JPS61110474A - Semiconductor photocoupler - Google Patents
Semiconductor photocouplerInfo
- Publication number
- JPS61110474A JPS61110474A JP59231901A JP23190184A JPS61110474A JP S61110474 A JPS61110474 A JP S61110474A JP 59231901 A JP59231901 A JP 59231901A JP 23190184 A JP23190184 A JP 23190184A JP S61110474 A JPS61110474 A JP S61110474A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting element
- optical path
- light emitting
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 59
- 239000007787 solid Substances 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 230000008878 coupling Effects 0.000 claims description 24
- 238000010168 coupling process Methods 0.000 claims description 24
- 238000005859 coupling reaction Methods 0.000 claims description 24
- 239000003822 epoxy resin Substances 0.000 abstract description 12
- 229920000647 polyepoxide Polymers 0.000 abstract description 12
- 229920005989 resin Polymers 0.000 abstract description 9
- 239000011347 resin Substances 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 108091008695 photoreceptors Proteins 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 240000005109 Cryptomeria japonica Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical group [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
く帝業上の利用分野〉
本発明は半導体光結合装置に関し、とくにその内部構造
に関するものでろる。DETAILED DESCRIPTION OF THE INVENTION Field of Application The present invention relates to a semiconductor optical coupling device, and particularly relates to its internal structure.
〈従来技術とその問題点〉
半導体光結曾ｆｉｌｔｈ発光素子、および受光素子とを
単一のパッケージ内に組込−＋、を気的信号を光を媒体
として伝達するもので、入出力間が覗気的に絶縁されて
おり、信号が一方向にのみ伝達されるところから、近年
の各棟嘴報処ｆ！！Ａ憎器の急速な発達、ｐよび家庭電
化製品の高度化等に伴なって、様々な用途に用いら１て
さている。特に入出力間のイノターフエース、パルス、
トランス、ｊ）るいはリレーの代用として、また伝送１
！２１Ｍのノイズ除去対策等においては、工業的に既に
多量の半導体光結合ｆｉａｔが用いられている。<Prior art and its problems> Semiconductor photoconductive filth light-emitting element and light-receiving element are integrated into a single package, and a gas signal is transmitted using light as a medium, and the input and output are connected. Since it is voyeuristically insulated and the signal is transmitted only in one direction, in recent years each building's beak information station f! ! With the rapid development of A/P and the sophistication of home appliances, they are no longer being used for a variety of purposes. Innoturf ace, pulse, especially between input and output.
transformer, j) or as a substitute for a relay, and for transmission 1
! A large amount of semiconductor optical coupling FIAT has already been used industrially as a noise removal measure for 21M.
従来、半導体光結合装置の構造は第４図にその断面図を
示すように各々個別の発光素子側リード４５、受光素子
側リード４６にダイボッディングされた発光素子４１．
および受光素子４２を一定間隔に対向させ、これら発光
素子４１．および受光素子４２の間隙に透光性の７リコ
／樹脂４３を充填し、こルを通常用いられているエボキ
７樹脂４４等で射出したものである。光結合装置の入出
力間の耐圧をｌＩｊ］上させるためには、発光素子、受
光素子の間隔を充分に広くとることが有効であるが、通
常はＱ、５ｒｎｍ 程度であることが多い。その理由
は、通常使用されている透光性のシリコン樹脂が高温で
固化される際に粘度が小さくなるため、間隙が広くなる
とシリコン樹脂は元の形状が保てなくなり、中間部がく
びれたり、あるいは切れたりすることが多くなり、一般
に１〜２ ｍｍ以上にすることが困難であることによる
ものである。Conventionally, a semiconductor optical coupling device has a structure in which a light emitting element 41 .
and light-receiving elements 42 are arranged to face each other at regular intervals, and these light-emitting elements 41 . The gap between the light-receiving elements 42 is filled with translucent 7lico/resin 43, and this is injected with a commonly used epoxy 7 resin 44 or the like. In order to increase the breakdown voltage between the input and output of the optical coupling device by lIj], it is effective to make the distance between the light emitting element and the light receiving element sufficiently wide, but this is usually about Q, 5rnm. The reason for this is that the viscosity of commonly used translucent silicone resin decreases when it solidifies at high temperatures, so when the gap widens, the silicone resin cannot maintain its original shape, causing the middle part to become constricted. Otherwise, it often breaks, and it is generally difficult to make it more than 1 to 2 mm.
