JPS62175739A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS62175739A JPS62175739A JP61016834A JP1683486A JPS62175739A JP S62175739 A JPS62175739 A JP S62175739A JP 61016834 A JP61016834 A JP 61016834A JP 1683486 A JP1683486 A JP 1683486A JP S62175739 A JPS62175739 A JP S62175739A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- development
- resist pattern
- pattern
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 29
- 229920001577 copolymer Polymers 0.000 claims abstract description 9
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 22
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 abstract description 9
- 239000002904 solvent Substances 0.000 abstract description 7
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 abstract description 5
- -1 alkyl acetate Chemical compound 0.000 abstract description 4
- 229920000642 polymer Polymers 0.000 abstract 5
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 4
- 239000005022 packaging material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229940117955 isoamyl acetate Drugs 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 2
- 229940011051 isopropyl acetate Drugs 0.000 description 2
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
- G03C5/18—Diazo-type processes, e.g. thermal development, or agents therefor
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＰＩｖＩＭＡ （ポリメチルメタクリレート）
もしくはメチルメタクリレート共重合体からなるポジ型
レジストのパターン形成方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to PIvIMA (polymethyl methacrylate)
Alternatively, the present invention relates to a method for forming a pattern of a positive resist made of a methyl methacrylate copolymer.
半導体技術の仏参とともに超郁工をはじめ半導体装置の
高巣Ｍ度化、高密度化が進められている。Along with the breakthrough in semiconductor technology, advances are being made in semiconductor devices, including ultra-high-density technology, to increase the density and density of semiconductor devices.
これに伴ない微細０１］エプロセス技術の分野では、高
精度のサブミクロンパターン形成技術が要求されている
。サブミクロンパターンのηロエに際してはドライエツ
チング技術は必須であり、ドライエツチング時のマスク
となるレジストパターンとしては高い加工寸法精度を確
保する、つまりパターン変換差を極力小さくするという
観点からアスペクト比（レジスト膜厚／レジストパター
ン線＠）の高いものが要求される。Along with this, in the field of microprocessing technology, highly accurate submicron pattern forming technology is required. Dry etching technology is indispensable for η-loe of submicron patterns, and the aspect ratio (resist A high film thickness/resist pattern line @) is required.
アスペクト比の高いレジストパターンを形成するために
は、一般に解像性の高いレジストパターンと高コントラ
スト、即ち放射線照射部と非照射部におけるレジスト膜
の溶解度の差が大きい現像処理が必要である。サブミク
ロン寸法のパターン形成用の代表的な高解像性レジスト
としてメチルメタクリレート系の例えばＰ■晶、（ポリ
メチルメチクリレート）がある。In order to form a resist pattern with a high aspect ratio, it is generally necessary to develop a resist pattern with high resolution and high contrast, that is, with a large difference in solubility of the resist film between radiation irradiated areas and non-irradiated areas. As a typical high-resolution resist for forming submicron-sized patterns, there is a methyl methacrylate-based resist such as P-crystal (polymethyl methacrylate).
このＰ〜獣の現像処理にはＭＩＢＫ （メチルイソブチ
ルケトン）ｔ−はじめ種々の溶媒があるが、それらのう
ち高いコントラストが得られる現Ｉ′＃液とじて従来か
らＩＡＡ （酢酸イノアミル）が用いられてきた。Various solvents including MIBK (methyl isobutyl ketone) t- are used for this P ~ beast development process, but among these, IAA (inoamyl acetate) has traditionally been used as the current I'# solution, which provides high contrast. It's here.
前記ＩＡＡ現像によりある程度の解像性と高コントラス
トをもつレジストパターンが形成できるものの、工緑現
像法はＩＡＡが讃臥に対し貧溶媒であるため現像時間が
長くかかり過ぎる欠点を有していた。Although a resist pattern with a certain degree of resolution and high contrast can be formed by the IAA development, the green development method has the disadvantage that the development time is too long because IAA is a poor solvent.
