JPS5982646A - Optomagnetic storage device - Google Patents

Optomagnetic storage device

Info

Publication number
JPS5982646A
JPS5982646A JP57191281A JP19128182A JPS5982646A JP S5982646 A JPS5982646 A JP S5982646A JP 57191281 A JP57191281 A JP 57191281A JP 19128182 A JP19128182 A JP 19128182A JP S5982646 A JPS5982646 A JP S5982646A
Authority
JP
Japan
Prior art keywords
information
signal
address signal
magneto
track address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57191281A
Other languages
Japanese (ja)
Other versions
JPH0581977B2 (en
Inventor
Toshihisa Deguchi
出口 敏久
Tetsuya Inui
哲也 乾
Yoshikazu Fujii
義和 藤居
Hideyoshi Yamaoka
山岡 秀嘉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57191281A priority Critical patent/JPS5982646A/en
Publication of JPS5982646A publication Critical patent/JPS5982646A/en
Publication of JPH0581977B2 publication Critical patent/JPH0581977B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing

Landscapes

  • Optical Recording Or Reproduction (AREA)
  • Optical Head (AREA)

Abstract

PURPOSE:To prevent storage capacity from reduction due to the arrangement of a track address signal recording part by arranging two kinds of photo-detectors supplying magnetized information signals in reverse phase each other to a magneto optic head reading out recording information from a recording medium. CONSTITUTION:The magnetized information signals obtained from the photo- detectors 26, 27 for detecting memory information signals which are arranged on the reflection sides of respective polarized beam splitters 21, 22 have reverse phases each other. When an optical beam spot scans the track address signal recording part 3, the quantity of reflected light is changed in accordance with the existence of an already set-up pit. Since the changing signal is changed independently of the change of a degree of polarization the memory information signal detecting photodetectors 26, 27 detect signal change in the same phase each other. Therefore, a track address signal can be obtained by subtracting the detected signals of the memory information signal detecting photodetectors 26, 27 each other and adding the magnetized information signals without the influence of the track address signal.

Description

【発明の詳細な説明】 く技術分野〉 本発明は磁性薄膜を記憶媒体とし、レーザ光等の光ビー
ムを記憶媒体に照射することによシ情報の記録、再生、
消去を行なう光磁気記憶装置に関する。
[Detailed Description of the Invention] Technical Field> The present invention uses a magnetic thin film as a storage medium, and records, reproduces, and records information by irradiating the storage medium with a light beam such as a laser beam.
The present invention relates to a magneto-optical storage device that performs erasing.

