JPS6030132A - Photolithography device - Google Patents

Photolithography device

Info

Publication number
JPS6030132A
JPS6030132A JP58137702A JP13770283A JPS6030132A JP S6030132 A JPS6030132 A JP S6030132A JP 58137702 A JP58137702 A JP 58137702A JP 13770283 A JP13770283 A JP 13770283A JP S6030132 A JPS6030132 A JP S6030132A
Authority
JP
Japan
Prior art keywords
blade
optical system
wafer
original image
masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58137702A
Other languages
Japanese (ja)
Inventor
Susumu Tawa
田和 邁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58137702A priority Critical patent/JPS6030132A/en
Publication of JPS6030132A publication Critical patent/JPS6030132A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70066Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds

Abstract

PURPOSE:To eliminate the effect of dust by a masking mechanism while minimizing the quantity of gradation on a wafer through optical technique by adding a blade focus optical system to an exposure optical system for an exposure light source and providing the masking mechanism into the blade focus optical system. CONSTITUTION:A blade focus optical system 16 is added to a conventional exposure optical system in an exposure light source 15, and a masking mechanism 18 is mounted where a blade 19 images on the surface of an original picture 10. The blade 19 is fitted at a position optically conjugated to the position of the original picture 10 to the wafer 12. Consequently, the conventional exposure optical system is changed into an optical system in which the calescence point of an extra-high pressure mercury lamp 2 is imaged onto an entrance pupil in a reducing glass 11 in a conventional manner and the blade 19 is imaged onto the surface of the original picture 10. The masking mechanism 18 consists of four blades 23, 24, 35, 36 each driven independently in the X direction and the Y direction, the opening and closing of the X blades 23, 24 are controlled by X blade driving motors 29, 30, the opening and closing of the blades in the Y direction are also controlled similarly, thus masking the desired section of the surface of the original picture 10 from the four directions.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明はフォトリソグラフィー装置に関する。[Detailed description of the invention] [Field of application of the invention] The present invention relates to photolithography apparatus.

〔発明の背景〕[Background of the invention]

従来のフォトリソグラフィーは第1図に示すように原画
lOの上方に1枚以上の羽根(以下ブレードと記す)で
原画面内の所望部分全マスクするマスキング機構8が装
着されている。
In conventional photolithography, as shown in FIG. 1, a masking mechanism 8 is installed above the original image 10 to mask the entire desired portion of the original image using one or more blades (hereinafter referred to as blades).

すなわち、超高圧水銀ランプ2、集光鏡3、平面鏡4、
ミキサーレンズ群5、平面鏡6、およびコンデンサレノ
シフ −Ah A %入謹萼篠9百1箇丁−片W前記マ
スキング機構8が位置ずけられ、そのブレード9を通し
た光が原画lOのパターンを縮小レンズ11を介してウ
ェハ12上に写し出すものである。なお、前記ウェハ1
2は装置ベース14上のXYZステージ13に載置され
ている。
That is, an ultra-high pressure mercury lamp 2, a condensing mirror 3, a plane mirror 4,
Mixer lens group 5, plane mirror 6, and condenser lens group -Ah is projected onto the wafer 12 through the reduction lens 11. Note that the wafer 1
2 is placed on the XYZ stage 13 on the device base 14.

このような装置に2いて、ウェハ12上に投影される原
画10のマスク端ボケ量を最小限にするにはブレード9
が原画10面と密着している状態が理想的であるが、原
画10面付近には塵付着防止用のペリクル膜やマスキン
グ機構以外の機構部があることから、ブレード9を原画
lOに近ずけるには限界がめった。その為、ブレード9
と原画10間に間隙が生じてウェハ12上に投影される
原画lOのマスク端(ブレード9のエツジ端)ボケが少
なからずめった。
In such an apparatus, in order to minimize the amount of mask edge blur of the original image 10 projected onto the wafer 12, the blade 9
Ideally, the blade should be in close contact with the original image 10, but since there is a pellicle film for preventing dust adhesion and mechanical parts other than the masking mechanism near the original image 10, the blade 9 should not be close to the original image lO. There was a limit to what I could do. Therefore, blade 9
A gap was created between the original image 10 and the original image 10, and the edge of the mask (edge end of the blade 9) of the original image 10 projected onto the wafer 12 was blurred to some extent.

