JPS61189642A - Plasma reactor - Google Patents

Abstract

PURPOSE:To obtain the titled apparatus which can process a plurality of wafers at a time without deterioration in the uniformity of reaction by a method wherein reaction chambers are provided so as to utilize the gas plasma generated and branched in a plasma generation chamber or generated in a plurality of plasma generation chambers under the same condition. CONSTITUTION:Two plasma generation chambers 1a, 1b are provided, and magnetic coils 2a, 2b are wound around each. When a microwave power is impressed through a microwave introduction port 5 with the flow of a reaction gas through a gas introduction port 3, a high-density gas plasma generates by the induction of electron-cyclotron resonance under the same condition in each of the generation chambers 2a, 2b. The gas plasma of the same condition generated in each of them 2a, 2b is guided by lead-out electrodes 6a, 6b, 6c, 6d to the surfaces of samples 9a, 9b on sample holding tables 8a, 8b installed to reaction chambers 7a, 7b, resulting in etching or the formation of thin films. As a result, two wafers can be processed at a time, and the processing capacity can be improved.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a plasma generation chamber that utilizes electron cyclotron resonance, which is being used in the manufacturing process of semiconductor devices, particularly in the etching process or thin film forming process. It relates to a plasma reactor.

[Conventional technology]

FIG. 3 is a cross-sectional view showing a conventional plasma reaction device using electron cyclotron resonance. In the figure, 1 is a plasma generation chamber, 2 is a magnetic coil, 3 is a gas inlet, and 4 is a
5 is an exhaust port, 5 is a microwave inlet, 7 is a reaction chamber, 8 is a sample holding stand provided in the reaction chamber 7, and 9 is a sample.

Next, the operation will be explained.

The plasma generation chamber 1 is equipped with a magnetic coil 2 around it.
A reactive gas is introduced into the plasma generation chamber 1 through the gas introduction port 3, while exhaust is performed through the exhaust port 4, and the plasma generation chamber 1 is
Maintain the specified gas pressure inside.

Then, a microwave of 2.45 GHz is introduced from a microwave generator (not shown) through the microwave inlet 5, and the interaction with this microwave causes electron cyclotron resonance (Electron Cyclotron Resonance).
When a non-uniform magnetic field capable of producing a magnetic field (ECR) is generated by the magnetic coil 2,
A high-density gas plasma can be generated by collision of spirally moving electrons within the plasma generation chamber 1. The gas plasma generated in this plasma generation chamber 1 is
The sample 9 is guided into the reaction chamber 7 using the extraction electrodes 6a and 6b, and a thin film is formed on the surface of the sample 9 on the sample holder 8 installed in the reaction chamber 7, or the thin film formed on the surface of the sample 9 is etched. Let's do it. In addition, if you do etching here,
Whether or not to form a thin film is determined by changing the type of gas used, gas pressure, and the magnitude of microwave power.

[Problem that the invention seeks to solve]

The conventional plasma reactor using an ECR type ion source is configured to hold one sample 9 on the sample holder 8 as described above, so its throughput is low and it is not suitable for production lines that perform mass processing. This was a problem when introducing it. In order to improve this processing capacity, it is possible to place multiple samples on the sample holder 8, but this method is not practical as it may deteriorate the uniformity of the reaction within the sample surface. do not have.

This invention was made to solve the above-mentioned problems, and an object thereof is to provide a plasma reaction apparatus that can process a plurality of wafers at once.

[Means for solving problems]

The plasma reaction device according to the present invention is provided with a plurality of reaction chambers so that gas plasma generated in one plasma generation chamber and branched, or generated under the same conditions in a plurality of plasma ordering chambers can be used, and each of the plasma reaction chambers is Each wafer is processed in the reaction chamber.