〈従来技術〉 近年、光メモリ装置は高密度で大容量のメモリ装置とし
て注目されている。この光メモリが高密度及び大容量と
なる理由は、情報の記録単位であるビットが、光のビー
ム径だけで決まるだめ1μm程度の太き声にすることが
可能なためである。しかしこの事は光メモリ装置に多く
の制限を加える事になる。即ちある定まった場所に情報
を記録したり、あるいはある定まった場所に記録された
情報を再生したりするためには光ビームを極めて正確に
位置決めしなければならない。一般に再生専用メモリで
は記録したビットに予め番地情報を入れておく事ができ
るので記録情報を再生しながら光ビームの位置決めをす
ることができるが、追加記録メモリあるいは書き換え可
能なメモリでは情報記録時に番地情報迄−緒に記録する
事は困難であるので、メモリ基板に予め何等かのガイド
信号及び番地情報を固定的に入れておくという方法が採
られる。例えば第1図に従来のメモリ基板の一部斜視図
を示すが同図に示す如く基板に凹凸の溝を形成しておき
この溝に沿って情報を記録あるいは再生する方法が一般
的である。上記凹凸の溝は円周方向の一部に断続した形
状を有しこれが溝の番地を示す固定ビット情報を与える
のである。第2図は上記メモリ基板の一部平面図である
。1はガラス材料、あるいはPMMA等の透明高分子材
料からなるディスク基板、2は該ディスク基板1上に刻
設された(深さはm−、但しn、ディスクn 基板の屈折率、λ:レーザ光の波長9光ビーム案内用ト
ラツク、3は〜と記ディスク基板上に断続的に刻設され
た(深さは上記光ビーム案内用トランクと同じ)トラッ
ク番地信号記録部である。元ビームスポットは上記光ビ
ーム案内用トラック2内を円周方向に相対的に移動する
。そして光ビームスポットが光ビーム案内用トラック2
がら外れかけた時は光ビームの反射光量変化現象が生じ
該現象を検出することによってサーボ処理にょ9光ビー
ムスポツトを正規の位置に案内するものである。
<Prior Art> In recent years, optical memory devices have attracted attention as high-density, large-capacity memory devices. The reason why this optical memory has a high density and a large capacity is that the bit, which is the unit of information recording, is determined only by the beam diameter of the light and can be made into a thick sound of about 1 μm. However, this imposes many limitations on the optical memory device. That is, in order to record information at a certain location or to reproduce information recorded at a certain location, the light beam must be positioned extremely accurately. In general, in read-only memory, address information can be stored in the recorded bits in advance, so the position of the light beam can be determined while reproducing the recorded information, but with additional recording memory or rewritable memory, address information can be stored in the recorded bits in advance. Since it is difficult to record the information at the same time, a method is adopted in which some guide signals and address information are fixedly stored in the memory board in advance. For example, FIG. 1 shows a partial perspective view of a conventional memory substrate. As shown in FIG. 1, a common method is to form uneven grooves on the substrate and record or reproduce information along these grooves. The uneven groove has a shape that is interrupted in a part of the circumferential direction, and this provides fixed bit information indicating the address of the groove. FIG. 2 is a partial plan view of the memory board. 1 is a disk substrate made of a glass material or a transparent polymer material such as PMMA, and 2 is engraved on the disk substrate 1 (depth is m-, where n is the refractive index of the disk n substrate, λ is the laser Wavelength of light 9 Optical beam guiding track, 3 is a track address signal recording part (the depth is the same as the above optical beam guiding trunk) intermittently carved on the disk substrate with ~.Original beam spot moves relatively in the circumferential direction within the light beam guiding track 2.Then, the light beam spot moves within the light beam guiding track 2.
When the light beam is about to come off, a phenomenon occurs in which the amount of reflected light of the light beam changes, and by detecting this phenomenon, the servo processing guides the light beam spot to the correct position.

同様に光ビームスポットがトラック番地信号記録部3を
トレースする時はその刻設ピット列に応じた反射光量変
化を読み取ることによって番地情報を得るものである。
Similarly, when the light beam spot traces the track address signal recording section 3, address information is obtained by reading changes in the amount of reflected light corresponding to the engraved pit rows.

このトラック番地信号は上記光メモリ装置をファイリン
グシステムの記憶装置として使う場合、情報検索の為匠
必要である。しかし上記トラック番地信号記録部3があ
る為にその分たけ通常の情報記録部分の使用可能面積が
減少し記憶容量が低下する。
This track address signal is necessary for information retrieval when the optical memory device is used as a storage device for a filing system. However, since the track address signal recording section 3 is provided, the usable area of the normal information recording section is reduced and the storage capacity is reduced.

く目的〉 本発明は上述したトラック番地信号記録部の配置による
記憶容量の低下を防止する為になされたものであシ、記
憶媒体側に特別な処置を施すこと  ゛なく比較的容易
な信号処理手法を採用することによってトラック番地信
号記録部においても通常の情、報記録を可、能ならしめ
た新規・有用な光磁気記憶装置を提供することを目的と
するものである。
Purpose of the present invention The present invention was made in order to prevent a decrease in storage capacity due to the arrangement of the track address signal recording section described above, and allows relatively easy signal processing without requiring any special treatment on the storage medium side. It is an object of the present invention to provide a new and useful magneto-optical storage device that makes it possible to record ordinary information even in a track address signal recording section by adopting this method.

〈実施例〉 以下、本発明に係る光磁気記憶装置の一実施例について
図面を用いて詳細に説明する。
<Embodiment> Hereinafter, an embodiment of a magneto-optical storage device according to the present invention will be described in detail with reference to the drawings.

