JPS60262458A - Manufacture of solid-state image pickup device - Google Patents
Manufacture of solid-state image pickup deviceInfo
- Publication number
- JPS60262458A JPS60262458A JP59118090A JP11809084A JPS60262458A JP S60262458 A JPS60262458 A JP S60262458A JP 59118090 A JP59118090 A JP 59118090A JP 11809084 A JP11809084 A JP 11809084A JP S60262458 A JPS60262458 A JP S60262458A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transparent layer
- solid
- inorganic material
- photosensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 17
- 239000011147 inorganic material Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims description 27
- 238000003384 imaging method Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000007493 shaping process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は新規な固体撮像装置の製造方法に関する。より
詳しくは、光センサの実効的な開口率を高イすることが
でき、しかも製造中及び製造後における劣化の生じる惧
れのない新規な固体撮像装置の製造方法を提供しようと
するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a novel solid-state imaging device. More specifically, the present invention aims to provide a novel method for manufacturing a solid-state imaging device that can increase the effective aperture ratio of an optical sensor and is free from deterioration during and after manufacturing. .
背景技術とその問題点
第２図は固体撮像デバイスの従来例を示す断面図であり
、同図において、ａは単結晶シリコンからなる半導体基
板、ｂは該半導体基板ａの表面部に選択的に形成された
光センサ、Ｃは半導体基板ａの表面部に選択的に形成さ
れた垂直転送レジスタ、ｄは半導体表面上に形成された
Ｓ ｉ ０２膜、ｅは該Ｓ ｉ Ｏ２膜ｄ内に埋設され
、半導体表面の光センサ以外の領域への光を遮るフォト
シールド膜で、例えばアルミニウムからなる。BACKGROUND ART AND THEIR PROBLEMS FIG. 2 is a cross-sectional view showing a conventional example of a solid-state imaging device. The formed optical sensor, C is a vertical transfer register selectively formed on the surface of the semiconductor substrate a, d is an S i 02 film formed on the semiconductor surface, and e is embedded in the S i O 2 film d. A photoshield film that blocks light from reaching areas other than the optical sensor on the semiconductor surface, and is made of, for example, aluminum.
このような固体撮像デバイスは構造−Ｌセルの面積に占
めるセンサ開口面積の割合、即ち、センサ開口率を１０
０％にすることは不可能であり、一般に２０〜３０％に
すぎない。従って、入射した光のごく一部しか光センサ
ｂによって受光されず、感度が低かった。Such a solid-state imaging device has a structure in which the ratio of the sensor aperture area to the area of the L cell, that is, the sensor aperture ratio is 10
It is impossible to get it to 0%, generally only 20-30%. Therefore, only a small portion of the incident light was received by the optical sensor b, resulting in low sensitivity.
そこで、固体撮像デバイスの実効的開口率を高めるべく
、デバイスの表面に屈折光学素子たるしンチキュラーレ
ンズを形成し、光センサの開口部からずれたところに向
い本来なら光センサ内に入射されない光をレンチキュラ
ーレンズにより開口部に集光する技術が例えば特開昭５
５−１２４３６６号公報等によって公表されている。そ
して、その公報においてはレンチキュラーレンズの材料
としてガラスを用いることが記載されているが、どのよ
うな方法でレンズ素子の曲率半径を制御するかは示され
ていない。そして、実際上充分な集光効果を得られるよ
うにするためにはレンズ素子の曲率半径を相当に小さく
する必要があるが、レンズ素子の曲率半径を小さくする
ことは実際に非常に難しい。又、レンズを樹脂により形
成することも開発されている。熱可塑性樹脂を使うと樹
脂層の形成後それを再溶融することにより表面張力で層
表面がまるみを帯びるようにすることができる。従って
、比較的集光効果の高いレンズが得られる可能性がある
。しかしながら、樹脂は熱に弱く、経時変化が生じ易い
ので製造工程中、あるいは製造後において劣化、変形す
る可能性がある。Therefore, in order to increase the effective aperture ratio of solid-state imaging devices, a refractive optical element, ie, a lenticular lens, is formed on the surface of the device, and the lens is directed away from the aperture of the optical sensor, allowing light that would otherwise not enter the optical sensor. For example, a technology to focus light onto an aperture using a lenticular lens was developed in Japanese Patent Application Laid-open No. 5
It has been published in Publication No. 5-124366 and the like. Although the publication describes the use of glass as a material for the lenticular lens, it does not indicate how to control the radius of curvature of the lens element. In order to actually obtain a sufficient light condensing effect, it is necessary to considerably reduce the radius of curvature of the lens element, but it is actually very difficult to reduce the radius of curvature of the lens element. It has also been developed to form lenses from resin. If a thermoplastic resin is used, the surface of the layer can be rounded by surface tension by remelting the resin layer after it is formed. Therefore, there is a possibility that a lens with a relatively high light-gathering effect can be obtained. However, since resin is sensitive to heat and easily changes over time, it may deteriorate or deform during or after the manufacturing process.
