JPS60213804A - Light position detector utilizing semiconductor device - Google Patents
Light position detector utilizing semiconductor deviceInfo
- Publication number
- JPS60213804A JPS60213804A JP59069596A JP6959684A JPS60213804A JP S60213804 A JPS60213804 A JP S60213804A JP 59069596 A JP59069596 A JP 59069596A JP 6959684 A JP6959684 A JP 6959684A JP S60213804 A JPS60213804 A JP S60213804A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photodiode
- output
- wavelength
- incident
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Measurement Of Optical Distance (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置検出器（以下Ｐ８Ｄと称す）Ｋ関し
、特に外光によるＰＡＤの飽和対策に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device detector (hereinafter referred to as P8D) K, and particularly to countermeasures against saturation of PAD due to external light.
従来、Ｐ８Ｄは特開昭５８−８７５４３号公報にても知
られている構造となっており、鋏公報にても示されるよ
うに被写体に投射された信号光の、被写体による反射光
を受光することに位動、カメ２と被写体までの距離を決
定するカメラの測距装置に用いられることが多いが、外
光が被写体からの反射光よりも極端に強いとＰ８Ｄの出
力が飽和したり、Ｐ８Ｄの出力のうち被写体からの反射
光成分の割合が外光成分の割合に対して極端−小さくな
り、被写体からの反射光成分の検出が難かしくなるとい
う欠点があった。Conventionally, the P8D has a structure known from Japanese Unexamined Patent Publication No. 58-87543, and as shown in the Scissors publication, it receives the signal light projected onto the subject and the reflected light by the subject. It is often used in camera distance measuring devices to determine the position and distance between the camera 2 and the subject, but if the outside light is extremely stronger than the light reflected from the subject, the output of the P8D may become saturated. There is a drawback that the proportion of the reflected light component from the subject in the output of the P8D is extremely small compared to the proportion of the external light component, making it difficult to detect the reflected light component from the subject.
本発明はこの点に鑑みてなされたものであり、上述の欠
点を解消せんとするものである。The present invention has been made in view of this point and aims to eliminate the above-mentioned drawbacks.
次に図面を用いて本発明を詳述する。第１図はＰ８Ｄの
等価回路であり、ＰＡＤは第１図に示したように分布抵
抗１中にフォトダイオード２を分布させたものと考える
ことができる。Next, the present invention will be explained in detail using the drawings. FIG. 1 is an equivalent circuit of P8D, and PAD can be thought of as having photodiodes 2 distributed within distributed resistance 1 as shown in FIG.
本発明は、第２図のように分布抵抗１に対してフォトダ
イオード２．６を逆直列に接続したもの。In the present invention, a photodiode 2.6 is connected in anti-series to a distributed resistor 1 as shown in FIG.
である。It is.
ここでフォトダイオード２に対しては特定波長以外の光
を与え、フォトダイオード３に対しては波長を特定しな
い光を与える。Here, light having a wavelength other than a specific wavelength is applied to the photodiode 2, and light having an unspecified wavelength is applied to the photodiode 3.
この様にすることにより、特定波長以外の光の成分につ
いてはフォトダイオード２，６の出力によって相殺され
端子４３．４’にはその出力が発生せず、特定波長の光
の受光位置にはフォトダイオード２，６の出力に不均衡
が生じて端子４ 、４’に信号が出力される。By doing this, components of light other than the specific wavelength are canceled out by the outputs of the photodiodes 2 and 6, so that the output is not generated at the terminal 43.4', and there is no photo at the receiving position of the light of the specific wavelength. An imbalance occurs in the outputs of the diodes 2 and 6, and signals are output to the terminals 4 and 4'.
例えば第２図に示したフォトダイオード２，３の上方に
被写体の反射光が入射すれに１分布抵抗１により端子４
から出力される電流に比べ端子５から出力される電流が
大きくなる。この電流値は特定波長の光の受光位置に相
応して変化するため、光点位置検出が可能となる。For example, when the reflected light from the object is incident above the photodiodes 2 and 3 shown in FIG.
The current output from terminal 5 is larger than the current output from terminal 5. Since this current value changes in accordance with the receiving position of light of a specific wavelength, it is possible to detect the position of a light spot.
