を用いるのが好適である。
In the above description, a preferred example is a type in which the heating element 10 is a rod-shaped graphite material, a type in which the furnace body constituting the main reaction chamber is provided with a water cooling jacket, a Matsufuru 2 and a Si01M delivery pipe 8. , 9 are graphite-based, S
It is preferable to use an iC-based material, and it is also preferable to use a graphite-based heat insulating material for the furnace wall.

(作 用) さて、課題解決のために採用した上記製造装置によって
、SiO微粉末を製造する方法について以    ′下
にその具体的内容を説明する。
(Function) Now, the specific details of the method for manufacturing SiO fine powder using the above-mentioned manufacturing apparatus adopted to solve the problem will be explained below.

本発明製造装置に使用するSiO□系原料粉末としては
、特に限定されないが、SiO蒸気を効率良(発生させ
るために、微細な粉末の方が望ましい。
The SiO□-based raw material powder used in the manufacturing apparatus of the present invention is not particularly limited, but fine powder is preferable in order to efficiently generate SiO vapor.

また、得られるSiO微粉末を高純度に維持するために
、使用する5i02扮末も高純度のものの方が良い。例
えば天然の高純度石英粉末や水ガラスに酸あるいは炭酸
ガスを反応させて製造される:いわゆる湿式法によるS
iO□粉末などが好適である。その他、5in2を含む
酸化物粉末が原料として有効である。例えば、SiO2
を含む酸化物としては、ジルコン(ZrO7・SiO2
)粉末、ムライト(3A1203 ・2SiO2)粉末
、ワラストナイト(CaO−5in2)粉末などがある
。さらにはこうした成分を含有する酸化物のガラス粉末
も使用可能である。
Furthermore, in order to maintain the resulting SiO fine powder at a high purity, it is preferable that the 5i02 powder used be of high purity. For example, it is manufactured by reacting natural high-purity quartz powder or water glass with acid or carbon dioxide gas: S by the so-called wet method.
iO□ powder is suitable. In addition, oxide powder containing 5in2 is effective as a raw material. For example, SiO2
Examples of oxides containing zircon (ZrO7/SiO2
) powder, mullite (3A1203 2SiO2) powder, wollastonite (CaO-5in2) powder, etc. Furthermore, oxide glass powder containing such components can also be used.

上記SiO□系原料に対しては炭素含有物を混合するが
、炭素含有物としては石油コークスや石炭ピッチ、カー
ボンブラック、各種有機樹脂などいずれを用いてもよい
。また、炭素含有物のかわりに金属珪素粉末を用いても
同様であり、そして炭素含有物と金属珪素粉末を同時に
混合しても同様である。
A carbon-containing substance is mixed with the SiO□-based raw material, and the carbon-containing substance may be petroleum coke, coal pitch, carbon black, various organic resins, or the like. Further, the same effect can be obtained even if metal silicon powder is used instead of the carbon-containing substance, and the same effect can be obtained even if the carbon-containing substance and the metal silicon powder are mixed at the same time.

これらの原料混合粉は、上記原料ホッパー4aから装入
用バルブ3a、 3bを介してガス置換室となる下部原
料ホッパー4bを経て、マツフル2内に連続的に装入さ
れ、マツフル2内に充填された状態となる。
These raw material mixed powders are continuously charged into the Matsufuru 2 from the raw material hopper 4a via the charging valves 3a and 3b to the lower raw material hopper 4b which serves as a gas exchange chamber, and are filled into the Matsufuru 2. The state will be as follows.

次に、マツフル2内に充填されたSi[l□系原料と炭
素含有物物および/または金属珪素粉末との混合粉末、
又はそれらの成形体は0.1気圧以下の非酸化性雰囲気
の減圧下に保持され、発熱体10の作用により1300
〜2000℃の温度範囲に加熱する熱処理を受ける。マ
ツフル2内の雰囲気圧力は、効率的にSin蒸気を発生
させるために、0.1気圧以下にするのが好適である。
Next, a mixed powder of Si[l□-based raw material and carbon-containing material and/or metal silicon powder filled in Matsufuru 2,
Or those molded bodies are held under a reduced pressure of a non-oxidizing atmosphere of 0.1 atmosphere or less, and the heating element 10 acts to generate a temperature of 1300
It undergoes a heat treatment to a temperature range of ~2000°C. The atmospheric pressure within the Matsufuru 2 is preferably set to 0.1 atmosphere or less in order to efficiently generate Sin vapor.

