JPS62115834A - Semiconductor sealing device - Google Patents
Semiconductor sealing deviceInfo
- Publication number
- JPS62115834A JPS62115834A JP60256981A JP25698185A JPS62115834A JP S62115834 A JPS62115834 A JP S62115834A JP 60256981 A JP60256981 A JP 60256981A JP 25698185 A JP25698185 A JP 25698185A JP S62115834 A JPS62115834 A JP S62115834A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- inner cavity
- resin
- semiconductor device
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は放熱板露出型半導体装置を樹脂封止する半導
体封止装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention This invention relates to a semiconductor sealing device for resin-sealing a semiconductor device with an exposed heat sink.
従来の技術
従来のこの種の半導体封止装置は第３図に示すように上
金型１と下金型２に囲まれた空間内に半導体装置を保持
し、樹脂７で封止する構造になっていた。BACKGROUND ART A conventional semiconductor encapsulation device of this type has a structure in which a semiconductor device is held in a space surrounded by an upper mold 1 and a lower mold 2 and sealed with resin 7, as shown in FIG. It had become.
放熱板露出型半導体装置はパッケージの表面・に金属放
熱板が露出していなければならないので、第６図では下
金型２に放熱板５の表面が接する状態で樹脂封止が成さ
れている。この際放熱板表面に樹脂がまわり込むのを抑
制する目的で放熱板５は外部リード６と放熱板の一部に
設けた突起状のカメシ部５ａによって下金型２にある程
度の圧力で押し付けられる構造になっている。この他、
第７図のように、放熱板５のエッヂを下金型に押しつけ
て、放熱板表面のかなりの部分とはコンク９トしないよ
うに下金型２の中央部に凹みを設はブー構造もある。Since the heat sink exposed type semiconductor device must have a metal heat sink exposed on the surface of the package, resin sealing is performed with the surface of the heat sink 5 in contact with the lower mold 2 in FIG. 6. . At this time, the heat sink 5 is pressed against the lower mold 2 with a certain amount of pressure by the external lead 6 and a protruding cap 5a provided on a part of the heat sink in order to prevent the resin from going around the surface of the heat sink. It has a structure. In addition,
As shown in Figure 7, the edge of the heat dissipation plate 5 is pressed against the lower mold, and a recess is formed in the center of the lower mold 2 so as not to contact a considerable part of the surface of the heat dissipation plate. be.
発明が解決しようとする問題点
このような従来の放熱板露出型半導体装置の樹脂封止装
置では放熱板の表面にどうしても薄い樹脂皮膜が形成さ
れる。その例を示すのが第８図および第９図の外観図お
よび断面図である。この［゛ツに於いて放熱板５の表面
に周辺から薄い樹脂皮膜７ａが形成されている。この樹
脂皮膜７ａは半導体装置の熱伝導を妨げる不具合を生じ
たり、マーキングする際の支障にもなることは周知の通
りである。Problems to be Solved by the Invention In such a conventional resin sealing apparatus for a semiconductor device with an exposed heat sink, a thin resin film is inevitably formed on the surface of the heat sink. Examples of this are shown in the external view and cross-sectional view of FIGS. 8 and 9. In this case, a thin resin film 7a is formed on the surface of the heat sink 5 from the periphery. It is well known that this resin film 7a may cause problems such as interfering with heat conduction of the semiconductor device, and may also be a hindrance to marking.
第１０図はこのような樹脂皮膜が放熱板上に形成された
半導体装置を外部放熱板１ｏに取りつけた例を示してい
る。シリコンチップ８から発生した熱はいろいろな経路
を伝わって外部へ放熱される。一部は樹脂７を伝って外
部へ放熱され、また、別の一部は金線９と外部リード６
を伝わって外部へ放熱されるが、大部分は放熱板５から
外部放熱板１０へと放熱されるのである。ところが放熱
板５の表面に形成された薄い樹脂皮膜があると外部放熱
板１０との間に隙間ができ、放熱性を悪くすることにな
る。FIG. 10 shows an example in which a semiconductor device having such a resin film formed on a heat sink is attached to an external heat sink 1o. The heat generated from the silicon chip 8 is transmitted to the outside through various paths. A part of the heat is radiated to the outside through the resin 7, and another part is radiated to the outside through the gold wire 9 and the external lead 6.
