JPS60213025A - Application of resist - Google Patents
Application of resistInfo
- Publication number
- JPS60213025A JPS60213025A JP7046484A JP7046484A JPS60213025A JP S60213025 A JPS60213025 A JP S60213025A JP 7046484 A JP7046484 A JP 7046484A JP 7046484 A JP7046484 A JP 7046484A JP S60213025 A JPS60213025 A JP S60213025A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- coated
- electron beam
- chrome film
- hmds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Abstract
Description
【発明の詳細な説明】
イ）産業上の利用分野
本発明は、ホトレジストもしくは感電子線レジストを被
塗布面に塗布するためのレジスト重布方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a resist coating method for applying a photoresist or an electron beam sensitive resist to a surface to be coated.
口）従来技術
レジストには、ポジタイプのものとネガタイプのものが
あるが、このうち、ポジタイプは液中布面との接着性に
問題があるため、通常はネガタイプがよく用いられてい
た。特に、被塗布面に金属膜が形成されているときには
、ポジタイプの接着性祉著しく劣っていた。ところが、
解像度は、ネガタイプに比してポジタイプの方が勝つ℃
いるために、超ＬＳＩの製造に用いられるマスク等の作
製にあたつては、ポジタイプの使用が望まれ℃いる。そ
こで、被塗布面に接着促進剤を塗布する工程が採られて
いるが、これでは十分な効果を発揮することができなか
った。A) Prior art resists include positive type resists and negative type resists, but among these, the negative type has been commonly used because the positive type has a problem in adhesion to the cloth surface in liquid. In particular, when a metal film was formed on the surface to be coated, the adhesive properties of the positive type were significantly inferior. However,
In terms of resolution, positive type is better than negative type.℃
Therefore, it is desirable to use a positive type when manufacturing masks and the like used in the manufacture of VLSIs. Therefore, a step of applying an adhesion promoter to the surface to be coated has been adopted, but this method has not been able to exhibit sufficient effects.
ハ）発明の目的
本発明は、高解像度を持つポジタイプのレジストを被塗
布面に塗布するにあたって、これらの間の接着性を向上
させることを目的とする。c) Purpose of the Invention The object of the present invention is to improve the adhesion between positive type resists having high resolution when they are applied to a surface to be coated.
ニ）発明の構成
本発明曇ユ、まず、波型イ１１面を酸素プラズマで処理
する工程と、このＩｉ！！ｌ理の置に、前記被塗布面に
ヘキサメチルジシラザン（ＨＭＤＳ）等のレジスト接着
促進剤をコートする工程と、この後に、前記被塗布面に
ホトレジストもしくは感電子線レジストを塗布する工程
と、を含むことを特徴とするレジスト塗１５方法である
。D) Structure of the Invention The present invention begins with the process of treating the 11 surfaces of the waveform A with oxygen plasma, and this Ii! ! a step of coating the surface to be coated with a resist adhesion promoter such as hexamethyldisilazane (HMDS), and then a step of coating the surface to be coated with a photoresist or an electron beam-sensitive resist; 15 is a resist coating method characterized by including:
ホ）実施例
本発明の一実施例を以下に説明するが、ここでは、ホト
マスクの作製について、−条併きにして順次に述べる。E) Example An example of the present invention will be described below. Here, the fabrication of a photomask will be described in sequence, including the -stripes.
１）まず、ガラス基板の一主面に、クロム（Ｏｒ）膜を
８０００Ａの厚みで形成する。1) First, a chromium (Or) film with a thickness of 8000 Å is formed on one main surface of a glass substrate.
Ｂ） 次＜、 １ ｏパスカル、５０ワツトの酸素プラ
ズマで、前記クロム膜の表ＩｆｉｋＳ分間たたいてやっ
て、この表面を致細な凹凸を有するざらざらの状態にす
ると同時に、クロム膜の表面を酸化サセテ、酸化りｏム
（Ｏｒ１０５）ｔ−形成し、ここから水分を除去する。B) The surface of the chromium film is pounded with an oxygen plasma of 1 Pascal and 50 Watts for a minute to make the surface rough with minute irregularities, and at the same time, the surface of the chromium film is An oxidized saccharide, oxidized oxide (Or105), is formed, and water is removed from it.
