JPS61288069A - Diamond-like carbon film forming device - Google Patents

Diamond-like carbon film forming device

Info

Publication number
JPS61288069A
JPS61288069A JP60128099A JP12809985A JPS61288069A JP S61288069 A JPS61288069 A JP S61288069A JP 60128099 A JP60128099 A JP 60128099A JP 12809985 A JP12809985 A JP 12809985A JP S61288069 A JPS61288069 A JP S61288069A
Authority
JP
Japan
Prior art keywords
carbon
diamond
film forming
anode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60128099A
Other languages
Japanese (ja)
Other versions
JPH062944B2 (en
Inventor
Kunihiro Nagao
長尾 邦廣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP60128099A priority Critical patent/JPH062944B2/en
Publication of JPS61288069A publication Critical patent/JPS61288069A/en
Publication of JPH062944B2 publication Critical patent/JPH062944B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605Carbon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To improve the wear resistance, insulation characteristic and film forming speed of a film by forming the film of diamond-like carbon on a substrate disposed on a cathode by utilizing the arc discharge of an anode carbon rod as a carbon supply source. CONSTITUTION:Gaseous H2 is introduced into a film forming chamber 1 the inside of which is evacuated to a vacuum. An electric power source 7 is connected between the cathode 4 and the anode 6 to impress DC electricity thereto. An electric power source 11 is connected to the anode 6 consisting of >=1 pairs of carbon bodies 9, 10 which are spaced from each other to discharge the arc. The carbon is gasified and ionized by the arc discharge. The ions are accelerated by the effect of the electric field and are transferred onto the substrate 5 so that the diamond-like carbon film is formed together with hydrogen on the substrate 5.

Description

【発明の詳細な説明】 〔技術分野〕 本発明はダイヤモンド様カーボンの成膜装置に関する。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a diamond-like carbon film forming apparatus.

〔従来技術とその問題点〕[Prior art and its problems]

ダイヤモンド様カーボンの製造には種々の方法が提案さ
れており1また一部実用化されている。
Various methods have been proposed for producing diamond-like carbon, and some of them have been put into practical use.

例えばイオンブレーティング法やイオンビームスパッタ
リング法などがある。イオンブレーティングでは1気密
成膜室を排気し、メタン等の炭化水素ガスを炭素源とし
て導入し、またダングリングボンド置換用として水素ガ
スを導入し、これらのガスを加熱分解して活性化し、こ
れから基板上に析出させてダイヤモンド様カーボンの成
膜を行う。
Examples include ion brating method and ion beam sputtering method. In ion blating, one airtight film formation chamber is evacuated, hydrocarbon gas such as methane is introduced as a carbon source, and hydrogen gas is introduced to replace dangling bonds, and these gases are thermally decomposed and activated. From now on, diamond-like carbon will be deposited on the substrate to form a film.

この方法による成膜速度は低く、通常600〜800オ
ンダスト田−五/分程度であるに過ぎない。これは炭化
水素ガスの化学的な分解を利用しているためである。ま
た、装置の構造も複雑になる欠点があった。
The film formation rate by this method is low, usually only about 600 to 800 m/min. This is because chemical decomposition of hydrocarbon gas is used. Furthermore, there is a drawback that the structure of the device becomes complicated.

〔発明の目的〕[Purpose of the invention]

従って1本発明の目的はダイヤモンド様カーボンの能率
の良い成膜装置を提供することにある。
Therefore, an object of the present invention is to provide an efficient film forming apparatus for diamond-like carbon.

本発明の他の目的は構造が単純なダイヤモンド様カーボ
ン成膜装置を提供することである。
Another object of the present invention is to provide a diamond-like carbon film forming apparatus with a simple structure.

