JPS61259552A - Semiconductor sealing device - Google Patents

Semiconductor sealing device

Info

Publication number
JPS61259552A
JPS61259552A JP60102302A JP10230285A JPS61259552A JP S61259552 A JPS61259552 A JP S61259552A JP 60102302 A JP60102302 A JP 60102302A JP 10230285 A JP10230285 A JP 10230285A JP S61259552 A JPS61259552 A JP S61259552A
Authority
JP
Japan
Prior art keywords
epoxy resin
powder
crystalline
composition
hardener
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60102302A
Other languages
Japanese (ja)
Inventor
Hiroshi Nakatsuka
中司　洋
Shiro Mazaki
真崎　史郎
Norio Kawamoto
河本　紀雄
Kiyoshi Saito
潔 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Electric Industrial Co Ltd filed Critical Nitto Electric Industrial Co Ltd
Priority to JP60102302A priority Critical patent/JPS61259552A/en
Publication of JPS61259552A publication Critical patent/JPS61259552A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve the workability and to stabilize the quality by using a sealing composition mixed with an inorganic filler and a hardener in a crystalline epoxy resin. CONSTITUTION:A semiconductor sealing device is coated of a composition formed of crystalline epoxy resin, inorganic filler and hardener. The epoxy resin preferably has a melting viscosity of 5 poise or lower at the temperature higher by 10 deg.C than its melting point, and includes, for example, 4,4'-bis(2,3- epoxypropoxy)-3, 3',5, 5-tetramethylbiphenyl, diglycidylterephthalate, diglycidylhy droxinone with 50-150 deg.C of melting point. The hardener includes a solid harden er such as diaminodiphenylmethane, dicyandiamide. The filler includes, for example, quartz glass powder, crystalline silica, alumina powder, most preferably at the points of high purity and low thermal expansion coefficient. The using amount preferably contains 150-300wt.pts. with respect to 100wt.pts. of the epoxy resin.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 不発萌は、溶融流動性が良く且つ硬化速度の速い作業性
の良い組成物を用いて被覆させて得られる半導体封止装
置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] Fumoe relates to a semiconductor encapsulation device obtained by coating with a composition having good melt flowability, fast curing speed, and good workability.

〔従来の技術〕[Conventional technology]

従来半導体素子を封止する手段の一つにエポキシ樹脂粉
末を所定の大きさに成形したペレット組成物を半導体素
子上に載置し、その後加熱溶融して被覆する方法がある
。この無機溶融封止を行うためには、エポキシ樹脂粉末
が溶融後充分に流動する必要があり、このためエポキシ
樹脂の反応速度を遅くする必要がある。このために従来
次の様な対策が採られている。One of the conventional methods for sealing a semiconductor element is to place a pellet composition prepared by molding epoxy resin powder into a predetermined size onto the semiconductor element, and then heat and melt the composition to cover the semiconductor element. In order to perform this inorganic melt sealing, it is necessary for the epoxy resin powder to flow sufficiently after melting, and therefore it is necessary to slow down the reaction rate of the epoxy resin. Conventionally, the following measures have been taken for this purpose.

■反応速度の遅い硬化剤を選択使用する。■Select and use a curing agent with a slow reaction rate.

＠反応速度が特に遅くない硬化剤を使用する場合は、硬
化剤の量を少量使用するか、または乾式混合する。@When using a curing agent that does not have a particularly slow reaction rate, use a small amount of the curing agent or dry mix it.

しかしながら■については硬化に長時間を要し作業性が
悪いという欠点があり、また■については硬化剤の量が
少ないためエポキシ樹脂硬化物の特性が低下し、また乾
式混合の場合には分散性が悪く品質面での安定性に欠け
る難点がある。However, the disadvantage of ■ is that it takes a long time to cure and the workability is poor, and in the case of ■, the properties of the cured epoxy resin deteriorate because the amount of curing agent is small, and the dispersibility is poor in the case of dry mixing. It has the disadvantage of poor quality and lack of stability in terms of quality.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