第3図は本発明に係る光磁気記憶素子の一例の一部側面
断面図である。同図の光磁気記憶素子は第2図の透明基
板3上に記録媒体を形成したものである。1はディスク
基板、4は透明なSiO膜、5は記録媒体となるスパッ
タリングによって形成されたGdDyFe、TbFe、
GdDyFe、GdTbDyFe等のアモルファス垂直
磁化膜、6は透明な5i02膜、7はCu反射膜である
。又、8は接着層、9は透明基板である。以上の第3図
に記載された光磁気記憶素子は記録媒体であるアモルフ
ァス垂直磁化膜5の一部にレーザ光を照射してキュリ一
点温度付近迄温度上昇せしめその部分の磁化の向きを外
部磁界を印加して反転させる(熱磁気記録)方式で記録
を行ない、又記録情報を読み出す時は上記アモルファス
垂直磁化膜5にコヒーレントな光を照射し、その光のカ
ー効果による偏波面の回転を検光子(偏光ビームスプリ
ッタ)などを通すことによって上記アモルファス垂直磁
化膜5の磁化状態の変化を光の強弱として検出し記録情
報を読み出すものである。上記SiO膜4及びS i0
2膜6及びCu反射膜7は上記アモルファス垂直磁化膜
5によるカー回転角を増加させる為に設けられたもので
ある。
FIG. 3 is a partial side sectional view of an example of a magneto-optical memory element according to the present invention. The magneto-optical storage element shown in the figure has a recording medium formed on the transparent substrate 3 shown in FIG. 1 is a disk substrate, 4 is a transparent SiO film, and 5 is GdDyFe, TbFe formed by sputtering, which becomes a recording medium.
An amorphous perpendicular magnetization film such as GdDyFe or GdTbDyFe, 6 a transparent 5i02 film, and 7 a Cu reflective film. Further, 8 is an adhesive layer, and 9 is a transparent substrate. The magneto-optical storage element shown in FIG. 3 above irradiates a portion of the amorphous perpendicularly magnetized film 5, which is a recording medium, with a laser beam to raise the temperature to around the Curie point temperature, and then changes the direction of magnetization of that portion using an external magnetic field. Recording is performed using a method of applying and reversing (thermomagnetic recording), and when reading recorded information, the amorphous perpendicularly magnetized film 5 is irradiated with coherent light, and the rotation of the plane of polarization due to the Kerr effect of the light is detected. By passing photons (polarizing beam splitter) or the like, changes in the magnetization state of the amorphous perpendicularly magnetized film 5 are detected as the intensity of light, and recorded information is read out. The SiO film 4 and SiO
The two films 6 and the Cu reflective film 7 are provided to increase the Kerr rotation angle by the amorphous perpendicularly magnetized film 5.

第4図は第3図の光磁気記憶素子に対してレーザ光を照
射し、情報の記録・再生・消去を行なう♀ 本発明に係る磁気光学ヘッド−例の構成説明図である。
FIG. 4 is an explanatory diagram of the configuration of an example of the magneto-optic head according to the present invention, which records, reproduces, and erases information by irradiating the magneto-optical storage element of FIG. 3 with a laser beam.

lOは所定の強度のレーザ光を射出できるレーザ装置、
’ + 1は射出レーザ光を平行光に変換するコリメー
トレンズ、12は所定の方位の偏光のみを透過する偏光
子、13は光磁気記憶素子14からの反射情報光を検出
系側に導くとともに、光磁気記憶素子14の磁化状態の
変化に応じて生ずる磁気光学回転角を増大させる機能を
有するハーフプリズム、15けアモルファス垂直磁化膜
5上に微小スポットを結像させる対物レンズ、16は反
射情報光を2分するハーフプリズムである。該ハーフプ
リズム16はS波1P波夫々の反射率及び透過率が1:
1に近く且つS波、P波間の位相ずれが小さいという光
学特性を有する。17.18は反射情報光の偏光方位を
所定の方向に回転でき述する各光検出器上に所定の大き
さ及び形状で光ビームを投射するだめのスポットレンズ
、21.22はS波、P波を分離する偏光ビームスプリ
ッタ、23はシリンドリカルレンズ、24は上記対物レ
ンズ15と光磁気記憶素子14との間の相対距離の変化
をスポットレンズ20とシリンドリカルレンズ23との
相乗作用によって検出する複合素子型光検出器である。
lO is a laser device that can emit laser light with a predetermined intensity;
' + 1 is a collimating lens that converts the emitted laser beam into parallel light; 12 is a polarizer that transmits only polarized light in a predetermined direction; 13 is a polarizer that guides the reflected information light from the magneto-optical storage element 14 to the detection system side; A half prism having a function of increasing the magneto-optical rotation angle generated in response to a change in the magnetization state of the magneto-optical storage element 14, an objective lens that forms a minute spot on the 15-piece amorphous perpendicularly magnetized film 5, and 16 a reflected information beam. It is a half prism that divides the The half prism 16 has a reflectance and a transmittance of 1 for S waves and 1P waves.
It has optical characteristics such that the phase difference is close to 1 and the phase shift between the S wave and the P wave is small. 17.18 is a spot lens for rotating the polarization direction of the reflected information light in a predetermined direction and projecting a light beam in a predetermined size and shape onto each photodetector; 21.22 is an S wave, P A polarizing beam splitter that separates waves; 23 is a cylindrical lens; 24 is a composite element that detects changes in the relative distance between the objective lens 15 and the magneto-optical storage element 14 through a synergistic effect of the spot lens 20 and the cylindrical lens 23; It is a type photodetector.

