JPS62275790A - Thin-film electromagnetic converter - Google Patents

Thin-film electromagnetic converter

Info

Publication number
JPS62275790A
JPS62275790A JP61119311A JP11931186A JPS62275790A JP S62275790 A JPS62275790 A JP S62275790A JP 61119311 A JP61119311 A JP 61119311A JP 11931186 A JP11931186 A JP 11931186A JP S62275790 A JPS62275790 A JP S62275790A
Authority
JP
Japan
Prior art keywords
thin film
coil
card
magnetic flux
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61119311A
Other languages
Japanese (ja)
Inventor
一義 布施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61119311A priority Critical patent/JPS62275790A/en
Priority to US07/053,758 priority patent/US4818853A/en
Priority to DE8787304623T priority patent/DE3771588D1/en
Priority to EP87304623A priority patent/EP0249356B1/en
Publication of JPS62275790A publication Critical patent/JPS62275790A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 3、発明の詳細な説明 [発明の目的] (産業上の利用分野) 本発明は薄膜電磁変換器に係り、特に半導体メモリを内
蔵したカード内に設けられる薄膜電磁変換器に関する。
[Detailed Description of the Invention] 3. Detailed Description of the Invention [Object of the Invention] (Industrial Application Field) The present invention relates to a thin film electromagnetic transducer, and particularly to a thin film electromagnetic transducer provided in a card incorporating a semiconductor memory. Concerning vessels.

(従来の技術) 近年情報巳の増加に伴ない大量の情報を記憶するHEの
開発が進められている。このため、例えばクレジットカ
ード等のカードにおいても、磁気ストライブの代わりに
半導体メモリを内蔵させて、記憶する情報旦を多くする
ことが試みられている。この場合、半導体メモリと読み
取り装置間の信号の授受の方法として、従来はカード側
の端子と読み取り装置側の端子とを接触させて信号の授
受を行なっていた。しかしながらこの方法によると芸域
的接触の信頼性に問題があった。そこでこの問題を解決
するためカード上に電磁変換器を設けて、カードと読み
取り装置の間で非接触で磁気的に信号の授受を行なう方
法が提案されている。
(Prior Art) In recent years, as the amount of information has increased, HEs that store large amounts of information have been developed. For this reason, attempts have been made to increase the amount of information stored in cards such as credit cards by incorporating semiconductor memories instead of magnetic stripes. In this case, the conventional method for transmitting and receiving signals between the semiconductor memory and the reading device is to bring terminals on the card side into contact with terminals on the reading device side. However, this method had problems with the reliability of artistic contacts. In order to solve this problem, a method has been proposed in which an electromagnetic transducer is provided on the card and signals are exchanged magnetically between the card and the reader without contact.

この方法の一例としてカード内にスパイラル状に形成さ
れた薄膜またはシートコイルから成る電磁変換器を設け
たものがおる。
An example of this method is to provide an electromagnetic transducer consisting of a spirally formed thin film or sheet coil within the card.

ところで半導体メモリを内蔵したカードを現行の磁気ス
トライブを有するカードに代えて使用する場合、現行の
読み取り装置でも使用できることが望まれる。この場合
、現行の読み取り装置に用いられている再生ヘッドは、
その一部を切り欠いたリング状コアに信号検出用コイル
を巻回した型のものであり、効率よく信号を検出するた
めには、切り欠いた空隙部の一端からコアに流入する磁
束が途中で外部へ洩れることなくコア中を流れ、前記空
隙部における他の一端へ向かうようなリターンパスを形
成する必要がある。
By the way, when a card with a built-in semiconductor memory is used in place of a current card having a magnetic stripe, it is desirable that it can be used with current reading devices. In this case, the playback head used in current reading devices is
This type has a ring-shaped core with a part cut out and a signal detection coil wound around it. In order to detect signals efficiently, the magnetic flux flowing into the core from one end of the cut-out gap must be It is necessary to form a return path so that the liquid flows through the core without leaking to the outside and heads toward the other end of the void.

