JPS6266643A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6266643A
JPS6266643A JP60206845A JP20684585A JPS6266643A JP S6266643 A JPS6266643 A JP S6266643A JP 60206845 A JP60206845 A JP 60206845A JP 20684585 A JP20684585 A JP 20684585A JP S6266643 A JPS6266643 A JP S6266643A
Authority
JP
Japan
Prior art keywords
wire
resin
semiconductor element
thin
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60206845A
Other languages
Japanese (ja)
Inventor
Hiroaki Fujimoto
博昭 藤本
Kenzo Hatada
畑田　賢造
Nobutoshi Takehashi
信逸 竹橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60206845A priority Critical patent/JPS6266643A/en
Publication of JPS6266643A publication Critical patent/JPS6266643A/en
Pending legal-status Critical Current

Links

Classifications

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To reduce the cost of a semiconductor device by using fine conductive resin wirings for the connection of the electrodes of a semiconductor element with external electrodes. CONSTITUTION:Powders 11 of Ni, Al are mixed in thermoplastic resin 10 such as acryl, polyethylene, a film of Ni, Al is formed on the surface, or resin 30 which is conductive in the center or on the surface is coated with insulating resin 31 to form a fine conductive resin wire 5. The diameter of the wire is approx. 5-100mum, and selected according to the electrode size, current capacity of a semiconductor element. When the wire is inserted into a capillary hole as usual, a sphere is formed at the end of the wire 5 by a torch and the sphere is pressed to the electrode of the element, it is secured with resin, and electrically connected with meal powder. According to this construction, the wire is much lower in cost than an Au wire, and since the thermal expansion coefficients of the sealing resin and the fine wire are substantially equal, no disconnection or the wire occurs due to thermal distortion.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置に関し、特にＩＣ，ＬＳＩ。[Detailed description of the invention] Industrial applications The present invention relates to semiconductor devices, particularly ICs and LSIs.

ハイブリッドＩＣ等の半導体素子の電極と半導体素子の
電極を外部へ取り出す為の外部電極との電気的接続に用
いるボンディングワイヤーに関するものである。The present invention relates to a bonding wire used for electrical connection between an electrode of a semiconductor element such as a hybrid IC and an external electrode for taking out the electrode of the semiconductor element to the outside.

従来の技術 従来の技術として樹脂封止半導体装置を第４図とともに
説明する。まず、コバール等を用い、プレス加工により
形成されたコムフレーム２１の、半導体素子塔載部２２
にムｇペースト等の樹脂２３を用い、半導体素子２４を
固着する。その後、ムＵ、ム１等の金属細線２５を用い
半導体素子の電極２６と外部電極２９と電気的に一体で
あるコムフレームの内部電極２７を電気的に接続し、半
導体素子を保護する為にエポキシ等の封止樹脂２８を用
い、封止したものである。この時、コムフレームの内部
電極２７の表面には、金属細線の接続性を良好にする為
に、ムＵ、λｇ等のメッキ処理を行う。ここで、金属細
線２５には、一般に径が２０〜１００μ鶏程度のものが
用いられ、その接続方法は熱圧着法、超音波法、超音波
熱圧着法があるが、超音波法は、接続時に方向性がある
ため自動化が困難であり、接続の速度も遅い。したがっ
て、現状では熱圧着法、超音波熱圧着法が主に使用され
ている。この方法の場合、金属細線の先端を球状にする
必要があり、その手段としては金属細線を接続のたびに
、水素トーチ、電気トーチ等により溶かす方法が用いら
れている。しだがってこの方法を用いる場合の金属細線
の材質としては、金属細線の溶融時に酸化膜が形成され
ず、安定した球が形成できるムＵが用いられている。2. Description of the Related Art As a prior art, a resin-sealed semiconductor device will be explained with reference to FIG. First, the semiconductor element mounting portion 22 of the comb frame 21 is formed by press processing using Kovar or the like.
A semiconductor element 24 is fixed using a resin 23 such as mug paste. Thereafter, the internal electrode 27 of the comb frame, which is electrically integrated with the electrode 26 of the semiconductor element and the external electrode 29, is electrically connected using thin metal wires 25 such as MuU and Mu1 to protect the semiconductor element. It is sealed using a sealing resin 28 such as epoxy. At this time, the surface of the internal electrode 27 of the comb frame is plated with muU, λg, etc. in order to improve the connectivity of the thin metal wire. Here, the thin metal wire 25 generally has a diameter of about 20 to 100 μm, and its connection methods include thermocompression bonding, ultrasonic bonding, and ultrasonic thermocompression bonding. They are sometimes directional, difficult to automate, and connections are slow. Therefore, at present, thermocompression bonding methods and ultrasonic thermocompression bonding methods are mainly used. In this method, it is necessary to make the tip of the thin metal wire into a spherical shape, and the method used for this purpose is to melt the thin metal wire with a hydrogen torch, electric torch, etc. each time the thin metal wire is connected. Therefore, when using this method, the material used for the thin metal wire is MuU, which does not form an oxide film when the thin metal wire is melted and can form a stable sphere.