〔発明の概要〕[Summary of the invention]

本発明は、気密成膜室に水素ガス源と排気手段とを結合
し、該成膜室内には成膜基板を支持した陰極を設け、前
記基板に対向して陽極を配置し、これらの陽極及び陰極
を電源の正負側にそれぞれ接続して成る成膜装置におい
て、陽極は少くとも一対の対向した炭素体より成り、前
記炭素体にはそれらの間にアーク放電を生じさせる電源
が接続されていることを特徴とする、ダイヤモンド様カ
ーボン成膜装置である。
The present invention combines a hydrogen gas source and exhaust means in an airtight film formation chamber, provides a cathode supporting a film formation substrate in the film formation chamber, arranges an anode opposite to the substrate, and disposes these anodes and a film forming apparatus in which a cathode is connected to the positive and negative sides of a power source, respectively, the anode is composed of at least a pair of carbon bodies facing each other, and a power source is connected to the carbon body to cause an arc discharge between them. This is a diamond-like carbon film forming apparatus characterized by:

本発明によると、炭化水素を炭素原料として導入しない
ため、成膜室の真空は適度に調整しうる。
According to the present invention, since hydrocarbons are not introduced as carbon raw materials, the vacuum in the film forming chamber can be adjusted appropriately.

またアーク放電により炭素イオンを多量に形成すること
ができるので、ダイヤモンド様カーボンの成膜速度を上
げることができる。さらに、ガスフロヤが少ないので膜
厚分布が均一になる。
Further, since a large amount of carbon ions can be formed by arc discharge, the rate of film formation of diamond-like carbon can be increased. Furthermore, since there is less gas flow, the film thickness distribution becomes uniform.

以下に本発明の成膜装置を実施例に関連して詳しく説明
する。
The film forming apparatus of the present invention will be described in detail below with reference to Examples.

〔実施例の説明〕 本明細書でダイヤモンド様カーボンとは、微小部分でダ
イヤモンド構造を有するカーボンのことであり、電気絶
縁性を表わすエネルギーギャップEgが大きく1また硬
度が高い物質である。この物質は電子素子等の電気絶縁
膜や耐摩耗性保護膜などに広<廟いつる。ダイヤモンド
様カーボンはできるだけ均一な膜状に大きいt&膜速度
で形成できることが望ましい61本発明者は炭素供給源
として炭素棒のアーク放電を利用することでこのような
要請に応えることができることを見出した。
[Description of Examples] In this specification, diamond-like carbon refers to carbon that has a diamond structure in minute portions, and is a substance that has a large energy gap Eg representing electrical insulation, and has high hardness. This substance is widely used in electrical insulating films and wear-resistant protective films for electronic devices. It is desirable that diamond-like carbon can be formed into a film as uniform as possible at a high t & film speed.61 The present inventor has discovered that such a request can be met by using arc discharge of a carbon rod as a carbon supply source. .

第1図は本発明の成膜装置の概略図を示す。成膜室1は
気密に形成されており、弁2を介して水素ガス源に接続
されている。また弁5を介して排気〆ンプに接続されて
いる。成膜室1の内部には陰極4が配置されており、そ
の面に成膜基板5が取付けられる・基板5に対向する位
置には炭素体を向い合せた陽極6が配置されており、こ
れらの陽極6及び陰極4は電源7の正負側へそれぞれ接
続されている。基板5の近くにはヒータ8が設けてあり
、基板のガス出しに用いられる。
FIG. 1 shows a schematic diagram of a film forming apparatus of the present invention. The film forming chamber 1 is formed airtight and is connected to a hydrogen gas source via a valve 2. It is also connected to an exhaust pump via a valve 5. A cathode 4 is arranged inside the film-forming chamber 1, and a film-forming substrate 5 is attached to the surface of the cathode 4.An anode 6 with carbon bodies facing each other is arranged at a position facing the substrate 5. An anode 6 and a cathode 4 are connected to the positive and negative sides of a power source 7, respectively. A heater 8 is provided near the substrate 5 and is used to vent gas from the substrate.

