JPS60249326A - Pattern formation - Google Patents
Pattern formationInfo
- Publication number
- JPS60249326A JPS60249326A JP59104526A JP10452684A JPS60249326A JP S60249326 A JPS60249326 A JP S60249326A JP 59104526 A JP59104526 A JP 59104526A JP 10452684 A JP10452684 A JP 10452684A JP S60249326 A JPS60249326 A JP S60249326A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- ladder
- photoresist
- oligomer
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はシリコーン樹脂のパターン形成に係り、特に、
複層レジスト工程の中間層もしくは下層として用いるに
好適な梯子型シリコーン系オリゴマーのパターン形成方
法に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to pattern formation of silicone resin, and in particular,
The present invention relates to a method for forming a pattern of a ladder-shaped silicone oligomer suitable for use as an intermediate layer or lower layer in a multilayer resist process.
シリコーン樹脂は通常の有機高分子樹脂と異なり、減圧
化の酸素プラズマ又は酸素スパッタ処理では完全に除去
できず、表面に樹脂の主成分である珪素と酸素が反応し
て二酸化珪素被膜が形成されると酸素との反応による蝕
刻は停止してしまう。Unlike ordinary organic polymer resins, silicone resins cannot be completely removed by reduced-pressure oxygen plasma or oxygen sputtering, and a silicon dioxide film is formed on the surface by the reaction between silicon, the main component of the resin, and oxygen. Erosion due to the reaction with oxygen stops.
このためシリコーン樹脂のドライエツチングには、通常
フレオン（Ｃ，Ｆ４．）あるいは三弗化炭化水素（ＣＨ
Ｆ３ ）などの弗化炭化水素（一般式： ＣＸ ＨＹ
ＦＺ ）と酸素の混合ガスプラズマが用いられている。For this reason, dry etching of silicone resins is usually done using freon (C, F4.) or trifluorocarbon (CH).
Fluorinated hydrocarbons (general formula: CX HY
A mixed gas plasma of FZ) and oxygen is used.
ところで、このシリコーン樹脂に所望のパターンを形成
するためにホトレジスト膜を形成しようとすると一般に
シリコーン樹脂は様々な有機溶媒に可溶なため、所望の
レジスト膜を得ることが不可能であった。ただし梯子型
シリコーン系オリゴマー膜を形成後、熱処理により三次
元架橋させた梯子型シリコーン系ポリマーの膜は有機溶
媒には不溶であるためこの膜上にホトレジストを塗布し
膜を形成することが可能である。しかしこの梯子型シリ
コーン系ポリマーの膜は、弗化炭化水素と酸素の混合ガ
スを用いたドライエツチングもしくは非酸素の蝕刻液を
用いたエツチング以外では除去することが難しく、この
膜を後で除去することが必要な、複層レジスト工程での
中間層あるいは下層あるいはリフトオフ工程でのりフト
オフ層として用いるには不適当であった。By the way, when attempting to form a photoresist film on this silicone resin to form a desired pattern, it has been impossible to obtain the desired resist film because silicone resin is generally soluble in various organic solvents. However, after forming the ladder-shaped silicone-based oligomer film, the ladder-shaped silicone-based polymer film is three-dimensionally cross-linked by heat treatment and is insoluble in organic solvents, so it is possible to form a film by applying photoresist on this film. be. However, this ladder-shaped silicone polymer film is difficult to remove except by dry etching using a mixed gas of fluorinated hydrocarbon and oxygen or etching using a non-oxygen etchant, and this film must be removed later. It was unsuitable for use as an intermediate layer or lower layer in a multi-layer resist process, or as a lift-off layer in a lift-off process, which requires the following.
本発明の目的は、ホトレジスト等を用いて蝕刻可能で、
かつ微細な所望のパターン形成が可能で、なおかつ不要
となった時点で容易にハク離することが可能な、シリコ
ーン系樹脂膜のパターン形成方法を与えるものである。The object of the present invention is to enable etching using photoresist or the like;
The present invention also provides a method for forming a pattern on a silicone resin film, which enables the formation of a fine, desired pattern, and which can be easily peeled off when no longer needed.
