JPS63102348A - Waveform transmission device - Google Patents

Abstract

PURPOSE:To produce a waveform transmission device suitable for use with a signal transmission line in a semiconductor integrated circuit without using an inductor or non-linear capacitor by a method wherein a soliton exciter is provided at one end of a semiconductor region and a soliton detector is provided at the other end of the semiconductor. CONSTITUTION:On an insulating layer 104 provided on an n-region 102, a soliton exciting electrode (SE electrode) 105, soliton transmission control electrode (STC electrode) 106, and a soliton detecting electrode (SD electrode) 107 are built. The n-region 102 is completely depleted through contact with a p-substrate 101. A process follows wherein a positive DC bias voltage is applied to the STC electrode 106, which deepens the potential of the depletion region of the n-region 102. Then, a positive voltage is applied to the SG electrode 108, which causes electrons to travel from an n<+>-region 103 into the n-region 102. A process follows wherein the SG electrode 108 is freed of the positive voltage for the electrons to be entrapped in the n-region 102. Under the conditions, pulses are applied to the SE electrode 105, which results in the excitation of a solitary wave (soliton wave) in the electrons in the n-region 102 in the vicinity of the SE electrode 105. The soliton wave is transmitted to the opposite side with the passage of time.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention utilizes electrons confined in semiconductors to
iton (excitation and transmission of solitons).

The present invention relates to a waveform transmission device that performs detection.

BACKGROUND OF THE INVENTION Conventional waveform transmission devices include nonlinear LC circuits (
For example, in the literature, “J Physics
i, J, Phys, Soc, Jpn, vol.
28.

pp. 1366-1367.1970).

Figure 4 shows this nonlinear LC circuit, where the voltage (Z)n, etc. across the inductor L and the current flowing therethrough (
In, etc.) The relationship between the current flowing through a nonlinear capacitor is as follows: Using the time change of the charge qn accumulated in the nonlinear capacitor, convert n to n-1 in equation (1), and subtract equation (1) from it. Therefore, From equations (2) and (3), the following circuit equation is obtained.

On the other hand, a nonlinear capacitor C (such as a variable capacitance diode)
V) can be approximated by (However, vo: The DC bias voltages Q(To) and F(vo) applied to the nonlinear capacitor are determined by the bias voltage and have dimensions of charge and voltage, respectively. In particular, F(To) is called a characteristic voltage.) (5)
Using the formula, the charge qn is vn==vo+vn (where v
n: When the signal voltage is n... (6) Substituting equation (6) into equation (4)... (7) This theoretically The equation of motion of an exponential lattice (also called Toda lattice) in which a soliton (solitary wave) is shown (for example, the literature ``
J Physics Niss JP N J (M, Toda.

J, Phys, Soc, Jpn, vol, 22, I)
, 431~. 1967).

The correspondence between the two systems is as follows.

Mechanical system〉 Electrical system〉 Spring force fn←−→voltage vn Mass m ÷−−÷Inductance L Spring constant a
÷-1→Characteristic voltage spring constant b ←--→If the soliton solution of equation (8) is rewritten using the correspondence greater than or equal to the reciprocal of charge, the soliton solution of the nonlinear LO circuit can be obtained.

For example, a one-soliton solution is expressed by the following equation.

V'n=F(VD) sinh2k sech2(kn-
wt) −・−・−・(9) However, W2=inh2k
(10) LC(To) Mu: As described above, solitons in nonlinear LC circuits have been found to correspond to exponential lattice. .

Problems to be Solved by the Invention However, in the above configuration, since the inductor L and the nonlinear cavantor CM are used, the signal transmission means of the semiconductor integrated circuit (for example, semiconductor memory, image sensor, etc.) that is often used is Not suitable for transmission line applications.

The present invention takes these points into consideration and provides an inductor.

It is an object of the present invention to provide a waveform transmission device that does not use a nonlinear capacitor and is suitable for a signal transmission line of a semiconductor integrated circuit.

Means for Solving the Problems The present invention applies an electric field to charges confined in a depleted semiconductor region that is long in one direction to create a soliton transmission medium, and a soliton excitation part and other parts are formed at one end of the semiconductor region. The structure includes a soliton detection section at the end.

The principle of the present invention is to make water correspond to electric charge, whereas in the conventional example, the grid corresponds to the LC circuit.

Both the lattice and water generate solitons, but the difference is that the restoring force in the lattice's vibration is due to deviation from its fixed position, and the restoring force in the water's vibration is due to gravity.

In order to associate water with charges (for example, free electrons), it is necessary to find a restoring force corresponding to gravity, but in the present invention, an electric field is used as the restoring force.

The equation of motion of the exponential lattice in equation (8) is obtained by approximating the lattice as a continuum (however, fn = 2f(1)), which is the Cortev-Gu de Vries equation (hereinafter -d
V (abbreviated as equation). This -dV equation was first derived as an equation to describe shallow water waves, and is also applied to charge waves.

By performing variable transformation on equation (12), we obtain the following standard form of the -dV equation.

(However, η represents the difference between the charge wave and the waveless surface.

) The solitary wave group of equation (13) becomes the following equation.

