JPS6098628A - Conveyor in vacuum - Google Patents

Conveyor in vacuum

Info

Publication number
JPS6098628A
JPS6098628A JP20613183A JP20613183A JPS6098628A JP S6098628 A JPS6098628 A JP S6098628A JP 20613183 A JP20613183 A JP 20613183A JP 20613183 A JP20613183 A JP 20613183A JP S6098628 A JPS6098628 A JP S6098628A
Authority
JP
Japan
Prior art keywords
arm
vacuum
transfer
wafer
arms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20613183A
Other languages
Japanese (ja)
Inventor
Toshimichi Ishida
敏道 石田
Hirozo Shima
島 博三
Masaki Suzuki
正樹 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP20613183A priority Critical patent/JPS6098628A/en
Publication of JPS6098628A publication Critical patent/JPS6098628A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manipulator (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To simplify the structure of a device, to shorten carrying time and to improve productivity by mounting two pairs of carrying arms shifting a material to be carried and a turning arm with a revolution support section for turning each carrying arm. CONSTITUTION:A conveyor has two pairs of carrying arms 25a, 25b shifting a wafer 19 as a material to be treated into one vacuum carrying chamber 21 and turning arms 30a, 30b with a revolution support section for turning the arms 25a, 25b. The arms 30a, 30b are each fixed to shafts 31a, 31b. The arms 25a, 25b are turned in the direction opposite to the direction of rotation of the arms 30a, 30b by a reverse rotation driving section by the combination of a fixed gear 36, an intermediate gear 35a and a turning gear 34a. Accordingly, the structure of the device is simplified because the chambers 21 can be reduced to one and vacuum constitutional parts can also be decreased largely.