発明が解決しようとする問題点 このような従来法では、半導体素子の電極と外部電極と
の電気的な接続に金属細線を用いているため、次に示す
様な欠点がある。　　“（１）主に用いられている熱圧
着法、超音波熱圧着法では、Ａｕを用いるため非常にコ
ストの高いものとなる。Problems to be Solved by the Invention In this conventional method, since thin metal wires are used for electrical connection between the electrodes of the semiconductor element and the external electrodes, there are the following drawbacks. “(1) The mainly used thermocompression bonding method and ultrasonic thermocompression bonding method use Au and are therefore extremely expensive.

（２）　　人Ｕに比ベコストの安いムｌを用いた場合は
、接続方法が、超音波であるため接続の方向性があり、
生産性が悪い。(2) When using Ml, which is cheaper compared to U, the connection method is ultrasonic, so there is a directionality of connection.
Poor productivity.

（３）樹脂封止の半導体装置の場合、金属細線の材質が
人４では、耐食性が悪く信頼性が低い。(3) In the case of a resin-sealed semiconductor device, if the material of the thin metal wire is 4, the corrosion resistance is poor and the reliability is low.

（４）　　半導体装置の外部電極と電気的に接続されて
いる、内部電極の表面に、Ａｕ、Ａｇ等のメッキを施す
必要があり、コスト高である。(4) It is necessary to plate the surface of the internal electrode, which is electrically connected to the external electrode of the semiconductor device, with Au, Ag, etc., resulting in high cost.

（５）樹脂封止の半導体装置の場合、封止樹脂と金属細
線の熱膨張係数が異るため熱ストレスにより、金属細線
が断線する場合があり、信頼性が低い。(5) In the case of a resin-sealed semiconductor device, since the sealing resin and the thin metal wire have different coefficients of thermal expansion, the thin metal wire may break due to thermal stress, resulting in low reliability.

問題点を解決するだめの手段 本発明は、上記問題点を解決するため、半導体素子の電
極と半導体装置の外部電極との電気的な接続をコストの
安い、導電性を有した樹脂細線により行うものである。Means for Solving the Problems In order to solve the above problems, the present invention provides electrical connections between the electrodes of the semiconductor element and the external electrodes of the semiconductor device using thin conductive resin wires that are inexpensive. It is something.

　− 作用 樹脂細線の使用により、低コストで信頼性の高い半導体
装置を得ることが可能となる。- The use of thin working resin wires makes it possible to obtain semiconductor devices with low cost and high reliability.

実施例 本発明の一実施例を、第１図〜第３図とともに説明する
。Embodiment An embodiment of the present invention will be described with reference to FIGS. 1 to 3.

まず、樹脂封止型半導体装置に適用した場合について第
１図と共に説明する。まず、厚みがｏ、１５〜０．３　
ｍｍ程度のコバール等の金属板を打ち抜いて形成したコ
ムフレーム１の半導体素子塔載部２に、人ｇペースト等
の樹脂３を塗布し、その上に半導体素子４を設置しその
後、樹脂３を加熱硬化させ、半導体素子４を半導体素子
塔載部２に固着する。その後半導体素子の電極６と外部
電極９と電気的に一体であるコムフレームの内部電極７
とを導電性樹脂細線５を用いて電気的に接続する。First, a case where the present invention is applied to a resin-sealed semiconductor device will be described with reference to FIG. 1. First, the thickness is o, 15 to 0.3
A resin 3 such as human paste is applied to the semiconductor element mounting part 2 of the COM frame 1, which is formed by punching out a metal plate such as Kovar of about mm in size, and the semiconductor element 4 is placed on top of it. The semiconductor element 4 is fixed to the semiconductor element mounting part 2 by heating and curing. After that, the internal electrode 7 of the comb frame is electrically integrated with the electrode 6 and external electrode 9 of the semiconductor element.
and are electrically connected using a conductive resin thin wire 5.