そのため、信頼性、安定性に欠けるという問題があった
。Therefore, there was a problem of lack of reliability and stability.
発明の目的
しかして、本発明は、光センサの実効的な開口率を高く
することができ、しかも製造中及び製造後における劣化
の生じる惧れのない新規な固体撮像装置の製造方法を提
供しようとするものである。Purpose of the Invention The present invention provides a novel method for manufacturing a solid-state imaging device that can increase the effective aperture ratio of an optical sensor and is free from deterioration during and after manufacturing. That is.
発明の概要
」１記目的を達成するため本発明固体撮像装置の製造方
法は、固体撮像デバイスが形成された半導体基板上に無
機材料からなる第１の透明層を形成し、該第１の透明層
に対しそれが光センサの開口部上に残存するような選択
的エツチング処理を施し、その後、半導体基板上に無機
材料からなる第２の透明層を形成することにより各光セ
ンサの開口部上に上記第２の透明層からなり上記開口部
に集光するレンズが構成されるようにすることを特徴と
するものである。Summary of the Invention In order to achieve the object 1, the method for manufacturing a solid-state imaging device of the present invention includes forming a first transparent layer made of an inorganic material on a semiconductor substrate on which a solid-state imaging device is formed; The layer is selectively etched so that it remains over the apertures of the photosensors, and then a second transparent layer of inorganic material is formed on the semiconductor substrate to form a second transparent layer over the apertures of each photosensor. The invention is characterized in that a lens is formed of the second transparent layer and condenses light onto the opening.
実施例
以下に、本発明固体撮像装置の製造方法を添付図面に従
って詳細に説明する。EXAMPLES Below, a method for manufacturing a solid-state imaging device of the present invention will be explained in detail with reference to the accompanying drawings.
第１図（Ａ）乃至（Ｃ）は本発明固体撮像装置の製造方
法の実施の一例を工程順に説明するための断面図である
。FIGS. 1A to 1C are cross-sectional views for sequentially explaining an example of the method for manufacturing a solid-state imaging device of the present invention in the order of steps.
（Ａ）第１図（Ａ）に示すように固体撮像デバイスが形
成された半導体基板１表面の絶縁膜２表面−Ｌに無機材
料からなる第１の透明層（膜厚ｌ〜３ルｍ）３を形成す
る。第１の透明層３を形成する無機材料としてはシリコ
ンナイトライド、シリコン酸化膜、タンタル酸化膜ある
いはチタン酸化膜（ＴｉＯ２）等が好ましい。そして、
その＄９材料を例えばＣＶＤ （プラズマＣＶＤ法）や
スパッタ蒸着法により成長させることにより第１の透明
層３を形成する。(A) As shown in FIG. 1(A), a first transparent layer made of an inorganic material (film thickness 1 to 3 m) is formed on the surface -L of the insulating film 2 on the surface of the semiconductor substrate 1 on which the solid-state imaging device is formed. form 3. The inorganic material forming the first transparent layer 3 is preferably silicon nitride, silicon oxide film, tantalum oxide film, titanium oxide film (TiO2), or the like. and,
The first transparent layer 3 is formed by growing the $9 material by, for example, CVD (plasma CVD) or sputter deposition.
尚、第１図において４は半導体基板１の表面部に選択的
に形成された光センサ、５は半導体基板■の表面部に選
択的に形成された垂直転送レジスタ、６は半導体基板１
の表面を覆う絶縁膜２内に埋設されたフォトシールド膜
で、光センサ４と重なり合わないように位置され、光セ
ンサ４以外の領域に向う光を遮る。In FIG. 1, reference numeral 4 denotes an optical sensor selectively formed on the surface of the semiconductor substrate 1, numeral 5 denotes a vertical transfer register selectively formed on the surface of the semiconductor substrate 1, and 6 denotes an optical sensor selectively formed on the surface of the semiconductor substrate 1.
A photoshield film embedded in an insulating film 2 covering the surface of the photo-shield is positioned so as not to overlap the optical sensor 4, and blocks light directed toward areas other than the optical sensor 4.