例えば加速電圧５０ＫＶ１１ｆ子線を照射ｔ５０μＣβ
ｒｃ テハｐ−ン描画した１μｍ厚のＰＭＭＡレジスト
膜をＩＡＡで現像する場合、描画寸法通りの現像パター
ンを得るには、現像温度２４℃で約７０分の現像時間を
要していた。For example, irradiation with accelerating voltage 50KV11f consonant beamt50μCβ
When a 1 μm thick PMMA resist film drawn using an rc technique is developed with IAA, about 70 minutes of development time at a development temperature of 24° C. is required to obtain a developed pattern with the drawn dimensions.
ざらにこのＩＡＡ現像法による長時間現像ではスペース
幅つまり、形成されるレジスト間の距離が０．２５μｍ
以ドの領域になると隣接パターン上部が膨潤し解像性低
下の原因となっていた。このためＰＭＭＡレジストに対
しＩＡＡ溶媒を用いた現像方法は実用的でなかった。In long-term development using this IAA development method, the space width, that is, the distance between the formed resists, is 0.25 μm.
In the following areas, the upper part of the adjacent pattern swells, causing a decrease in resolution. For this reason, the development method using IAA solvent for PMMA resist was not practical.
本発明は上述したメチルメタクリレート系レジストのパ
ターン形成方法を改良したものであり。The present invention is an improvement on the above-mentioned method for forming a pattern using a methyl methacrylate resist.
高コントラストですべての領域において解像性の良好な
Ｐ、ν翫しジストパターンを短時間で現像成形すること
ができる新規なレジストパターン形成方法を提供するこ
とを目的とする。It is an object of the present invention to provide a novel resist pattern forming method that can develop and form a P, ν resist pattern with high contrast and good resolution in all areas in a short time.
上記目的を達成するためＶＣ１本発明においては基板上
にポリメチルメタクリレート（ＰＭＭＡ）もしくはメチ
ルメタクリレート共重合体からなるレジスト膜を形成し
た後、所定波長の電磁波或いは所定エネルギの粒子線を
前記ポリメチルメタクリレートもしくはメチルメタクリ
レート共重合体に選択的に照射し現像処理して、前記ポ
リメチルメタクリレートもしくはメタクリレート共重合
体のレジストパターンを形成するに除し、前記現像処理
用の溶媒としてＣＨ３ＣＯ０ＣＨＨ２１＋ｔ （ｎ≦４
）を用いることを特徴とするパターン形成方法を提供す
る。In order to achieve the above object, in the present invention, a resist film made of polymethyl methacrylate (PMMA) or a methyl methacrylate copolymer is formed on a substrate, and then electromagnetic waves of a predetermined wavelength or particle beams of a predetermined energy are applied to the polymethyl methacrylate. Alternatively, the methyl methacrylate copolymer is selectively irradiated and developed to form a resist pattern of the polymethyl methacrylate or methacrylate copolymer, and CH3CO0CHH21+t (n≦4) is used as the solvent for the development process.
) is provided.
ポリメチルメタクリレート（ＰｉｖｔＭＡ ）ポジ型レ
ジストに酢酸イソアミル（ＩＡＡ）を溶媒として現像処
理した場合の現像時間は、酢酸イソアミル（ＩＡＡ）中
のアルキル基Ｃ３Ｈ１１’のＣ１つまりカーボン数によ
ると考えられる。The development time when a polymethyl methacrylate (PivtMA) positive resist is developed using isoamyl acetate (IAA) as a solvent is considered to depend on C1, that is, the number of carbon atoms of the alkyl group C3H11' in isoamyl acetate (IAA).
例えば酢酸イソアミルＣＩＡＡ）よりもカーボン数の少
ないアルキル基Ｃ３Ｈ７’をもつ酢酸イングロビル（Ｃ
Ｈ３ＣＯＯＣ３Ｅ（７）は、ポリメチルメタクリレート
（Ｐ感情）に対して溶解度は大きい。For example, inglovir acetate (C
H3COOC3E (7) has a high solubility in polymethyl methacrylate (P-emotion).
この溶解間が現像時間に影響を与え、溶解度が大きけれ
ば現像時間に影響を与え、溶解度が大きければ現像時間
が短かくてすむと考えられる。それ故、ポリメチルメタ
クリレートＣＰｔｖＭυに対しては酢酸イソアミルＣＩ
ＡＡ）より酢酸イソプロピルの方が現像時間は短かいと
考えられる。It is thought that this dissolution time affects the development time, and if the solubility is high, the development time is affected, and if the solubility is high, the development time is considered to be short. Therefore, for polymethyl methacrylate CPtvMυ, isoamyl acetate CI
It is thought that the development time is shorter for isopropyl acetate than for AA).