また25は光磁気記憶素子14に刻設された光ビーム案
内用トラック2と光スポットとの相対的な位置ずれを検
出する複合素子型光検出器である。上記複合素子型光検
出器24゜25によって得た相対誤差信号は図示しない
駆動機構にフィードバンク入力されその駆動機構により
対物レンズ15あるいは光学ヘッド全体が駆動される。
Further, 25 is a composite element type photodetector that detects a relative positional shift between the optical beam guide track 2 carved on the magneto-optical storage element 14 and the optical spot. The relative error signals obtained by the composite element type photodetectors 24 and 25 are fed into a drive mechanism (not shown) as a feed bank, and the drive mechanism drives the objective lens 15 or the entire optical head.

この対物レンズI5あるいは光学ヘッド全体の駆動によ
って光ビームスポットは上記光ビーム案内用トランク2
上を所定の大きさで走査される。25.27はメモリ情
報信号検出用光検出器である。
By driving this objective lens I5 or the entire optical head, the light beam spot is shifted to the light beam guiding trunk 2.
The top is scanned with a predetermined size. 25 and 27 are photodetectors for detecting memory information signals.

次に光磁気記憶素子14にて反射された光がノ・−ツブ
リズム13を通過した後、メモリ情報信号検出用光検出
器26.27に至るまでの光ビームの偏光状態変化を第
5図のベクトル図を用いて説明する。同図において矢印
の方向は偏向方位を表わし矢印の長さが光強度を表わす
。又、光磁気記憶素子14に入射するレーザ光の偏光状
態はPの方向とする。同図(a)は・・−ツブリズム1
6を透過した光の偏光状態を示し同図(b)はノ・−ツ
ブリズム16にて反射した光の偏光状態を示す。同図に
おいてy + 、 M−は光磁気記憶素子14における
磁化情報に対応した反射情報光の偏光状態を示す。
Next, the change in the polarization state of the light beam after the light reflected by the magneto-optical storage element 14 passes through the no-tube beam 13 and reaches the memory information signal detection photodetectors 26 and 27 is shown in FIG. This will be explained using a vector diagram. In the figure, the direction of the arrow represents the deflection direction, and the length of the arrow represents the light intensity. Further, the polarization state of the laser beam incident on the magneto-optical memory element 14 is in the P direction. Figure (a) is...-Tubulism 1
The polarization state of the light transmitted through the node 6 is shown in FIG. 6, and FIG. In the figure, y + and M- indicate the polarization state of the reflected information light corresponding to the magnetization information in the magneto-optical memory element 14 .

但し・・−ツブリズムI6においては反射の際にP波と
S波との相対的な位相ずれが約180°存在するので透
過側(a)と反射側(b)とでは反射情報光M %p−
の方位が互いに異なるものとなっている。
However, in Tubulism I6, there is a relative phase shift of about 180° between the P wave and the S wave during reflection, so the reflected information light M %p on the transmission side (a) and the reflection side (b) −
The directions are different from each other.

行に切断され、所定の厚さに拝上げられた水晶板あるい
は雲母板であり、互いに直交する偏波面をもつ偏光の位
相を相対的に180°ずらずことができる。従って、入
射偏光の方位だけを変化させることが可能である。
It is a quartz or mica plate cut into rows and raised to a predetermined thickness, and can relatively shift the phase of polarized light having mutually orthogonal polarization planes by 180°. Therefore, it is possible to change only the orientation of the incident polarized light.

18の位相の遅れる軸の方位をそれぞれ第5図の通過し
てくる偏光は同図の(aL(b)のM +A 、 M−
Al1.18の遅延軸の方位A、Bは光磁気記憶素子1
4への入射偏光の方位に対して一百〜百の間に設定され
る。
The polarized light passing through the azimuths of the 18 phase-lag axes in FIG.
The orientations A and B of the delay axis of Al1.18 are magneto-optical memory element 1
4 is set between 100 and 100 for the orientation of the incident polarized light.

