JPS621546B2 - - Google Patents

Info

Publication number
JPS621546B2
JPS621546B2 JP15512682A JP15512682A JPS621546B2 JP S621546 B2 JPS621546 B2 JP S621546B2 JP 15512682 A JP15512682 A JP 15512682A JP 15512682 A JP15512682 A JP 15512682A JP S621546 B2 JPS621546 B2 JP S621546B2
Authority
JP
Japan
Prior art keywords
solution
tank
resist
resist solution
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15512682A
Other languages
Japanese (ja)
Other versions
JPS5946164A (en
Inventor
Ken Ogura
Hiroo Komeya
Yasuhiro Kawagoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP15512682A priority Critical patent/JPS5946164A/en
Publication of JPS5946164A publication Critical patent/JPS5946164A/en
Publication of JPS621546B2 publication Critical patent/JPS621546B2/ja
Granted legal-status Critical Current

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  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 この発明は、レジストのような有機高分子溶液
の塗布装置の改良に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a coating device for an organic polymer solution such as a resist.

従来、集積回路パターン形成を行なうためのリ
ソグラフイでは、半導体基板上にレジスト溶液を
塗布してベークした後、所望のパターン部に露光
し、現像工程を経て所望のパターン形成してい
る。このようなリソグラフイ技術は半導体装置の
製造では広く一般に使用されている技術である。
前述のようなリソグラフイ工程でレジスト膜を形
成するには、レジスト溶液を半導体基板に滴下し
た後、スピン塗布する方法が高集積回路の製造プ
ロセスに主として用いられ、他にスプレー法、コ
ータ法などがある。
Conventionally, in lithography for forming integrated circuit patterns, a resist solution is applied onto a semiconductor substrate, baked, and then a desired pattern portion is exposed to light and a development process is performed to form the desired pattern. Such lithography technology is widely used in the manufacture of semiconductor devices.
To form a resist film in the lithography process described above, the method of dropping a resist solution onto a semiconductor substrate and then spin coating is mainly used in the manufacturing process of highly integrated circuits.Other methods include spray method, coater method, etc. There is.

従来のレジスト塗布スピナー装置につき、第1
図を参照して説明する。第1図において、1はレ
ジスト溶液2を収容した容量数リツトルの加圧タ
ンク、3は加圧タンク1の上部に開口された加圧
ガスパイプ、4は加圧タンク1の下部に一端が連
通され、他端に滴下口5が設けられた移送パイ
プ、6は移送パイプ4に設けられたフイルタ、7
は電動機8によつて回転される回転装置9上に装
着された半導体基板であるウエハであり、このウ
エハ7上に前記滴下口5が配設されている。
Regarding the conventional resist coating spinner device, the first
This will be explained with reference to the figures. In FIG. 1, 1 is a pressurized tank containing a resist solution 2 with a capacity of several liters, 3 is a pressurized gas pipe opened at the top of the pressurized tank 1, and 4 is connected at one end to the bottom of the pressurized tank 1. , a transfer pipe having a dripping port 5 at the other end, 6 a filter provided on the transfer pipe 4, 7
A wafer is a semiconductor substrate mounted on a rotating device 9 rotated by an electric motor 8, and the dropping port 5 is disposed on the wafer 7.

前述のように構成されたレジスト塗布スピナー
装置では、加圧ガスパイプ3から加圧タンク1に
加圧ガスを送つてこのタンク内を加圧すること
で、加圧タンク1内のレジスト溶液を移送パイプ
4でフイルタ6を介して滴下口5に送り、この滴
下口5からウエハ7上に滴下させる。その後回転
装置9の電動機8の駆動によつてウエハ7にレジ
スト溶液をスピン塗布する。
In the resist coating spinner device configured as described above, pressurized gas is sent from the pressurized gas pipe 3 to the pressurized tank 1 to pressurize the inside of this tank, thereby transferring the resist solution in the pressurized tank 1 to the transfer pipe 4. Then, it is sent to the dripping port 5 through the filter 6, and dripped onto the wafer 7 from the dripping port 5. Thereafter, the resist solution is spin-coated onto the wafer 7 by driving the electric motor 8 of the rotating device 9 .

