JPS61144078A - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting elementInfo
- Publication number
- JPS61144078A JPS61144078A JP59265771A JP26577184A JPS61144078A JP S61144078 A JPS61144078 A JP S61144078A JP 59265771 A JP59265771 A JP 59265771A JP 26577184 A JP26577184 A JP 26577184A JP S61144078 A JPS61144078 A JP S61144078A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- gap
- conductive layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 150000001875 compounds Chemical class 0.000 claims abstract description 30
- 239000012535 impurity Substances 0.000 claims abstract description 29
- 229910021480 group 4 element Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 abstract description 13
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、緑色から紫色にかけての発光を示す。[Detailed description of the invention] [Technical field of invention] The present invention exhibits light emission ranging from green to violet.
発光ダイオードやレーザダイオードなどの半導体発光素
子に関する。It relates to semiconductor light emitting devices such as light emitting diodes and laser diodes.
光の三原色である赤、緑、青の中で、赤色と緑色に関し
ては■−ｖ族化合物半導体を用いた発光素子が開発され
、既に量産が行われている。残る青色発光素子について
は、開発への要望が強いにも拘らず依然商品化されてい
ない。Among the three primary colors of light, red, green, and blue, light-emitting elements using ■-V group compound semiconductors have been developed for red and green, and are already being mass-produced. The remaining blue light-emitting elements have not yet been commercialized, despite strong demand for their development.
青色発光素子の半導体材料としては、広い禁制帯幅を有
するＩＦ−ＶＩ族化合物のｚｎｓ、ｚｎｓｅ。Semiconductor materials for blue light-emitting elements include zns and znse, which are IF-VI group compounds having a wide forbidden band width.
■−ｖ族化合物のＧａＮ、ＩＶ族化合物のＳｉＣなどが
従来より検討されている。これらの材料のうちＺｎＳ、
Ｚｎ５ｅは、■−ｖ族化合物のＧａＰ。(2) GaN, which is a group V compound, and SiC, which is a group IV compound, have been studied in the past. Among these materials, ZnS,
Zn5e is GaP, which is a ■-v group compound.
ＧａＡＳと格子定数が近く、これらＧａＰまたはＧａＡ
Ｓ結晶を基板として大面積かつ良質の結晶層が得られる
こと、更に容易に青色発光が得られること等から、特に
有望視されている。ところが、ＺｎＳ、Ｚｎ５ｅは共に
ｎ型導電性は得られるが、ｎ型導電性が得られない、と
いう問題を抱えている。このため、ｐｎ接合が得られな
いことが、青色発光素子の実用化を遅らせている主因と
な、つている。These GaP or GaA have similar lattice constants to GaAS.
It is viewed as particularly promising because a large-area, high-quality crystal layer can be obtained using S crystal as a substrate, and blue light emission can be easily obtained. However, both ZnS and Zn5e have the problem that although they can provide n-type conductivity, they cannot provide n-type conductivity. Therefore, the inability to obtain a pn junction is the main reason for delaying the practical application of blue light emitting devices.
ＺｎＳ、Ｚｎ５ｅにおいて何故ｎ型導電性が得られない
か、その原因については未だ確かな説はないが、おおむ
ね次のような理由が考えられる。Although there is still no definite theory as to why n-type conductivity cannot be obtained in ZnS and Zn5e, the following reasons are generally considered.
第１は、ｚｎｓ、Ｚｎ５ｅにおいては、アクセプタ不純
物の中で価電子帯に空孔を生じるに充分浅い不純物準位
を作るものが少ないとと、第２は、たとえ浅い不純物準
位を作るアクセプタ不純物が存在しても、それが結晶中
に添加されると、いわゆる自己補償効果によってドナー
型の欠陥生成を誘発してしまうことである。The first is that in Zns and Zn5e, there are few acceptor impurities that create an impurity level shallow enough to create a vacancy in the valence band, and the second is that even if there are acceptor impurities that create a shallow impurity level, Even if it exists, if it is added to the crystal, it will induce the formation of donor-type defects due to the so-called self-compensation effect.