（Ｂ）次に、第１図（Ｂ）に示すように、第１の透明層
３に対してそれが各光センサ４．４上に残存するような
等方性選択的エツチング処理を施す。この選択的エツチ
ングは通常の半導体製造プロセスにおいて用いられるフ
ォトリングラフィ技術を利用して行う。(B) Next, as shown in FIG. 1(B), the first transparent layer 3 is subjected to an isotropic selective etching process such that it remains on each optical sensor 4.4. This selective etching is performed using photolithography technology used in normal semiconductor manufacturing processes.
７はこのエッチグにより形成された第１の透明層３の凹
部である。本固体撮像装置の製造方法においては各凹部
７．７、・争・が垂直転送レジスタ５．５、・・・と平
行に延びるように形成され、その結果、後の説明で明ら
かなように最終的には垂直転送レジスタ５．５、・・・
と平行なかまぼこ状の集光用レンズが形成されるように
なっている。しかし、縦横に散在する光センサ４．４、
・Φ・に対応する位置に島状に第１の透明層３．３、ｅ
・・を散在させるようにし、その結果、最終的に魚眼状
の集光用レンズが形成されるようにしても良い。かまぼ
こ状のレンズを形成するよりも魚眼状のレンズを形成す
る方が各光センサ４の開口部にその四方から集光される
ようにできるのでより実効的開口率を高めることができ
るけれども製造が面倒であるという欠点を有しており、
本実施例ではかまぼこ状の集光レンズが形成されるよう
にしているのである。7 is a recessed portion of the first transparent layer 3 formed by this etching. In the manufacturing method of this solid-state imaging device, each recess 7.7, . . . is formed so as to extend parallel to the vertical transfer register 5.5, . Specifically, vertical transfer register 5.5,...
A semi-cylindrical condensing lens parallel to the above is formed. However, the optical sensors 4.4 scattered horizontally and vertically,
・First transparent layer 3.3, e in an island shape at a position corresponding to Φ・
... may be scattered, and as a result, a fish-eye condensing lens may be finally formed. Forming a fish-eye lens rather than forming a semi-cylindrical lens allows light to be focused on the aperture of each optical sensor 4 from all sides, which increases the effective aperture ratio. It has the disadvantage that it is troublesome,
In this embodiment, a semicylindrical condensing lens is formed.
本工程で行われるエツチングは等方性エツチングである
ので、残存する第１の透明層３．３、・・・の断面形状
はコニーデ状になり、その側面は斜面８となる。Since the etching performed in this step is isotropic etching, the cross-sectional shape of the remaining first transparent layers 3, 3, .
（Ｃ）その後、第１図（Ｃ）に示すように半導体基板１
表面上に無機材料からなる第２の透明層９をＣＶＤ法に
より形成する。その無機材料は第１の透明層３の無機材
料と同じ材質ないしは同じ屈折率であることが集光効果
を高めるうえで好ましい。そして、そのＣＶＤ法は処理
温度が低くて済むプラズマＣＶＤ法がデバイスに与える
影響を少なくできるので好ましい。(C) After that, as shown in FIG. 1(C), the semiconductor substrate 1
A second transparent layer 9 made of an inorganic material is formed on the surface by CVD. It is preferable that the inorganic material is the same material or has the same refractive index as the inorganic material of the first transparent layer 3 in order to enhance the light gathering effect. The CVD method is preferable because the plasma CVD method, which requires a low processing temperature, can reduce the influence on the device.
このように、各光センサ垂直列４．４、・・上に第１の
透明層３．３、・拳・が下地層として形成された半導体
基板１表面−Ｌに透明な無機材料をＣＶＤ法により成長
させることにより、各光センサ垂直列４．４、・・赤土
において隆起し、各隣接光センサ垂直列４．４、聞出に
おいて凹む第２の透明層９が形成され、その隆起はＣＶ
Ｄ法が持つ平担化特性により丸みを帯びたものとなるの
でかまぼこ状の凸レンズ１０．１０、・・・を成す。従
って、この凸レンズ１Ｏ１ｌｏ、・・・は光センサ４．
４、・・・から両側にずれた位置に向かう光もその集光
機能によって光センサ４．４、・・・へ集光する。依っ
て、各光センサ４．４、・・・の感度は高まり、その実
効的な開口率を高くすることができる。In this way, a transparent inorganic material is deposited by CVD on the surface L of the semiconductor substrate 1 on which the first transparent layer 3.3, . A second transparent layer 9 is formed which is raised in each vertical row of photosensors 4.4, . . . and depressed in each adjacent vertical row of photosensors 4.4, .
Due to the flattening property of the D method, the lenses become rounded, forming semicylindrical convex lenses 10, 10, . . . Therefore, the convex lenses 1O1lo, . . . are connected to the optical sensor 4.