第６図は第２図に示した本発明の原理に基づいて構成し
た本発明の一実施例の回路図である０第５図において、
６はパルスジェネレータで抵抗７を介してＬＥＤ８に出
力を加えることにより特定波長のパルス光９を発生させ
る。１０はパルス光９の不図示の被写体による反射光で
ある。１１は波長選択器で反射光１０における特定波長
をカットした光と波長を特定しない光との２つに分割す
る。１２．１５はオペアンプで、それぞれ抵抗１４．１
５により電流−電圧変換を行い、差動増幅器１６に電圧
信号を出力する０従って差動増幅器１６の出力はＰＳＤ
の光位置に相当する信号となる。FIG. 6 is a circuit diagram of an embodiment of the present invention constructed based on the principle of the present invention shown in FIG.
A pulse generator 6 generates pulsed light 9 of a specific wavelength by applying an output to an LED 8 via a resistor 7. Reference numeral 10 indicates light reflected from the pulsed light 9 by an object (not shown). Reference numeral 11 denotes a wavelength selector which divides the reflected light 10 into two parts: light with a specific wavelength cut off, and light without a specific wavelength. 12.15 is an operational amplifier, and each resistor 14.1
5 performs current-voltage conversion and outputs a voltage signal to the differential amplifier 16. 0 Therefore, the output of the differential amplifier 16 is PSD.
The signal corresponds to the optical position of .
１７はサンプルホールド回路でパルスジェネレータ６の
出力に同期してオンオフして、ＬＥＤ８の点灯時のみ信
号を記憶するものである。１８は差動増幅器で差動増幅
器１６のＬＥＤの点灯時、非点灯時の差の信号を出力す
る。１９はメータで差動増幅器１８の出力を表示する。Reference numeral 17 denotes a sample and hold circuit which is turned on and off in synchronization with the output of the pulse generator 6 and stores a signal only when the LED 8 is lit. A differential amplifier 18 outputs a difference signal between when the LED of the differential amplifier 16 is lit and when it is not lit. A meter 19 displays the output of the differential amplifier 18.
以上のように構成された本発明の実施例の動作について
説明する。The operation of the embodiment of the present invention configured as above will be explained.
パルスジェネレータ６の発生するパルスに同期してＬＥ
Ｄ８が被写体に％定波長のパルス光９を投射する。不図
示の被写体によるパルス光９の反射光１０は波長選択器
１１により分割されフォトダイオード２，３に入射する
。フォトダイオード２．３により発生した信号は端子４
．４／から出力され、該端子から出力される電流が反射
光１０の光点位置の変化に応じて変化する。LE in synchronization with the pulse generated by the pulse generator 6
D8 projects pulsed light 9 with a constant wavelength onto the subject. Reflected light 10 of pulsed light 9 from an object (not shown) is split by a wavelength selector 11 and enters photodiodes 2 and 3. The signal generated by photodiode 2.3 is connected to terminal 4
．． 4/, and the current output from this terminal changes according to the change in the light spot position of the reflected light 10.
端子４．４′から出力される出力電流は１２．１３のオ
ペアンプで電圧に変換され、差動増幅器１６に出力され
る。従って該差動増幅器１６は端子４゜４′から出力さ
れる信号の差を出力することになる。The output current outputted from the terminal 4.4' is converted into a voltage by an operational amplifier 12.13 and outputted to the differential amplifier 16. Therefore, the differential amplifier 16 outputs the difference between the signals output from the terminals 4.about.4'.
差動増幅器１６の出力のうち、ＬＥＤ８の投光時の出力
はサンプルホールド回路１７により記憶され、差動増幅
器１８により差動増幅器１６の出力の点灯時、非点灯時
の差の信号として、メータ１９ｔＣ出力されることＫな
る。従って、特定波長成分のうち反射光１０によるもの
だけがメータに出力され、外光成分の特定波長成分はキ
ャンセルされる。Among the outputs of the differential amplifier 16, the output when the LED 8 emits light is stored in the sample hold circuit 17, and the differential amplifier 18 outputs the output of the differential amplifier 16 as a signal of the difference between when the output is lit and when it is not lit. 19tC will be output. Therefore, only the reflected light 10 of the specific wavelength components is output to the meter, and the specific wavelength components of the external light components are canceled.
本実施例における波長選択器はフィルターや回折格子や
プリズムを用いたものが含まれる。又、フォトダイオー
ド２，６のセンサー自身に波長選択性を持たしたり、２
．３のセンサーを層構造とすることも容易である。The wavelength selector in this embodiment includes one using a filter, a diffraction grating, or a prism. In addition, the sensors of photodiodes 2 and 6 may have wavelength selectivity, or
．． It is also easy to form the sensor No. 3 into a layered structure.