弗５図は、粥４図に示され九半導体光結合装置の欠点で
あるリードフレームの組み合わせを必要とせず、組立工
程を簡略化した半導体光結合装置の断面図を示すもので
ある。これは発光側リード５５、受光側リード５６に発
光素子５１．２よび受光素子５２をそれぞれ銀ペースト
でダイボンブイノブし、直径が２５〜３０μの金線によ
り１発光。Figure 5 shows a cross-sectional view of a semiconductor optical coupling device that does not require the combination of lead frames, which is a drawback of the semiconductor optical coupling device shown in Figure 4, and simplifies the assembly process. In this, a light emitting element 51.2 and a light receiving element 52 are bonded to a light emitting side lead 55 and a light receiving side lead 56 using silver paste, respectively, and a gold wire having a diameter of 25 to 30 .mu.m is used to emit one light.
受光双方の電極とり−ドフＶ−ムとをワイヤボンディン
グした後透光性のシリコン樹脂５３により発光側、受光
側双方のベレットヲコーティングしてこれ全接続して光
路とし、さらにエポキシ樹脂５４により封止したもので
るる。これは、前記の半導体光結合装置と異なす、リー
ドフレームが１枚ですむことから組立工程の作業は容易
になるものの、党略材料としては前記の半導体光結合装
置に用いたものと同等のシリコン樹脂を用いているため
、発光側、受光側の互いの間隙を広くしたい場合には透
光性のシリコン樹脂が筒部で固化される際に粘度が小さ
くなることによって中間部の樹脂が生れ下り、前記例と
同様に形状維持が困難となる。このため、発光、受光双
方の間隔ｖ’′１通常、１ｍｍμ上にすることかで＠な
い。After wire bonding the electrodes on both sides of the light receiving side and the dome V, the pellets on both the light emitting side and the light receiving side are coated with a transparent silicone resin 53, and these are all connected to form an optical path, and then sealed with an epoxy resin 54. The one that stopped appears. This is different from the semiconductor optical coupler described above because it requires only one lead frame, which simplifies the assembly process, but the material used is the same as that used in the semiconductor optical coupler. Since resin is used, if you want to widen the gap between the light-emitting side and the light-receiving side, the viscosity decreases when the translucent silicone resin solidifies in the cylindrical part, and the resin in the middle part is formed. , it becomes difficult to maintain the shape as in the previous example. For this reason, the interval v''1 between both the light emission and light reception is normally set to be 1 mmμ higher.
また、シリコン樹脂５３の形状は個々に異なる上止、エ
ポキシ樹８’ｍ５４のモールド後、シリコン樹脂５３と
エポキシ樹脂５４との界面が剥離し鴇く、電流伝達特性
のバラツキが大きい。第６図は第５図に示された光結合
装置の欠点である１発元素子。In addition, the shape of the silicone resin 53 is different from one another, and after molding the epoxy resin 8'm54, the interface between the silicone resin 53 and the epoxy resin 54 peels off, resulting in large variations in current transmission characteristics. FIG. 6 shows a one-shot element, which is a drawback of the optical coupling device shown in FIG.
