JPS60211987A - Multiplayered silicon solar battery - Google Patents
Multiplayered silicon solar batteryInfo
- Publication number
- JPS60211987A JPS60211987A JP59067635A JP6763584A JPS60211987A JP S60211987 A JPS60211987 A JP S60211987A JP 59067635 A JP59067635 A JP 59067635A JP 6763584 A JP6763584 A JP 6763584A JP S60211987 A JPS60211987 A JP S60211987A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous silicon
- junction
- solar cell
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 10
- 229910052710 silicon Inorganic materials 0.000 title claims description 10
- 239000010703 silicon Substances 0.000 title claims description 10
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 150000004767 nitrides Chemical class 0.000 claims abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 3
- 150000002739 metals Chemical class 0.000 claims description 4
- -1 oxides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 150000002222 fluorine compounds Chemical class 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 230000009977 dual effect Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052986 germanium hydride Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 86
- 238000006243 chemical reaction Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は多層構造（タンデム構造）シリコン太陽電池に
係り、特に、光電変換特性の秀れた多層構造シリコン太
陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a multilayer structure (tandem structure) silicon solar cell, and particularly to a multilayer structure silicon solar cell with excellent photoelectric conversion characteristics.
従来の多層構造アモルファスシリコン太陽電池は第１図
に示すＡ ｇ ／ Ｔ ｉ ／ Ｉ ’ｒ○／ｎ１ｐｎ
ａ−８ｉ ：Ｈ／ｉ ａ Ｓｉ ｏ、ｅ ＧＥＩｏ、４
：Ｈ／Ｐａ−８ｉ ： Ｈ／ＳＵＳ構造あるいは第２
図に示すＡ ｇ／Ｔ ｉ／ Ｉ Ｔｏ／ｎ１ｐｎｉｐｎ
ａ−８ｉ ： Ｈ／ １ａ−ｓｉｎ、６Ｇｅｏ、ａ
： Ｈ／ｐ ａ−３ｉ０．、Ｇｅｏ、４：Ｈ／ＳＵＳ構
造であり、非常に薄い（８０〜１５０人）２層とｎ層が
直接接していたため、ｉ （１）／ ｐ ｎ層 ｉ （
Ｕ）構造においてｎ層が１（１）と、Ｐ層がｉ （ＩＩ
）層と部分的に接触したりして、太陽電池の光電変換特
性は曲線因子（ＦＦ）が０．６０と悪く変換効率は８．
６％に止まっていた。A conventional multilayer structure amorphous silicon solar cell has A g / T i / I 'r○/n1pn shown in Fig. 1.
a-8i: H/i a Si o, e GEI o, 4
:H/Pa-8i: H/SUS structure or second
A g/T i/ I To/n1pnipn shown in the figure
a-8i: H/ 1a-sin, 6Geo, a
: H/p a-3i0. , Geo, 4: H/SUS structure, and the very thin (80 to 150) two layers and n layer were in direct contact, so i (1)/ p n layer i (
U) In the structure, the n layer is 1 (1) and the P layer is i (II
) layer, the photoelectric conversion characteristics of the solar cell are poor with a fill factor (FF) of 0.60 and a conversion efficiency of 8.
It remained at 6%.
本発明の目的はｐｉｎｐｉｎ接合を含む多層構造（アモ
ルファス）シリコン太陽電池において、ｎ層と２層の間
に金属、酸化物あるいはシリサイド等の中間層を設ける
ことにより、光電変換特性の秀れた（アモルファス）シ
リコン太陽電池を提供することにある。The purpose of the present invention is to provide a multilayer structure (amorphous) silicon solar cell including a pin-pin junction with excellent photoelectric conversion characteristics by providing an intermediate layer such as metal, oxide, or silicide between the n-layer and the second layer. Our objective is to provide amorphous (amorphous) silicon solar cells.
現在、アモルファスシリボン太陽電池の変換効率は、最
高１０．７％で報告されている。これは、単層構造太陽
電池で得られたもので、理論変換効率１２．５〜１５％
に対する達成率が高い。他方、多層構造太陽電池の理論
変換効率は２０％以上であるのに対し実験的に得られて
いる最高値は８．６％である。Currently, the conversion efficiency of amorphous silicon solar cells is reported to be up to 10.7%. This was obtained with a single-layer structure solar cell, with a theoretical conversion efficiency of 12.5 to 15%.