一般のシリコーン捌脂あるいは梯子型シリコーン系オリ
ゴマー上にホトレジストを塗布することを考えた時に、
上記のシリコーン系樹脂あるいは梯子型シリコーン系オ
リゴマーが減圧下での、例えば０．０１〜１０ｔｏｒｒ
での酸素プラズマにさらされると１表面が蝕刻され、構
成元素中の珪素のみが表面で酸化され、この酸化珪素膜
が表面をおおう状況になると蝕刻がとまってしまうこと
に着目した。すなわち、シリコーン系樹脂表面を、酸素
プラズマ処理することによりＳｉＯ□ （もしくはこれ
に類似の材料）に変え、このＳｉＯ□が有機溶媒に不溶
であることからこの上に、通常の有機溶媒により稀釈さ
れたレジスト材料を滴下２回転塗布することによりレジ
スト膜を形成できることを見出した。またこの表面を変
質させたシリコーン樹脂は、軽いフレオンプラズマ処理
、もしくは弗酸処理をした後に、有機溶媒に浸漬するこ
とによって容易に除去可能であった。またシリコーン系
の樹脂がフレオン（ＣＦ４）などの弗素を成分として含
むガスを用いた減圧下のプラズマを用いることにより蝕
刻可能であることからシリコーン系の樹脂をパターニン
グする際にホトレジストをマスクに用いＣＦ ４１ Ｃ
ＨＦ３ ＨＣ２Ｆ６ などの弗化炭素あるいは弗化炭化
水素ガスを含むガスを用いてリアクティブイオンエツチ
ングしたところ、容易な微細かつ寸法精度の高いエツチ
ングが可能であった。このエツチングに際しては必要に
応じて酸素を添加することが可能であり、これによりシ
リコーン系樹脂のエツチング速度は増大する傾向が認め
られた。しかしホトレジストの選択比が減少する傾向も
同時に認められた。When thinking about applying photoresist on a general silicone grease remover or a ladder-type silicone oligomer,
The above silicone resin or ladder-type silicone oligomer is
We focused on the fact that when exposed to oxygen plasma, one surface is etched, and only silicon among the constituent elements is oxidized on the surface, and when this silicon oxide film covers the surface, the etching stops. That is, the silicone resin surface is converted to SiO□ (or a similar material) by oxygen plasma treatment, and since this SiO□ is insoluble in organic solvents, it is diluted with a normal organic solvent. It has been found that a resist film can be formed by applying the resist material dropwise twice. Furthermore, the silicone resin whose surface had been altered could be easily removed by subjecting it to light Freon plasma treatment or hydrofluoric acid treatment and then immersing it in an organic solvent. Furthermore, since silicone resin can be etched by using plasma under reduced pressure using a gas containing fluorine such as Freon (CF4), photoresist is used as a mask when patterning silicone resin. 41C
When reactive ion etching was performed using a gas containing fluorocarbon or fluorinated hydrocarbon gas such as HF3 HC2F6, it was possible to easily perform fine etching with high dimensional accuracy. During this etching, it is possible to add oxygen if necessary, and it has been observed that this tends to increase the etching rate of the silicone resin. However, a tendency for the selectivity of photoresist to decrease was also observed at the same time.
以下実施例を説明する。 Examples will be described below.
実施例１ 第１図を用いて説明する。Example 1 This will be explained using FIG.