このような従来の装置は、レジスト溶液の保存
については、これを室温すなわち20℃程度の温度
条件で保存することが最長保存を可能にするレジ
スト溶液が多いため、前記加圧タンクなどを温度
コントロールすることが必要視されていなかつ
た。しかし、前述したレジスト塗布膜の形成は、
露光工程およびパターン寸法の制御に高精度性が
要求されつつあることから、高精度にすることが
要求され、レジスト溶液の温度コントロールが必
要とされるに至つている。
In conventional devices like this, most resist solutions can be stored for the longest time by storing them at room temperature, i.e., at a temperature of about 20°C. It was not seen as necessary. However, the formation of the resist coating film described above,
Since high precision is increasingly required in the exposure process and control of pattern dimensions, high precision is required, and temperature control of the resist solution is now required.

すなわち、前述した従来のレジスト塗布装置に
は、レジスト溶液の温度制御手段が付加されてい
ないため、レジスト溶液に粘度の変動などがあ
り、このため僅かなレジスト膜厚の変動や塗布む
らが生じ、これらが高集積回路パターンの形成に
対して寸法変化を生じさせるようになつている。
That is, since the conventional resist coating apparatus described above is not equipped with a means for controlling the temperature of the resist solution, the viscosity of the resist solution may fluctuate, resulting in slight variations in resist film thickness or uneven coating. These have led to dimensional changes in the formation of highly integrated circuit patterns.

また、前記レジスト膜以外に、ポリイミドを代
表とする熱硬化性高分子膜が半導体集積回路構造
体として使用される状況になつている。例えば集
積回路の配線は、集積回路の高密度化に伴い、金
属配線を多層構造とすることが必要となり、多層
構造の配線間の絶縁物としてポリイミド膜が使用
され、他の例として集積回路の保護としても熱硬
化性高分子膜が重要視されるようになつている。
In addition to the resist film, thermosetting polymer films, typically polyimide, are now being used as semiconductor integrated circuit structures. For example, with the increasing density of integrated circuits, it is necessary for metal wiring to have a multilayer structure, and polyimide films are used as insulators between the interconnects in the multilayer structure. Thermosetting polymer films are also becoming more important for protection.

しかし、ポリイミドを代表とする熱硬化性樹脂
は、室温保存寿命がきわめて短く、室温放置によ
り短時間で高粘度となり、前述のような従来の塗
布装置を使用した場合には、粘度の変動によつて
ポリイミド膜の均一な厚さでの形成がきわめて困
難となる。
However, thermosetting resins, such as polyimide, have an extremely short storage life at room temperature and become highly viscous in a short period of time when left at room temperature. As a result, it becomes extremely difficult to form a polyimide film with a uniform thickness.

さらに、従来の塗布装置の滴下口でのレジスト
などの有機高分子溶液は、絶えず周囲空気中に放
置されているために、前記溶液が固化する欠点が
あり、絶えず滴下口部を清掃することを余儀なく
され、プロセス上煩雑になるという問題がある。
Furthermore, organic polymer solutions such as resist at the drip opening of conventional coating devices have the disadvantage of solidifying because they are constantly left in the surrounding air. There is a problem in that it is forced and the process becomes complicated.

この発明は、前述した従来の塗布装置の欠点を
除去しようとするものであつて、レジスト、ポリ
イミド、シランなどの有機高分子溶液をタンク内
では冷却しておき、冷却されている溶液を加熱し
て溶液滴下口内側を含むタンク外で循環させ、前
記滴下口の内側に設けた開閉扉を開いて溶液を滴
下させるようにして、レジスト膜、ポリイミド
膜、有機シラン膜を均一な膜厚に形成できる、有
機高分子溶液の塗布装置を提供することを目的と
している。
This invention is an attempt to eliminate the above-mentioned drawbacks of the conventional coating equipment, and involves cooling an organic polymer solution such as a resist, polyimide, or silane in a tank, and then heating the cooled solution. The resist film, polyimide film, and organic silane film are formed to a uniform thickness by circulating the solution outside the tank, including the inside of the solution dripping port, and opening the opening/closing door provided inside the dripping port to drip the solution. The purpose of the present invention is to provide an organic polymer solution coating device that can coat an organic polymer solution.