The achievement rate is high. On the other hand, while the theoretical conversion efficiency of a multilayer solar cell is 20% or more, the highest value experimentally obtained is 8.6%.
多層構造アモルファスシリコン太陽電池の問題点のひと
つは、２層とｎ層が直接接している点にあると考えられ
る。アモルファス半導体では、禁制帯内に局在準位密度
が大きく、特別に不純物濃度を高くしなくとも、ｐｎ接
合はきわめて漏洩電流の大きい接合となる。しかし−Ｐ
ｒ ｎ層においては光によりキャリアを発生しないため
、できるだけ薄くして光吸収量を小さくする必要があり
、通常８０〜１３０人としている。この様に薄いと、１
（１）／ｐｎ／１（ＩＩ）構造においてｎ層と１（Ｉ）
層および２層と１（ＩＩ）層が部分的に接触している可
能性があり、このことが１（Ｉ）ｐ接合とｎｌ（ｎ）接
合の接合特性を悪くし、太陽電池を低くしていると考え
られる。One of the problems with multilayer amorphous silicon solar cells is thought to be that the two layers and the n-layer are in direct contact with each other. In an amorphous semiconductor, the density of localized levels is large within the forbidden band, and even without a particularly high impurity concentration, the pn junction becomes a junction with extremely large leakage current. But-P
Since carriers are not generated in the r n layer by light, it is necessary to make it as thin as possible to reduce the amount of light absorption, and the number of layers is usually 80 to 130. If it is thin like this, 1
(1)/pn/1(II) structure with n layer and 1(I)
There is a possibility that the 1(II) layer and the 2nd layer are in partial contact, which will deteriorate the junction properties of the 1(I)p junction and the nl(n) junction, making the solar cell lower. It is thought that
本発明は上記の問題点を解決するためになされたもので
あり、９層とｎ層の間に、金属、酸化物、弗化物、窒化
物のうち少なくとも一考あるいは、これらのいずれかの
ひとつとアモルファスシリコンの反応した層を介在させ
ることにより、上記１（Ｉ）ｐ接合およびｎｌ（ＩＩ）
接合の接合特性を良くし、さらに高効率の太陽電池を与
えるものである。The present invention has been made to solve the above problems, and includes at least one of metals, oxides, fluorides, and nitrides, or one of these, between the 9th layer and the n-layer. By intervening a reacted layer of amorphous silicon, the above 1(I) p junction and nl(II)
This improves the bonding characteristics of the junction and provides a highly efficient solar cell.
上記９層とｎ層の間に介在させる物質に必要な条件とし
て光吸収が少なく、ｐおよびｎ層と障壁を形成しないこ
とが要求される。また、アモルファスシリコン膜形成時
にアモルファスシリコン層と反応することはあっても、
反応がｉ層まで及んではならない。したがって、金属の
例としてはＣｒ ＋ Ｍ ｏ ＋ Ｗ ｒ Ｔ ｒ ＋
Ｖ ＋ Ｚ ｒ ＋ Ｎ ｂ ｙ Ｔ ａ 。The material interposed between the nine layers and the n layer is required to have low light absorption and not form a barrier with the p and n layers. In addition, although it may react with the amorphous silicon layer during the formation of the amorphous silicon film,
The reaction must not extend to the i-layer. Therefore, examples of metals are Cr + Mo + W r T r +
V + Z r + N b y T a .
Ｈｆ ＊ Ｎ ｉおよびＣｕが挙げられ、これらのシリ
サイドあるいは、これらの金属とアモルファスシリコン
層と反応した層であっても良い。さらに、ＩＴ○（Ｉｎ
ｄｉｕｍ Ｔｉｎ ０ｘｉｄｅ） 、Ｓ ｉ Ｏ２等の
透光性導電体層あるいは、Ｔａ２０ｒ、、Ｓ ｉ ０９
Ｓｉｎ２等の酸化物、Ｃａ Ｆ２ ＋ Ｍ ｇ Ｆ２等
のフッ化物層あるいは、これらとアモルファスシリコン
層との混晶であっても良い。Examples include Hf*Ni and Cu, and a layer formed by reacting these metals with silicide or an amorphous silicon layer may also be used. Furthermore, IT○(In
Transparent conductor layer such as dium Tin Oxide), S i O2, or Ta20r, Si 09
It may be an oxide layer such as Sin2, a fluoride layer such as CaF2+MgF2, or a mixed crystal of these and an amorphous silicon layer.