Description

【発明の詳細な説明】 産業−I−の利用り〕野 本発明は、例えげシリコンウエハ」、に形成された被膜
のパターン加工を行なうだめのゾラズマ放電ケ利用した
ドライエツチングなどで、処理物すなわち、シリコンウ
ェハ葡人気中から常に真空保j、jさハ/ζ反応室内へ
供給、塩9出しを行なうための真空中における搬送装置
に関するものである、従来例の構成とその問題点 従来の真空中における搬送装置は、第1図にその具体的
構成金示すように、人気中で供給さノするシリコンウエ
ハ(以下ウェハと呼ぶ)1を、常に真空に保たれた反応
室2内に搬入するため、第1真空搬送室3を大気圧に戻
し、第1真空搬送室3に設けられた第1ゲーI・パルプ
4を開き、図示しない搬送ベルI−によりウェハ1全移
絨ビ/6J−まで搬び、移載ピン6により搬入アーム6
の先端に設けたウェハ受け6a上に乗ぜ、第1ゲー ト
バルブ4を閉じて真空排気ロアより真空引き全行ない、
次に第2ゲートバルグ8を開き、搬入アーム全スライド
軸9にそって図示しないワイヤ駆動などにより反応室2
内のウェハを・1戊16.する基板電極10上に移祇ヒ
ン11により移しかえ、搬入アーム6をもとの位置に戻
し、第2ゲーl−バルブ8を閉じる。その後ウェハ1は
反応室内でプラズマ放電を利用してドライエツチングす
る。処理の終rしたウェハ1は第24′1、空搬送室1
3を真空引きし、第3ゲートパルプ14を開き、搬出ア
ーム15を前進させ、ウェハ受け1152L上にウェハ
1全移しがえ、搬出アーム16を後退させ、移載ビン1
6により図示しない搬送ベルト上に味ぜ、第3ゲートバ
ルブ14金閉じ、第2真空搬送室13を人気圧にもどす
、その後第4ゲーl−パルプ17を開き、ウェハ1を収
納位@18に搬送ベルトで送り出し、第4ゲートバルブ
17を閉じる。以後同じ動作を繰り返す。しかしながら
上記のような構成では、真空搬送室が2組必要になり、
装置構造がり雑になるばかりでなく、ウェハ移載に費や
す時間が多く、生産性が悪いなどの欠点を有していた、
発明の目的 本発明は上記欠点に鑑み、装置構造k I7v□I素化
し、搬送時間全短縮した生産性の高い真空中における搬
送装置!全提供するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industry-I- Application] The present invention provides dry etching using a Zolazma discharge for patterning a film formed on, for example, a silicon wafer. , Concerning a transfer device in a vacuum for constantly supplying silicon wafers to a reaction chamber and removing salt from a vacuum-maintained state, the structure of a conventional example and its problems Conventional vacuum As shown in FIG. 1, the transport device therein transports a commonly supplied silicon wafer (hereinafter referred to as a wafer) 1 into a reaction chamber 2 which is always kept in a vacuum. Therefore, the first vacuum transfer chamber 3 is returned to atmospheric pressure, the first gate I pulp 4 provided in the first vacuum transfer chamber 3 is opened, and the entire wafer 1 is transferred by a transfer bell I- (not shown). the loading arm 6 using the transfer pin 6.
Place the wafer on the wafer holder 6a provided at the tip of the wafer, close the first gate valve 4, and fully evacuate from the vacuum exhaust lower.
Next, the second gate valve 8 is opened, and the reaction chamber 2 is moved along the entire slide shaft 9 of the carrying arm by a wire drive (not shown) or the like.
1 wafer inside 16. The transfer arm 6 is returned to its original position, and the second gate valve 8 is closed. Thereafter, the wafer 1 is dry etched in a reaction chamber using plasma discharge. The wafer 1 that has been processed is transferred to the empty transfer chamber 1 in the 24'1
3 is evacuated, the third gate pulp 14 is opened, the unloading arm 15 is advanced, the entire wafer 1 is transferred onto the wafer receiver 1152L, the unloading arm 16 is retreated, and the unloading bin 1 is
6, the wafer 1 is placed on a conveyor belt (not shown), the third gate valve 14 is closed, the second vacuum conveyance chamber 13 is returned to the atmospheric pressure, the fourth gate 1-pulp 17 is opened, and the wafer 1 is placed in the storage position @18. It is sent out using a conveyor belt, and the fourth gate valve 17 is closed. Repeat the same action thereafter. However, with the above configuration, two sets of vacuum transfer chambers are required.
Not only was the equipment structure complicated, but it also had disadvantages such as a lot of time spent transferring wafers and poor productivity.
OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, the present invention provides a high-productivity conveying device in vacuum that has a device structure of k I7v□I and completely shortens the conveying time! All that is offered.

発明の構成 本発明の搬送装@は、1個の真空搬送室内に、搬jス物
I−移・賎する2組の搬送アームと、それぞれの搬送ア
ームを旋回するだめの回転支持部をもつ旋[11アーム
と、前記旋回アームに固定され、各4が独立して回転駆
動されかつ、同心に配置した2本の回転軸と、旋回アー
ムの回転方向とは逆向きに搬送アームを旋回さぜる反転
駆動1113と真空搬送室の側壁に搬送路の開閉のため
に設けたゲーI・バルブとから構成されており、真空搬
送室が1個ですみ、ゲートパルプの数も削減でき、真空
構成部品も削減できるなど、’w l厚構造の簡素化が
はかれ、真空搬送室1個を真空排気するだけでよく、真
空排気時間が半減でき、産道時間が短縮されるという特
有の効果を有する。
Composition of the Invention The conveying device of the present invention has two sets of conveying arms for transferring and plowing objects I--in one vacuum conveying chamber, and a rotation support part for rotating each of the conveying arms. A rotating arm 11, two rotating shafts fixed to the rotating arm, each of which is driven to rotate independently, and arranged concentrically, and a transfer arm that rotates in the opposite direction to the rotating direction of the rotating arm. It consists of a reverse drive 1113 and a gate I valve installed on the side wall of the vacuum transfer chamber to open and close the transfer path, so only one vacuum transfer chamber is required, and the number of gate pulps can be reduced. The structure has been simplified by reducing the number of components, and only one vacuum transfer chamber needs to be evacuated, which has the unique effect of halving the evacuation time and shortening the birth canal time. have

実施例の説明 以下本発明の一実施例について、図面i 参1jr4 
j。
DESCRIPTION OF THE EMBODIMENTS An embodiment of the present invention will be described below with reference to drawing i.
j.

