JPS62150167A - Semiconductor flow velocity detector - Google Patents

Semiconductor flow velocity detector

Info

Publication number
JPS62150167A
JPS62150167A JP60295049A JP29504985A JPS62150167A JP S62150167 A JPS62150167 A JP S62150167A JP 60295049 A JP60295049 A JP 60295049A JP 29504985 A JP29504985 A JP 29504985A JP S62150167 A JPS62150167 A JP S62150167A
Authority
JP
Japan
Prior art keywords
circuit
flow velocity
semiconductor
signal
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60295049A
Other languages
Japanese (ja)
Inventor
Masayuki Sekimura
関村 雅之
Shunji Shiromizu
白水 俊次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60295049A priority Critical patent/JPS62150167A/en
Publication of JPS62150167A publication Critical patent/JPS62150167A/en
Pending legal-status Critical Current

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  • Details Of Flowmeters (AREA)
  • Measuring Volume Flow (AREA)

Abstract

PURPOSE:To fetch a flow velocity detection signal without pulsating components, by providing a circuit for subtracting pulsating components extracted from an output signal of a flow velocity element from the output signal. CONSTITUTION:A waveform processing circuit 3 made up of a pulsating component extraction circuit 31 which extracts pulsating components alone from an output signal Vc of a flow velocity detection element 1 and a differential circuit 32 which subtracts the pulsating components extracted with the circuit 31 from the signal Vc. An output adjusting circuit 4 comprises a differential amplifier using an operational amplifier 84 and a buffer circuit for zero-adjustment and gain adjustment using an operational amplifier 85. Here, the pulsating components extraction circuit 31 extracts pulsating components from the signal Vc of an element 1 and the differential circuit 32 subtracts the pulsating components from the signal Vc. Thus, a flow velocity detection signal without pulsation is fetched from the output adjusting circuit 4.

Description

【発明の詳細な説明】 本発明は、流体の流速を検出する半導体流速検出器に係
り、特にその信号処理回路部の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor flow velocity detector for detecting the flow velocity of a fluid, and particularly to improvements in its signal processing circuit section.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来の半導体流速検出器の構成例を第5図に示す。半導
体流速検出素子1は一枚の半導体基板に基板温度測定用
トランジスタ5と発熱用トランジスタ6を集積形成した
ものである。7はこの流速検出素子1どは別に設けられ
た流体温度測定用トランジスタである。この流体温度測
定用トランジスタ7と、演暉増幅器81および定電流源
91゜92の部分は駆動回路2を構成している。この駆
動回路2は、検出素子1の基板温度測定用トランジスタ
5により測定された素子温度が流体温度測定用トランジ
スタ7により測定された流体温度より常に一定温度高く
なるように、発熱用トランジスタ6を1ill @する
ものである。この流速検出器は、検出素子1の流体によ
る熱放散を利用し、流体の流速により変化する例えば発
熱用トランジスタ5のコレクタ電位Vcを流速検出信号
としている。
An example of the configuration of a conventional semiconductor flow rate detector is shown in FIG. The semiconductor flow rate detection element 1 is formed by integrating a substrate temperature measuring transistor 5 and a heat generating transistor 6 on a single semiconductor substrate. Reference numeral 7 designates a transistor for measuring fluid temperature, which is provided separately from the flow rate detection element 1 and the like. The fluid temperature measuring transistor 7, the performance amplifier 81, and the constant current sources 91 and 92 constitute the drive circuit 2. This drive circuit 2 operates to drive the heat generating transistor 6 to 1ill so that the element temperature measured by the substrate temperature measuring transistor 5 of the detection element 1 is always a certain temperature higher than the fluid temperature measured by the fluid temperature measuring transistor 7. It is something to do. This flow rate detector utilizes heat dissipation by the fluid in the detection element 1, and uses, for example, the collector potential Vc of the heat generating transistor 5, which changes depending on the flow rate of the fluid, as a flow rate detection signal.

この検出信号は、零調と利得調整を行なう出力調整回路
4を介して取出されるようになっている。
This detection signal is taken out via an output adjustment circuit 4 that performs zero adjustment and gain adjustment.