本発明は上記した問題を解決して、禁制帯幅の広い■−
■族化合物半導体を用いて良好なｐｎ接合を構・成し、
以て高輝度の青色発光を可能とした半導体発光素子を提
供することを目的とする。The present invention solves the above-mentioned problems and provides a wide forbidden band.
Construct and form a good pn junction using a group compound semiconductor,
An object of the present invention is to provide a semiconductor light emitting device that can emit blue light with high brightness.
本発明は、発光素子のｐｎ接合を構成するｐ型環電層を
、■−ｖ族化合物半導体とＩＩ−ＶＩ族化合物半導体と
を交互に積層した超格子構造としたことを骨子とする。The gist of the present invention is that the p-type ring conductive layer constituting the pn junction of a light emitting device has a superlattice structure in which group ■-V compound semiconductors and group II-VI compound semiconductors are alternately laminated.
このとき、ｐ型環電層を構成するためのアクセプタ不純
物は、ＩＩ−ＶＩ族化合物半導体または■−ｖ族化合物
半導体のいずれか少なくとも一方に添加されていればよ
い。At this time, the acceptor impurity for forming the p-type ring conductive layer may be added to at least one of the II-VI group compound semiconductor or the ■-V group compound semiconductor.
（発明の効果）
本発明によれば、超格子構造の導入により、広いバンド
ギャップを有する化合物半導体からなるｐ型環電層が得
られ、これにより緑色から紫色にわたって高輝度の発光
を示す発光素子が得られる。(Effects of the Invention) According to the present invention, by introducing a superlattice structure, a p-type ring conductive layer made of a compound semiconductor having a wide bandgap can be obtained, and thereby a light-emitting element that emits high-intensity light in a range from green to violet can be obtained. is obtained.
（発明の実施例） 以下本発明の詳細な説明する。(Example of the invention) The present invention will be explained in detail below.
第１図は一実施例の素子構造を示す。図において、１は
ｎ型ＧａＰ結晶基板であり、２はこの基板１上にエピタ
キシャル成長された。ドナー不純物とＩ、、ｒ／’ｌが
添加されたｎ型Ｚｎ５ｚＳｅｌ−２層（０≦２≦１）で
あって、このｎ型ｚｎ３ｚＳｅｓ−２層２上に超格子構
造を持つｐ型理電層３が形成されている。４はｐ側電極
、５はｎ側電極である。FIG. 1 shows the device structure of one embodiment. In the figure, 1 is an n-type GaP crystal substrate, and 2 is epitaxially grown on this substrate 1. An n-type Zn5zSel-2 layer (0≦2≦1) doped with donor impurities and I,, r/'l, and a p-type physical electronic layer with a superlattice structure on this n-type Zn3zSes-2 layer 2. Layer 3 is formed. 4 is a p-side electrode, and 5 is an n-side electrode.
第２図はｐ型理電層３の部分を拡大して示す。FIG. 2 shows an enlarged view of the p-type physical layer 3. As shown in FIG.
即ちｐ型導電型層３は、■−ｖ族化合物半導体であるノ
ンドープのＧａＰ層ｓｉｔ （ｔ−１，２゜・・・、
Ｎ）と、アクセプタ不純物としてＡｇを１０１６〜１０
”／３３程度添加したＩＩ−ＶＩ族化合物半導体として
のＺｎ３層３２ｉ （ｉ＝１゜２、・・・、Ｎ）が交
互に積層されて超格子を構成している。Ｚｎ３層３２ｉ
の厚みＬＢおよびＧａＰ層３１１の厚みＬｚはそれぞれ
５〜４０人程度とする。このような超格子構造は例えば
、有機金属化合物を用いた気相成長法（ＭＯＣＶＤ）に
より得られる。That is, the p-type conductivity type layer 3 is a non-doped GaP layer sit (t-1, 2°...,
N) and Ag as an acceptor impurity at 1016-10
Zn3 layers 32i (i=1°2, . . . , N) doped with about 1/33 as a II-VI group compound semiconductor are alternately stacked to form a superlattice.Zn3 layers 32i
The thickness LB of the GaP layer 311 and the thickness Lz of the GaP layer 311 are each about 5 to 40 people. Such a superlattice structure can be obtained, for example, by a chemical vapor deposition method (MOCVD) using an organometallic compound.