かようにして熱処理を行うと、SiO2粉末と炭素含有
物、あるいは金属S1粉末とを混合しているため、下記
(1)、 (2)式により、それぞれ反応が進行し、S
in蒸気が発生する。
When the heat treatment is performed in this manner, since the SiO2 powder and the carbon-containing material or the metal S1 powder are mixed, reactions proceed according to the following equations (1) and (2), respectively, and S
in steam is generated.

Sin□(Cs)+C(s)  −Sin(g)+CO
(g)  −(1)SiO□(j!、s)+5i(s)
  =  23iO(g)     ・”  (2)(
1)式の反応を1気圧−q、m続して進行させるために
必要な熱力学的温度は、1750℃以上である。ところ
が、上記したように原料の供給から排出までのプロセス
を減圧雰囲気にすれば、(1)式の反応を進行させるた
めに必要な熱力学的な温度は、例えば0.1気圧下では
1640℃、0.O1気圧下では1540℃となり、圧
ノJを1桁下げれば、反応に必要な熱処理温度は100
℃前後低下する。このことから(1)。
Sin□(Cs)+C(s) -Sin(g)+CO
(g) −(1)SiO□(j!, s)+5i(s)
= 23iO(g) ・” (2)(
The thermodynamic temperature required for the reaction of formula 1) to proceed continuously at 1 atm -q, m is 1750°C or higher. However, if the process from supplying raw materials to discharge is performed in a reduced pressure atmosphere as described above, the thermodynamic temperature required to proceed with the reaction of equation (1) is, for example, 1640°C under 0.1 atm. ,0. Under O1 atmosphere, the temperature is 1540℃, and if the pressure is lowered by one order of magnitude, the heat treatment temperature required for the reaction is 100℃.
It decreases around ℃. From this (1).

(2)式の反応を減圧下で行えば、低温度、短時間で熱
処理ができ、SiO蒸気を効率良く発生させることがで
きる。
If the reaction of formula (2) is performed under reduced pressure, heat treatment can be performed at low temperature and in a short time, and SiO vapor can be efficiently generated.

上述の如き減圧熱処理条件下の主反応塔のマツフル2内
で810蒸気を発生させるが、さらに本発明装置は、熱
処理の際に、ガス注入口17.18から非酸化性ガスを
減圧熱処理のための炉の中に導入し、炉内で発生したS
iO蒸気を気相中で凝縮させると同時に気密下で加熱保
温された状態の搬送用パイプ8・・・を経て、SIO粉
未回収室11内へ搬送し、SiO粉末として回収する。
Although 810 steam is generated in the Matsufuru 2 of the main reaction tower under the vacuum heat treatment conditions as described above, the apparatus of the present invention also generates non-oxidizing gas from the gas inlets 17 and 18 for the vacuum heat treatment during the heat treatment. introduced into the furnace, and the S generated in the furnace
While the iO vapor is condensed in the gas phase, it is conveyed to the SIO powder uncollected chamber 11 through the conveying pipe 8 which is heated and kept in an airtight condition, and is recovered as SiO powder.

このときガス注入口17゜18を通り外部より炉内に導
入する非酸化性ガスとしては、N2. 八r、 co、
 82などのガスが好適である。
At this time, N2. 8r, co,
A gas such as 82 is preferred.

こうした非酸化性ガスを外部から導入する理由には以下
の三つの目的がある。
There are three purposes for introducing such a non-oxidizing gas from the outside.

■ SiO蒸気を効率良く被熱処理物から搬送除去させ
る。
■ Efficiently transport and remove SiO vapor from the object to be heat treated.

■ SIO蒸気を急冷することによって気を目から急速
に凝縮させてSiOを超微粉化させる。
■ By rapidly cooling the SIO vapor, Qi is rapidly condensed from the eyes and the SiO is turned into ultra-fine powder.