受光素子の間隔を広くとれず、充分に高耐圧化しにくわ
という問題点を改良した光結曾装置の断面を示している
。（米国特許第４４５Ｑ４６１ ）第６図ＶＣｓｐいて
６１は発光素子、６２は受光素子、６４はガラス等で作
られたゆ状の光路材、６３は発光素子と党略材、および
受光素子と光路材のそれぞれの間の光学的なカッ１りン
グ階となる透明のシリコン樹脂、６５は光の反射材でめ
り、酸化チタンを混合した白色のシリコンゴム、６６は
通常用いられているエポキシ樹脂、めるいはシリコン樹
脂でろる。また６７は発光素子側リード、６８は受光素
子側のリードであり、前記エポキシ、６るいはシリコン
樹脂による封止によって固定されている。こｒｔは、前
述した２つの従来例とは異なり、棒状の光路材を有して
いるところから発光素子。This is a cross-sectional view of a photoconcentration device that has improved the problem of not being able to widen the spacing between the light-receiving elements and making it difficult to achieve a sufficiently high withstand voltage. (US Patent No. 445Q461) In Fig. 6 VCsp, 61 is a light-emitting element, 62 is a light-receiving element, 64 is a rectangular optical path material made of glass or the like, 63 is a light-emitting element and a material, and a light-receiving element and an optical path material. 65 is a transparent silicone resin that serves as an optical cutter between each layer, and 65 is a white silicone rubber mixed with titanium oxide, which is coated with a light reflecting material. 66 is a commonly used epoxy resin, and a metal The color is covered with silicone resin. Further, 67 is a lead on the light emitting element side, and 68 is a lead on the light receiving element side, which are fixed by sealing with the epoxy, 6 or silicone resin. Unlike the two conventional examples mentioned above, this light-emitting element has a rod-shaped optical path material.
受光素子との間隔を充分に広くとることができ。The distance between the light receiving element and the light receiving element can be sufficiently wide.
光結合装置の耐圧を向上させる上で大きな効果を果して
いるが、光路材の周囲に白色シリコ／ゴム等の反射材を
コーティングする必要かめることから１元結８％置の組
立工程は依然として従来例と基本的に同じく、コーティ
ングのための樹脂のボッティフグ設備等を必要とする。Although this method has a great effect on improving the pressure resistance of optical coupling devices, the assembly process of one element and 8% position is still the conventional method because it requires coating a reflective material such as white silicone/rubber around the optical path material. Basically, it also requires equipment such as resin bottifuge equipment for coating.
また、コーテイング材となる７リコ／ゴム等は、樹脂筺
の多少に工って形状が変り、わるいは外側のエポキシ等
の封止樹脂との界面の剥離が起り易く、電流伝達特性の
バラツキを生じ易い等の欠点は解消嘔れていない。In addition, the coating material, such as 7lico/rubber, changes its shape depending on the shape of the resin casing, or it tends to peel off at the interface with the sealing resin such as epoxy on the outside, resulting in variations in current transfer characteristics. The shortcomings, such as those that occur easily, have not been resolved.
く発明の目的〉
本発明の目的は上記の工つな欠点を改はし、実用化が容
易な高耐圧で、かつ（流伝達＠率が高く。OBJECT OF THE INVENTION The purpose of the present invention is to improve the above-mentioned difficult drawbacks, to provide a high pressure resistance that is easy to put into practical use, and a high flow transmission rate.
電気的特性のバラツキの少ない半導体光結合装置を提供
することにめる。The present invention aims to provide a semiconductor optical coupling device with less variation in electrical characteristics.
〈発明の構成〉
本発明に↓れは発光素子と受光素子とを対向させ、発光
素子、受光素子間に透光性の固体の光路材を狭持、また
は保持し、固体光路材により１発元素子と受光素子との
間隔が任意の一定間隔に狭持、または保持されることｔ
−特徴とする半導体光結合装置が得られる。<Structure of the Invention> In the present invention, a light-emitting element and a light-receiving element are opposed to each other, a light-transmitting solid optical path material is sandwiched or held between the light-emitting element and the light-receiving element, and one light beam is emitted by the solid optical path material. The distance between the element and the light receiving element is held or maintained at an arbitrary constant distance.
- A semiconductor optical coupling device with characteristics can be obtained.