第３図はこの様な超格子構造をもつｐ型理電層３のバン
ド構造を示す。Ｚｎ３層３２ｉの１ｉｌｌｉ電子帯の頂
上は、ＧａＰ層３１ｉの価電子帯の頂上がら０．９〜１
．２ｅＶ程度低いところに位置する。FIG. 3 shows the band structure of the p-type physical electronic layer 3 having such a superlattice structure. The top of the 1illi electron band of the Zn3 layer 32i is 0.9 to 1 from the top of the valence band of the GaP layer 31i.
．． It is located at a low level of about 2 eV.
一方、ＡＱアクセプタの不純物準位は、Ｚｎ８層３２１
の価電子帯の頂上から０．５５〜０．７０ｅＶ高いとこ
ろに位置する。従ってＺｎ３層３２ｉに添加するＡＱ不
純物の濃度を１０１”／α３以上と高くしておけば、こ
の超格子構造部の平均的なフェルミ・レベルＥＦは、第
３因に示すようにＧａＰ層３１ｉの価電子帯の頂上より
低い位置になる。これによりＧａＰ層３１ｉには、ＡＱ
不純物濃度と同程度の空孔が形成される。この空孔は超
格子の積層方向に移動する時ＺｎＳ層３２１が障壁とな
るが、Ｚｎ８層３２１の厚さＬＢを５〜３０人の範囲に
選べば、障壁をトンネルで扱けてい〜く確率が充分高く
なり、超格子積層方向に高い伝導度をもつｎ型導電性が
得られることになる。第４図は、ＧａＰ層３１ｉの厚み
Ｌｚを２０人とし、７０８層３２ｉのＡＱ添加濃度を１
０”／（：ＩＩ３として、Ｚｎ３層３２ｉの厚みＬｅを
変えた時の超格子構造の導電率特性を示している。On the other hand, the impurity level of the AQ acceptor is
It is located 0.55 to 0.70 eV higher than the top of the valence band. Therefore, if the concentration of AQ impurity added to the Zn3 layer 32i is increased to 101''/α3 or more, the average Fermi level EF of this superlattice structure will be lower than that of the GaP layer 31i, as shown in the third factor. The position is lower than the top of the valence band.As a result, the GaP layer 31i has AQ
Vacancies are formed at the same level as the impurity concentration. When these vacancies move in the stacking direction of the superlattice, the ZnS layer 321 becomes a barrier, but if the thickness LB of the Zn8 layer 321 is selected in the range of 5 to 30 layers, the probability that the barrier can be treated as a tunnel increases. becomes sufficiently high, and n-type conductivity with high conductivity in the superlattice stacking direction is obtained. In FIG. 4, the thickness Lz of the GaP layer 31i is 20 layers, and the AQ concentration of the 708 layer 32i is 1.
0''/(:II3) indicates the conductivity characteristics of the superlattice structure when the thickness Le of the Zn3 layer 32i is changed.
この様に、ＺｎＳあるいはＺｎ５ｅバルク結晶では深い
不純物準位を形成してキャリアを生成しない不純物が、
本実施例の超格子構造においては有効的に浅いアクセプ
タ不純物準位として働き、正のキャリアを生成して、バ
ルク結晶では得られないｐ型導電層が得られる。なお本
実施例において、発光再結合を有効に行なわせるために
は、超格子構造からなるｐ型導電層３の厚みを０．２〜
３μｍ程度とすることが望ましい。In this way, in ZnS or Zn5e bulk crystals, impurities that form deep impurity levels and do not generate carriers,
In the superlattice structure of this example, it effectively functions as a shallow acceptor impurity level, generates positive carriers, and provides a p-type conductive layer that cannot be obtained with bulk crystals. In this example, in order to effectively perform radiative recombination, the thickness of the p-type conductive layer 3 having a superlattice structure is set to 0.2 to
It is desirable that the thickness be about 3 μm.
この様に構成された第１図の発光素子は、そのｐｎ接合
に順方向バイアスをかけると、主としてｎ型Ｚｎ５ｚＳ
ｅｔ−ｚ層２からｐ型導電層３へと電子が注入される。The light emitting device of FIG.
Electrons are injected from the et-z layer 2 to the p-type conductive layer 3.