■ 生成したSiO微粉末を気流に乗せて粉末回収装置
まで搬送させる。
■ The generated SiO fine powder is conveyed to the powder recovery device by air current.

このSiO微粉末の製造方法に関しての従来技術である
特公昭59−50601号公報によれば、SiO蒸気を
先細ノズノベまたは末広ノズルを用いて0.6〜数マツ
ハの速度でノズルから噴射し、断熱膨張させることによ
って急冷し、SiO微粉末を得るとある。しかし、本発
明装置によると、かような製造技術および製造装置上の
繁雑さなしに、単に外部から炉内に非酸化性ガスを導入
することにより、発生したSiO蒸気を気相中でそのま
ま凝縮・搬送させ、容易にSiO微粉末を製造すること
が可能である。
According to Japanese Patent Publication No. 59-50601, which is a prior art related to the manufacturing method of this SiO fine powder, SiO vapor is injected from the nozzle at a speed of 0.6 to several meters using a tapered nozzle or a wide-spread nozzle, and It states that by expanding and rapidly cooling, SiO fine powder is obtained. However, according to the device of the present invention, the generated SiO vapor can be directly condensed in the gas phase by simply introducing non-oxidizing gas into the furnace from the outside without such complicated manufacturing technology and manufacturing equipment. - It is possible to transport and easily produce SiO fine powder.

なお、非酸化性ガス責注入する目的は、前述の■〜■が
上げられるが、SiO蒸気からのSiO粉末の生成の過
程については、SiO蒸気の被熱処理物からの発生と同
時に、注入した非酸化性ガスの急冷作用によりSiO微
粉末が気相中凝縮により生成すると考えられる。そして
、以上の過程で発生したSiO微粉末は前記非酸化性ガ
スの気流に乗せてSiO粉未回収室11まで順送させた
後、排出用バルブ13. 16から取出し、一方ガスに
ついてはバグフィルタ−14を経由させて排気用配管1
5を通じて排気する。
The purpose of injecting a non-oxidizing gas is as mentioned in (1) to (3) mentioned above, but regarding the process of generating SiO powder from SiO vapor, the injected non-oxidizing gas is It is believed that fine SiO powder is produced by condensation in the gas phase due to the rapid cooling action of the oxidizing gas. Then, the SiO fine powder generated in the above process is carried by the non-oxidizing gas airflow and transported to the SiO powder unrecovery chamber 11, and then the discharge valve 13. 16, while the gas is passed through the bag filter 14 to the exhaust pipe 1.
Exhaust through 5.

一方、マツフル2下端からはストッパー21を進退させ
ながらジルコニア粉末等の副製品を取出す。
On the other hand, by-products such as zirconia powder are taken out from the lower end of the Matsufuru 2 while moving the stopper 21 back and forth.

(実施例) SiO2含有199.5%のSiO2¥A末およびZr
O□とSiO□の合計含有量が99.0%のジルコン粉
末と石炭ピッチとから、SiO□と石炭ピッチ中の固定
炭素量との混合モル比(C/5IG2)が1.0 とな
るように均一に混合し、原料混合物を得た。これらの原
料混合物を第1図に示した装置を用いて第2図に示した
温度・圧カバターンにて熱処理を行った。その結果、S
iO粉未回収室からは粒径が0.1 μm以下のSiO
微粉末が収率70%以上で大量に得られた。
(Example) SiO2 containing 199.5% SiO2\A powder and Zr
From zircon powder and coal pitch whose total content of O□ and SiO□ is 99.0%, the mixing molar ratio (C/5IG2) of SiO□ and the amount of fixed carbon in the coal pitch is 1.0. were uniformly mixed to obtain a raw material mixture. These raw material mixtures were heat-treated using the apparatus shown in FIG. 1 at the temperature and pressure cover turn shown in FIG. 2. As a result, S
SiO with a particle size of 0.1 μm or less is collected from the iO powder uncollected chamber.
A large amount of fine powder was obtained with a yield of 70% or more.

一方、副製品回収室には、99%以上の高純度ジルコニ
ア粉末が高収率で大量に製造できた。
On the other hand, in the by-product recovery room, high-purity zirconia powder of 99% or higher was produced in large quantities at a high yield.

