JPS6218048Y2 - - Google Patents

Description

[Detailed Description of the Invention] The present invention relates to an airtight container for semiconductors, and particularly to a heat-resistant structure for a semiconductor container that requires heat dissipation.

Generally, when insulating and sealing metal terminals, glass is often used. In this case, the surrounding glass sealing metals are roughly divided into two types: those with an expansion coefficient close to that of the glass and good wettability, and those that act as compression. These are joined to the radiator substrate through a simple cushioning material by brazing or welding, but the difference in thermal expansion during soldering or heating during soldering for semiconductor towers causes the glass seal to is stressed, often resulting in poor airtightness,
There were major problems such as cracks.

FIG. 1 shows an example of this, and when the semiconductor 7 is soldered to the heat dissipation base metal 6, the base metal 6 is deformed into a bimetallic shape due to the difference in thermal expansion between the glass sealing metal 3 and the heat dissipation base metal 6. In many cases, the stress may not be alleviated by the buffer member 5.

The present invention was made to solve these problems, and the purpose of the present invention is to provide a semiconductor container that can achieve high reliability by alleviating the stress that leads to poor airtightness in the glass part due to heat. An object of the present invention is to provide a new structure or shape of a buffer section.

The above-mentioned object of the present invention is to provide a glass-sealed metal in which lead wires are hermetically insulated and sealed through glass, a heat dissipation substrate metal, and an outer surface that is joined to the lower surface of the glass-sealed metal by brazing or welding. The inner flange has a flange, and has a hole approximately in the center that fits into the protrusion of the substrate metal, and also includes an inner flange joined to the shoulder surface of the substrate metal by brazing or welding. This is achieved by an airtight container for a semiconductor, comprising: a buffer member having one or more step portions formed between the outer flange portion and the outer flange portion.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

Figure 2 shows the first part of the buffer member, which is the main part of the present invention.
FIG. 2 is a cross-sectional view showing a configuration example. In the figure, reference numeral 15 indicates a buffer member having an outer circumferential shape substantially similar to that of the glass sealing metal 3, and a convex portion ₆₁ including a semiconductor mounting portion of the heat dissipating substrate metal 6 is provided at the center of the buffer member. A hole ₁₅₁ for fitting is provided, and a stepped portion ₁₅₂ is formed at the periphery of the buffer member 15.

₁₅₃ is an inner flange, and ₁₅₄ is an outer flange. In this configuration example, the stepped portion ₁₅₂ has two steps, but this step may also be one step.

FIG. 4 is a sectional view showing an embodiment of the airtight semiconductor container according to the present invention, in which the buffer member 15 shown in FIG. 2 is interposed between the heat dissipation base metal 6 and the glass sealing metal 3. be. In the figure, the buffer member 1
5 is mounted on the heat dissipation substrate metal 6 by fitting the hole 15 1 into the protrusion 6 ₁ , and the lower surface of the inner flange _{15 3 of} the buffer member has the protrusion 6 of the substrate metal.
₁ , and glass-sealed metal 3 on the upper surface of the outer surface.
The lower surfaces of each are joined by brazing or welding.

When heat is generated during soldering or welding of a container having the structure shown in FIG. 4, stress is generated due to the difference in thermal expansion between the glass sealing metal 3 and the substrate metal 6. Although it tries to deform as shown in the figure, the transmission of the stress is absorbed by the two-step difference in the buffer member 15, reducing the influence on the glass sealing metal 3. In other words, the two different types of The large force generated between the metals is offset by the deformation of the stepped portion ₁₅₂ .

Figure 3 shows the second part of the buffer member, which is the main part of the present invention.
FIG. 2 is a cross-sectional view showing a configuration example. This configuration example is an example in which the two-step stepped portion of the configuration example shown in FIG. 2 is changed to three steps. A semiconductor container similar to that shown in FIG. 4 can be formed using a buffer member having this configuration, and this is referred to as a second embodiment. It goes without saying that the third and fourth embodiments can be constructed in the same manner by using four or more step portions ₁₅₂ , and these embodiments are similar to or more than the first embodiment. It is clear that the effect of

By forming the buffer member into the structure or shape as described above, a highly airtight semiconductor container with excellent heat resistance and no damage such as glass cracks can be obtained. Furthermore, it is extremely strong against mechanical shock and has improved reliability.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view showing an example of a conventional semiconductor container, FIG. 2 is a cross-sectional view showing a first configuration example of a buffer member, which is the main part of the present invention, and FIG. FIG. 4 is a cross-sectional view showing an example of the structure of the semiconductor container according to the present invention, and FIG. 5 is a cross-sectional view showing an example of a deformed state of the buffer member according to the present invention. 1...Lead wire, 2...Glass sealing part, 3...
Glass-sealed metal, 4... Brazed part (welded part), 5
... Buffer member, 6 ... Heat dissipation substrate metal, 7 ... Semiconductor (substrate), 8 ... Brazing part, 15 ... Buffer member, 15 ₁ ... Hole, 15 ₂ ... Step part, 15 ₃
...Inner collar, 15 ₄ ...Outer collar.

Claims (1)

[Scope of utility model registration request] A glass-sealed metal in which lead wires are hermetically insulated and sealed through glass, a heat-dissipating substrate metal, and an outer flange joined to the glass-sealed metal by brazing or welding, and approximately at the center thereof. a hole that fits into a convex portion of the substrate metal, and an inner flange portion joined to the substrate metal by brazing or welding, and one or more flange portions are provided between the inner flange portion and the outer flange portion. What is claimed is: 1. An airtight container for semiconductors, comprising: a buffer member having individual stepped portions.