さらに、多層構造を構成する接合としては、上記のアモ
ルファスシリコンによるｐｉｎ接合に限らず、結晶Ｓｉ
による” Ｐ ｒ ｎ” ｐｐ＋接合、ａ−８ｉと結晶
Ｓｉによるｎｐ接合、さらに、ショットキーまたは金属
−絶縁物一半導体接合であっても良い。Furthermore, the junction constituting the multilayer structure is not limited to the above-mentioned pin junction made of amorphous silicon, but also crystalline Si.
It may be a "P r n" pp+ junction according to the method, an np junction using a-8i and crystalline Si, or a Schottky or metal-insulator-semiconductor junction.
以下、本発明の実施例を図面により説明する。 Embodiments of the present invention will be described below with reference to the drawings.
実施例１
ここでは、まず、ＳｎＯ，を中間層として用いた場合に
ついて述べる。第３図の如＜ＳＵＳ基板１上に、プラズ
マＣＶＤ （Ｃｈｅ＋＋＋１ｃａｌ ＶａｐｏｒＤ ｅ
ｐｏｓｉｔｉｏｎ ）法で、基板温度２３０℃にてＢ
２ ＨｓガスとＳ ｉ Ｈａガスとを混合（混合比Ｂ
２ Ｈｓ ／ Ｓ Ｉ Ｈ２≧０．５層％）したガスを
用いて、Ｂを含んだ水素化非晶質シリコン（２層）２を
、次に、ＳｉＨ４ガスとＧ ｅ Ｈ，ガスを混合したガ
スを用いて、ａ−８ｉ ｏ、、Ｇｅ ０４： Ｈ（ｉ層
）３を、さらにその上にＰＨ，ガスとＳｉＨ４ガスとを
混合（混合比ＰＨ，／ＳｉＨ４≧０．５Ｖ％）したガス
を用いてＰを含んだ水素化非晶質シリコン（ｎ層）４を
順次形成する。各層の膜厚は例えば２層３００人、１層
５０００人、ｎ層１００人程度で良い。次にその上全面
に、基板温度１００〜２５０℃の範囲内で真空蒸着法に
てｓｂドープ５ｎＯ２２０を１００人の厚さ形成する。Example 1 First, a case will be described in which SnO is used as the intermediate layer. As shown in Fig. 3, plasma CVD (Che+++1cal VaporDe
position) method at a substrate temperature of 230°C.
2 Mixing Hs gas and Si Ha gas (mixing ratio B
Hydrogenated amorphous silicon (two layers) containing B was prepared using a gas containing 2Hs/S I H2≧0.5 layer%), and then SiH4 gas and G e H gas were mixed. Using a gas, a-8io,,Ge 04: H (i layer) 3 is further mixed with PH, gas and SiH4 gas (mixing ratio PH, /SiH4≧0.5V%). A hydrogenated amorphous silicon (n layer) 4 containing P is sequentially formed using the following methods. The thickness of each layer may be, for example, about 300 layers for two layers, 5000 layers for one layer, and 100 layers for n layer. Next, sb-doped 5nO220 is formed to a thickness of 100 mm over the entire surface by vacuum evaporation at a substrate temperature of 100 to 250 DEG C.
しかる後、さらに、水素化非晶質シリコンを２層５．１
層６、ｎ層７の順に形成する。各層の厚さは、９層７５
人、１層１８００人、ｎ層８０人程度とする。After that, two layers of hydrogenated amorphous silicon 5.1
Layer 6 and n-layer 7 are formed in this order. The thickness of each layer is 9 layers 75
There will be approximately 1,800 people in each layer and 80 people in the N layer.
最後に全面にＩ Ｔｏ （Ｉｎｄｉｕｍ Ｔｉｎ ０ｘ
ｉｄｅ ） ８を１８００人の厚さ形成し、集電電極と
して、Ｔｉ９／Ａｇ１Ｏ二層電極を形成する。該太陽電
池の光電変換特性は、擬似太陽光１００ｍＷ／ＣＪｊ照
射下で。Finally, apply I To (Indium Tin 0x) to the entire surface.
ide) 8 was formed to a thickness of 1800 mm, and a Ti9/Ag1O two-layer electrode was formed as a current collecting electrode. The photoelectric conversion characteristics of the solar cell were measured under irradiation with simulated sunlight of 100 mW/CJj.
