JPS62261133A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS62261133A JPS62261133A JP10387186A JP10387186A JPS62261133A JP S62261133 A JPS62261133 A JP S62261133A JP 10387186 A JP10387186 A JP 10387186A JP 10387186 A JP10387186 A JP 10387186A JP S62261133 A JPS62261133 A JP S62261133A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- sealing
- metal mold
- resin
- element mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000007789 sealing Methods 0.000 claims abstract description 48
- 239000011347 resin Substances 0.000 claims abstract description 18
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000696 magnetic material Substances 0.000 claims abstract description 7
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract 10
- 239000000463 material Substances 0.000 abstract 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体装置、特に放熱板を埋め込んだ樹脂封
止型半導体装置の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a semiconductor device, particularly a resin-sealed semiconductor device in which a heat sink is embedded.
（従来の技術）
従来の樹脂封止型半導体装置の＃！造方法を第１図ない
し第４図により説明する。(Prior art) # of conventional resin-sealed semiconductor devices! The manufacturing method will be explained with reference to FIGS. 1 to 4.
第１図は従来例及び本発明の一実施例の製造方法におけ
る封止工程終了後の状態を示す断面図、第２図は樹脂封
止型半導体装置の構造を示す断面図、第３図及び第４図
は従来の製造方法によって生じる不良例の構造を示す断
面図である。FIG. 1 is a cross-sectional view showing the state after the sealing process in the manufacturing method of a conventional example and an embodiment of the present invention, FIG. 2 is a cross-sectional view showing the structure of a resin-sealed semiconductor device, and FIG. FIG. 4 is a sectional view showing the structure of a defective example produced by the conventional manufacturing method.
第１図ないし第４図において、１は半導体素子（以下単
に素子という）載置板、２は素子、３は放熱板、４は封
止下金型、５は封止上金型、６は封止樹脂、７はボンデ
ィングワイヤ、８はリードフレームである。In Figures 1 to 4, 1 is a semiconductor element (hereinafter simply referred to as an element) mounting plate, 2 is an element, 3 is a heat sink, 4 is a lower mold for sealing, 5 is an upper mold for sealing, and 6 is a mold for sealing. A sealing resin, 7 a bonding wire, and 8 a lead frame.
従来の樹脂封止型半導体装置には、第２図に示すように
、素子載置板１の下に前記半導体装置の放熱特性の改善
のための放熱板３を設けて樹脂封止した構造の装置があ
る。前記半導体装置の製造方法を第１図により説明する
。その製造方法は。As shown in FIG. 2, a conventional resin-sealed semiconductor device has a structure in which a heat dissipation plate 3 is provided under an element mounting plate 1 to improve the heat dissipation characteristics of the semiconductor device, and the semiconductor device is sealed with a resin. There is a device. A method of manufacturing the semiconductor device will be explained with reference to FIG. How is it manufactured?
まず封止下金型４のキャビティ底部にアルミニウム、銅
等の熱の良導体からなる放熱板３を置き、素子載置板１
上に素子を載置し、必要な配線を終えたリードフレーム
８を封止下金型４上にセットし、封止上金型５で閉じた
後キャビティ内に封止樹脂６を注入し、樹脂の硬化を待
って金型を開き、リードフレーム８を取り出すという工
程から成っている。First, a heat dissipation plate 3 made of a good heat conductor such as aluminum or copper is placed at the bottom of the cavity of the lower sealing mold 4, and the element mounting plate 1
The lead frame 8 with the element mounted thereon and the necessary wiring completed is set on the lower sealing mold 4, and after closing with the upper sealing mold 5, a sealing resin 6 is injected into the cavity. The process consists of waiting for the resin to harden, opening the mold, and taking out the lead frame 8.
この場合、素子載置板１と放熱板３との密着は。In this case, the close contact between the element mounting plate 1 and the heat sink 3 is as follows.
素子載置板１を支持している吊りリードのスプリング力
だけに依存している。It relies only on the spring force of the hanging leads supporting the element mounting plate 1.
（発明が解決しようとする問題点）
上記のような従来の製造方法では、素子載置板１と放熱
板３との密着は、素子載置板１を支持している吊りリー
ドのスプリング力だけに依存しているため、封止樹脂注
入時には、第３図に示すように、素子載置板１と放熱板
３との間に封止樹脂６が流れ込んだまま成形されること
があり、また放熱板３は封止下金型４のキャビティ底部
に置かれているだけであるから、放熱板３は注入された
封止樹脂６の流れによってわずかに持ち上げられ。(Problems to be Solved by the Invention) In the conventional manufacturing method as described above, the close contact between the element mounting plate 1 and the heat sink 3 is achieved only by the spring force of the hanging lead supporting the element mounting plate 1. When the sealing resin is injected, the sealing resin 6 may flow between the element mounting plate 1 and the heat sink 3 during molding, as shown in FIG. Since the heat sink 3 is only placed on the bottom of the cavity of the lower sealing mold 4, the heat sink 3 is slightly lifted by the flow of the injected sealing resin 6.