[Effect]

In this invention, gas from one plasma generation chamber or a plurality of plasma generation chambers that generate plasma under the same conditions is branched or supplied to a plurality of reaction chambers, and one wafer is generated in each reaction chamber. It is processed. Therefore, wafer throughput can be improved without deteriorating the uniformity of the reaction.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows a plasma reactor according to an embodiment of the invention,
In the figure, the same symbols as in FIG. 3 indicate the same parts. la, lb
are provided on both sides of the gas inlet 3 and the microwave inlet 5 to generate gas plasma (
a plasma generation chamber capable of generating (ECR ions), 2a;

2b is a magnetic coil wound around the plasma generation chambers 1a and lb; 6a, 5b, 5c and 6d are extraction electrodes for extracting ions from the plasma generation chambers 1a and lb, respectively; 7a and 7b are the plasma reaction chambers, respectively. 1a
, 1b are reaction chambers provided connected to the reaction chambers 7a, 7b, and sample holding stands 9a, 9 are provided in the reaction chambers 7a, 7b.
b is a sample placed on sample holding stands 8a and 8b.

Next, the operation will be explained.

As shown in Figure 1, there are two plasma generation chambers (Ia, l).
b) Provide magnetic coils 2a, 2 around each
Roll up b. When microwave power is applied from the microwave inlet 5 while flowing a reactive gas through the gas inlet 3, electron microtron resonance is induced under the same conditions in each of the generation chambers 2a and 2b, generating high-density gas plasma. do.

The gas plasma generated under the same conditions in the respective generation chambers 2a and 2b is extracted from the extraction electrodes 6a and 6b.

6c and 6d are guided to the surfaces of samples 9a and 9b on sample holders 8a and 8b installed in reaction chambers 7a and 7b, where etching or thin film formation is performed. As a result, this apparatus can process two wafers at once, improving processing capacity.

Note that in the above embodiment, the plasma generation chamber 1a.

Although the case where lb is made of a straight pipe is shown, it may be made of a curved pipe as in the second embodiment of the present invention shown in FIG.

Further, in the above embodiment, two plasma generation chambers 1a and lb
and 2 reaction chambers? Although the case where a and 7b are provided is shown,
Plasma generation chambers and reaction chambers may be provided in multiple directions from a three-dimensional perspective, such as four directions or six directions, and in this case, it becomes possible to process a large number of sheets.

Alternatively, there may be only one plasma generation chamber, and the gas plasma generated there may be branched and guided to a plurality of reaction chambers.

Furthermore, in the above embodiment, the extraction electrodes 6a, 6b, 6c, and 6d were provided in order to guide the gas plasma generated in the plasma generation chamber to the surface of the sample 9 in the reaction chamber. In some cases, the gas plasma can be sufficiently guided to the sample surface without the electrode, and in this case, it may be omitted.

〔Effect of the invention〕

As described above, according to the plasma reaction device of the present invention, reactive gas plasma generated in one plasma generation chamber and branched, or reactive gas plasma generated under the same conditions in a plurality of plasma generation chambers. Since a plurality of reaction chambers are provided so that wafers can be used, a plurality of wafers can be processed at the same time, which has the effect of improving processing capacity.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional side view showing a plasma reactor according to an embodiment of the present invention, FIG. 2 is a cross-sectional side view of a plasma reactor according to another embodiment of the present invention, and FIG. 3 is a conventional plasma reactor. FIG. la, lb... plasma generation chamber, 2a, 2b... magnetic coil, 3... gas inlet, 4... exhaust port, 5...
...Microwave inlet, 7a, 7b...Reaction chamber, 8.
...Sample holding stand, 9...Sample. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) One or more plasma generation chambers that generate a high-density gas plasma inside by generating local electron cyclotron resonance through the interaction of microwaves and a non-uniform static magnetic field, and the one plasma generation chamber. A plasma reaction characterized by comprising a reaction chamber for etching a sample or forming a thin film using gas plasma branched from a generation chamber or gas plasma under the same conditions generated in each of a plurality of plasma generation chambers. Device.