又、最も塵をきらう原画lOの真上でマスキング機構8
の機構部が移動する為原画lOに対する塵の付着と云う
点で大きな問題がめった。
In addition, the masking mechanism 8
Since the mechanical parts of the image forming apparatus were moved, a serious problem occurred in terms of dust adhesion to the original image 10.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、フォトリソグラフィー装置にとって致
命傷ともいえる原画上の塵付着を最小限に抑えることで
塵影転写によるウェハの歩留シ低下を防ぎ、同時にブレ
ードによる原画マスク時のウェハ上ボケ量を最小限に抑
えることで露光可能面積の増加を図かり、ウェハ上のチ
ッグエリャを効率よく活用出来るフォトリングラフイー
装置を提供するにある。
The purpose of the present invention is to prevent a drop in wafer yield due to dust shadow transfer by minimizing dust adhesion on the original image, which can be a fatal damage to photolithography equipment, and at the same time reduce the amount of blur on the wafer when masking the original image with a blade. It is an object of the present invention to provide a photophosphorography device that can increase the exposed area by minimizing the area and efficiently utilize the chip area on a wafer.

〔発明の概要〕[Summary of the invention]

本発明は、露光光源の露光光学系にブレードフォーカス
光学系を付加しブレードフォーカス光学系内にマスキン
グ機構を設けることでマスキング機構を原画面上よシ離
して機構部による塵の影響全納ち、同時に光学的手法に
よシ原画面上を密着マスクすることでウェハ上のボケ量
を最小限にする様にしたものである。
The present invention adds a blade focus optical system to the exposure optical system of the exposure light source and provides a masking mechanism within the blade focus optical system, thereby separating the masking mechanism from above the original screen to completely eliminate the influence of dust caused by the mechanism. The amount of blur on the wafer is minimized by closely masking the original screen using an optical method.

〔発明の実施例〕[Embodiments of the invention]

以下本発明を実施例によって詳細に説明する。 The present invention will be explained in detail below using examples.

第2図は本発明によるフォトリソグラフィー装置の一実
施例を示す構成図である。同図において、マスキング機
構18を内蔵した露光光源15と、ウェハ12上へ転写
されるべきパターンを有する原画lO並びに原画10を
縮小投影する縮小レンズ11と、ウェハ12を露光位置
に搬送して縮小レンズ11の焦点位置へ位置決めするX
YZステージ13、これらの各要素が数少付く基準とな
る装置のベース14から成っている。
FIG. 2 is a block diagram showing an embodiment of a photolithography apparatus according to the present invention. In the figure, an exposure light source 15 with a built-in masking mechanism 18, a reduction lens 11 for reducing and projecting an original image 1O having a pattern to be transferred onto a wafer 12 and the original image 10, and a reduction lens 11 for transporting the wafer 12 to an exposure position and reducing it. X to position the focal position of the lens 11
It consists of a YZ stage 13 and a base 14 of the device, which serves as a reference to which a few of these elements are attached.

露光光源15内部には、超高圧水銀ランプこの光を断面
楕円形の集光鏡3で集め平面鏡4で向きを変えた後ミキ
サーレンズ群5で均一化し、平面鏡6で再度方向を変え
てコンデンサレンズ7で集め、その後原画lO面上へ投
影する従来の露光光学系にブレードフォーカス光学系1
6が付加されておシ、ブレード19が原画lO向上に結
像する位置へマスキング機構18が設けられている。
Inside the exposure light source 15, there is an ultra-high pressure mercury lamp. This light is collected by a condenser mirror 3 with an elliptical cross section, and the direction is changed by a plane mirror 4. After that, it is made uniform by a mixer lens group 5, and the direction is changed again by a plane mirror 6, and then a condenser lens is used. A blade focus optical system 1 is added to the conventional exposure optical system that collects the original image at 7 and then projects it onto the original image plane.
6 is added, and a masking mechanism 18 is provided at a position where the blade 19 forms an image on the original image 10.