この注入電子はｐ型環電層３内のＧａＰ層３１１におい
て空孔と発光再結合を起す。ＧａＰ層での発光は、重い
ホールのバンド（ｈｅａｖｙ ｈｏｌｅ ｂａｎｄ
）と軽いホールのバンド（ｌｉｇｈｔ ｈｏｌｅ
ｂａｎｄ ）が超格子において分離するために２ピー
ク構造となる。各々のピーク波長とＧａＰ層の厚さＬｚ
との関係を第５図に示す。These injected electrons cause radiative recombination with vacancies in the GaP layer 311 within the p-type ring conduction layer 3. The light emission in the GaP layer is caused by the heavy hole band (heavy hole band).
) and light hole band (light hole)
band ) are separated in the superlattice, resulting in a two-peak structure. Each peak wavelength and GaP layer thickness Lz
Figure 5 shows the relationship between
５１がｈｅａｖｙ ｈｏｌｅ ｂａｎｄによるもの
、５２が＋；ｇｈｔ ｈｏｌｅ ｂａｎｄによるも
のである。Ｌｚが小さくなるにつれて、量子効果のため
に発光は短波圧側にシフトし、発光色は二つのピークの
平均的な波長となり、Ｌｚが１５人程度で青色、１０人
程度で紫色となる。一方、ＧａＰ結晶はバルクの状態で
は間接遷移型であるが、超格子構造とすることによりプ
リルアン・ゾーンの折れ曲り効果（ｚｏｎｅ ｆｏｌ
ｄｉｎｇ ｅ４ｆｅｃｔ ）によって直接遷移型にな
る。このため発光の遷移確率が大きくなり、外部量子効
率が１％と高い値を示す。51 is due to heavy hole band, and 52 is due to +;ght hole band. As Lz becomes smaller, the emission shifts to the short wave pressure side due to quantum effects, and the emission color becomes the average wavelength of the two peaks, becoming blue when Lz is about 15 people and purple when it is about 10 people. On the other hand, GaP crystal is of indirect transition type in the bulk state, but by forming a superlattice structure, the bending effect of the Prillouin zone (zone fol.
ding e4fect) makes it a direct transition type. Therefore, the transition probability of light emission increases, and the external quantum efficiency exhibits a high value of 1%.
次に本発明の他の実施例を説明する。基本的な素子構造
は第１図と同じであるが、本実施例ではｐ型導電層３の
部分を第６図のようにする。即ち、アクセプタ不純物と
してＺｎを １Ｑ１Ｂ〜１０”／ｍ３程度添加したＧａ
Ｐ層３１１ ′と、ノンドープのＺｎ８層３２ｉ −を
交互に積層した超格子構造によりｐ型導電層３を構成し
ている。Next, another embodiment of the present invention will be described. The basic device structure is the same as that shown in FIG. 1, but in this embodiment, the p-type conductive layer 3 is arranged as shown in FIG. That is, Ga to which Zn is added as an acceptor impurity at about 1Q1B~10"/m3
The p-type conductive layer 3 has a superlattice structure in which P layers 311' and non-doped Zn8 layers 32i- are laminated alternately.
この実施例の素子におけるｐ型導電層３のバンド構造を
第７図に示す。ｚｎ不純物はバルクのＧａＰ結晶におい
ては浅いアクセプタ不純物としてｐ型導電層を形成する
。このようなバルク結晶において浅い位置に不純物レベ
ルを形成するものは、超格子においても、多少レベル位
置が変化するとしてもやはりバンド端近傍に浅い準位を
形成すると考えられる。従って第７図において、フェル
ミ・レベルはＧａＰ層の１ｉｌｌｉ電子帯の頂上近傍に
位置し、ＧａＰ層内に７ｎ不純物と同程度の空孔が生成
される。この空孔は先の実施例と同様に、各層の厚みを
選ぶことによりトンネルで抜けることができ、ｐ型理電
性に寄与することになる。そしてこの超格子構造のバン
ドギャップは量子効果のためにＧａＰ結晶のそれよりも
広いものとなり、ＧａＰ層の厚みを変化させることによ
って、先の実施例と同様の原理により緑色から紫色にか
けて効率の＾い発光特性を示す。FIG. 7 shows the band structure of the p-type conductive layer 3 in the device of this example. The zn impurity forms a p-type conductive layer as a shallow acceptor impurity in the bulk GaP crystal. It is thought that what forms an impurity level at a shallow position in such a bulk crystal also forms a shallow level near the band edge in the superlattice, even if the level position changes somewhat. Therefore, in FIG. 7, the Fermi level is located near the top of the 1illi electron band of the GaP layer, and vacancies of the same size as the 7n impurity are generated in the GaP layer. As in the previous embodiment, these holes can tunnel through by selecting the thickness of each layer, contributing to p-type physical conductivity. The bandgap of this superlattice structure is wider than that of the GaP crystal due to quantum effects, and by changing the thickness of the GaP layer, the efficiency can be increased from green to purple based on the same principle as in the previous example. It exhibits strong luminescent properties.