〔笑１１例〕
本発明の一実施例を図面を用いて説明する。第１図は多
層（３ＩＦ！ ）レジストの最上層にＰ４仏レジストを
用いた場合のレジストパターンの形成工程を示す断面図
である。[Example 11] An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing the process of forming a resist pattern when a P4 resist is used as the uppermost layer of a multilayer (3IF!) resist.
まず、蓼板（１）として被ａｎ工膜（２）（例えばＡＩ
。First, the membrane to be treated (2) (for example, AI
.
Ｐｏ１ｙ−８ｉ等）を被着したシリコン・ウェハ（８）
を用い（第１図（ａ） ） 、前記破加工膜（２）上に
下層有機膜（３）となるフォトレジスト（例えばハント
社Ｗ ＨＰＲ２０４）膜を１．５１Ａｍの厚さに塗布す
る（ＷＪ１図（ｂ））。Silicon wafer (8) coated with
(FIG. 1(a)), a photoresist (for example, Hunt's W HPR204) film, which will become the lower organic film (3), is applied to a thickness of 1.51 Am on the fractured film (2) (WJ1). Figure (b)).
次にそれを２００℃で１時間加熱処理し更に第１図（Ｃ
）のｙ口く中間層（４）としてスピン塗布の可能なポリ
シロキサンをフォトレジスト膜（３）上に０．３μｍの
厚さに塗布し、２００℃で加熱処理する。次いで第１図
（ｂ）の如く中間１４（４）膜上に最上層としてポジ型
のｐｍ ′邂子線レジスト（５）を１μｍ（Ｄ膜厚に塗
布し。Next, it was heat-treated at 200°C for 1 hour and further shown in Figure 1 (C
) Polysiloxane, which can be spin-coated, is applied to a thickness of 0.3 μm on the photoresist film (3) as an intermediate layer (4), and heat-treated at 200°C. Next, as shown in FIG. 1(b), a positive type pm' Oshi wire resist (5) was applied as the top layer on the intermediate 14 (4) film to a thickness of 1 μm (D film thickness).
１８０℃の窒累ガス雰囲気（６）中でＩＦ！＃間加熱＠
珪する。IF in a nitrogen gas atmosphere (6) at 180°C! ＃Heating for a while @
to slit.
以上のように形成した多層レジストにおいて電子線描画
装置を用いてＰＭ：ｄＡレジスト１５）に次の条件ＶＣ
て所定のパターンを４光する。つまり、加速電圧５０Ｋ
Ｖ、照射破５０μＣ／ｃＩｆｔにてサブミクロン寸法の
パターン描画を行なう。In the multilayer resist formed as described above, the PM:dA resist 15) was subjected to the following conditions VC using an electron beam lithography system.
and emit four lights in a predetermined pattern. In other words, the acceleration voltage is 50K
Patterns with submicron dimensions are drawn at an irradiation rate of 50 μC/cIft.
次にパターン描画済みのＰＭｉＶＩＡ 嗅ｆ５）を液温
２５℃に保持された酢酸イソプロピル溶液中へ浸ｉｔし
現像処理を行なう。この現像処理によって得られるサブ
ミクロン寸法（ライン幅／スペース幅＝０．５μｍ７０
．５μｍ）のレジストパターンの現像ｖｃ’ａ’Ｌた時
間は約６分であり、従来の酢酸イソアミン（ＩＡＡ）を
用いた現像処理時間、約７０分に比べ１／１０以下の処
理時間であった。ここで、ライン幅とは形成されたレジ
ストの幅であった。また、従来のＩＡＡ現像法によって
得られるレジスト膜くターンと同様に高コントラストの
サブミクロンレジストパターンが形成された。Next, the pattern-drawn PMiVIA f5) is immersed in an isopropyl acetate solution maintained at a temperature of 25° C. for development. Submicron dimensions (line width/space width = 0.5 μm70
．． The development time for a resist pattern (5 μm) was about 6 minutes, which was less than 1/10 of the conventional development time using isoamine acetate (IAA), which was about 70 minutes. . Here, the line width was the width of the formed resist. Furthermore, a submicron resist pattern with high contrast was formed, similar to the resist film pattern obtained by the conventional IAA development method.