第6図は第5図の流速検出器の流速出力voutの応答
信号波形である。駆動回路2は演算増幅器81により発
熱用トランジスタ6の電流を制御しているが、この制御
がオン2オフ的な制御であるために、検出信号は脈動波
形となっている。このため例えば、流速出力の読取りに
ディジタル・ボルトメータを用いると、流速が変化しな
くても表示される数値はサンプリングの度に変るので、
流速測定を正確に行なうことが難しいという難点があっ
た。
FIG. 6 is a response signal waveform of the flow velocity output vout of the flow velocity detector shown in FIG. The drive circuit 2 controls the current of the heat generating transistor 6 using the operational amplifier 81, but since this control is an on-2-off type control, the detection signal has a pulsating waveform. Therefore, for example, if a digital voltmeter is used to read the flow rate output, the displayed value will change with each sampling even if the flow rate does not change.
The problem was that it was difficult to accurately measure the flow velocity.

上述のような脈動波形ではなく、直流的な出力を得るた
めには、一つの方法として第5図に示すように駆動回路
2内の演算増幅器81にコンデンサCIを付加し、発熱
用トランジスタ6に対づる駆動信号波形をなまらせるこ
とが考えられる。しかしこの方法は、流速出力信号を直
流的にする代わりに流速の変化に対する応答特性を犠牲
にすることになる。即ちこの方法によれば、第6図の応
答特性に対して、第7図のような応答特性が得られる。
In order to obtain a direct current output instead of the pulsating waveform as described above, one method is to add a capacitor CI to the operational amplifier 81 in the drive circuit 2, as shown in FIG. It is conceivable to blunt the pairing drive signal waveforms. However, this method sacrifices response characteristics to changes in flow velocity in exchange for making the flow velocity output signal DC. That is, according to this method, a response characteristic as shown in FIG. 7 can be obtained in contrast to the response characteristic shown in FIG.

直流的な出力を得る他の方法としては、検出素子出力部
に例えば第8図に示すような抵抗RfとコンデンサRe
からなるフィルタを付加することも考えられる。しかし
この方法も、やはり応答特性を犠牲にすることになる。
Another method for obtaining a DC output is to use a resistor Rf and a capacitor Re as shown in FIG.
It is also possible to add a filter consisting of: However, this method also sacrifices response characteristics.

以上のように従来の半導体流速検出器では、安定した直
流出力でかつ応答特性の良い出力を得ることができない
、という問題があった。
As described above, the conventional semiconductor flow velocity detector has a problem in that it is not possible to obtain a stable DC output and an output with good response characteristics.

〔発明の目的〕[Purpose of the invention]

本発明は上記の点に鑑みなされたもので、応答特性がよ
くしかも安定した直流出力を得ることを可能とした半導
体流速検出器を提供することを目的とする。
The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor flow velocity detector that has good response characteristics and is capable of obtaining stable DC output.

〔発明の概要〕[Summary of the invention]

本発明にかかる半導体流速検出器は、半導体流速検出素
子の出力信号から脈動成分のみを抽出する回路を設け、
この回路で抽出された脈動成分を前記半導体流体検出素
子の出力信号から差引く回路を設けて、脈動のない流速
検出信号を得るようにしたことを特徴とする。
The semiconductor flow rate detector according to the present invention is provided with a circuit that extracts only the pulsating component from the output signal of the semiconductor flow rate detection element,
The present invention is characterized in that a circuit for subtracting the pulsation component extracted by this circuit from the output signal of the semiconductor fluid detection element is provided to obtain a flow velocity detection signal free of pulsation.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、流速検出素子の応答特性を損うことな
く安定した直流的流速出力信号を得ることができる。従
って流速測定の精度向上が図られる。また応答特性が損
われないので、速い応答特性が要求される用途に適用す
ることができ、半導体流速検出器の適用範囲が広いもの
となる。
According to the present invention, a stable direct current flow velocity output signal can be obtained without impairing the response characteristics of the flow velocity detection element. Therefore, the accuracy of flow velocity measurement can be improved. Furthermore, since the response characteristics are not impaired, it can be applied to applications that require fast response characteristics, and the range of application of the semiconductor flow velocity detector is widened.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の詳細な説明する。 The present invention will be explained in detail below.

第1図は一実施例の概略構成を示す。半導体流速検出素
子1、これを駆動する駆動回路2および出力調整回路4
の部分は従来の第5図に示す構成と変らない。この実施
例では、流速検出素子1と出力調整回路4との間に波形
処理回路3を設けている。
FIG. 1 shows a schematic configuration of an embodiment. Semiconductor flow velocity detection element 1, drive circuit 2 for driving it, and output adjustment circuit 4
The portion shown in FIG. 5 is the same as the conventional structure shown in FIG. In this embodiment, a waveform processing circuit 3 is provided between the flow velocity detection element 1 and the output adjustment circuit 4.