第８図は、ｐ型基板を出発基板とした実施例の素子構造
である。即ちｐ型ＧａＰ結晶基Ｆｉ８１を用いてこの上
に先の実施例と同様の超格子構造を持つｐ型環電層８２
を形成し、この上にｎ型Ｚｎ５ｚＳｅｔ−ｚ層８３を形
成したものである。FIG. 8 shows the device structure of an example in which a p-type substrate is used as a starting substrate. That is, a p-type GaP crystal group Fi81 is used, and a p-type ring conductive layer 82 having a superlattice structure similar to that of the previous embodiment is formed thereon.
is formed, and an n-type Zn5zSet-z layer 83 is formed thereon.
ＧａＰ基板８１側から光を取出すために、ＧａＰ基板８
１を裏面からエツチングして光取出し窓を設けている。In order to extract light from the GaP substrate 81 side, the GaP substrate 8
1 is etched from the back side to provide a light extraction window.
８４はｎ側電極、８５はｎ側電極である。84 is an n-side electrode, and 85 is an n-side electrode.
この実施例によっても先の二つの実施例と同様の優れた
発光特性を示す。This example also exhibits the same excellent light emitting characteristics as the previous two examples.
第９図は更に別の実施例の素子構造である。この実施例
では、ｎ型Ｚｎ５ｚＳｅ１−ｚ基板９１を用いてこの上
に先の実施例と同様に超格子構造を持つｐ型導電層９２
を形成している。９３はｐＩＩＪ電極、９４はｎ（ｌｌ
ｉ橿である。FIG. 9 shows the element structure of yet another embodiment. In this embodiment, an n-type Zn5zSe1-z substrate 91 is used, and a p-type conductive layer 92 having a superlattice structure is formed thereon as in the previous embodiment.
is formed. 93 is pIIJ electrode, 94 is n(ll
It's i.
この実施例によっても同様に良好な青色発光特性を示す
ことができる。This example also exhibits good blue light emission characteristics.
第１０図はダブルへテロ接合構造を用いた実施例の素子
構造を示す。これは第１図におけるＺｎ５ｚＳｅｔ−ｚ
層２の部分を、Ｚｎ３層２１とＺｎ５ｅ層２２の二層と
して、ｐ型１１３とｐ型ＺｎＳ層２１との間にダブルへ
テロ接合を構成している。FIG. 10 shows the device structure of an embodiment using a double heterojunction structure. This is Zn5zSet-z in Figure 1
The layer 2 is made up of two layers, a Zn3 layer 21 and a Zn5e layer 22, and a double heterojunction is formed between the p-type 113 and the p-type ZnS layer 21.
この実施例によっても先の各実施例と同様に良好な青色
発光特性を示す。This example also exhibits good blue light emission characteristics like the previous examples.
本発明は上記各実施例に限られるものではなく、更に以
下に列記するように種々変形実施することができる。The present invention is not limited to the above embodiments, and can be further modified in various ways as listed below.