父１本発明のパターン形成方法によれば、ライン幅／ス
ペース幅＝０．５μｍ／ ０．２５μｍの場合従来のＩ
ＡＡ現像法によって形成され九ノ（ターンに見られる膨
潤を抑制することができ解像性の良好なレジストパター
ンを形成することが可能となった。Father 1 According to the pattern forming method of the present invention, when line width/space width = 0.5 μm/0.25 μm, conventional I
Formed by the AA development method, it has become possible to suppress the swelling seen in 9-turns and to form a resist pattern with good resolution.
次Ｖｃ本発明のパターン形成方法を用いて得られるＰＭ
ＭＡの感度特性について以下述べる。PM obtained using the pattern forming method of the present invention
The sensitivity characteristics of MA will be described below.
上述した実施例と同じ工程（第１図（ａ）〜（Ｃ））で
形成された多層レジスト膜上のＰＭＭＡへ加速電圧５０
Ｋｖ（Ｄ′＃Ｌ子線ｔ １〜２００．ｃｇｃ／ｍ）範囲
（１） 照射量で照射する。次いで温度設定２５℃の酢
酸イングロビル現像液中にそれぞれ４分及び６分浸漬し
た現像処理を行なう。この結果得られたＰＭＭＡレジス
トの感虻特性（現像後の残存膜厚対電子線照射侍）を＠
２図に示す。ここでγ値（コントラスト指標：特性曲線
の勾配に相当するものでこの１直が大きいものほどコン
トラストは高い）は夫々２．２ 、１．９となった。比
較のために、上記と同様の条件で描画したＰＭ、ＶＩＡ
膜に従来のＩＡＡ現像を施して得られる感度特性を第３
図に示す。この場合、コントラスト指標は夫々２．２
、１．９である。又、２図及び３図の横軸は電子線照射
量、縦軸は残存レジスト膜厚である。Acceleration voltage of 50
Irradiate at a dose of Kv (D'#L sagittal t 1 to 200.cgc/m) range (1). Next, development treatment is performed by immersing the film in an inglovir acetate developer at a temperature of 25° C. for 4 minutes and 6 minutes, respectively. The sensitivity characteristics (residual film thickness after development vs. electron beam irradiation) of the PMMA resist obtained as a result are @
Shown in Figure 2. Here, the γ value (contrast index: corresponds to the slope of the characteristic curve, and the larger the linear value, the higher the contrast) was 2.2 and 1.9, respectively. For comparison, PM and VIA drawn under the same conditions as above.
The sensitivity characteristics obtained by applying conventional IAA development to the film are shown in the third section.
As shown in the figure. In this case, the contrast index is 2.2, respectively.
, 1.9. In addition, in FIGS. 2 and 3, the horizontal axis represents the electron beam irradiation amount, and the vertical axis represents the remaining resist film thickness.
上記２つの特性図を比較すると、膜減りの状態は、実用
的には全く無視できる程度でほとんど差はなく、コント
ラスト指標γ値は同様であることが分かる。Comparing the above two characteristic diagrams, it can be seen that the state of film thinning is practically negligible and there is almost no difference, and the contrast index γ values are the same.
以上から明らかなように１本発明のパターン形成方法に
より、高コントラストで膨潤のない解像性の良好なＰＭ
ＭＡレジストパターンを従来のＩＡＡ現儂よりも短時間
で形成することができ、γ値も従来のＩＡＡ現像法と同
様の値を得ることができた。As is clear from the above, the pattern forming method of the present invention can produce PM with high contrast and good resolution without swelling.
The MA resist pattern could be formed in a shorter time than the conventional IAA development method, and a γ value similar to that of the conventional IAA development method could be obtained.