Most of the heat is radiated from the heat sink 5 to the external heat sink 10. However, if there is a thin resin film formed on the surface of the heat sink 5, a gap will be created between it and the external heat sink 10, resulting in poor heat dissipation.
第１１図は第７図のＢ部分を拡大した図であり、放熱板
５の表面に滲み出だ薄い樹脂皮膜７ａが外部放熱板１Ｑ
と放熱板５との接触を妨げている状態を示している。こ
のような場合、通常とられる方法はこの樹脂皮膜７ａを
物理的に除去する方法である。半導体製造工程に於いて
この樹脂皮膜を除去する作業工程は厄介なものである。FIG. 11 is an enlarged view of part B in FIG.
This shows a state in which contact with the heat sink plate 5 is obstructed. In such a case, the usual method is to physically remove this resin film 7a. The process of removing this resin film in the semiconductor manufacturing process is troublesome.
問題点を解決するだめの手段
本発明は上記問題点を解決するため、下金型を２つのキ
ャビティ、即ち内側キャビティブロックと外側キャビテ
ィブロックとに分割し、この内側キャビティブロックの
先端を放熱板表面に輪状で加圧接触させ、樹脂が放熱板
表面へ滲み出すのを防ぐ構造を提供している。内側キャ
ビティ構成体の一部が放熱板表面の一部を確実に加圧接
触するように内側キャビティ構成体はフローティングキ
ャビティになっており、また内側キャビティ構成体は任
意に高さの調整ができるようにスペーサーが挿入される
。Means to Solve the Problems In order to solve the above problems, the present invention divides the lower mold into two cavities, namely an inner cavity block and an outer cavity block, and the tip of the inner cavity block is connected to the surface of the heat sink. This provides a structure that prevents the resin from seeping onto the surface of the heat sink by bringing it into pressure contact in a ring shape. The inner cavity structure is a floating cavity so that a part of the inner cavity structure is in pressure contact with a part of the surface of the heat sink, and the height of the inner cavity structure can be adjusted arbitrarily. A spacer is inserted.
作用
本発明によると、内側キャビティ構成体がフローティン
グ構造になっているので放熱板表面に確実に接触するよ
うに高さの調節ができ、フローティング式内側キャビテ
ィ構成体の下に挿入された高さ調整用のスペーサーが内
側キャビティ構成体の先端を放熱板表面に加圧接触させ
る際の圧力調整の作用も併わせて行うことから、樹脂が
放熱板表面の加熱接触面の内側へは滲み出ないしくみに
なっている。According to the present invention, since the inner cavity structure has a floating structure, its height can be adjusted to ensure reliable contact with the surface of the heat sink, and the height adjustment device inserted under the floating inner cavity structure The spacer also acts to adjust the pressure when the tip of the inner cavity structure is brought into pressure contact with the heat sink surface, so the resin does not ooze out inside the heating contact surface of the heat sink surface. It has become.
実施例
以下、本発明の一実施例を添付図面にもとづいて説明す
る。Embodiment Hereinafter, one embodiment of the present invention will be described based on the accompanying drawings.
第１図は放熱板露出型半導体装置を本発明実施例の封止
装置で樹脂封止した状態を簡略化して表わしだ要部断面
図である。半導体装置を構成する部品の一つである放熱
板５がその一部に設けられた突起状のかしめ接続部５＆
によって外部リード６と連結されている。FIG. 1 is a simplified cross-sectional view of a main part of a heat sink exposed type semiconductor device sealed with resin using a sealing device according to an embodiment of the present invention. A protruding caulking connection portion 5 & a heat sink 5, which is one of the components constituting a semiconductor device, is provided in a part thereof.
It is connected to the external lead 6 by.
封止装置に放熱板露出型半導体装置をセットし、止金型
１と第１下金型２ａとで型締めを行うと外部リード６が
強く保持される。When the semiconductor device with an exposed heat sink is set in the sealing device and the molding die 1 and the first lower molding die 2a are clamped, the external leads 6 are strongly held.