■ 超格子構造のＩＩ−ＶＩ族化合物半導体物半導体と
して、一般的にＺｎ５ｙＳｅｔ−ｙ（０≦ｙ≦１）を用
い得る。またＺ ｎ Ｙ Ｃｄｓ −ｙ Ｓ （０≦ｙ
≦１）を用いることもできる。また超格子構造を構成す
る■−ｖ族化合物半導体として、一般的にＧａｘＡＲｔ
−ｘＰ（０≦ｘ≦１）を用いることができる。(2) Zn5ySet-y (0≦y≦1) can generally be used as a II-VI group compound semiconductor having a superlattice structure. Also, Z n Y Cds −y S (0≦y
≦1) can also be used. In addition, GaxARt is generally used as a ■-v group compound semiconductor that constitutes a superlattice structure.
−xP (0≦x≦1) can be used.
■ 超格子構造のＩ−ＶＩ族化合物半導体層のアクセプ
タ不純物として、ＡＱの他、ｌｉ、ｌ’４ａ。(2) In addition to AQ, li and l'4a are used as acceptor impurities in the I-VI group compound semiconductor layer having a superlattice structure.
Ｃｕなどの王族元素あるいはＰ、ＡＳなどのＶ族元素を
添加することができる。また■−ｖ族化合物半導体のア
クセプタ不純物としてＺｎの他、Ｂｅ、 Ｍｏなどの■
族元素または■族元素を添加してもよい。A royal element such as Cu or a V group element such as P or AS can be added. In addition to Zn, Be, Mo, etc. can be used as acceptor impurities for ■-V group compound semiconductors.
A group element or a group Ⅰ element may be added.
また実施例では、超格子の■−ｖ族化合物半導体または
ＩＩ−ＶＩ族化合物半導体の一方にのみアクセプタ不純
物を添加したが、両方にそれぞれアクセプタ不純物が添
加されてもよい。Further, in the embodiment, the acceptor impurity is added to only one of the ■-V group compound semiconductor and the II-VI group compound semiconductor of the superlattice, but the acceptor impurity may be added to both.
■ 超格子構造中のアクセプタ不純物準位は、外部から
の不純物元素添加によらず、Ｚｎ空孔が高濃度に存在す
るように結晶成長させることにより形成することもでき
る。これはＺｎ空孔が、超格子構造においてＧａＰ結晶
とＺｎＳ結晶の価電子帯の頂上の中間に位置するためで
ある。Ｚｎ空孔が高濃度に形成される結晶成長条件とし
ては、例えばＭＯＣＶＤ法を例にとれば、■族元素を供
給するガスの、■族元素を供給するガスに対するモル比
を充分大きく（例えば１０倍以上）設定すればよい。(2) The acceptor impurity level in the superlattice structure can also be formed by crystal growth so that Zn vacancies are present at a high concentration, without adding an impurity element from the outside. This is because the Zn vacancies are located between the tops of the valence bands of the GaP crystal and the ZnS crystal in the superlattice structure. For example, in the MOCVD method, the crystal growth conditions under which Zn vacancies are formed at a high concentration are such that the molar ratio of the gas supplying group Ⅰ elements to the gas supplying group Ⅰ elements is sufficiently large (for example, 10 (more than twice).
第１図は本発明の一実施例の発光素子構造を示す図、第
２図はそのｐ型環電層部の拡大図、第３図は同じくｐ型
環電層部のバンド構造を示す図、第４図は同じくｐ型環
電層部の導電率特性を示す図、第５図はこの発光素子の
発光のピーク位置と超格子構造中のＧａＰ層の厚みの関
係を示す図、第６図は他の実施例のｐ型環電層部の構造
を示す図、第７図は同じくそのｐ型環電層部のバンド構
造を示す図、第８図は〜第１０図は更に他の実施例の発
光素子構造を示す図である。
１・・・ｎ型ＧａＰ結晶基板、２・・・ｎ型Ｚｎ５ｚＳ
ｅｔ−ｚ層、２ｌ−ｎｌＺｎ８層、２２−Ｚｎ５ｅ層、
３・・・ｐ型理電層（超格子構造部）、４・・・ｎ側電
極（Ａｕ）、５−ｎ側電極（Ａｕ−Ｇｅ）、３１ｉ・Ｇ
ａＰ層、３２ｉ−Ａｇ添加ｚｎｓ層、３１ｉ ′・Ｚｎ
添加ＧａＰ層、３２ｉ−・・−ＺｎＳ層、８１・・・ｐ
型ＧａＰ基板、８２・・・ｐ型理電層（超格子構造部）
、８３・ｎ型Ｚｎ５ｚＳｅｔ＋ｚ層、８４ ・ｌ） ｆ
ｉｌ電極（Ａｕ−Ｚｎ）、８５・ｎ側電極（Ｉｎ”Ｇａ
） 、９１・ｎ型Ｚｎ５ｚＳｅｌ−２基板、９２・・・
ｐ型理電層（超格子構造部）、９３・・・ｎ側電極（Ａ