本発明が解決しようとする問題点は上記従来方法で生ず
る難点を解決し、作業性の良い組成物を用いて、品質面
での安定性の優れた半導体封止装置を提供せんとするこ
とである。The problem to be solved by the present invention is to solve the problems caused by the above-mentioned conventional methods, and to provide a semiconductor encapsulation device with excellent quality stability by using a composition with good workability. be.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点はエポキシ樹脂として従来この種半導体封止
用組成物に全く使用されたことが無い結晶性エポキシ樹
脂という特定のエポキシ樹脂を使用し、且つこれに無機
質充填剤と硬化剤とを配合した組成物を半導体素子封止
用組成物として使用することによって達成される。The above problem was solved by using a specific epoxy resin called crystalline epoxy resin, which has never been previously used in this type of semiconductor encapsulation composition, and by blending an inorganic filler and a curing agent with it. This is achieved by using the composition as a composition for encapsulating semiconductor devices.

尚、ここで言う結晶性エポキシ樹脂とは、Ｘ線回折によ
り多数の結晶のピークが表われる固形エポキシ樹脂であ
って、物理的にはシャープな融点を示し且つ溶融時には
分子間相互作用が殆んどなくなるため極端に粘度が低下
する性質を有する。The crystalline epoxy resin referred to here is a solid epoxy resin that shows many crystal peaks in X-ray diffraction, and physically shows a sharp melting point and has almost no intermolecular interaction when melted. It has the property of extremely decreasing viscosity as it disappears.

〔作用〕[Effect]

本発明に於いて使用する結晶性エポキシ樹脂は融点が５
０〜１５０°Ｃである固体の結晶性エポキシ樹脂であり
、従来この種分野で使用されて来た所謂結晶性エポキシ
樹脂が広く使用出来る。特に本発明に於いてはその融点
よりも１０℃高い温度での熔融粘度が５ポイズ以下であ
るエポキシ樹脂が好ましい。これ等の具体例としては、
たとえば４．４’、−ビス（２，３−エポキシプロポキ
シ）−３，３’、　　５．　５’−テトラメチルビフェ
ニル、ジグリシジルテレフタレート、ジグリシジルハイ
ドロキノン等を例示出来る。更に詳しくは、たとえば下
記一般式（１）で表わされるジグリシジルハイドロキノ
ンを代表例として説明すると、次の通りである。The crystalline epoxy resin used in the present invention has a melting point of 5.
It is a solid crystalline epoxy resin having a temperature of 0 to 150°C, and so-called crystalline epoxy resins that have been conventionally used in this type of field can be widely used. Particularly in the present invention, an epoxy resin having a melt viscosity of 5 poise or less at a temperature 10° C. higher than its melting point is preferred. Specific examples of these include:
For example, 4.4', -bis(2,3-epoxypropoxy)-3,3', 5. Examples include 5'-tetramethylbiphenyl, diglycidyl terephthalate, and diglycidyl hydroquinone. More specifically, diglycidyl hydroquinone represented by the following general formula (1) will be explained as a representative example as follows.

、、、、、、（１） ジグリシジルハイドロキノンは式（Ｉ）において繰り返
し単位数ｎ＝ｏの化合物であり、結晶性を有するもので
ある。しかしながら本発明に於いては上記ｎが１〜５程
度の化合物や、末端がエポキシ化されていない化合物を
２０％以下好ましくは５％以下含んでいても良い。(1) Diglycidylhydroquinone is a compound of formula (I) in which the number of repeating units is n=o, and has crystallinity. However, in the present invention, the composition may contain 20% or less, preferably 5% or less of a compound where n is about 1 to 5 or a compound whose terminal is not epoxidized.

特に好ましい結晶性エポキシ樹脂は、下記構造式（ＩＩ
） （Ｒ″は旧　ＣＨ３またはハロゲン原子を示す）で示さ
れるものである。このエポキシ樹脂に於（、ｓてＲがＣ
Ｈ３の場合は融点は１０５〜１０７℃で、これを溶融し
た場合たとえば１５０℃で０．０２ポイズ程度以上とな
る非常に低い粘度を示す。A particularly preferable crystalline epoxy resin has the following structural formula (II
) (R" represents former CH3 or halogen atom). In this epoxy resin, (,s, R represents C
In the case of H3, the melting point is 105 to 107°C, and when it is melted, it exhibits a very low viscosity of about 0.02 poise or more at 150°C.