しかしながら従来の電磁変換器はカード内の基板上に薄
膜コイルまたはシートコイルのみを直接設けたものであ
り、このコイル近傍へ再び磁束を戻す強制的なリターン
パスは形成されていなかった。このため現行の読み取り
装置で読み取る場合発生した磁束は読み取り装置の再生
ヘッドへ流入するが、途中で外部へ洩れる割合が多く、
再生ヘッドに巻回された検出コイルに所定の大きざの信
号を生じざぜるためには大きな起電力を必要とし、効率
が悪いという問題があった。
However, conventional electromagnetic transducers are those in which only a thin film coil or sheet coil is directly provided on a substrate within a card, and no forced return path for returning magnetic flux to the vicinity of this coil is formed. For this reason, when reading with current reading devices, the magnetic flux generated flows into the read head of the reading device, but a large proportion of it leaks out to the outside along the way.
In order to generate a signal with a predetermined amplitude in the detection coil wound around the reproducing head, a large electromotive force is required, which poses a problem of poor efficiency.

(発明が解決しようとする問題点) 本発明はカードに内蔵される基板上に薄膜電磁変換器を
設けて同じくカードに内蔵された半導体メモリから情報
を読み取る場合、従来の電磁変換器において問題であっ
たリターンパスが形成されず磁束が途中で外部に洩れる
割合が多いという問題を解決し、従来のカード読み取り
装置を使用しても効率良くカードに内蔵されたメモリ中
の情報を取り出すことのできる薄膜電磁変換器を提供す
ることを目的とする。
(Problems to be Solved by the Invention) The present invention provides a thin-film electromagnetic transducer on a substrate built into a card, and when reading information from a semiconductor memory built into the card, the problem with the conventional electromagnetic transducer is solved. This solves the problem of a high rate of magnetic flux leaking to the outside due to the return path not being formed, making it possible to efficiently retrieve information in the card's built-in memory even when using a conventional card reading device. The purpose is to provide a thin film electromagnetic transducer.

[発明の構成] (問題点を解決するための手段) 本発明は上記の目的を達成するために、半導体メモリを
内蔵したカードに内蔵される基板表面に軟磁性材料より
なる薄膜を形成し、この薄膜上にスパイラル状の薄膜コ
イルを形成して薄膜電磁変換器を構成したものである。
[Structure of the Invention] (Means for Solving the Problems) In order to achieve the above object, the present invention forms a thin film made of a soft magnetic material on the surface of a substrate built into a card incorporating a semiconductor memory, A spiral thin film coil is formed on this thin film to construct a thin film electromagnetic transducer.

(作用) 上記の構成によると、基板上に形成されたコイルの中心
に発生した磁束が、このコイル近傍に再び強制的に戻さ
れるため、読み取り装置の再生ヘッドへ流入した磁束は
この再生ヘッドのコアを流れ、再びコイル近傍へ向う。
(Function) According to the above configuration, the magnetic flux generated at the center of the coil formed on the substrate is forcibly returned to the vicinity of this coil, so that the magnetic flux flowing into the read head of the reading device is It flows through the core and returns to the vicinity of the coil.

従って、再生へラドコアからの磁束の洩れは少なく効率
よく信号が検出できる。
Therefore, there is little leakage of magnetic flux from the rad core to the reproducing device, and signals can be detected efficiently.

(実施例) 以下、本発明に係る薄膜電磁変換器の一実施例を図面を
参照して説明する。
(Example) Hereinafter, an example of a thin film electromagnetic transducer according to the present invention will be described with reference to the drawings.

第1図に本発明の一実施例の構造を示す。図において、
カードに内蔵される基板1上に高透磁率を有する軟磁性
体の薄膜2が形成されており、この薄膜2上に絶縁l1
13が形成されている。この絶縁膜3上にはスパイラル
状に巻かれた薄膜コイル4が形成されており、コイル4
の両端のコイル端子5a、5bを介して基板1に内蔵さ
れた図示せぬ半導体メモリに接続されている。
FIG. 1 shows the structure of an embodiment of the present invention. In the figure,
A thin film 2 of a soft magnetic material having high magnetic permeability is formed on a substrate 1 built into the card, and an insulating l1 is formed on this thin film 2.
13 are formed. A spirally wound thin film coil 4 is formed on this insulating film 3.
It is connected to a semiconductor memory (not shown) built into the substrate 1 via coil terminals 5a and 5b at both ends.