必然的帰結として、この外部リード６にかしめ接続部５
ａを通じて固定されている放熱板６は内側キャビティを
構成している第２下金型２ｂの先端に押し付けられるこ
とになる。この内側キャビティ構成用の第２下金型２ｂ
は独立した、いわゆるフローティング構造になっている
。そしてこの内側キャビティ構成用第２下金型２ｂと金
型取付は台４との間には空間がありここにスペーサー３
が挿入される。このスペーサー３の役目は内側キャビテ
、イ構成用第２下金型２ｂの高さを調整することにある
。放熱板５の表面高さには、しばしば、ばらつきがある
。従って内側キャビティ構成用第２下金型２ｂの先端部
が確実に放熱板５の表面に接触することが重要である。As a natural consequence, the caulking connection part 5 is attached to this external lead 6.
The heat dissipation plate 6 fixed through the hole a is pressed against the tip of the second lower mold 2b constituting the inner cavity. The second lower mold 2b for configuring this inner cavity
is an independent, so-called floating structure. There is a space between the second lower mold 2b for forming the inner cavity and the mold mounting stand 4, and there is a spacer 3 in this space.
is inserted. The role of this spacer 3 is to adjust the height of the second lower mold 2b for forming the inner cavity. The surface height of the heat sink 5 often varies. Therefore, it is important that the tip of the second lower mold 2b for forming the inner cavity reliably contacts the surface of the heat sink 5.
この意味でもスペーサー３の機能によって内側キャビテ
ィ構成用第２下金型２ｂの高さを自由に調節することが
できるようにしておくのがよい。放熱板５の表面にコン
タクトする内側キャビティ構成用第２下金型２ｂの先端
部圧力は外部リードのスプリング圧並びにスペーサーの
スプリング圧によって加減される。In this sense as well, it is preferable that the height of the second lower mold 2b for forming the inner cavity can be freely adjusted by the function of the spacer 3. The pressure at the tip of the second lower mold 2b for forming the inner cavity, which contacts the surface of the heat sink 5, is adjusted by the spring pressure of the external lead and the spring pressure of the spacer.
第１図に於いて、上金型１と第１の下金型２ａ並びに放
熱板５で囲まれた外側キャビティ空間７に注入された樹
脂は内側キャビティ構成用下金型２ｂの先端で阻止さｎ
ｌこの範囲から外み出すことはない。第１図のＡ部を拡
大したものが第２図である。放熱板５の表面に内側キャ
ビティ構成用第２下金型２ｂの先端部分が確実にコンタ
クトし、同時に圧力を加え合っているため、樹脂７は放
熱板表面下方空間１１の方へは滲み出ないしくみになっ
ている。In FIG. 1, the resin injected into the outer cavity space 7 surrounded by the upper mold 1, the first lower mold 2a, and the heat sink 5 is blocked by the tip of the lower mold 2b for forming the inner cavity. n
l Never go outside this range. FIG. 2 is an enlarged view of section A in FIG. 1. The tip of the second lower mold 2b for forming the inner cavity is in reliable contact with the surface of the heat sink 5, and pressure is applied at the same time, so the resin 7 does not ooze out toward the space 11 below the heat sink surface. It's structured.
第３図は本発明の実施例による樹脂封止装置で封止され
た放熱板露出型半導体装置の部分拡大図である。第１図
の場合と天地が逆になっているが、放熱板５には、シリ
コンチップ８を載置し、金線９で外部リード６と接続さ
れている。樹脂７は内側キャビティの先端部が放熱板６
の周辺部５ｂを押さえていたので放熱板表面へは滲み出
していない。FIG. 3 is a partially enlarged view of a heat sink exposed type semiconductor device sealed with a resin sealing device according to an embodiment of the present invention. Although the top and bottom are reversed from the case in FIG. 1, a silicon chip 8 is placed on the heat sink 5 and connected to the external lead 6 with a gold wire 9. The resin 7 has a heat dissipation plate 6 at the tip of the inner cavity.
Since the peripheral portion 5b of the heat sink was pressed down, it did not seep out onto the surface of the heat sink.
第４図は上記半導体装置を外部放熱板１ｏに取付けだ状
態を示す断面図である。この半導体装置の放熱板表面に
樹脂皮膜が形成されていないので外部放熱板に密着して
取付けることができる。FIG. 4 is a sectional view showing the semiconductor device attached to the external heat sink 1o. Since no resin film is formed on the surface of the heat sink of this semiconductor device, it can be attached closely to an external heat sink.
第５図は本発明実施例の封止装置で樹脂封止された放熱
板露出型半導体装置の外観斜視図である。FIG. 5 is an external perspective view of a heat sink exposed type semiconductor device sealed with resin using the sealing device according to the embodiment of the present invention.