前記ブレードフォーカス光学系16は、複数枚のし/ズ
(フォーカスレンズ群17)と1組のミキサーレンズ群
20により成っている。フォーカスレンズ群17とミキ
サーレンズ200間にある。
The blade focus optical system 16 includes a plurality of lenses (focus lens group 17) and a mixer lens group 20. It is located between the focus lens group 17 and the mixer lens 200.

ウェハ12対する原画lOの位置と光学的に共役な位置
へブレード19が設けられている。これによシ、超高圧
水銀う/プ2の輝点をミキサーレンズ群5に拡大結像さ
せさらにその像を縮小レンズ11の入射瞳上に結像させ
る従来の露光光学系は、超高圧水銀ランプ2の輝点を従
来通シ縮小レンズ11の入射瞳上へ結像させ、さらにブ
レード19を原画10面上に結像させる光学系に変わる
A blade 19 is provided at a position optically conjugate with the position of the original image lO with respect to the wafer 12. Accordingly, the conventional exposure optical system that enlarges and images the bright spot of the ultra-high-pressure mercury film 2 on the mixer lens group 5 and then forms the image on the entrance pupil of the reduction lens 11, The conventional optical system is changed to one in which the bright spot of the lamp 2 is imaged onto the entrance pupil of the reduction lens 11, and the blade 19 is imaged onto the original image 10.

第3図に前記マスキング機構18の斜視図を、第4図に
部分詳細図を示す。マスキング機構18はX方向Y方向
に各々独立駆動される4枚のブレード23,24,35
.36よシ成る。X方向マスク21とY方向マスク33
は同じ要素で同一に構成され各マスクのベースであるX
フレーム22、Xフレーム34がマスキング機構内蔵露
光光源15の骨組に固定されている。
FIG. 3 shows a perspective view of the masking mechanism 18, and FIG. 4 shows a partially detailed view. The masking mechanism 18 has four blades 23, 24, and 35 each independently driven in the X and Y directions.
.. It consists of 36. X direction mask 21 and Y direction mask 33
is composed of the same elements and is the base of each mask
The frame 22 and the X frame 34 are fixed to the framework of the exposure light source 15 with a built-in masking mechanism.

Xフレーム22は中抜き構造となっておりその中抜き部
分をXブレード23とXブレード24が摺動するように
なっている。Xフレーム22の四隅にはXブレード駆動
輪25、Xブレード駆動輪26及びX転動輪、27.2
8が設けられ、各駆動輪25.26は各々独立した駆動
モータ29゜30で駆動されている。Xブレード駆動輪
25はXブレード駆動モータ29のモータ軸に固定され
たXブレード駆動ロー245と、モータ軸を中心にフリ
ーに回転するXブレード駆動ローラ46よシ成ムXブレ
ード駆動輪26はXブレード駆動モータ30のモータ軸
に固定されたXブレード駆動ローラ48とモータ軸を中
心にフリーに回転するXブレード転動ローラ47よシ成
る。
The X frame 22 has a hollow structure, and the X blade 23 and the X blade 24 slide on the hollow part. At the four corners of the X frame 22 are an X blade drive wheel 25, an X blade drive wheel 26, an X rolling wheel, 27.2
8 are provided, and each drive wheel 25,26 is driven by an independent drive motor 29,30. The X-blade drive wheel 25 is made up of an X-blade drive row 245 fixed to the motor shaft of the X-blade drive motor 29 and an X-blade drive roller 46 that freely rotates around the motor shaft. It consists of an X-blade drive roller 48 fixed to the motor shaft of the blade drive motor 30 and an X-blade rolling roller 47 that rotates freely around the motor shaft.