本発明に於いては該結晶性エポキシ樹脂としては上記で
説明した通りその融点５０〜１５０°Ｃのものを使用す
るが、この際５０℃に達しないものでは目的物粉体組成
物がブロッキングを生じ易く、また逆に１５０℃よりも
高くなると作業性が悪くなる傾向がある。好ましい融点
は８０〜１２０℃程度である。In the present invention, as the crystalline epoxy resin, one with a melting point of 50 to 150°C is used as explained above, but in this case, if the melting point does not reach 50°C, the target powder composition will not block. This tends to occur, and conversely, when the temperature is higher than 150°C, workability tends to deteriorate. A preferable melting point is about 80 to 120°C.

本発明に於いては上記結晶性エポキシ樹脂以外のエポキ
シ樹脂を、該結晶性エポキシ樹脂に対し５０重量％以下
の量で使用することが出来、この際のその他の樹脂とし
てたとえばビスフェノールＡ型エポキシ樹脂、ノボラッ
ク型エポキシ樹脂、通富のグリシジル型エポキシ樹脂等
を代表例として挙げることが出来る。In the present invention, an epoxy resin other than the above-mentioned crystalline epoxy resin can be used in an amount of 50% by weight or less based on the crystalline epoxy resin, and in this case, other resins such as bisphenol A epoxy resin , novolak type epoxy resin, Tsutomi's glycidyl type epoxy resin, etc. can be cited as representative examples.

本発明に於いて用いられる硬化剤としては固形硬化剤で
あれば特に限定されず、たとえばジアミノジフェニルメ
タン、ジシアンジアミド、テトラヒドロフタリックアン
ハイドライド、ノボラック型フェノール系樹脂等である
。これ等の硬化剤は１種若しくは２種以上の混合系で使
用することも可能である。The curing agent used in the present invention is not particularly limited as long as it is a solid curing agent, and examples thereof include diaminodiphenylmethane, dicyandiamide, tetrahydrophthalic anhydride, novolac type phenolic resin, and the like. These curing agents can be used alone or in a mixture of two or more.

エポキシ樹脂と硬化剤の配舎比については、硬化剤の官
能基の数とエポキシ樹脂のエポキシ基の数の比が０．５
〜１．５の範囲内にあるようにすることが好ましい。こ
の際上記範囲をはずれると反応が充分におこり難くなり
、硬化物の特性が劣化しやすくなる傾向がある。Regarding the distribution ratio of epoxy resin and curing agent, the ratio of the number of functional groups in the curing agent to the number of epoxy groups in the epoxy resin is 0.5.
It is preferable to set it within the range of 1.5 to 1.5. At this time, if the amount is outside the above range, the reaction will be difficult to occur sufficiently, and the properties of the cured product will tend to deteriorate.

本発明に於いて用いられる硬化剤と併用して硬　　・化
促進剤を使用することが出来る。具体例としては、たと
えば２−メチルイミダゾール、４−エチル−２−メチル
イミダゾール等のイミダゾール類、ベンジルジメチルア
ミン、トリエチルアミン等の三級アミン類、三弗化ホウ
素アミンコンプレックス、オクチル酸スズ、ナフテン酸
コバルト等の塩類等が例示出来る。A curing accelerator can be used in combination with the curing agent used in the present invention. Specific examples include imidazoles such as 2-methylimidazole and 4-ethyl-2-methylimidazole, tertiary amines such as benzyldimethylamine and triethylamine, boron trifluoride amine complex, tin octylate, and cobalt naphthenate. Examples include salts such as

