JPS61270176A - Photo-printer head - Google Patents
Photo-printer headInfo
- Publication number
- JPS61270176A JPS61270176A JP60112960A JP11296085A JPS61270176A JP S61270176 A JPS61270176 A JP S61270176A JP 60112960 A JP60112960 A JP 60112960A JP 11296085 A JP11296085 A JP 11296085A JP S61270176 A JPS61270176 A JP S61270176A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- common electrode
- copper
- emitting diode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Dot-Matrix Printers And Others (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は電子写真式プリンタなどの記録装置の光源とし
て使用される光プリンタヘッドの改良に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in an optical printer head used as a light source in a recording device such as an electrophotographic printer.
（従来の技術）
近時、情報処理技術ならびに通信技術の進展に伴い普通
紙に任意の漢字や図形を高速度、高品質で大量に出力す
ることができる小型で、かつ安価な電子写真式プリンタ
が要求されている。そのためこの要求に対処するために
プリンタの光源として絶縁基板上に複数個の発光ダイオ
ード（Ｌｆ！Ｄ）を直線状に配列取着して成る光プリン
タヘッドを使用した電子写真式プリンタが小型、高解像
度のものとして提案されている。(Prior art) With the recent advances in information processing technology and communication technology, small and inexpensive electrophotographic printers that can output large quantities of arbitrary kanji and figures on plain paper at high speed and with high quality have become popular. is required. To meet this demand, an electrophotographic printer using an optical printer head consisting of a plurality of light emitting diodes (Lf!D) arranged and mounted in a straight line on an insulating substrate as a light source for the printer has been developed. It is proposed as a resolution.
この従来の電子写真式プリンタに使用されている光プリ
ンタヘッドは通常、第３図及び第４図に示すようにセラ
ミック、ガラス等の電気絶縁材料から成る基板ｌｌ上に
アルミニウム（ＡＩ）、金（Ａｕ）等の金属から成る共
通電極１２及び個別駆動電極１３を被着形成するととも
に該共通電極１２上にガリウム−砒素−リン（ＧａＡｓ
Ｐ）等から成る発光ダイオード（ＬＥＤ） １４を多数
個、直線状に配列取着した構造を有しており、絶縁基板
１１上に搭載された駆動用ＩＣ素子１５の駆動により直
線状に配列した発光ダイオード１４の個々に印加される
電力を制御し、発光ダイオード１４を選択的に発光させ
ることによって電子写真式プリンタの光源として機能す
る。The optical printer head used in this conventional electrophotographic printer is usually mounted on a substrate made of an electrically insulating material such as ceramic or glass, such as aluminum (AI) or gold (as shown in FIGS. 3 and 4). A common electrode 12 and individual drive electrodes 13 made of metal such as Au) are deposited and formed, and gallium-arsenic-phosphorus (GaAs) is deposited on the common electrode 12.
It has a structure in which a large number of light emitting diodes (LEDs) 14 consisting of P) etc. are arranged and attached in a linear manner, and are arranged in a linear manner by driving a driving IC element 15 mounted on an insulating substrate 11. It functions as a light source for an electrophotographic printer by controlling the power applied to each of the light emitting diodes 14 and selectively causing the light emitting diodes 14 to emit light.
尚、前記複数個の発光夕冑オード１４は通常、６４個が
１単位として１つの発光ダイオードアレイ１４ａを構成
し、Ｂ４サイズの電子写真式プリンタの光源として使用
される場合には前記発光ダイオードアレイ１４ａは３２
個が直線状に配列される。Incidentally, the plurality of light emitting diode arrays 14a are normally composed of 64 light emitting diode arrays 14a as one unit, and when used as a light source of a B4 size electrophotographic printer, the light emitting diode array 14a 14a is 32
The pieces are arranged in a straight line.