陽極6は対向して設けた炭素体9.1oより成つており
・これらの炭素体9.100間には電源11が接続され
ている。炭素体9.10の対向端は好ましくは一方を尖
端とし、他方を日大端とする。炭素体9.10の間に通
電するとアーク放電を生じ、その熱で炭素体9.100
対向端は蒸発し、イオン化する。炭素体9.10は消耗
性であるから、適当な送り装置で炭素棒の間隔を一定に
保つことが望ましい。
The anode 6 is made up of carbon bodies 9.1o arranged opposite to each other, and a power source 11 is connected between these carbon bodies 9.100. The opposing ends of the carbon body 9.10 are preferably one pointed end and the other end. When electricity is applied between carbon bodies 9.10, arc discharge occurs, and the heat causes carbon bodies 9.100
The opposite end evaporates and ionizes. Since the carbon bodies 9,10 are consumable, it is desirable to maintain a constant spacing of the carbon rods with a suitable feeding device.

炭素蒸気の量は炭素体の数を増やすことにより増大しつ
る。第2図はその1例を示すもので、金属ホルダー12
.13にそれぞれ同数の炭素棒9.91・94及び10
.101・101を保持させ、ラック−ビニオン14で
それらの距離をmaする。
The amount of carbon vapor increases by increasing the number of carbon bodies. FIG. 2 shows an example of this, in which the metal holder 12
.. 13 and the same number of carbon rods 9, 91, 94 and 10, respectively.
.. 101 and 101 are held, and the distance between them is measured using the rack-binion 14.

炭素体の代りに他の形態の陽極を用いても良い。Other forms of anode may be used in place of the carbon body.

第3図は円板状に形成した炭素陽極を示す。円板15の
周面はV字形に凹入しており、これと対向する円板16
の周面は尖ったエツジとなっている。
FIG. 3 shows a carbon anode formed into a disk shape. The circumferential surface of the disc 15 is recessed in a V-shape, and the disc 16 facing this
The circumferential surface has sharp edges.

両円板を消耗に応じて矢印の方向に徐々に回転させると
、アーク放電間隙は常に一定に維持することができる。
By gradually rotating both disks in the direction of the arrow as they wear out, the arc discharge gap can always be maintained constant.

動作において、弁3を開いて成膜室1を十分に排気し、
またヒータ8により基板5のガス出しを十分に行う。次
いで、弁2を開いて所定流量でH1ガスを導入し、また
電極4.5間に電源7を接続して電界をかけ、また電源
11により炭素棒9.10間(或いは第2図または第5
図の炭素体または炭素円板間)にアーク放電を形成する
。炭素はアーク放電の熱で気化イオン化し、電界の作用
で加速されてi板上に移行し、水素と共に基板上にダイ
ヤモンド機力−ボンを成膜する。炭素蒸気は基板に到達
する間あるいは到達してから一部の炭素はH,ガスをと
り込み一部は炭化水素となる。
In operation, the film forming chamber 1 is sufficiently evacuated by opening the valve 3,
Further, the heater 8 sufficiently vents gas from the substrate 5. Next, valve 2 is opened to introduce H1 gas at a predetermined flow rate, power source 7 is connected between electrodes 4.5 to apply an electric field, and power source 11 is used to connect carbon rods 9.10 (or as shown in FIG. 2 or 5
An arc discharge is formed between the carbon bodies or carbon discs (as shown in the figure). Carbon is vaporized and ionized by the heat of the arc discharge, accelerated by the action of the electric field, transferred onto the i-plate, and forms a diamond carbon film on the substrate together with hydrogen. While the carbon vapor reaches the substrate, or after reaching the substrate, some of the carbon takes in H and gas, and some of the carbon vapor becomes hydrocarbons.

基板5の上にはこうして微小部分でダイヤモンド構造を
有するダイヤモンド様カーボンが生成する。
Diamond-like carbon having a diamond structure is thus generated on the substrate 5 in minute portions.