なから説明する。第2図は本発明の一実施例におけるド
ライエツチング装置を使月1した真空中における搬送装
置の構成全示すものである。第2図において、19は人
気中で1枚毎に供給される処理物であるウェハで、順次
この位1バにウェハは外部より供給、取り出しが行なわ
れる。2C)idウェハ19を搬送アーム」−に移載す
る移載ビン、21 ii真空搬送室で図示しない真空ポ
ンプに接続された真空排気口22により内部を真空排気
できる。
Let me explain from the start. FIG. 2 shows the entire configuration of a conveying device in a vacuum in which a dry etching device according to an embodiment of the present invention has been used for a month. In FIG. 2, reference numeral 19 indicates a wafer, which is a popular item and is supplied one by one, and wafers are sequentially supplied and taken out from the outside to this 1 bar. 2C) Transfer bin for transferring the id wafer 19 to the transfer arm 21 ii The interior of the vacuum transfer chamber can be evacuated by a vacuum exhaust port 22 connected to a vacuum pump (not shown).

23は真空搬送室21の側壁に設けた搬送路の開閉を行
なう第1ゲー1−バルブであり、閉じたときはQ 17
ングにより真空月じができる。24は第1ゲートパルプ
23と同様に反応室と真空搬送室との間で開閉する第2
ゲートバルブ、252Lは先端にウェハが入り込む窪み
全設けたウェハ受は部に処理前のウェハを載置し搬入す
る搬送アームの一方である搬入アーム、26bは処[’
後のウェハ全11:に置し搬出する搬送アームの1屯の
一方である搬出アーム、26は例えばウェハ上の被膜の
ドライエツチングをイアなうため、常に真空に作たれた
反応室で、中火に一対の平行平板電極が設けられている
。27は反応室26を図示しない真空ポンプにより真空
排気する真空排気口、28は反応室26内にあってウェ
ハ全載置し、前記対向電極の一方である)1(板電極、
29はウェハ全移液する移載ビンであるっ第3図は真空
搬送室内の移載部の構成を示すもので、21は真空搬送
室、25&は搬入アーム、30aは旋回アームて回転軸
312Lに固定されている。31bは回転軸31fLの
中・U全員通し同心に構成した回転軸で、旋回アーム3
0bが固定しである。25bは搬出アームである。
Reference numeral 23 denotes a first gate valve for opening and closing the transfer path provided on the side wall of the vacuum transfer chamber 21, and when it is closed, Q 17
A vacuum moon is created by Similarly to the first gate pulp 23, a second gate 24 opens and closes between the reaction chamber and the vacuum transfer chamber.
The gate valve 252L has a wafer receiver with a recess into which the wafer enters at its tip, and 26b is a loading arm that is one of the transfer arms for loading and loading unprocessed wafers.
The carry-out arm 26, which is one of the transfer arms that places and carries out all the wafers 11, is a reaction chamber that is always kept in a vacuum to prevent dry etching of the film on the wafer, for example. The fire is equipped with a pair of parallel plate electrodes. 27 is a vacuum exhaust port for evacuating the reaction chamber 26 by a vacuum pump (not shown); 28 is located inside the reaction chamber 26, on which the entire wafer is placed, and is one of the counter electrodes 1 (plate electrode)
29 is a transfer bin for transferring all the wafers. Figure 3 shows the structure of the transfer section inside the vacuum transfer chamber, where 21 is the vacuum transfer chamber, 25& is a carry-in arm, and 30a is a rotating arm with a rotating shaft 312L. is fixed. 31b is a rotating shaft constructed concentrically through the entire center and U of the rotating shaft 31fL;
0b is fixed. 25b is a carry-out arm.