以」二の設定によシ互いに直交する偏波面をもつ光を2
分する偏光ビームスプリッタ2]、22のそれぞれの偏
光軸を同図のs、pとすると該偏光ビームスプリッタ2
1.22′f:経た光は、光磁気記憶素子14の磁化状
態に応じて強度変調されたもの(xl、x2又はY11
Y2)となる。
With the following settings, two lights with mutually orthogonal polarization planes are
If the respective polarization axes of the polarizing beam splitter 2 and 22 are s and p in the figure, the polarizing beam splitter 2
1.22'f: The transmitted light is intensity-modulated according to the magnetization state of the magneto-optical memory element 14 (xl, x2 or Y11
Y2).

以上の様に偏光ビームスプリッタ21.22のそれぞれ
の反射側に設置されたメモリ情報信号検出用光検出器2
.6.27により得られる磁化情報信号は互いに逆位相
の信号が得られる。
As described above, the photodetectors 2 for detecting memory information signals are installed on the reflective side of each of the polarizing beam splitters 21 and 22.
.. The magnetization information signals obtained by 6.27 have mutually opposite phases.

一方、トラック番地信号記録部3を光ビームスポットが
走査する場合には刻設ピットのある個所とない個所とで
は反射光量が変化する。この変化信号は偏光度の変化と
関係なく変化するものであるから、メモリ情報信号検出
用光検出器26.27においては互いに同位相の信号変
化として得られる。
On the other hand, when the light beam spot scans the track address signal recording section 3, the amount of reflected light changes between locations where there are engraved pits and locations where there are no engraved pits. Since this change signal changes regardless of the change in the degree of polarization, the memory information signal detection photodetectors 26 and 27 obtain signal changes in the same phase.

以−ヒの結果から理解される如くメモリ情報信号検出用
検出器26.27の検知信号を互いに減算することによ
ってトラック番地信号の影響を受けないで磁化情報信号
を得ることができ、上記検知信号を互いに加算すること
によって磁化情報信号の影響を受けないでトラック番地
信号を得ることができるものである。第6図はトラック
番地信号記録部3の上に磁化情報信号を重複して記録し
た場合におけるメモリ情報信号検出用検出器26゜27
において得られる出力信号を模式的に示した説明図であ
る。同図で28はレーザ光スポット、29はトラック番
地信号ピット、30け磁化情報信号ビットである。又、
Xはメモリ情報信号検出用検出器26にて検出される信
号波形、Yはメモリ情報信号検出用検出器27にて検出
される信号波形である。同図に示され−る如<、 x 
十yはトラック番地信号に対応した信号波形になってお
り、X−Yは磁化情報信号に対応した信号波形になって
いる。
As can be understood from the results below, by subtracting the detection signals of the memory information signal detection detectors 26 and 27 from each other, the magnetization information signal can be obtained without being influenced by the track address signal, and the above detection signal By adding the above to each other, it is possible to obtain a track address signal without being affected by the magnetization information signal. FIG. 6 shows a detector 26 and 27 for detecting memory information signals when magnetization information signals are recorded redundantly on the track address signal recording section 3.
FIG. 2 is an explanatory diagram schematically showing an output signal obtained in FIG. In the figure, 28 is a laser beam spot, 29 is a track address signal pit, and 30 magnetization information signal bits. or,
X is a signal waveform detected by the memory information signal detection detector 26, and Y is a signal waveform detected by the memory information signal detection detector 27. As shown in the same figure, x
10y is a signal waveform corresponding to a track address signal, and XY is a signal waveform corresponding to a magnetization information signal.

本発明に係る光磁気記憶装置は以上の実施形態以外に種
々の構成を取シ得るものである。例えば光磁気記憶素子
I4内の光ビーム案内用トラックあるいはトラック番地
信号記録部に関する構成は凹凸の溝状のもの以外に反射
率の変化を利用する構成あるいは両者を混合した変化を
利用する構成であってもよい。
The magneto-optical storage device according to the present invention can have various configurations in addition to the above-described embodiments. For example, the structure of the optical beam guiding track or the track address signal recording section in the magneto-optical memory element I4 may be a structure that uses a change in reflectance, or a combination of both, in addition to the uneven groove shape. It's okay.