Light directed toward positions shifted to both sides from 4.4, . . . is also focused onto the optical sensors 4.4, . Therefore, the sensitivity of each optical sensor 4.4, . . . is increased, and its effective aperture ratio can be increased.
そして、凸レンズ１０．１０の曲率半径は第１も
の透明Ｒ３の高さ、あるいはその幅等により大きくした
り小さくしたりすることができ、充分な集光効果が得ら
れるようにコントロールできる。特に、本発明により従
来より凸レンズ１０．１０の曲率半径を小さくすること
ができるので、ＣＣＤの小型化により各光センサ間の間
隔が狭まってもそれに応じてレンズの曲率半径を小さく
し、充分な集光効果を得ることができる。実際上感度を
２〜３倍に高め得ることが確認されている。The radius of curvature of the convex lens 10.10 can be made larger or smaller depending on the height or width of the first transparent R3, and can be controlled so as to obtain a sufficient light condensing effect. In particular, according to the present invention, the radius of curvature of the convex lens 10.10 can be made smaller than before, so even if the distance between each optical sensor becomes narrower due to the miniaturization of CCDs, the radius of curvature of the lens can be made smaller accordingly, and sufficient A light condensing effect can be obtained. It has been confirmed that the sensitivity can actually be increased two to three times.
又、第１の透明層３及び第２の透明層９を仮にレジン等
の有機材料により形成した場合にはそれが高い温度で劣
化するので製造工程中あるいは製造後において劣化、特
性の変動等が生じる惧れがあるが、本発明においては、
第１の透明層及び第２の透明層を無機材料により形成す
るので第１の透明層及び第２の透明層が製造工程中ある
いは製造後において劣化したり、集光特性等の特性が変
動したりする慣れが全くない。Furthermore, if the first transparent layer 3 and the second transparent layer 9 are made of an organic material such as resin, it will deteriorate at high temperatures, so deterioration and changes in characteristics may occur during or after the manufacturing process. Although there is a possibility that this may occur, in the present invention,
Since the first transparent layer and the second transparent layer are formed of an inorganic material, there is no possibility that the first transparent layer and the second transparent layer will deteriorate during or after the manufacturing process, or that their characteristics such as light gathering characteristics will change. I'm not used to doing that at all.
発明の効果
以上に述べたように、本発明固体撮像装置の製造方法は
、固体撮像デバイスが形成された半導体基板上に無機材
料からなる第１の透明層を形成し、該第１の透明層に対
しそれが光センサの開口部上に残存するような選択的エ
ツチング処理を施し、その後、半導体基板上に無機材料
からなる第２の透明層を形成することにより各光センサ
の開１１部上に上記第２の透明層からなり上記開口部に
集光するレンズが構成されるようにすることを特徴とす
るものである。従って、各光センサの開口部上の第２の
透明層からなるレンズによって光センサからずれたとこ
ろに向う光も光センサの開口部に集光される。そして、
第１の透明層の高さ、幅等を変えることにより集光効果
が高まるようにレンズの曲率を制御することができ得る
。依って、光センサの感度を高め、実効的な開口率を高
くすることができる。Effects of the Invention As described above, the method for manufacturing a solid-state imaging device of the present invention includes forming a first transparent layer made of an inorganic material on a semiconductor substrate on which a solid-state imaging device is formed; A selective etching process is performed so that the etching remains on the openings of the optical sensors, and then a second transparent layer made of an inorganic material is formed on the semiconductor substrate. The invention is characterized in that a lens is formed of the second transparent layer and condenses light onto the opening. Therefore, the light directed away from the optical sensor is also focused on the opening of the optical sensor by the lens made of the second transparent layer above the opening of each optical sensor. and,
By changing the height, width, etc. of the first transparent layer, it may be possible to control the curvature of the lens so that the light gathering effect is enhanced. Therefore, the sensitivity of the optical sensor can be increased and the effective aperture ratio can be increased.
又、第１の透明層及び第２の透明層を無機材料により形
成するので高温で劣化したり、不良が発生したり、各種
特性が変動したりする惧れがなく、品質の安定性を高く
することができる。In addition, since the first transparent layer and the second transparent layer are formed of inorganic materials, there is no risk of deterioration at high temperatures, defects, or changes in various properties, and the quality is highly stable. can do.