以下、この発明の一実施例につき第2図、第3
図を参照して説明する。第2図において、11は
レジスト溶液12を収容した加圧タンク、13は
このタンク11を収納した冷却収納容器であり、
冷却収納容器13はタンク11内のレジスト溶液
を冷却する冷却手段を構成している。14はタン
ク11内上部に開口する加圧ガスパイプ、15は
タンク11内下部に開口してタンク11内に延び
る移送パイプであり、これらによつて移送手段2
4が構成されている。16は移送パイプ15の先
端部に設けられた恒温加熱装置であり、この加熱
装置16の先端側に循環手段25の往路管19と
復路管20とが接続され、往路管19はポンプ1
7、フイルタ18を経て、滴下口部に至つてい
る。滴下口部は、第3図に示すように、往路管1
9がこれの先端部を覆う復路管20の大径部21
下端に設けた溶液滴下口22の真上に開口され、
復路管20はポンプ17吸込側の恒温加熱装置1
6内で往路管19に接続されている。前記滴下口
22の内側には内方に開く滴下口開閉扉23が設
けられている。また、滴下口22の真下に電動機
26で水平回転される回転装置27上に装着した
ウエハ28が配設されている。
2 and 3 for one embodiment of this invention.
This will be explained with reference to the figures. In FIG. 2, 11 is a pressurized tank containing the resist solution 12, 13 is a cooling storage container containing this tank 11,
The cooling storage container 13 constitutes a cooling means for cooling the resist solution in the tank 11. 14 is a pressurized gas pipe that opens at the upper part of the tank 11; 15 is a transfer pipe that opens at the lower part of the tank 11 and extends into the tank 11;
4 are configured. Reference numeral 16 denotes a constant temperature heating device provided at the tip of the transfer pipe 15. The outgoing pipe 19 and the returning pipe 20 of the circulation means 25 are connected to the leading end of the heating device 16. The outgoing pipe 19 is connected to the pump 1.
7. It passes through the filter 18 and reaches the drip opening. As shown in FIG.
9 is the large diameter portion 21 of the return pipe 20 covering the tip thereof.
It is opened directly above the solution dripping port 22 provided at the lower end,
The return pipe 20 is a constant temperature heating device 1 on the suction side of the pump 17.
6 and is connected to an outgoing pipe 19. A drip port opening/closing door 23 that opens inward is provided inside the drip port 22. Further, a wafer 28 mounted on a rotating device 27 horizontally rotated by an electric motor 26 is disposed directly below the dripping port 22 .

前述のように構成されたレジスト塗布スピナー
装置は、タンク11が冷却収納容器13に収納さ
れて、タンク11内のレジスト溶液12の保存特
性を安定化させている。この場合に、タンク11
の全体を冷却することにより、レジスト溶液の粘
度を常に一定にするために、これを−10℃程度に
維持することが好ましい。
In the resist coating spinner device configured as described above, the tank 11 is housed in the cooling storage container 13 to stabilize the storage characteristics of the resist solution 12 in the tank 11. In this case, tank 11
In order to keep the viscosity of the resist solution constant by cooling the entire resist solution, it is preferable to maintain the resist solution at about -10°C.

また、タンク11内で冷却されているレジスト
溶液は、従来の塗布装置の場合と同様に、加圧ガ
スパイプ14からタンク11内に加圧ガスを送る
ことにより、移送パイプ15でタンク11外に送
られる。タンク11外に移送されたレジスト溶液
は、恒温加熱装置16で20℃程度に保持して塗布
粘度に調整する。
In addition, the resist solution cooled in the tank 11 is transferred to the outside of the tank 11 through the transfer pipe 15 by sending pressurized gas into the tank 11 from the pressurized gas pipe 14, as in the case of a conventional coating device. It will be done. The resist solution transferred to the outside of the tank 11 is maintained at about 20° C. by a constant temperature heating device 16 to adjust the coating viscosity.