本発明に於いて用いられる無機質充填剤としては、石英
ガラス粉末、結晶性シリカ粉末、ガラス繊維、タルク、
アルミナ粉末、ケイ酸カルシウム粉末、炭酸カルシウム
粉末、硫酸バリウム粉末、酸化チタン粉末等であるが、
これ等の中で石英ガラス粉末や、結晶性シリカ、アルミ
ナ粉末が高純度と低熱膨張係数の点で最も好ましい。こ
れ等無機質充填剤の粒度は通常０．０５〜１００μｍ好
ましくは０．１〜３０μｍ程度であり、またその使用量
は結晶性エポキシ樹脂１００重量部に対し１５０〜３０
０重量部好ましくは１５０〜２５０重量部である。Inorganic fillers used in the present invention include quartz glass powder, crystalline silica powder, glass fiber, talc,
Alumina powder, calcium silicate powder, calcium carbonate powder, barium sulfate powder, titanium oxide powder, etc.
Among these, quartz glass powder, crystalline silica, and alumina powder are most preferred in terms of high purity and low coefficient of thermal expansion. The particle size of these inorganic fillers is usually about 0.05 to 100 μm, preferably about 0.1 to 30 μm, and the amount used is 150 to 30 μm per 100 parts by weight of the crystalline epoxy resin.
0 parts by weight, preferably 150 to 250 parts by weight.

本発明に係るエポキシ樹脂組成物は必要に応じて、たと
えば天然ワックス類、合成ワックス類、直鎖脂肪酸の金
属塩、酸アミド類、エステル類若しくはパラフィン類等
の離型剤、カーボンブラック等の着色剤、シランカップ
リング際等を適宜添加配合しても差し支えない。The epoxy resin composition according to the present invention may contain, if necessary, a mold release agent such as natural waxes, synthetic waxes, metal salts of straight chain fatty acids, acid amides, esters or paraffins, and coloring such as carbon black. There is no problem in adding and blending agents, silane coupling agent, etc. as appropriate.

本発明に係る組成物は、所定の組成比に選んだ原料組成
分をたとえばミキサーによって充分混合後、更に熱ロー
ルによる熔融混合処理、又はニーダ−等による混合処理
を加えた後粉砕し、粉末の状態か若しくほこの粉末をプ
レス等により任意の大きさでペレット状に成形すること
によって提供される。The composition according to the present invention is prepared by thoroughly mixing the raw material components selected in a predetermined composition ratio, for example, with a mixer, and then melt-mixing them with hot rolls, or mixing them with a kneader, etc., and then pulverizing them into a powder. It is provided by molding the powder into pellets of any desired size using a press or the like.

本発明に係る組成物は、半導体のみならず、コンデンサ
ー、抵抗器等の封止用にも使用出来る他、タブレットに
成形して成形用としたり、その他接着剤としても使用す
ることが出来る。　　　′　　□以上本発明については
その代表例として単導体４封止用ペレット組成物を用い
た場合について説明したが、本発明に於いては□ペレッ
ト組成物を使用　□する場合だけでなく、粉末状の成形
用組成物として封止しても良く、またその信奉発明組成
物を用いて従来知られている各種の封止手段により半導
体を封止しても良い。The composition according to the present invention can be used not only for sealing semiconductors, but also for capacitors, resistors, etc., and can also be used for molding by forming into tablets, or as an adhesive. ' □The present invention has been described above using a pellet composition for encapsulating four single conductors as a typical example thereof, but the present invention is applicable not only to the use of □pellet compositions, but also to the use of powdered Alternatively, the composition of the invention may be used to seal a semiconductor by various conventionally known sealing means.

〔実施例〕〔Example〕

以下に実施例を示して本発明を具体的に説明するが、部
とあるは重量部を示すものとする。The present invention will be specifically described below with reference to Examples, where parts are by weight.