第１図（Ａ）乃至（Ｃ）は本発明固体撮像装置の製造方
法の実施の一例を工程順に示す断面図、第２図は固体撮
像デバイスの従来例を示す断面図である。
符号の説明
ｌ・・・半導体基板、
３・番・第１の透明層、 ４・φφ光センサ、９・・・
第２の透明層、１０・舎・レンズ出 願 人 ソニー株
式会社
代理人弁理士 小 松 祐 治
回 尾 川 秀 昭
１
第１図
（Ａ）
ＣＢ＞
（Ｃ）FIGS. 1A to 1C are cross-sectional views showing, in order of steps, an example of the method for manufacturing a solid-state imaging device of the present invention, and FIG. 2 is a cross-sectional view showing a conventional example of a solid-state imaging device. Explanation of symbols: 1: Semiconductor substrate, 3: First transparent layer, 4: φφ optical sensor, 9:
Second transparent layer, 10/sha/lens Applicant: Sony Corporation Representative Patent Attorney Yuji Komatsu Hideo Ogawa 1997 Figure 1 (A) CB> (C)
Claims (1)
機材料からなる第１の透明層を形成し、該第１の透明層
に対しそれが光センサの開口部上に残存するような選択
的エツチング処理を施し、その後、半導体基板上に無機
材料からなる第２の透明層を形成することにより各光セ
ンサの開口部上に上記第２の透明層からなり上記開口部
に集光するレンズが構成されるようにすることを特徴と
する固体撮像装置の製造方法(1) A first transparent layer made of an inorganic material is formed on a semiconductor substrate on which a solid-state imaging device is formed, and a selective layer is formed on the first transparent layer so that it remains on the opening of the optical sensor. By performing an etching process and then forming a second transparent layer made of an inorganic material on the semiconductor substrate, a lens made of the second transparent layer is formed on the opening of each optical sensor and focuses light on the opening. A method for manufacturing a solid-state imaging device, characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59118090A JPS60262458A (en) | 1984-06-11 | 1984-06-11 | Manufacture of solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59118090A JPS60262458A (en) | 1984-06-11 | 1984-06-11 | Manufacture of solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60262458A true JPS60262458A (en) | 1985-12-25 |
Family
ID=14727744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59118090A Pending JPS60262458A (en) | 1984-06-11 | 1984-06-11 | Manufacture of solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60262458A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100382723B1 (en) * | 2000-11-13 | 2003-05-09 | 삼성전자주식회사 | Solid state image sensor and manufacturing method thereof |
| US6903395B2 (en) | 2002-02-05 | 2005-06-07 | Sharp Kabushiki Kaisha | Semiconductor device including interlayer lens |
| KR20080062141A (en) * | 2006-12-29 | 2008-07-03 | 동부일렉트로닉스 주식회사 | Microlens in cmos image sensor and method of forming the same |
| JP2009157397A (en) * | 2009-04-13 | 2009-07-16 | Sony Corp | Method for manufacturing solid image pickup device and solid image pickup device |
| US8253142B1 (en) * | 1999-08-27 | 2012-08-28 | Sony Corporation | Solid-state imaging device and method of fabricating the same |
| US9030744B2 (en) | 2011-09-19 | 2015-05-12 | Infineon Technologies Ag | Fabrication of micro lenses |
-
1984
- 1984-06-11 JP JP59118090A patent/JPS60262458A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8253142B1 (en) * | 1999-08-27 | 2012-08-28 | Sony Corporation | Solid-state imaging device and method of fabricating the same |
| US8729650B2 (en) | 1999-08-27 | 2014-05-20 | Sony Corporation | Solid-state imaging device and method of fabricating the same |
| KR100382723B1 (en) * | 2000-11-13 | 2003-05-09 | 삼성전자주식회사 | Solid state image sensor and manufacturing method thereof |
| US6605851B2 (en) | 2000-11-13 | 2003-08-12 | Samsung Electronics Co., Ltd. | Image sensor with large radius micro-lenses |
| US6933161B2 (en) | 2000-11-13 | 2005-08-23 | Samsung Electronics, Co., Ltd. | Method of forming an image sensor with large radius micro-lenses |
| US6903395B2 (en) | 2002-02-05 | 2005-06-07 | Sharp Kabushiki Kaisha | Semiconductor device including interlayer lens |
| KR20080062141A (en) * | 2006-12-29 | 2008-07-03 | 동부일렉트로닉스 주식회사 | Microlens in cmos image sensor and method of forming the same |
| JP2009157397A (en) * | 2009-04-13 | 2009-07-16 | Sony Corp | Method for manufacturing solid image pickup device and solid image pickup device |
| US9030744B2 (en) | 2011-09-19 | 2015-05-12 | Infineon Technologies Ag | Fabrication of micro lenses |
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