（発明が解決しようとする問題点）
しかしながら、この従来の光プリンタヘッドは発光ダイ
オード１４が取着される共通電極１２が蒸着やスパッタ
リング等の薄膜手法によって絶縁基板１１上に被着形成
されており、その厚みが極めて薄く、熱伝導が悪いこと
から発光ダイオード１４に電力を印加し、発光させた際
、発光ダイオード１４が発する熱は共通電極１２に吸収
されることなく発光ダイオード１４内部に蓄積してしま
い、その結果、発光ダイオード１４が高温となって発光
波長、発光輝度にバラツキを生じ、高品質の印字、印画
ができないという欠点を有していた。(Problems to be Solved by the Invention) However, in this conventional optical printer head, the common electrode 12 to which the light emitting diode 14 is attached is formed on the insulating substrate 11 by a thin film method such as vapor deposition or sputtering. Since the light emitting diode 14 is extremely thin and has poor thermal conductivity, when power is applied to the light emitting diode 14 to cause it to emit light, the heat generated by the light emitting diode 14 is not absorbed by the common electrode 12 but is accumulated inside the light emitting diode 14. As a result, the light emitting diode 14 becomes hot, causing variations in the emission wavelength and luminance, resulting in the disadvantage that high-quality printing cannot be performed.
また、発光ダイオード１４が取着される共通電極１２の
厚みを大とすることによって発光ダイオード１４が発す
る熱を共通電極１２に良好に吸収させ、発光ダイオード
１４が印字、印画品質に低下を来すような高温となるの
を防止することも考えられるが共通電極１２を構成する
アルミニウム（ＡＩ）、金（Ａｕ）はその線膨張係数が
それぞれ２．３１ Ｘ １０− ’ ／ ｄｅｇ、１．
４４ ｘ １０−’／ｄｅｇであり、共通電極１２が被
着される絶縁基板１１の線膨張係数（例えばアルミナの
場合：６．５〜？、２ Ｘ １０−’／ｄｅｇ）と大き
く相違することから両者間に発光ダイオード１４の発す
る熱が印加されると、前記線膨張係数の相違に起因して
共通電極１２が絶縁基板１１より剥離してしまい、その
結果、光プリンタヘッドとしての機能が完全に喪失して
しまうという重大な欠点を誘発する。In addition, by increasing the thickness of the common electrode 12 to which the light emitting diode 14 is attached, the heat generated by the light emitting diode 14 is better absorbed by the common electrode 12, and the light emitting diode 14 causes deterioration in printing quality. Aluminum (AI) and gold (Au) constituting the common electrode 12 have linear expansion coefficients of 2.31 x 10-'/deg and 1.31 x 10-'/deg, respectively.
44 x 10-'/deg, which is significantly different from the linear expansion coefficient of the insulating substrate 11 to which the common electrode 12 is attached (for example, in the case of alumina: 6.5~?, 2 x 10-'/deg) When the heat generated by the light emitting diode 14 is applied between the two, the common electrode 12 separates from the insulating substrate 11 due to the difference in linear expansion coefficient, and as a result, the function as an optical printer head is completely lost. This causes a serious disadvantage of losing the property.
（発明の目的）
本発明は上述の諸欠点に鑑み案出されたもので、その目
的は発光ダイオードが発する熱を良好に吸収することに
よって発光ダイオードに発生する発光波長や発光輝度の
バラツキを解消し、高品質の印字、印画を得ることがで
きる光プリンタヘッドを提供することにある。(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to eliminate variations in the light emission wavelength and light emission brightness that occur in light emitting diodes by effectively absorbing the heat generated by light emitting diodes. The purpose of the present invention is to provide an optical printer head that can produce high-quality prints and prints.