ｆｆ１）次に、接着促進剤としてのへキサメチルジシラ
ザン（以下は、）ＩＭＤＢと祢す。）が５０ｍ１！入れ
られたと一カが載置されたデシケータの中に、前記ガラ
ス基板を放置し℃、クロム膜の上にＨＭＤ８ｔ−積層さ
せる。このとき、ＨＭＤＳは水酸（ＯＨ）基などの親水
晟を捕獲して、被塗布面としてのクロム膜の接着性を向
上させる。ff1) Next, hexamethyldisilazane (hereinafter referred to as ) IMDB is used as an adhesion promoter. ) is 50m1! The glass substrate was left in a desiccator in which the glass substrate was placed, and the HMD 8t was laminated on the chromium film at 0.degree. At this time, HMDS captures hydrophilic groups such as hydroxyl (OH) groups and improves the adhesion of the chromium film as the surface to be coated.
■）次に、クロム膜の上にＩ（ＭＤＳｔ−介してホシタ
イブの感電子線レジストをスピンコードしてから、ガラ
ス基板を１４０°０で６０分間プリベークして、５００
０Ａの厚みを有“（−る感区千線レジスト膜を形成する
。(2) Next, after spin-coding a Hositaib electron beam resist through I (MDSt-) on the chromium film, prebaking the glass substrate at 140°0 for 60 minutes,
A sensitive area 1,000-line resist film with a thickness of 0A is formed.
■）次に、ｉｔ子ビーム露光装置によって、前記感電子
線レジスト展を０．５μｍ径、スボツ）［１流５０ｍ八
で描画する。そして、この後に−イソプロピルアルコー
ル（ＩＰ八）とメチルイソブチルケトン（ＭＩＢＫ）と
が９８．７５：１．２５の割合で混合された現像液によ
って、１２０秒間かけて前記感電子線レジストａ！Ｉを
所望のマスクパターンに現像してから、ガラス基板ｔ−
８０℃で３０分間ポストベークする。(2) Next, the electron beam-sensitive resist is drawn with a diameter of 0.5 .mu.m in a 50 m. Thereafter, the electron beam-sensitive resist a! After developing I into a desired mask pattern, the glass substrate t-
Post-bake at 80°C for 30 minutes.
Ｖｌ）次に、現像後の感電子線レジストマスクを、２０
パスカル、５０ワツトの酸素プラズマで４０秒秒間上け
て処理してから、この感電子線レジストマスクを用いて
、クロム膜ｔＲ択的にエツチングする。そしＣ１このエ
ツチングが終ｒした後に、前記感電子線レジストマスク
を硫酸と過酸化水素との混液によって、ガラス基板から
剥離して。Vl) Next, the developed electron beam-sensitive resist mask was
After processing with Pascal and 50 Watt oxygen plasma for 40 seconds, the chromium film tR is selectively etched using this electron beam resist mask. C1 After this etching is completed, the electron beam sensitive resist mask is peeled off from the glass substrate using a mixed solution of sulfuric acid and hydrogen peroxide.
ホトマスクを完成させる。Complete the photomask.
以上に１本発明の一実施例を示したが１本発明は、クロ
ムのみに限定されるものではなくて、アルミ等の金属も
しくはその他の被塗布面に対し℃もＪ開用されるもので
あるし、感電子線レジストと同様に、ホトレジストにつ
いても荷動である。Although one embodiment of the present invention has been shown above, the present invention is not limited only to chromium, but can also be applied to metals such as aluminum or other surfaces to be coated at temperatures as low as ℃. Yes, and like electron beam resists, photoresists are also subject to load movement.
へ）発明の効束
本発明は、レジストが蛮布される被塗布面を、酸素プラ
ズマで処理することによって、被塗布面を微細な凹凸を
有するざらざらの状態にすると同時に、この被塗布面を
酸化させて水分を除去し。f) Efficacy of the invention The present invention provides for treating the surface to be coated with a resist with oxygen plasma to make the surface to be coated into a rough state with minute irregularities, and at the same time, the surface to be coated to be coated is Oxidize and remove moisture.