(発明の効果) 以上述べたように本発明製費装置によれば、5i02系
原料と、炭素含有物または金属珪素粉末とからなる原料
混合物から、SiO微粉末のみならびSiO微粉末と原
料中に含まれる成分である酸化物粉末(例えばジルコニ
ア粉末)を、連続的に効率良く区別して取出しfW、る
形で製造できる。
(Effects of the Invention) As described above, according to the cost-producing apparatus of the present invention, from a raw material mixture consisting of a 5i02-based raw material and a carbon-containing material or a metal silicon powder, only SiO fine powder and SiO fine powder and raw material are mixed. The oxide powder (for example, zirconia powder) that is a component contained in the product can be manufactured by continuously and efficiently distinguishing and taking out fW.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明装置の断面図、 第2図は、実施例で採用した熱処理時のヒートパターン
の説明図である。 ■・・・主反応塔    2・・・マツフル3a、 3
b・・・装入用バルブ 4a・・・上原料ホッパー 4b・・・下原料ホッパー 5・・・排出シュート  6・・・シールバルブ7・・
・副製品回収室 8.9・・・搬送用パイプ(Sin蒸気)lO・・・発
熱体     11.12・・・SiO粉未回収室13
、16・・・排出用バルブ 14、14 ’・・・バルブフィルター15・・・排気
用配管 17、18・・・ガス注入口(非酸化性)19・・・排
気用配管 20・・・逆洗用ガス注入口 21・・・ストッパー
FIG. 1 is a cross-sectional view of the apparatus of the present invention, and FIG. 2 is an explanatory diagram of a heat pattern during heat treatment employed in an example. ■...Main reaction tower 2...Matsuful 3a, 3
b...Charging valve 4a...Upper raw material hopper 4b...Lower raw material hopper 5...Discharge chute 6...Seal valve 7...
・By-product recovery room 8.9...Transport pipe (Sin vapor) lO...Heating element 11.12...SiO powder uncollected room 13
, 16...Discharge valve 14, 14'...Valve filter 15...Exhaust pipe 17, 18...Gas inlet (non-oxidizing) 19...Exhaust pipe 20...Reverse Cleaning gas inlet 21...stopper

Claims (1)

【特許請求の範囲】 1、主としてSiO_2系酸化物粉末からなる原料混合
物を減圧非酸化性雰囲気中で熱処理することによりSi
O蒸気を発生させ、その後このSiO蒸気を気相中で凝
縮させてSiO粉末として回収する装置であって、 上・下にそれぞれ原料供給系、副製品取出 し系を接続してなる主反応塔内に、上下方向が予熱帯、
均熱帯、冷却帯として作用するマッフルを設け、このマ
ッフルの中央部均熱帯からは水平方向に突出するSiO
蒸気搬送用パイプを配設すると共にその搬送用パイプの
他端にはSiO粉末回収室を配設し、そして前記マッフ
ルおよび搬送用パイプのまわりには発熱体を配設した構
成を有するSiO微粉末等の連続製造装置。
[Claims] 1. Si
This is a device that generates O vapor, then condenses this SiO vapor in the gas phase and recovers it as SiO powder, and has a main reaction tower with a raw material supply system and a by-product extraction system connected to the top and bottom, respectively. , the vertical direction is the preparatory zone,
A muffle is provided that acts as a soaking zone and a cooling zone, and from the central soaking zone of this muffle, SiO protrudes horizontally.
SiO fine powder having a structure in which a steam conveying pipe is provided, a SiO powder recovery chamber is provided at the other end of the conveying pipe, and a heating element is provided around the muffle and the conveying pipe. etc. continuous manufacturing equipment.
JP24559986A 1986-10-17 1986-10-17 Apparatus for continuous production of sio fine powder or such Pending JPS63103815A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24559986A JPS63103815A (en) 1986-10-17 1986-10-17 Apparatus for continuous production of sio fine powder or such

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24559986A JPS63103815A (en) 1986-10-17 1986-10-17 Apparatus for continuous production of sio fine powder or such

Publications (1)

Publication Number Publication Date
JPS63103815A true JPS63103815A (en) 1988-05-09

Family

ID=17136117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24559986A Pending JPS63103815A (en) 1986-10-17 1986-10-17 Apparatus for continuous production of sio fine powder or such