Effect of the present invention With the above-described configuration, the soliton excitation unit excites solitons (solitary waves) in the charges (for example, free electrons) confined in the semiconductor region in a depleted state by electrostatic induction,
By transmitting the solitons in the electric charge and detecting the solitons again by electrostatic induction in the soliton detection section, even if the electric charge confined in the semiconductor region fluctuates due to thermal noise, the minute signal is converted into a soliton wave without deterioration. It can be transmitted reliably. This is a typical example in which the Boltzmann distribution side is not applied in a nonlinear system, so the influence of noise can be avoided.

Embodiment FIG. 1 shows a waveform transmission device according to a first embodiment of the present invention.
-B' sectional view, and C in the same figure represents a partially modified plan view of A in the same figure.

In FIG. 1, a p-substrate 101 has a low impurity concentration (concentration 1i: 10"-710" ff1-) elongated in one direction.
3) n area 1o2. High impurity concentration (H=1o' 8~
102 GcIll-3) n+ region 103 is formed. A soliton excitation electrode (hereinafter referred to as SK electrode) 105 is placed on the insulating layer 104 on the n region 102. Soliton transmission control electrode (hereinafter referred to as STC electrode) 106. A detection electrode (hereinafter referred to as an SD electrode) 107 is formed. Furthermore, n area 102
A switch gate electrode (hereinafter referred to as an SG electrode) 108 is formed on the insulating layer 104 between the n+ region 103 and the n+ region 103 .

Further, the potential of the n+ region 103 is applied from an external power source through a metal electrode 109 in contact with the n+ region 103.

The operation of the waveform transmission device of this embodiment configured as described above will be described below.

N region 102 is completely depleted by contact with p substrate 101. (If 1o1 p substrate is insufficient, 1o1 n region
A p+ region for channel stop may be formed around 2. ) Next, by applying a positive DC bias voltage to the STC electrode, the potential of the depletion region of the n region 102 becomes deeper. At this time, a positive voltage is applied to the SG electrode 108 to
Electrons are injected into the n-region 102 from then on. After that, when the positive voltage applied to the SG electrode 108 is removed, the electrons are transferred to the n region 1.
02 is trapped. In this state, if a pulse indicated by φsg in FIG. 2 is applied to the SE electrode 105, the SE
A solitary wave (soliton wave) as shown in FIG. 2 is excited in the electrons in the n region 102 near the electrode 105, and is transmitted to the opposite side as shown in FIG. 2 c and d over time.

When this solitary wave reaches the other end of the n-region 102, φSD as shown in FIG. 2e is detected at the SD electrode 107.

Note that, as shown in FIG. 1C, the SIC electrode 105. SD electrode 1
If the width of the n-region 102 near 07 is made smaller, the width of the n-region 102 in the vicinity of 1.07 in FIG. The amplitudes of φsE and φS of θ become large.

As described above, according to this embodiment, electrons are confined in a semiconductor region in a depleted state and used as a soliton transmission section, and a soliton wave is excited and detected in the confined electrons using electrostatic induction. Waveform transmission is realized. This is because the soliton waveform can be transmitted with almost no deterioration due to nonlinear effects, so it is not affected by fluctuations in the trapped electrons due to thermal noise. Therefore, it is suitable for transmitting minute signals.

FIG. 3 shows a waveform transmission device according to a second embodiment of the present invention, where a is a plan view and 8-8 in FIG.
B' is a cross-sectional view, and C is a cross-sectional view taken along line C-C' in figure a.

Diagram M3 differs from FIG. 1 in the shape of the n-region 301 in plan view and in the p
A pair of + regions 302 and p+ regions 303 are provided, and each region is connected to a metal electrode 3o4. This is due to contact with the metal electrode 305, and is used in a reverse bias state. The basic operation is the same as that shown in FIG.

Effects of the Invention As explained above, according to the present invention, soliton waves of charges confined in a semiconductor can be excited, transmitted, and detected without being affected by thermal noise, so that signal transmission lines of semiconductor integrated circuits can be used. It can be used as a material, and its practical effects are great.

[Brief explanation of the drawing]

FIG. 1 is a plan view showing a waveform transmission device according to a first embodiment of the present invention, the same figure is a sectional view taken along line B-B' in FIG. 1, and FIG. A plan view showing the state in which the
3A is a plan view showing a waveform transmission device according to a second embodiment of the present invention; FIG. is a G-C' cross-sectional view of the same figure,
FIG. 4 is a circuit diagram showing a conventional waveform transmission device. 101...P substrate, 102...N region, 103...N+ region 104...Insulating layer, 105...Niton excitation electrode, 106...
... Soliton transmission suppressing electrode, 107 ... Detection electrode, 108 ... Switch gate electric fence, 10
9...Metal electrode. Name of agent Patent attorney Toshio Nakao and 1 other person (Hisashi) Figure 1 Figure 2 Time

Claims (3)

[Claims] (1) Charges are confined in a semiconductor region with a low impurity concentration that is elongated in one direction, and an electric field is applied to the semiconductor region across an insulating layer to create a solitary wave transmission medium, and a solitary wave is transmitted to one end of the semiconductor region. A waveform transmission device comprising an excitation section and a solitary wave detection section at the other end. (2) The waveform transmission device according to claim 1, wherein the solitary wave excitation section and the solitary wave detection section are formed of electrodes that are electrostatically coupled to the semiconductor region. (3) The waveform transmission device according to claim 1, wherein a cross-sectional area of the semiconductor region near the solitary wave excitation section and the solitary wave detection section is smaller than other portions.