また、本発明によれば前述したと同様な半導体光結合装
買において、受光素子と相対向している発光素子から発
光された光の波長に対して、Ｌ！１反＠率を有するコー
テイング材でコーティングもれた１１体の党略材が発光
素子、受光素子間に任意の一定間隔で狭持、または保持
されることを勾りにとした半導体光結合装置をも得られ
る。Further, according to the present invention, in a semiconductor optical coupling device similar to that described above, L! This is a semiconductor optical coupling device in which 11 parts coated with a coating material having an anti@ ratio of 1 are sandwiched or held at arbitrary fixed intervals between a light emitting element and a light receiving element. You can also get
く本発明の作用〉
本発明によれば、発光素子、受光素子間にＦＩ−ｔの一
定長にそろえられた固体の光路材を狭持、またげ保持す
ることにより、−形影状の光路材を用いているたりに、
電流伝達特性のバラツキが少すく、発光素子、受光素子
間隔が広くと１高納圧の半導体光結合装置が得られる。Effects of the Present Invention> According to the present invention, by sandwiching and holding a solid optical path material aligned to a constant length of FI-t between a light emitting element and a light receiving element, a -shaped optical path material can be formed. When using
If the variation in current transfer characteristics is small and the spacing between the light emitting element and the light receiving element is wide, a semiconductor optical coupling device with a high internal voltage can be obtained.
さらに本発明によれば、受光素子と相対向した発光素子
から発光される光の波長に対して高反射率を有するコー
テイング材でコーティングされた固体の光路材が１発光
素子、受光素子間に狭持、または保持されることに工す
１発光素子から発光された光は、光路材の中に入射し、
光路材壁面で有効に反射し、外側のエポキシ樹脂、また
は光路材との界面で吸収されることが少なく、受光素子
の受光面上に効率ｔく到達することが可能となる。Furthermore, according to the present invention, a solid optical path material coated with a coating material having a high reflectance for the wavelength of light emitted from the light emitting element facing opposite to the light receiving element is provided between one light emitting element and the light receiving element. Light emitted from one light emitting element that is designed to be held or held enters the optical path material,
It is effectively reflected on the wall surface of the optical path material, is less likely to be absorbed by the outer epoxy resin or at the interface with the optical path material, and can efficiently reach the light receiving surface of the light receiving element.
と記のように、本発明によれば、電流伝達特性等の電気
特性のバラツキが小さく、耐圧も充分高く、光路材ｔ−
２おう反射材等のポツティングも不要で組立も各ｌＩＪ
な半導体光結合装置が侍らする。As described above, according to the present invention, variations in electrical characteristics such as current transfer characteristics are small, the withstand voltage is sufficiently high, and the optical path material t-
2. No need to pot reflective materials etc. and assembly is easy.
A semiconductor optical coupling device will be provided.
く実施例〉
以下に本発明の詳細を、実施例にもとづき、弔ｌ−〜＄
３図に従って説明する。Examples> The details of the present invention will be described below based on examples.
This will be explained according to Figure 3.
（ｌ！施絶倒、） 第１図は本発明の実施例１の断面図金示すものでめる。(l! Shizentai,) FIG. 1 is a cross-sectional view of Embodiment 1 of the present invention.
１１は発光素子でわり１本実施例１では（ＪａＡｓ赤外
発光素子を用いている。１２は受光素子であり、本実施
例１においては８ｉのホトトランジスタを用いた。大き
さはそ１ぞれ０．４Ｘ０．４ＸＯ，２ｍｍ、 ０．８
Ｘ０．８Ｘ０．２ｍｍ である。１３に銀ペーストで発
光素子、および受光素子をそれぞれ発光素子側リード１
８．受光素子側リード１９１Ｃダイボンディングしてい
る。１４は直径２５μの金線であり１発光素子のｔ極と
発光素子側リード１８の別の端子とを接続し、また受光
素子の１極と受光素子側リード１９の別の端子とを接続
している。Reference numeral 11 is a light emitting element, and in Example 1, a JaAs infrared light emitting element is used. Reference numeral 12 is a light receiving element, and in Example 1, an 8i phototransistor is used. 0.4X0.4XO, 2mm, 0.8
It is X0.8X0.2mm. 13, connect the light emitting element and the light receiving element with silver paste to the light emitting element side lead 1.
8. The light receiving element side lead 191C is die bonded. Reference numeral 14 denotes a gold wire with a diameter of 25μ, which connects the t-pole of one light-emitting element and another terminal of the light-emitting element side lead 18, and also connects one pole of the light-receiving element and another terminal of the light-receiving element-side lead 19. ing.