放熱板表面の所定の領域外へは樹脂皮膜が滲み出してい
ないことが理解できる。It can be seen that the resin film does not seep out outside the predetermined area on the surface of the heat sink.
第１図〜第５図は半導体装置を構成する放熱板が下金型
に対向する構造例を示しているが、この逆に止金型に対
向するようにセットすることも可能である。この場合、
止金型の方に内側キャビティと外側キャビティを分離し
て設け、内側キャビティをフローティング構造にするの
である。Although FIGS. 1 to 5 show an example of a structure in which the heat dissipation plate constituting the semiconductor device faces the lower mold, it is also possible to set it so that it faces the stopper mold. in this case,
An inner cavity and an outer cavity are provided separately in the stopper mold, and the inner cavity is made into a floating structure.
発明の効果
本発明は放熱板露出型半導体装置を樹脂封止した場合、
放熱板表面に枠状、或は環状に加圧接触している内側キ
ャビティがストッパーとなり樹脂が放熱板上へ滲み出る
のを防ぐ効果を発揮する。Effects of the Invention The present invention provides the following advantages when a heat sink exposed type semiconductor device is sealed with resin.
The inner cavity, which is in frame-shaped or annular pressure contact with the surface of the heat sink, acts as a stopper and has the effect of preventing the resin from seeping onto the heat sink.
その結果従来例のように放熱板上に生じた薄い樹脂皮膜
を除去する作業は不要となり、外部放熱板を取付けた場
合でも放熱性が非常に良くなる。As a result, unlike the conventional example, there is no need to remove the thin resin film formed on the heat sink, and even when an external heat sink is attached, heat dissipation is very good.
第１図は本発明の一実施例による半導体封止装置を示す
要部断面図、第２図はその一部分の拡大断面図、第３図
は第１図で樹脂封止された半導体装置の部分拡大断面図
、第４図はこの半導体装置を外部放熱板に取付けた断面
図、第５図は上記実施例の封止装置で製造された放熱板
露出型半導体装置の外観斜視図、第６図と第７図は従来
の封止装置の要部断面図、第８図はこのような従来型封
止装置で製造された放熱板露出型半導体装置の外観斜視
図、第９図はその断面図、第１０図はこの半導体装置を
外部放熱板へ取付けた状態を示す断面図、第１１図はこ
の部分拡大断面図である。
１ ・・・上金型、２・・・・・・下金型、２Ｎ・・・
・・・外側キャビティ構成用第１下金型、２ｂ・−・・
・内側キャビティ構成用第２下金型、３・・・スペーサ
ー、４・・・金型取付は台、６・・・放熱板、５ａ ・
・・・かしめ接続部、５ｂ・・・・内側キャビティ先端
接触部、６・・外部リード、了・・・・・樹脂、７２Ｌ
−・・樹脂皮膜、８−・・・・シリコンチップ、９・・
・・金線、１０・・・・・外部放熱板、１１・・・・放
熱板表面下方空間。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
第２下金翌
第３図
乙
第４図
第５図
γ ５
第６図
／ ５誌
、５２
邪７図 １
５工
５ ？
第８図
第９図
匁 ５FIG. 1 is a sectional view of a main part of a semiconductor encapsulation device according to an embodiment of the present invention, FIG. 2 is an enlarged sectional view of a portion thereof, and FIG. 3 is a portion of the semiconductor device sealed with resin in FIG. 1. FIG. 4 is an enlarged cross-sectional view, and FIG. 4 is a cross-sectional view of this semiconductor device attached to an external heat sink. FIG. 5 is an external perspective view of the heat sink exposed semiconductor device manufactured using the sealing device of the above embodiment. 7 is a cross-sectional view of a main part of a conventional sealing device, FIG. 8 is an external perspective view of a heat sink exposed type semiconductor device manufactured using such a conventional sealing device, and FIG. 9 is a cross-sectional view thereof. , FIG. 10 is a sectional view showing this semiconductor device attached to an external heat sink, and FIG. 11 is a partially enlarged sectional view thereof. 1... Upper mold, 2... Lower mold, 2N...
...First lower mold for outer cavity configuration, 2b...
