JPS5988876A - Photo interrupter - Google Patents
Photo interrupterInfo
- Publication number
- JPS5988876A JPS5988876A JP57198603A JP19860382A JPS5988876A JP S5988876 A JPS5988876 A JP S5988876A JP 57198603 A JP57198603 A JP 57198603A JP 19860382 A JP19860382 A JP 19860382A JP S5988876 A JPS5988876 A JP S5988876A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting element
- receiving element
- mold
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims 9
- 239000000463 material Substances 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 4
- 238000002834 transmittance Methods 0.000 abstract 1
- 230000008054 signal transmission Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、相対向した発光素子および受光素子それぞ
れに対応して凸レンズの収けられた柾脂封止型のフォト
インクラゲタに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a resin-sealed photo ink jetter in which convex lenses are housed in correspondence with opposing light-emitting elements and light-receiving elements, respectively.
従来より便用され又いる代表的なフォトインクラフタは
第１図（ａ） 、 （ｂ）に示すようなもので、相刈向
して収げられた発光素子ＩＩと受光素子１２とから成り
、これらの振子間の間隔部ｒ（おける光の透過・遮断状
態を受光素子が検知し、電気信号に置き換えるものであ
る。このようなフォトインクラフタの製造過程は、止す
、リードフレームノ３に所定のホンディングにより配設
された発光素子１１および受光素子１２を各各党透過性
樹脂）４によって成型刺止し光路方向に凸レンズ１５を
廟づ−る発光素子部１６受光素子部１７をそれぞれ形成
する。その後上配凸レンズ１５の果光効釆を妨けす、外
乱光に幻する遮光効果を持たせるため適当な透明榴脂ノ
８と不透明樹脂ノ９とを組み合わせて、上記発光素子部
１６および受光素子部１７を嶺つと共に、連結部２０を
形成して発光素子１１と受光素子１２とが向い合うよう
に固定する。A typical photo-in crafter that has been used in the past is shown in FIGS. 1(a) and 1(b), and consists of a light-emitting element II and a light-receiving element 12 that are arranged in a mutually oriented manner. , the light receiving element detects the transmission/blocking state of light at the interval r (r) between these pendulums, and converts it into an electrical signal. A light emitting element 11 and a light receiving element 12 arranged by predetermined honding are molded and fixed with transparent resin 4 of each party, and a light emitting element part 16 and a light receiving element part 17 are formed, respectively, with a convex lens 15 arranged in the optical path direction. Form. After that, in order to prevent the light effect of the upper convex lens 15 and to have a light-shielding effect that looks like ambient light, a suitable transparent resin film 8 and opaque resin film 9 are combined to form the light emitting element section 16 and the light receiving element. At the same time as the portion 17 is bent, a connecting portion 20 is formed to fix the light emitting element 11 and the light receiving element 12 so as to face each other.
このような構造の素子では、発光素子部１６側と受光素
子部１７ｉ１１１１とを形成し、それぞれを連結部２０
によって一体化させるため、発光素子１ノと受光素子１
２との光軸合わせの精度を出すことが困難であると共に
、組み立て作業が煩雑であるという欠点を鳴していた。In an element having such a structure, the light emitting element part 16 side and the light receiving element part 17i1111 are formed, and each is connected to the connecting part 20.
In order to integrate the light emitting element 1 and the light receiving element 1,
It is difficult to accurately align the optical axis with 2, and the assembly work is complicated.
これらの欠点を改善するために第２図（ａ） 、 （ｂ
）に示す構造のものも提案されている。すなわち、図に
示すように発光素子１ノと受光素子１２とをコの字形の
キャビティ（中空）を南する２つ割り金型を用いて光透
過性の樹脂により一体封止したものを、適宜光路にスリ
ットを有する遮光用のケースに組み込むもので、光軸合
わせ精度および作業性を著しく向上できる。In order to improve these shortcomings, Fig. 2 (a) and (b)
) has also been proposed. That is, as shown in the figure, a light-emitting element 1 and a light-receiving element 12 are integrally sealed with a light-transmitting resin using a two-part mold with a U-shaped cavity (hollow) facing south, and then It is built into a light-shielding case that has a slit in the optical path, and can significantly improve optical axis alignment accuracy and workability.