表面酸化したシリコーンウェーハ１０１上に、一般式
で表わされる、梯子型シリコーン系オリゴマー（オルガ
ノシル・セスキ・オキサンオリゴマー）のアセトン溶液
を回転塗布後、８０℃で乾燥し、約０．８ μｍの梯子
型シリコーン系樹脂オリゴマ膜１０３を得た。１０２は
酸化Ｓｉ膜である。この試料を減圧下（２ｔｏｒｒ）の
酸素プラズマ中に２分保持した後、ヘキサメチレンジア
ミン処理をしてから、この試料上にやはり回転塗布によ
り市販のホトレジスト（ＡＺ１３５０．Ｉ）膜１０４を
０．５ μｍの厚さに形成した。酸素プラズマ処理を行
なわなかった試料では、下の梯子型コリコーンオリゴマ
がホトレジストの溶剤に溶解する為に所望のレジスト膜
を得ることができなかった。この後、通常の露光により
レジストパターン１０５を得た。この試料を平行平板型
のドライエツチング装置によリ、ＣＦ４に２０％に酸素
を添加した反応ガスを用いて蝕刻した。所望のパターン
１０６を得た。On a silicone wafer 101 whose surface has been oxidized, an acetone solution of a ladder-shaped silicone oligomer (organosyl sesquioxane oligomer) represented by the general formula is spin-coated, and then dried at 80° C. to form a ladder of about 0.8 μm. A type silicone resin oligomer film 103 was obtained. 102 is a Si oxide film. After holding this sample in an oxygen plasma under reduced pressure (2 torr) for 2 minutes, it was treated with hexamethylene diamine, and then a commercially available photoresist (AZ1350.I) film 104 was coated on the sample by spin coating at a rate of 0.5 It was formed to a thickness of μm. In the sample that was not subjected to oxygen plasma treatment, the desired resist film could not be obtained because the lower ladder-shaped collicone oligomer was dissolved in the photoresist solvent. Thereafter, a resist pattern 105 was obtained by normal exposure. This sample was etched using a parallel plate type dry etching apparatus using a reaction gas containing CF4 with 20% oxygen added. A desired pattern 106 was obtained.
残存したホトレジストパターンは酸素を用いたりアクテ
ィブスパッタエツチングにより除去した。The remaining photoresist pattern was removed using oxygen or active sputter etching.
マスクとして用いたレジストパターン１０４の寸法と、
得られた梯子型シリコーン系オリゴマパターン１０５の
寸法の差は０．０５ μｍ以下であった。別に測定した
上記レジストを梯子型シリコーン系オリゴマーのエツチ
ング速度比は概略１：５程度であった。なおこの後に稀
弗酸処理あるいは所謂フレオンプラズマ処理をした後、
アセトンに浸漬したところ、該梯子型シリコーン系オリ
ゴマーのパターン１０５は完全に溶解除去できた。Dimensions of the resist pattern 104 used as a mask,
The difference in dimension of the obtained ladder-shaped silicone oligomer pattern 105 was 0.05 μm or less. The etching rate ratio of the resist to the ladder-type silicone oligomer, which was measured separately, was approximately 1:5. After this, after performing dilute hydrofluoric acid treatment or so-called Freon plasma treatment,
When immersed in acetone, the ladder-shaped silicone oligomer pattern 105 could be completely dissolved and removed.
上記実施例１では梯子型シリコーン系オリゴマのエツチ
ングにＣＦ４−２０％ｏ２を用いたが、ＣＦ ４の代わ
りにＣＨＦ３ ｅ Ｃ２Ｆｅ ｔ Ｃ３ＦＩＴ ｔ Ｃ
４Ｆｅ等を用いても同様に梯子シリコーン系オリゴマの
蝕刻が可能であった。また、弗化炭化水素に対する酸素
の混合比も２０％に限定されるものではなく、酸素を全
く混合しない場合を含めて、酸素混合比Ｏ〜５０％で実
質的に梯子型シリコーン系オリゴマーの蝕刻が可能であ
った。In the above Example 1, CF4-20% O2 was used for etching the ladder-shaped silicone oligomer, but CHF3 e C2Fe t C3FIT t C was used instead of CF 4.
It was also possible to etch ladder silicone oligomers using 4Fe and the like. Furthermore, the mixing ratio of oxygen to fluorinated hydrocarbon is not limited to 20%, and even when no oxygen is mixed at all, an oxygen mixing ratio of 0 to 50% will substantially etch the ladder-shaped silicone oligomer. was possible.
実施例２ 第２図を用いて説明する。Example 2 This will be explained using FIG.