く効果〉 以上説明した本発明に、よれば比較的容易な信号処理方
法によってトラック番地信号記録部においても通常の情
報記録ができるので、記憶容量の有効個所の減少を防ぎ
光メモリ装置の大容量化に大きく貢献し得るものである
Effects> According to the present invention described above, normal information can be recorded even in the track address signal recording section using a relatively easy signal processing method, thereby preventing a reduction in the effective storage capacity and increasing the capacity of the optical memory device. This can greatly contribute to

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のメモリ基板の一部斜視図、第2図は上記
メモリ基板の一部平面図、第3図は本発明に係る光磁気
記憶素子の一例の一部側面断面図、第4図は本発明に係
る磁気光学ヘッドの一例の構成説明図、第5図は光ビー
ムの偏光状態変化を示すベクトル図、第6図はメモリ情
報信号検出用検出器にて得られる出力信号の説明図であ
る。 図中、■:ディスク基板 2:光ビーム案内用トランク
 3ニドラック番地信号記録部 4:SjO膜 5:ア
モルファス垂直磁化膜 6:5j02膜 7:Cu反射
膜 8:接着層 9:透明基板 10:レーザ装置 1
1:コリメートレンズ 12:偏光子 13:ハーフプ
リズム 14:光磁気記憶素子 15:対物レンズ 1
6:ノ・ツタ 23ニジリントリカルレンズ 24:複
合素子型光検出器 25:複合素子型光検出器26.2
7 :メモリ情報信号検出用光検出器代理人 弁理士 
福 士 愛 彦(他2名)第2図 第3図
FIG. 1 is a partial perspective view of a conventional memory board, FIG. 2 is a partial plan view of the memory board, FIG. 3 is a partial side sectional view of an example of a magneto-optical memory element according to the present invention, and FIG. FIG. 5 is a vector diagram showing changes in the polarization state of a light beam, and FIG. 6 is an explanation of an output signal obtained by a detector for detecting a memory information signal. It is a diagram. In the figure, ■: Disk substrate 2: Optical beam guiding trunk 3 Nidorak address signal recording section 4: SjO film 5: Amorphous perpendicular magnetization film 6: 5j02 film 7: Cu reflective film 8: Adhesive layer 9: Transparent substrate 10: Laser Equipment 1
1: Collimating lens 12: Polarizer 13: Half prism 14: Magneto-optical memory element 15: Objective lens 1
6: No Tsuta 23 Nijilintorical lens 24: Complex element type photodetector 25: Complex element type photodetector 26.2
7: Photodetector for detecting memory information signals Patent attorney
Aihiko Fukushi (and 2 others) Figure 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 1 磁性膜を記憶媒体とし、レーザ光等の光ビームを前
記記憶媒体に照射することにょ9情報の記録、再生、消
去を行う光磁気記憶装置において、前記記憶媒体を有す
る光磁気記憶素子の基板に凹凸等を形成することによっ
て情報信号用トラックと該情報信号用トラックに沿うガ
イドトラックとを形成し、前記情報信号用トラックの延
長上に所定の形状の凹凸等を形成することによって番地
信号を固定的に記憶した番地信号記録部分を形成し、前
記記憶媒体の記録情報を読み取る磁気光学ヘッドに互い
に逆位相の磁化情報信号を得る2種の光検出器を配置し
、前記2種の光検出器の検出信号の減算によって’Rq
itt情報信号を、前記2種の光検出器の検出信号の加
算によって前記番地信号を夫々得る信号処理手段を備え
たことを特徴とする光磁気記憶装置。
1. In a magneto-optical storage device that uses a magnetic film as a storage medium and records, reproduces, and erases information by irradiating the storage medium with a light beam such as a laser beam, a substrate of a magneto-optical storage element having the storage medium. By forming unevenness etc. on the information signal track and a guide track along the information signal track, and by forming unevenness etc. of a predetermined shape on the extension of the information signal track, an address signal is generated. A magneto-optical head that forms a fixedly stored address signal recording portion and reads recorded information of the storage medium is provided with two types of photodetectors that obtain magnetization information signals of mutually opposite phases, and the two types of photodetectors By subtracting the detection signal of the detector, 'Rq
A magneto-optical storage device comprising signal processing means for obtaining the address signal by adding the detection signals of the two types of photodetectors from the itt information signal.
JP57191281A 1982-10-29 1982-10-29 Optomagnetic storage device Granted JPS5982646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57191281A JPS5982646A (en) 1982-10-29 1982-10-29 Optomagnetic storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57191281A JPS5982646A (en) 1982-10-29 1982-10-29 Optomagnetic storage device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2401011A Division JPH04102248A (en) 1990-12-10 1990-12-10 Magneto-optical storage device