１６は光路材でろり１本実施例ＩＫ＆いては、通常よく
用いられているホウケイ酸ガラスを用い化。16 is an optical path material, and 1 example IK & 1 uses borosilicate glass, which is commonly used.
これは可視またに近赤外領域の光に対し、透明でめり、
本実施例においてその形状は、第３図（ａ）に示す工う
に、光の透過部分の断面３２の大きさが０．４Ｘ０．４
ｍｍ でらり、長さが、１ｍｍ の円柱状の党略材３
１ｔ−用いている。また光路材の側面３３ｒｊ：金属酸
化物ｆｔ混合した白色ガラスのコーティング部分でめり
、光路材３１と一体になっており可視、または近赤外域
の光に対して反射率が大きくなっている。１５は透光性
のシリコン樹脂でろり、光路材１６を発光素子１１．受
光素子１２によって狭持する際に発光素子側受光素子側
双方にコーティングして２＠、光路材１６を介してｖｃ
ｙ＃させるとともに、発光素子から放射さまた波長９４
０口ｍの光を効率的に光路材中に導き、文光素子の受光
面に光路材中エリ有効に光を到達させるものでろる。１
７は通常工〈用いられているエポキシ樹脂であり、リー
ド１８．１９に一定間隔に固定し、党略材９発光素子、
受光素子等を被漬するものである。It is transparent to visible and near-infrared light, and
In this embodiment, the shape of the cross section 32 of the light transmitting portion is 0.4×0.4 as shown in FIG.
mm cylindrical material 3 with a length of 1 mm
1t - used. Further, the side surface 33rj of the optical path material is coated with white glass mixed with metal oxide ft, and is integrated with the optical path material 31, and has a high reflectance for light in the visible or near infrared region. 15 is coated with a transparent silicone resin, and the light path material 16 is connected to the light emitting element 11. When sandwiched between the light receiving elements 12, coat both the light emitting element side and the light receiving element side, and apply vc through the optical path material 16.
y# and the wavelength 94 emitted from the light emitting element.
It is possible to efficiently guide the light of 0 mm into the optical path material and to make the light effectively reach the light receiving surface of the writing element in the optical path material. 1
7 is a commonly used epoxy resin, which is fixed to the leads 18 and 19 at regular intervals, and the material 9 is a light emitting element;
It immerses the light receiving element etc.
本実施例１における光結合装置は以下のように作製され
ろ。発光素子ぺＶブト１１金銀ベースト１３にＬす１発
光素子側リードフレーム１８にダイボンディングし、受
光素子側も同様にダイボンディングして、その後それぞ
れのリードフレームを２００℃で熱処理、し銀ペースト
を固化させる。固化を完了したら属僚２５μの金＄１１
４にエリワイヤボンディングを行う。次に受光素子１２
の受光面にとりコン樹脂１５を少量性ｆさせｆｃ後、光
路材１６を固定する。その後、発光素子１１０発光面に
も同一のシリコン刹脂１５を少覆付４させた後、これを
受光側リードフレームと組合わせ１発光部、受光部とを
対向させ、さらにトランスファーモールド法によりエポ
キシ、ｌＨ詣１７にエリ耐重した後、発党側、受光側リ
ードフレームのタイバー切断、ハンダメッキ等の工程を
経て、′＠光素子側リード１８．受光素子側リード１９
と・と杉）茂し、完成されるものｒ６る。The optical coupling device in Example 1 is manufactured as follows. The light-emitting element panel 11 is die-bonded to the gold-silver base 13, L1 is die-bonded to the light-emitting element side lead frame 18, and the light-receiving element side is also die-bonded in the same way.Then, each lead frame is heat-treated at 200°C, and a silver paste is applied. Let solidify. Once solidification is complete, the employee will receive 25μ of gold for $11.