厚さ１．５ μｍのポリイミド系の樹脂であるポリイミ
ドイソインドロキナゾリン樹脂（以下ＰＩＩと略記する
）膜２０２を形成したシリコンウェーハ２０１上に実施
例１の方法を用いて厚さ０．５ μｍの梯子型シリコー
ン系オリゴマーの所望形状のパターン２０３を形成した
。このパターン２０３を用いて、酸素を反応ガスとして
用いるリアクティブスパッタエツチングによりＰＩＩ膜
２０１を蝕刻した。フレオンプラズマ処理の後に、アセ
トンに浸漬し梯子型シリコーン系オリゴマーのパターン
２０３を除去し、ＰＩＩのパターン２０４を得た。レジ
ストとＰＩＩのパターンの寸法差はやはり０．０５ μ
ｍ以下であった。Using the method of Example 1, a film of 0.5 μm thick was formed on a silicon wafer 201 on which a polyimide isoindoroquinazoline resin (hereinafter abbreviated as PII) film 202, which is a polyimide-based resin, was formed with a thickness of 1.5 μm. A pattern 203 of a desired shape of ladder-shaped silicone oligomer was formed. Using this pattern 203, the PII film 201 was etched by reactive sputter etching using oxygen as a reactive gas. After Freon plasma treatment, the ladder-shaped silicone oligomer pattern 203 was removed by immersion in acetone to obtain a PII pattern 204. The dimensional difference between the resist and PII patterns is still 0.05 μ.
m or less.
実施例３ 第３図を用いて説明する。Example 3 This will be explained using FIG.
厚さ１μｍのへΩ膜（３０３）を形成した熱酸化シリコ
ーンウェーハ３０１上に、実施例１と同様の方法で厚さ
２μｍの梯子型シリコーン系オリゴマーのパターン３０
４を形成しこれをマスクに。A ladder-shaped silicone oligomer pattern 30 with a thickness of 2 μm was formed on a thermally oxidized silicone wafer 301 on which a HeΩ film (303) with a thickness of 1 μm was formed in the same manner as in Example 1.
Form 4 and use this as a mask.
塩素系ガスを反応ガスとして用いてリアクティブスパッ
タエツチングを行なった。ＡＩ２のエツチング後、Ｓｉ
残渣処理を兼ねてフレオンプラズマ処理をした後、アセ
トンに浸漬し、梯子型シリコーン系オリゴマーのパター
ン３０４を除去し、所望のＡΩパターン３０５を得た。Reactive sputter etching was performed using chlorine-based gas as a reactive gas. After etching AI2, Si
After Freon plasma treatment which also served as a residue treatment, it was immersed in acetone to remove the ladder-shaped silicone oligomer pattern 304 to obtain a desired AΩ pattern 305.
ホトレジストマスクとＡｆｌパターンは寸法差は０．１
μｍ以下であった。The dimensional difference between the photoresist mask and the Afl pattern is 0.1
It was less than μm.
実施例４ 第４図を用いて説明する。Example 4 This will be explained using FIG.
厚さ０．５ μｍのＷ膜４０３を形成した熱酸化シリコ
ーンウェーハ４０１上に、実施例１と同様の方法で厚さ
１μｍの梯子型シリコーン系オリゴマーパターン４０４
を形成した。これをマスクに弗素系ガスを反応ガスとし
て用いるリアクティブスパッタエツチングを行なった。A ladder-shaped silicone oligomer pattern 404 with a thickness of 1 μm is formed on a thermally oxidized silicone wafer 401 on which a W film 403 with a thickness of 0.5 μm is formed in the same manner as in Example 1.
was formed. Using this as a mask, reactive sputter etching was performed using fluorine gas as a reactive gas.
Ｗのエツチング後アセトンに浸漬し梯子型シリコーンオ
リゴマーパターン４０４を除去し、Ｗのパターン４０５
を得た。ホトレジストパターンとＷパターンの寸法差は
０．１ μｍ以下であった。After etching the W, the ladder-shaped silicone oligomer pattern 404 is removed by immersion in acetone, and the W pattern 405 is removed.
I got it. The dimensional difference between the photoresist pattern and the W pattern was 0.1 μm or less.
実施例５ 第５図を用いて説明する。Example 5 This will be explained using FIG.
シリコーンウェーハ５０１上にホトレジスト（商品名Ａ
Ｚ１３５０Ｊ ） ５０２を回転塗布し１３０℃でベー
ク乾燥させ２μｍの厚さに形成した後、さらに梯子型シ
リコーン系オリゴマーのキシレン溶液を回転塗布し、０
．４ μｍの梯子型シリコーン系オリゴマー膜５０３を
形成した。この試料を５しｏｒｒの酸素ガス雰囲気中で
酸素プラズマにさらした後再度ホトレジスト（ＡＺ１３
５０Ｊ ）を塗布し通常のブリベータ、露光、現像処理
を経て厚さ０．６μｍのホトレジストパターン５０４を
得た。Photoresist (product name A) on the silicone wafer 501
After spin-coating Z1350J) 502 and baking drying at 130°C to form a 2 μm thick layer, a xylene solution of ladder-shaped silicone oligomer was further spin-coated, and 0.