次に本実施例の作用を第2図及び第3図を参照して説明
する。第2図において、6はコイル4に流れる信号電流
により生じた磁束であり、高透磁率を有する薄膜2どの
間に図示するような磁路が形成される。そしてコイル4
の中心に生じた磁束はこの近傍で強制的に薄膜2へ向う
ような磁路となる。
Next, the operation of this embodiment will be explained with reference to FIGS. 2 and 3. In FIG. 2, 6 is a magnetic flux generated by a signal current flowing through the coil 4, and a magnetic path as shown in the figure is formed between the thin films 2 having high magnetic permeability. and coil 4
The magnetic flux generated at the center forms a magnetic path that is forcibly directed toward the thin film 2 in this vicinity.

このように構成された本実施例によるN磁度換器の上方
に、第3図に示すようにコイル7が巻回された読み取り
用再生へラドコア8を配置すると、コイル4により矢印
へ方向に生じた磁束6はヘッドコア8に入る。このヘッ
ドコア8を流れる磁束6は高透磁率の基板2へ向うため
へラドコア8を流れる間の磁束6の外部への洩れは小さ
い。すなわちコイル4の内側に発生した磁束6の大部分
はヘッドコア8を通り簿膜2へ向うバスを形成するため
、4検出用コイル7を効率よく貫くことになる。
When the rad core 8 is placed above the N magnetism converter according to the present embodiment configured in this way, as shown in FIG. The generated magnetic flux 6 enters the head core 8. Since the magnetic flux 6 flowing through the head core 8 is directed toward the substrate 2 having high magnetic permeability, leakage of the magnetic flux 6 to the outside while flowing through the head core 8 is small. In other words, most of the magnetic flux 6 generated inside the coil 4 passes through the head core 8 and forms a bus heading toward the recording film 2, so that it efficiently passes through the four detection coils 7.

本実施例によれば、コイル4の中心に発生した磁束6が
再生へラドコア8内を通って高透磁率簿膜2へ向うため
、ヘッドコア8からの磁束の洩れは小ざく、カードに内
蔵されたメモリ中の情報を効率よく検出することができ
る。
According to this embodiment, since the magnetic flux 6 generated at the center of the coil 4 passes through the RAD core 8 and goes to the high magnetic permeability film 2 for reproduction, the leakage of magnetic flux from the head core 8 is small, and the magnetic flux 6 that is built in the card is information in memory can be detected efficiently.

本実施例ではコイル4を絶縁膜3を介して高透磁率薄膜
2上に形成した場合について説明したが、薄膜2がフェ
ライトのような比抵抗の大きい材料で形成された場合は
絶縁膜3は必要なく、直接薄膜2上にコイル4を形成し
てもよい。
In this embodiment, a case has been described in which the coil 4 is formed on the high magnetic permeability thin film 2 via the insulating film 3. However, if the thin film 2 is formed of a material with high resistivity such as ferrite, the insulating film 3 The coil 4 may be formed directly on the thin film 2 without the need.