尚、上記実施例では％ＰＭＭＡレジストに対し電子線を
照射した場合のレジストパターン形成方法の一実施例に
ついて述べたがレジストはポリメチルメタクリレ−）
ＣＰ陣仏）に限定されるものではなくメチルメタクリレ
ート共重合体でも同様な現像が可能であり、又電子線照
射条件（加速電圧。In the above example, an example of a resist pattern forming method was described in which a PMMA resist was irradiated with an electron beam, but the resist was polymethyl methacrylate).
Similar development is possible with methyl methacrylate copolymer, and is not limited to CP Jinbutsu), and also under electron beam irradiation conditions (accelerating voltage.
照射せ）も上述した実施例に限定されるものではない。The irradiation method is not limited to the above-mentioned embodiments.
メチルメタクリレート共重合体としては、メチルメタク
リレートとアクリル酸エステル、オレフィン、酢酸ビニ
ル等の単量体のいずれかとの共重合体が考えられる。父
、 ＰＭＭＡに対する電子線照射量を増加させるとそれ
に伴って現像時間は更に短縮できる。父、電子線に限ら
ず所定波長のｔｄ波あるいは所定エネルギの粒子線など
ＰＭＭＡが感応する放射線を選択的に照射してレジスト
パターンを形成する場合のすべてに本発明のパターン形
成方法が適用できる。本発明のパターン形成方法の実施
例では多層レジストを用いた場合について述べたが、
ＰＭＭＡ単層レジストの現像に関しても本発明を適用で
きることは言うまでもない。As the methyl methacrylate copolymer, a copolymer of methyl methacrylate and any monomer such as an acrylic ester, an olefin, or vinyl acetate can be considered. By increasing the amount of electron beam irradiation to PMMA, the development time can be further shortened. The pattern forming method of the present invention is applicable not only to electron beams but also to all cases where a resist pattern is formed by selectively irradiating radiation to which PMMA is sensitive, such as TD waves of a predetermined wavelength or particle beams of a predetermined energy. In the embodiment of the pattern forming method of the present invention, the case where a multilayer resist was used was described.
It goes without saying that the present invention can also be applied to the development of a PMMA single layer resist.
本発明のパターン形成方法を用いることにより。 By using the pattern forming method of the present invention.
従来よりも大幅に短縮化された現像処理時間で、アスペ
クト比の高い高コントラストでしかも膨潤のできにくい
高解偉度のレジストパターンを形成することができる。A resist pattern with a high aspect ratio, high contrast, and high resolution that is resistant to swelling can be formed in a development process time that is significantly shortened compared to the conventional method.
第１図は本発明の一実施例の製造工程を示す断面図、第
２図は本発明の現像方法によって得られるＰＭＭＡレジ
ストの゛電子線に対する感度を示す特性図、第３図は従
来の現像方法によって得られるＰＫＭＡレジストの電子
線に対する感度を示す特性図である。
１・・・シリコン基板 ４・・・ポリシロキサン５．
５′・・・ポリメチルメタクリレ−） （ＰＭＭＡ）代
理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
？
２２２Ｎ２２〜乙
？
第１図
第２図
第３図FIG. 1 is a cross-sectional view showing the manufacturing process of an embodiment of the present invention, FIG. 2 is a characteristic diagram showing the sensitivity to electron beams of the PMMA resist obtained by the developing method of the present invention, and FIG. 3 is a conventional development method. FIG. 2 is a characteristic diagram showing the sensitivity to electron beams of a PKMA resist obtained by the method. 1... Silicon substrate 4... Polysiloxane 5.