実施例１ ゛　第１表に示す配合割合（いずれも部）で、結晶、１ 性エポキシ樹脂である４、４′−ビス（２ｊ、　　３４
−エポキシプロポキシ＞　−３，３’、　　５．　５’
−テトラメチルビフェニル（エポキシ樹脂Ａ：エポキシ
当量１８５）１００部、溶融シリカ粉末１８０部、シラ
ンカップリング剤Ａ−１８６（ユニオンカーバイド製）
２．５部、カッボンブラック１部とをヘンシルミキサー
で予備部゛合の後、熱ロールにより９５℃〜１００℃で
充分溶融混合した後、フェノールノボラック樹脂（軟化
点９８℃、フェノール性水酸基当量１０６）５７部、２
−ウンデシルイミダゾール０．５部を加え、４分熔融混
合した後、冷却後常法に従い粉砕分級し、４０メツシユ
パスΦ粉蜂を得た。この粉体の１５０℃におけるゲル□
化時間及び硬化時間を、それぞれ１５０℃熱板上、ＤＳ
Ｃで測定した。更にこの粉体を完全硬化した１　　　　
　　　　・ 後、ＴＭＡ　（Ｔｈｅｒｍａｌ　Ｍｅｃｈａｎｉｃａｌ
　Ａｎａｌｙｓｅｒ）によリガラス転位温度を測定した
。それ獣れの結果を第２表に示した。Example 1 ゛ At the compounding ratios (all parts) shown in Table 1, 4,4'-bis(2j, 34
-Epoxypropoxy>-3,3', 5. 5'
-100 parts of tetramethylbiphenyl (epoxy resin A: epoxy equivalent 185), 180 parts of fused silica powder, silane coupling agent A-186 (manufactured by Union Carbide)
After preliminarily combining 2.5 parts and 1 part of Kabon black in a Henshil mixer, the mixture was thoroughly melted and mixed at 95°C to 100°C with a hot roll, and a phenol novolac resin (softening point 98°C, phenolic hydroxyl group) was added. Equivalent weight 106) 57 parts, 2
- 0.5 part of undecyl imidazole was added, and the mixture was melt-mixed for 4 minutes. After cooling, the mixture was crushed and classified according to a conventional method to obtain a 40-mesh pass Φ powder bee. Gel of this powder at 150℃ □
The curing time and curing time were measured on a hot plate at 150°C, DS
Measured at C. Furthermore, this powder was completely hardened.
・After that, TMA (Thermal Mechanical
The glass transition temperature was measured using an analyzer). The results are shown in Table 2.

この粉体を常温、１００気圧で１．５　Ｘ　８　Ｘ　８
（Ｉｌｌ）のペレット状に成形して１．ＯＸ　５　Ｘ　
５　（ｍｍ）の鋼板上にのせ、１５０℃雰囲気下で封止
してその被覆状態を評価したところ、エツジ部も含め良
好な被覆性を示した。更にこの粉体０．３５　ｇを常温
１００気圧で直径１３＋＋ｍのペレット状に作成し、１
５０℃オーブン中に設置された１０°に傾斜した脱脂し
たみがき鋼板（１，０Ｘ７０Ｘ３００龍、３０分以上放
置）の上に作成した錠剤を置き、次式により流れ性を評
価した。This powder is 1.5 x 8 x 8 at room temperature and 100 atm.
(Ill) molded into pellets 1. OX5X
The coating was placed on a 5 mm thick steel plate, sealed in an atmosphere of 150° C., and the coating state was evaluated, and it showed good coverage including the edges. Furthermore, 0.35 g of this powder was made into pellets with a diameter of 13++ m at room temperature and 100 atm.
The prepared tablet was placed on a degreased polished steel plate (1.0 x 70 x 300 dragon, left for 30 minutes or more) tilted at 10° in a 50°C oven, and flowability was evaluated using the following formula.

錠剤の厚み（酊） 以上評価した結果を第２表に示した。Tablet thickness (drunk) The results of the above evaluation are shown in Table 2.

また得られた粉末及びペレットによりＩＣパッケージ（
４２ピンＤＩＰ＞を封止し半導体装置を得、１５０℃１
０分と一５０℃１０分を１サイクルとする冷熱サイクル
試験を５０サイクル実施し、装置にクランクが発生しな
かったものをＯ、クラックが発生したものを×とした。In addition, the obtained powder and pellets can be used to package IC packages (
42-pin DIP> was sealed to obtain a semiconductor device, and heated at 150°C.
A cooling/heating cycle test was conducted for 50 cycles in which one cycle was 0 minutes and 10 minutes at -50°C, and the results were rated O if no cranking occurred in the device, and rated X if cracks occurred.

実施例２ 第１表に示した原料組成比（部）に於いて実施例１と同
様に作成、並びに評価を行った。その結果を第２表に示
した。Example 2 Production and evaluation were performed in the same manner as in Example 1 using the raw material composition ratios (parts) shown in Table 1. The results are shown in Table 2.