曲線因子０．６５、変換効率８．９％であり、ｎｐ接合
間に中間層を有してない従来の二層構造太陽電池（曲線
因子： ０．５８、変換効率＝７．７％）に比べ秀れた
値を示した。The fill factor is 0.65 and the conversion efficiency is 8.9%, compared to a conventional two-layer solar cell without an intermediate layer between the np junctions (fill factor: 0.58, conversion efficiency = 7.7%). It showed an excellent value.
実施例２
ここでは、Ｓｎ○２とＯｒを中間層として用いた三層構
造太陽電池について述べる。第４図の如く、上記実施例
１と同様にＳＵＳ基板１上に、ｐ層（ａ−８ｉ ：Ｈ）
１１． ｉ層（ａ−ＳｉＧｅ：Ｈ）１２、ｎ層（ａ−
８ｉ ： Ｈ） １３を順次２５０人。Example 2 Here, a three-layer structure solar cell using Sn○2 and Or as an intermediate layer will be described. As shown in FIG. 4, a p-layer (a-8i:H)
11. i-layer (a-SiGe:H) 12, n-layer (a-
8i: H) 13 for 250 people in sequence.
５０００人、８０人程度の厚さ形成する。この上にｓｂ
ドープＳｎ○２２１を７０人形成後、２層１４．１層１
５．ｎ層１６（いずれもａ−８ｉ二Ｈ）を７０人、 ２
５００人、７５人程度の厚さ形成する。この上に厚さ２
０人のＣｒ２２を真空蒸着法で形成後、さらに２層１７
．ｉ層１８，０層１９（いずれもａ−８ｉ：Ｈ）を７０
人、 １３００人。The thickness will be approximately 5,000 and 80 people. sb on top of this
After forming 70 doped Sn○221 layers, 2 layers 14.1 layers 1
5. 70 people in the n layer 16 (all a-8i 2H), 2
The thickness of about 500 and 75 people will be formed. Thickness 2 on top of this
After forming 0 layers of Cr22 by vacuum evaporation method, two more layers17
．． I layer 18, 0 layer 19 (both a-8i:H) 70
1300 people.
７５人程度の厚さ形成する。最後に全面にＩＴＯ８を１
８００人の厚さ、さらに集電電極としてＴ ｉ ９／
Ａ ｇ １０二層電極を形成する。該太陽電池の特性は
、擬似太陽光１００ ｍ Ｗ／ ｃｎ？照射下で、変換
効率９．３％を示した。ｎｐ接合間に中間層を有しない
従来の三層構造太陽電池に比べ特に曲線因子が秀れてい
た。Form a thickness of about 75 people. Finally, apply 1 layer of ITO8 to the entire surface.
800 people thick, plus T i 9/ as a current collecting electrode
Form an A g 10 bilayer electrode. The characteristics of the solar cell are as follows: simulated sunlight 100 mW/cn? Under irradiation, it showed a conversion efficiency of 9.3%. The fill factor was particularly excellent compared to conventional three-layer structure solar cells that do not have an intermediate layer between np junctions.
実施例３
第５図の如く、Ｐ型多結晶Ｓｔ基板２３上にｎ層（ａ−
３ｉ ： Ｈ） ２４、Ｃｒ層２５を形成後さらに２層
２６．１層２７．９層２８のａ−８ｔ：Ｈ膜とＩＴ○膜
２９を設け、Ｓｉ基板の裏面にＡＱ３０を蒸着した。Example 3 As shown in FIG. 5, an n layer (a-
3i: H) 24. After forming the Cr layer 25, two further layers 26, 1, 27, and 9 of the a-8t:H film and the IT◯ film 29 were provided, and AQ30 was deposited on the back surface of the Si substrate.
本実施例によれば、従来のＣｒ層ない太陽電池の曲線因
子が０．６５１であるのに対し、０．７０の曲線因子が
得られた。このため変換効率１３％を達成することがで
きた。According to this example, a fill factor of 0.70 was obtained, whereas the fill factor of a conventional solar cell without a Cr layer was 0.651. Therefore, a conversion efficiency of 13% could be achieved.