第４図に示すように、放熱板３の底面と封止下金型４と
の間にも厚い樹脂部分がそのまま成形されることがある
。As shown in FIG. 4, a thick resin portion may also be directly molded between the bottom surface of the heat sink 3 and the lower sealing mold 4.
以上のような状態で封止されると、いずれの場合も放熱
板３による放熱特性の改善効果が十分に得られないとい
う問題点があった。When sealed in the above-mentioned state, there is a problem in that the effect of improving heat radiation characteristics by the heat sink 3 cannot be sufficiently obtained in any case.
本発明は、封止下金型と放熱板間及び放熱板と 。The present invention relates to a structure between the lower sealing mold and the heat sink, and between the heat sink and the heat sink.
素子載置板間を確実に密着させ、放熱改善効果のすぐれ
た樹脂封止型半導体装置を提供するものである。It is an object of the present invention to provide a resin-sealed semiconductor device in which element mounting plates are brought into close contact with each other and the heat radiation is improved.
（問題点を解決するための手段）
上記問題点を解決するために、本発明は封止下金型、放
熱板及び素子載置板に磁性材料を使用し、封止下金型と
放熱板間及び放熱板と素子載置板間を磁力によって確実
に密着させる構成を備えるものである。(Means for Solving the Problems) In order to solve the above problems, the present invention uses a magnetic material for the lower sealing mold, the heat sink, and the element mounting plate, and the lower sealing mold and the heat sink The heat dissipation plate and the element mounting plate are provided with a structure that securely brings the heat sink and the element mounting plate into close contact with each other by magnetic force.
（作 用）
上記構成により１本発明は、封止下金型と放熱板及び放
熱板と素子載置板が磁力により確実に密着するので、封
止樹脂注入の際にそれらの間に封止樹脂が封入されず、
従って放熱効果の一層すぐれた樹脂封止型半導体装置を
得ることができる。(Function) With the above configuration, the present invention allows the lower sealing mold and the heat sink, and the heat sink and the element mounting plate to be firmly attached to each other by magnetic force. Resin is not encapsulated,
Therefore, a resin-sealed semiconductor device with even better heat dissipation effect can be obtained.
（実施例）
本発明の一実施例を第１図により説明する。第１図は本
発明の一実施例の製造方法における封止工程終了後の状
態を示す断面図である。同図における番号及び部分名称
は、従来の技術の項で示したので省略する。(Example) An example of the present invention will be described with reference to FIG. FIG. 1 is a sectional view showing the state after the sealing step in the manufacturing method according to an embodiment of the present invention. The numbers and part names in the figure are omitted because they were shown in the section of the prior art.
素子載置板１．放熱板３及び封止下金型４は、いずれも
磁性体でつくられており、磁性体材料としては、素子載
置板１は例えばアロイ４２．コバールなどの鉄合金、放
熱板３は鋳鉄または鉄合金等。Element mounting plate 1. The heat dissipation plate 3 and the lower sealing mold 4 are both made of a magnetic material, and the element mounting plate 1 is made of, for example, alloy 42. Iron alloy such as Kovar, heat sink 3 is cast iron or iron alloy, etc.
封止下金型は例えば鉄合金等をそれぞれ使用すればよい
。The lower sealing mold may be made of, for example, an iron alloy.
本発明の一実施例による製造工程は、まず放熱板３を封
止下金型４のキャビティ底部に置き、放熱板３を磁力に
より封止下金型４に密着させる。In the manufacturing process according to an embodiment of the present invention, first, the heat sink 3 is placed on the bottom of the cavity of the lower sealing mold 4, and the heat sink 3 is brought into close contact with the lower sealing mold 4 by magnetic force.
次に素子２を載置した素子載置板１を放熱板３の上に載
せ磁力により両者を密着させ、素子２との間に必要な配
線を施したリードフレーム８を封止下金型４上にセット
する。この状態で封止下金型４の上に封止上金型５を載
せて金型を閉じ、キャビティ内に封止樹脂６を注入する
。その後樹脂の硬化を待って金型を開き、リードフレー
ム８を取り出すことにより完了する。なお、放熱板３は
封止工程後に消磁してもよい。Next, the element mounting plate 1 on which the element 2 is placed is placed on the heat sink 3 and brought into close contact with each other by magnetic force. set on top. In this state, the upper sealing mold 5 is placed on the lower sealing mold 4, the mold is closed, and the sealing resin 6 is injected into the cavity. Thereafter, wait for the resin to harden, open the mold, and take out the lead frame 8 to complete the process. Note that the heat sink 3 may be demagnetized after the sealing process.