32は軸受けで回転軸312L 、 31 bが(フリ
ツク等の真空プールgl(品で回転自在に組み込せれて
いる(図示せず)、また軸受け32も真空搬送室21と
の間に0リング等の真空/−ルが施さJlているっ(図
示せず)、3Saは搬入アーム25&に固定され旋回ア
ーム30aに回転支持された軸であり、 □旋回歯車3
4aが固定されている。、35aは旋回アーム30a十
で旋回両手34aとかみ合い回転自在に取りつけられた
中間歯+4(で、固定歯車36とかみ合っている。37
は固定両市36の支持体である、382Lは回転1m+
 31 aに固定された回転歯巾で、モーター40aに
固定された駆動歯<i(3gaにより、旋回アーム30
aの旋回のだめの回転が伝えられる一30b〜40bの
番号k (’J’ したものは、30a〜40aと同じ
機能をもっている。
Reference numeral 32 denotes a bearing, and the rotating shafts 312L and 31b are rotatably incorporated in a vacuum pool (not shown) such as a flick (not shown). 3Sa is a shaft fixed to the carry-in arm 25& and rotatably supported by the swing arm 30a, □Swivel gear 3
4a is fixed. , 35a are rotatably attached intermediate teeth +4 (which engage with the rotating arms 34a and are rotatably attached to the rotating arm 30a) and are engaged with the fixed gear 36. 37
382L is the support body of the fixed two city 36, 382L is the rotation 1m +
With the rotating tooth width fixed to 31a, the driving tooth <i fixed to the motor 40a (3ga allows the rotation arm 30
Numbers k ('J') of 1 30b to 40b, to which the rotation of the turning stop of a is transmitted, have the same function as 30a to 40a.

以」二のように構成され、ドライエツチング装置に使用
した真空中における搬送装置について、以下その動作を
説明するつまず処理前のウェハ19が移I賎ビン20上
に供給され、移1賎ビンによりウェハ19を持ち上げる
。つぎに真空搬送室21を窒素ガスの導入により大気圧
に戻し、第1ゲートバルブ23全開き、モータ40aの
回転により旋回アーム3Qaが第1ゲー1゛パルプ23
イ111]に旋回するとともに、搬送アーム25fLは
、固定歯i’1436、中間歯車351L、旋回歯車3
4aの組み合わせによる反転駆動部により移載ビン20
の輔む上まで移動するっその後移載ピン2oはF降しウ
ェハ19は搬送アームの先端に設けたウェハ受け¥’i
lI //)に載置される。次にモーフ401:1逆回
1匹し同様に搬入アーム262Lが真空搬送室21内に
戻り、第1ゲー1−バルブ23を閉じ、真空排気口22
より例えば設定真空度の○1Torriで4ノ1気する
The operation of the vacuum transfer device used in the dry etching apparatus, which is constructed as described above, is explained below.The wafer 19 before the stumbling process is fed onto the transfer bin 20, and the wafer 19 is transferred to the transfer bin 20. The wafer 19 is lifted up by the wafer 19. Next, the vacuum transfer chamber 21 is returned to atmospheric pressure by introducing nitrogen gas, the first gate valve 23 is fully opened, and the rotation arm 3Qa is moved to the first gate 1 pulp 23 by rotation of the motor 40a.
At the same time, the transfer arm 25fL rotates to the fixed tooth i'1436, the intermediate gear 351L, and the rotation gear 3.
The transfer bin 20 is moved by the reversing drive unit based on the combination of 4a.
After that, the transfer pin 2o lowers the wafer 19 to the wafer receiver provided at the tip of the transfer arm.
II //). Next, one morph 401:1 reverse rotation is carried out, the carrying arm 262L returns to the vacuum transfer chamber 21, the first gate 1-valve 23 is closed, and the vacuum exhaust port 22
For example, if the set vacuum level is ○1 Torri, it will be 4 no.