（問題点を解決するための手段）
本発明は絶縁基板上に被着された共通電極上に複数個の
発光ダイオードを直線状に配列取着した光プリンタヘッ
ドにおいて、前記共通電極を線膨張係数が６．０乃至９
．ＯＸ １０−”／ ｄｅｇの銅−タングステン合金も
しくは銅−モリブデン合金から成る金属体で形成したこ
とを特徴とするものである。(Means for Solving the Problems) The present invention provides an optical printer head in which a plurality of light emitting diodes are linearly arranged and attached on a common electrode deposited on an insulating substrate. is 6.0 to 9
．． It is characterized in that it is formed of a metal body made of a copper-tungsten alloy or a copper-molybdenum alloy of OX 10-''/deg.
（実施例） 次に、本発明を添付図面に基づき詳細に説明する。(Example) Next, the present invention will be explained in detail based on the accompanying drawings.
第１図及び第２図は本発明の光プリンタヘッドの一実施
例を示し、ｌはセラミック、ガラス等の電気絶縁材料か
ら成る基板であり、その表面に共通電極２が被着形成さ
れている。1 and 2 show an embodiment of the optical printer head of the present invention, l is a substrate made of an electrically insulating material such as ceramic or glass, and a common electrode 2 is formed on the surface of the substrate. .
前記共通電極２はその上部に発光ダイオード３が接合さ
れ９発光ダイオード３に電力を印加し発光させるための
一方の電極として作用する。The common electrode 2 has a light emitting diode 3 connected thereto and acts as one electrode for applying power to the light emitting diode 3 to cause it to emit light.
前記共通電極２上に接合される発光ダイオード３はＧａ
ＡｓＰ系、ＧａＰ系等の発光ダイオードが使用され、例
えばＧａＡｓＰ系の発光ダイオードの場合には、まずＧ
ａＡｓの基板を炉中にて高温に加熱するとともにＡｓＨ
ｓ（アルシン）とＰＨｔ（ホスヒン）とＧａ（ガリウム
）を適量に含むガスを接触させて基板表面にｎ型半導体
のＧａＡｓＰ（ガリウム−砒素−リン）の単結晶を成長
させ、次にＧａＡｓＰ単結晶表面に５ｉ２Ｎ４（窒化シ
リ゛コン）の窓付膜を被着させるとともに該窓部にＺｎ
（亜鉛）のガスをさらし、ｎ型半導体のＧａＡｓＰ単結
晶層の一部にＺｎを拡散させてｐ型半導体を形成し、ｐ
ｎ接合をもたすことによって形成される。The light emitting diode 3 bonded on the common electrode 2 is made of Ga.
AsP-based, GaP-based, etc. light-emitting diodes are used. For example, in the case of a GaAsP-based light-emitting diode, first the G
The aAs substrate is heated to a high temperature in a furnace and AsH
A single crystal of GaAsP (gallium-arsenic-phosphorus), an n-type semiconductor, is grown on the substrate surface by contacting a gas containing appropriate amounts of s (arsine), PHt (phosphine), and Ga (gallium), and then a GaAsP single crystal is grown. A window film of 5i2N4 (silicon nitride) is deposited on the surface and Zn is applied to the window.
(zinc) gas to diffuse Zn into a part of the n-type semiconductor GaAsP single crystal layer to form a p-type semiconductor.
It is formed by providing an n-junction.
また前記発光ダイオード（ＬＥＤ） ３は絶縁基板１
上の共通電極２に直線状に配列されて取着接合されてお
り、Ｂ４サイズの電子写真式プリンタに使用される光プ
リンタヘッドの場合には２０４８個（１ｍｍ当たり８個
）の発光ダイオード４が直線状に配列される。Further, the light emitting diode (LED) 3 is an insulating substrate 1
In the case of an optical printer head used in a B4 size electrophotographic printer, 2048 light emitting diodes 4 (8 per 1 mm) are linearly arranged and attached to the upper common electrode 2. Arranged in a straight line.