しかしながら、このように金型な用いた例えはいわゆる
トランスファモールドでは、金型の制約を受け、第３図
に示すような発光素子部１６および受光素子ｓ１７に凸
レンズ１５な肩する構造のものを一体成形できなかった
。すなわち、トランスファモールド等、大意生腫向きの
樹脂封止法では２つ割りの金型な用いているが、リード
フレームがフォトインクラフタの両側から出るため、一
対の金型はリードフレーム１３を挾んで図の上下方向に
割れるものでなげれはならす、この条件下では、フォト
インクラフタに図のような連結部２ｏと向い合う凸レン
ズ１５を同時に形成することが不可能であり、光４１号
の伝達効率を高めるのか困難であった〇尚、図のような
向い合う凸レンズを設けた場合、素子間距離、レンズ寸
法等で大きく異なるが通常のフォトインタ２ブタでは凸
レンズが無いものに比べ２〜ｌＯ倍も光信号の伝達効率
が改善される。However, in the case of a so-called transfer mold, the example using a mold is limited by the mold, and a convex lens 15 with a shoulder structure is integrated into the light emitting element part 16 and the light receiving element s17 as shown in FIG. Could not be molded. In other words, in resin sealing methods for large tumors such as transfer molding, a two-part mold is used, but since the lead frame comes out from both sides of the photo-in crafter, the pair of molds sandwich the lead frame 13. Under these conditions, it is impossible to simultaneously form the convex lens 15 facing the connecting part 2o as shown in the photo in the photo in crafter, and the optical no. It was difficult to increase the transmission efficiency. However, when installing convex lenses that face each other as shown in the figure, the distance between the elements, lens dimensions, etc. will vary greatly, but with a normal photointerchanger, it will be 2 to 3 times smaller than one without a convex lens. The optical signal transmission efficiency is improved by 10 times.
この発明は、上記のような点に鑑みなされたもので、精
度良く発光素子と受光素子の光軸合わせができ、作業性
を良好なものとするために２つ割り成型金型によって撓
Ｊｌｋｒ到止司能な発光素子部、受光素子部、連結部お
よびレンズを備えた高い信号伝達効率を鳴するフォトイ
ンタラゲタを掟供しようとするものである。This invention was made in view of the above points, and in order to accurately align the optical axes of the light-emitting element and the light-receiving element, and to improve workability, it is possible to achieve the bending angle by using a split mold. The present invention is intended to provide a photo interrogator with high signal transmission efficiency, which is equipped with a light emitting element section, a light receiving element section, a connecting section, and a lens that are capable of transmitting a signal.
すなわち、この発明に係るフォトインタラプタでは、発
光素子と受光素子とを収める樹脂封止型のケースの連結
部を、凸レンズの径よりも広い間隔を有する構造にした
もので、リードフレームを挾んだ下金盤と下金盤とによ
り、従来不可能であった向い合う凸レンズおよび連結部
を同時に成形できるようにしたものである。That is, in the photointerrupter according to the present invention, the connection part of the resin-sealed case that houses the light emitting element and the light receiving element is structured to have a gap wider than the diameter of the convex lens, and the lead frame is sandwiched between the connecting parts of the resin-sealed case that houses the light emitting element and the light receiving element. By using the lower die plate and the lower die plate, it is possible to simultaneously mold opposing convex lenses and a connecting portion, which was previously impossible.
〔発明の実施例」
以下図面を参照してこの発明の一実施例につきｍｔ明す
る。第４図（ａ） ｔ、 （ｂ）はそれぞれ製造過程中
における外観図および断面図で、発光素子部１６と受光
素子部１７とを連結する連結部２０が中央において開口
したものとなっている。この開口部の幅りは、凸レンズ
の径りよりも広い。[Embodiment of the Invention] An embodiment of the present invention will be explained below with reference to the drawings. 4(a), t, and (b) are an external view and a sectional view, respectively, during the manufacturing process, and the connecting portion 20 connecting the light emitting element part 16 and the light receiving element part 17 is opened in the center. . The width of this opening is wider than the diameter of the convex lens.
次に簡単に製造過程を説明する。図において、ＧａＡｓ
（カリウム・ひ累）等の発光ダイオードによる発光素
子１ノおよびシリコンフォトトランジスタ等の受光素子
１２をそれぞれのリードフレーム１３に配設し、所定の
ワイヤボ／ディ／グを行った後、これらのリードフレー
ムをトランスファーモールド用の２つ割金型（トランス
ファー金型）上にそれぞれの素子が向がい合うよう配置
する。その後この金型中に透鴫エポキシモールド樹脂を
注入しトランスファー成型する。Next, the manufacturing process will be briefly explained. In the figure, GaAs
A light emitting element 1 made of a light emitting diode such as (potassium chloride) and a light receiving element 12 such as a silicon phototransistor are arranged on each lead frame 13, and after performing a predetermined wire bonding/digging, these leads are The frame is placed on a two-split mold for transfer molding (transfer mold) so that the respective elements face each other. Thereafter, a transparent epoxy molding resin is injected into this mold and transfer molding is performed.