・Second lower mold for inner cavity configuration, 3... Spacer, 4... Mold mounting stand, 6... Heat sink, 5a ・
...Caulking connection part, 5b...Inner cavity tip contact part, 6...External lead, End...Resin, 72L
-...Resin film, 8-...Silicon chip, 9...
...Gold wire, 10...External heat sink, 11...Space below the surface of the heat sink. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 2 Lower price Figure 3 Otsu Figure 5 Figure γ 5 Figure 6 / 5 magazine, 52 Evil 7 Figure 1 5 Engineering 5? Figure 8 Figure 9 Momme 5
Claims (3)
分割されており、非注入内側キャビティブロックと樹脂
注入用外側キャビティブロックとから構成されている半
導体封止装置。(1) A semiconductor sealing device in which a part of the bottom surface of the cavity on the side where the heat sink is exposed is divided, and is composed of a non-injection inner cavity block and a resin injection outer cavity block.
一部に輪状で接した構造の特許請求第１項記載の半導体
封止装置。(2) The semiconductor sealing device according to claim 1, wherein the tip portion of the inner cavity structure contacts a part of the surface of the heat sink in a ring shape.
スペーサーの介在可能な構造になっている特許請求第１
項記載の半導体封止装置。(3) Patent claim 1, which has a structure in which a spacer can be inserted so that the height of the inner cavity structure can be adjusted.
Semiconductor sealing device described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60256981A JPS62115834A (en) | 1985-11-15 | 1985-11-15 | Semiconductor sealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60256981A JPS62115834A (en) | 1985-11-15 | 1985-11-15 | Semiconductor sealing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62115834A true JPS62115834A (en) | 1987-05-27 |
Family
ID=17300062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60256981A Pending JPS62115834A (en) | 1985-11-15 | 1985-11-15 | Semiconductor sealing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62115834A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622873A (en) * | 1994-01-24 | 1997-04-22 | Goldstar Electron Co., Ltd. | Process for manufacturing a resin molded image pick-up semiconductor chip having a window |
| US5959349A (en) * | 1997-02-25 | 1999-09-28 | Micron Technology, Inc. | Transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6117797A (en) * | 1998-09-03 | 2000-09-12 | Micron Technology, Inc. | Attachment method for heat sinks and devices involving removal of misplaced encapsulant |
| US6297548B1 (en) | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
| US6297960B1 (en) | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Heat sink with alignment and retaining features |
| US6444501B1 (en) | 2001-06-12 | 2002-09-03 | Micron Technology, Inc. | Two stage transfer molding method to encapsulate MMC module |
| JP2009140951A (en) * | 2007-12-03 | 2009-06-25 | Denso Corp | Method of manufacturing electronic apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5625779A (en) * | 1979-08-08 | 1981-03-12 | Hitachi Ltd | Crt display unit |
-
1985
- 1985-11-15 JP JP60256981A patent/JPS62115834A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5625779A (en) * | 1979-08-08 | 1981-03-12 | Hitachi Ltd | Crt display unit |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5622873A (en) * | 1994-01-24 | 1997-04-22 | Goldstar Electron Co., Ltd. | Process for manufacturing a resin molded image pick-up semiconductor chip having a window |
| US6373132B2 (en) | 1997-02-25 | 2002-04-16 | Micron Technology, Inc. | Semiconductor die with attached heat sink and transfer mold |
| US5959349A (en) * | 1997-02-25 | 1999-09-28 | Micron Technology, Inc. | Transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6001672A (en) * | 1997-02-25 | 1999-12-14 | Micron Technology, Inc. | Method for transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6869811B2 (en) | 1997-02-25 | 2005-03-22 | Micron Technology, Inc. | Methods for transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6249050B1 (en) | 1997-02-25 | 2001-06-19 | Micron Technology, Inc. | Encapsulated transfer molding of a semiconductor die with attached heat sink |
| US6583504B2 (en) | 1997-02-25 | 2003-06-24 | Micron Technology, Inc. | Semiconductor die with attached heat sink and transfer mold |
| US6403387B1 (en) | 1997-02-25 | 2002-06-11 | Micron Technology | Method and apparatus for transfer molding encapsulation of a semiconductor die with attached heat sink |