Country Status (1)

Country Link
JP (1) JPS63103815A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395249B1 (en) 1997-12-25 2002-05-28 Nippon Steel Corporation Production process and apparatus for high purity silicon
US6821495B2 (en) 2000-02-04 2004-11-23 Shin-Etsu Chemical Co., Ltd. Method for the continuous production of silicon oxide powder
JP2005247654A (en) * 2004-03-05 2005-09-15 Nippon Steel Corp SiO PRODUCING APPARATUS AND SiO MANUFACTURING APPARATUS
US7794681B2 (en) 2006-04-24 2010-09-14 Shin-Etsu Chemical Co., Ltd. Method for producing silicon oxide powder
WO2013141024A1 (en) * 2012-03-22 2013-09-26 Shin-Etsu Chemical Co., Ltd. Method and system for the production of silicon oxide deposit
CN103395836A (en) * 2013-08-15 2013-11-20 蚌埠中恒新材料科技有限责任公司 Collecting device for silicon monoxide generated in process of smelting zircon sand by electric arc furnace
US20140106221A1 (en) * 2012-10-16 2014-04-17 Lg Chem, Ltd. Silicon oxide for anode active material of secondary battery
WO2014126272A1 (en) * 2013-02-13 2014-08-21 한국에너지기술연구원 Device for manufacturing siox nanopowder which is equipped with silicon melting crucible having sliding-type discharge structure, and method for manufacturing siox nanopowder using same
KR20200009943A (en) 2018-07-20 2020-01-30 대주전자재료 주식회사 Silicon-silicon dioxide-based sintered body, Method of manufacturing thereof and gas barrer film using the same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395249B1 (en) 1997-12-25 2002-05-28 Nippon Steel Corporation Production process and apparatus for high purity silicon
US6821495B2 (en) 2000-02-04 2004-11-23 Shin-Etsu Chemical Co., Ltd. Method for the continuous production of silicon oxide powder
US7431899B2 (en) 2000-02-04 2008-10-07 Shin-Etsu Chemical Co., Ltd. Apparatus for the continuous production of silicon oxide powder
JP2005247654A (en) * 2004-03-05 2005-09-15 Nippon Steel Corp SiO PRODUCING APPARATUS AND SiO MANUFACTURING APPARATUS
JP4680521B2 (en) * 2004-03-05 2011-05-11 新日鉄マテリアルズ株式会社 SiO generating apparatus and SiO manufacturing apparatus
US7794681B2 (en) 2006-04-24 2010-09-14 Shin-Etsu Chemical Co., Ltd. Method for producing silicon oxide powder
WO2013141024A1 (en) * 2012-03-22 2013-09-26 Shin-Etsu Chemical Co., Ltd. Method and system for the production of silicon oxide deposit
KR20140138109A (en) 2012-03-22 2014-12-03 신에쓰 가가꾸 고교 가부시끼가이샤 Method and system for the production of silicon oxide deposit
US9790095B2 (en) 2012-03-22 2017-10-17 Shin-Etsu Chemical Co., Ltd. Method and system for the production of silicon oxide deposit
US20140106221A1 (en) * 2012-10-16 2014-04-17 Lg Chem, Ltd. Silicon oxide for anode active material of secondary battery
WO2014126272A1 (en) * 2013-02-13 2014-08-21 한국에너지기술연구원 Device for manufacturing siox nanopowder which is equipped with silicon melting crucible having sliding-type discharge structure, and method for manufacturing siox nanopowder using same
US9975782B2 (en) 2013-02-13 2018-05-22 Korea Institute Of Energy Research SiOx nanoparticle manufacturing apparatus including crucible for silicon melting having sliding type tapping structure and manufacturing method of SiOx nanoparticle using the same
CN103395836A (en) * 2013-08-15 2013-11-20 蚌埠中恒新材料科技有限责任公司 Collecting device for silicon monoxide generated in process of smelting zircon sand by electric arc furnace
KR20200009943A (en) 2018-07-20 2020-01-30 대주전자재료 주식회사 Silicon-silicon dioxide-based sintered body, Method of manufacturing thereof and gas barrer film using the same

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