次いでこの金星かも硬化した樹脂を離型し、アフタキュ
ア（内硬比熱処理）恢、リードフレーム１３枠部等不要
となる部分を切り落とし、図に示すようなリード（アウ
ターリード）を形成する。Next, the cured resin is released from the mold, after-cured (inner hard specific heat treatment), and unnecessary parts such as the frame portion of the lead frame 13 are cut off to form leads (outer leads) as shown in the figure.
ここで第４図（ａ）における破線は、トランスファ金型
の上部側の金型と下部側の動量との嵌合する線を示した
ものである。Here, the broken line in FIG. 4(a) indicates a line where the upper mold and the lower moving amount of the transfer mold fit.
続いて、第４図に示すものを例えは透明側脂ノ８と不透
明樹脂とから成る光通過用のスリットを倫えた外乱光遮
断用の外部ケースに組み込んでフォトインタラプタを完
成する。Subsequently, the photointerrupter shown in FIG. 4 is assembled into an external case for blocking external disturbance light, which has a slit for passing light, which is made of a transparent resin 8 and an opaque resin, for example, to complete a photointerrupter.
尚、このフォトインタラプタは外乱光が少ない便用環境
用のものでは、遮光用の外部ケースに組み込む必要がな
く、外部ケースの形は柚々割り金型の嵌合する線は、フ
ォトインタラゲタを２つ割り金型で形成できる範囲で変
更しても良い。Note that this photointerrupter is for use in a convenient environment with little ambient light, so there is no need to incorporate it into a light-shielding external case. Changes may be made within the range that can be formed using a two-split mold.
以上のようにこの発明によれは、２つ割り金型を用いて
作業性良く製造でさ、光軸合わせ精度がほぼ金ｍ、精度
と等しい±Ｑ、ｌ ｍ７５以上で、光軸上に凸し／ズを
有する信号伝達効率の＾いフォトインクラブタを提供す
ることができる。As described above, according to the present invention, it is possible to manufacture the product with good workability using a two-split mold, and the optical axis alignment accuracy is approximately ±Q, which is equal to the accuracy of ±Q, lm75 or more, and there is a convexity on the optical axis. Accordingly, it is possible to provide a photoinkractor with high signal transmission efficiency and high signal transmission efficiency.
第１図、第２図および第３図はそれぞれ従来のフォトイ
ンクラブタを示し、第４図はこの発明の一実施例に係る
フォトインタラプタを示す。
ノド・・発光素子、１２・・・受光集子、１３・・リー
ドフレーム、１５・・・凸レンズ、１６・・・発光素子
部、１７・・・受光素子部、２０・・・連結部。
出願人代理人 弁理士 鈴 江 武 彦矛３
（ａ）
矛４ 図
（ａ）
（ｂ）
（ｂ）1, 2, and 3 each show a conventional photointerrupter, and FIG. 4 shows a photointerrupter according to an embodiment of the present invention. Nod... Light emitting element, 12... Light receiving collector, 13... Lead frame, 15... Convex lens, 16... Light emitting element section, 17... Light receiving element section, 20... Connection section. Applicant's agent Patent attorney Takehiko Suzue 3 (a) 4 Diagram (a) (b) (b)
Claims (1)
半導体発光素子の発光光に対して光透過性を有する樹脂
材からなり上記それぞれの素子を固定刺止する発光素子
部および受光素子部と、上記半導体発光素子および半導
体受光素子が相対向し画素子間の光路となる部位に間隔
が設定される状態で上記発光素子部および受光素子部と
を連結する連結部とを備えたフォトインクラブタにおい
て、上記発光素子部および受光素子部には光軸上となる
面にそれぞれ凸レンズが設けられていると共に、上記連
結部は上記凸レンズの直径よりも広い間隔を有して並設
され、上記発光素子部、受光素子部および連結部が一体
的に成型封止されていることを特徴とするフォトインタ
ラプタ。 （２）半導体発光素子と、半導体受光素子と上記半導体
発光光に対して光透過性を有する樹脂相から成り上記そ
れぞれの素子をｂ＋定封止する発光素子部および受光素
子部と、上記半導体発光素子および半導体受光素子が４
１対向し画素子間の光路となる部位に間隔が設定される
状態で上記発光素子部および受光素子部とを連結する連
結部とを備えたフォトインタラゲタにおいて、上記発光
素子および受光素子部には光軸上となる面にそれぞれ凸
レンズが設けられ又いると共に、上記連結部は上配凸レ
ンズの直径よりも広い間隔を市して並設され、一体的に
形成封止された発光素子部、受光素子部および連結部が
光不透過性の光路な阻害しない外部ケースに収められて
いることを特徴とするフォトインタラプタ。[Scope of Claims] (4) A semiconductor light-emitting element, a semiconductor light-receiving element, and a light-emitting element part that is made of a resin material that is transparent to the light emitted from the semiconductor light-emitting element and fixes each of the above-mentioned elements. and a connecting portion that connects the light-receiving element portion and the light-emitting element portion and the light-receiving element portion in a state where the semiconductor light-emitting element and the semiconductor light-receiving element face each other and a gap is set at a portion that forms an optical path between the pixel elements. In the photoincrementor equipped with the above, the light emitting element section and the light receiving element section are each provided with a convex lens on a surface