（発明の効果）
本発明によれば、放熱板が封止下金型及び素子載置板の
それぞれと磁力により確実に密着するので、封止下金型
と放熱板との間、及び放熱板と素子載置板との間に封止
樹脂が入り込んだまま成形されることがなく、放熱効果
の一層すぐれた樹脂封止型半導体装置を得ることができ
る。(Effects of the Invention) According to the present invention, since the heat sink reliably comes into close contact with each of the lower sealing mold and the element mounting plate by magnetic force, the space between the lower sealing mold and the heat sink and the heat sink The resin-sealed semiconductor device is not molded with the sealing resin trapped between the device mounting plate and the device mounting plate, and a resin-sealed semiconductor device with even better heat dissipation effect can be obtained.
第１図は従来例及び本発明の一実施例の製造方法におけ
る封止工程終了後の状態を示す断面図、第２図は樹脂封
止型半導体装置の構造を示す断面図、第ご３図及び第４
図は従来の製造方法によって生じる不良例の構造を示す
断面図である。
１・・・素子載置板、 ２・・・素子、 ３・・放熱板
、 ４・・・封止下金型、 ５・・・封止止金型。
６・・・封止樹脂、 ７・・・ボンディングワイヤ、８
・・・リードフレーム。
特許出願人 松下電子工業株式会社
第１図
１・・・釆３載夏厭
２・・・ １）
３・・・ 扱慨榎
４・・・ 鮪ヱ千傘型
５・・・封上丘＆莞
６・・・貝ＬｘＩ殉
７・・・ 不゛ンデ゛′４ングワ秋
８・・・ リードフレーム
第３図
第４図FIG. 1 is a cross-sectional view showing the state after the sealing process in the manufacturing method of a conventional example and an embodiment of the present invention, FIG. 2 is a cross-sectional view showing the structure of a resin-sealed semiconductor device, and FIG. and fourth
The figure is a cross-sectional view showing the structure of a defective example produced by a conventional manufacturing method. DESCRIPTION OF SYMBOLS 1... Element mounting plate, 2... Element, 3... Heat sink, 4... Lower sealing mold, 5... Sealing mold. 6... Sealing resin, 7... Bonding wire, 8
···Lead frame. Patent Applicant: Matsushita Electronics Co., Ltd. Figure 1 1... Button 3 - Summer 2... 1) 3... Handling details 4... Tuna Echigasa type 5... Fujo Hill & Guan 6...Shell LxI death 7... End'4 Nguwa Autumn 8... Lead frame Figure 3 Figure 4
Claims (1)
磁性材料より成る放熱板を置き、前記放熱板上に同じく
磁性材料より成る素子載置板を載せる工程と、前記素子
載置板上に半導体素子を載置し、前記半導体素子の端子
との間に内部配線を行ったリードフレームを前記封止下
金型にセットする工程と、封止上金型と前記封止下金型
とを密着後、前記封止上下金型により形成されたキャビ
ティ内に封止樹脂を注入する工程と、前記封止樹脂の熱
硬化後、前記封止上下金型を開き前記リードフレームを
取り出す工程とから成ることを特徴とする半導体装置の
製造方法。A step of placing a heat sink made of a magnetized magnetic material on the bottom of a sealed lower mold cavity made of a magnetic material, placing an element mounting plate also made of a magnetic material on the heat sink, and placing a semiconductor on the element mounting plate. A step of setting a lead frame on which an element is mounted and internal wiring is performed between the terminals of the semiconductor element in the lower sealing mold, and tightly bonding the upper sealing mold and the lower sealing mold. Thereafter, the method comprises the steps of injecting a sealing resin into the cavity formed by the upper and lower sealing molds, and after the sealing resin is thermally hardened, opening the upper and lower sealing molds and taking out the lead frame. A method for manufacturing a semiconductor device, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10387186A JPS62261133A (en) | 1986-05-08 | 1986-05-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10387186A JPS62261133A (en) | 1986-05-08 | 1986-05-08 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62261133A true JPS62261133A (en) | 1987-11-13 |
Family
ID=14365499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10387186A Pending JPS62261133A (en) | 1986-05-08 | 1986-05-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62261133A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5959349A (en) * | 1997-02-25 | 1999-09-28 | Micron Technology, Inc. | Transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6117797A (en) * | 1998-09-03 | 2000-09-12 | Micron Technology, Inc. | Attachment method for heat sinks and devices involving removal of misplaced encapsulant |
| US6297960B1 (en) | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Heat sink with alignment and retaining features |
| US6297548B1 (en) | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
| US6444501B1 (en) | 2001-06-12 | 2002-09-03 | Micron Technology, Inc. | Two stage transfer molding method to encapsulate MMC module |
