JPS6225903Y2 - - Google Patents

Description

[Detailed Description of the Invention] The present invention relates to a semiconductor device, and particularly to the structure of a DHD type glass-sealed two-terminal element.

Figure 1 shows a conventional DHD (Double Heatsink Diode) type semiconductor device. In Figure 1, Ag
A semiconductor pellet 1 with an electrode 2 raised by a metal terminal (for example, tungsten,
Alternatively, by heating and fusing the inner wall of the glass sleeve 3 to the composite wires 4 and 5, the semiconductor pellet 1 can be hermetically sealed. Also, the external leads 6 and 7 are connected to the metal terminals 4 and 5.
Pre-welded with _P wire (steel clad iron/nickel wire) or zirconium steel wire.

After the above-mentioned sealing and assembly, both leads are soldered, electrically characterized, painted, and stamped to complete the process.

However, a semiconductor device having such a structure has the following problems.

1. During the manufacturing process, the external leads 6 and 7 are present from the time of input, which increases the size of the encapsulation jig and manufacturing equipment, and causes bending of the leads.When introducing automated equipment, the operating rate decreases and the mechanical design becomes complicated. , indexing becomes slower.

2. As mentioned above, as a countermeasure, a wire drawing process is added between each process, but the lead bending strength decreases and the reliability of the device decreases.

3 When fusing the glass sleeve 3 and the metal terminals 4 and 5, it is heated at 600 to 900°C, so after encapsulation, treatments such as solder plating and nickel or tin plating must be applied to improve solder resistance. As a result, enormous costs are incurred in dealing with pollution.

By eliminating the above drawbacks, simplifying the manufacturing method, making it cheaper and improving reliability,
As shown in FIG. 2, a method can be considered in which a metal electrode facebonding element is formed and then a solder-plated conductive wire is welded. The manufacturing method will be explained with reference to FIG.

First, a convex metal terminal (for example, a composite wire) 8 is inserted into a carbon enclosure jig, and then a glass sleeve 9 is assembled. At this time, the glass sleeve 9 is placed on the circumferential surface of the convex top of the metal terminal. Next, the semiconductor pellet 1 is inserted into the glass sleeve. The semiconductor pellet 1 is placed on the top of the central portion of the convex metal terminal 8 using the inner wall of the glass sleeve 9 as a guide. Next, a convex metal terminal 10 is placed on one electrode of the semiconductor pellet 1. When the carbon encapsulation jig that has been assembled in the above manner is melted in a melting furnace at a temperature of 650 to 750°C, the glass sleeve 9 is melted.
By being fused to the convex metal terminals 8 and 10, the semiconductor pellet 1 is completely hermetically sealed within the glass sleeve. After selecting the electrical characteristics, a metal cap 11 formed by pressing a plate made of yellow steel or iron with nickel or tin plating (2 to 5μ) is fitted onto the base of the convex metal terminals 8 and 10. Then, a solder-plated steel wire or a solder-plated C _P wire is welded to the center of the top of the metal cap 11 and cut to a predetermined length to form the external lead 12.
After that, it is completed by painting and stamping. According to this manufacturing method, the above-mentioned drawbacks are eliminated, but the biggest drawback is the convex metal terminal 8 of the encapsulated element.
Moreover, when fitting the metal cap 11 to the base of the glass sleeve 9, a pressure of 30 to 40 kg/cm is applied, causing the glass sleeve 9 to break. Unless this drawback is resolved, it will be impossible to take out leads from the MELF structure element.

The present invention is a means for reducing the pressure during capping and realizing the above production method.

The present invention provides a semiconductor device in which both main surfaces of a semiconductor pellet having protruding metal electrodes are respectively connected to metal terminals, wherein the metal terminal has a convex cross-sectional shape, and the semiconductor pellet has a convex cross-sectional shape. The metal electrode portion is sealed with glass while being pressed against the top surface of the convex shape, and a cap having at least one slit made of conductive metal is fixed to the base of the convex shape. is a semiconductor device characterized in that a solder-plated conductive wire is connected thereto.

One embodiment of the present invention will be explained with reference to FIG. The external appearance is similar to the previous metal cap 11, and a slit 13 with a width of 0.1 to 0.2 is provided diagonally to reduce the pressure applied to the element. If the dimensional difference between the convex metal terminal 8 or 10 and the base of the metal cap 10 is ±0.05 mm, two to
With four slits, the pressure is halved and the glass sleeve 9 will not be damaged, but if there are four or more slits, the glass sleeve will not be damaged, but the fitting force will be weaker than the lead cutting strength, and the cap will not come off in actual use. Accidents may occur and become a problem.

Note that the same effect can be obtained even if the slit is placed in a V-shape or a Λ-shape.

Without damaging the glass sleeve 9,
If welding becomes possible, the first and second drawbacks of the prior art described above can be overcome, since the encapsulation, sorting, and processes can proceed without leads, and troubles due to lead bending will not occur. In addition, since there is no lead, the transfer speed due to the small size is faster, and the indexing speed is faster due to the larger width, which reduces the number of man-hours. Additionally, equipment can be made smaller and simpler, storage space can be reduced, and reliability can be improved. Furthermore, the third drawback of the prior art described above is that
Only good products after sorting can be fitted with caps welded in advance using solder-plated wire to the metal cap 11, or solder-plated leads can be welded to the metal cap 11 after fitting and fixing. On the semiconductor manufacturer side, the solder plating process or the tin or nickel plating process can be omitted, the cost of pollution treatment facilities, etc. is not required, and the production schedule can be shortened.

As described above, the present invention eliminates the drawbacks of the conventional products, simplifies the manufacturing method, downsizes the equipment, and provides a DHD type semiconductor device that is inexpensive and has improved reliability.

[Brief explanation of the drawing]

FIGS. 1 and 2 are cross-sectional views showing conventional semiconductor devices, respectively. FIG. 3 is a perspective view showing a cap used in one embodiment of the present invention. In the figure, 1 is a semiconductor pellet, 2 is a raised electrode, 3, 9 is a glass sleeve, 4, 5,
8 and 10 are metal terminals, 6, 7, and 12 are external lead wires, 11 is a metal cap, and 13 is a slit.

Claims (1)

[Scope of utility model registration request] In a semiconductor device in which both main surfaces of a semiconductor pellet having protruding metal electrodes are connected to metal terminals, the metal terminal has a convex cross-sectional shape, and the metal electrode portion of the semiconductor pellet has a convex cross-section. It is sealed with glass while being pressed against the top surface of the convex shape, and at least one conductive metal is placed on the side surface of the base of the convex shape.
What is claimed is: 1. A semiconductor device comprising: a cap provided with at least two slits; and an external lead connected to the cap.