Ｌ＋）、９４・ｎ側電極（Ｉｎ−Ｇａ）。
出願人代理人 弁理士 鈴江武彦
第１図
第２図
第３図
ＺｎＳ ＧａＰ ＺｎＳ ＧａＰ ＺｎＳ第４図
ＯＴＯ２０３０４０
ＺｎＳ／ｌ ’３ Ｌｍ （″Ａ〕
第５図
ＧａＰ噌４Ｌｚ ［λ〕
第６図
ｆＪＡ７ 図
ｚｎｓ ＧａＰ ＺｎＳ ＧａＰ ＺｎＳ第８図
第１０図FIG. 1 is a diagram showing the structure of a light emitting device according to an embodiment of the present invention, FIG. 2 is an enlarged view of the p-type ring conductor layer, and FIG. 3 is a diagram showing the band structure of the p-type ring conductor layer. , FIG. 4 is a diagram showing the conductivity characteristics of the p-type ring conductive layer portion, FIG. 5 is a diagram showing the relationship between the peak position of light emission of this light emitting device and the thickness of the GaP layer in the superlattice structure, and FIG. The figure shows the structure of the p-type ring conductor layer of another embodiment, FIG. 7 shows the band structure of the p-type ring conductor layer, and FIGS. FIG. 2 is a diagram showing a light emitting device structure of an example. 1...n-type GaP crystal substrate, 2...n-type Zn5zS
et-z layer, 2l-nlZn8 layer, 22-Zn5e layer,
3...p-type physical layer (superlattice structure), 4...n-side electrode (Au), 5-n-side electrode (Au-Ge), 31iG
aP layer, 32i-Ag added zns layer, 31i'・Zn
Added GaP layer, 32i-...-ZnS layer, 81...p
type GaP substrate, 82... p-type physical layer (superlattice structure part)
, 83・n-type Zn5zSet+z layer, 84・l) f
il electrode (Au-Zn), 85/n side electrode (In”Ga
), 91 n-type Zn5zSel-2 substrate, 92...
p-type physical layer (superlattice structure), 93... n-side electrode (A
L+), 94/n-side electrode (In-Ga). Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 3 ZnS GaP ZnS GaP ZnS Figure 4 zns GaP ZnS GaP ZnSFigure 8Figure 10
Claims (3)
発光素子において、ｐ型導電層を、少なくとも一方にア
クセプタ不純物準位を持つIII−Ｖ族化合物半導体とII
−VI族化合物半導体とを交互に積層した超格子により構
成したことを特徴とする半導体発光素子。(1) In a semiconductor light emitting device in which a pn junction is constructed using a compound semiconductor, a p-type conductive layer is formed with a III-V compound semiconductor having an acceptor impurity level on at least one side and a II-V compound semiconductor having an acceptor impurity level on at least one side.
- A semiconductor light emitting device characterized in that it is constituted by a superlattice in which group VI compound semiconductors are alternately laminated.
＿ｘＰ（０≦ｘ≦１）であり、II−VI族化合物半導体は
アクセプタ不純物として I 族またはＶ族元素を添加し
たＺｎＳ＿ｙＳｅ＿１＿−＿ｙ（０≦ｙ≦１）であるこ
とを特徴とする特許請求の範囲第１項記載の半導体発光
素子。(2) III-V group compound semiconductor is Ga_xAl_1_-
_xP (0≦x≦1), and the II-VI group compound semiconductor is ZnS_ySe_1_-_y (0≦y≦1) doped with a group I or V element as an acceptor impurity. A semiconductor light emitting device according to scope 1.