第４図は第６図に示したフォトダイオード２゜６の接続
の別の実施例を示したものである。第４図に示した実施
例ではダイオード２’、５１ヲ直列に接続し、第４図中
の矢印で示したループ電流を流すことにより、フォトダ
イオード２，６の出力とフォトダイオード２１．５’の
出力との差に相当する成分のみを出力するように構成し
ている。FIG. 4 shows another embodiment of the connection of the photodiodes 2.6 shown in FIG. In the embodiment shown in FIG. 4, the diodes 2' and 51 are connected in series and a loop current shown by the arrow in FIG. 4 is caused to flow between the outputs of the photodiodes 2 and 6 and the photodiode 21. The configuration is such that only the component corresponding to the difference from the output of is output.
第５図は第２図に示したフォトダイオード２゜３を構成
した半導体の断面図である。FIG. 5 is a sectional view of a semiconductor forming the photodiode 2.3 shown in FIG.
第５図においてはγ、６“Ｋ示した部分が第２図に示し
たフォトダイオード２．３に相当する。In FIG. 5, the portion indicated by γ, 6"K corresponds to the photodiode 2.3 shown in FIG. 2.
以上の如く本発明に依れと１フオトダイオードから成り
入射光の位置に応じて相反する２つの信号を出力する半
導体装置検出器におい七、前記 □フォトダイオードの
出力を打ち消すように接続された第２のフォトダイオー
ドを具備させ、入射光を波長により分割して前記フォト
ダイオード、第２のフォトダイオードに入射させたので
、入射光の特定波長の入射位置に相応した信号を出力さ
せることができ、外光成分による飽和も防ぐことができ
効果大なるものである。As described above, according to the present invention, in a semiconductor device detector which is composed of one photodiode and outputs two contradictory signals depending on the position of incident light, the semiconductor device detector includes a second photodiode connected to cancel the output of the photodiode. Since the present invention is equipped with two photodiodes, and the incident light is divided by wavelength and made incident on the photodiode and the second photodiode, it is possible to output a signal corresponding to the incident position of the specific wavelength of the incident light, This is highly effective as saturation due to external light components can also be prevented.
第１図はＰＳＤの等価回路を示す図、第２図は本発明の
詳細な説明図、第６図は本発明の一実施例の回路図、第
４図は第６図に示したフォトダイオード２，５の接続の
別の実施例を示す図、第５図は第２図に示したフォトダ
イオード２，６を構成した半導体の断面図である。
１・・・分布抵抗
２．６・・・フォトダイオード
４．４１・一端子
第３図FIG. 1 is a diagram showing an equivalent circuit of a PSD, FIG. 2 is a detailed explanatory diagram of the present invention, FIG. 6 is a circuit diagram of an embodiment of the present invention, and FIG. 4 is a photodiode shown in FIG. 6. FIG. 5 is a sectional view of a semiconductor forming the photodiodes 2 and 6 shown in FIG. 2. 1...Distributed resistance 2.6...Photodiode 4.41/One terminal Figure 3
Claims (1)
る２つの信号を出力する半導体装置検出器において、前
記フォトダイオードの出力を打■ ち消すように接続さ
れた第２のフォトダイオード’ 、ｋＡｍＬ、、いおヵ
□□よ、□い□ツォ□ トダイオード、第２のフォトダイオードに入射させるこ
とにより入射光の特定波長の入射位置に相応した信号を
出力する半導体装置検出器。[Scope of Claims] In a semiconductor device detector comprising a photodiode and outputting two contradictory signals depending on the position of incident light, a second photodiode is connected to cancel the output of the photodiode. A semiconductor device detector that outputs a signal corresponding to the incident position of a specific wavelength of incident light by making it incident on a second photodiode. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59069596A JPS60213804A (en) | 1984-04-06 | 1984-04-06 | Light position detector utilizing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59069596A JPS60213804A (en) | 1984-04-06 | 1984-04-06 | Light position detector utilizing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60213804A true JPS60213804A (en) | 1985-10-26 |
Family
ID=13407368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59069596A Pending JPS60213804A (en) | 1984-04-06 | 1984-04-06 | Light position detector utilizing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60213804A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2586366A1 (en) * | 2010-06-24 | 2013-05-01 | Pioneer Corporation | Photo-detection device and fluid measurement device |
-
1984
- 1984-04-06 JP JP59069596A patent/JPS60213804A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2586366A1 (en) * | 2010-06-24 | 2013-05-01 | Pioneer Corporation | Photo-detection device and fluid measurement device |
| EP2586366A4 (en) * | 2010-06-24 | 2014-06-11 | Pioneer Corp | Photo-detection device and fluid measurement device |
| US9237856B2 (en) | 2010-06-24 | 2016-01-19 | Pioneer Corporation | Light detecting apparatus and fluid measuring apparatus |
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