Publications (2)

Publication Number Publication Date
JPS5982646A true JPS5982646A (en) 1984-05-12
JPH0581977B2 JPH0581977B2 (en) 1993-11-17

Family

ID=16271944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57191281A Granted JPS5982646A (en) 1982-10-29 1982-10-29 Optomagnetic storage device

Country Status (1)

Country Link
JP (1) JPS5982646A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60129954A (en) * 1983-12-19 1985-07-11 Matsushita Electric Ind Co Ltd Photomagnetic disk recorder
JPS6113457A (en) * 1984-06-29 1986-01-21 Hitachi Ltd Information recording and reproducing device
JPS6185653A (en) * 1984-10-02 1986-05-01 Sharp Corp Optical memory element
JPS6192460A (en) * 1984-10-12 1986-05-10 Toshiba Corp Optical information recording device
JPS6260147A (en) * 1985-09-11 1987-03-16 Matsushita Electric Ind Co Ltd Photomagnetic disk
JPS6379255A (en) * 1986-06-10 1988-04-09 Nec Home Electronics Ltd Magneto-optical recording and reproducing device
JPS63102031U (en) * 1986-12-22 1988-07-02
JPH0329138A (en) * 1990-04-13 1991-02-07 Sanyo Electric Co Ltd Information reader
JPH04102248A (en) * 1990-12-10 1992-04-03 Sharp Corp Magneto-optical storage device
JPH06282889A (en) * 1994-01-31 1994-10-07 Sharp Corp Magneto-optical memory cell
WO2003077250A1 (en) * 2002-03-08 2003-09-18 Sony Corporation Record medium and its reproducer, reproducing method, record medium manufacturing apparatus, record medium manufacturing method, and recorder

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788540A (en) * 1980-11-21 1982-06-02 Olympus Optical Co Ltd Method and apparatus for information read-in of optical magnetic recording medium
JPS57117106A (en) * 1981-01-09 1982-07-21 Olympus Optical Co Ltd Optical magnetic recording and reproducing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788540A (en) * 1980-11-21 1982-06-02 Olympus Optical Co Ltd Method and apparatus for information read-in of optical magnetic recording medium
JPS57117106A (en) * 1981-01-09 1982-07-21 Olympus Optical Co Ltd Optical magnetic recording and reproducing method

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60129954A (en) * 1983-12-19 1985-07-11 Matsushita Electric Ind Co Ltd Photomagnetic disk recorder
JPH0522305B2 (en) * 1983-12-19 1993-03-29 Matsushita Electric Ind Co Ltd
JPS6113457A (en) * 1984-06-29 1986-01-21 Hitachi Ltd Information recording and reproducing device
JPH0518186B2 (en) * 1984-10-02 1993-03-11 Sharp Kk
JPS6185653A (en) * 1984-10-02 1986-05-01 Sharp Corp Optical memory element
JPS6192460A (en) * 1984-10-12 1986-05-10 Toshiba Corp Optical information recording device
JPS6260147A (en) * 1985-09-11 1987-03-16 Matsushita Electric Ind Co Ltd Photomagnetic disk
JPS6379255A (en) * 1986-06-10 1988-04-09 Nec Home Electronics Ltd Magneto-optical recording and reproducing device
JPS63102031U (en) * 1986-12-22 1988-07-02
JPH05777B2 (en) * 1990-04-13 1993-01-06 Sanyo Electric Co
JPH0329138A (en) * 1990-04-13 1991-02-07 Sanyo Electric Co Ltd Information reader
JPH04102248A (en) * 1990-12-10 1992-04-03 Sharp Corp Magneto-optical storage device
JPH06282889A (en) * 1994-01-31 1994-10-07 Sharp Corp Magneto-optical memory cell
WO2003077250A1 (en) * 2002-03-08 2003-09-18 Sony Corporation Record medium and its reproducer, reproducing method, record medium manufacturing apparatus, record medium manufacturing method, and recorder
US7689105B2 (en) 2002-03-08 2010-03-30 Sony Corporation Record medium and its reproducer, reproducing method, record medium manufacturing apparatus, record medium manufacturing method, and recorder

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