．． A 4 μm ladder-shaped silicone oligomer film 503 was formed. After exposing this sample to oxygen plasma in an oxygen gas atmosphere of 5 orr, photoresist (AZ13) was applied again.
A photoresist pattern 504 having a thickness of 0.6 μm was obtained by applying a photoresist pattern 504 (50J) and carrying out the usual blivator, exposure and development processes.
１００℃でポストベークした後、ＣＨＦ３ ＋０２の混
合ガスを用いたりアクティブスパッタエツチングにより
梯子型シリコン系オリゴマーのパターン５０５を形成し
た後、酸素を用いたりアクティブスパッタエツチングに
よりホトレジストのパターン５０６を形成した。フレオ
ンプラズマ処理（ＣＦ４＋４％０２．１ｔｏｒｒ）をし
た後キシレンに浸漬したところ梯子型シリコーン系オリ
ゴマーのパターンは溶解し、ホトレジストのパターンの
みを得ることが可能であった。またこのホトレジストパ
ターンは表面を酸素プラズマ処理することによって容易
にホトレジストはく離液で除去することが可能であり、
またあるいはアセトンに浸漬して超音波を印加すること
によっても除去することが可能であった。また、梯子型
シリコーン系オリゴマ（５０５）とホトレジスト（５０
６）の積層パターンのままでも、ホトレジストはく離液
あるいは、ホトレジスト材料の溶剤によって除去するこ
とが可能であった。After post-baking at 100° C., a ladder-shaped silicon oligomer pattern 505 was formed using a mixed gas of CHF3+02 or by active sputter etching, and then a photoresist pattern 506 was formed using oxygen or by active sputter etching. When it was immersed in xylene after Freon plasma treatment (CF4+4% 02.1 torr), the ladder-shaped silicone oligomer pattern was dissolved, and it was possible to obtain only the photoresist pattern. In addition, this photoresist pattern can be easily removed with a photoresist stripper by treating the surface with oxygen plasma.
Alternatively, it was possible to remove it by immersing it in acetone and applying ultrasonic waves. In addition, ladder-shaped silicone oligomer (505) and photoresist (50
Even with the laminated pattern 6) intact, it was possible to remove it using a photoresist stripping solution or a solvent for the photoresist material.
以上述べて来たように、梯子型シリコン系オリゴマーは
酸素プラズマ処理により容易に表面が変質し１表面層の
みが有機溶剤に不溶となり、この上に有機溶剤に溶かし
たホトレジストを塗布することが可能になり通常のホト
レジストプロセスを経ることができるようになる。しか
もこの変質層は弗酸あるいはフレオン処理により容易に
除去されて、残存層は有機溶媒に再び可溶となる。また
実施側の中では述べなかったが、オリゴマー分の濃度を
適切にすることにより、下地に段差があった場合にも表
面が平らになるように塗布することが可能である。また
、必要に応じて種々の顔料を添加して塗布することも容
易であり、複層レジスト、例えば２層レジスト工程の下
地層、あるいは３層レジストプロセスの中間層として使
用することにより、下地に段差があった場合でも寸法変
換差の少ないパターンを形成することが容易に可能とな
る。As mentioned above, the surface of ladder-shaped silicon-based oligomers is easily altered by oxygen plasma treatment, and only one surface layer becomes insoluble in organic solvents, making it possible to coat photoresist dissolved in organic solvents on top of this. This makes it possible to go through the normal photoresist process. Furthermore, this altered layer is easily removed by hydrofluoric acid or Freon treatment, and the remaining layer becomes soluble again in an organic solvent. Furthermore, although it was not mentioned in the implementation section, by adjusting the concentration of the oligomer component appropriately, it is possible to apply the coating so that the surface is flat even if there is a step on the base. In addition, it is easy to add and apply various pigments as needed, and it can be used as a base layer in a multilayer resist, for example, a two-layer resist process, or as an intermediate layer in a three-layer resist process. Even if there is a step difference, it is possible to easily form a pattern with a small difference in dimension conversion.