さらに第2ゲー1−バルブを開き搬入アーム26aを同
様に反応室26内のノ、を板電極28」二に移動し、ウ
ェハ19は移載ピン29により持ち上げられ、衆人アー
ム26aが後退した後、基板電極28に載置され、第2
ゲ・−1−バルブ24を閉じるっつぎに真空搬送室21
を一山び窒素ガスの導入により大気圧に戻し、第1ゲー
1−バルブ23ケ開き同様にしてウェハ19の次に供給
される2枚1−1のウェハ19a(図示せず)を搬入ア
ーム26a上に移載し真空搬送室21内に搬入し内部全
真空υ1気し、反応室26内のウェハ19のドライエツ
チングが終了する寸で待機する。
Further, the second gate 1-valve is opened, and the loading arm 26a is similarly moved to the plate electrode 28'' in the reaction chamber 26, the wafer 19 is lifted by the transfer pin 29, and after the public arm 26a is retreated. , placed on the substrate electrode 28, and the second
After closing the valve 24, the vacuum transfer chamber 21 is opened.
The pressure is returned to atmospheric pressure by introducing nitrogen gas, and the first gate 1-valve 23 is opened in the same way. Two wafers 1-1 (not shown) to be supplied next to the wafer 19 are transferred to the loading arm. The wafer 19 is transferred onto the wafer 26a and carried into the vacuum transfer chamber 21, where the entire internal vacuum υ1 is created, and the wafer 19 in the reaction chamber 26 is placed on standby until the dry etching of the wafer 19 in the reaction chamber 26 is about to be completed.