第2図は、波形処理回路3および出力調整回路4の部分
の具体的な構成例を示す。波形処理回路3は、流速検出
素子1の出力信号(例えば前述のように発熱用トランジ
スタのコレクタ電位変化)Vcから脈動成分のみを抽出
する脈動成分抽出回路31と、この抽出回路31で抽出
された脈動成分を検出素子出力信号Vcから差引く差動
回路32とから構成されている。脈動成分抽出回路31
は演算増幅器82を用いて構成された一種のバンドパス
フィルタであり、差動回路32は演算増幅器83を用い
て構成された差動増幅器である。
FIG. 2 shows a specific example of the configuration of the waveform processing circuit 3 and output adjustment circuit 4. In FIG. The waveform processing circuit 3 includes a pulsating component extraction circuit 31 that extracts only the pulsating component from the output signal Vc of the flow velocity detection element 1 (for example, a change in the collector potential of the heat generating transistor as described above), and The differential circuit 32 subtracts the pulsating component from the detection element output signal Vc. Pulsating component extraction circuit 31
is a type of band-pass filter configured using an operational amplifier 82, and the differential circuit 32 is a differential amplifier configured using an operational amplifier 83.

出力調整回路4は、演算増幅器84を用いた差動増幅器
と、演算増幅器85を用いた零調および利m調整用のバ
ッファ回路とからなる。
The output adjustment circuit 4 includes a differential amplifier using an operational amplifier 84 and a buffer circuit for zero adjustment and gain m adjustment using an operational amplifier 85.

第3図はこの実施例による流速検出信号の応答特性を示
す。第6図、第7図と比較して明らかなようにこの実施
例によれば、脈動成分のみが除かれた安定な直流出力が
流速検出信号として得られ、応答性は損われていない。
FIG. 3 shows the response characteristics of the flow velocity detection signal according to this embodiment. As is clear from a comparison with FIGS. 6 and 7, according to this embodiment, a stable DC output from which only the pulsation component is removed is obtained as a flow velocity detection signal, and the responsiveness is not impaired.

第4図は他の実施例の要部構成を示す。この実施例では
波形処理回路の前段に演算増幅器86を用いたバッファ
10を挿入し、かつ出力調整回路4′として、第2図に
示した出力調整回路4とその前の差動回路32を、演算
増幅器84を共用して一体化した構成としている。他の
部分は先の実施例と同様である。
FIG. 4 shows the main structure of another embodiment. In this embodiment, a buffer 10 using an operational amplifier 86 is inserted before the waveform processing circuit, and the output adjustment circuit 4 and the differential circuit 32 in front of it shown in FIG. 2 are used as the output adjustment circuit 4'. The operational amplifier 84 is shared and integrated. Other parts are the same as in the previous embodiment.

この実施例によっても先の実施例と同様の効果が得られ
る。
This embodiment also provides the same effects as the previous embodiment.

本発明は上記した実施例に限られるものではない。例え
ば半導体流速検出素子の出力信号として、以上の例では
全て発熱用トランジスタのコレクタ電位を用いたが、発
熱用トランジスタの発熱に寄与する他の部分の電位、電
圧あるいは電流等を出力信号として用いることができる
。また温度測定用素子として例えばダイオード、発熱用
素子として例えば抵抗体等を用いることが可能である。
The present invention is not limited to the embodiments described above. For example, in all of the above examples, the collector potential of the heat generating transistor was used as the output signal of the semiconductor flow velocity detection element, but it is also possible to use the potential, voltage, current, etc. of other parts of the heat generating transistor that contribute to heat generation as the output signal. I can do it. Further, it is possible to use, for example, a diode as the temperature measuring element, and a resistor, etc. as the heating element.