on the optical axis, and the connecting section has an interval wider than a diameter of the convex lens. A photointerrupter characterized in that the light emitting element section, the light receiving element section and the connecting section are arranged side by side and integrally molded and sealed. (2) A semiconductor light-emitting element, a semiconductor light-receiving element, and a light-emitting element part and a light-receiving element part that are made of a resin phase that is optically transparent to the semiconductor light emitted light and seal each of the above-mentioned elements in a b+ fixed manner; element and semiconductor photodetector are 4
A photo interrogator comprising: a connecting part that connects the light-emitting element part and the light-receiving element part with an interval set in a part serving as an optical path between the two facing pixel elements; a light-emitting element portion, in which convex lenses are provided on each surface on the optical axis, and the connecting portions are arranged side by side with an interval wider than the diameter of the upper convex lens, and are integrally formed and sealed; A photointerrupter characterized in that a light-receiving element portion and a connecting portion are housed in a light-opaque outer case that does not obstruct an optical path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57198603A JPS5988876A (en) | 1982-11-12 | 1982-11-12 | Photo interrupter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57198603A JPS5988876A (en) | 1982-11-12 | 1982-11-12 | Photo interrupter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5988876A true JPS5988876A (en) | 1984-05-22 |
Family
ID=16393936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57198603A Pending JPS5988876A (en) | 1982-11-12 | 1982-11-12 | Photo interrupter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988876A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172162U (en) * | 1986-04-22 | 1987-10-31 | ||
| US4933729A (en) * | 1985-11-21 | 1990-06-12 | Nec Corporation | Photointerrupter |
-
1982
- 1982-11-12 JP JP57198603A patent/JPS5988876A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4933729A (en) * | 1985-11-21 | 1990-06-12 | Nec Corporation | Photointerrupter |
| JPS62172162U (en) * | 1986-04-22 | 1987-10-31 | ||
| JPH0519969Y2 (en) * | 1986-04-22 | 1993-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4933729A (en) | Photointerrupter | |
| JPS61228681A (en) | Light coupling semiconductor device | |
| JPS5988876A (en) | Photo interrupter | |
| JPS59154083A (en) | Reflection type photosensor | |
| JP2002072021A (en) | Light receiving device for pof communication | |
| JPH0799339A (en) | Optically coupled device | |
| JPH1084122A (en) | Light receiving device | |
| JPS5998564A (en) | Photosensor and manufacture thereof | |
| JPH05190891A (en) | Lead frame and manufacture of optical device using same | |
| JPH02101776A (en) | Package for photo sensor and its manufacture | |
| JP2958228B2 (en) | Transmission type optical coupling device | |
| JPS5896783A (en) | Light-emitting diode | |
| JPS60170982A (en) | Photosemiconductor device | |
| JPH07111342A (en) | Light transmission module | |
| JPH0434985A (en) | Optically coupled device | |
| JPH1167976A (en) | Photosensor and manufacture thereof | |
| JPH09312413A (en) | Photo interrupter and manufacture thereof | |
| JP2513428B2 (en) | Photo coupler | |
| JPS6381987A (en) | Light-coupled semiconductor device | |
| JPH0240970A (en) | Manufacture of photo interruptor | |
| JPH1154790A (en) | Optically coupled device and manufacture thereof | |
| JPH0572155U (en) | Reflective photo interrupter | |
| JPH0747879Y2 (en) | Optical coupling device | |
| JPS63308392A (en) | Optically-coupled semiconductor device | |
| JPH0614562B2 (en) | Optical coupling device |