各モータ29,30の軸は図示しない段差がついておシ
、この段差に、Xブレード駆動輪25の場合はXブレー
ド駆動ローラ45が、Xブレード駆動輪26の場合はX
グレード転動ローラ47が当シ各々その下にXブレード
転勤ローラ46、Xブレード駆動ロー248を取り付け
て最下端をカラー49で止めている。又、X転動輪27
.28は各々上下2ケのフリー回転転勤ローラよシ成っ
ている。Xフレーム22の四隅にある上下2ケづつのロ
ーンには各々エンドレスのXグレード駆動ワイヤ31と
Xブレード駆動ワイヤ32がはめ込まれ、Xブレード駆
動ワイヤ31はXグレード23にねじ込まれたピン50
に接着固定されXブレード駆動モータ29のモータ軸に
ねじ止め固定されたXブレード駆動ローラ45によって
モータの回転が伝えられ、Xブレード23をXフレーム
22の中抜き部分内で摺動させるようになっている。X
ブレード駆動ワイヤ32もXブレード駆動ワイヤ31と
同様にしてXブレード24をXフレーム22の中抜き部
分内で摺動させるようになっている。以上によりXブレ
ード駆動モータ29、Xブレード駆動モータ30の回転
を制御することによシXブレード23、Xブレード24
の開閉を制御することが可能になる。
The shafts of each motor 29, 30 have a step (not shown), and on this step, an X blade drive roller 45 is attached in the case of the
The grade rolling roller 47 has an X-blade transfer roller 46 and an X-blade drive row 248 attached therebelow, and its lowermost end is fixed with a collar 49. Also, X rolling wheel 27
.. Each of the rollers 28 consists of two freely rotating transfer rollers, upper and lower. Endless X-grade drive wires 31 and X-blade drive wires 32 are fitted into two upper and lower loans at the four corners of the X-frame 22, respectively, and the X-blade drive wire 31 is connected to a pin 50 screwed into the X-grade 23.
The rotation of the motor is transmitted by the X-blade drive roller 45 which is glued and fixed to the motor shaft of the X-blade drive motor 29 and screwed to the motor shaft of the X-blade drive motor 29, causing the X-blade 23 to slide within the hollow portion of the ing. X
The blade drive wire 32 is configured to slide the X blade 24 within the hollow portion of the X frame 22 in the same manner as the X blade drive wire 31. By controlling the rotation of the X-blade drive motor 29 and the X-blade drive motor 30 as described above, the X-blade 23 and the X-blade 24 are
It becomes possible to control the opening and closing of

Y方向マスク33も前述のX方向マスク21と全く同様
でこれらにより原画10面の所望部分を自由に4方向か
らマスクすることが出来る。
The Y-direction mask 33 is completely similar to the aforementioned X-direction mask 21, and with these, desired portions of the original image 10 can be masked freely from four directions.