| WO2006122125A2 (en) * | 2005-05-10 | 2006-11-16 | Texas Instruments Incorporated | Magnetic assist manufacturing to reduce mold flash and assist with heat slug assembly |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150242A (en) * | 1979-05-11 | 1980-11-22 | Nec Corp | Manufacture of semiconductor device |
-
1986
- 1986-05-08 JP JP10387186A patent/JPS62261133A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150242A (en) * | 1979-05-11 | 1980-11-22 | Nec Corp | Manufacture of semiconductor device |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6373132B2 (en) | 1997-02-25 | 2002-04-16 | Micron Technology, Inc. | Semiconductor die with attached heat sink and transfer mold |
| US6001672A (en) * | 1997-02-25 | 1999-12-14 | Micron Technology, Inc. | Method for transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6869811B2 (en) | 1997-02-25 | 2005-03-22 | Micron Technology, Inc. | Methods for transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6583504B2 (en) | 1997-02-25 | 2003-06-24 | Micron Technology, Inc. | Semiconductor die with attached heat sink and transfer mold |
| US6249050B1 (en) | 1997-02-25 | 2001-06-19 | Micron Technology, Inc. | Encapsulated transfer molding of a semiconductor die with attached heat sink |
| US5959349A (en) * | 1997-02-25 | 1999-09-28 | Micron Technology, Inc. | Transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6403387B1 (en) | 1997-02-25 | 2002-06-11 | Micron Technology | Method and apparatus for transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6525943B2 (en) | 1998-06-30 | 2003-02-25 | Micron Technology, Inc. | Heat sink with alignment and retaining features |
| US6858926B2 (en) | 1998-06-30 | 2005-02-22 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
| US7285442B2 (en) | 1998-06-30 | 2007-10-23 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
| US6297548B1 (en) | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
| US6760224B2 (en) | 1998-06-30 | 2004-07-06 | Micron Technology, Inc. | Heat sink with alignment and retaining features |
| US6297960B1 (en) | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Heat sink with alignment and retaining features |
| US6650007B2 (en) | 1998-06-30 | 2003-11-18 | Micron Technology, Inc. | Stackable ceramic fbga for high thermal applications |
| US6806567B2 (en) | 1998-09-03 | 2004-10-19 | Micron Technology, Inc. | Chip on board with heat sink attachment and assembly |
| US6432840B1 (en) | 1998-09-03 | 2002-08-13 | Micron Technology, Inc. | Methodology of removing misplaced encapsulant for attachment of heat sinks in a chip on board package |
| US6117797A (en) * | 1998-09-03 | 2000-09-12 | Micron Technology, Inc. | Attachment method for heat sinks and devices involving removal of misplaced encapsulant |
| US6451709B1 (en) | 1998-09-03 | 2002-09-17 | Micron Technology, Inc. | Methodology of removing misplaced encapsulant for attachment of heat sinks in a chip on board package |
| US6229204B1 (en) | 1998-09-03 | 2001-05-08 | Micron Technology, Inc. | Chip on board with heat sink attachment |
| US6444501B1 (en) | 2001-06-12 | 2002-09-03 | Micron Technology, Inc. | Two stage transfer molding method to encapsulate MMC module |
| US6764882B2 (en) | 2001-06-12 | 2004-07-20 | Micron Technology, Inc. | Two-stage transfer molding method to encapsulate MMC module |
| US6730995B2 (en) | 2001-06-12 | 2004-05-04 | Micron Technology, Inc. | Two-stage transfer molding device to encapsulate MMC module |
| US7279781B2 (en) | 2001-06-12 | 2007-10-09 | Micron Technology, Inc. | Two-stage transfer molding device to encapsulate MMC module |
| US6538311B2 (en) | 2001-06-12 | 2003-03-25 | Micron Technology, Inc. | Two-stage transfer molding method to encapsulate MMC module |
| US7288441B2 (en) | 2001-06-12 | 2007-10-30 | Micron Technology, Inc. | Method for two-stage transfer molding device to encapsulate MMC module |
| WO2006122125A2 (en) * | 2005-05-10 | 2006-11-16 | Texas Instruments Incorporated | Magnetic assist manufacturing to reduce mold flash and assist with heat slug assembly |
| WO2006122125A3 (en) * | 2005-05-10 | 2009-04-23 | Texas Instruments Inc | Magnetic assist manufacturing to reduce mold flash and assist with heat slug assembly |
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