| US6760224B2 (en) | 1998-06-30 | 2004-07-06 | Micron Technology, Inc. | Heat sink with alignment and retaining features |
| US6858926B2 (en) | 1998-06-30 | 2005-02-22 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
| US7285442B2 (en) | 1998-06-30 | 2007-10-23 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
| US6297960B1 (en) | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Heat sink with alignment and retaining features |
| US6650007B2 (en) | 1998-06-30 | 2003-11-18 | Micron Technology, Inc. | Stackable ceramic fbga for high thermal applications |
| US6525943B2 (en) | 1998-06-30 | 2003-02-25 | Micron Technology, Inc. | Heat sink with alignment and retaining features |
| US6297548B1 (en) | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
| US6451709B1 (en) | 1998-09-03 | 2002-09-17 | Micron Technology, Inc. | Methodology of removing misplaced encapsulant for attachment of heat sinks in a chip on board package |
| US6229204B1 (en) | 1998-09-03 | 2001-05-08 | Micron Technology, Inc. | Chip on board with heat sink attachment |
| US6806567B2 (en) | 1998-09-03 | 2004-10-19 | Micron Technology, Inc. | Chip on board with heat sink attachment and assembly |
| US6117797A (en) * | 1998-09-03 | 2000-09-12 | Micron Technology, Inc. | Attachment method for heat sinks and devices involving removal of misplaced encapsulant |
| US6432840B1 (en) | 1998-09-03 | 2002-08-13 | Micron Technology, Inc. | Methodology of removing misplaced encapsulant for attachment of heat sinks in a chip on board package |
| US6538311B2 (en) | 2001-06-12 | 2003-03-25 | Micron Technology, Inc. | Two-stage transfer molding method to encapsulate MMC module |
| US6730995B2 (en) | 2001-06-12 | 2004-05-04 | Micron Technology, Inc. | Two-stage transfer molding device to encapsulate MMC module |
| US6764882B2 (en) | 2001-06-12 | 2004-07-20 | Micron Technology, Inc. | Two-stage transfer molding method to encapsulate MMC module |
| US6444501B1 (en) | 2001-06-12 | 2002-09-03 | Micron Technology, Inc. | Two stage transfer molding method to encapsulate MMC module |
| US7279781B2 (en) | 2001-06-12 | 2007-10-09 | Micron Technology, Inc. | Two-stage transfer molding device to encapsulate MMC module |
| US7288441B2 (en) | 2001-06-12 | 2007-10-30 | Micron Technology, Inc. | Method for two-stage transfer molding device to encapsulate MMC module |
| JP2009140951A (en) * | 2007-12-03 | 2009-06-25 | Denso Corp | Method of manufacturing electronic apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100428271B1 (en) | Integrated circuit package and its manufacturing method | |
| JPH03136355A (en) | Semiconductor device with heat sink | |
| JPH04102338A (en) | Method and apparatus for manufacture of resin-sealed semiconductor device | |
| JPS62115834A (en) | Semiconductor sealing device | |
| KR20190053783A (en) | Resin sealing mold and method of manufacturing semiconductor device | |
| JPH04352435A (en) | Mold for manufacturing hollow semiconductor pressure sensor sealed with resin | |
| JP2517691B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH04199664A (en) | Semiconductor device | |
| KR870009453A (en) | Resin Sealed Semiconductor Device | |
| JP2973506B2 (en) | Method of manufacturing resin-encapsulated semiconductor device | |
| JP3128976B2 (en) | Method for manufacturing semiconductor device | |
| JPH0732216B2 (en) | Semiconductor device | |
| JPH0582573A (en) | Resin sealed type semiconductor device mold | |
| JPH04129253A (en) | Semiconductor package | |
| JP3747991B2 (en) | Manufacturing method of semiconductor device | |
| JPH0590315A (en) | Resin molding die | |
| JPH04246847A (en) | Package of semiconductor integrated circuit | |
| JP3185354B2 (en) | Method for manufacturing semiconductor device and resin sealing device for semiconductor device | |
| JPS61194861A (en) | Resin sealed type semiconductor device | |
| JP2000036556A (en) | Semiconductor device and manufacture thereof | |
| JPH04313036A (en) | Hollow-type resin sealed semiconductor pressure sensor | |
| JP2936679B2 (en) | Manufacturing method of resin-sealed semiconductor device and sealing mold | |
| JPS5978537A (en) | Manufacture of resin-sealed semiconductor device | |
| JPH05326587A (en) | Method and device for sealing resin-sealed-type semiconductor device | |
| JPH07193179A (en) | Lead frame |