比較例１ 第１表に示した原料組成比（部）に於いて、非結晶性エ
ポキシ樹脂であるビスフェノールＡ型エポキシ樹脂（エ
ポキシ樹脂Ｂ、エポキシ当量６５０）１００部、熔融シ
リカ粉末１８０部、シランカップリング剤（Ａ−１８６
）　２．５部、カーボンブランク１部とをヘンシルミキ
サーで予備混合した後、熱ロールにより９５℃〜１００
℃で充分溶融混合した後、冷却後常法に従い粉砕した後
、２−ウンデシルイミダゾール１部を加えヘンシルミキ
サーで乾式混合して粉体を得た。その結果を第２表に示
した。Comparative Example 1 In the raw material composition ratio (parts) shown in Table 1, 100 parts of bisphenol A type epoxy resin (epoxy resin B, epoxy equivalent: 650), which is an amorphous epoxy resin, 180 parts of fused silica powder, and silane. Coupling agent (A-186
) 2.5 parts and 1 part of carbon blank were premixed using a Henshil mixer, and then heated to 95°C to 100°C using a hot roll.
After sufficiently melting and mixing at .degree. C., the mixture was cooled and pulverized according to a conventional method, and 1 part of 2-undecylimidazole was added thereto and dry mixed using a Henschel mixer to obtain a powder. The results are shown in Table 2.

比較例２及び３ 第１表に示した原料組成比（部）に於いて、実施例１と
同様に作成、評価を行った。その結果を第２表に示した
。Comparative Examples 2 and 3 Comparative Examples 2 and 3 were prepared and evaluated in the same manner as in Example 1, using the raw material composition ratios (parts) shown in Table 1. The results are shown in Table 2.

第１表 ※１：三弗化硼素／エチルアミン 第２表 〔効果〕 上記表の結果からも明らかな通り、本発明ペレット組成
物は作業性の良い且つ品質の安定したものである。Table 1 *1: Boron trifluoride/ethylamine Table 2 [Effects] As is clear from the results in the above table, the pellet composition of the present invention has good workability and stable quality.

（以上）(that's all)

Claims (5)

【特許請求の範囲】[Claims] （１）結晶性エポキシ樹脂、無機質充填剤及び硬化剤を
含有して成る組成物により被覆されていることを特徴と
する半導体封止装置。(1) A semiconductor encapsulation device characterized by being coated with a composition containing a crystalline epoxy resin, an inorganic filler, and a curing agent. （２）結晶性エポキシ樹脂１００重量部に対し、無機質
充填剤が１００〜３００重量部の配合されてなる特許請
求の範囲第１項記載の半導体封止装置。(2) The semiconductor encapsulation device according to claim 1, wherein 100 to 300 parts by weight of an inorganic filler is blended with 100 parts by weight of the crystalline epoxy resin. （３）結晶性エポキシ樹脂が、下記構造式 ▲数式、化学式、表等があります▼ （但しＲはＨまたはＣＨ＿３を示す） で表わせる４、４′、−ビス（２″、３″−エポキシプ
ロポキシ）−３、３′、５、５′−テトラメチルビフェ
ニルである特許請求の範囲第１、２項記載の半導体封止
装置。(3) Crystalline epoxy resin is 4,4',-bis(2'',3''-epoxy The semiconductor sealing device according to claims 1 and 2, wherein the compound is propoxy)-3,3',5,5'-tetramethylbiphenyl. （４）被覆前の組成物が粉末状であることを特徴とする
特許請求の範囲第１〜３項記載の半導体被覆装置。(4) The semiconductor coating device according to any one of claims 1 to 3, wherein the composition before coating is in powder form. （５）被覆前の組成物がペレット状であることを特徴と
する特許請求の範囲第１〜３項記載の半導体被覆装置。(5) The semiconductor coating device according to any one of claims 1 to 3, wherein the composition before coating is in the form of pellets.
JP60102302A 1985-05-14 1985-05-14 Semiconductor sealing device Pending JPS61259552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60102302A JPS61259552A (en) 1985-05-14 1985-05-14 Semiconductor sealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60102302A JPS61259552A (en) 1985-05-14 1985-05-14 Semiconductor sealing device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP25941393A Division JPH0726120A (en) 1993-09-22 1993-09-22 Semiconductor-sealed device

Publications (1)