4. Perform area wire bonding. Next, the light receiving element 12
After applying a small amount of resin 15 to the light receiving surface of the light receiving surface, the optical path material 16 is fixed. After that, the light emitting surface of the light emitting element 110 is covered with a small amount of silicone resin 15, and then this is combined with the light receiving side lead frame, the light emitting part and the light receiving part are made to face each other, and then epoxy resin is applied by transfer molding. , 17. After being subjected to heavy loads, the lead frames on the transmitting side and the receiving side undergo tie bar cutting, solder plating, etc., and then the optical element side leads 18. Light receiving element side lead 19
To... and Sugi) Shigeru, the one that will be completed r6ru.
（実施例２）
第２図は本発明の実施ｒｌ ２の断面図を示すものであ
る。２１は発光素子であり、本実施例２においてはＧａ
Ａｓ赤外発光素子を用いｅ、２２ｒ；［受光素子であり
、本実施例２においてはＳｉのホトトランジスタを用い
た。大きさは各々０．４ Ｘ ０．４ Ｘ Ｏ，２ｍｍ
、０．８Ｘ０．８Ｘ０．２ｍｍでめる。２３は銀ペース
トでめり、発光素子、受光素子を七〇それ、同一のリー
ドフレーム上べ形成されている発光素子側リード２８．
受光素子側リード２９にグイボンディングしている。２
４は直径が２５μの金線でろり。(Example 2) FIG. 2 shows a cross-sectional view of implementation rl 2 of the present invention. 21 is a light emitting element, and in this Example 2, Ga
An As infrared light-emitting element was used e, 22r; [a light-receiving element, and in Example 2, a Si phototransistor was used. Size: 0.4 x 0.4 x O, 2mm each
, 0.8X0.8X0.2mm. 23 is a light emitting element side lead 28 which is molded with silver paste, and a light emitting element and a light receiving element are formed on the same lead frame.
It is bonded to the lead 29 on the light receiving element side. 2
4 is filled with gold wire with a diameter of 25μ.
補光素子の電極と発光素子側リード２８の端子とを艦続
し、また受光素子の電極と受光素子側り−ド２９の端子
とｔ−１ｆ続する。２６はホウケイ酸ガラス製の光路材
でめり、可視または近赤外領域の光に対し透明である。The electrode of the light auxiliary element is connected to the terminal of the light emitting element side lead 28, and the electrode of the light receiving element is connected to the terminal of the light receiving element side lead 29 at t-1f. Reference numeral 26 is an optical path material made of borosilicate glass, which is transparent to visible or near-infrared light.
その形状は！３図（ｂ）の３４に示すように板状でめり
、長さ３ｍｍ、光の透過部分の断面３６は０．４Ｘ０．
２ｍｍ２である。また発光素子、および受光素子と接着
面３５については。What is its shape? As shown at 34 in FIG. 3(b), it is plate-shaped and has a length of 3 mm, and the cross section 36 of the light transmitting part is 0.4 x 0.
It is 2mm2. Regarding the light emitting element, the light receiving element and the adhesive surface 35.
弔３図に示すとおり、側山部とは異なって、白色ガラス
のコーティング部３３は当然除去されている。２５は透
光性のシリコン樹脂でメリ、発光素子２１０発光面、お
よび受光素子２２の受光面に少量付着させ、光路材２６
の両端を一着させ１発光素子から放！ｉされる９４０ｎ
ｍの波長の光を光路材中に導き、受光素子の受光面に光
路材中より有効に光を到達させることができる。２７は
、一般によく用いられている通常のエポキシ樹脂でらり
。As shown in Figure 3, unlike the side peaks, the white glass coating 33 has naturally been removed. Reference numeral 25 is a light-transmitting silicone resin, and a small amount is attached to the light-emitting surface of the light-emitting element 210 and the light-receiving surface of the light-receiving element 22.
Put both ends together and release from one light emitting element! 940n to be i
It is possible to guide light with a wavelength of m into the optical path material, and to make the light effectively reach the light receiving surface of the light receiving element from within the optical path material. 27 is a common epoxy resin that is commonly used.
リード２８，２９ ｆニ一定の間隔に固定し、光路材。Leads 28 and 29 f are fixed at a constant interval and serve as optical path material.