ウェハ19が搬入された反応室26内には、ドライエツ
チングのための処理ガス金離し、真空制気口27より排
気しろ二から排気調整ブl″などにより、設定圧力を保
し、内)りISに設けられた一対の51′行\1′板電
極の一方に13.56MH2の高周波電力を印加し、プ
ラズマ放?11.奮起こしウェハ19」二の処理膜をド
ライエツチングする。ドライエツチングが終了すると、
移載ピン29によりウェハ19看斗〒ち上げ第2ゲート
バルブ24を開き、搬出アーム26bを搬入アート26
2Lと同(・pの動イ′1により移載ビンの軸心上まで
移dU+させ、移載ピン29ケ下降しウェハ19を搬出
アーム先端のウェハ受は部に移・賎し、搬出アーム25
bは真空搬送室21内に戻される。つぎにウェハ19a
(i7戦同じた搬入アーム25aが基板電極28上に移
!IIJ+ L、移載ピンによりウェハ19a(i7基
板電極上に・代作するとともに搬入アーム262Lを真
空搬送室21内に戻し、第2ゲートバルブ24f:閉じ
る。つきに反応室26内ではウェハ19aのドライエッ
チフグ全行ない、真空搬送室21内には窒素ガス全導入
し大気圧に戻して第1ゲー!・バルブ23′fr:開き
搬出アーム25b’i移載ビン20の軸・し上に移動し
、移・賎ピン2oによりウェハ19金持ち上げ搬出アー
ム25b(H真空搬送室21内に戻し、移・賎ビン20
を下降し、ウェハ19金外部に取り出し、3枚1・1の
ウェハ19bが移11ikビン20上に供給され、移1
賎ピア20により持ち上げ、搬入アームを移載ピン2o
の軸7シ・上まで移動し、移載ピン20i下降さぜ、ウ
ェハ19b’i、1IlQ人アーム262L上に移・賎
し、搬入アーム26af6:真空搬送室21内に戻し第
1ゲートバルブ23を閉じるっ以後順次同じ動作を繰り
返す、 以上のように本実施例によれば、1個の4空搬送室内に
処理物であるウェハを移載する2組の搬送アームと、そ
h−それの搬送アーム全旋回するための回転支持部をも
つ旋回アームと、旋回アームに固定され各々が独)′L
して回転駆動さ71、しかも同心にe記1べした2木の
回転軸と、旋回−f−ムの回転方向とは逆向きに搬送ア
ームを旋回させる反転駆り01部を設けることにより、
ウェハ搬入」IV、り出しのための真空順送基金1個に
することができ、ゲ\ −1−バルブの数も削減でき、搬送゛アームの1jJ7
動部分も同・し・にすることに上り同・しに構成し/こ
2組の回11シ、軸に回転を与°えるだけで搬送アーム
の移動が可能になり搬iA系の部品も大幅に削減でき、
さらにJ−11−空構成部品も削減でき、装置tf17
造を−)7(i素化することかできだ。
In the reaction chamber 26 into which the wafer 19 has been carried, a processing gas for dry etching is released, and the pressure is maintained at a set pressure by means of an exhaust adjustment valve 1'' and the like. A high frequency power of 13.56 MH2 is applied to one of the pair of 51' row \1' plate electrodes provided on the IS, and the processed film on the wafer 19'2 is dry etched by plasma radiation. When dry etching is finished,
Lift up the wafer 19 using the transfer pin 29, open the second gate valve 24, and move the unloading arm 26b to the loading art 26.
Same as 2L (・Move the wafer 19 to the axis of the transfer bin by moving 1'1 to dU+, lower the transfer pin 29, transfer the wafer 19 to the wafer holder at the tip of the carry-out arm, and place the wafer 19 at the tip of the carry-out arm. 25
b is returned into the vacuum transfer chamber 21. Next, the wafer 19a
(The carrying arm 25a, which was the same as the i7 game, is moved onto the substrate electrode 28! IIJ + L, the transfer pin is used to make a substitute for the wafer 19a (on the i7 substrate electrode), and the carrying arm 262L is returned to the vacuum transfer chamber 21, and the second Gate valve 24f: Closed. At the same time, the wafer 19a is completely dry-etched in the reaction chamber 26, nitrogen gas is fully introduced into the vacuum transfer chamber 21, and the pressure is returned to atmospheric pressure. Valve 23'fr: Opened. The carry-out arm 25b'i moves onto the shaft of the transfer bin 20, lifts up the 19 gold wafer with the transfer pin 2o, returns it to the vacuum transfer chamber 21, and transfers it to the transfer bin 20.
is lowered, the wafer 19 is taken out from the outside, three wafers 1.1 are supplied onto the transfer bin 20, and the transfer 1
Lift it up using the pier 20 and attach the loading arm to the loading pin 2o.
The wafers 19b'i and 1IlQ are moved onto the transfer arm 262L by the transfer pin 20i, and transferred onto the transfer arm 26af6: the transfer arm 26af6: the vacuum transfer chamber 21 is returned to the first gate valve 23. After closing, the same operation is repeated sequentially.As described above, according to this embodiment, there are two sets of transfer arms for transferring the wafers to be processed into one four-empty transfer chamber; A swivel arm with a rotating support part for full rotation of the transfer arm, and a swivel arm that is fixed to the swivel arm and each has a
By providing a rotary drive unit 71, two concentric rotating shafts marked e, and a reversing drive unit 01 for rotating the transfer arm in the opposite direction to the rotating direction of the rotating arm.
It is possible to use only one vacuum progressive fund for wafer loading and unloading, and the number of valves can be reduced.
The moving parts are also constructed in the same way, and the transfer arm can be moved by simply applying rotation to the shaft of these two sets of parts. can be significantly reduced,
Furthermore, the number of J-11-empty components can be reduced, and the equipment tf17
It is possible to make the structure -) 7 (i).

なお実施例において反転駆!7+ iτISに3fΦの
歯[lI′を用いたか、ペルー−などの伝達手段でもよ
く、7’7 i+旋回アームの回転方向を逆転して搬送
アームに伝えられたらよい。
In addition, in the example, the reverse drive! 7+iτIS may use 3fΦ teeth [lI', or a transmission means such as Peru-1 may be used, and 7'7i+ may be transmitted to the transfer arm by reversing the direction of rotation of the rotating arm.