粘度が調整されたレジスト溶液は、ポンプ17
でフイルタ18を通過させ、微粒子やごみなどを
除去した後、滴下口22に送られる。レジスト滴
下の必要がない場合には、第3図に示すように、
滴下口22の開閉扉23を閉じておき、レジスト
溶液を往路管19から復路管20に入れ、滴下口
22内側を経て恒温加熱装置16に戻り、ここか
ら往路管19に導いて循環させる。レジスト溶液
を滴下させる場合には、開閉扉23を開いて滴下
口22からウエハ28上にレジスト溶液を滴下さ
せる。したがつて、滴下口22部はレジスト溶液
が常に循環されているために、溶液の固化、付着
の発生がない。
The resist solution whose viscosity has been adjusted is pumped to the pump 17.
After passing through a filter 18 to remove particulates and dust, the water is sent to a drip port 22. If there is no need to drop resist, as shown in Figure 3,
The opening/closing door 23 of the dropping port 22 is closed, and the resist solution is introduced from the outgoing pipe 19 into the returning pipe 20, returns to the constant temperature heating device 16 through the inside of the dropping port 22, and is guided from there to the outgoing pipe 19 for circulation. When dropping the resist solution, the opening/closing door 23 is opened and the resist solution is dropped onto the wafer 28 from the dropping port 22. Therefore, since the resist solution is constantly circulated through the drip opening 22, there is no solidification or adhesion of the solution.

以上説明したように、この発明の一実施例によ
る塗布装置は、タンク11内のレジスト溶液を冷
却すること、タンク11外に移送されたレジスト
溶液を恒温加熱装置16で加熱して前記溶液の粘
度を調整すること、およびレジスト滴下口部には
常にレジスト溶液が循環していることにより、 (i) レジスト溶液の粘度特性が均一である、 (ii) レジスト滴下口部のレジストが固化しない、 という理由で、ウエハにレジストを塗布する場合
に、滴下口の清掃などの作業を必要とせず、煩雑
さが解消でき、また塗布されたレジスト溶液中に
固化したレジストの混入がなく、パターン欠陥の
発生などの問題がなく、さらに均一な膜厚にレジ
ストを形成できる。したがつて、高集積回路のパ
ターニングの品質が向上し、素子の歩留り向上が
はかれる利点がある。
As explained above, the coating apparatus according to the embodiment of the present invention cools the resist solution in the tank 11, and heats the resist solution transferred outside the tank 11 with the constant temperature heating device 16 to reduce the viscosity of the solution. By adjusting the resist solution and constantly circulating the resist solution at the resist dripping opening, (i) the viscosity characteristics of the resist solution are uniform, and (ii) the resist at the resist dripping opening does not solidify. For this reason, when applying resist to a wafer, there is no need to clean the dripping port, which eliminates complexity, and there is no chance of solidified resist getting mixed into the applied resist solution, resulting in pattern defects. There are no problems such as this, and the resist can be formed to have a more uniform thickness. Therefore, there are advantages in that the quality of patterning of highly integrated circuits is improved and the yield of devices is improved.

なお、前述した実施例では、レジスト溶液の塗
布について述べたがこの発明の塗布装置は、ポリ
イミド前駆体や有機シラン溶液などの有機高分子
溶液の塗布に広く適用できる。
In the above embodiments, coating of a resist solution was described, but the coating apparatus of the present invention can be widely applied to coating of organic polymer solutions such as polyimide precursors and organic silane solutions.