その池水発明はその趣旨を逸脱し、ない範囲で種々変形
しで実施することができる。
The pond water invention can be implemented with various modifications without departing from the spirit thereof.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の流速検出器の概略構成を示
す図、第2図はその要部の具体的構成例を示す図、第3
図はこの実施例による流体検出器の応答特性を示す図、
第4図は他の実施例の流速検出器の要部構成を示す図、
第5図は従来の半導体流速検出器の構成例を示す図、第
6図はその応答特性を示ず図、第7図は従来の脈動除去
法により応答特性が損われる様子を示す図、第8図は従
来の脈動除去法の一例を示す図である。 1・・・半導体流速検出素子、2・・・駆動回路、3・
・・波形処理回路、4・・・出力調整回路、31・・・
脈動成分抽出回路、32・・・差動回路、5・・・基板
温度測定用トランジスタ、6・・・発熱用トランジスタ
、7・・・流体温度測定用トランジスタ。 出願人代理人 弁理士 鈴江武彦 J1rXJ M2図 第4図 時間 第7図
FIG. 1 is a diagram showing a schematic configuration of a flow velocity detector according to an embodiment of the present invention, FIG. 2 is a diagram showing a specific configuration example of the main part, and FIG.
The figure shows the response characteristics of the fluid detector according to this embodiment.
FIG. 4 is a diagram showing the main part configuration of a flow velocity detector of another embodiment,
FIG. 5 is a diagram showing an example of the configuration of a conventional semiconductor flow velocity detector, FIG. 6 is a diagram not showing its response characteristics, FIG. 7 is a diagram showing how the response characteristics are impaired by the conventional pulsation removal method, and FIG. FIG. 8 is a diagram showing an example of a conventional pulsation removal method. DESCRIPTION OF SYMBOLS 1... Semiconductor flow velocity detection element, 2... Drive circuit, 3...
...Waveform processing circuit, 4...Output adjustment circuit, 31...
Pulsating component extraction circuit, 32... Differential circuit, 5... Transistor for substrate temperature measurement, 6... Transistor for heat generation, 7... Transistor for fluid temperature measurement. Applicant's Representative Patent Attorney Takehiko Suzue J1rXJ M2 Figure 4 Time Figure 7

Claims (3)

【特許請求の範囲】[Claims] (1)半導体基板に発熱用素子と基板温度測定用素子が
集積形成された半導体流速検出素子と、測定すべき流体
の温度を測定する流体温度測定用素子を含み、この流体
温度測定用素子の出力と前記基板温度測定用素子の出力
を用いて前記検出素子を測定すべき流体の温度より一定
温度高くなるように前記発熱用素子を制御する駆動回路
とを備え、前記発熱用素子に流れて発熱に寄与する電流
またはこの電流に対応して変化する電位あるいは電圧を
検知することにより流速の測定を行なう半導体流速検出
器において、前記半導体流速検出素子の出力信号から脈
動成分のみを抽出する回路と、この回路で抽出された脈
動成分を前記半導体流速検出素子の出力信号から差引い
て流速検出信号を得る回路とを設けたことを特徴とする
半導体流速検出器。
(1) Includes a semiconductor flow rate detection element in which a heating element and a substrate temperature measurement element are integrated on a semiconductor substrate, and a fluid temperature measurement element that measures the temperature of the fluid to be measured; a drive circuit that controls the heat generating element so that the temperature of the detection element is a certain temperature higher than the temperature of the fluid to be measured using the output and the output of the substrate temperature measuring element; In a semiconductor flow velocity detector that measures flow velocity by detecting a current that contributes to heat generation or a potential or voltage that changes in response to this current, a circuit that extracts only a pulsating component from an output signal of the semiconductor flow velocity detection element. , and a circuit for obtaining a flow velocity detection signal by subtracting the pulsation component extracted by this circuit from the output signal of the semiconductor flow velocity detection element.
(2)前記半導体流速検出素子内の発熱用素子がトラン
ジスタである特許請求の範囲第1項記載の半導体流速検
出器。
(2) The semiconductor flow rate detector according to claim 1, wherein the heat generating element in the semiconductor flow rate detection element is a transistor.
(3)前記半導体流速検出素子内の基板温度測定用素子
がトランジスタまたはダイオードである特許請求の範囲
第1項記載の半導体流速検出器。
(3) The semiconductor flow rate detector according to claim 1, wherein the substrate temperature measuring element in the semiconductor flow rate detection element is a transistor or a diode.
JP60295049A 1985-12-25 1985-12-25 Semiconductor flow velocity detector Pending JPS62150167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60295049A JPS62150167A (en) 1985-12-25 1985-12-25 Semiconductor flow velocity detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60295049A JPS62150167A (en) 1985-12-25 1985-12-25 Semiconductor flow velocity detector

Publications (1)

Publication Number Publication Date
JPS62150167A true JPS62150167A (en) 1987-07-04

Family

ID=17815655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60295049A Pending JPS62150167A (en) 1985-12-25 1985-12-25 Semiconductor flow velocity detector

Country Status (1)

Country Link
JP (1) JPS62150167A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007205916A (en) * 2006-02-02 2007-08-16 Hitachi Ltd Flow measuring device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007205916A (en) * 2006-02-02 2007-08-16 Hitachi Ltd Flow measuring device

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