てII族またはIV族元素を添加した Ｇａ＿ｘＡｌ＿１＿
−＿ｘＰ（０≦ｘ≦１）であり、II−VI族化合物半導体
はＺｎＳ＿ｙＳｅ＿１＿−＿ｙ（０≦ｙ≦１）であるこ
とを特徴とする特許請求の範囲第１項記載の半導体発光
素子。(3) Group III-V compound semiconductors include Group II or Group IV elements added as acceptor impurities.Ga_xAl_1_
-_xP (0≦x≦1), and the II-VI group compound semiconductor is ZnS_ySe_1_-_y (0≦y≦1), the semiconductor light emitting device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26577184A JPH077847B2 (en) | 1984-12-17 | 1984-12-17 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26577184A JPH077847B2 (en) | 1984-12-17 | 1984-12-17 | Semiconductor light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61144078A true JPS61144078A (en) | 1986-07-01 |
| JPH077847B2 JPH077847B2 (en) | 1995-01-30 |
Family
ID=17421801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26577184A Expired - Lifetime JPH077847B2 (en) | 1984-12-17 | 1984-12-17 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077847B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5416337A (en) * | 1992-02-13 | 1995-05-16 | International Business Machines Corporation | Hetero-superlattice PN junctions |
| JP2003506244A (en) * | 1999-07-30 | 2003-02-18 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Wiper blade for cleaning automotive window glass |
| WO2011008476A1 (en) * | 2009-06-30 | 2011-01-20 | 3M Innovative Properties Company | Cadmium-free re-emitting semiconductor construction |
| US8304976B2 (en) | 2009-06-30 | 2012-11-06 | 3M Innovative Properties Company | Electroluminescent devices with color adjustment based on current crowding |
| US8629611B2 (en) | 2009-06-30 | 2014-01-14 | 3M Innovative Properties Company | White light electroluminescent devices with adjustable color temperature |
| US8994071B2 (en) | 2009-05-05 | 2015-03-31 | 3M Innovative Properties Company | Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms |
| US9293622B2 (en) | 2009-05-05 | 2016-03-22 | 3M Innovative Properties Company | Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture |
| JP2016154244A (en) * | 2010-02-09 | 2016-08-25 | 晶元光電股▲ふん▼有限公司 | Photoelectric element and manufacturing method of the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53131779A (en) * | 1977-04-20 | 1978-11-16 | Ibm | Semiconductor superlattice structure |
| JPS6052067A (en) * | 1983-08-31 | 1985-03-23 | Nec Corp | Structure of super lattice |
-
1984
- 1984-12-17 JP JP26577184A patent/JPH077847B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53131779A (en) * | 1977-04-20 | 1978-11-16 | Ibm | Semiconductor superlattice structure |
| JPS6052067A (en) * | 1983-08-31 | 1985-03-23 | Nec Corp | Structure of super lattice |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5416337A (en) * | 1992-02-13 | 1995-05-16 | International Business Machines Corporation | Hetero-superlattice PN junctions |
| JP2003506244A (en) * | 1999-07-30 | 2003-02-18 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Wiper blade for cleaning automotive window glass |
| US8541803B2 (en) | 2009-05-05 | 2013-09-24 | 3M Innovative Properties Company | Cadmium-free re-emitting semiconductor construction |
| US8994071B2 (en) | 2009-05-05 | 2015-03-31 | 3M Innovative Properties Company | Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms |
| US9293622B2 (en) | 2009-05-05 | 2016-03-22 | 3M Innovative Properties Company | Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture |
| WO2011008476A1 (en) * | 2009-06-30 | 2011-01-20 | 3M Innovative Properties Company | Cadmium-free re-emitting semiconductor construction |
| CN102473817A (en) * | 2009-06-30 | 2012-05-23 | 3M创新有限公司 | Cadmium-free re-emitting semiconductor construction |
| US8304976B2 (en) | 2009-06-30 | 2012-11-06 | 3M Innovative Properties Company | Electroluminescent devices with color adjustment based on current crowding |
| US8629611B2 (en) | 2009-06-30 | 2014-01-14 | 3M Innovative Properties Company | White light electroluminescent devices with adjustable color temperature |
| JP2016154244A (en) * | 2010-02-09 | 2016-08-25 | 晶元光電股▲ふん▼有限公司 | Photoelectric element and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH077847B2 (en) | 1995-01-30 |
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