実施例４
第６図の如く、ｐ型車結晶Ｓｉ基板２３表面に拡散法（
あるいはイオン打込み法）によりｎ ＋層３１裏面にＰ
゛層３２を形成後、Ｔｉｉ層３を設け、さらに２層２６
．１層２７．９層２８のａ−８ｉ：Ｈ膜とＩＴＯ膜２９
を形成し、Ｓｉ基板の裏面にＴｉ３３およびＡｇ３４を
蒸着した。Example 4 As shown in FIG. 6, a diffusion method (
Alternatively, P is added to the back surface of the n + layer 31 by ion implantation method).
After forming the layer 32, a Tii layer 3 is provided, and two more layers 26 are formed.
．． 1 layer 27.9 layer 28 a-8i: H film and ITO film 29
was formed, and Ti33 and Ag34 were deposited on the back surface of the Si substrate.
本実施例によれば、開放電圧１．５ ｖｏｌｔ、曲線因
子０．７５０変換効率１４．５％を得た。通常の結晶Ｓ
ｉ太陽電池と比較し、高いＶｏｃ、同等の変換効率が得
られた。According to this example, an open circuit voltage of 1.5 volts, a fill factor of 0.750, and a conversion efficiency of 14.5% were obtained. normal crystal S
Compared to the i solar cell, higher Voc and equivalent conversion efficiency were obtained.
本発明によれば、多層構造（アモルファス）シリコン太
陽電池中のｉｐ接合およびｐｉ接合の接合特性を良くす
ることができるので、太陽電池の変換効率を向上させる
効果がある。According to the present invention, the junction characteristics of the IP junction and the Pi junction in a multilayer structure (amorphous) silicon solar cell can be improved, so there is an effect of improving the conversion efficiency of the solar cell.
第１図は二層構造太陽電池の従来例を示す断面構造図、
第２図は三層構造太陽電池の従来例を示す断面構造図、
第３図は本発明の実施例ｉの二層構造太陽電池を示す断
面図、第４図は本発明の実施例２の三層構造太陽電池を
示す断面図である。
第５図は本発明の実施例３、第６図は本発明の実施例４
の二層構造太陽電池を示す断面図である。
１・・・ＳＵＳ基板、２，５，１１，１４，１７゜２６
−ｐ層（ａ−８ｉ ： Ｈ） 、 ３．１２−ｉ層（ａ
５ｘＧｅ： Ｈ）、６＋ １５＋ １８＋ ２７・・
・を層（ａ−８ｉ、：Ｈ） 、４．７．１３．１６．１
９゜２４．２８−ｎ層（ａ−３’ｉ ： Ｈ） 、８．
２９−透明電極（ＩＴＯ）、９，３３．３４・・・Ｔｉ
、１０．３５−Ａｇ、２０．２ｌ−８ｎＯ２，２２゜■
Ｉ 図 冨 ３ 図
右５図
罵６図
第１頁の続き
０発 明 者 中 村 信 夫 国分寺市東恋り央研究
所内Figure 1 is a cross-sectional structural diagram showing a conventional example of a two-layer solar cell.
Figure 2 is a cross-sectional structural diagram showing a conventional example of a three-layer solar cell.
FIG. 3 is a cross-sectional view showing a two-layer structure solar cell according to Example i of the present invention, and FIG. 4 is a cross-sectional view showing a three-layer structure solar cell according to Example 2 of the present invention. FIG. 5 is a third embodiment of the present invention, and FIG. 6 is a fourth embodiment of the present invention.
FIG. 2 is a cross-sectional view showing a two-layer structure solar cell. 1...SUS board, 2, 5, 11, 14, 17°26
-p layer (a-8i: H), 3.12-i layer (a
5xGe: H), 6+ 15+ 18+ 27...
・Layer (a-8i, :H), 4.7.13.16.1
9°24.28-n layer (a-3'i: H), 8.