尚、この場合、発光ダイオード３はその６４個が１単位
として１つの発光ダイオードアレイ３ａを構成し、該発
光ダイオードアレイ３ａを３２個、直線状に配列するこ
とによって２０４８個の発光ダイオード３が共通電極２
上に直線状に配列取着される。In this case, 64 light emitting diodes 3 constitute one light emitting diode array 3a, and by arranging 32 light emitting diode arrays 3a in a straight line, 2048 light emitting diodes 3 are common. Electrode 2
are attached in a linear array on the top.
前記絶縁基板ｌ上の共通電極２に直線状に配列接合され
た発光ダイオード３の両側には該発光ダイオード３の配
列に対し平行となるように駆動用ＩＣ素子４が搭載され
ており、駆動用ＩＣ素子４の各出力電極４ａは該ＩＣ素
子４の一側辺で、かつ発光ダイオード３の配列と平行と
なるように形成されている。これにより各発光ダイオー
ド３と駆動用ＩＣ素子４の各出力電極４ａとの距離は実
質的にすべて同一となすことができる。Driving IC elements 4 are mounted on both sides of the light emitting diodes 3 which are linearly arranged and bonded to the common electrode 2 on the insulating substrate l so as to be parallel to the arrangement of the light emitting diodes 3. Each output electrode 4a of the IC element 4 is formed on one side of the IC element 4 and parallel to the arrangement of the light emitting diodes 3. Thereby, the distances between each light emitting diode 3 and each output electrode 4a of the driving IC element 4 can be made substantially the same.
尚、前記駆動用ＩＣ素子４は発光ダイオード３の両側に
分けて搭載したが、上下いずれか片側にのみ搭載しても
よい。Although the driving IC element 4 is mounted separately on both sides of the light emitting diode 3, it may be mounted only on either the upper or lower side.
前記駆動用ＩＣ素子４は従来周知の半導体技術により作
製され、発光ダイオード３に印加される電力を制御して
、発光ダイオード３を選択的に発光させる作用を為す。The driving IC element 4 is manufactured using a conventionally well-known semiconductor technology, and has the function of controlling the power applied to the light emitting diode 3 to cause the light emitting diode 3 to selectively emit light.
また前記駆動用ＩＣ素子４の各出力電極４ａは各発光ダ
イオード３にアルミニウム（ＡＩ）、金（Ａｕ）等の細
線（ボンディングワイヤ） ５を介しワイヤボンディン
グされており、これによって各発光ダイオード３と駆動
用ＩＣ素子４とはボンディングワイヤ５を介し電気的に
接続されることとなる。Further, each output electrode 4a of the driving IC element 4 is wire-bonded to each light-emitting diode 3 via a thin wire (bonding wire) 5 made of aluminum (AI), gold (Au), etc. It will be electrically connected to the driving IC element 4 via a bonding wire 5.
尚、この場合、各発光ダイオード３と駆動用ＩＣ素子４
の各出力電極４ａとの距離がすべて実質的に同一である
ことから各発光ダイオード３と駆動用ＩＣ素子４の各出
力電極４ａとを電気的に接続するボンディングワイヤ５
の長さも実質的に同一となり、その電気抵抗値を均等と
なすことができる。In this case, each light emitting diode 3 and the driving IC element 4
The bonding wires 5 electrically connect each light emitting diode 3 and each output electrode 4a of the driving IC element 4 because the distances to each output electrode 4a of the driving IC element 4 are all substantially the same.
The lengths of the two are also substantially the same, and the electrical resistance values thereof can be made equal.
かくして、駆動用ＩＣ素子４の駆動により、共通電極２
及び駆動用ＩＣ素子４の出力電極４ａを介し発光ダイオ
ード３の個々に印加される電力を制御し、発光ダイオー
ド３を均一波長、均一輝度で選択的に発光させることに
よって電子写真式プリンタの光源として機能する。Thus, by driving the driving IC element 4, the common electrode 2
The power applied to each light emitting diode 3 is controlled through the output electrode 4a of the driving IC element 4, and the light emitting diode 3 is selectively emitted with uniform wavelength and uniform brightness, so that it can be used as a light source for an electrophotographic printer. Function.