アーク放電を用いると炭素は能率良く気化イオン化され
るから、従来のものの2〜3倍の成膜速度が得られる。
When arc discharge is used, carbon is efficiently vaporized and ionized, so a film formation rate two to three times faster than conventional methods can be obtained.

また真空度の調整により硬度及び光学的エネルギーギャ
ップが広範囲に#!4整できる。
Also, by adjusting the degree of vacuum, the hardness and optical energy gap can be adjusted over a wide range #! Can do 4 adjustments.

実施例 第1図の成膜装置を用い、アーク放電電力α2〜tox
w、水素圧力10′〜104Pa及びバイアス電圧60
0vの条件でダイヤモンド様カーボンの成膜実験を行っ
た。その結果を第4.5及び6図に示す。第4°図から
分るようにアーク放電電力を増大すること(すなわちカ
ーボンの蒸発速度を増大すること)により成膜速度を従
来の2〜3倍にしうろことが分る。また第5図及び第6
図から分るように成膜室圧力(水素分圧)を1×104
程度まで上げると硬度Hマ(ビッカース)及び光学エネ
ルギーギャップxiも大きく、耐摩耗性も絶縁性も良い
ダイヤモン「様カーボン膜が得られることが分る。また
炭化水素を用いないので膜厚が均一になる。
Example Using the film forming apparatus shown in Fig. 1, arc discharge power α2~tox
w, hydrogen pressure 10' to 104 Pa and bias voltage 60
A diamond-like carbon film formation experiment was conducted under 0V conditions. The results are shown in Figures 4.5 and 6. As can be seen from Figure 4, by increasing the arc discharge power (that is, increasing the carbon evaporation rate), the film forming rate can be increased two to three times the conventional rate. Also, Figures 5 and 6
As you can see from the figure, the deposition chamber pressure (hydrogen partial pressure) is 1×104
It can be seen that when the carbon film is increased to a certain level, the hardness Hma (Vickers) and the optical energy gap xi are large, and a diamond-like carbon film with good wear resistance and insulation properties is obtained.Also, since no hydrocarbon is used, the film thickness is uniform. become.

以上のように、本発明は陽極を炭素体で構成し且つアー
ク放電で炭素原子を生成させるようにしたから、能率及
び特性の良いダイヤモンド様カーボンを提供できる。
As described above, in the present invention, since the anode is made of a carbon body and carbon atoms are generated by arc discharge, diamond-like carbon with good efficiency and properties can be provided.

4、の 第1図は本発明の成膜装置の概要図、第2図は陽極の構
成を示す拡大図、第3@は他の陽極の例を示す拡大図、
第4図はアーク放電電力上成膜速度の関係を示すグラフ
、第5図は圧力と硬度の関係を示すグラフ及び第6図は
圧力と光学エネルギーギャップを示すグラフである。
4, Fig. 1 is a schematic diagram of the film forming apparatus of the present invention, Fig. 2 is an enlarged view showing the structure of the anode, and Fig. 3 is an enlarged view showing another example of the anode.
FIG. 4 is a graph showing the relationship between arc discharge power and deposition rate, FIG. 5 is a graph showing the relationship between pressure and hardness, and FIG. 6 is a graph showing pressure and optical energy gap.

1:1&膜室 11’l鵞ガス弁 3:排気弁 4:陰極 5:基板 6:陽極 7:電源 8:ヒータ 9.10:炭素体 11:電源 12.13:ホルダ 15%16:炭素円板 第1図 第2図 第4図 アー2デ(電tカ(KW) 第6図 木蝋(Pa)−1:1 & membrane chamber 11’l goose gas valve 3: Exhaust valve 4: Cathode 5: Substrate 6: Anode 7: Power supply 8: Heater 9.10: Carbon body 11: Power supply 12.13: Holder 15% 16: Carbon disk Figure 1 Figure 2 Figure 4 A2D (Electric T-Car (KW)) Figure 6 Wood wax (Pa)-