29-Transparent electrode (ITO), 9,33.34...Ti
, 10.35-Ag, 20.2l-8nO2, 22゜■
I Figure Tomi 3 Figure right 5 Figure 6 Continuation of Figure 1 page 0 Inventor Nobuo Nakamura Kokubunji City Higashiko Rio Research Institute
Claims (1)
ｎ接合構造のごとく、少なくとも１つ以上のｐｎ、ｐｉ
ｎ、ショットキーまたは金属−絶縁物一半導体接合を有
する多層接合構造において、オーミック接触を必要とす
る層の間に、透光性物質を有することを特徴とする多層
構造シリコン太陽電池。 ２、特許請求の範囲第１項における透光性物質が、金属
薄膜、酸化物、弗化物、窒化物の少なくとも一考から成
ることを特徴とする多層構造シリコン太陽電池。 ３、特許請求の範囲第１項における透光性物質が、金属
、酸化物、弗化物、窒化物の少なくとも一考とシリコン
が反応し形成した物質であることを特徴とする多層構造
シリコン太陽電池。[Claims] 1. Pinpn junction structure or pinpinpi
Like an n-junction structure, at least one pn, pi
n. A multilayer structure silicon solar cell characterized in that a multilayer junction structure having a Schottky or metal-insulator-semiconductor junction includes a light-transmitting substance between layers requiring ohmic contact. 2. A multilayer structure silicon solar cell, wherein the light-transmitting substance according to claim 1 is made of at least one of a metal thin film, an oxide, a fluoride, and a nitride. 3. A multilayer structure silicon solar cell characterized in that the light-transmitting substance according to claim 1 is a substance formed by reacting silicon with at least one of metals, oxides, fluorides, and nitrides. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59067635A JPS60211987A (en) | 1984-04-06 | 1984-04-06 | Multiplayered silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59067635A JPS60211987A (en) | 1984-04-06 | 1984-04-06 | Multiplayered silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60211987A true JPS60211987A (en) | 1985-10-24 |
Family
ID=13350641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59067635A Pending JPS60211987A (en) | 1984-04-06 | 1984-04-06 | Multiplayered silicon solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60211987A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6191974A (en) * | 1984-10-11 | 1986-05-10 | Kanegafuchi Chem Ind Co Ltd | Heat resisting multijunction type semiconductor element |
| JPS62162365A (en) * | 1986-01-10 | 1987-07-18 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS6366976A (en) * | 1986-09-08 | 1988-03-25 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion semiconductor device |
| JPS63100858U (en) * | 1986-12-19 | 1988-06-30 | ||
| JPS63503103A (en) * | 1985-09-30 | 1988-11-10 | 鐘淵化学工業株式会社 | Multi-junction semiconductor device |
| JPH04127580A (en) * | 1990-09-19 | 1992-04-28 | Hitachi Ltd | Multi-junction type amorphous silicon solar cell |
| JP2009170727A (en) * | 2008-01-17 | 2009-07-30 | Kaneka Corp | Multi-junction silicon thin-film photoelectric conversion device |
| JP2014158047A (en) * | 1998-08-19 | 2014-08-28 | Trustees Of Princeton Univ | Organic photosensitive optoelectronic device |
-
1984
- 1984-04-06 JP JP59067635A patent/JPS60211987A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6191974A (en) * | 1984-10-11 | 1986-05-10 | Kanegafuchi Chem Ind Co Ltd | Heat resisting multijunction type semiconductor element |
| JPS63503103A (en) * | 1985-09-30 | 1988-11-10 | 鐘淵化学工業株式会社 | Multi-junction semiconductor device |
| JPS62162365A (en) * | 1986-01-10 | 1987-07-18 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS6366976A (en) * | 1986-09-08 | 1988-03-25 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion semiconductor device |
| JPS63100858U (en) * | 1986-12-19 | 1988-06-30 | ||
| JPH04127580A (en) * | 1990-09-19 | 1992-04-28 | Hitachi Ltd | Multi-junction type amorphous silicon solar cell |
| JP2014158047A (en) * | 1998-08-19 | 2014-08-28 | Trustees Of Princeton Univ | Organic photosensitive optoelectronic device |
| JP2014170953A (en) * | 1998-08-19 | 2014-09-18 | Trustees Of Princeton Univ | Organic photosensitive photoelectric device |
| JP2009170727A (en) * | 2008-01-17 | 2009-07-30 | Kaneka Corp | Multi-junction silicon thin-film photoelectric conversion device |
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