[発明の効果] 上述したように本発明によれば、半導体メモリを内蔵し
たカードに内蔵される基板の表面に、軟磁性材料よりな
る高透磁率の薄膜を形成し、この薄膜上にスパイラル状
の薄膜コイルを形成して薄膜電磁変換器を構成したので
、読み取り用再生へラドコアからの磁束の洩れは小さく
、従来のカード読み取り装置を使用しても効率よくカー
ドに内蔵されたメモリ中の゛清報を読み出すことができ
る。
[Effects of the Invention] As described above, according to the present invention, a thin film of high magnetic permeability made of a soft magnetic material is formed on the surface of a substrate built into a card with a built-in semiconductor memory, and a spiral shape is formed on this thin film. Since a thin film coil is formed to constitute a thin film electromagnetic transducer, the leakage of magnetic flux from the rad core to reading and reproducing is small, and even when using a conventional card reading device, the data in the memory built into the card can be efficiently read. You can read the latest news.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る薄膜電磁変換器の一実施例を示す
斜視図、第2図及び第3図は第1図に示す薄膜電磁変換
器の作用を示す模式図である。 1・・・カード状基板 2・・・軟磁性体簿膜 4・・・コイル 代理人 弁理士  則 近 憲 右 同  宇治 弘
FIG. 1 is a perspective view showing an embodiment of the thin film electromagnetic transducer according to the present invention, and FIGS. 2 and 3 are schematic diagrams showing the operation of the thin film electromagnetic converter shown in FIG. 1. 1... Card-shaped substrate 2... Soft magnetic material film 4... Coil agent Patent attorney Norihiro Chika Hiroshi Uji

Claims (1)

【特許請求の範囲】[Claims] 半導体メモリを内蔵したカードに内蔵される基板の表面
に軟磁性材料よりなる薄膜を形成し、この薄膜上にスパ
イラル状の薄膜コイルを形成したことを特徴とする薄膜
電磁変換器。
A thin film electromagnetic transducer characterized in that a thin film made of a soft magnetic material is formed on the surface of a substrate built into a card containing a semiconductor memory, and a spiral thin film coil is formed on this thin film.
JP61119311A 1986-05-26 1986-05-26 Thin-film electromagnetic converter Pending JPS62275790A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61119311A JPS62275790A (en) 1986-05-26 1986-05-26 Thin-film electromagnetic converter
US07/053,758 US4818853A (en) 1986-05-26 1987-05-26 Data card with inductive signal transfer device
DE8787304623T DE3771588D1 (en) 1986-05-26 1987-05-26 DATA CARD WITH INDUCTIVE SIGNAL TRANSMISSION DEVICE.
EP87304623A EP0249356B1 (en) 1986-05-26 1987-05-26 Data card with inductive signal transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61119311A JPS62275790A (en) 1986-05-26 1986-05-26 Thin-film electromagnetic converter

Publications (1)

Publication Number Publication Date
JPS62275790A true JPS62275790A (en) 1987-11-30

Family

ID=14758296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61119311A Pending JPS62275790A (en) 1986-05-26 1986-05-26 Thin-film electromagnetic converter

Country Status (1)

Country Link
JP (1) JPS62275790A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0390371U (en) * 1989-12-28 1991-09-13
JP2010025891A (en) * 2008-07-24 2010-02-04 Japan Aviation Electronics Industry Ltd Acceleration sensor and servo accelerometer
JP2014095742A (en) * 2012-11-07 2014-05-22 Toppan Forms Co Ltd Information display medium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176188A (en) * 1984-02-22 1985-09-10 Matsushita Electric Ind Co Ltd Semiconductor card
JPS60211582A (en) * 1984-04-06 1985-10-23 Nippon Telegr & Teleph Corp <Ntt> Ic card connecting system
JPS61283981A (en) * 1985-06-11 1986-12-13 Nippon Denzai Kogyo Kenkyusho:Kk Integrated circuit card

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176188A (en) * 1984-02-22 1985-09-10 Matsushita Electric Ind Co Ltd Semiconductor card
JPS60211582A (en) * 1984-04-06 1985-10-23 Nippon Telegr & Teleph Corp <Ntt> Ic card connecting system
JPS61283981A (en) * 1985-06-11 1986-12-13 Nippon Denzai Kogyo Kenkyusho:Kk Integrated circuit card

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0390371U (en) * 1989-12-28 1991-09-13
JP2010025891A (en) * 2008-07-24 2010-02-04 Japan Aviation Electronics Industry Ltd Acceleration sensor and servo accelerometer
JP2014095742A (en) * 2012-11-07 2014-05-22 Toppan Forms Co Ltd Information display medium

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