発光素子、受光素子等を被覆し、固定するものである。It covers and fixes light-emitting elements, light-receiving elements, etc.
本実施例２に２ける光結合装置の作＃は、リードフレー
ムが発光側、受光側とも、同−千口上に配利されたリー
ドフレームを用いていることと。The optical coupling device according to the second embodiment uses a lead frame arranged on the same side on both the light emitting side and the light receiving side.
光路材部分の形状が実施例１とは異なるため、グイボン
ディング、ワイヤポンディングが１回で済み、党略材の
接着が容易になる等の利点がある池は、基本的な作製工
程については実施例１と同様でろる。Since the shape of the optical path material part is different from Example 1, only one wire bonding and wire bonding is required, and the basic manufacturing process has the advantage of making it easier to bond the structural materials. It's similar to example 1.
〈発明の＠果〉
以上、図面に工つて詳細に説明した工うに、本発明によ
れば発光素子、受光素子間に圧叡の一定長の固体の光路
材を狭持、まｆｃは保持させることにより、耐圧の高い
半導体元結せ装置を容易ＶＣ得ることができる。また光
路材が固体であるために。<Results of the Invention> As described above in detail with reference to the drawings, according to the present invention, a solid optical path material having a fixed length of pressure is held between the light emitting element and the light receiving element. As a result, a semiconductor bonding device with high breakdown voltage can be easily obtained. Also, because the optical path material is solid.
光路の形状も一定でめり、耐圧のバラツキ、お工びＣ流
伝達特性のバラツ中も小さい上、従来例のエラに光路材
をおおう反射材のボンディング等が不要で組立が容易な
高品質の光結合装置が得られる。さらに本発明にぶる光
路材は外側面に効率の良い反射面を有しているため、従
来のように光路材シリコン樹脂と外側のエポキシ樹脂と
の界面での吸収がなく、効率よく受光面に光が到達し、
を流伝達効率の大さい光結合装置が容易に得られる。The shape of the optical path is constant and there are small variations in pressure resistance and C flow transmission characteristics, and there is no need to bond reflective material to cover the optical path material in the conventional example, making it a high quality product that is easy to assemble. An optical coupling device is obtained. Furthermore, since the optical path material according to the present invention has a highly efficient reflective surface on the outer surface, there is no absorption at the interface between the optical path material silicone resin and the outer epoxy resin, and the light receiving surface is efficiently reflected. the light reaches
An optical coupling device with high flow transmission efficiency can be easily obtained.
また本発明の実施例においては、素材として、ＧａＡｓ
赤外発光素子、および８ｉホトトランジスタを用いたが
、これらの材料に限らず、池のＧａＡｓｈ、ＩｎＧａＡ
ｓ 等の化合吻半導体に広く変形路用させ得ることは
言う迄もない。Further, in the embodiments of the present invention, GaAs is used as the material.
Although an infrared light emitting element and an 8i phototransistor were used, materials such as Ike's GaAsh, InGaA, etc.
It goes without saying that compound semiconductors such as S2 can be used in a wide variety of deformation paths.
さらに、本発明の実施例においては光路材としてホウケ
イ酸ガラスを用いたが、外側のエポキシ鋼脂と同様なプ
ラスチック材料？用いることも可能である。また側面に
反射面を有しない党略材を用いて、外側のエポキシ樹脂
を白色に着色したものを用いても本発明と同等な結果が
得られ、これも本発明に属するところでめる。また１本
爽施例においては１チヤンネル型の光結合装置について
説明したが、あらゆる複数の組合わせの多チヤンネル型
の光結合ｈａについても適用可能であることはぎう迄も
ない。Furthermore, in the embodiment of the present invention, borosilicate glass was used as the optical path material, but could it be made of a plastic material similar to the outer epoxy steel? It is also possible to use Furthermore, the same results as the present invention can be obtained by using a material having no reflective surface on the side surface and the outer epoxy resin being colored white, and this is also included in the present invention. Furthermore, although a one-channel type optical coupling device has been described in this embodiment, it goes without saying that the present invention can also be applied to any combination of multi-channel type optical coupling devices.