Publication Number Publication Date
JPS61259552A true JPS61259552A (en) 1986-11-17

Family

ID=14323810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60102302A Pending JPS61259552A (en) 1985-05-14 1985-05-14 Semiconductor sealing device

Country Status (1)

Country Link
JP (1) JPS61259552A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6465116A (en) * 1987-09-04 1989-03-10 Toray Industries Resin composition for semiconductor sealing
JPS6487616A (en) * 1987-09-28 1989-03-31 Toray Industries Resin composition for sealing semiconductor
JPH01230619A (en) * 1988-03-11 1989-09-14 Yuka Shell Epoxy Kk Epoxy resin composition for sealing
JPH0291965A (en) * 1988-09-29 1990-03-30 Nitto Denko Corp Semiconductor device
JPH0290680A (en) * 1988-09-28 1990-03-30 Nec Corp Dual gate hetero-junction bipolar transistor
JPH0291966A (en) * 1988-09-29 1990-03-30 Nitto Denko Corp Semiconductor device
JPH0299514A (en) * 1988-10-06 1990-04-11 Toray Ind Inc Epoxy based composition having heat resistance to solder
JPH0299551A (en) * 1988-10-06 1990-04-11 Toray Ind Inc Epoxy-based resin composition
JPH02101761A (en) * 1988-10-08 1990-04-13 Nitto Denko Corp Semiconductor device
JPH02258829A (en) * 1989-03-30 1990-10-19 Toray Ind Inc Epoxy resin composition
JPH0451548A (en) * 1990-06-19 1992-02-20 Nitto Denko Corp Semiconductor device
JPH04202555A (en) * 1990-11-30 1992-07-23 Toray Ind Inc Epoxy resin composition for sealing semiconductor
JP2001288338A (en) * 2000-04-10 2001-10-16 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839677A (en) * 1981-09-02 1983-03-08 Mitsubishi Petrochem Co Ltd Novel polyepoxy compound
JPS6147725A (en) * 1984-08-16 1986-03-08 Yuka Shell Epoxy Kk Epoxy resin composition for sealing semiconductor
JPS6198726A (en) * 1984-10-19 1986-05-17 Mitsubishi Petrochem Co Ltd Epoxy resin composition for sealing electronic parts

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839677A (en) * 1981-09-02 1983-03-08 Mitsubishi Petrochem Co Ltd Novel polyepoxy compound
JPS6147725A (en) * 1984-08-16 1986-03-08 Yuka Shell Epoxy Kk Epoxy resin composition for sealing semiconductor
JPS6198726A (en) * 1984-10-19 1986-05-17 Mitsubishi Petrochem Co Ltd Epoxy resin composition for sealing electronic parts

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6465116A (en) * 1987-09-04 1989-03-10 Toray Industries Resin composition for semiconductor sealing
JPS6487616A (en) * 1987-09-28 1989-03-31 Toray Industries Resin composition for sealing semiconductor
JPH01230619A (en) * 1988-03-11 1989-09-14 Yuka Shell Epoxy Kk Epoxy resin composition for sealing
JPH0290680A (en) * 1988-09-28 1990-03-30 Nec Corp Dual gate hetero-junction bipolar transistor
JPH0291965A (en) * 1988-09-29 1990-03-30 Nitto Denko Corp Semiconductor device
JPH0291966A (en) * 1988-09-29 1990-03-30 Nitto Denko Corp Semiconductor device
JPH0299514A (en) * 1988-10-06 1990-04-11 Toray Ind Inc Epoxy based composition having heat resistance to solder
JPH0299551A (en) * 1988-10-06 1990-04-11 Toray Ind Inc Epoxy-based resin composition
JPH02101761A (en) * 1988-10-08 1990-04-13 Nitto Denko Corp Semiconductor device
JPH02258829A (en) * 1989-03-30 1990-10-19 Toray Ind Inc Epoxy resin composition
JPH0451548A (en) * 1990-06-19 1992-02-20 Nitto Denko Corp Semiconductor device
JPH04202555A (en) * 1990-11-30 1992-07-23 Toray Ind Inc Epoxy resin composition for sealing semiconductor
JP2001288338A (en) * 2000-04-10 2001-10-16 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device

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