5'...Polymethyl methacrylate) (PMMA) Agent Patent attorney Nori Chika Yudo Kikuo Takehana? 222N22~Otsu? Figure 1 Figure 2 Figure 3
Claims (1)
はメチルメタクリレート共重合体からなるレジスト膜を
形成した後、所定波長の電磁波或いは所定エネルギの粒
子線を前記レジスト膜に選択的に照射し現像処理してレ
ジストパターンとして形成するに際し、前記現像処理に
はＣＨ＿３ＣＯＯＣ＿ｎＨ＿２＿ｎ＿＋＿１（ｎ≦４）
を用いるこを特徴とするパターン形成方法。After forming a resist film made of polymethyl methacrylate (PMMA) or methyl methacrylate copolymer on a substrate, the resist film is selectively irradiated with electromagnetic waves of a predetermined wavelength or particle beams of a predetermined energy and developed to form a resist pattern. CH_3COOC_nH_2_n_+_1 (n≦4) in the development process
A pattern forming method characterized by using.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61016834A JPS62175739A (en) | 1986-01-30 | 1986-01-30 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61016834A JPS62175739A (en) | 1986-01-30 | 1986-01-30 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62175739A true JPS62175739A (en) | 1987-08-01 |
Family
ID=11927224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61016834A Pending JPS62175739A (en) | 1986-01-30 | 1986-01-30 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62175739A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008026500A (en) * | 2006-07-20 | 2008-02-07 | Dainippon Printing Co Ltd | Photomask blanks added with high dry etching resistance polymer layer and method of manufacturing photomask using photomask blanks |
| JP2013011900A (en) * | 2012-08-31 | 2013-01-17 | Dainippon Printing Co Ltd | Method of manufacturing photomask using photomask blanks with high dry etching resistance polymer layer added thereto |
| US8546063B2 (en) | 2009-02-20 | 2013-10-01 | Fujifilm Corporation | Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays |
| US8637222B2 (en) | 2009-01-30 | 2014-01-28 | Fujifilm Corporation | Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern |
| US8889339B2 (en) | 2011-03-25 | 2014-11-18 | Fujifilm Corporation | Resist pattern forming method, resist pattern, crosslinkable negative chemical amplification resist composition for organic solvent development, resist film and resist-coated mask blanks |
| JP2015135513A (en) * | 2015-03-06 | 2015-07-27 | 大日本印刷株式会社 | Photomask blank |
| JP2016167092A (en) * | 2016-05-20 | 2016-09-15 | 大日本印刷株式会社 | Photomask blank |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5330330A (en) * | 1976-09-01 | 1978-03-22 | Fujitsu Ltd | Developing liquid for radiant ray resist |
| JPS53142876A (en) * | 1977-05-18 | 1978-12-12 | Matsushita Electric Ind Co Ltd | Development method of electron ray resist and elctron beam resist |
| JPS5688135A (en) * | 1979-12-21 | 1981-07-17 | Hitachi Ltd | Developer |
-
1986
- 1986-01-30 JP JP61016834A patent/JPS62175739A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5330330A (en) * | 1976-09-01 | 1978-03-22 | Fujitsu Ltd | Developing liquid for radiant ray resist |
| JPS53142876A (en) * | 1977-05-18 | 1978-12-12 | Matsushita Electric Ind Co Ltd | Development method of electron ray resist and elctron beam resist |
| JPS5688135A (en) * | 1979-12-21 | 1981-07-17 | Hitachi Ltd | Developer |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008026500A (en) * | 2006-07-20 | 2008-02-07 | Dainippon Printing Co Ltd | Photomask blanks added with high dry etching resistance polymer layer and method of manufacturing photomask using photomask blanks |
| US8637222B2 (en) | 2009-01-30 | 2014-01-28 | Fujifilm Corporation | Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern |
| US8546063B2 (en) | 2009-02-20 | 2013-10-01 | Fujifilm Corporation | Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays |
| EP2746853A2 (en) | 2009-02-20 | 2014-06-25 | Fujifilm Corporation | Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays |
| EP3745207A1 (en) | 2009-02-20 | 2020-12-02 | FUJIFILM Corporation | Pattern-forming method using electron beams for euv rays and use of this method for forming a fine circuit of a semiconductor device |
| US8889339B2 (en) | 2011-03-25 | 2014-11-18 | Fujifilm Corporation | Resist pattern forming method, resist pattern, crosslinkable negative chemical amplification resist composition for organic solvent development, resist film and resist-coated mask blanks |
| JP2013011900A (en) * | 2012-08-31 | 2013-01-17 | Dainippon Printing Co Ltd | Method of manufacturing photomask using photomask blanks with high dry etching resistance polymer layer added thereto |
| JP2015135513A (en) * | 2015-03-06 | 2015-07-27 | 大日本印刷株式会社 | Photomask blank |
| JP2016167092A (en) * | 2016-05-20 | 2016-09-15 | 大日本印刷株式会社 | Photomask blank |
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