発明の効果 以上のように本発明は真空ポンプに接続された1個の真
空搬送室内に搬送物ケ移載する2組の搬送アームを設け
、それぞれの搬送アームを旋回するための回転支持部を
もつ旋回アームと、旋回アームに固定さり、各4が独立
して回転駆動され、しかもfil・bに配置した2本の
回転軸と、旋回アームと搬送アームを逆向きに旋回させ
る反転駆動部と真空搬送室の側壁に搬送路の開閉のため
のグー1−バルブ金設けることにより、真空搬送室を1
個VC削減でき、グー1−バルブの数も半減でき、真空
+16成部品も大幅に削減できるなど、′!A置装造の
簡素化がはかれ、真空搬送室1(lI!ilたけを直空
J−11気ずれによく、排気114間も削減でき、搬送
のために費やす時間が短縮できるなど、単位時間あたり
の処l¥1!数景も向上するなど、その実用的効果回1
人なるものかある。
Effects of the Invention As described above, the present invention provides two sets of transfer arms for transferring objects into one vacuum transfer chamber connected to a vacuum pump, and includes a rotating support section for rotating each transfer arm. a rotating arm, two rotating shafts fixed to the rotating arm, each of which is driven to rotate independently, and located at fil/b, and a reversing drive unit that rotates the rotating arm and the transfer arm in opposite directions. By installing a valve metal on the side wall of the vacuum transfer chamber for opening and closing the transfer path, the vacuum transfer chamber can be
The number of VCs can be reduced, the number of goo valves can be halved, and the number of vacuum + 16 components can be greatly reduced.'! The structure of the A-device has been simplified, the vacuum transfer chamber 1 (lI!il) is good for direct air J-11 airflow, the exhaust air 114 can be reduced, and the time spent for transfer can be shortened. Cost per hour: 1 yen! Practical effects such as improving the number of views 1st time
There is such a thing as a person.

【図面の簡単な説明】[Brief explanation of drawings]

第1図口、従来の真空中での搬送装置の配置図、第2図
は本発明の一実施例における真空中における搬送装置の
配置図、第3図は第21シ1の搬送部の構造を示す斜視
図である。 19・・・・・・ウェハ、21・・・一真空搬送室、2
3・・・第1ゲー1−バルブ、24・・第2ゲ−1−バ
ルブ、252L ・・搬入アーム、25b ・・搬出ア
ーム、3Qa 、30b−・”旋回アーム、31a.、
3lb・・回転軸、32・・・・・輔受け、33a 、
33b・・・軸、3 4 a. 、 3 4 b・−族
1川iA4中、35a。 35b・・ ・中間+.qXr中、36・・・・・・固
定1東中、37支持体、38a 、 3sb−回転山中
、3 つa139b ・・駆動山中、40a,40b・
 モータ。 代JM1人の氏名 !「理士 中 尾 敏 男 ほか1
名第1図 第2図 幻奴 第 3 図
Fig. 1 is a layout diagram of a conventional conveying device in a vacuum, Fig. 2 is a layout diagram of a conveying device in a vacuum according to an embodiment of the present invention, and Fig. 3 is a structure of the conveying section of the 21st part. FIG. 19...Wafer, 21...1 Vacuum transfer chamber, 2
3...First gear 1-valve, 24...Second gear 1-valve, 252L...Carry-in arm, 25b...Carry-out arm, 3Qa, 30b-.''Swivel arm, 31a.
3lb...rotating shaft, 32...support holder, 33a,
33b...axis, 3 4 a. , 35a in 34b·-family 1kawa iA4. 35b... ・Intermediate+. In qXr, 36...Fixed 1 in the east, 37 Support, 38a, 3sb-In the rotating mountain, 3 a139b...In the driving mountain, 40a, 40b.
motor. Name of one JM representative! ``Physical engineer Toshio Nakao and others 1
Figure 1 Figure 2 Phantom Guy Figure 3