次に、半導体素子４を保護する為に、エボキ７等の封止
樹脂８を用い、射出成形等により封止する。ここで導電
性樹脂細線５を得る方法としては、例えば第２図４に示
す様に、アクリルＦＥＰ、ポリエチレン等の熱可塑性樹
脂自体に導電性を有した構成が良いが、他の例として熱
可塑性樹脂１０の中に、Ｎ１等の金属粉末１１を混入さ
せる方法、また第２図すに示す様に、アクリル、ＦＫＰ
、ポリエチレン等の熱可塑性樹脂１２の表面にムｅ。Next, in order to protect the semiconductor element 4, it is sealed by injection molding or the like using a sealing resin 8 such as epoxy resin 7. Here, as a method for obtaining the conductive resin thin wire 5, for example, as shown in FIG. There is also a method of mixing metal powder 11 such as N1 into resin 10, and as shown in Figure 2, acrylic, FKP, etc.
, on the surface of the thermoplastic resin 12 such as polyethylene.

Ｎｉ等の金属被膜１３を形成する方法かもしくは細線の
表面あるいは中心部が導電性を有する樹脂３０と、その
他の領域が絶縁樹脂３１である２層構造となったものを
用いても良い（第２図Ｃ）。It is also possible to use a method of forming a metal film 13 such as Ni, or a two-layer structure in which the surface or center of the thin wire is a conductive resin 30 and the other region is an insulating resin 31. Figure 2C).

線径は、５〜１００μｍ程度であり、半導体素子の電極
の寸法、電流容量等から選択する。作製の方法としては
、金属粉末１１を混入する場合は、熱可塑性樹脂１０を
加熱溶融させその中に、金属粉末を混入させ冷却する。The wire diameter is about 5 to 100 μm, and is selected based on the electrode dimensions of the semiconductor element, current capacity, etc. As a manufacturing method, when metal powder 11 is mixed, the thermoplastic resin 10 is heated and melted, the metal powder is mixed therein, and then cooled.

また金属被膜１３を形成する方法としては、無電解メッ
キ等を用いる方法があり、いずれも容易に作製できる。Further, as a method for forming the metal coating 13, there are methods using electroless plating or the like, and either method can be easily produced.

次に、金属粉末を混入した導電性樹脂細線を用いた場合
の接続方法について第３図と共に説明する。まず、第３
図乙に示す様に導電性樹脂細線５を、従来の熱圧着法や
、超音波熱圧着法の時に用いられる、ポンディ／グキャ
ピラリ−１４の孔に挿入する、その後、第３図すに示す
様に水素トーチ、電気トーチを用い導電性樹脂細線６の
先端を溶かし、球１５を形成する。次に第３図Ｃに示す
様に加熱された半導体素子４の電極６に、球１６）ボン
ディングキャピラリー１４を用いて押しあてる。この時
半導体素子４は加熱されているため球１６は変形し、半
導体素子の電極６に導電性樹脂細線６の樹脂１７によっ
て固着される。そして、球１５の中に含まれている金属
粉末１６が、電極６と接し、導電性樹脂細線６と半導体
素子の電極６とが電気的に接続される。次に、第３図ｄ
に示す様にコムフレームの内部電極７に熱圧着等により
接続１〜たものである。この様に、半導体素子の電極と
外部電極との接続に、従来のように高価な金属細線を用
いず４２電性樹脂細線を用いても、接続の方法は従来の
熱圧着法等を用いることができるだめ、新しい設備の必
要がなく、コストの安いものとなる。Next, a connection method using a thin conductive resin wire mixed with metal powder will be described with reference to FIG. 3. First, the third
As shown in FIG. Then, the tip of the thin conductive resin wire 6 is melted using a hydrogen torch and an electric torch to form a sphere 15. Next, as shown in FIG. 3C, the ball 16) is pressed against the electrode 6 of the heated semiconductor element 4 using the bonding capillary 14. At this time, since the semiconductor element 4 is heated, the sphere 16 is deformed and fixed to the electrode 6 of the semiconductor element by the resin 17 of the conductive resin thin wire 6. Then, the metal powder 16 contained in the sphere 15 comes into contact with the electrode 6, and the conductive resin thin wire 6 and the electrode 6 of the semiconductor element are electrically connected. Next, Figure 3 d
As shown in the figure, the internal electrodes 7 of the comb frame are connected by thermocompression bonding or the like. In this way, even if 42 conductive resin thin wires are used to connect the electrodes of semiconductor elements and external electrodes instead of using expensive metal thin wires as in the past, the connection method can still be made using conventional thermocompression bonding methods, etc. Since it can be done, there is no need for new equipment and the cost is low.