本発明の光プリンタヘッドにおいては９発光ダイオード
３が取着接合され−る共通電極２を線膨張係数が６．０
乃至９．ＯＸｌ０−’／ｄｅｇの銅−タングステン合金
もしくは銅−モリブデン合金から成る金属体で形成する
ことが重要である。このように共通電極２を線膨張係数
が６．０乃至９．ＯＸｌ０−’／ｄｅｇの銅−タングス
テン合金もしくは銅−モリブデン合金から成る金属体で
形成すると共通電極２の線膨張係数を絶縁基板１を構成
するセラミックやガラス等の線膨張係数（例えばアルミ
ナの場合：６．５〜？、２ Ｘｌ０−’／ ｄｅｇ ）
に同一もしくは近似させることができ発光ダイオード３
が発する熱が印加されたとしても両者間に線膨張係数の
相違に伴う応力が発生することは一切なく、共通電極２
が絶縁基板１より剥離することは皆無となる。In the optical printer head of the present invention, the common electrode 2 to which nine light emitting diodes 3 are attached and connected has a linear expansion coefficient of 6.0.
to 9. It is important that the metal body is made of a copper-tungsten alloy or a copper-molybdenum alloy of OXl0-'/deg. In this way, the common electrode 2 has a linear expansion coefficient of 6.0 to 9. When formed of a metal body made of a copper-tungsten alloy or a copper-molybdenum alloy of OXl0-'/deg, the linear expansion coefficient of the common electrode 2 will be the same as that of the ceramic, glass, etc. that constitutes the insulating substrate 1 (for example, in the case of alumina: 6.5~?, 2 Xl0-'/deg)
Light emitting diode 3 can be made to be the same or similar to
Even if the heat generated by the common electrode 2 is applied, no stress due to the difference in linear expansion coefficient is generated between the two, and the common electrode 2
There is no possibility that the film will peel off from the insulating substrate 1.
また前記銅−タングステン合金もしくは銅−モリブデン
合金は金属体として所定の厚み（０，５〜１．０ａ＋ｓ
）を存していること及び熱伝導率が０．４１−０゜７６
ｃａｌ／ｓｃｍ ’Ｃであること等から熱伝導が極めて
良く、共通電極２上に接合された発光ダイオード３が熱
を発したとしても核熱は共通電極２に良好に吸収される
こととなり発光ダイオード３が高温となって発光波長、
発光輝度にバラツキを生じることも有効に防止できる。Further, the copper-tungsten alloy or copper-molybdenum alloy has a predetermined thickness (0.5 to 1.0a+s) as a metal body.
) and a thermal conductivity of 0.41-0°76
cal/scm 'C, so heat conduction is extremely good, and even if the light emitting diode 3 bonded on the common electrode 2 generates heat, the nuclear heat is well absorbed by the common electrode 2, and the light emitting diode 3 becomes high temperature and the emission wavelength,
It is also possible to effectively prevent variations in luminance.