Claims (1)

【特許請求の範囲】[Claims] 真空抽気手段に接続された1個の真空搬送室内にあって
、搬送物を移載する2組の搬送アームと、それぞれの搬
送アームを旋回するだめの回転支持部ケもつ旋回アーム
と、前記旋回アームに固定され、各4が独立して回転駆
動されかつ同心に配置した2木の回転軸と、旋回アーム
の回転方向とは逆向きに搬送アーム全旋回させる反転駆
動手段と、前記真空搬送室の側壁に搬送路の開閉手段と
を設けた真空中における搬送装置。
A rotating arm which is located in one vacuum transfer chamber connected to a vacuum extraction means and has two sets of transfer arms for transferring and loading the transferred items, a rotating support portion for rotating each transfer arm, and the rotating arm. two rotating shafts fixed to the arm, each of which is driven to rotate independently and arranged concentrically; a reversing drive means for fully rotating the transfer arm in a direction opposite to the rotational direction of the rotating arm; and the vacuum transfer chamber. A conveyance device in a vacuum, which is provided with means for opening and closing a conveyance path on the side wall of the conveyor.
JP20613183A 1983-11-02 1983-11-02 Conveyor in vacuum Pending JPS6098628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20613183A JPS6098628A (en) 1983-11-02 1983-11-02 Conveyor in vacuum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20613183A JPS6098628A (en) 1983-11-02 1983-11-02 Conveyor in vacuum

Publications (1)

Publication Number Publication Date
JPS6098628A true JPS6098628A (en) 1985-06-01

Family

ID=16518294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20613183A Pending JPS6098628A (en) 1983-11-02 1983-11-02 Conveyor in vacuum

Country Status (1)

Country Link
JP (1) JPS6098628A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62195143A (en) * 1986-02-21 1987-08-27 Nippon Kogaku Kk <Nikon> High-speed exchange device for substrate
JPH0215623A (en) * 1988-04-25 1990-01-19 Applied Materials Inc Magnetic field enhancing plasma etching reactor
JPH0283182A (en) * 1988-09-16 1990-03-23 Tokyo Ohka Kogyo Co Ltd Handling unit
US5314294A (en) * 1991-07-31 1994-05-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor substrate transport arm for semiconductor substrate processing apparatus
EP0843340A2 (en) * 1996-11-18 1998-05-20 Applied Materials, Inc. Method and apparatus for processing wafers
JP2000512082A (en) * 1996-06-13 2000-09-12 ブルックス オートメーション インコーポレイテッド Multi-level substrate processing equipment
US6635115B1 (en) 1996-11-18 2003-10-21 Applied Materials Inc. Tandem process chamber

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62195143A (en) * 1986-02-21 1987-08-27 Nippon Kogaku Kk <Nikon> High-speed exchange device for substrate
JPH0215623A (en) * 1988-04-25 1990-01-19 Applied Materials Inc Magnetic field enhancing plasma etching reactor
JPH0283182A (en) * 1988-09-16 1990-03-23 Tokyo Ohka Kogyo Co Ltd Handling unit
US5314294A (en) * 1991-07-31 1994-05-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor substrate transport arm for semiconductor substrate processing apparatus
JP2000512082A (en) * 1996-06-13 2000-09-12 ブルックス オートメーション インコーポレイテッド Multi-level substrate processing equipment
JP2008258650A (en) * 1996-06-13 2008-10-23 Brooks Autom Inc Multi-level substrate processing apparatus
EP0843340A2 (en) * 1996-11-18 1998-05-20 Applied Materials, Inc. Method and apparatus for processing wafers
EP0843340A3 (en) * 1996-11-18 1999-02-17 Applied Materials, Inc. Method and apparatus for processing wafers
US6635115B1 (en) 1996-11-18 2003-10-21 Applied Materials Inc. Tandem process chamber
US7655092B2 (en) 1996-11-18 2010-02-02 Applied Materials, Inc. Tandem process chamber

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