JPS6129185B2 - - Google Patents

Description

[Detailed description of the invention] The present invention relates to a one-dimensional imaging device.

A one-dimensional imaging device is generally of a dual channel type in which a plurality of light receiving elements arranged in a line are distributed and combined into two CCD type charge transfer element rows.

FIG. 1 schematically shows a conventional dual channel type one-dimensional imaging device. In the figure, 1 is a one-dimensional optical sensor section for sensing incident light,
A plurality of M light receiving elements a, a, . . . that generate charges according to the amount of incident light are arranged in a line. 2 is an M/2 bit CCD for reading and transferring the charge of the odd-numbered light receiving elements a1, a1... of the optical sensor section 1.
The first transfer register section of the transfer register includes first electrodes x1, x1, . . . to which a clock pulse φ1 is applied, and second electrodes x2, x2 to which a clock pulse φ2 is applied.
..., and each electrode pair x1, x2 constitutes one bit unit. and the first electrode x1,
x1... and the odd-numbered light receiving elements a1, a1... of each sensor section 1 are coupled. Reference numeral 3 denotes an M/2-bit CCD type second transfer register section for reading and transferring charges of the even-numbered light receiving elements a2, a2... of the optical sensor section 1, and is connected to the first transfer register section 2. Similarly, first electrodes y1, y1... and second electrodes y2, y2... are provided, and each electrode pair y
1 and y2 constitute one bit unit. The first electrodes y1, y1, . . . and the even-numbered light receiving elements a2, a2, . . . of the optical sensor section 1 are coupled. 4, 4 are the above-mentioned optical sensor part 1, the first, and the second
It is a transfer gate provided between the transfer register sections 2 and 3, and is a transfer gate provided between the odd-numbered light receiving elements a1, a1, . . . of the optical sensor section 1 to the first transfer register section 2.
from the even-numbered light receiving elements a2, a2... of the optical sensor section 1 to the first electrodes y1, y1 of the second transfer register section 3.
A clock pulse φG is applied to transfer the accumulated charge to the ... position.

FIG. 2 is a timing diagram of clock pulses φ1, φ2, and φG used in the conventional device shown in FIG. During period T1 in the figure, photoelectric conversion is performed by both light receiving elements a1, a2, and so on between the optical sensors 1.
In the T2 period, both light-receiving elements a in the previous T1 period
1..., a2..., the charges accumulated in the first and second
A positive pulse P of the clock pulse φG is applied to transfer the data to the conversion register sections 2 and 3. Furthermore, the accumulated charges transferred to the first and second transfer register sections 2 and 3 during the T2 period are then transferred to the first and second transfer register sections 2 and 3 by clock pulses φ1 and φ2 during the T1 period. All data is transferred and read externally.

In the conventional one-dimensional imaging device described above, each electrode x1..., x2..., y1 of both transfer register sections 2, 3
..., y2... are each shown as a single-layer structure in Fig. 1 for convenience of explanation, but in reality, they are constructed by two stages of electrodes that are shifted in the thickness direction of this device. The transfer register sections 2 and 3 are already at the limit of integration. Therefore, this entire device, which has a configuration in which only two light-receiving elements a and a can be arranged in a 1-bit length consisting of the electrode pair x1, x2, y1, and y2 of the transfer registers 2 and 3, can be integrated and expanded to reduce the amount of light per unit length. There is a limit to increasing the number of light receiving elements a, a, . . . . That is, there is a limit to increasing the resolution of one-dimensional images obtained with such an apparatus.

The present invention has been made in view of these points,
By making it possible to arrange four light-receiving elements a and a for one bit length of the transfer register sections 2 and 3, and devising a movement method for both transfer register sections 2 and 3, the light reception of the sensor section 1 is The present invention provides a one-dimensional imaging device in which the number of elements a, a, . . . per unit length is doubled.

FIG. 3 schematically shows a one-dimensional imaging device of the present invention. In the figure, reference numeral 11 denotes an optical sensor section similar to the conventional device shown in FIG.
The number of light receiving elements b, b, . . . arranged one-dimensionally per unit length is twice the number of light receiving elements a, a, . That is, four light receiving elements a, a, a, a, . . . are arranged for each bit length of the transfer register sections 2, 3. 12,
13 is also a first transfer register section and a second transfer register section, as in the conventional device shown in FIG.
In the transfer register section 12, the first electrodes x1, x1, . and the second electrodes x2, x2... to which the clock pulse φ2' is applied and the second electrodes x2, x2... of the optical sensor section 11
4m+3rd third light receiving elements b3, b3 . . . are connected via a transfer gate 14. Similarly, the second transfer register section 13 also has the first electrodes y1, y1... and the 4m+2nd second light receiving element b.
2, b2... are coupled via the transfer gate 14, and the second electrodes y2, y2... and the 4mth fourth electrode
The light receiving elements b4, b4, . . . are connected via a transfer gate 14. Reference numerals 14, 14 are transfer gates basically similar to those in the conventional device shown in FIG. , b2 . . . to the first electrodes y1, y1 . . . and a positive pulse P2 for transferring the accumulated charge from the light receiving element b4 to the second electrode y2 of the second transfer register section 13.