第１図、弔２図は本発明の半導体光結合装置の断面図、
＃４３図（ａ）、（ｂ）は本発明の半辱体光結合装置に
用いた党略材例Ｃ料視図、弔４図、躬５図。
！ｓ６図は従来例の断面図である。
１１、２１．４１．５１．６１・・・・・発光素子、１
２，２２゜４２、５２．６２・・・・・・受光素子、
１３．２３・・・・・・銀ベースト、１も２４・・・
・・・金線、１５．２５．４３．５３．６３・・・・・
・シリコン！（脂、 １６．２６．３＋、 ３４．６４
・・・・・・光路材、 １７．２７．４４．５４．６
Ｇ・・・・・・エポキシ樹脂。
１８．２８，４５．５５＋ ６７・・・・・・発光側
リード、１９゜２９、４６．５６．６８・・・・・・受
光側リード、 ３２・・・・・・断面、３３・・・・・
コーティング部、３５・旧・・Ｐ２着面、６５・・・・
・・白色シリコンゴム。
「（埋入 弁理士 内 原 皆 ” Ｈ−Ｌ：＋
、。
１゜
豪（回 ′ｙ“ＪＩＰｊ ＩＩ−ｔ−￥−２０
渣３籾1 and 2 are cross-sectional views of the semiconductor optical coupling device of the present invention,
#43 Figures (a) and (b) are a perspective view of an example C of an abbreviated material used in the semicircular body optical coupling device of the present invention, Figures 4 and 5. ! Figure s6 is a sectional view of the conventional example. 11, 21.41.51.61...Light emitting element, 1
2, 22° 42, 52.62... Light receiving element,
13.23...Silver base, 1 is also 24...
...Gold wire, 15.25.43.53.63...
·silicon! (fat, 16.26.3+, 34.64
・・・・・・Optical path material, 17.27.44.54.6
G... Epoxy resin. 18.28, 45.55+ 67... Light emitting side lead, 19°29, 46.56.68... Light receiving side lead, 32... Cross section, 33...・・・
Coating part, 35, old...P2 surface, 65...
・White silicone rubber. "(Embedded Patent Attorney Minami Uchihara" H-L:+
,. 1゜Au (time ′y“JIPj II-t-￥-20 residue 3 paddy
Claims (1)
光素子間に透光性の固体の光路材を有し、該固体光路材
を狭持、または保持している半導体光結合装置において
、前記固体光路材が、前記受光素子と相対向した前記発
光素子から放射された光の波長に対して高反射率を有す
るコーティング材料でコーティングされていることを特
徴とする半導体光結合装置。A semiconductor optical coupling device in which a light-emitting element and a light-receiving element are opposed to each other, a light-transmitting solid optical path material is provided between the light-emitting element and the light-receiving element, and the solid-state optical path material is sandwiched or held, A semiconductor optical coupling device characterized in that the solid optical path material is coated with a coating material having a high reflectance for the wavelength of light emitted from the light emitting element facing the light receiving element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59231901A JPS61110474A (en) | 1984-11-02 | 1984-11-02 | Semiconductor photocoupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59231901A JPS61110474A (en) | 1984-11-02 | 1984-11-02 | Semiconductor photocoupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61110474A true JPS61110474A (en) | 1986-05-28 |
Family
ID=16930816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59231901A Pending JPS61110474A (en) | 1984-11-02 | 1984-11-02 | Semiconductor photocoupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61110474A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008296761A (en) * | 2007-05-31 | 2008-12-11 | Nirasawa Seihan Kk | Sled |
| JP2010161202A (en) * | 2009-01-08 | 2010-07-22 | Renesas Electronics Corp | Optically coupled device and method of manufacturing the same |
-
1984
- 1984-11-02 JP JP59231901A patent/JPS61110474A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008296761A (en) * | 2007-05-31 | 2008-12-11 | Nirasawa Seihan Kk | Sled |
| JP2010161202A (en) * | 2009-01-08 | 2010-07-22 | Renesas Electronics Corp | Optically coupled device and method of manufacturing the same |
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