発明の効果 以上のように本発明は、半導体素子の電極と外部電極と
の接続に導電性樹脂細線を用いているため、次に示す効
果がある。Effects of the Invention As described above, the present invention uses a thin conductive resin wire to connect the electrodes of the semiconductor element and the external electrodes, and therefore has the following effects.

（１）従来の様に、ムＵ等の高価な金属を使用しないた
め、非常に低コストである。(1) Unlike the conventional method, expensive metals such as aluminum are not used, so the cost is extremely low.

（２）樹脂封止の半導体装置の場合、封止樹脂と導電性
樹脂細線の熱膨張係数がほぼ同等であるため、熱ストレ
スによる断線等がなく信頼性の高いものである。(2) In the case of a resin-sealed semiconductor device, since the coefficient of thermal expansion of the sealing resin and the thin conductive resin wire are almost the same, there is no disconnection due to thermal stress and the device is highly reliable.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例における半導体装置の断面図
、第２図ａ、ｂ、ｃは本実施例装置に用いる樹脂細線の
構造を示す図、第３図ａ　−ｄは本実施例装置における
樹脂細線の接続工程図、第４図は従来の半導体装置の断
面図である。 ２・・・・・・コムフレーム、４・・・・・・半導体素
子、５・・・・・・導電性樹脂細線、８・・・・・・封
止樹脂。FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention, FIGS. 2a, b, and c are diagrams showing the structure of the thin resin wire used in the device of this embodiment, and FIGS. 3a to 3d are diagrams of this embodiment. FIG. 4, which is a process diagram for connecting thin resin wires in the device, is a sectional view of a conventional semiconductor device. 2... Comb frame, 4... Semiconductor element, 5... Conductive resin thin wire, 8... Sealing resin.

Claims (4)

【特許請求の範囲】[Claims] （１）半導体素子の電極と半導体素子の支持体に形成さ
れた導体とを導電性を有した樹脂細線により電気的に接
続した半導体装置。(1) A semiconductor device in which an electrode of a semiconductor element and a conductor formed on a support of the semiconductor element are electrically connected by a thin conductive resin wire. （２）導電性を有した樹脂細線は樹脂中に微小金属を混
入した細線である特許請求の範囲第１項記載の半導体装
置。(2) The semiconductor device according to claim 1, wherein the thin conductive resin wire is a thin wire in which a minute metal is mixed into the resin. （３）導電性を有した樹脂細線は、その表面もしくは中
心部が導電性を有するものである特許請求の範囲第１項
記載の半導体装置。(3) The semiconductor device according to claim 1, wherein the conductive thin resin wire has conductivity at its surface or center. （４）樹脂細線は、その全領域において導電性を有する
ものである特許請求の範囲第１項記載の半導体装置。(4) The semiconductor device according to claim 1, wherein the thin resin wire has conductivity in its entire region.
JP60206845A 1985-09-19 1985-09-19 Semiconductor device Pending JPS6266643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60206845A JPS6266643A (en) 1985-09-19 1985-09-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60206845A JPS6266643A (en) 1985-09-19 1985-09-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6266643A true JPS6266643A (en) 1987-03-26

Family

ID=16530008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60206845A Pending JPS6266643A (en) 1985-09-19 1985-09-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6266643A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321077A (en) * 1996-05-30 1997-12-12 Nec Kyushu Ltd Semiconductor device encapsulated with resin
CN1108569C (en) * 1996-10-01 2003-05-14 国际商业机器公司 Scaleable and extensible system management architecture with dataless endpoints

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321077A (en) * 1996-05-30 1997-12-12 Nec Kyushu Ltd Semiconductor device encapsulated with resin
CN1108569C (en) * 1996-10-01 2003-05-14 国际商业机器公司 Scaleable and extensible system management architecture with dataless endpoints

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