第１図は、梯子型シリコーン系オリゴマーにパターンを
形成する工程を表わす図、第２図〜第５図は梯子型シリ
コーン系オリゴマーパターンを用いて各々ポリイミド系
樹脂、ＡＱ、Ｗ、ホトレジスト材料のパターンを形成す
る工程、を示す図である。
１０１．２０１，３０１，４０１，５０１・・Ｓｉ基板
、２０２，３０２，４０２・・・ＳｉＱ□、１０３゜５
０３・・・梯子型シリコーン系オリゴマー膜、１０４・
・・ホトレジスト、１０５，５０４，５０５・ホトレジ
ストパターン、１０５，２０３゜３０４．４０４，５０
５・・・梯子型シリコーン系オリゴマーパターン、３０
３・・・ＡＱ膜、３０５・・・Ａｆｌパターン、４０３
・・・Ｗ膜、４０５・・・Ｗノ（ターン。
第 １ 口
第 ３ 目
第 ５ 目Figure 1 is a diagram showing the process of forming a pattern on a ladder-shaped silicone oligomer, and Figures 2 to 5 are patterns of polyimide resin, AQ, W, and photoresist materials using the ladder-type silicone oligomer pattern, respectively. It is a figure which shows the process of forming. 101.201,301,401,501...Si substrate, 202,302,402...SiQ□, 103°5
03...Ladder type silicone oligomer film, 104...
・Photoresist, 105,504,505・Photoresist pattern, 105,203°304.404,50
5...Ladder-shaped silicone oligomer pattern, 30
3...AQ film, 305...Afl pattern, 403
...W film, 405...W (turn. 1st mouth 3rd eye 5th eye
Claims (1)
をマスクとして蝕刻し、所望のパターンを形成する際に
、レジスト材料の塗布前に、該シリコーン樹脂表面を減
圧下で酸素プラズマ処理する工程を含むことを特徴とす
るパターン形成方法。 ２、上記シリコーン樹脂の蝕刻をＣＸＨ，Ｆ２の一般式
で表わされる弗化炭化水素もしくは弗化炭、１（ｙ＝ｏ
の場合）を含む反応ガスを用いてリアクティブスパッタ
エツチングにより行なう特許請求の範囲第１項記載のパ
ターン形成方法。 ３、上記反応ガスとして弗化炭化水素あるいは弗化炭素
と酸素の混合ガスを用いる特許請求の範囲第２項記載の
パターン形成方法。 ４、上記シリ−コン樹脂が梯子型シリコ−、ン系オリゴ
マーである特許請求の範囲第１項、第２項および第３項
のいずれかに記載のパターン形成方法。[Claims] 1. When etching the silicone resin formed on the substrate using photoresist as a mask to form a desired pattern, the surface of the silicone resin is exposed to oxygen plasma under reduced pressure before applying the resist material. A pattern forming method comprising the step of processing. 2. The above silicone resin is etched using a fluorinated hydrocarbon or fluorinated carbon represented by the general formula of CXH, F2, 1 (y=o
2. The pattern forming method according to claim 1, wherein the pattern forming method is carried out by reactive sputter etching using a reactive gas containing the following: 3. The pattern forming method according to claim 2, wherein the reactive gas is a fluorinated hydrocarbon or a mixed gas of fluorinated carbon and oxygen. 4. The pattern forming method according to any one of claims 1, 2 and 3, wherein the silicone resin is a ladder-type silicone oligomer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59104526A JPS60249326A (en) | 1984-05-25 | 1984-05-25 | Pattern formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59104526A JPS60249326A (en) | 1984-05-25 | 1984-05-25 | Pattern formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60249326A true JPS60249326A (en) | 1985-12-10 |
Family
ID=14382932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59104526A Pending JPS60249326A (en) | 1984-05-25 | 1984-05-25 | Pattern formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60249326A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5023204A (en) * | 1988-01-21 | 1991-06-11 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device using silicone protective layer |
-
1984
- 1984-05-25 JP JP59104526A patent/JPS60249326A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5023204A (en) * | 1988-01-21 | 1991-06-11 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device using silicone protective layer |
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