JPS61155377U - - Google Patents
Info
- Publication number
- JPS61155377U JPS61155377U JP3821985U JP3821985U JPS61155377U JP S61155377 U JPS61155377 U JP S61155377U JP 3821985 U JP3821985 U JP 3821985U JP 3821985 U JP3821985 U JP 3821985U JP S61155377 U JPS61155377 U JP S61155377U
- Authority
- JP
- Japan
- Prior art keywords
- bell gear
- epitaxial growth
- bellgear
- growth apparatus
- silicon epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000498 cooling water Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第1図は本考案を実施したシリコンエピタキシ
ヤル成長装置の構造例断面図、第2図は第1図中
の冷却バンドの斜視図、第3図は従来のシリコン
エピタキシヤル成長装置のベルジヤーの構造断面
図である。
1……内部ベルジヤ、2……外部水冷ステンレ
ス鋼ベルジヤ、3……冷却バンド、7……冷却水
の入口と出口。
Fig. 1 is a cross-sectional view of a structural example of a silicon epitaxial growth apparatus implementing the present invention, Fig. 2 is a perspective view of the cooling band in Fig. 1, and Fig. 3 is a structure of a bell gear of a conventional silicon epitaxial growth apparatus. FIG. 1... Internal bell gear, 2... External water-cooled stainless steel bell gear, 3... Cooling band, 7... Cooling water inlet and outlet.
Claims (1)
シヤル成長装置の石英製ドーム形インナーベルジ
ヤの外表面に、可撓性に富みかつ熱伝導の良好な
金属材料にて製作しその内部に冷却用水を流通さ
せた帯状の冷却バンドを渦巻状にかつ前記インナ
ーベルジヤの外表面に密着させて巻きつけたこと
を特徴とするシリコンエピタキシヤル成長装置の
インナーベルジヤの冷却装置。 The outer surface of the quartz dome-shaped inner bell gear of a silicon epitaxial growth apparatus that uses a double inner and outer bell gear is made of a metal material that is highly flexible and has good thermal conductivity, and cooling water is allowed to flow inside the inner bell gear. 1. A cooling device for an inner bellgear of a silicon epitaxial growth apparatus, characterized in that a belt-shaped cooling band is spirally wound in close contact with the outer surface of the inner bellgear.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3821985U JPS61155377U (en) | 1985-03-19 | 1985-03-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3821985U JPS61155377U (en) | 1985-03-19 | 1985-03-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61155377U true JPS61155377U (en) | 1986-09-26 |
Family
ID=30545016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3821985U Pending JPS61155377U (en) | 1985-03-19 | 1985-03-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61155377U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9468630B2 (en) | 2013-07-12 | 2016-10-18 | Knopp Biosciences Llc | Compositions and methods for treating conditions related to increased eosinophils |
US9512096B2 (en) | 2011-12-22 | 2016-12-06 | Knopp Biosciences, LLP | Synthesis of amine substituted 4,5,6,7-tetrahydrobenzothiazole compounds |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5234669A (en) * | 1975-09-11 | 1977-03-16 | Kokusai Electric Co Ltd | Gaseous phase growing apparatus of semiconductor |
JPS5317316U (en) * | 1976-07-22 | 1978-02-14 | ||
JPS59111997A (en) * | 1982-12-14 | 1984-06-28 | Kyushu Denshi Kinzoku Kk | Device for epitaxial growth |
-
1985
- 1985-03-19 JP JP3821985U patent/JPS61155377U/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5234669A (en) * | 1975-09-11 | 1977-03-16 | Kokusai Electric Co Ltd | Gaseous phase growing apparatus of semiconductor |
JPS5317316U (en) * | 1976-07-22 | 1978-02-14 | ||
JPS59111997A (en) * | 1982-12-14 | 1984-06-28 | Kyushu Denshi Kinzoku Kk | Device for epitaxial growth |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9512096B2 (en) | 2011-12-22 | 2016-12-06 | Knopp Biosciences, LLP | Synthesis of amine substituted 4,5,6,7-tetrahydrobenzothiazole compounds |
US9468630B2 (en) | 2013-07-12 | 2016-10-18 | Knopp Biosciences Llc | Compositions and methods for treating conditions related to increased eosinophils |