Claims (2)

【特許請求の範囲】[Claims] 1.水素ガス源と排気手段とに結合された気密成膜室に
陰極を配置して基版を支持させ前記基板に対向させて陽
極を配置し、前記陽極と陰極とを電源の正負側にそれぞ
れ接続して成る成膜装置において、前記陽極は離間した
少くとも一対の炭素体より成り、前記炭素体間にアーク
放電を生じさせる電源が接続されていることを特徴とす
る、ダイヤモンド様カーボン成膜装置。
1. A cathode is disposed in an airtight film forming chamber connected to a hydrogen gas source and an exhaust means to support a substrate, an anode is disposed facing the substrate, and the anode and cathode are connected to the positive and negative sides of a power source, respectively. A diamond-like carbon film forming apparatus comprising: a diamond-like carbon film forming apparatus, wherein the anode comprises at least a pair of spaced apart carbon bodies, and a power source is connected between the carbon bodies to generate an arc discharge. .
2.炭素体の対向端は一方が尖端、他方が凹入端となつ
ている前記第1項記載の成膜装置。
2. 2. The film forming apparatus according to item 1, wherein one of the opposing ends of the carbon body is a pointed end and the other is a recessed end.
JP60128099A 1985-06-14 1985-06-14 Diamond-like carbon film deposition system Expired - Lifetime JPH062944B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60128099A JPH062944B2 (en) 1985-06-14 1985-06-14 Diamond-like carbon film deposition system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60128099A JPH062944B2 (en) 1985-06-14 1985-06-14 Diamond-like carbon film deposition system

Publications (2)

Publication Number Publication Date
JPS61288069A true JPS61288069A (en) 1986-12-18
JPH062944B2 JPH062944B2 (en) 1994-01-12

Family

ID=14976368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60128099A Expired - Lifetime JPH062944B2 (en) 1985-06-14 1985-06-14 Diamond-like carbon film deposition system

Country Status (1)

Country Link
JP (1) JPH062944B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63176399A (en) * 1987-01-13 1988-07-20 Nippon Soken Inc Production of diamond film
JPH03122091A (en) * 1989-09-29 1991-05-24 Natl Inst For Res In Inorg Mater Method for synthesizing diamond at high speed
US5104509A (en) * 1989-12-14 1992-04-14 Fried. Krupp Gmbh Method and apparatus for producing layers of hard carbon modifications
WO2002081772A1 (en) * 2001-04-07 2002-10-17 Trikon Holdings Limited Methods and apparatus for forming precursors
CN113818004A (en) * 2021-09-22 2021-12-21 吉林大学 Diamond growth device and method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63176399A (en) * 1987-01-13 1988-07-20 Nippon Soken Inc Production of diamond film
JPH0569800B2 (en) * 1987-01-13 1993-10-01 Nippon Soken
JPH03122091A (en) * 1989-09-29 1991-05-24 Natl Inst For Res In Inorg Mater Method for synthesizing diamond at high speed
US5104509A (en) * 1989-12-14 1992-04-14 Fried. Krupp Gmbh Method and apparatus for producing layers of hard carbon modifications
WO2002081772A1 (en) * 2001-04-07 2002-10-17 Trikon Holdings Limited Methods and apparatus for forming precursors
GB2390379A (en) * 2001-04-07 2004-01-07 Trikon Holdings Ltd Methods and apparatus for forming precursors
GB2390379B (en) * 2001-04-07 2004-12-22 Trikon Holdings Ltd Methods and apparatus for forming precursors
US7279201B2 (en) 2001-04-07 2007-10-09 Aviza Europe Limited Methods and apparatus for forming precursors
CN113818004A (en) * 2021-09-22 2021-12-21 吉林大学 Diamond growth device and method

Also Published As

Publication number Publication date
JPH062944B2 (en) 1994-01-12

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