前記銅−タングステン合金又は銅−モリブデン合金はタ
ングステン又はモリブデンの粉末（粒径１０μ■）を１
０００Ｋｇ７ｃｍ”の圧力で加圧成形し、これを還元雰
囲気中、約１５００℃の温度で焼成することによって得
た多孔質のタングステン焼結体又はモリブデン焼結体に
、約１１００℃の温度で加熱溶融された銅を前記タング
ステン焼結体又はモリブデン焼結体の多孔部分に毛管現
象を利用して含浸させることによって作製され、タング
ステンに対し銅を１０ｗｔχ、１５ｗｔχ、２０ｗｔχ
、２５ｗす及び３０−ｔχ含浸させるとその合金の線膨
張係数はそれぞれ６．０×１０−’／ｄｅｇ 、６．５
Ｘｌ０−’／ｄｅｇ 、 ？、ＯＸｌ０−’／ｄｅｇ
、 ？、８ Ｘｌ０−”／ｄｅｇ及び９．Ｏｘ １０
−’／ｄｅｇとなり、又モリブデンに対し銅を１０ｗｔ
χ、１５ｗｔχ、２０ｗｔχ及び２５ｗ ｔχ含浸させ
るとその合金の線膨張係数はそれぞれ６．ＯｘｌＯ−’
／ｄｅｇ 、 ６．６ Ｘｌ０−”／ｄｅｇ 、 ？、
２ Ｘｌ０−’／ｄｅｇ及び７．８ Ｘｌ０−”／ｄｅ
ｇとなる。したがって、タングステン焼結体又はモリブ
デン焼結体に銅を含浸させる際、その量を制御すること
によって得られる合金の線膨張係数を絶縁基板１を構成
するセラミックやガラス等の線膨張係数に同一もしくは
近似させることが可能となる。For the copper-tungsten alloy or copper-molybdenum alloy, 1 tungsten or molybdenum powder (particle size 10μ■) is used.
A porous tungsten sintered body or a molybdenum sintered body obtained by pressure molding at a pressure of 000 Kg 7 cm" and firing at a temperature of about 1500°C in a reducing atmosphere is heated and melted at a temperature of about 1100°C. The porous portion of the tungsten sintered body or molybdenum sintered body is impregnated with copper using capillary phenomenon, and copper is added to tungsten at 10wtχ, 15wtχ, 20wtχ
When impregnated with
Xl0-'/deg, ? , OXl0-'/deg
, ? , 8 Xl0-”/deg and 9.Ox 10
-'/deg, and copper is 10wt for molybdenum.
When impregnated with χ, 15wtχ, 20wtχ and 25wtχ, the coefficient of linear expansion of the alloy is 6. OxlO-'
/deg, 6.6 Xl0-”/deg, ?,
2 Xl0-'/deg and 7.8 Xl0-''/deg
g. Therefore, when a tungsten sintered body or a molybdenum sintered body is impregnated with copper, by controlling the amount of copper, the linear expansion coefficient of the obtained alloy can be made to be the same as or equal to the linear expansion coefficient of the ceramic, glass, etc. constituting the insulating substrate 1. It becomes possible to approximate.
前記銅−タングステン合金又は銅−モリブデン合金は共
通電極２として絶縁基板ｌ上にガラス、樹脂、ロウ材等
の接着材を介し取着される。The copper-tungsten alloy or copper-molybdenum alloy is attached as a common electrode 2 onto an insulating substrate 1 via an adhesive such as glass, resin, or brazing material.
（発明の効果）
かくして本発明の光プリンタヘッドによれば絶縁基板上
の発光ダイオードが取着接合される共通電極を線膨張係
数が６．０乃至９．ＯＸ １０−’／ｄｅｇの銅−タン
グステン合金もしくは銅−モリブデン合金から成る金属
体で形成したことから共通電極２の線膨張係数を絶縁基
板ｌのものと同一もしくは近似させることができ、共通
電極及び絶縁基板に発光ダイオードの発する熱が印加さ
れたとしても両者間に線膨張係数の相違に起因する応力
が発生することは一切なく共通電極は絶縁基板表面に常
に強固に接合する。また発光ダイオードの発する熱は共
通電極が良好に吸収することから発光ダイオードは高温
になることが皆無であり、各発光ダイオードが発する光
の発光波長、発光輝度を常に均一として極めて高品質の
印字、印画を出力させることが可能となる。(Effects of the Invention) Thus, according to the optical printer head of the present invention, the common electrode to which the light emitting diodes on the insulating substrate are attached and connected has a linear expansion coefficient of 6.0 to 9. Since the common electrode 2 is formed of a metal body made of a copper-tungsten alloy or a copper-molybdenum alloy of OX 10-'/deg, the linear expansion coefficient of the common electrode 2 can be made the same or similar to that of the insulating substrate 1, and the common electrode and Even if the heat generated by the light emitting diode is applied to the insulating substrate, no stress due to the difference in linear expansion coefficient is generated between the two, and the common electrode is always firmly bonded to the surface of the insulating substrate. In addition, the heat emitted by the light emitting diodes is well absorbed by the common electrode, so the light emitting diodes never reach high temperatures, and the wavelength and luminance of the light emitted by each light emitting diode are always uniform, resulting in extremely high quality printing. It becomes possible to output a print.
