JPS61155377U - - Google Patents

Info

Publication number
JPS61155377U
JPS61155377U JP3821985U JP3821985U JPS61155377U JP S61155377 U JPS61155377 U JP S61155377U JP 3821985 U JP3821985 U JP 3821985U JP 3821985 U JP3821985 U JP 3821985U JP S61155377 U JPS61155377 U JP S61155377U
Authority
JP
Japan
Prior art keywords
bell gear
epitaxial growth
bellgear
growth apparatus
silicon epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3821985U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3821985U priority Critical patent/JPS61155377U/ja
Publication of JPS61155377U publication Critical patent/JPS61155377U/ja
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案を実施したシリコンエピタキシ
ヤル成長装置の構造例断面図、第2図は第1図中
の冷却バンドの斜視図、第3図は従来のシリコン
エピタキシヤル成長装置のベルジヤーの構造断面
図である。 1……内部ベルジヤ、2……外部水冷ステンレ
ス鋼ベルジヤ、3……冷却バンド、7……冷却水
の入口と出口。
Fig. 1 is a cross-sectional view of a structural example of a silicon epitaxial growth apparatus implementing the present invention, Fig. 2 is a perspective view of the cooling band in Fig. 1, and Fig. 3 is a structure of a bell gear of a conventional silicon epitaxial growth apparatus. FIG. 1... Internal bell gear, 2... External water-cooled stainless steel bell gear, 3... Cooling band, 7... Cooling water inlet and outlet.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 内外2重のベルジヤを用いるシリコンエピタキ
シヤル成長装置の石英製ドーム形インナーベルジ
ヤの外表面に、可撓性に富みかつ熱伝導の良好な
金属材料にて製作しその内部に冷却用水を流通さ
せた帯状の冷却バンドを渦巻状にかつ前記インナ
ーベルジヤの外表面に密着させて巻きつけたこと
を特徴とするシリコンエピタキシヤル成長装置の
インナーベルジヤの冷却装置。
The outer surface of the quartz dome-shaped inner bell gear of a silicon epitaxial growth apparatus that uses a double inner and outer bell gear is made of a metal material that is highly flexible and has good thermal conductivity, and cooling water is allowed to flow inside the inner bell gear. 1. A cooling device for an inner bellgear of a silicon epitaxial growth apparatus, characterized in that a belt-shaped cooling band is spirally wound in close contact with the outer surface of the inner bellgear.
JP3821985U 1985-03-19 1985-03-19 Pending JPS61155377U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3821985U JPS61155377U (en) 1985-03-19 1985-03-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3821985U JPS61155377U (en) 1985-03-19 1985-03-19

Publications (1)

Publication Number Publication Date
JPS61155377U true JPS61155377U (en) 1986-09-26

Family

ID=30545016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3821985U Pending JPS61155377U (en) 1985-03-19 1985-03-19

Country Status (1)

Country Link
JP (1) JPS61155377U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9468630B2 (en) 2013-07-12 2016-10-18 Knopp Biosciences Llc Compositions and methods for treating conditions related to increased eosinophils
US9512096B2 (en) 2011-12-22 2016-12-06 Knopp Biosciences, LLP Synthesis of amine substituted 4,5,6,7-tetrahydrobenzothiazole compounds

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234669A (en) * 1975-09-11 1977-03-16 Kokusai Electric Co Ltd Gaseous phase growing apparatus of semiconductor
JPS5317316U (en) * 1976-07-22 1978-02-14
JPS59111997A (en) * 1982-12-14 1984-06-28 Kyushu Denshi Kinzoku Kk Device for epitaxial growth

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234669A (en) * 1975-09-11 1977-03-16 Kokusai Electric Co Ltd Gaseous phase growing apparatus of semiconductor
JPS5317316U (en) * 1976-07-22 1978-02-14
JPS59111997A (en) * 1982-12-14 1984-06-28 Kyushu Denshi Kinzoku Kk Device for epitaxial growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9512096B2 (en) 2011-12-22 2016-12-06 Knopp Biosciences, LLP Synthesis of amine substituted 4,5,6,7-tetrahydrobenzothiazole compounds
US9468630B2 (en) 2013-07-12 2016-10-18 Knopp Biosciences Llc Compositions and methods for treating conditions related to increased eosinophils

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