FIG. 4 is a timing diagram of clock pulses φ1', φ2', and φG' used in the above-described device of the present invention. In the same figure, the clock pulse φG′ is turned on.
When the positive pulse P1 of the state appears, the clock pulse φ1' is in the ON state, and the clock pulse φ
2' is in the OFF state, so the optical sensor section 1
The first and second of the plurality of light receiving elements b, b...
The charges accumulated in the light receiving elements b1..., b2... are transferred to the first and second gates through the open transfer gates 14, 14, respectively.
The first electrodes x1, y1, etc. of the transfer register sections 12, 13 are introduced to allow charge accumulation. Also, when the positive pulse P2 in the ON state appears in the clock pulse φG', the clock pulse φ1' is in the OFF state and the clock pulse φ2' is in the ON state, and one of the plurality of light receiving elements b, b... , the third and fourth light receiving elements b3..., b4... can be stored in the first and second transfer register sections 12, 13, respectively, via the open transfer gates 14, 14. It is introduced into two electrodes x2..., y2.... On the other hand, in the T1' period, photoelectric conversion is performed in all the light receiving elements b, b... of the optical sensor section 11, and the first and second transfer register sections 1
2 and 13, the positive pulse P immediately before this T1' period
During the T4' period in which 1 appears on the clock pulse φG', the accumulated charges transferred from the first and second light receiving elements b1, b2, . Also, T
In the 3' period, photoelectric conversion similar to that in the T1' period is performed in all the light receiving elements b, b... of the optical sensor section 11, and the first and second transfer register sections 1
2 and 13, the positive pulse P immediately before this T3' period
During the T2' period in which 2 appears on the clock pulse φG', the stored charges transferred from the third and fourth light receiving elements b3, b4, . . . are read out to the outside by the clock pulses φ1', φ2'. Therefore, the first
Transfer register section 12 and second transfer register section 13
By further superimposing the signal obtained by superimposing the charge signals from and for the T1' period and the T2' period, an image signal for one row of the photosensor section 11 is obtained.

As is clear from the above description, the one-dimensional imaging device of the present invention includes a first light receiving element coupled to a first electrode of a first charge transfer element array via a transfer gate, and a second charge transfer element. a second light receiving element coupled to a first electrode of the column via a transfer gate; a third light receiving element coupled to a second electrode of the first charge transfer element column via a transfer gate; A fourth light-receiving element is coupled to a second electrode of a charge transfer element array through a transfer gate, and four elements are arranged periodically corresponding to the bit period of the charge transfer element array, and the first light-receiving element a pre-operation of reading and transferring the charges stored in the element group and the second light-receiving element group; a post-operation of reading and transferring the charges stored in the third light-receiving element group and the fourth light-receiving element group; Since the imaging operation for one row is completed with the following two operations, compared to the conventional device which could only arrange two light receiving elements corresponding to one bit of the charge transfer element row, four light receiving elements can be arranged corresponding to one bit of the charge transfer element row. It becomes possible to arrange the light-receiving elements.
That is, the number of light receiving elements per unit length can be doubled without integrating or increasing the number of charge transfer element arrays. Therefore, according to the apparatus of the present invention, a one-dimensional image with excellent resolution can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing a conventional one-dimensional imaging device.
FIG. 2 is a timing diagram of clock pulses used in a conventional one-dimensional imaging device, FIG. 3 is a schematic diagram showing the one-dimensional imaging device of the present invention, and FIG. 4 is a timing diagram of clock pulses used in the one-dimensional imaging device of the present invention. This is a timing diagram. 1, 11... Optical sensor section, 2, 12... First transfer register section, 3, 13... Second transfer register section, 4, 14... Transfer gate, b1, b2, b
3, b4...first, second, third, fourth light receiving elements,
x1, y1...first electrode, x2, y2...second electrode.

Claims (1)

[Scope of Claims] 1. A one-dimensional array of light receiving elements, first and second charge transfer element arrays having a plurality of bits provided along both sides of the light receiving element array, and both charge transfer elements. In a one-dimensional imaging device consisting of two transfer gates provided between an element row and a light-receiving element row and operating integrally, clock pulses are applied complementary to each of the two charge transfer element rows and are alternately applied. The first electrode and the second electrode, which are in a state where charge can be accumulated, are arranged alternately.
A set of electrode pairs constitutes one bit, and the light receiving element array includes a first light receiving element coupled to a first electrode of the first charge transfer element array via the transfer gate, and a first light receiving element coupled to the first electrode of the first charge transfer element array via the transfer gate; a second light receiving element coupled to a first electrode of the charge transfer element array via the transfer gate; and a third light receiving element coupled to a second electrode of the first charge transfer element array via the transfer gate. Four elements, each consisting of a light receiving element and a fourth light receiving element coupled to the second electrode of the second charge transfer element row via the transfer gate, correspond to the bit period of both charge transfer element rows. By opening the transfer gate with the first electrodes of the first and second charge transfer element arrays in a charge storage enabled state, the first light receiving element group and the second light receiving element array are arranged periodically. A pre-operation for introducing charges stored in the light receiving element group and transferring and outputting them, and opening the transfer gate by setting the second electrodes of the first and second charge transfer element arrays in a state in which charges can be accumulated. Due to circumstances, the third
2. A post-operation in which the charges stored in the photodetector group and the fourth photodetector group are transferred and output.
A one-dimensional imaging device characterized by completing one row of imaging operations in one motion.