前述したように、この発明による塗布装置は、
タンク内の有機高分子溶液を冷却する冷却手段
と、タンク内で前記溶液の粘度を調整する恒温加
熱装置と、溶液滴下口部を含むタンク外で溶液を
循環させる循環手段とを有しているので、常に高
精度に均一な膜厚にレジストなどの溶液を塗布で
きるという効果があり、VLSI製造に用いて好適
なものである。
As mentioned above, the coating device according to the present invention has the following features:
It has a cooling means for cooling the organic polymer solution in the tank, a constant temperature heating device for adjusting the viscosity of the solution in the tank, and a circulation means for circulating the solution outside the tank including a solution dripping port. Therefore, it has the effect of always being able to apply a solution such as a resist to a uniform film thickness with high precision, and is suitable for use in VLSI manufacturing.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来例の塗布装置を示す構成説明図、
第2図はこの発明の一実施例による塗布装置を示
す構成説明図、第3図は同滴下口部の側断面図で
ある。 11…タンク、12…レジスト溶液、13…冷
却収納容器(冷却手段)、14…加圧ガスパイ
プ、15…移送パイプ、16…恒温加熱装置、1
7…ポンプ、18…フイルタ、19…往路管、2
0…復路管、21…大径部、22…滴下口、23
…開閉扉、24…移送手段、25…循環手段、2
6…電動機、27…回転装置、28…ウエハ。
FIG. 1 is a configuration explanatory diagram showing a conventional coating device;
FIG. 2 is a configuration explanatory diagram showing a coating device according to an embodiment of the present invention, and FIG. 3 is a side sectional view of the same drip opening. 11...tank, 12...resist solution, 13...cooling storage container (cooling means), 14...pressurized gas pipe, 15...transfer pipe, 16...constant temperature heating device, 1
7... Pump, 18... Filter, 19... Outgoing pipe, 2
0...Return pipe, 21...Large diameter section, 22...Dripping port, 23
...Opening/closing door, 24...Transfer means, 25...Circulation means, 2
6...Electric motor, 27...Rotating device, 28...Wafer.

Claims (1)

【特許請求の範囲】[Claims] 1 レジストのような有機高分子溶液を収容する
タンクと、このタンクに収容した前記溶液を冷却
する冷却手段と、前記タンクと連通されて前記溶
液をタンク外に移送する移送手段と、この移送手
段と連通されて溶液滴下口内側を含むタンク外で
前記溶液を循環させる循環手段と、前記タンク外
の溶液を所定温度に加熱する恒温加熱装置と、前
記滴下口の内側に設けた滴下口開閉扉とを備えた
ことを特徴とする有機高分子溶液の塗布装置。
1. A tank containing an organic polymer solution such as a resist, a cooling means for cooling the solution contained in this tank, a transfer means communicating with the tank and transferring the solution to the outside of the tank, and this transfer means. a circulation means that circulates the solution outside the tank including the inside of the solution dripping port, a constant temperature heating device that heats the solution outside the tank to a predetermined temperature, and a dripping port opening/closing door provided inside the dripping port. An organic polymer solution coating device comprising:
JP15512682A 1982-09-08 1982-09-08 Apparatus for applying organic macromolecular solution Granted JPS5946164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15512682A JPS5946164A (en) 1982-09-08 1982-09-08 Apparatus for applying organic macromolecular solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15512682A JPS5946164A (en) 1982-09-08 1982-09-08 Apparatus for applying organic macromolecular solution

Publications (2)

Publication Number Publication Date
JPS5946164A JPS5946164A (en) 1984-03-15
JPS621546B2 true JPS621546B2 (en) 1987-01-14

Family

ID=15599123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15512682A Granted JPS5946164A (en) 1982-09-08 1982-09-08 Apparatus for applying organic macromolecular solution

Country Status (1)

Country Link
JP (1) JPS5946164A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0194620A (en) * 1987-10-06 1989-04-13 Mitsubishi Electric Corp Spin applicator
JPS647972A (en) * 1987-06-30 1989-01-11 Mitsubishi Electric Corp Spin coater
JPH01130758A (en) * 1987-11-17 1989-05-23 Mitsubishi Electric Corp Spin coating device
JPS6437838A (en) * 1987-08-03 1989-02-08 Nec Corp Chemical liquid coater
JP2558490B2 (en) * 1988-03-07 1996-11-27 東京エレクトロン株式会社 Development device
JP2664733B2 (en) * 1988-07-07 1997-10-22 株式会社東芝 Coating device and coating method using the same
JPH0734427B2 (en) * 1988-08-08 1995-04-12 日本電気株式会社 Dispenser for forming coating film
JPH07263654A (en) * 1995-03-27 1995-10-13 Hitachi Ltd Manufacture of solid-state imaging device
JP2007067199A (en) * 2005-08-31 2007-03-15 Showa Denko Kk Method of pretreatment of masking material, and manufacturing method of solid-state electrolytic capacitor employing the same
JP2014216471A (en) * 2013-04-25 2014-11-17 大日本印刷株式会社 Imprint device and imprint method

Also Published As

Publication number Publication date
JPS5946164A (en) 1984-03-15

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