第１図は本発明の光プリンタヘッドの要部拡大平面図、
第２図は第１図の縦断面図、第３図は従来の光プリンタ
ヘッドの要部拡大平面図、第４図は第３図の縦断面図で
ある。
１．１１・・・絶縁基板 ２，１２・・・共通電極３
．１４・・・発光ダイオード
４．１５・・・駆動用ＩＣ素子FIG. 1 is an enlarged plan view of the main parts of the optical printer head of the present invention;
2 is a longitudinal cross-sectional view of FIG. 1, FIG. 3 is an enlarged plan view of a main part of a conventional optical printer head, and FIG. 4 is a longitudinal cross-sectional view of FIG. 3. 1.11...Insulating substrate 2,12...Common electrode 3
．． 14... Light emitting diode 4.15... Drive IC element
Claims (1)
オードを直線状に配列取着した光プリンタヘッドにおい
て、前記共通電極を線膨張係数が６．０乃至９．０×１
０＾−＾６／ｄｅｇの銅−タングステン合金もしくは銅
−モリブデン合金から成る金属体で形成したことを特徴
とする光プリンタヘッド。In an optical printer head in which a plurality of light emitting diodes are linearly arranged and attached on a common electrode deposited on an insulating substrate, the common electrode has a linear expansion coefficient of 6.0 to 9.0×1.
An optical printer head characterized in that it is formed of a metal body made of a copper-tungsten alloy or a copper-molybdenum alloy of 0^-^6/deg.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60112960A JPS61270176A (en) | 1985-05-24 | 1985-05-24 | Photo-printer head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60112960A JPS61270176A (en) | 1985-05-24 | 1985-05-24 | Photo-printer head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61270176A true JPS61270176A (en) | 1986-11-29 |
Family
ID=14599843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60112960A Pending JPS61270176A (en) | 1985-05-24 | 1985-05-24 | Photo-printer head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61270176A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5285217A (en) * | 1991-04-04 | 1994-02-08 | Agfa-Gevaert N. V. | Led exposure head |
| JP2008507150A (en) * | 2004-07-19 | 2008-03-06 | ラミナ ライティング インコーポレーテッド | LED array package with internal feedback and control |
| EP1661718A3 (en) * | 2004-11-29 | 2008-10-29 | Seiko Epson Corporation | Optical writing device and method of manufacturing the same |
| US7486307B2 (en) | 2002-12-24 | 2009-02-03 | Oki Data Corporation | Semiconductor apparatus having conductive layers and semiconductor thin films |
-
1985
- 1985-05-24 JP JP60112960A patent/JPS61270176A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5285217A (en) * | 1991-04-04 | 1994-02-08 | Agfa-Gevaert N. V. | Led exposure head |
| US7486307B2 (en) | 2002-12-24 | 2009-02-03 | Oki Data Corporation | Semiconductor apparatus having conductive layers and semiconductor thin films |
| JP2008507150A (en) * | 2004-07-19 | 2008-03-06 | ラミナ ライティング インコーポレーテッド | LED array package with internal feedback and control |
| EP1661718A3 (en) * | 2004-11-29 | 2008-10-29 | Seiko Epson Corporation | Optical writing device and method of manufacturing the same |
| US7486306B2 (en) | 2004-11-29 | 2009-02-03 | Seiko Epson Corporation | Optical writing device and method of manufacturing the same |
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