更に、この上にＨＭＤＳ等の接着促進剤をコートするも
のである。したがって、レジストが塗布されるときには
、被塗布面は密着性の良い良好な状態に加工さ：ｌｔて
いるので、破虜布面へのレジストの接着性は大幅に向上
される。Further, an adhesion promoter such as HMDS is coated thereon. Therefore, when the resist is applied, the surface to be coated is processed into a good condition with good adhesion, so that the adhesion of the resist to the surface of the fabric is greatly improved.
出煽人 三洋ｉｌＩ機株式会社 代理人 弁理士 佐 野 靜 夫Instigator Sanyo Ilki Co., Ltd. Agent: Patent attorney, Shizuo Sano
Claims (1)
に塗布するためのレジスト塗布方法におい工、まず、前
記被塗布面を酸素プラズマで処理する工程と、この処理
の後に、前記被盗布面にヘキサメチルジシラザン（ＨＭ
Ｄ８）等のレジスト接着促進剤金コートする工程と、こ
の後に、前記被塗布面にホトレジストもしくは感電子線
レジストを塗布する工程と、を含むこと１に特徴とする
レジスト塗布方法。 ２）前記ホトレジストおよび前記感電子線レジメ）［ポ
ジタイプのものであることを特徴とする特許請求の範囲
第１項記載のレジスト塗布方法。 ３）前記被塗布面には予め金属膜が形成されていること
を特徴とする特＃ｆ請求の範囲第１項記載のレジスト重
布方法。[Scope of Claims] 1) Photoresist or electron beam sensitive resist) A resist coating method for coating on a surface to be coated, first, a step of treating the surface to be coated with oxygen plasma, and after this treatment, Hexamethyldisilazane (HM
D8) A resist coating method characterized in that it comprises a step of coating with a resist adhesion promoter gold such as D8), and then a step of coating the surface to be coated with a photoresist or an electron beam-sensitive resist. 2) The photoresist and the electron beam sensitive resist coating method according to claim 1, wherein the photoresist is of a positive type. 3) The resist overlaying method according to claim 1, wherein a metal film is previously formed on the surface to be coated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046484A JPS60213025A (en) | 1984-04-09 | 1984-04-09 | Application of resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7046484A JPS60213025A (en) | 1984-04-09 | 1984-04-09 | Application of resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60213025A true JPS60213025A (en) | 1985-10-25 |
Family
ID=13432264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7046484A Pending JPS60213025A (en) | 1984-04-09 | 1984-04-09 | Application of resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60213025A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63289818A (en) * | 1987-05-21 | 1988-11-28 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| JPH02259088A (en) * | 1989-02-13 | 1990-10-19 | Internatl Business Mach Corp <Ibm> | Etching of metal |
| JP2003107676A (en) * | 2001-09-28 | 2003-04-09 | Hoya Corp | Mask blank, its manufacturing method and manufacturing method for mask |
| KR100472031B1 (en) * | 2002-08-07 | 2005-03-10 | 동부아남반도체 주식회사 | Method for fabrication of semiconductor device |
| US6900138B1 (en) | 1999-03-01 | 2005-05-31 | Micron Technology, Inc. | Oxygen plasma treatment for nitride surface to reduce photo footing |
-
1984
- 1984-04-09 JP JP7046484A patent/JPS60213025A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63289818A (en) * | 1987-05-21 | 1988-11-28 | Matsushita Electronics Corp | Manufacture of semiconductor device |
| JPH02259088A (en) * | 1989-02-13 | 1990-10-19 | Internatl Business Mach Corp <Ibm> | Etching of metal |
| US6900138B1 (en) | 1999-03-01 | 2005-05-31 | Micron Technology, Inc. | Oxygen plasma treatment for nitride surface to reduce photo footing |
| JP2003107676A (en) * | 2001-09-28 | 2003-04-09 | Hoya Corp | Mask blank, its manufacturing method and manufacturing method for mask |
| KR100472031B1 (en) * | 2002-08-07 | 2005-03-10 | 동부아남반도체 주식회사 | Method for fabrication of semiconductor device |
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