〔発明の効果〕〔Effect of the invention〕

以上述べたことから明らかなように、本発明によれば原
画上の塵付着を抑えることができ、ブレードによる原画
マスク時のウエノ蔦上ボケ量を抑えることができる。
As is clear from the above description, according to the present invention, it is possible to suppress dust adhesion on an original image, and it is possible to suppress the amount of blur on the vine when masking the original image with a blade.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のフォトリングンフイー装置の一例を示す
構成図、第2図は本発明によるフォトリソグラフィー装
(dの一実施例を説明する構成図、第3図は上記実施例
の一部であるマスキング機構の外観を示す斜視図、第4
図は第3図の一部分の詳細斜視図でめる。 1・・・露光光源、2・・・超高圧水銀ランプ、3・・
・集光鏡、4・・・平面鏡(1)、5・・・ミキサーレ
ンズ群(l八 6・・・平面鏡(2)、?・・・コツプ
フサレンズ、lO・・・原画、11・・・縮小し/ズ、
12・・・ウェハ、13・・・XYZステージ、14・
・・装置ペース、15・・・マスキング機構内蔵露光光
源、16・・・ブレードフォーカス光学系、17・・・
フォーカスレ/ズ群、18・・・マスキング機構(2)
、20・・・ミキサーレンズ群(2)、21・・・皐 
I 国 第 3 図 1
FIG. 1 is a block diagram showing an example of a conventional photolithography device, FIG. 2 is a block diagram illustrating an embodiment of a photolithography device (d) according to the present invention, and FIG. 3 is a part of the above embodiment. A fourth perspective view showing the appearance of the masking mechanism.
The figure is a detailed perspective view of a portion of FIG. 1... Exposure light source, 2... Ultra-high pressure mercury lamp, 3...
・Concentrator mirror, 4...Plane mirror (1), 5...Mixer lens group (18) 6...Plane mirror (2), ?...Kopfusa lens, 1O...Original picture, 11...Reduction S/Z,
12... Wafer, 13... XYZ stage, 14...
...Device pace, 15...Exposure light source with built-in masking mechanism, 16...Blade focus optical system, 17...
Focus lens group, 18...masking mechanism (2)
, 20... Mixer lens group (2), 21... Go
Country I No. 3 Figure 1

Claims (1)

【特許請求の範囲】[Claims] 1、 レジスト塗布したウェハ上へ原画を光学的に投影
露光するフォトリングラフイー装置に於て、ウェハに対
する原画の位置と光学的に共役な位置を露光光源内部に
作り、その共役位置に原画面のマスキング要素を設けて
ウェハ上をマスク可能にしたことを特徴とするフォトリ
ソグラフィー装置。
1. In a photophosphorography device that optically projects and exposes an original image onto a resist-coated wafer, a position optically conjugate to the position of the original image with respect to the wafer is created inside the exposure light source, and the original image is placed at that conjugate position. 1. A photolithography apparatus characterized in that a masking element is provided to enable masking on a wafer.
JP58137702A 1983-07-29 1983-07-29 Photolithography device Pending JPS6030132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58137702A JPS6030132A (en) 1983-07-29 1983-07-29 Photolithography device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58137702A JPS6030132A (en) 1983-07-29 1983-07-29 Photolithography device

Publications (1)

Publication Number Publication Date
JPS6030132A true JPS6030132A (en) 1985-02-15

Family

ID=15204816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58137702A Pending JPS6030132A (en) 1983-07-29 1983-07-29 Photolithography device

Country Status (1)

Country Link
JP (1) JPS6030132A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045252A (en) * 1983-08-23 1985-03-11 Canon Inc Illuminating system of projecting and exposing device
EP0358521A2 (en) * 1988-09-09 1990-03-14 Canon Kabushiki Kaisha An exposure apparatus
WO1993000614A1 (en) * 1991-06-24 1993-01-07 Etec Systems, Inc. Small field scanner
JPH0715876B2 (en) * 1985-07-03 1995-02-22 株式会社ニコン Exposure method and photolithography apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5520686U (en) * 1978-07-28 1980-02-08
JPS5686265A (en) * 1979-12-14 1981-07-13 Toyota Motor Corp Bite prevention device of o ring

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5520686U (en) * 1978-07-28 1980-02-08
JPS5686265A (en) * 1979-12-14 1981-07-13 Toyota Motor Corp Bite prevention device of o ring

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045252A (en) * 1983-08-23 1985-03-11 Canon Inc Illuminating system of projecting and exposing device
JPH0429212B2 (en) * 1983-08-23 1992-05-18
JPH0715876B2 (en) * 1985-07-03 1995-02-22 株式会社ニコン Exposure method and photolithography apparatus
EP0358521A2 (en) * 1988-09-09 1990-03-14 Canon Kabushiki Kaisha An exposure apparatus
WO1993000614A1 (en) * 1991-06-24 1993-01-07 Etec Systems, Inc. Small field scanner

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